WO2008093808A1 - ヒートスプレッダモジュール、その製法及びヒートシンク - Google Patents

ヒートスプレッダモジュール、その製法及びヒートシンク Download PDF

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Publication number
WO2008093808A1
WO2008093808A1 PCT/JP2008/051583 JP2008051583W WO2008093808A1 WO 2008093808 A1 WO2008093808 A1 WO 2008093808A1 JP 2008051583 W JP2008051583 W JP 2008051583W WO 2008093808 A1 WO2008093808 A1 WO 2008093808A1
Authority
WO
WIPO (PCT)
Prior art keywords
spreader module
heat spreader
heat
manufacturing
boards
Prior art date
Application number
PCT/JP2008/051583
Other languages
English (en)
French (fr)
Inventor
Yoshihiro Tanaka
Takahiro Ishikawa
Yumihiko Kuno
Shuhei Ishikawa
Original Assignee
Ngk Insulators, Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ngk Insulators, Ltd. filed Critical Ngk Insulators, Ltd.
Publication of WO2008093808A1 publication Critical patent/WO2008093808A1/ja

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress

Abstract

　ヒートスプレッダモジュール１０は、絶縁基板１２の両面に第１及び第２の中間板１４，２０がそれぞれ配置されている。各中間板１４，２０は、ヤング率が絶縁基板１２より小さい応力緩和板１６，２２の全面が金属膜１８，２４で覆われたものである。このため、半導体装置３６が発熱したときには、各中間板１４，２０は絶縁基板１２よりもヤング率が小さいため、発生した応力が各中間板１４，２０により緩和される。
PCT/JP2008/051583 2007-01-31 2008-01-31 ヒートスプレッダモジュール、その製法及びヒートシンク WO2008093808A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-021471 2007-01-31
JP2007021471 2007-01-31

Publications (1)

Publication Number Publication Date
WO2008093808A1 true WO2008093808A1 (ja) 2008-08-07

Family

ID=39674113

Family Applications (2)

Application Number Title Priority Date Filing Date
PCT/JP2008/051583 WO2008093808A1 (ja) 2007-01-31 2008-01-31 ヒートスプレッダモジュール、その製法及びヒートシンク
PCT/JP2008/051584 WO2008093809A1 (ja) 2007-01-31 2008-01-31 鋳造品の製造方法及び鋳造品

Family Applications After (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/051584 WO2008093809A1 (ja) 2007-01-31 2008-01-31 鋳造品の製造方法及び鋳造品

Country Status (1)

Country Link
WO (2) WO2008093808A1 (ja)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011176299A (ja) * 2010-01-27 2011-09-08 Kyocera Corp 回路基板およびこれを用いた電子装置
JP2013138267A (ja) * 2013-04-08 2013-07-11 Mitsubishi Materials Corp ヒートシンク付パワーモジュール用基板、ヒートシンク付パワーモジュール及び緩衝層付パワーモジュール用基板
DE102012104593A1 (de) * 2012-05-29 2013-12-05 Sma Solar Technology Ag Halbleiterbauelement
DE202013103599U1 (de) * 2013-08-09 2014-11-13 Trafomodern Transformatorengesellschaft M.B.H. Elektrisches Bauteil
JP2016149431A (ja) * 2015-02-12 2016-08-18 株式会社豊田中央研究所 半導体モジュール
JP2019096858A (ja) * 2017-11-20 2019-06-20 富士通化成株式会社 複合伝熱部材、及び複合伝熱部材の製造方法
CN111356544A (zh) * 2017-11-20 2020-06-30 三菱综合材料株式会社 复合传热部件及复合传热部件的制造方法
EP3660895A4 (en) * 2017-07-27 2020-08-19 BYD Company Limited HEAT DISSIPATION ELEMENT AND ITS PREPARATION PROCESS, AND IGBT MODULE
EP3968369A1 (en) 2020-09-15 2022-03-16 Dowa Metaltech Co., Ltd Heat radiation member and method for producing same

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7157609B2 (ja) * 2018-09-27 2022-10-20 Ｄｏｗａメタルテック株式会社 金属－セラミックス接合基板およびその製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003078086A (ja) * 2001-09-04 2003-03-14 Kubota Corp 半導体素子モジュール基板の積層構造
JP2005145746A (ja) * 2003-11-14 2005-06-09 Denki Kagaku Kogyo Kk セラミックス回路基板一体型アルミニウム−炭化珪素質複合体及びその製造方法
JP2005252159A (ja) * 2004-03-08 2005-09-15 Ngk Insulators Ltd 接合体の形状制御方法、接合体の製造方法、接合体、ヒートスプレッダモジュールの製造方法及びヒートスプレッダモジュール
JP2006351834A (ja) * 2005-06-16 2006-12-28 Hitachi Metals Ltd セラミックス回路基板およびそれを用いた半導体モジュール

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63180357A (ja) * 1987-01-21 1988-07-25 Nabeya:Kk 流体透過性鋳造品の製造方法
JP3286102B2 (ja) * 1995-02-10 2002-05-27 日本碍子株式会社 複合鋳造体及びその製造方法
JP2000265253A (ja) * 1999-03-16 2000-09-26 Mitsubishi Materials Corp 金属基複合材およびその製造方法
JP2000336438A (ja) * 1999-03-25 2000-12-05 Kubota Corp 金属−セラミックス複合材料およびその製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003078086A (ja) * 2001-09-04 2003-03-14 Kubota Corp 半導体素子モジュール基板の積層構造
JP2005145746A (ja) * 2003-11-14 2005-06-09 Denki Kagaku Kogyo Kk セラミックス回路基板一体型アルミニウム−炭化珪素質複合体及びその製造方法
JP2005252159A (ja) * 2004-03-08 2005-09-15 Ngk Insulators Ltd 接合体の形状制御方法、接合体の製造方法、接合体、ヒートスプレッダモジュールの製造方法及びヒートスプレッダモジュール
JP2006351834A (ja) * 2005-06-16 2006-12-28 Hitachi Metals Ltd セラミックス回路基板およびそれを用いた半導体モジュール

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011176299A (ja) * 2010-01-27 2011-09-08 Kyocera Corp 回路基板およびこれを用いた電子装置
DE102012104593A1 (de) * 2012-05-29 2013-12-05 Sma Solar Technology Ag Halbleiterbauelement
DE102012104593B4 (de) * 2012-05-29 2016-02-25 Sma Solar Technology Ag Halbleiterbauelement
JP2013138267A (ja) * 2013-04-08 2013-07-11 Mitsubishi Materials Corp ヒートシンク付パワーモジュール用基板、ヒートシンク付パワーモジュール及び緩衝層付パワーモジュール用基板
DE202013103599U1 (de) * 2013-08-09 2014-11-13 Trafomodern Transformatorengesellschaft M.B.H. Elektrisches Bauteil
JP2016149431A (ja) * 2015-02-12 2016-08-18 株式会社豊田中央研究所 半導体モジュール
EP3660895A4 (en) * 2017-07-27 2020-08-19 BYD Company Limited HEAT DISSIPATION ELEMENT AND ITS PREPARATION PROCESS, AND IGBT MODULE
JP2019096858A (ja) * 2017-11-20 2019-06-20 富士通化成株式会社 複合伝熱部材、及び複合伝熱部材の製造方法
CN111356544A (zh) * 2017-11-20 2020-06-30 三菱综合材料株式会社 复合传热部件及复合传热部件的制造方法
EP3715014A4 (en) * 2017-11-20 2021-07-28 Mitsubishi Materials Corporation COMPOSITE HEAT TRANSFER ELEMENT AND METHOD FOR PRODUCING A COMPOSITE HEAT TRANSFER ELEMENT
JP7119671B2 (ja) 2017-11-20 2022-08-17 三菱マテリアル株式会社 複合伝熱部材、及び複合伝熱部材の製造方法
EP3968369A1 (en) 2020-09-15 2022-03-16 Dowa Metaltech Co., Ltd Heat radiation member and method for producing same
US11919288B2 (en) 2020-09-15 2024-03-05 Dowa Metaltech Co., Ltd. Method for producing heat radiation member

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Publication number Publication date
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