WO2008087754A1 - 量子カスケードレーザ - Google Patents

量子カスケードレーザ Download PDF

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Publication number
WO2008087754A1
WO2008087754A1 PCT/JP2007/061460 JP2007061460W WO2008087754A1 WO 2008087754 A1 WO2008087754 A1 WO 2008087754A1 JP 2007061460 W JP2007061460 W JP 2007061460W WO 2008087754 A1 WO2008087754 A1 WO 2008087754A1
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WO
WIPO (PCT)
Prior art keywords
emission
level
band
subband
mini
Prior art date
Application number
PCT/JP2007/061460
Other languages
English (en)
French (fr)
Inventor
Tadataka Edamura
Naota Akikusa
Kazuue Fujita
Atsushi Sugiyama
Takahide Ochiai
Original Assignee
Hamamatsu Photonics K.K.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics K.K. filed Critical Hamamatsu Photonics K.K.
Priority to EP07744803.3A priority Critical patent/EP2128940B1/en
Priority to US12/523,277 priority patent/US8068528B2/en
Publication of WO2008087754A1 publication Critical patent/WO2008087754A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3401—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers
    • H01S5/3402—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers intersubband lasers, e.g. transitions within the conduction or valence bands
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3086—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure doping of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3086—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure doping of the active layer
    • H01S5/309—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure doping of the active layer doping of barrier layers that confine charge carriers in the laser structure, e.g. the barriers in a quantum well structure

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)

Abstract

　半導体基板と、半導体基板上に設けられ、量子井戸発光層１７及び注入層１８からなる単位積層体１６が多段に積層されたカスケード構造を有する活性層とを備えて量子カスケードレーザを構成する。また、単位積層体１６は、そのサブバンド準位構造において、発光上準位Ｌｕｐと、発光下準位Ｌｌｏｗと、発光下準位よりも低いエネルギー準位からなる緩和ミニバンドＭＢとを有し、上準位から下準位への電子のサブバンド間遷移によって光が生成されるとともに、サブバンド間遷移を経た電子は、ＬＯフォノン散乱によって下準位ＬｌｏｗからミニバンドＭＢへと緩和され、ミニバンドＭＢを介して、注入層１８から後段の発光層へと注入されるように構成される。これにより、量子井戸発光層における反転分布を効率的に形成して、レーザ動作性能を向上することが可能な量子カスケードレーザが実現される。
PCT/JP2007/061460 2007-01-18 2007-06-06 量子カスケードレーザ WO2008087754A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP07744803.3A EP2128940B1 (en) 2007-01-18 2007-06-06 Quantum cascade laser
US12/523,277 US8068528B2 (en) 2007-01-18 2007-06-06 Quantum cascade laser

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007009519A JP5641667B2 (ja) 2007-01-18 2007-01-18 量子カスケードレーザ
JP2007-009519 2007-01-18

Publications (1)

Publication Number Publication Date
WO2008087754A1 true WO2008087754A1 (ja) 2008-07-24

Family

ID=39635763

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/061460 WO2008087754A1 (ja) 2007-01-18 2007-06-06 量子カスケードレーザ

Country Status (4)

Country Link
US (1) US8068528B2 (ja)
EP (1) EP2128940B1 (ja)
JP (1) JP5641667B2 (ja)
WO (1) WO2008087754A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011013432A1 (ja) * 2009-07-31 2011-02-03 浜松ホトニクス株式会社 量子カスケードレーザ
US20120207186A1 (en) * 2009-02-16 2012-08-16 The Board Of Regents Of The University Of Texas System Terahertz quantum cascade lasers (qcls)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5358807B2 (ja) * 2008-02-26 2013-12-04 横河電機株式会社 マルチホップ無線通信システム
JP5248881B2 (ja) 2008-02-28 2013-07-31 浜松ホトニクス株式会社 量子カスケードレーザ
JP2010165994A (ja) * 2009-01-19 2010-07-29 Hamamatsu Photonics Kk 量子カスケードレーザ
JP2010238711A (ja) * 2009-03-30 2010-10-21 Furukawa Electric Co Ltd:The 量子カスケードレーザ
JP2011035138A (ja) 2009-07-31 2011-02-17 Hamamatsu Photonics Kk 半導体発光素子
JP5350940B2 (ja) 2009-08-19 2013-11-27 浜松ホトニクス株式会社 レーザモジュール
JP2011243781A (ja) 2010-05-19 2011-12-01 Hamamatsu Photonics Kk 量子カスケードレーザ
US8325774B2 (en) * 2010-08-12 2012-12-04 Wisconsin Alumni Research Foundation High power, high efficiency quantum cascade lasers with reduced electron leakage
JP5776229B2 (ja) * 2011-03-07 2015-09-09 住友電気工業株式会社 量子カスケードレーザ
JP5729138B2 (ja) * 2011-05-30 2015-06-03 住友電気工業株式会社 光半導体デバイスの製造方法
JP5638483B2 (ja) * 2011-08-03 2014-12-10 株式会社東芝 半導体レーザ装置
US9054497B2 (en) * 2011-09-21 2015-06-09 The Trustees Of Princeton University Quantum cascade lasers with improved performance using interface roughness scattering
JP5941655B2 (ja) * 2011-10-28 2016-06-29 浜松ホトニクス株式会社 量子カスケードレーザ
JP5771120B2 (ja) 2011-10-28 2015-08-26 浜松ホトニクス株式会社 量子カスケードレーザの製造方法
CN102611003B (zh) * 2012-04-11 2014-01-08 中国科学院半导体研究所 量子点级联激光器
JP6276758B2 (ja) * 2013-05-23 2018-02-07 浜松ホトニクス株式会社 量子カスケードレーザ
JP6244668B2 (ja) * 2013-05-31 2017-12-13 住友電気工業株式会社 量子カスケードレーザ
JP6244667B2 (ja) * 2013-05-31 2017-12-13 住友電気工業株式会社 量子カスケードレーザ
KR102113256B1 (ko) * 2013-11-07 2020-05-20 삼성전자주식회사 다준위 에너지를 갖는 3중 연결 양자우물 구조를 포함하는 광학 소자
JP6259325B2 (ja) * 2014-03-12 2018-01-10 浜松ホトニクス株式会社 量子カスケードレーザ
WO2015136739A1 (ja) * 2014-03-13 2015-09-17 株式会社 東芝 半導体レーザ装置
US10340662B2 (en) * 2014-06-04 2019-07-02 Sharp Kabushiki Kaisha Quantum cascade laser
JP6627309B2 (ja) * 2014-08-14 2020-01-08 国立研究開発法人理化学研究所 窒化物半導体量子カスケードレーザー
JP6417199B2 (ja) * 2014-12-08 2018-10-31 浜松ホトニクス株式会社 量子カスケードレーザ装置
JP6371332B2 (ja) * 2016-05-20 2018-08-08 シャープ株式会社 量子カスケードレーザ
JP7129359B2 (ja) * 2019-02-27 2022-09-01 株式会社東芝 半導体レーザ用ウェーハおよび半導体レーザ

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See also references of EP2128940A4

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120207186A1 (en) * 2009-02-16 2012-08-16 The Board Of Regents Of The University Of Texas System Terahertz quantum cascade lasers (qcls)
WO2011013432A1 (ja) * 2009-07-31 2011-02-03 浜松ホトニクス株式会社 量子カスケードレーザ
JP2011035139A (ja) * 2009-07-31 2011-02-17 Hamamatsu Photonics Kk 量子カスケードレーザ
US8654809B2 (en) 2009-07-31 2014-02-18 Hamamatsu Photonics K.K. Quantum cascade laser

Also Published As

Publication number Publication date
EP2128940B1 (en) 2015-08-26
JP2008177366A (ja) 2008-07-31
JP5641667B2 (ja) 2014-12-17
EP2128940A1 (en) 2009-12-02
EP2128940A4 (en) 2014-08-27
US20100111127A1 (en) 2010-05-06
US8068528B2 (en) 2011-11-29

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