WO2008050440A1 - Amplificateur de puissance - Google Patents

Amplificateur de puissance Download PDF

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Publication number
WO2008050440A1
WO2008050440A1 PCT/JP2006/321425 JP2006321425W WO2008050440A1 WO 2008050440 A1 WO2008050440 A1 WO 2008050440A1 JP 2006321425 W JP2006321425 W JP 2006321425W WO 2008050440 A1 WO2008050440 A1 WO 2008050440A1
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WO
WIPO (PCT)
Prior art keywords
vswr
power
current
amplifier
reflection coefficient
Prior art date
Application number
PCT/JP2006/321425
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English (en)
Japanese (ja)
Inventor
Katsuhiro Sakai
Shinji Ueda
Takashi Enoki
Original Assignee
Panasonic Corporation
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Publication date
Application filed by Panasonic Corporation filed Critical Panasonic Corporation
Priority to PCT/JP2006/321425 priority Critical patent/WO2008050440A1/fr
Publication of WO2008050440A1 publication Critical patent/WO2008050440A1/fr

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0288—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers using a main and one or several auxiliary peaking amplifiers whereby the load is connected to the main amplifier using an impedance inverter, e.g. Doherty amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32—Modifications of amplifiers to reduce non-linear distortion
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/34—Negative-feedback-circuit arrangements with or without positive feedback
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
    • H03F3/602—Combinations of several amplifiers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02—Transmitters
    • H04B1/04—Circuits
    • H04B1/0458—Arrangements for matching and coupling between power amplifier and antenna or between amplifying stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/393—A measuring circuit being coupled to the output of an amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02—Transmitters
    • H04B1/04—Circuits
    • H04B2001/0408—Circuits with power amplifiers
    • H04B2001/0433—Circuits with power amplifiers with linearisation using feedback

Definitions

  • the present invention relates to a power amplifier used for a portable wireless device and the like, and more particularly to a power amplifier that supplies stable power when a load changes.
  • a power amplifier that is mounted on a portable radio device and amplifies a transmission signal is known.
  • the impedance of the antenna always varies depending on the surrounding environment.
  • This type of power amplifier is typically impedance matched to provide the maximum gain or output power level for a particular load value.
  • impedance of the antenna which is the load of this type of power amplifier, fluctuates, impedance mismatch may occur at the output stage of the power amplifier, and the desired power may not be transmitted for the antenna force. Furthermore, there is a risk that power efficiency and distortion will deteriorate.
  • a method is known in which an isolator is provided at the output stage of a power amplifier and the load is not varied.
  • Patent Document 1 Japanese Patent Laid-Open No. 9-83403 Disclosure of the invention
  • the impedance of the different impedance is reduced. Since it is necessary to provide multiple matching circuits, the entire matching circuit may become large. In addition, even if the impedance is matched and the output power level is relatively improved by switching the matching circuit, there is no means for preventing distortion degradation. Therefore, there is a possibility that the power amplifier cannot be used.
  • the power amplifier described in Patent Document 1 describes a configuration in which the matching circuit is selected so that the reflected power is minimized, but in this configuration, all the matching circuits are compared. As a result, if the minimum value of the reflected power itself is large, there is a problem that the effect of improving the output power level cannot be obtained.
  • An object of the present invention is to provide a power amplifier such as a single amplifier or a Doherty amplifier that can prevent deterioration of output power level and distortion against load fluctuations with a simple circuit configuration.
  • the power amplifier according to the present invention has an amplifying element for amplifying power, and a degree of reflection by a standing wave generated by interference between a traveling wave output from the amplifying element and a reflected wave input to the amplifying element.
  • VSWR detection means for detecting the VSWR value, and a current flowing through the amplifying element based on the VSWR value detected by the VSWR detection means so that the power level exceeds the first threshold value and the distortion level becomes the second threshold value or less.
  • a current control means for controlling.
  • a power amplifier includes a reflection element that detects a reflection coefficient that is a ratio of an amplification element that multiplies power and a traveling wave output from the amplification element and a reflected wave input to the amplification element. And current control for controlling the current flowing through the amplifying element so that the power level exceeds the first threshold and the distortion level is equal to or lower than the second threshold based on the reflection coefficient detected by the reflection coefficient detecting means. Means.
  • the VSWR value or reflection coefficient indicating the degree of signal reflection is monitored, and the current value of the power amplifier is always controlled to an appropriate value or range according to these values. Therefore, it is possible to prevent the output power level and distortion from being deteriorated even when the load of the power amplifier fluctuates.
  • it since it becomes possible to prevent deterioration of distortion, it can also be applied to portable radio devices that are used under ambient environment conditions where antenna impedance is severe, which has been impossible until now.
  • the power supply voltage of the power amplifier drops, distortion can be prevented from being deteriorated, so that it can be used even when the battery voltage of the portable radio device is reduced. The time can be extended.
  • FIG. 2 Diagram showing measurement points measured to obtain the approximate characteristics of output power level and distortion shown in Fig. 1.
  • FIG. 7 A first block diagram in which the single-configuration power amplifier according to Embodiment 2 of the present invention is used in a two-stage non-configuration.
  • FIG. 9 A third block diagram in which the single-configuration power amplifier according to Embodiment 2 of the present invention is used in a two-stage non-configuration.
  • FIG. 10 is a block diagram showing the first configuration of the VSWR detection means in Embodiment 3 of the present invention.
  • FIG. 11 is a block diagram showing the second configuration of the VSWR detection means in the third embodiment of the present invention.
  • FIG. 12 is a block diagram showing the third configuration of the VSWR detection means in the third embodiment of the present invention.
  • Block diagram showing the configuration of the current control means for controlling the bias voltage of the amplifying element in the fourth embodiment of the present invention.
  • FIG. 16 is a block diagram showing a configuration of current control means for controlling the matching circuit of the output stage of the amplifier element in the fourth embodiment of the present invention.
  • FIG. 17 is a block diagram showing a configuration of current control means for performing variable phase control in Embodiment 4 of the present invention.
  • FIG. 18 is a block diagram showing a configuration of current control means for controlling the distribution ratio of the current of the amplifying element in the fourth embodiment of the present invention.
  • the power amplifier of the present invention includes a VSWR detection means for detecting a VSWR value of a standing wave generated by interference between a traveling wave output from the power amplifier camera and a reflected wave reflected at the antenna end, and a VSWR detection means And a current control means for controlling the current flowing through the power amplifier based on the detected value (that is, the VSWR value) detected.
  • a configuration including a reflection coefficient detection means for detecting a reflection coefficient that is a ratio of a traveling wave and a reflected wave may be adopted.
  • the VSWR value (voltage standing wave ratio) is the degree to which a part of the signal is reflected on the circuit when a high-frequency signal passes through the device (that is, the degree of signal reflection). It is widely used as an indicator of high frequency characteristics.
  • this VSWR value is 1, it is an ideal state where there is no reflection at all. The larger the reflection, the larger the VSWR value, and the larger the signal loss.
  • a standing wave is a wave in which the reflected wave interferes with the original traveling wave and does not change the node or belly of the wave, but only the amplitude changes. The state of reflection depends on the magnitude of this amplitude.
  • the impedance of the antenna can be known.
  • the degree of impedance matching between the cable and antenna is indicated by the V SWR value.
  • the current control means flows to the power amplifier based on the VSWR value detected by the VSWR detection means or the reflection coefficient detected by the reflection coefficient detection means.
  • the current By appropriately controlling the current, it is possible to prevent deterioration of the output power level and distortion of the power amplifier.
  • FIG. 1 is a schematic characteristic diagram showing characteristics of output power level and distortion level in a Doherty amplifier in order to introduce the present invention.
  • the horizontal axis represents the current ratio (IcZlp) between the carrier current Ic of the carrier amplifier and the peak current Ip of the peak amplifier (IcZlp), and the left vertical axis represents the distortion level ACLR (Adjacent Channel Leakage power Ratio) [dBc]
  • the right vertical axis represents Pout [dBm] indicating the output power level.
  • the horizontal axis shows the current ratio threshold A, the left vertical axis shows the ACLR threshold (ie, distortion threshold) B, and the right vertical axis shows the Pout threshold (ie, power threshold).
  • the characteristic diagram of the lower solid line in Fig. 1 shows the ACLR characteristics (that is, the distortion level characteristics) when the reflection coefficient ⁇ is varied.
  • the characteristic diagram of the upper dashed line in Fig. 1 shows the Pout characteristic (that is, the output power level characteristic) when the reflection coefficient ⁇ is changed.
  • FIG. 2 is a diagram showing measurement points measured to obtain the approximate characteristics of output power level and distortion shown in FIG.
  • the points 0.1, 0.3, 0.6, 0.7, and 1.0 of the circles are concentric circles indicating the reflection coefficients ⁇ .
  • Re ( ⁇ ) on the horizontal axis represents the real axis of the reflection coefficient
  • ⁇ ( ⁇ ) on the vertical axis represents the imaginary axis of the reflection coefficient.
  • 1 to 12 on the circumference show the measurement points when the load phase (that is, the impedance of the antenna) is changed 360 ° at 30 ° intervals. That is, this figure shows each measurement point when the phase of the reflection coefficient ⁇ is changed by 30 ° by 0.1, 0.3, 0.6, 0.7, and 1.0.
  • FIG. 1 The schematic characteristic diagram of FIG. 1 will be described with reference to the measurement points in FIG. 2.
  • the reflection coefficient ⁇ is small.
  • the measurement points on the circumference of Fig. 2 are phased at 90 ° intervals of 1, 4, 7, and 10.
  • the measurement data when measuring 4 points at is shown.
  • the output power level In the characteristic of the output power level indicated by the broken line on the upper side of FIG. 1, when the reflection coefficient ⁇ is small, the output power level is above the power threshold C, and therefore the output power level characteristic is good. However, as the reflection coefficient ⁇ increases, the output power level decreases, and when the reflection coefficient 0 becomes very large, the output power level falls below the power threshold C (allowable value) and can be tolerated as power deterioration increases. Disappear. In other words, when the reflection coefficient ⁇ increases, the power reflection increases, so the output power decreases.
  • the output power level is improved, and if the current ratio (IcZlp) is greater than the current ratio threshold A, the output power is increased even if the reflection coefficient ⁇ is very large.
  • the power level exceeds the power threshold C and the power degradation falls within the allowable range.
  • the distortion level (ACLR) increases, and when the distortion level (ACLR) exceeds the distortion threshold value ⁇ (allowable value), the deterioration of the distortion increases and becomes unacceptable.
  • the current ratio (IcZlp) on the horizontal axis is increased, the distortion level (ACLR) decreases, and if the current ratio (IcZlp) is greater than the current ratio threshold A, the reflection coefficient ⁇ becomes very large.
  • the distortion level (ACLR) is below the distortion threshold B, and the distortion degradation falls within the allowable range.
  • the current ratio (IcZlp) contributes to the performance improvement of the Dono and Tee amplifiers, and is considered to be a large ratio. Since the peak amplifier is biased with class C bias, the peak current Ip of the peak amplifier This means that when the ratio is large, the ratio of contribution to the performance improvement of the Doherty amplifier becomes smaller and the distortion characteristics worsen. However, if the peak current Ip is small, the distortion characteristics can be improved by taking the optimum value of the peak current Ip when the load is 50 ⁇ .
  • Non-Patent Document 1 W.H.Doherty, "A New High Efficiency Power Amplifier For Modular ed Wave", Proceeding of the Institude of Radio Engineers, Vol. 24, No. 9, September 193 6, ppl l63-1182
  • FIG. 3 is a basic configuration diagram of a general Doherty amplifier.
  • the Doherty amplifier includes two amplifiers called a carrier amplifier 101 and a peak amplifier 102 and three ⁇ 4 lines A, B, and C forces. Only the carrier amplifier 101 operates in the low power region, and the carrier amplifier 101 and the peak amplifier 102 are biased to operate together in the high power region.
  • FIG. 4 is an equivalent circuit showing the impedance at each node when the peak amplifier 102 is OFF in the low power region in the Dono / Tee amplifier shown in FIG.
  • this figure is an equivalent circuit diagram showing the impedance seen from the load 103 side from each node when the Dono and Tee amplifiers shown in FIG. 3 operate in the low power region, and the impedance Z is connected to the load 103.
  • the impedance when the load 103 side is viewed from each node when the peak amplifier 102 is OFF is expressed.
  • FIG. 5 shows an equivalent circuit showing the impedance at each node when the peak amplifier 102 is ON in the high power region in the Dono / Tee amplifier shown in FIG.
  • this figure is an equivalent circuit diagram showing the impedance as seen from the load 103 side from each node when the Dono / Ty amplifier shown in FIG. 3 operates in the high power region. When connected, the negative from each node when the peak amplifier 102 is turned on.
  • ⁇ ⁇ 4 line C directly connected to load 103 causes impedance Z of load 103 to be ⁇ /
  • impedance Z Z2 is converted in impedance by ⁇ Z4 line A, and the load is loaded from carrier amplifier 101.
  • the impedance of the 03 side is 2Z.
  • the peak amplifier 102 is turned on, and the peak amplifier 102 supplies power to the load 103.
  • both the impedance of the ⁇ ⁇ 4 line A force viewed from the load 103 side and the impedance viewed from the peak amplifier 102 toward the load 103 side are Z.
  • the impedance seen in 03 is 2Z at low power operation and at high power operation.
  • This design makes it possible to achieve high-efficiency operation over a high dynamic range.
  • Fig. 1 shows that the carrier amplifier 101 and the peak amplifier 102 are operating in the high power region as shown in Fig. 5. Is. At this time, the impedance Z seen from the output stage of the carrier amplifier 101 becomes equal to the impedance Z of the load 103. Thus, carrier amplifier 1
  • the characteristics of 01 are considered to be similar to those of Doherty amplifier. Therefore, the output power level and distortion characteristics of the Doherty amplifier obtained in Fig. 1 can be extended to a single amplifier.
  • a single amplifier having a single power amplifier is taken as an example, and deterioration and distortion of the output power level are taken as an example.
  • a method for preventing the deterioration of the material will be described in detail. Note that in the drawings used in the following embodiments, the same constituent elements are denoted by the same reference numerals, and redundant description is omitted as much as possible.
  • the embodiment will be described in the case of using the VSWR detection means for detecting the VSWR value indicating the reflection degree of the signal, but the reflection coefficient for detecting the reflection coefficient instead of the VSWR detection means. Detection means may be used. When the reflection coefficient detection means is used, the VSWR detection means should be read as the reflection coefficient detection means.
  • FIG. 6 is a block diagram showing a basic configuration of a single-configuration power amplifier according to Embodiment 1 of the present invention.
  • This power amplifier includes an amplifying element 111, a VSWR detection means 112, and a current control means 113, and an antenna 114 is connected to the output of the VSWR detection means 112.
  • the VSWR detection means 112 has a function of detecting the VSWR value of the amplification element 111, and the current control means 113 controls the current value of the amplification element 111 based on the VSWR value detected by the VSWR detection means 112. .
  • the antenna 114 Reflection coefficient detection means for detecting a reflection coefficient, which is the ratio of the traveling wave and the reflected wave from the antenna 114, may be provided.
  • the VSWR detection means 112 is provided, and the reflection coefficient detection means is provided.
  • the VSWR detection means 112 is replaced with the reflection coefficient detection means 112.
  • the VSWR detection means 112 at the output stage of the amplifying element 111 detects the load fluctuation. That is, if the value of VSWR detected by the VSWR detection means 112 has changed, it is determined that the impedance of the antenna 114 has changed.
  • the reflection coefficient detecting means 112 is provided at the output stage of the amplifying element 111, if the reflection coefficient detected by the reflection coefficient detecting means 112 changes, the impedance of the antenna 114 changes.
  • the current control of the amplification element 111 performed by the current control unit 113 will be described. If the VSWR value detected by the VS WR detection means 112 is small, the matching impedance is considered to be close to 50 ⁇ , so it is determined that the distortion is satisfied at the same time as the stability of the output power level. The control means 113 does not control the current of the amplification element 111. In addition, when the VSWR value detected by the VSWR detection means 112 is large, it is considered that the output power level and distortion are degraded when the current value of the amplification element 111 is small. Current control is performed so that the current increases.
  • the current control means 113 determines the current of the amplifying element 111 when the reflection coefficient detected by the reflection coefficient detecting means 112 is small. Control is not performed, but when the reflection coefficient is large, it is considered that the output power level and distortion have deteriorated when the current value of the amplifying element 101 is small. Therefore, the current control means 113 has a large current in the amplifying element 111. Current control is performed so that
  • FIG. 7 is a first block diagram in which a single-configuration power amplifier according to Embodiment 2 of the present invention is used in a two-stage balance configuration.
  • the configuration of the power amplifier in Fig. 7 is shown in Fig. 6.
  • the configuration is basically the same as that of the power amplifier, but the amplification device 11 la and the amplification device 11 lb having the same capacity are balanced in two stages.
  • the two-stage configuration of the amplifying elements ll la and 11 lb may be a Dono and tee amplifier, but the circuit in that case may be configured as shown in FIG.
  • the present invention can be realized even if a single-configuration power amplifier has a balanced configuration of three or more stages.
  • the VSWR detection means 112 of the second embodiment shown in FIG. 7 is provided after the output of the amplification element 11 la and the output of the amplification element 111b are combined. Since the VSWR detecting means 112 performs the same method as in FIG. The reflection coefficient detection means 112 may be used instead of the VSWR detection means 112.
  • the amplifying element 11 la is regarded as a carrier amplifier
  • the amplifying element 11 lb is regarded as a peak amplifier
  • Ic the carrier current of the carrier amplifier
  • Ip the peak current of the peak amplifier
  • Ic + the current control unit 113 performs the following current control.
  • the current ratio (IcZlc) between the carrier current Ic and the peak current Ip is small! Therefore, the current control means 113 controls the current of the carrier amplifier (amplifying element 11 la) and the peak amplifier (amplifying element 11 lb) and sets the current ratio (IcZlc) to a desired value or more to prevent distortion deterioration. . Further, since the distortion is degraded when the carrier current Ic is small, the current control means 113 controls the current of the carrier amplifier (amplifying element 11 la), and the carrier current Ic is set to a desired value or more to distort the carrier current Ic. Prevent deterioration. If the peak current Ip is large, the distortion deteriorates. Therefore, the current control means 113 controls the current of the peak amplifier (amplifier element 1 ib) so that the current value of the peak current Ip is not more than a desired value. To prevent distortion degradation.
  • the current control means 113 causes the carrier amplifier (amplifying element 11 la) to And control the current of the peak amplifier (amplifier element 11 lb) to prevent distortion degradation by setting Ids to a desired value or more.
  • the current control means 113 controls the current of the carrier amplifier (amplifying element 11 la). By increasing the carrier current Ic, Ids is set to a desired value or more to prevent distortion degradation.
  • FIG. 8 is a second block diagram in which the single-configuration power amplifier according to Embodiment 2 of the present invention is used in a two-stage balance configuration.
  • the configuration of the power amplifier in FIG. 8 is basically the same as that of the power amplifier in FIG. 6, but the amplification element 111a and the amplification element 111b have a two-stage non-lance configuration.
  • the second configuration of the second embodiment shown in FIG. 8 is different from the first configuration of the second embodiment shown in FIG. 7, and the VSWR detecting means 112 is provided on the output side of the amplifying element 111a. It has been.
  • the VSWR detection means 112 detects the VSWR value due to load fluctuation on the output side of the amplification element 11 la and transmits the VSWR value to the current control means 113.
  • the current control means 113 performs current control of the amplifying element 11 la and the amplifying element 11 lb based on the VSW R value in which the output side force of the amplifying element 11 la is also detected.
  • the currents flowing through the amplifying element 11 la and the amplifying element 11 lb are almost the same, based on the VSWR value detected from the output side of the amplifying element 11 la! /,
  • the two amplifying elements 11 la Even if the current control of 111b is performed, the current of amplifier 11 la and the current of amplifier 11 lb are balanced. I can do it.
  • the reflection coefficient detecting means 112 may be used instead of the VSWR detecting means 112.
  • the current control method by the current control means 113 is the same as that in FIG.
  • the two-stage single configuration shown in FIG. 8 may be a Dono and Tee amplifier, but the circuit in that case may be configured as shown in FIG.
  • the present invention can be realized even if a single-configuration power amplifier has a balanced configuration of three or more stages.
  • FIG. 9 is a third block diagram in which the single-configuration power amplifier according to Embodiment 2 of the present invention is used in a two-stage balance configuration.
  • the difference between the third configuration of the second embodiment shown in FIG. 9 and the second configuration of the second embodiment shown in FIG. 8 is that the VSWR detection means 112 force amplifying element is not connected to the output side of the amplifying element 111a. It is only a point provided on the output side of 111b. Therefore, the detection operation of the VSWR value due to the load change is performed by the VSWR detection means 112 by the same method as in FIG.
  • the current control method by the current control means 113 is also the same as that described in the second part of the second embodiment in FIG.
  • FIG. 10 is a block diagram showing a first configuration of the VSWR detection means 112 according to Embodiment 3 of the present invention.
  • the VSWR detection means 112 may be replaced with the reflection coefficient detection means 112, but in the following description, the configuration of the VSWR detection means 112 will be described.
  • the input / output terminals r, s, t of the VSWR detection means 112 in the third embodiment correspond to the input / output terminals r, s, t of the VSWR detection means 112 in the power amplifier shown in FIG.
  • the TPC setting level terminal u shown in FIG. 10 may or may not be provided, it is indicated by the VSWR detection means 112 in FIG.
  • the VSWR detection means 112 includes an output level detection unit 121, and the output level detection unit 121 is an amplifying element output side terminal! : Connected to load side terminal s, VSWR detection terminal t, and TPC setting level terminal u.
  • the TPC setting level terminal u is TPC (Transmit Power Control) information indicating the power information that is actually desired to be output. This terminal is used to input the information setting level.
  • the detection of the output power level of the amplifier element output side terminal r can be performed by, for example, a combination of a directional coupler and a detector. That is, a minute power (for example, lZioo power) out of the power output from the amplifying element by the directional coupler is extracted.
  • a minute power for example, lZioo power
  • the micro power signal is received by the detector and the output power level is measured.
  • FIG. 11 is a block diagram showing the second configuration of the VSWR detection means 112 according to Embodiment 3 of the present invention.
  • the VSWR detection means 112 includes a reflection level detection unit 122.
  • the reflection level detection unit 122 is amplifying element output side terminal!:, Load side terminal s, VSWR detection terminal t, and TPC setting level. Connected to terminal u.
  • the reflection level can be predicted from the TPC setting level input from the TPC setting level terminal u to the reflection level detection unit 122 and the reflected power level input to the load side terminal s. Then, the VSWR detection terminal beam VSWR value is detected based on the TPC setting level of the TPC setting level terminal u and the reflected power level of the load side terminal s.
  • the reflected power level of the load side terminal s can be detected by a combination of a directional coupler and a detector, for example.
  • FIG. 12 is a block diagram showing a third configuration of the VSWR detection means 112 according to Embodiment 3 of the present invention.
  • the VSWR detection means 112 includes an incident / reflection level detection unit 123.
  • the incident / reflection level detection unit 123 is connected to the output terminal of the amplification element!:, The load side terminal s, and the VSWR detection terminal t. It is connected.
  • the amplification element By detecting the output power level of the child output side terminal r (that is, equivalent to the incident wave power level) and the reflected wave power level of the load side terminal s and calculating the detection result (that is, incident wave power level force reflection) By dividing the wave power level), the VS WR value is detected from the VSWR detection pin t.
  • the TPC setting level is not required.
  • the detection of the output power level at the amplifier output terminal r (corresponding to the incident wave power level) and the reflected wave power level at the load terminal s is performed by a combination of a directional coupler and a detector. be able to.
  • FIG. 13 is a block diagram showing a configuration of current control means for controlling the power supply of the amplifying element in the fourth embodiment of the present invention.
  • the current control unit 113 includes a current value detection unit 131 and a power supply setting unit 132.
  • the current value detector 131 detects the output current of the amplifying element 111.
  • the power setting unit 132 determines the voltage of the power supply E 101 of the amplifier 111. To control.
  • power supply setting section 132 controls the voltage of power supply E101 based on current detection information from current value detection section 131 and a VSWR value from a VSWR detection means (not shown). By doing so, the output current of the amplifying element 111 is substantially controlled. Instead of the VSWR value, a reflection coefficient having a reflection coefficient detecting means (not shown) may be used. Also, the amplification element controlled by the current control means 113 may be two or more stages in a single configuration! / Or a Doherty amplifier.
  • FIG. 14 is a block diagram showing a configuration of current control means for performing bias voltage control of the amplification element in the fourth embodiment of the present invention.
  • the current control unit 113 includes a current value detection unit 131 and a bias setting unit 133.
  • the noise setting unit 133 is based on the output current of the amplifying element 111 detected by the current value detecting unit 131 and the VSWR value of the VSWR detecting means (not shown)! Controls the voltage of lb.
  • the current control means 113 In such a configuration of the current control means 113, current detection from the current value detection unit 131 is performed. By controlling the bias setting unit 133 based on the information and the VSWR value from the VSWR detection means (not shown), the bias setting unit 133 changes the voltage of the bias power supply E 101b of the amplifying element 111. Thereby, the output current of the amplifying element 111 is substantially controlled. Note that a reflection coefficient from a reflection coefficient detecting means (not shown) may be used instead of the VSWR value.
  • the amplification element controlled by the current control means 113 may be a single configuration of two or more stages! /, And a Dono or Tee amplifier! /.
  • FIG. 15 is a block diagram showing a configuration of current control means for controlling the current source of the amplifying element in the fourth embodiment of the present invention.
  • the current control unit 113 includes a current value detection unit 131 and a current source setting unit 134.
  • the current source setting unit 134 is based on the output current of the amplifying element 111 detected by the current value detecting unit 131 and the VSWR value input from the VSWR detecting means (not shown)! /, And from the current source A101 to the amplifying element 111.
  • the current source setting unit 134 uses the current source V based on the current detection information from the current value detection unit 131 and the VSWR value from the VSWR detection unit (not shown). By controlling the current flowing from A101 to the amplifying element 111, the current of the amplifying element 111 is substantially controlled. In place of the VSWR value, a reflection coefficient from a reflection coefficient detection means (not shown) may be used. In addition, the amplification element controlled by the current control means 113 may be a single configuration of two or more stages, or a Dono or Tee amplifier! /.
  • FIG. 16 is a block diagram showing a configuration of current control means 113 that controls the matching circuit of the output stage of the amplification element in the fourth embodiment of the present invention.
  • the current control unit 113 includes a current value detection unit 131 and a matching network control unit 135. Based on the current detection information from the current value detection unit 131 and the VSWR value input from the VSWR detection means (not shown), the matching network control unit 135 matches a matching circuit (not shown) at the output stage of the amplification element 111. Change the matching network.
  • the matching network control unit 135 is not illustrated based on the current detection information from the current value detection unit 131 and the VSWR value input by the VSWR detection unit force (not illustrated).
  • the current of the amplifying element 111 is substantially controlled by changing the matching network of the matching circuit. That is, the matching network control unit 135 sets the impedance of the antenna (not shown) on the output side of the amplification element 111. For example, a matching circuit (not shown) is switched so as to match. In place of the VSWR value, a reflection coefficient having a reflection coefficient detecting means power (not shown) may be used.
  • the amplifying element can be two or more stages in a single configuration, or it can be a dono or tee amplifier! /.
  • FIG. 17 is a block diagram showing a configuration of current control means for performing variable phase control in Embodiment 4 of the present invention.
  • the current control unit 113 includes a current value detection unit 131 and a variable phase shifter control unit 136. Based on the current detection information from the current value detection unit 131 and the VSWR value that is also input with the VSWR detection means force (not shown), the variable phase shifter control unit 136 sets the amplification element 111 so that the reflection coefficient is minimized. Shift the output phase.
  • variable phase shifter control unit 136 is provided at the output stage of the amplifying element 111, and the variable phase shifter control unit 136 includes a current from the current value detection unit 131.
  • the current of the amplifying element 111 is substantially controlled by changing the phase based on the detection information and the VSWR value (not shown) based on the input VSWR value.
  • a reflection coefficient having a reflection coefficient detecting means power may be used.
  • the amplifier element can be a single stage with two or more stages, or it can be a dono or tee amplifier! /.
  • FIG. 18 is a block diagram showing a configuration of current control means for controlling the distribution ratio of the current of the amplifying element in the fourth embodiment of the present invention.
  • the current control means 113 is configured to include current value detection units 131 a and 13 lb and a distribution ratio control unit 137.
  • the distribution ratio control unit 137 is based on the current detection information from the current value detection units 131a and 131b and the VSWR value that is also input with the VSWR detection means force (not shown)! Distribute the current value of element 11 lb appropriately.
  • the current value detection unit 131a detects the current value of the amplification element 11la
  • the current value detection unit 131b detects the current value of the amplification element 11lb.
  • the distribution ratio control unit 137 calculates the distribution ratio between the current value of the amplification element 11 la and the current value of the amplification element 11 lb.
  • the current of each amplifying element 111a, 111b can be appropriately controlled by changing the current distribution ratio (or absolute distribution amount) of the input stage. it can.
  • the reflection coefficient (not shown) is used instead of the VSWR value.
  • the reflection coefficient from the detection means may be used.
  • the amplification element may be a Doherty amplifier Industrial applicability
  • the power amplifier according to the present invention can prevent deterioration of output power level and distortion caused by load fluctuations with a simple circuit configuration, so that it can be effectively used for mobile phones having severe antenna directivity conditions. It becomes possible to do.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Amplifiers (AREA)

Abstract

La présente invention concerne un amplificateur de puissance utilisant un agencement de circuit simple pour empêcher que le niveau de la puissance de sortie et la distorsion ne se dégradent en raison de la variation d'une charge. Dans cet amplificateur de puissance, si l'impédance d'une antenne (114) varie, des moyens de détermination de rapport de tensions des ondes stationnaires (VSWR) (112) déterminent une valeur de VSWR de l'étage de sortie d'un élément amplificateur (111). Lorsque la valeur de VSWR déterminée par les moyens de détermination de VSWR (112) est basse, on peut estimer que l'impédance adaptée est proche de 50 ohms, de sorte qu'on peut déterminer que le niveau de la puissance de sortie est stable et que le niveau de distorsion satisfait à une valeur permissible, avec pour résultat que des moyens de régulation de courant (113) n'effectuent aucune régulation de courant de l'élément amplificateur (111). Lorsque la valeur de VSWR déterminée par les moyens de détermination de VSWR (112) est élevée, il est possible d'estimer que le niveau de la puissance de sortie et la distorsion se dégradent pour une valeur de courant basse de l'élément amplificateur (111), de telle sorte que les moyens de régulation de courant (113) effectuent une régulation de courant de manière à ce que le courant de l'élément amplificateur (111) devienne important.
PCT/JP2006/321425 2006-10-26 2006-10-26 Amplificateur de puissance WO2008050440A1 (fr)

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PCT/JP2006/321425 WO2008050440A1 (fr) 2006-10-26 2006-10-26 Amplificateur de puissance

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013093701A (ja) * 2011-10-25 2013-05-16 Japan Radio Co Ltd 電力制御装置
JP2016213603A (ja) * 2015-05-01 2016-12-15 富士通株式会社 無線通信装置
US20200044612A1 (en) * 2018-07-31 2020-02-06 Advanced Micro Devices, Inc. Transmitter dynamic rf power control via vswr detection for wireless radios
JP2021037158A (ja) * 2019-09-04 2021-03-11 キヤノンメディカルシステムズ株式会社 高周波増幅装置および磁気共鳴イメージング装置
WO2023199883A1 (fr) * 2022-04-12 2023-10-19 株式会社村田製作所 Module d'amplification de puissance

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003338714A (ja) * 2002-05-21 2003-11-28 Mitsubishi Electric Corp 増幅装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003338714A (ja) * 2002-05-21 2003-11-28 Mitsubishi Electric Corp 増幅装置

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013093701A (ja) * 2011-10-25 2013-05-16 Japan Radio Co Ltd 電力制御装置
JP2016213603A (ja) * 2015-05-01 2016-12-15 富士通株式会社 無線通信装置
US20200044612A1 (en) * 2018-07-31 2020-02-06 Advanced Micro Devices, Inc. Transmitter dynamic rf power control via vswr detection for wireless radios
JP2021037158A (ja) * 2019-09-04 2021-03-11 キヤノンメディカルシステムズ株式会社 高周波増幅装置および磁気共鳴イメージング装置
JP7237779B2 (ja) 2019-09-04 2023-03-13 キヤノンメディカルシステムズ株式会社 高周波増幅装置および磁気共鳴イメージング装置
WO2023199883A1 (fr) * 2022-04-12 2023-10-19 株式会社村田製作所 Module d'amplification de puissance

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