WO2009022506A1 - 照明光学装置、露光装置、およびデバイス製造方法 - Google Patents

照明光学装置、露光装置、およびデバイス製造方法 Download PDF

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Publication number
WO2009022506A1
WO2009022506A1 PCT/JP2008/062260 JP2008062260W WO2009022506A1 WO 2009022506 A1 WO2009022506 A1 WO 2009022506A1 JP 2008062260 W JP2008062260 W JP 2008062260W WO 2009022506 A1 WO2009022506 A1 WO 2009022506A1
Authority
WO
WIPO (PCT)
Prior art keywords
optical apparatus
lighting optical
field stop
lighting
partial field
Prior art date
Application number
PCT/JP2008/062260
Other languages
English (en)
French (fr)
Inventor
Hideki Komatsuda
Original Assignee
Nikon Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corporation filed Critical Nikon Corporation
Priority to JP2009528057A priority Critical patent/JP5387982B2/ja
Priority to EP08777933A priority patent/EP2178107A4/en
Priority to KR1020097026361A priority patent/KR101501303B1/ko
Publication of WO2009022506A1 publication Critical patent/WO2009022506A1/ja
Priority to US12/703,270 priority patent/US8780328B2/en

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70066—Size and form of the illuminated area in the mask plane, e.g. reticle masking blades or blinds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/701—Off-axis setting using an aperture
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

　例えば反射型原板を用いる露光装置に適用したときに、視野絞りによる結像の悪影響の抑制と露光量分布均一性の向上とを両立させることのできる照明光学装置。第１面に配置可能な反射型原板（Ｍ）を介して第１面と光学的に共役な第２面を照明するための照明光学装置。第１面へ入射する光束を制限するために第２面に形成すべき照明領域の第１の外縁を定めるように配置された第１部分視野絞り（２１）と、第１面に配置可能な反射型原板で反射した光束を制限するために照明領域の第２の外縁を定めるように配置された第２部分視野絞り（２２）とを備えている。第１部分視野絞りと第１面との第１間隔（Ｄ１）が第２部分視野絞りと第１面との第２間隔（Ｄ２）よりも大きく設定されている。
PCT/JP2008/062260 2007-08-10 2008-07-07 照明光学装置、露光装置、およびデバイス製造方法 WO2009022506A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2009528057A JP5387982B2 (ja) 2007-08-10 2008-07-07 照明光学装置、露光装置、およびデバイス製造方法
EP08777933A EP2178107A4 (en) 2007-08-10 2008-07-07 OPTICAL LIGHTING DEVICE, PHOTOLITHOGRAPHY DEVICES AND COMPONENT MANUFACTURING METHOD
KR1020097026361A KR101501303B1 (ko) 2007-08-10 2008-07-07 조명 광학 장치, 노광 장치, 및 디바이스 제조 방법
US12/703,270 US8780328B2 (en) 2007-08-10 2010-02-10 Illumination optical apparatus, exposure apparatus, and device manufacturing method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007208749 2007-08-10
JP2007-208749 2007-08-10

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/703,270 Continuation US8780328B2 (en) 2007-08-10 2010-02-10 Illumination optical apparatus, exposure apparatus, and device manufacturing method

Publications (1)

Publication Number Publication Date
WO2009022506A1 true WO2009022506A1 (ja) 2009-02-19

Family

ID=40350562

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/062260 WO2009022506A1 (ja) 2007-08-10 2008-07-07 照明光学装置、露光装置、およびデバイス製造方法

Country Status (6)

Country Link
US (1) US8780328B2 (ja)
EP (2) EP3252801A1 (ja)
JP (1) JP5387982B2 (ja)
KR (1) KR101501303B1 (ja)
TW (1) TWI460545B (ja)
WO (1) WO2009022506A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012502490A (ja) * 2008-09-10 2012-01-26 カール・ツァイス・エスエムティー・ゲーエムベーハー 結像光学系
JP2012507160A (ja) * 2008-10-31 2012-03-22 カール・ツァイス・エスエムティー・ゲーエムベーハー Ｅｕｖマイクロリソグラフィ用の照明光学系
US20120075610A1 (en) * 2009-06-09 2012-03-29 Asml Netherlands B.V. Lithographic apparatus and method for reducing stray radiation

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8081296B2 (en) * 2007-08-09 2011-12-20 Nikon Corporation Illumination optical apparatus, exposure apparatus, and device manufacturing method
CN102722090B (zh) * 2012-06-08 2015-03-04 中国科学院光电技术研究所 一种照明均匀性补偿装置
DE102012218074A1 (de) * 2012-10-04 2013-08-14 Carl Zeiss Smt Gmbh Blenden-Vorrichtung

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Publication number Priority date Publication date Assignee Title
US5895737A (en) 1997-03-31 1999-04-20 Svg Lithography Systems, Inc. Method for adjusting an illumination field based on selected reticle feature
US6104474A (en) 1993-08-26 2000-08-15 Nikon Corporation Apparatus and method for controlling scanning exposure of photosensitive substrate
JP2002124453A (ja) * 2000-10-17 2002-04-26 Hitachi Ltd 露光装置、及びそれを用いて作製された半導体素子
US6452661B1 (en) 1998-02-27 2002-09-17 Nikon Corporation Illumination system and exposure apparatus and method
WO2005048326A1 (ja) * 2003-11-13 2005-05-26 Nikon Corporation 可変スリット装置、照明装置、露光装置、露光方法及びデバイスの製造方法
JP2005317611A (ja) * 2004-04-27 2005-11-10 Canon Inc 露光方法及び装置
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Publication number Priority date Publication date Assignee Title
US6104474A (en) 1993-08-26 2000-08-15 Nikon Corporation Apparatus and method for controlling scanning exposure of photosensitive substrate
US5895737A (en) 1997-03-31 1999-04-20 Svg Lithography Systems, Inc. Method for adjusting an illumination field based on selected reticle feature
US6452661B1 (en) 1998-02-27 2002-09-17 Nikon Corporation Illumination system and exposure apparatus and method
JP2002124453A (ja) * 2000-10-17 2002-04-26 Hitachi Ltd 露光装置、及びそれを用いて作製された半導体素子
WO2005048326A1 (ja) * 2003-11-13 2005-05-26 Nikon Corporation 可変スリット装置、照明装置、露光装置、露光方法及びデバイスの製造方法
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012502490A (ja) * 2008-09-10 2012-01-26 カール・ツァイス・エスエムティー・ゲーエムベーハー 結像光学系
JP2012507160A (ja) * 2008-10-31 2012-03-22 カール・ツァイス・エスエムティー・ゲーエムベーハー Ｅｕｖマイクロリソグラフィ用の照明光学系
US20120075610A1 (en) * 2009-06-09 2012-03-29 Asml Netherlands B.V. Lithographic apparatus and method for reducing stray radiation
US9188881B2 (en) * 2009-06-09 2015-11-17 Asml Netherlands B.V. Lithographic apparatus and method for reducing stray radiation

Also Published As

Publication number Publication date
JP5387982B2 (ja) 2014-01-15
KR20100050439A (ko) 2010-05-13
EP2178107A1 (en) 2010-04-21
EP2178107A4 (en) 2011-04-13
TWI460545B (zh) 2014-11-11
JPWO2009022506A1 (ja) 2010-11-11
KR101501303B1 (ko) 2015-03-10
TW200915014A (en) 2009-04-01
US20100141922A1 (en) 2010-06-10
EP3252801A1 (en) 2017-12-06
US8780328B2 (en) 2014-07-15

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