WO2008072510A1 - Dispositif semi-conducteur - Google Patents

Dispositif semi-conducteur Download PDF

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Publication number
WO2008072510A1
WO2008072510A1 PCT/JP2007/073454 JP2007073454W WO2008072510A1 WO 2008072510 A1 WO2008072510 A1 WO 2008072510A1 JP 2007073454 W JP2007073454 W JP 2007073454W WO 2008072510 A1 WO2008072510 A1 WO 2008072510A1
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WIPO (PCT)
Prior art keywords
substrate
protruding electrode
bonding surface
semiconductor
semiconductor device
Prior art date
Application number
PCT/JP2007/073454
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English (en)
Japanese (ja)
Inventor
Tatsuya Katoh
Satoru Kudose
Tomokatsu Nakagawa
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Sharp Kabushiki Kaisha
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Publication date
Application filed by Sharp Kabushiki Kaisha filed Critical Sharp Kabushiki Kaisha
Publication of WO2008072510A1 publication Critical patent/WO2008072510A1/fr

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    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
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    • H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
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Definitions

  • the present invention relates to a semiconductor device, for example, an SOF (System equipped with an interposer substrate that is mounted on a film substrate and made of silicon, and a semiconductor element that is mounted on the interposer substrate to drive liquid crystal.
  • SOF System equipped with an interposer substrate that is mounted on a film substrate and made of silicon, and a semiconductor element that is mounted on the interposer substrate to drive liquid crystal.
  • the present invention relates to a semiconductor device suitable for On Film. Background art
  • FIG. 8 is a schematic cross-sectional view showing a configuration of a conventional semiconductor device 91.
  • the semiconductor device 91 includes a film substrate 98.
  • the film substrate 98 has a hole 82.
  • a wiring pattern 81 is formed on the surface of the film substrate 98.
  • the semiconductor device 91 is provided with an interposer substrate 92.
  • a plurality of protruding electrodes 90 made of gold are provided at positions facing the wiring pattern 81 on the surface of the interposer substrate 92 on the film substrate 98 side.
  • the interposer substrate 92 is mounted on the film substrate 98 having the wiring pattern 81 via the protruding electrodes 90! /.
  • a plurality of substrate protruding electrodes 94 made of gold are provided at positions facing the holes 82 on the surface of the interposer substrate 92 on the film substrate 98 side.
  • a semiconductor element 93 is provided in the hole 82 of the Finolem substrate 98.
  • a plurality of element protrusion electrodes 95 made of gold are provided at positions facing the substrate protrusion electrodes 94 on the surface of the semiconductor element 93 on the interposer substrate 92 side.
  • the semiconductor element 93 is mounted on the interposer substrate 92 via the element protruding electrode 95 and the substrate protruding electrode 94.
  • a sealing resin 99 is sealed between the semiconductor element 93 and the film substrate 98, and between the interposer substrate 92, the final substrate 98, and the semiconductor element 93.
  • Patent Document 1 Japanese Patent Application Laid-Open No. 2004-207566 (published July 22, 2004)
  • the present invention has been made in view of the above problems, and an object thereof is to realize a semiconductor device capable of stabilizing the bonding quality between a semiconductor element and an interposer substrate.
  • a semiconductor device includes an interposer substrate that is mounted on a mounting substrate and configured by a semiconductor, and a semiconductor element that is mounted on the interposer substrate.
  • the substrate has a substrate protruding electrode formed on the semiconductor element side, and the semiconductor element has an element protruding electrode to be bonded to the substrate protruding electrode.
  • the area of the element bonding surface of the element protruding electrode is The area of the substrate bonding surface of the substrate protruding electrode is larger.
  • another semiconductor device includes an interposer substrate that is mounted on a mounting substrate and configured of a semiconductor, and a semiconductor element that is mounted on the interposer substrate, and the interposer substrate includes the semiconductor
  • a semiconductor device having a substrate protruding electrode formed on an element side, wherein the semiconductor element has an element protruding electrode bonded to the substrate protruding electrode; The area of the element protruding electrode is larger than the area of the substrate protruding electrode when seen through from the interposer substrate side or the semiconductor element side.
  • another semiconductor device includes an interposer substrate that is mounted on a mounting substrate and is configured of a semiconductor, and a semiconductor element that is mounted on the interposer substrate, and the interposer substrate includes: In a semiconductor device having a substrate protruding electrode formed on a semiconductor element side, and the semiconductor element having an element protruding electrode bonded to the substrate protruding electrode, the element bonding surface of the element protruding electrode in a side view Is longer than the length of the substrate bonding surface of the substrate projection electrode.
  • the element protruding electrode is in contact with a surface having a large area among the substrate bonding surfaces of the substrate protruding electrode. It is possible to suppress the variation of the bonding load and stabilize the bonding quality.
  • the protruding electrode is generally called “bump” and is formed on the surface of the electrode portion and bonded to an object to be electrically connected.
  • the element bonding surface and the substrate bonding surface have a rectangular shape, and the major axes of the element bonding surface and the substrate bonding surface are arranged in parallel to each other.
  • the width of the element bonding surface in the minor axis direction is wider than the width of the substrate bonding surface in the minor axis direction! /.
  • the length in the major axis direction of the element bonding surface and the length in the major axis direction of the substrate bonding surface are equal to each other! /.
  • the side wall along the major axis direction of the substrate protruding electrode bites into the element bonding surface of the element protruding electrode to increase the bonding strength
  • the side wall of the substrate protruding electrode bites into the element bonding surface. Since the joints are long and tightly joined, the joint strength is increased and the joint quality is improved.
  • the length of the substrate bonding surface in the long axis direction is longer than the length of the element bonding surface in the long axis direction.
  • the element bonding surface is arranged so as to surround the substrate bonding surface when viewed from a direction perpendicular to the interposer substrate, and the element bonding surface and the substrate
  • the bonding surface has a rectangular shape, and the major axes of the element bonding surface and the substrate bonding surface are arranged in parallel to each other, and the element bonding surface is viewed from a direction perpendicular to the interposer substrate.
  • the one side is arranged 5 to 10 ⁇ m away from the corresponding one side of the substrate bonding surface! /,
  • the force S is preferable.
  • the height of the element protruding electrode and the height and force of the substrate protruding electrode are different from each other.
  • the element protruding electrode or the substrate protruding electrode can be lowered, the height variation can be reduced, and the bonding quality can be stabilized.
  • the substrate protruding electrode has a low level when the interposer substrate is connected to the tape carrier. , And the gap between the tape carrier wiring and the end of the interposer board may not be sufficient, and the wiring force of the tape carrier may contact the end of the interposer board, causing a short circuit between the wiring conductors of the tape carrier.
  • the substrate protruding electrode is made at 15 m and the substrate protruding electrode and the tape carrier wiring are connected, the distance between the tape carrier wiring and the end of the interposer substrate can be secured about 9 m.
  • the height is 10 to 15 m, a sufficient distance between the tape carrier spring and the end of the interposer substrate can be secured, and a short circuit between the wirings can be avoided. Further, since the element protruding electrode does not have such a concern, it can be made lower than the height of the substrate protruding electrode. Therefore, in the semiconductor device according to the present invention, it is preferable that the height of the element protruding electrode is lower than the height of the substrate protruding electrode! /.
  • the element protruding electrode can be made lower than the substrate protruding electrode, the variation in the height of the element protruding electrode can be reduced, the amount of Au used can be reduced, and the bonding quality can be stabilized. That's the power S.
  • the height of the element protruding electrode is 5 to 8111.
  • the element protrusion electrode can be lowered, the height variation of the element protrusion electrode can be reduced, the amount of Au used can be reduced, the cost can be reduced, and the bonding quality can be stabilized.
  • a height of the substrate protruding electrode is 10 to 15111.
  • the substrate protruding electrode has higher hardness than the element protruding electrode.
  • another semiconductor device includes an interposer substrate formed of a semiconductor mounted on a mounting substrate, and a semiconductor element mounted on the interposer substrate,
  • the interposer substrate has a substrate protruding electrode formed on the semiconductor element side, and the semiconductor element has a terminal bonded to the substrate protruding electrode.
  • the terminal is made of aluminum and the substrate protruding electrode is made of gold.
  • the bonding quality is improved by general A1-Au bonding such as wire bonding. Stabilization can be achieved.
  • Still another semiconductor device includes an interposer substrate that is mounted on a mounting substrate and configured by a semiconductor, and a semiconductor element that is mounted on the interposer substrate, and the interposer substrate includes the semiconductor element.
  • the element protrusion electrode can be configured to be lower than the substrate protrusion electrode, the variation in the height of the element protrusion electrode can be reduced, the amount of Au used can be reduced, and the bonding quality can be stabilized.
  • Still another semiconductor device includes an interposer substrate that is mounted on a mounting substrate and configured of a semiconductor, and a semiconductor element that is mounted on the interposer substrate.
  • the interposer substrate includes the semiconductor element.
  • the semiconductor element has a substrate protruding electrode formed on a side, and the semiconductor element has a device protruding electrode bonded to the substrate protruding electrode.
  • the substrate bonding surface of the protruding electrode has a rectangular shape, the major axes of the element bonding surface and the substrate bonding surface are arranged in parallel to each other, and the width of the element bonding surface in the minor axis direction is The major axis direction length of the substrate bonding surface, which is wider than the minor axis width of the substrate bonding surface, is longer than the major axis length of the element bonding surface.
  • the side wall along the long axis direction of the substrate protruding electrode does not only bite into the element bonding surface of the element protruding electrode, but the side wall along the short axis direction of the element protruding electrode causes the substrate protruding electrode to Bite in the opposite direction to the substrate bonding surface. For this reason, the substrate protruding electrode and the element protruding electrode are bonded so as to be held together, the bonding strength is further increased, and the bonding quality is further improved.
  • the semiconductor device according to the present invention is configured such that, even when a displacement occurs in the contact position between the substrate protruding electrode and the element protruding electrode, the element protruding electrode is out of the substrate bonding surface of the substrate protruding electrode. It is possible to contact a surface with a large area, and fluctuations in the bonding load can be suppressed to stabilize the bonding quality.
  • FIG. 1 is a schematic cross-sectional view showing a configuration of a semiconductor device according to an embodiment.
  • FIG. 2 is a schematic cross-sectional view showing the dimensional relationship between the substrate bonding surface of the substrate protruding electrode and the element bonding surface of the element protruding electrode according to the embodiment.
  • FIG. 3 is a schematic cross-sectional view showing a dimensional relationship between a substrate protruding electrode and an element protruding electrode according to the embodiment.
  • FIG. 4 is a schematic cross-sectional view showing another dimensional relationship between the substrate bonding surface of the substrate protruding electrode and the element bonding surface of the element protruding electrode according to the embodiment.
  • FIG. 5 is a schematic cross-sectional view showing still another dimensional relationship between the substrate bonding surface of the substrate protruding electrode and the element bonding surface of the element protruding electrode according to the embodiment.
  • FIG. 6 is a schematic cross-sectional view showing another dimensional relationship between the substrate protruding electrode and the element protruding electrode according to the embodiment.
  • FIG. 7 is a schematic cross-sectional view showing still another dimensional relationship between the substrate protruding electrode and the element protruding electrode according to the embodiment.
  • FIG. 8 is a schematic cross-sectional view showing a configuration of a conventional semiconductor device.
  • FIG. 1 is a schematic cross-sectional view showing the configuration of the semiconductor device 1 according to the embodiment.
  • the semiconductor device 1 includes a film substrate 8.
  • the film substrate 8 has holes 12.
  • a wiring pattern 11 is formed on the surface of the film substrate 8! /.
  • the semiconductor device 1 is provided with an interposer substrate 2! /.
  • a plurality of protruding electrodes (bumps) 10 made of gold are provided at positions facing the wiring pattern 11 on the surface of the interposer substrate 2 on the film substrate 8 side.
  • the interposer substrate 2 is mounted on the film substrate 8 having the wiring pattern 11 via the protruding electrodes 10! /.
  • a plurality of substrate protruding electrodes (bumps) 4 made of gold are provided.
  • a semiconductor element 3 for driving the liquid crystal is provided in the hole 12 of the film substrate 8.
  • a plurality of element protrusion electrodes (bumps) 5 made of gold are provided at positions facing the substrate protrusion electrodes 4 on the surface of the semiconductor element 3 on the interposer substrate 2 side.
  • the semiconductor element 3 is mounted on the interposer substrate 2 via the element protruding electrode 5 and the substrate protruding electrode 4.
  • a sealing resin 9 is sealed between the semiconductor element 3 and the film substrate 8 and between the interposer substrate 2, the film substrate 8, and the semiconductor element 3.
  • FIG. 2 is a schematic cross-sectional view showing a dimensional relationship between the substrate bonding surface 6 of the substrate protruding electrode 4 and the element bonding surface 7 of the element protruding electrode 5 according to the embodiment.
  • the substrate bonding surface 6 has a rectangular shape.
  • the element bonding surface 7 has a rectangular shape larger than the substrate bonding surface 6 and is disposed so as to surround the substrate bonding surface 6.
  • the major axes of the element bonding surface 7 and the substrate bonding surface 6 coincide with each other.
  • the width W2 in the minor axis direction of the element bonding surface 7 is wider than the width W1 in the minor axis direction of the substrate bonding surface 6.
  • the length L2 in the major axis direction of the element bonding surface 7 is longer than the length L1 in the major axis direction of the substrate bonding surface 6.
  • the edge of the substrate bonding surface 6 along the long axis direction is separated from the edge of the element bonding surface 7 along the long axis direction by a distance D1.
  • the edge of the substrate bonding surface 6 along the minor axis direction is separated from the edge of the element bonding surface 7 along the minor axis direction by a distance D2.
  • the length L2 of the element bonding surface 7 is, for example, 75 m, and the width W2 is, for example, 45 ⁇ m.
  • the length L1 of the substrate bonding surface 6 is 60 ⁇ m, for example.
  • the width Wl is, for example, 30 m. Therefore, the distance D1 and the distance D2 are 7. ⁇ ⁇ .
  • the substrate protruding electrode 4 has a higher hardness than the element protruding electrode 5.
  • the hardness of the protruding electrode can be adjusted by the presence or absence of annealing. Bonding quality can be improved by the hard and thin substrate protruding electrode 4 biting into the soft and low element protruding electrode 5.
  • the surface roughness of the element protrusion electrode 5 and the surface roughness of the substrate protrusion electrode 4 may be different from each other by 0.5 am or more. It is possible to increase the contact area by increasing the unevenness of the contact surface and increase the bonding quality by increasing the bonding strength.
  • the surface roughness of the protruding electrode can be adjusted by changing the measuring conditions such as the time of immersion in the etching solution.
  • bumps for confirming the collapsed state of the bumps may be provided at the corners of the chip. It can be determined from the image taken by the infrared microscope that the bumps spread out, and the bumps collide with each other and are compressed together! /. Based on this judgment, the fine adjustment can be made! Since it becomes possible, the joining quality can be improved.
  • the shape of the substrate protruding electrode 4 and the element protruding electrode 5 viewed from the direction perpendicular to the interposer substrate 3 may be a square.
  • the force required to make the bumps a vertically long rectangle to secure the bonding area with the lead.
  • the bump must be connected to the lead if it is connected to the metal wiring. Therefore, it can be made square to make the joining state uniform and to improve the joining quality.
  • the bump size of the substrate protrusion electrode 4 and the bump size of the element protrusion electrode 5 are different from each other, and the bump size of the element protrusion electrode 5 is larger than the bump size of the substrate protrusion electrode 4. . For this reason, it is possible to suppress the variation in the bonding load caused by the bonding position deviation caused by the bump formation position deviation, the startup position deviation, and the equipment capability.
  • FIG. 3 is a schematic cross-sectional view showing a dimensional relationship between the substrate protruding electrode 4 and the element protruding electrode 5 according to the embodiment.
  • the bump height HI of the substrate protruding electrode 4 is, for example, 15 111
  • the element protruding electrode 5 bump height H2 is, for example, 8 m.
  • the bump height of the element protrusion electrode 5 and the bump height of the substrate protrusion electrode 4 are different from each other, and the bump height of the element protrusion electrode 5 is lower than the bump height of the substrate protrusion electrode 4. ing.
  • Element protruding electrode 5 The bump height H2 may be as low as 5 m, for example.
  • the amount of Au used can be reduced and the cost can be reduced. Further, when the bump height of the element protruding electrode 5 is lowered, the height variation of the element protruding electrode 5 is reduced, so that the bonding quality is stabilized.
  • the bump height HI of the substrate protruding electrode 4 may be as low as 10 inches, for example. Lowering the substrate protrusion electrode 4 can reduce the amount of Au used and can reduce costs. Further, since the height variation is reduced, the bonding quality is stabilized.
  • the bonding quality between the element protrusion electrode 5 and the substrate protrusion electrode 4 is stable. To do.
  • the element projecting electrode 5 and the substrate projecting electrode 4 having different sizes are converted to approximately 80% in terms of the bonding area in all the bumps.
  • the remaining 20% of bumps are the same size. It should be noted that all bumps may be configured so that the bump sizes are different!
  • redundant bumps may be provided.
  • the quality of the device can be improved by stabilizing the device characteristics.
  • the substrate protruding electrode 4 may be bonded to a terminal formed of aluminum on the semiconductor element 3 without providing the element protruding electrode 5. Bonding quality can be stabilized by general Al-Au bonding such as wire bonding.
  • FIG. 4 is a schematic cross-sectional view showing another dimensional relationship between the substrate bonding surface 6 of the substrate protruding electrode 4 and the element bonding surface 7 of the element protruding electrode 5 according to the embodiment.
  • the length in the major axis direction of the element bonding surface 7 and the length in the major axis direction of the substrate bonding surface 6 may be equal to each other.
  • Side wall force along the major axis direction of the substrate projection electrode 4 The strength of the junction protrudes from the element bonding surface 7 of the element projection electrode 5 and increases the bonding strength, but when configured as shown in FIG.
  • the side wall of the electrode 4 is longer than the configuration shown in FIG. 2 and is joined so as to fit together, so that the joining strength is increased and the joining quality is improved.
  • FIG. 5 shows the substrate bonding surface 6 of the substrate protruding electrode 4 and the element protruding electrode 5 according to the embodiment.
  • 7 is a schematic cross-sectional view showing still another dimensional relationship with the child bonding surface 7.
  • the length of the substrate bonding surface 6 in the long axis direction may be longer than the length of the element bonding surface 7 in the long axis direction.
  • FIG. 6 is a schematic cross-sectional view showing another dimensional relationship between the substrate protruding electrode 4 and the element protruding electrode 5 according to the embodiment. While the shape and size of the substrate bonding surface 6 and the element bonding surface 7 are the same, the height of the substrate protruding electrode 4 and the height of the element protruding electrode 5 may be different. The height of the substrate protruding electrode 4 that is lower than the substrate protruding electrode 4 is 15 m, for example, and the height of the element protruding electrode 5 is 8 m, for example. The height of the element protruding electrode 5 may be as low as 5 m, for example.
  • the element protruding electrode 5 is configured to be low, and therefore it is possible to reduce the amount of Au used and reduce the cost. Further, since the element protruding electrode 5 is lowered, the height variation is reduced, and the bonding quality can be stabilized.
  • FIG. 7 is a schematic cross-sectional view showing still another dimensional relationship between the substrate protruding electrode 4 and the element protruding electrode 5 according to the embodiment. If the substrate bonding surface 6 and the element bonding surface 7 have the same shape and size, when bonding displacement occurs, one end of the substrate protruding electrode 4 protrudes from one end of the element protruding electrode 5, With the end protruding from the other end of the substrate protruding electrode 4, pressure bonding is performed.
  • One end of the substrate protruding electrode 4 protruding from one end of the element protruding electrode 5 and the other end of the element protruding electrode 5 protruding from the other end of the substrate protruding electrode 4 are not crimped, but the element protruding electrode 5
  • One end of the substrate protruding electrode 4 protruding from one end of the substrate does not contact the surface of the semiconductor element 3 on the interposer substrate 2 side, and the other end of the element protruding electrode 5 protruding from the other end of the substrate protruding electrode 4 is
  • the interposer substrate 2 is configured not to contact the surface of the semiconductor element 3 side. For this reason, it is possible to avoid quality degradation caused by bumps contacting the surface of the chip.
  • the interposer substrate 2 When viewed from the side or the semiconductor element 3 side, the area of the element protruding electrode 4 is larger than the area of the substrate protruding electrode 5. Further, for example, in a side view of the semiconductor device shown in FIG. 1 in which the lateral force is also viewed, the length (LI, L2) is longer than the length (Wl, W2) of the substrate bonding surface of the substrate protruding electrode 4. Similarly, in side view, the length of the element bonding surface of the element protruding electrode 5 is longer than the length of the substrate bonding surface of the substrate protruding electrode 4 in the lateral direction of FIGS. .
  • the planar shape of the protruding electrode is a square shape, but may be an elliptical shape or a round shape.
  • the present invention can be applied to a semiconductor device including an interposer substrate that is mounted on a film substrate and made of silicon, and a semiconductor element that is mounted on the interposer substrate to drive a liquid crystal. .

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Wire Bonding (AREA)

Abstract

L'invention concerne un dispositif semi-conducteur (1) dans lequel la qualité de la liaison entre un élément semi-conducteur et le substrat d'interposition est stabilisée. Le dispositif semi-conducteur comporte le substrat d'interposition (2) monté sur un substrat de film (8) et fait de silicium, et un élément semi-conducteur (3) monté dans le substrat d'interposition (2) de façon à commander des cristaux liquides. Le substrat d'interposition (2) a une électrode en saillie de substrat (4) formée sur le côté de l'élément semi-conducteur (3). L'élément semi-conducteur (3) a une électrode en saillie d'élément (5) articulée à l'électrode de projection de substrat (4). La zone de liaison à l'élément de l'électrode en saillie d'élément (5) est plus grande que la zone de liaison au substrat de l'électrode en saillie de substrat (4).
PCT/JP2007/073454 2006-12-15 2007-12-05 Dispositif semi-conducteur WO2008072510A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006339048A JP4376893B2 (ja) 2006-12-15 2006-12-15 半導体装置
JP2006-339048 2006-12-15

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Publication Number Publication Date
WO2008072510A1 true WO2008072510A1 (fr) 2008-06-19

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WO (1) WO2008072510A1 (fr)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5304536B2 (ja) 2009-08-24 2013-10-02 ソニー株式会社 半導体装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0385642U (fr) * 1989-12-22 1991-08-29
JPH05343473A (ja) * 1992-06-11 1993-12-24 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPH11251363A (ja) * 1998-03-03 1999-09-17 Olympus Optical Co Ltd フリップチップ実装方法及びフリップチップ実装構造
JP2002208613A (ja) * 2001-01-12 2002-07-26 Nec Kansai Ltd 半導体装置
JP2004207566A (ja) * 2002-12-26 2004-07-22 Seiko Instruments Inc 半導体装置、表示装置、及び、その製造方法
JP2005236123A (ja) * 2004-02-20 2005-09-02 Advanced Display Inc Ｉｃ接続構造および液晶表示装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0385642U (fr) * 1989-12-22 1991-08-29
JPH05343473A (ja) * 1992-06-11 1993-12-24 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPH11251363A (ja) * 1998-03-03 1999-09-17 Olympus Optical Co Ltd フリップチップ実装方法及びフリップチップ実装構造
JP2002208613A (ja) * 2001-01-12 2002-07-26 Nec Kansai Ltd 半導体装置
JP2004207566A (ja) * 2002-12-26 2004-07-22 Seiko Instruments Inc 半導体装置、表示装置、及び、その製造方法
JP2005236123A (ja) * 2004-02-20 2005-09-02 Advanced Display Inc Ｉｃ接続構造および液晶表示装置

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TW200843080A (en) 2008-11-01
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