WO2008090988A1 - 光学素子、これを用いた露光装置、及びデバイス製造方法 - Google Patents

光学素子、これを用いた露光装置、及びデバイス製造方法 Download PDF

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Publication number
WO2008090988A1
WO2008090988A1 PCT/JP2008/051119 JP2008051119W WO2008090988A1 WO 2008090988 A1 WO2008090988 A1 WO 2008090988A1 JP 2008051119 W JP2008051119 W JP 2008051119W WO 2008090988 A1 WO2008090988 A1 WO 2008090988A1
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WIPO (PCT)
Prior art keywords
optical element
layer
side layer
exposure light
interface side
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PCT/JP2008/051119
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English (en)
French (fr)
Inventor
Katsuhiko Murakami
Takaharu Komiya
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Nikon Corporation
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Publication date
Application filed by Nikon Corporation filed Critical Nikon Corporation
Priority to JP2008555116A priority Critical patent/JPWO2008090988A1/ja
Priority to EP08703931.9A priority patent/EP2109134B1/en
Publication of WO2008090988A1 publication Critical patent/WO2008090988A1/ja
Priority to US12/509,292 priority patent/US8121254B2/en

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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/02—Catoptric systems, e.g. image erecting and reversing system
    • G02B17/06—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror
    • G02B17/0647—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors
    • G02B17/0657—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors off-axis or unobscured systems in which all of the mirrors share a common axis of rotational symmetry
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/08—Mirrors
    • G02B5/0816—Multilayer mirrors, i.e. having two or more reflecting layers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/08—Mirrors
    • G02B5/0891—Ultraviolet [UV] mirrors
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/26—Reflecting filters
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70308—Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70316—Details of optical elements, e.g. of Bragg reflectors, extreme ultraviolet [EUV] multilayer or bilayer mirrors or diffractive optical elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70575—Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • G21K1/062—Devices having a multilayer structure

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Nanotechnology (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • Microscoopes, Condenser (AREA)
  • Lenses (AREA)

Abstract

【課題】 耐酸化性及び非露光光吸収という２つの性質を両立するように組み込むことによって光学特性を向上させた光学素子を提供すること。 【解決手段】 保護層３０は、その組成を深さ方向に変化させて形成されており、多層膜２０の最表層上である薄膜層Ｌ１上に設けられる界面側層３１と、界面側層３１上に設けられて光学素子１００の最表面とされる表面側層３２と、中間層３３とを有する。界面側層３１は、光源から非露光光を相対的に吸収する性質を有する。また、表面側層３２は、多層膜２０の表面が酸化するのを抑制する。これにより、露光装置内において極端紫外線が照射されても光学素子１００表面の反射率低下の抑制、非露光光の反射の低減が可能となる。
PCT/JP2008/051119 2007-01-25 2008-01-25 光学素子、これを用いた露光装置、及びデバイス製造方法 WO2008090988A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2008555116A JPWO2008090988A1 (ja) 2007-01-25 2008-01-25 光学素子、これを用いた露光装置、及びデバイス製造方法
EP08703931.9A EP2109134B1 (en) 2007-01-25 2008-01-25 Optical element, exposure apparatus employing the optical element, and device manufacturing method
US12/509,292 US8121254B2 (en) 2007-01-25 2009-07-24 Optical element, exposure apparatus using this, and device manufacturing method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007014920 2007-01-25
JP2007-014920 2007-01-25

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US12/509,292 Continuation US8121254B2 (en) 2007-01-25 2009-07-24 Optical element, exposure apparatus using this, and device manufacturing method

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WO2008090988A1 true WO2008090988A1 (ja) 2008-07-31

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US (1) US8121254B2 (ja)
EP (2) EP2109134B1 (ja)
JP (1) JPWO2008090988A1 (ja)
WO (1) WO2008090988A1 (ja)

Cited By (9)

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WO2011071086A1 (ja) * 2009-12-09 2011-06-16 旭硝子株式会社 Ｅｕｖリソグラフィ用光学部材
JP2012033934A (ja) * 2010-07-29 2012-02-16 Corning Inc 高反射性硬化シリカ−チタニア物品およびその製造方法
US20130114059A1 (en) * 2010-07-06 2013-05-09 Asml Netherlands B.V. Components for EUV Lithographic Apparatus, EUV Lithographic Apparatus Including Such Components and Method for Manufacturing Such Components
JP2013538433A (ja) * 2010-03-24 2013-10-10 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置およびスペクトル純度フィルタ
JP2015501527A (ja) * 2011-09-27 2015-01-15 カール・ツァイス・エスエムティー・ゲーエムベーハー Ｅｕｖミラー上に酸化ケイ素から成るキャップ層を生成する方法、ｅｕｖミラー及びｅｕｖリソグラフィ装置
JP2015501528A (ja) * 2011-09-27 2015-01-15 カール・ツァイス・エスエムティー・ゲーエムベーハー 安定した組成を有する酸窒化物キャッピング層を備えたｅｕｖミラー、ｅｕｖリソグラフィ装置、及び作動方法
JP2016183888A (ja) * 2015-03-26 2016-10-20 株式会社リガク 二重湾曲ｘ線集光素子、二重湾曲ｘ線分光素子およびそれを備える装置ならびにその素子の製造方法
JP2021071543A (ja) * 2019-10-29 2021-05-06 ギガフォトン株式会社 極端紫外光集光ミラー、極端紫外光生成装置、及び電子デバイスの製造方法
JP7471156B2 (ja) 2020-06-29 2024-04-19 ギガフォトン株式会社 極端紫外光集光ミラー及び電子デバイスの製造方法

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Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011071086A1 (ja) * 2009-12-09 2011-06-16 旭硝子株式会社 Ｅｕｖリソグラフィ用光学部材
JP5590044B2 (ja) * 2009-12-09 2014-09-17 旭硝子株式会社 Ｅｕｖリソグラフィ用光学部材
US8986910B2 (en) 2009-12-09 2015-03-24 Asahi Glass Company, Limited Optical member for EUV lithography
JP2013538433A (ja) * 2010-03-24 2013-10-10 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置およびスペクトル純度フィルタ
US20130114059A1 (en) * 2010-07-06 2013-05-09 Asml Netherlands B.V. Components for EUV Lithographic Apparatus, EUV Lithographic Apparatus Including Such Components and Method for Manufacturing Such Components
JP2012033934A (ja) * 2010-07-29 2012-02-16 Corning Inc 高反射性硬化シリカ−チタニア物品およびその製造方法
JP2015501528A (ja) * 2011-09-27 2015-01-15 カール・ツァイス・エスエムティー・ゲーエムベーハー 安定した組成を有する酸窒化物キャッピング層を備えたｅｕｖミラー、ｅｕｖリソグラフィ装置、及び作動方法
JP2015501527A (ja) * 2011-09-27 2015-01-15 カール・ツァイス・エスエムティー・ゲーエムベーハー Ｅｕｖミラー上に酸化ケイ素から成るキャップ層を生成する方法、ｅｕｖミラー及びｅｕｖリソグラフィ装置
US9880476B2 (en) 2011-09-27 2018-01-30 Carl Zeiss Smt Gmbh Method for producing a capping layer composed of silicon oxide on an EUV mirror, EUV mirror, and EUV lithography apparatus
JP2016183888A (ja) * 2015-03-26 2016-10-20 株式会社リガク 二重湾曲ｘ線集光素子、二重湾曲ｘ線分光素子およびそれを備える装置ならびにその素子の製造方法
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JP2021071543A (ja) * 2019-10-29 2021-05-06 ギガフォトン株式会社 極端紫外光集光ミラー、極端紫外光生成装置、及び電子デバイスの製造方法
JP7471156B2 (ja) 2020-06-29 2024-04-19 ギガフォトン株式会社 極端紫外光集光ミラー及び電子デバイスの製造方法

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Publication number Publication date
JPWO2008090988A1 (ja) 2010-05-20
EP3159912A1 (en) 2017-04-26
US8121254B2 (en) 2012-02-21
EP2109134B1 (en) 2017-03-01
EP2109134A4 (en) 2012-10-10
EP2109134A1 (en) 2009-10-14
US20100190113A1 (en) 2010-07-29

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