WO2008143066A1 - 半導体素子 - Google Patents

半導体素子 Download PDF

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Publication number
WO2008143066A1
WO2008143066A1 PCT/JP2008/058781 JP2008058781W WO2008143066A1 WO 2008143066 A1 WO2008143066 A1 WO 2008143066A1 JP 2008058781 W JP2008058781 W JP 2008058781W WO 2008143066 A1 WO2008143066 A1 WO 2008143066A1
Authority
WO
WIPO (PCT)
Prior art keywords
active layer
semiconductor element
electrodes
enhanced
values
Prior art date
Application number
PCT/JP2008/058781
Other languages
English (en)
French (fr)
Inventor
Hajime Shibata
Hitoshi Tampo
Koji Matsubara
Akimasa Yamada
Keiichiro Sakurai
Shogo Ishizuka
Shigeru Niki
Original Assignee
National Institute Of Advanced Industrial Science And Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Institute Of Advanced Industrial Science And Technology filed Critical National Institute Of Advanced Industrial Science And Technology
Priority to US12/601,248 priority Critical patent/US8304804B2/en
Publication of WO2008143066A1 publication Critical patent/WO2008143066A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/28—Materials of the light emitting region containing only elements of group II and group VI of the periodic system

Abstract

　本願発明の目的は、ＺｎＯ系の光半導体素子における発光効率を増大させることである。光半導体素子Ｂは、ｎ型Ｚｎ１－ｚＭｇｚＯ（バリア層）１１/Ｚｎ１－ｘＭｇｘＯ（活性層）１５/ｐ型Ｚｎ１－ｙＭｇｙＯ（バリア層）１７からなり、活性層１５から発光する構造である。それぞれのバリア層１１・１７に対して電極２３・２１を形成し、両電極２３・２１間に電圧を印加することにより、ＺｎＯ（活性層）１５からの発光が得られる。尚、ここで、ｘ＜ｙかつｘ＜ｚの関係があり、例えば、ｘ＝０．１、ｙ＝０．１５、ｚ＝０．１６などの値を例として選択することができる。ｘ＝０．１５、ｙ＝０．２５、ｚ＝０．２４などの値も選択可能である。この際、活性層のｘ値を大きくすることにより、発光波長を短波長側にシフトさせることができる。さらに、上記の結果に示したように、ｘ値を大きくすると、発光効率を高くすることができるため、発光素子としては優れていることがわかる。
PCT/JP2008/058781 2007-05-23 2008-05-13 半導体素子 WO2008143066A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/601,248 US8304804B2 (en) 2007-05-23 2008-05-13 Semiconductor device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-136859 2007-05-23
JP2007136859A JP5207511B2 (ja) 2007-05-23 2007-05-23 半導体素子

Publications (1)

Publication Number Publication Date
WO2008143066A1 true WO2008143066A1 (ja) 2008-11-27

Family

ID=40031775

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/058781 WO2008143066A1 (ja) 2007-05-23 2008-05-13 半導体素子

Country Status (3)

Country Link
US (1) US8304804B2 (ja)
JP (1) JP5207511B2 (ja)
WO (1) WO2008143066A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101894893A (zh) * 2010-06-08 2010-11-24 浙江大学 基于双层MgZnO薄膜异质结的电致发光器件

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103229306B (zh) 2010-09-22 2016-08-03 第一太阳能有限公司 具有氧化锌镁窗口层的薄膜光伏装置
EP2867928B1 (en) 2012-06-29 2018-08-15 Lumileds Holding B.V. Ii-vi based light emitting semiconductor device

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004193270A (ja) * 2002-12-10 2004-07-08 Sharp Corp 酸化物半導体発光素子
JP2004296796A (ja) * 2003-03-27 2004-10-21 Shin Etsu Handotai Co Ltd 発光素子および発光素子の製造方法
JP2005243955A (ja) * 2004-02-26 2005-09-08 Shin Etsu Handotai Co Ltd 発光素子およびその製造方法
JP2006086142A (ja) * 2004-09-14 2006-03-30 Shin Etsu Handotai Co Ltd 化合物半導体素子の製造方法
JP2007059667A (ja) * 2005-08-25 2007-03-08 Toshiba Lighting & Technology Corp 発光装置
JP2007123938A (ja) * 2007-01-26 2007-05-17 Rohm Co Ltd 酸化亜鉛系化合物半導体素子

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3562518B2 (ja) * 1991-02-21 2004-09-08 ソニー株式会社 半導体発光装置
EP1872415A4 (en) * 2005-03-30 2010-06-23 Moxtronics Inc Metal Oxide Semiconductor Films, Structures and Methods
WO2007015330A1 (ja) * 2005-08-03 2007-02-08 Stanley Electric Co., Ltd. 半導体発光素子及びその製造方法
JP2007273562A (ja) * 2006-03-30 2007-10-18 Toshiba Corp 半導体発光装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004193270A (ja) * 2002-12-10 2004-07-08 Sharp Corp 酸化物半導体発光素子
JP2004296796A (ja) * 2003-03-27 2004-10-21 Shin Etsu Handotai Co Ltd 発光素子および発光素子の製造方法
JP2005243955A (ja) * 2004-02-26 2005-09-08 Shin Etsu Handotai Co Ltd 発光素子およびその製造方法
JP2006086142A (ja) * 2004-09-14 2006-03-30 Shin Etsu Handotai Co Ltd 化合物半導体素子の製造方法
JP2007059667A (ja) * 2005-08-25 2007-03-08 Toshiba Lighting & Technology Corp 発光装置
JP2007123938A (ja) * 2007-01-26 2007-05-17 Rohm Co Ltd 酸化亜鉛系化合物半導体素子

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101894893A (zh) * 2010-06-08 2010-11-24 浙江大学 基于双层MgZnO薄膜异质结的电致发光器件

Also Published As

Publication number Publication date
US8304804B2 (en) 2012-11-06
JP2008294144A (ja) 2008-12-04
US20100163864A1 (en) 2010-07-01
JP5207511B2 (ja) 2013-06-12

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