WO2008047541A1 - Appareil d'application en revêtement de film et procédé d'application en revêtement de film - Google Patents

Appareil d'application en revêtement de film et procédé d'application en revêtement de film Download PDF

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Publication number
WO2008047541A1
WO2008047541A1 PCT/JP2007/068757 JP2007068757W WO2008047541A1 WO 2008047541 A1 WO2008047541 A1 WO 2008047541A1 JP 2007068757 W JP2007068757 W JP 2007068757W WO 2008047541 A1 WO2008047541 A1 WO 2008047541A1
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WO
WIPO (PCT)
Prior art keywords
film
film coating
resist
coating apparatus
coating
Prior art date
Application number
PCT/JP2007/068757
Other languages
English (en)
Japanese (ja)
Inventor
Tadahiro Ohmi
Ryoichi Ohkura
Osamu Nakamura
Takaaki Matsuoka
Original Assignee
National University Corporation Tohoku University
Tokyo Electron Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National University Corporation Tohoku University, Tokyo Electron Limited filed Critical National University Corporation Tohoku University
Publication of WO2008047541A1 publication Critical patent/WO2008047541A1/fr

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/26—Apparatus or processes specially adapted for the manufacture of record carriers
    • G11B7/266—Sputtering or spin-coating layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/842—Coating a support with a liquid magnetic dispersion
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/002—Processes for applying liquids or other fluent materials the substrate being rotated

Definitions

  • the present invention relates to an apparatus and a method for coating a film on a substrate surface, and in particular, in manufacturing an electronic device such as a semiconductor device or a flat panel display, an organic film such as a photosensitive resin is applied to a semiconductor substrate or a glass substrate.
  • the present invention relates to an apparatus and a method for coating or coating a film such as a recording film, a protective film, and other organic films on a precision substrate such as a magnetic disk or an optical disk.
  • the lithography system includes a resist coater for applying a resist to a substrate, for example, a wafer, an exposure apparatus for patterning a desired shape, and an imaging apparatus.
  • the wafer on which the resist pattern is formed is inserted into an etching apparatus, for example, a reactive ion etching (RIE) apparatus, and etched.
  • RIE reactive ion etching
  • a resist coater will be described as a problem of a conventional film coating apparatus (see JP-A-11 276972 (Patent Document 2)).
  • the resist coater is provided with a resist line for supplying the resist to the nozzle.
  • the resist line includes a resist tank (coating solution container) that stores the photoresist, a resist pump that pumps the resist from the resist tank, a filter that filters the photoresist pumped from the resist pump, an open / close valve, A resist temperature controller for adjusting the temperature of the resist, and is connected to the nozzle through a resist supply pipe.
  • the resist film When a resist film is applied to the wafer surface, the resist is sucked up from the resist tank by a resist pump, discharged from a nozzle through a filter and a photoresist temperature controller, and adsorbed by a spin chuck rotated by a spin motor. Drip onto the wafer. Next, the resist is caused to flow outward by the centrifugal force generated by the rotation of the spin chuck, and a resist film is applied onto the wafer.
  • the resist film is operated to adjust the temperature of the resist by adjusting the temperature of the resist temperature controller in order to make the resist film a uniform film thickness over the entire wafer surface and eliminate variations from wafer to wafer.
  • the temperature controller is operated to maintain the wafer at a predetermined temperature.
  • a tetrafluoroethylene / perfluoroalkyl butyl ether copolymer (PFA) tube polytetra Fluoroethylene (PTFE) tubing is used.
  • PFA perfluoroalkyl butyl ether copolymer
  • PTFE polytetra Fluoroethylene
  • Patent Document 1 Japanese Patent Laid-Open No. 10-261572
  • Patent Document 2 Japanese Patent Laid-Open No. 11 276972
  • the resist stored in the resist tank is mixed with air components and moisture until the atmosphere is saturated, so that generation of bubbles due to the resist in the pipe is avoided. The fact that it can not be found.
  • these tubes have gas permeability such as oxygen, so that the nozzle, the wafer, etc. It was also found that oxygen and other gases that had passed through these tubes were mixed into the resist discharged onto the substrate. Furthermore, it has been found that moisture and oxygen contained in the atmosphere in the coating container are mixed into the resist during ejection from the nozzle onto the substrate.
  • an object of the present invention is to provide a film coating method in which the applied film is free from contamination at the atomic and molecular level such as moisture and oxygen, a film coating apparatus therefor, an electronic device using the same, and a device.
  • Another object of the present invention is to provide a method for manufacturing a data recording disk.
  • a coating container for introducing a substrate to be coated into the substrate and coating the substrate with a film, a coating liquid container for holding a coating liquid, and the coating liquid from the coating liquid container
  • a film coating apparatus including a liquid transport system for transporting to a coating container, a film coating apparatus characterized by having means for suppressing the inclusion of at least one of oxygen and moisture in the coated film is obtained. It is done.
  • the suppression means includes a deaeration device, and the deaeration device is provided upstream of the supply port through which the coating liquid is supplied to the coating liquid container.
  • a film coating apparatus which is installed in at least one of the liquid transport systems.
  • the deaeration device is provided in the liquid transport system.
  • a film coating apparatus characterized by being installed in the front stage of the pump is obtained.
  • the suppression means has an oxygen permeability coefficient of 5 ⁇ 10 6 (pieces / cm 2 Sec Pa) or less.
  • a film coating apparatus including a resin pipe and using the resin pipe in the liquid transport system is obtained.
  • the restraining means includes a double resin pipe, and the inner pipe and the outer pipe of the double resin pipe are connected.
  • a film coating apparatus is obtained, wherein an inert gas or a gas containing a gaseous organic solvent is present in the space between the two, and the double resin pipe is used in the liquid transport system.
  • the suppression unit supplies the gas for controlling the atmosphere so as to prevent oxygen or moisture from being mixed into the atmosphere inside the coating container.
  • a film coating apparatus comprising a means and a gas exhaust means is obtained.
  • the gas is at least one of an inert gas and hydrogen in the film coating apparatus.
  • the suppression means includes at least one concentration of oxygen and moisture (HO) in the coated film. 10p
  • a film coating apparatus characterized by having a pm or less is obtained.
  • the suppressing means sets the concentration of at least one of oxygen and moisture (H 2 O) in the coated film to 1 ppm or less.
  • a characteristic film coating apparatus is obtained.
  • an electronic device manufacturing method including a step of applying a photosensitive resin film to a substrate using the film applying method.
  • a method for producing a data recording disk comprising the step of applying a recording film or a protective film to a disk substrate using the film coating method.
  • the means for suppressing the inclusion of at least one of oxygen and moisture is provided, the content of oxygen and moisture in the applied film, for example, the resist film is suppressed.
  • resist materials that release moisture and oxygen during the etching process are not damaged.
  • the selection ratio is improved by more than 10 times compared to the conventional method, and the resist coating is thinned to reduce the exposure resolution. It becomes possible to raise.
  • the suppression means suppresses the content of oxygen and moisture in the coating liquid, so that the liquid can be easily managed and uniform coating can be prevented from changing with time. There is also an effect.
  • the coating liquid sent to the transport system is degassed, the generation of bubbles in the transport pipe is eliminated, the occurrence of contamination due to the bubble cavity, the decomposition and dissociation of the coating liquid molecules.
  • the unstable “non-uniform” pulsation of the discharge of the coating liquid during coating can be suppressed.
  • FIG. 1 is a diagram showing an example of the overall configuration of a resist coater according to the present invention.
  • FIG. 2 is a diagram showing a resist line configuration of the resist coater of the present invention.
  • FIG. 3 is a diagram showing a main part of a resist coater.
  • FIG. 1 is a diagram showing an overall configuration of a resist coating apparatus (hereinafter simply referred to as a coater) as an example of a film coating apparatus of the present invention.
  • the coater according to the embodiment of the present invention has a schematic configuration similar to that of the conventional one, but in a liquid supply system such as a resist solution containing a photosensitive resin, a resist solution supply system, and a rinse solution supply system, or in an apparatus, It differs from the conventional coater in that it has a means to suppress the mixing of oxygen and moisture in the coating film.
  • the coater 110 includes a spin chuck 112 that rotates while adsorbing and holding a wafer by vacuum adsorption or electrostatic adsorption, a spin motor 114 that rotates the spin chuck 112, and a coater that covers the spin chuck 112.
  • a cup 116 is provided.
  • the surface edge where the upper surface of the edge (peripheral portion) of the wafer 5 coated with the photoresist film is rinsed with a rinsing liquid.
  • a rinsing nozzle 120 and a back surface rinsing nozzle 122 for rinsing the lower surface of the wafer are provided.
  • a thinner is usually used as the rinse liquid.
  • the front edge rinse nozzle 120 is used to clean and remove the photoresist around the wafer periphery, and the back surface rinse nozzle 22 is used to clean and remove the photoresist adhering to the back surface of the wafer. .
  • the rinsing liquid supply device 132 includes a canister 146 containing a thinner used as a rinsing liquid, and a nitrogen gas attached to the canister 146 for feeding nitrogen gas and pumping the thinner. And an entrance 148. Under such a configuration, nitrogen gas is fed into the canister 146 and the rinse liquid is pumped through the rinse liquid supply pipe 149 and then the rinse liquid supply pipes 154 and 156 having the on-off valves 150 and 152, respectively. Then, the rinse liquid is supplied from the canister 146 to the front edge rinse nozzle 120 and the back surface rinse nozzle 122.
  • the coater 110 accommodates a coater cup 116 including a spin chuck 112, adjusts the temperature thereof, and controls a cup temperature controller 50 that constitutes a chamber that controls the temperature and humidity near the wafer 5. Further, in order to prevent the influence of heat transferred from the spin motor 114, a motor flange temperature controller 159 is provided on the flange of the spin motor 114.
  • the coating container includes the coater cup 116 and the cup temperature controller 50.
  • the rinse liquid supply pipe temperature controller 162 provided in the rinse liquid supply pipe 149 and the cup temperature controller 50 are linked to adjust the set temperature of the rinse liquid supply pipe temperature controller 162, thereby A rinsing liquid temperature control device 164 for controlling the temperature of the rinsing liquid is provided so that the temperature of the nip 116 and the temperature of the rinsing liquid are the same.
  • the coater 110 includes a nozzle 11 for ejecting a photoresist from an upper opening of the coater cup 116, and a resist line 30 for supplying the photoresist to the nozzle 11.
  • the photoresist film is applied onto the wafer 5 using the coater 110, the photoresist film is applied, and after that, the rinse liquid whose temperature is controlled by the rinse liquid supply pipe temperature controller 162 is applied to the surface. From edge rinse nozzle 120 and back surface rinse nozzle 122 to the front edge and back surface of wafer 5 Dispense and wash.
  • a control signal is sent from the rinse liquid temperature controller 164 to link the cup temperature controller 50 and the rinse liquid supply pipe temperature controller 162, while the set temperature of the rinse liquid supply pipe temperature controller 162 is set.
  • the temperature of the rinse liquid is controlled so that the temperature of the coater cup 116 and the temperature of the rinse liquid become the same.
  • the downstream rinsing liquid is expelled from the rinse liquid piping temperature controller 162 in advance by a dummy dispense (empty) immediately before the start of the coating operation. Thereafter, the wafer 5 is rinsed.
  • the resist coating apparatus (coater) 110 is characterized in that it is provided with a suppressing means that prevents oxygen and moisture from entering the coated thin film resist.
  • This suppression means suppresses the entry of moisture and oxygen into the resist coating film from all directions.
  • the coater 110 is configured to apply uniformly at 2.
  • a gas nozzle 51 is provided as a gas supply means for supplying nitrogen gas N into the coater cup 116. Also
  • a gas exhaust pipe 52 connected to an exhaust pump (not shown) as a gas exhaust means is provided below the wafer 5.
  • the coater 110 according to the embodiment of the present invention is also characterized by a resist line 30 that is one of the liquid transport systems.
  • a means for preventing the entry of at least one of oxygen and moisture is a resist line 3.
  • suppression means 0 is also provided. In the following description, this means is simply referred to as suppression means.
  • the raw material tanks 21, 22, 23 connected to the resist line 30, and the thinner supply system are composed of A1-containing austenitic stainless steel (surface Al 2 O 3) system.
  • the inner surface is made of a metal material treated with Al 2 O 3 and Y 2 O. These are resists
  • a PFA / nylon laminated three-layer tube with less gas permeation is used as the plastic tube.
  • the PFA / nylon laminated three-layer tube is also useful for suppressing oxygen and moisture from entering the resist from the atmosphere. Even when such a three-layer tube is used, when the resist flow stops, a large amount of oxygen and nitrogen penetrates the resist if the outside is the atmosphere. To suppress this, double the resist supply tube (the outside is a PFA / nylon three-layer tube or a softened PVDF tube), and slowly flow an organic solvent gas between them (the room temperature of the organic solvent used). (In this case, it is necessary to measure the vapor pressure of organic solvents at room temperature).
  • the resist coater 110 has an N atmosphere at atmospheric pressure, so PFA
  • the content of at least one of oxygen and moisture (H 2 O) in the coated resist film is suppressed to 10 ppm or less, preferably 1 Oppm or less by the suppressing means.
  • FIG. 2 is a schematic diagram of a configuration of the resist line 30 according to the embodiment of the present invention
  • FIG. 3 is a diagram showing a main part of the resist coater.
  • each of the resist lines 30 as a liquid transport system has a unique structure as a suppression means.
  • the resist line 30 shown in FIG. 2 includes a resist discharge device 10, a resist supply container 20 as a coating solution container, and a pipe 25 connecting them.
  • the piping 25 includes a drain valve (PTFE) 31, a flow rate adjusting valve such as a pump (PFA, PTFE) 32, a filter (PTFE) 33, a flow rate adjusting valve in order from the resist supply container 20 side toward the resist ejection device 10.
  • PTFE diaphragm arranged!
  • the resist discharge apparatus 10 includes a triple-layer resist temperature adjustment pipe 12 and a nozzle 11.
  • Three-layer resist temperature adjustment piping 12 is used for temperature adjustment cooling water inflow piping 13 and 23 ° C temperature adjustment piping consisting of polychlorinated bur (PVC) tubes into which cooling water for temperature adjustment at 23 ° C flows.
  • a temperature-controlled cooling water outflow pipe 14 consisting of a PFA tube that discharges the cooling water is provided.
  • the resist supply container 20 includes a stainless steel resist tank 21, a lid 23 for sealing an upper opening of the resist tank 21, and a light shielding glass bottle disposed in the resist tank 21.
  • a resist bottle 22 made of The resist tank 21 is made of A1-containing austenitic stainless steel (surface Al 2 O 3). Raw material tank (not shown)
  • Y 2 O is preferably heat-treated at 1000 ° C.
  • the resist tank 21 is a device that serves as a suppression means.
  • the resist supply pipe 25a has a double structure that prevents permeation of oxygen.
  • the inner side is made of PFA having an outer diameter of 1/4 inch and an inner diameter of 4 ⁇ 8 ⁇ , which is approximately lm, and the outer side is made of PFA / Nylon 3 layer tube or soft vinylidene fluoride (PVDF) tube.
  • PVDF soft vinylidene fluoride
  • the other end of the resist supply pipe 25a is connected to a drain valve 31a provided with a drain pipe 31a for removing moisture.
  • the drain valve 31a is made of PTFE. Drain valve 3 1 and the flow regulating valve 32 are connected by a pipe 25b.
  • the resist supply pipe 25b has a double structure that does not transmit oxygen, and the inner side is made of PFA having an outer diameter of 1/4 inch and an inner diameter of 4.8 ⁇ ⁇ and a length of approximately lm. On the outside, PFA / nylon 3 layer tube or soft PVDF tube. In this two-layer structure, the organic solvent gas is slowly flown as described above.
  • the flow regulating valve (registration pump) 32 is composed of PFA and PTFA!
  • the filter 33 and the flow rate adjusting valve 34 are connected to the pipe 25d by!
  • Filter 33 is made of PTFE.
  • the resist supply pipes 25c and 25d have a double structure, and the inner side is a PFA having an outer diameter of 1/4 inch and an inner diameter of 4.8 ⁇ and a length of approximately lm.
  • the inner side is a PFA having an outer diameter of 1/4 inch and an inner diameter of 4.8 ⁇ and a length of approximately lm.
  • the flow rate adjusting valve 34 and the resist temperature controller 12 are connected by a pipe 25e.
  • the flow rate adjustment valve 34 is made of a PTFE diaphragm.
  • the resist supply pipe 25e is the same as the resist supply pipes 25a and 25b.
  • the oxygen transmission coefficient is 5 X 10 6 (pieces / cm 2 SeC Pa) or less, It constitutes a suppression means.
  • the volume of the pipe is 79.4 cm 3 .
  • the resist temperature controller 12 is a PTFE tube having an outer diameter of 4 mm, an inner diameter of 3 mm, and a length of 0.5 m, and a polychlorinated bur (PVC) -based temperature controller formed on the outside thereof. It consists of a cooling water supply tube 13 and a PFA temperature-controlled cooling water discharge tube 14 formed on the outside of the tube, and between the PTFE tube and the temperature-controlled cooling water supply tube 13. Temperature-controlled cooling water is poured.
  • PVC polychlorinated bur
  • the main part of the resist coater 110 is configured to spray resist onto the cup temperature controller 50 that forms a chamber inside and the wafer 5 installed in the cup temperature controller 50.
  • the resist discharge device 10 provided with the nozzle 11 and an inert gas in the cup temperature controller 50 Gas supply pipe (gas nozzle) 51, which forms the gas supply means for supplying N gas, and the chamber
  • a gas exhaust pipe 52 serving as a gas exhaust means for exhausting the gas in the chamber.
  • the cup temperature controller 50 is made of austenitic stainless steel containing A1 or made of high-purity A1 / Mg / Zn, and Al O is formed on the surface by anodization.
  • the resist discharge apparatus 10 is provided with a deaeration film 33 in front of the pumps 32 and 34 as a suppression means for preventing oxygen from being mixed. Further, the resist supply pipe 25 of the resist discharge apparatus 10 uses a material having a low permeation gas coefficient as in the example of FIG.
  • the gas supply pipe 51 serving as the gas supply means and the gas exhaust pipe 52 serving as the gas exhaust means are each composed of a PFA / nylon three-layer tube. .
  • the atmosphere in the chamber is maintained at atmospheric pressure and in the atmosphere.
  • the concentration of oxygen and moisture is reduced to prevent oxygen and moisture from entering the resist coating film from the atmosphere.
  • the film coating apparatus includes a coating container for introducing a substrate to be coated into the substrate and coating the substrate, a coating liquid container for holding a coating liquid, and the coating liquid container from the coating liquid container.
  • a structure including a liquid transport system for transporting the coating liquid to the coating container is used as a basic structure, and further, the coating film to be formed, for example, the content of at least one of oxygen and moisture in the photoresist is suppressed. Means are provided.
  • the suppression means includes a deaeration device that performs deaeration in the coating solution by passing nitrogen, and the degassing device is provided upstream of the supply port to which the coating solution is supplied to the coating solution container.
  • the degassing device may be installed in the liquid transport system.
  • this deaeration device is connected to the liquid transport system. More preferably, it is installed in front of the amplifier.
  • the suppression means as the resin piping used in the liquid transport system, one having an oxygen permeability coefficient of 5 ⁇ 10 6 [pieces / cm 2 secPa] or less may be used.
  • a double resin pipe is included, and a gas containing an inert gas or a gaseous organic solvent is present in a space between the inner pipe and the outer pipe of the double resin pipe, and oxygen
  • the double resin pipe may be used in the liquid transport system.
  • the suppression means may include a gas supply means and a gas exhaust means for controlling the atmosphere so as to prevent oxygen or moisture from being mixed into the internal atmosphere of the coating container. More preferably, this gas is at least one of an inert gas and hydrogen.
  • suppression means includes oxygen and moisture (H 2 O) in the applied film.
  • a concentration of at least one of 2 is preferably 1 ppm or less, more preferably 1 ppm or less.
  • the film coating method of the present invention is a method of performing film coating using a film coating apparatus provided with the above-described suppressing means.
  • the method for manufacturing an electronic device of the present invention includes a step of applying a photosensitive resin film to a substrate using this film application method.
  • the data recording disk manufacturing method of the present invention includes a step of applying a recording film or a protective film as a coating film to the disk substrate using this film coating method.
  • the coating solution may be polyimide or an SOG or SOD material for forming an interlayer insulating film.
  • the film coating apparatus of the present invention is applied to the manufacture of ultra-precise equipment and parts such as resist coating on a semiconductor wafer.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Coating Apparatus (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)

Abstract

L'invention concerne un appareil d'application en revêtement de film qui comporte un conteneur de revêtement, dans lequel on introduit un substrat devant être revêtu et dans lequel le substrat est revêtu d'un film ; un conteneur de solution de revêtement destiné à stocker une solution de revêtement ; et un système de transport de liquide pour transporter la solution de revêtement vers le conteneur de revêtement à partir du conteneur de solution de revêtement. L'appareil de revêtement de film comporte également des moyens pour supprimer un contenu, au moins l'oxygène ou l'eau, dans le film appliqué.
PCT/JP2007/068757 2006-09-29 2007-09-27 Appareil d'application en revêtement de film et procédé d'application en revêtement de film WO2008047541A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006-266569 2006-09-29
JP2006266569A JP5257915B2 (ja) 2006-09-29 2006-09-29 膜塗布装置および膜塗布方法

Publications (1)

Publication Number Publication Date
WO2008047541A1 true WO2008047541A1 (fr) 2008-04-24

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JP (1) JP5257915B2 (fr)
TW (1) TWI367130B (fr)
WO (1) WO2008047541A1 (fr)

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US9272095B2 (en) 2011-04-01 2016-03-01 Sio2 Medical Products, Inc. Vessels, contact surfaces, and coating and inspection apparatus and methods
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US9545360B2 (en) 2009-05-13 2017-01-17 Sio2 Medical Products, Inc. Saccharide protective coating for pharmaceutical package
US9554968B2 (en) 2013-03-11 2017-01-31 Sio2 Medical Products, Inc. Trilayer coated pharmaceutical packaging
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US9764093B2 (en) 2012-11-30 2017-09-19 Sio2 Medical Products, Inc. Controlling the uniformity of PECVD deposition
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US9903782B2 (en) 2012-11-16 2018-02-27 Sio2 Medical Products, Inc. Method and apparatus for detecting rapid barrier coating integrity characteristics
US9937099B2 (en) 2013-03-11 2018-04-10 Sio2 Medical Products, Inc. Trilayer coated pharmaceutical packaging with low oxygen transmission rate
US10189603B2 (en) 2011-11-11 2019-01-29 Sio2 Medical Products, Inc. Passivation, pH protective or lubricity coating for pharmaceutical package, coating process and apparatus
US10201660B2 (en) 2012-11-30 2019-02-12 Sio2 Medical Products, Inc. Controlling the uniformity of PECVD deposition on medical syringes, cartridges, and the like
JP2020155735A (ja) * 2019-03-22 2020-09-24 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置、および、基板処理方法
US11066745B2 (en) 2014-03-28 2021-07-20 Sio2 Medical Products, Inc. Antistatic coatings for plastic vessels
US11077233B2 (en) 2015-08-18 2021-08-03 Sio2 Medical Products, Inc. Pharmaceutical and other packaging with low oxygen transmission rate
US11116695B2 (en) 2011-11-11 2021-09-14 Sio2 Medical Products, Inc. Blood sample collection tube
US11624115B2 (en) 2010-05-12 2023-04-11 Sio2 Medical Products, Inc. Syringe with PECVD lubrication

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JP5501916B2 (ja) * 2010-09-27 2014-05-28 東レエンジニアリング株式会社 基板処理システム
DE202010015018U1 (de) * 2010-11-07 2011-04-14 Bohnet, Hans Anordnung zur Herstellung von strukturierten Substraten
JP2020068323A (ja) * 2018-10-25 2020-04-30 株式会社ディスコ 保護膜被覆装置
JP7365220B2 (ja) 2019-12-12 2023-10-19 東京エレクトロン株式会社 液処理装置及び処理液の温度調整方法
JP7441666B2 (ja) * 2020-02-10 2024-03-01 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP7378345B2 (ja) * 2020-04-24 2023-11-13 東京エレクトロン株式会社 二重配管の内部洗浄方法及び処理液供給装置

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