WO2008047541A1

WO2008047541A1 - Film coating apparatus and film coating method

Info

Publication number: WO2008047541A1
Application number: PCT/JP2007/068757
Authority: WO
Inventors: Tadahiro Ohmi; Ryoichi Ohkura; Osamu Nakamura; Takaaki Matsuoka
Original assignee: National University Corporation Tohoku University; Tokyo Electron Limited
Priority date: 2006-09-29
Filing date: 2007-09-27
Publication date: 2008-04-24
Also published as: JP2008085263A; TW200846081A; JP5257915B2; TWI367130B

Abstract

A film coating apparatus is provided with a coating container, which introduces inside a substrate to be coated and coats the substrate with a film; a coating solution container for storing a coating solution; and a liquid transporting system for transporting the coating solution to the coating container from the coating solution container. The film coating apparatus is also provided with a means for suppressing content of at least oxygen or water in the applied film.

Description

Specification

Film coating apparatus and film coating method

Technical field

TECHNICAL FIELD [0001] The present invention relates to an apparatus and a method for coating a film on a substrate surface, and in particular, in manufacturing an electronic device such as a semiconductor device or a flat panel display, an organic film such as a photosensitive resin is applied to a semiconductor substrate or a glass substrate. The present invention relates to an apparatus and a method for coating or coating a film such as a recording film, a protective film, and other organic films on a precision substrate such as a magnetic disk or an optical disk.

Background art

[0002] In the manufacture of semiconductor devices, liquid crystal displays, magnetic disks, etc., an exposure technique is used to form a circuit pattern.

In order to carry out this exposure technique, a lithography system is used (Japanese Patent Application Laid-Open No. Hei 10).

No. 261572 (see Patent Document 1). The lithography system includes a resist coater for applying a resist to a substrate, for example, a wafer, an exposure apparatus for patterning a desired shape, and an imaging apparatus. The wafer on which the resist pattern is formed is inserted into an etching apparatus, for example, a reactive ion etching (RIE) apparatus, and etched.

[0004] Here, applying a resist material (photosensitive resin) essential for the exposure process uniformly and as thinly as possible to a precision substrate is not only for forming fine elements on the substrate, This is an indispensable and important matter for manufacturing semiconductors and other devices with high quality and high yield. Therefore, conventionally, the resist coater, that is, the coating apparatus has been improved in order to uniformly and thinly apply the resist material on the precise substrate in the exposure process.

[0005] Furthermore, with the high integration and high precision of various devices such as semiconductors, the pollution factors in question are becoming more severe. In addition to heavy metal contamination, particle contamination from the environment and Contamination is also a problem and needs to be improved.

[0006] Specifically, for example, a resist coater will be described as a problem of a conventional film coating apparatus (see JP-A-11 276972 (Patent Document 2)). Shown in Patent Document 2 The resist coater is provided with a resist line for supplying the resist to the nozzle. The resist line includes a resist tank (coating solution container) that stores the photoresist, a resist pump that pumps the resist from the resist tank, a filter that filters the photoresist pumped from the resist pump, an open / close valve, A resist temperature controller for adjusting the temperature of the resist, and is connected to the nozzle through a resist supply pipe.

[0007] When a resist film is applied to the wafer surface, the resist is sucked up from the resist tank by a resist pump, discharged from a nozzle through a filter and a photoresist temperature controller, and adsorbed by a spin chuck rotated by a spin motor. Drip onto the wafer. Next, the resist is caused to flow outward by the centrifugal force generated by the rotation of the spin chuck, and a resist film is applied onto the wafer. During the application of the resist film, the resist film is operated to adjust the temperature of the resist by adjusting the temperature of the resist temperature controller in order to make the resist film a uniform film thickness over the entire wafer surface and eliminate variations from wafer to wafer. The temperature controller is operated to maintain the wafer at a predetermined temperature.

[0008] In addition, as a piping for transporting the resist from the resist tank to the nozzle of the coating container for actually applying the resist, a tetrafluoroethylene / perfluoroalkyl butyl ether copolymer (PFA) tube, polytetra Fluoroethylene (PTFE) tubing is used. As an example of an actual resist coater, a 4m PFA tube and an lm PTFE tube are used between the resist tank forming the resist line and the nozzle, and the resist always passes through these tubes. .

Patent Document 1: Japanese Patent Laid-Open No. 10-261572

Patent Document 2: Japanese Patent Laid-Open No. 11 276972

Disclosure of the invention

Problems to be solved by the invention

According to the study by the present inventors, the resist stored in the resist tank is mixed with air components and moisture until the atmosphere is saturated, so that generation of bubbles due to the resist in the pipe is avoided. The fact that it can not be found.

[0011] When a PFA tube or PTFE tube is used as a pipe for transporting the resist, these tubes have gas permeability such as oxygen, so that the nozzle, the wafer, etc. It was also found that oxygen and other gases that had passed through these tubes were mixed into the resist discharged onto the substrate. Furthermore, it has been found that moisture and oxygen contained in the atmosphere in the coating container are mixed into the resist during ejection from the nozzle onto the substrate.

[0012] When moisture is mixed into the resist, in reactive ion etching (RIE), which is an etching process after the exposure process, moisture plasma is generated in the chamber, or dust is generated through this moisture, and the interior It adheres to the wafer etc. and causes the yield to deteriorate. In addition, since moisture and oxygen contained in the resist are released and damage the resist material, the improvement of the selection ratio is hindered, making it difficult to apply the resist material as thin as possible. There is also a problem.

[0013] Further, when water or oxygen is contained in a coating solution such as a resist, a change with time is caused, so that the management of the coating solution is difficult, and there is a problem that uniform coating becomes difficult.

Yes

[0014] However, in conventional apparatuses such as a film coating apparatus, mixing of water and oxygen from the resist and its supply line is not considered as a problem. As a result, moisture and oxygen in the resist and its supply line are not problematic. No consideration has been given to the suppression of contamination.

[0015] Therefore, an object of the present invention is to provide a film coating method in which the applied film is free from contamination at the atomic and molecular level such as moisture and oxygen, a film coating apparatus therefor, an electronic device using the same, and a device. Another object of the present invention is to provide a method for manufacturing a data recording disk.

Means for solving the problem

[0016] According to the present invention, a coating container for introducing a substrate to be coated into the substrate and coating the substrate with a film, a coating liquid container for holding a coating liquid, and the coating liquid from the coating liquid container In a film coating apparatus including a liquid transport system for transporting to a coating container, a film coating apparatus characterized by having means for suppressing the inclusion of at least one of oxygen and moisture in the coated film is obtained. It is done.

[0017] According to the present invention, in the film coating apparatus, the suppression means includes a deaeration device, and the deaeration device is provided upstream of the supply port through which the coating liquid is supplied to the coating liquid container. And a film coating apparatus which is installed in at least one of the liquid transport systems.

[0018] According to the present invention, in the film coating apparatus, the deaeration device is provided in the liquid transport system. A film coating apparatus characterized by being installed in the front stage of the pump is obtained.

[0019] According to the present invention, in the! /, Any of the film coating apparatuses, the suppression means has an oxygen permeability coefficient of 5 × 10 ⁶ (pieces / cm ² _Sec Pa) or less. A film coating apparatus including a resin pipe and using the resin pipe in the liquid transport system is obtained.

[0020] According to the present invention, in the! /, Any of the film coating apparatuses, the restraining means includes a double resin pipe, and the inner pipe and the outer pipe of the double resin pipe are connected. A film coating apparatus is obtained, wherein an inert gas or a gas containing a gaseous organic solvent is present in the space between the two, and the double resin pipe is used in the liquid transport system.

[0021] According to the present invention, in the film coating apparatus according to any one of the above-described items, the suppression unit supplies the gas for controlling the atmosphere so as to prevent oxygen or moisture from being mixed into the atmosphere inside the coating container. A film coating apparatus comprising a means and a gas exhaust means is obtained.

According to the present invention, there is obtained a film coating apparatus characterized in that the gas is at least one of an inert gas and hydrogen in the film coating apparatus.

[0023] According to the present invention, in the! /, One of the film coating apparatuses, the suppression means includes at least one concentration of oxygen and moisture (HO) in the coated film. 10p

2

A film coating apparatus characterized by having a pm or less is obtained.

[0024] According to the present invention, in the film coating apparatus, the suppressing means sets the concentration of at least one of oxygen and moisture (H 2 O) in the coated film to 1 ppm or less.

2

A characteristic film coating apparatus is obtained.

[0025] According to the present invention, there is obtained a film coating method characterized in that film coating is performed by using the above-described film coating apparatus.

[0026] According to the present invention, there is obtained an electronic device manufacturing method including a step of applying a photosensitive resin film to a substrate using the film applying method.

[0027] According to the present invention, there is provided a method for producing a data recording disk, comprising the step of applying a recording film or a protective film to a disk substrate using the film coating method. [0028] According to the present invention, since the means for suppressing the inclusion of at least one of oxygen and moisture is provided, the content of oxygen and moisture in the applied film, for example, the resist film is suppressed. In addition, resist materials that release moisture and oxygen during the etching process are not damaged. Furthermore, when the resist material is not damaged and there is no moisture release from the wall of the structural material, the selection ratio is improved by more than 10 times compared to the conventional method, and the resist coating is thinned to reduce the exposure resolution. It becomes possible to raise.

[0029] Further, according to the present invention, the suppression means suppresses the content of oxygen and moisture in the coating liquid, so that the liquid can be easily managed and uniform coating can be prevented from changing with time. There is also an effect.

[0030] Further, according to the present invention, since the coating liquid sent to the transport system is degassed, the generation of bubbles in the transport pipe is eliminated, the occurrence of contamination due to the bubble cavity, the decomposition and dissociation of the coating liquid molecules. In addition, the unstable “non-uniform” pulsation of the discharge of the coating liquid during coating can be suppressed.

Brief Description of Drawings

FIG. 1 is a diagram showing an example of the overall configuration of a resist coater according to the present invention.

FIG. 2 is a diagram showing a resist line configuration of the resist coater of the present invention.

[FIG. 3] FIG. 3 is a diagram showing a main part of a resist coater.

BEST MODE FOR CARRYING OUT THE INVENTION

Embodiments of the present invention will be described with reference to the drawings.

FIG. 1 is a diagram showing an overall configuration of a resist coating apparatus (hereinafter simply referred to as a coater) as an example of a film coating apparatus of the present invention. The coater according to the embodiment of the present invention has a schematic configuration similar to that of the conventional one, but in a liquid supply system such as a resist solution containing a photosensitive resin, a resist solution supply system, and a rinse solution supply system, or in an apparatus, It differs from the conventional coater in that it has a means to suppress the mixing of oxygen and moisture in the coating film.

That is, referring to FIG. 1, the coater 110 includes a spin chuck 112 that rotates while adsorbing and holding a wafer by vacuum adsorption or electrostatic adsorption, a spin motor 114 that rotates the spin chuck 112, and a coater that covers the spin chuck 112. A cup 116 is provided. In addition, the surface edge where the upper surface of the edge (peripheral portion) of the wafer 5 coated with the photoresist film is rinsed with a rinsing liquid. A rinsing nozzle 120 and a back surface rinsing nozzle 122 for rinsing the lower surface of the wafer are provided.

[0035] A thinner is usually used as the rinse liquid. The front edge rinse nozzle 120 is used to clean and remove the photoresist around the wafer periphery, and the back surface rinse nozzle 22 is used to clean and remove the photoresist adhering to the back surface of the wafer. .

Excess photoresist other than the photoresist formed on the wafer 5 and rinse waste liquid are discharged from the bottom of the coater cup 116 through the waste liquid pipe 124.

[0037] The rinsing liquid supply device 132 includes a canister 146 containing a thinner used as a rinsing liquid, and a nitrogen gas attached to the canister 146 for feeding nitrogen gas and pumping the thinner. And an entrance 148. Under such a configuration, nitrogen gas is fed into the canister 146 and the rinse liquid is pumped through the rinse liquid supply pipe 149 and then the rinse liquid supply pipes 154 and 156 having the on-off valves 150 and 152, respectively. Then, the rinse liquid is supplied from the canister 146 to the front edge rinse nozzle 120 and the back surface rinse nozzle 122.

Further, the coater 110 accommodates a coater cup 116 including a spin chuck 112, adjusts the temperature thereof, and controls a cup temperature controller 50 that constitutes a chamber that controls the temperature and humidity near the wafer 5. Further, in order to prevent the influence of heat transferred from the spin motor 114, a motor flange temperature controller 159 is provided on the flange of the spin motor 114. Here, in the present invention, the coating container includes the coater cup 116 and the cup temperature controller 50.

The rinse liquid supply pipe temperature controller 162 provided in the rinse liquid supply pipe 149 and the cup temperature controller 50 are linked to adjust the set temperature of the rinse liquid supply pipe temperature controller 162, thereby A rinsing liquid temperature control device 164 for controlling the temperature of the rinsing liquid is provided so that the temperature of the nip 116 and the temperature of the rinsing liquid are the same.

Further, the coater 110 includes a nozzle 11 for ejecting a photoresist from an upper opening of the coater cup 116, and a resist line 30 for supplying the photoresist to the nozzle 11.

[0041] When the photoresist film is applied onto the wafer 5 using the coater 110, the photoresist film is applied, and after that, the rinse liquid whose temperature is controlled by the rinse liquid supply pipe temperature controller 162 is applied to the surface. From edge rinse nozzle 120 and back surface rinse nozzle 122 to the front edge and back surface of wafer 5 Dispense and wash.

[0042] In the coater 110, a control signal is sent from the rinse liquid temperature controller 164 to link the cup temperature controller 50 and the rinse liquid supply pipe temperature controller 162, while the set temperature of the rinse liquid supply pipe temperature controller 162 is set. By adjusting the temperature, the temperature of the rinse liquid is controlled so that the temperature of the coater cup 116 and the temperature of the rinse liquid become the same. When resuming after suspending the wafer coating operation, the downstream rinsing liquid is expelled from the rinse liquid piping temperature controller 162 in advance by a dummy dispense (empty) immediately before the start of the coating operation. Thereafter, the wafer 5 is rinsed.

[0043] Further, the resist coating apparatus (coater) 110 according to the embodiment of the present invention is characterized in that it is provided with a suppressing means that prevents oxygen and moisture from entering the coated thin film resist. This suppression means suppresses the entry of moisture and oxygen into the resist coating film from all directions.

[0044] Specifically, in order to prevent moisture and oxygen from entering the atmosphere,

The coater 110 is configured to apply uniformly at 2. For this purpose, a gas nozzle 51 is provided as a gas supply means for supplying nitrogen gas N into the coater cup 116. Also

2

A gas exhaust pipe 52 connected to an exhaust pump (not shown) as a gas exhaust means is provided below the wafer 5.

Furthermore, the coater 110 according to the embodiment of the present invention is also characterized by a resist line 30 that is one of the liquid transport systems.

First, the resist line 30 according to an embodiment of the present invention will be described.

[0047] Here, when the resist is exposed to light or mixed with moisture or oxygen, the resist undergoes a rapid aging. Therefore, light blocking and oxygen moisture blocking are performed. Therefore, in the present invention, a means for preventing the entry of at least one of oxygen and moisture is a resist line 3.

0 is also provided. In the following description, this means is simply referred to as suppression means.

[0048] In addition, if gas components such as oxygen and nitrogen are dissolved to saturation solubility in a resist dissolved in an organic solvent, bubbles are also generated during resist pumping, and in some cases, resist molecules are generated by bubble cavitation. Decomposes and dissociates.

[0049] Therefore, it is first important that bubbles are not generated during resist pressure feeding. For this reason, means for degassing nitrogen and oxygen components dissolved in the resist until atmospheric saturation Provide. It is also possible to provide a suppression means for eliminating the contamination of atmospheric components in the resist as a raw material (it is desirable to have an atmospheric component blocking step from the manufacturing process, but it is also possible to degas the remaining organic solvent at the end. ,).

[0050] Furthermore, it is possible to provide a suppression means for eliminating air (nitrogen, oxygen) from the resist line 30 from the resist tank 21 to the surface coating of the wafer 5.

More specifically, the raw material tanks 21, 22, 23 connected to the resist line 30, and the thinner supply system are composed of A1-containing austenitic stainless steel (surface Al 2 O 3) system.

twenty three

Yes. In the metal plate manufacturing process, Y on the surface of the Y O sol-gel coated raw material tank

2 3 2

O is heat treated at 1000 ° C. At a minimum, the resist line 30 after removing atmospheric components is

Three

As shown below, the inner surface is made of a metal material treated with Al 2 O 3 and Y 2 O. These are resists

2 3 2 3

Used for tank 21, raw material resist supply system, raw material resist supply tank and resist supply tube system.

[0052] When a plastic tube is used for the resist line 30, a PFA / nylon laminated three-layer tube with less gas permeation is used as the plastic tube. The PFA / nylon laminated three-layer tube is also useful for suppressing oxygen and moisture from entering the resist from the atmosphere. Even when such a three-layer tube is used, when the resist flow stops, a large amount of oxygen and nitrogen penetrates the resist if the outside is the atmosphere. To suppress this, double the resist supply tube (the outside is a PFA / nylon three-layer tube or a softened PVDF tube), and slowly flow an organic solvent gas between them (the room temperature of the organic solvent used). (In this case, it is necessary to measure the vapor pressure of organic solvents at room temperature).

[0053] The resist coater 110 has an N atmosphere at atmospheric pressure, so PFA

2

/ Nylon 3 layer tube only.

[0054] By using such a configuration, the content of at least one of oxygen and moisture (H 2 O) in the coated resist film is suppressed to 10 ppm or less, preferably 1 Oppm or less by the suppressing means.

2

It can be suppressed to lppm or more.

FIG. 2 is a schematic diagram of a configuration of the resist line 30 according to the embodiment of the present invention, and FIG. 3 is a diagram showing a main part of the resist coater. [0056] Referring to FIG. 2, each of the resist lines 30 as a liquid transport system has a unique structure as a suppression means.

Specifically, the resist line 30 shown in FIG. 2 includes a resist discharge device 10, a resist supply container 20 as a coating solution container, and a pipe 25 connecting them. The piping 25 includes a drain valve (PTFE) 31, a flow rate adjusting valve such as a pump (PFA, PTFE) 32, a filter (PTFE) 33, a flow rate adjusting valve in order from the resist supply container 20 side toward the resist ejection device 10. (PTFE diaphragm) 34 is arranged!

The resist discharge apparatus 10 includes a triple-layer resist temperature adjustment pipe 12 and a nozzle 11. Three-layer resist temperature adjustment piping 12 is used for temperature adjustment cooling water inflow piping 13 and 23 ° C temperature adjustment piping consisting of polychlorinated bur (PVC) tubes into which cooling water for temperature adjustment at 23 ° C flows. A temperature-controlled cooling water outflow pipe 14 consisting of a PFA tube that discharges the cooling water is provided.

As shown in FIGS. 1 and 2, the resist supply container 20 includes a stainless steel resist tank 21, a lid 23 for sealing an upper opening of the resist tank 21, and a light shielding glass bottle disposed in the resist tank 21. And a resist bottle 22 made of The resist tank 21 is made of A1-containing austenitic stainless steel (surface Al 2 O 3). Raw material tank (not shown)

twenty three

Y 2 O is preferably heat-treated at 1000 ° C.

twenty three

[0060] The resist tank 21 is a device that serves as a suppression means. A nitrogen supply pipe 26 for supplying nitrogen into the resist container 20 and a supply pipe 25a drawn out of the tank to supply resist from the resist bottle 22 And.

[0061] The resist supply pipe 25a has a double structure that prevents permeation of oxygen. The inner side is made of PFA having an outer diameter of 1/4 inch and an inner diameter of 4 · 8πιιηφ, which is approximately lm, and the outer side is made of PFA / Nylon 3 layer tube or soft vinylidene fluoride (PVDF) tube. An organic solvent gas is allowed to flow slowly through this two-layer structure. However, in the illustrated example, the inside is reduced to the vapor pressure of the organic solvent at room temperature. In this case, however, it is necessary to measure the vapor pressure of the organic solvent at room temperature.

[0062] The other end of the resist supply pipe 25a is connected to a drain valve 31a provided with a drain pipe 31a for removing moisture. The drain valve 31a is made of PTFE. Drain valve 3 1 and the flow regulating valve 32 are connected by a pipe 25b.

[0063] Like the resist supply pipe 25a, the resist supply pipe 25b has a double structure that does not transmit oxygen, and the inner side is made of PFA having an outer diameter of 1/4 inch and an inner diameter of 4.8πιιη φ and a length of approximately lm. On the outside, PFA / nylon 3 layer tube or soft PVDF tube. In this two-layer structure, the organic solvent gas is slowly flown as described above.

[0064] The flow regulating valve (registration pump) 32 is composed of PFA and PTFA! The filter 33 and the flow rate adjusting valve 34 are connected to the pipe 25d by! Filter 33 is made of PTFE.

[0065] Similar to the resist supply pipes 25a and 25b, the resist supply pipes 25c and 25d have a double structure, and the inner side is a PFA having an outer diameter of 1/4 inch and an inner diameter of 4.8πιιηφ and a length of approximately lm. Made of PFA / nylon 3 layer tube or softened PVDF tube on the outside. In this two-layer structure, a gas of an organic solvent is slowly flown as described above.

[0066] The flow rate adjusting valve 34 and the resist temperature controller 12 are connected by a pipe 25e. The flow rate adjustment valve 34 is made of a PTFE diaphragm.

[0067] The resist supply pipe 25e is the same as the resist supply pipes 25a and 25b.

[0068] In any of the above Regis M self-feed pipes 25 (25a, 25b, 25c, 25d, 25e), the oxygen transmission coefficient is 5 X 10 ⁶ (pieces / cm ² _SeC Pa) or less, It constitutes a suppression means. The volume of the pipe is 79.4 cm ³ .

[0069] At the tip of the resist temperature controller 12 downstream of the resist line 30, as shown in FIG.

[0070] Here, the resist temperature controller 12 is a PTFE tube having an outer diameter of 4 mm, an inner diameter of 3 mm, and a length of 0.5 m, and a polychlorinated bur (PVC) -based temperature controller formed on the outside thereof. It consists of a cooling water supply tube 13 and a PFA temperature-controlled cooling water discharge tube 14 formed on the outside of the tube, and between the PTFE tube and the temperature-controlled cooling water supply tube 13. Temperature-controlled cooling water is poured.

Referring to FIG. 3, the main part of the resist coater 110 is configured to spray resist onto the cup temperature controller 50 that forms a chamber inside and the wafer 5 installed in the cup temperature controller 50. The resist discharge device 10 provided with the nozzle 11 and an inert gas in the cup temperature controller 50 Gas supply pipe (gas nozzle) 51, which forms the gas supply means for supplying N gas, and the chamber

2

And a gas exhaust pipe 52 serving as a gas exhaust means for exhausting the gas in the chamber.

[0072] The cup temperature controller 50 is made of austenitic stainless steel containing A1 or made of high-purity A1 / Mg / Zn, and Al O is formed on the surface by anodization.

2 3 2 3 May be processed.

In the example of FIG. 2, the resist discharge apparatus 10 is provided with a deaeration film 33 in front of the pumps 32 and 34 as a suppression means for preventing oxygen from being mixed. Further, the resist supply pipe 25 of the resist discharge apparatus 10 uses a material having a low permeation gas coefficient as in the example of FIG.

[0074] As means for suppressing the entry of oxygen and moisture into the resist coating film, the gas supply pipe 51 serving as the gas supply means and the gas exhaust pipe 52 serving as the gas exhaust means are each composed of a PFA / nylon three-layer tube. . By supplying N gas through these gas supply pipe 51 and gas exhaust pipe 52, the atmosphere in the chamber is maintained at atmospheric pressure and in the atmosphere.

2

The concentration of oxygen and moisture is reduced to prevent oxygen and moisture from entering the resist coating film from the atmosphere.

[0075] As a result, there is no contamination of the resist material with pulsation at the time of resist coating. Resist etching at the RIE after the exposure process can be suppressed, and the resist material can be thinned. . This thinning enables further pattern miniaturization and continuous processing.

[0076] The characteristics of the embodiment of the present invention described above are summarized as follows.

The film coating apparatus according to the present invention includes a coating container for introducing a substrate to be coated into the substrate and coating the substrate, a coating liquid container for holding a coating liquid, and the coating liquid container from the coating liquid container. A structure including a liquid transport system for transporting the coating liquid to the coating container is used as a basic structure, and further, the coating film to be formed, for example, the content of at least one of oxygen and moisture in the photoresist is suppressed. Means are provided.

[0078] The suppression means includes a deaeration device that performs deaeration in the coating solution by passing nitrogen, and the degassing device is provided upstream of the supply port to which the coating solution is supplied to the coating solution container. Alternatively, it may be installed in the liquid transport system. Further, this deaeration device is connected to the liquid transport system. More preferably, it is installed in front of the amplifier.

[0079] Further, as the suppression means, as the resin piping used in the liquid transport system, one having an oxygen permeability coefficient of 5 × 10 ⁶ [pieces / cm ² secPa] or less may be used.

[0080] Further, as the suppression means, a double resin pipe is included, and a gas containing an inert gas or a gaseous organic solvent is present in a space between the inner pipe and the outer pipe of the double resin pipe, and oxygen The double resin pipe may be used in the liquid transport system.

[0081] Further, the suppression means may include a gas supply means and a gas exhaust means for controlling the atmosphere so as to prevent oxygen or moisture from being mixed into the internal atmosphere of the coating container. More preferably, this gas is at least one of an inert gas and hydrogen.

[0082] Further, such suppression means includes oxygen and moisture (H 2 O) in the applied film.

A concentration of at least one of 2 is preferably 1 ppm or less, more preferably 1 ppm or less.

[0083] Further, the film coating method of the present invention is a method of performing film coating using a film coating apparatus provided with the above-described suppressing means.

In addition, the method for manufacturing an electronic device of the present invention includes a step of applying a photosensitive resin film to a substrate using this film application method.

On the other hand, the data recording disk manufacturing method of the present invention includes a step of applying a recording film or a protective film as a coating film to the disk substrate using this film coating method.

In the above embodiment, the case where a resist is used as the coating solution has been described. However, the coating solution may be polyimide or an SOG or SOD material for forming an interlayer insulating film.

Industrial applicability

The film coating apparatus of the present invention is applied to the manufacture of ultra-precise equipment and parts such as resist coating on a semiconductor wafer.

Claims

The scope of the claims

[1] A coating container for introducing a substrate to be coated into the substrate and coating a film on the substrate, a coating liquid container for holding a coating liquid, and a liquid for transporting the coating liquid from the coating liquid container to the coating container In a film coating apparatus including a transport system,

A film coating apparatus comprising a means for suppressing the content of at least one of oxygen and moisture in the coated film.

[2] In the film coating apparatus according to claim 1, the suppression means includes a deaeration device, and the deaeration device includes a front stage of the supply port through which the coating liquid is supplied to the coating liquid container, and A film coating apparatus, wherein the film coating apparatus is installed in at least one of the liquid transport systems.

[3] The film coating apparatus according to [2], wherein the deaeration device is installed in front of a pump in the liquid transport system.

[4] The film coating apparatus according to claim 1 or 2, wherein the suppressing means includes a resin pipe having an oxygen permeability coefficient force of S5 X 10 ⁶ (pieces / cm ² _Sec Pa) or less, and the resin pipe is A film coating apparatus characterized by being used in a liquid transport system.

[5] The film coating apparatus according to claim 1 or 2, wherein the suppressing means includes a double resin pipe, and an inert gas or a gaseous state is formed in a space between the inner pipe and the outer pipe of the double resin pipe. A film coating apparatus in which a gas containing an organic solvent is present and the double resin pipe is used in the liquid transport system.

[6] In the film coating apparatus according to any one of [1] to [5], the suppression unit controls the atmosphere so as to prevent oxygen or moisture from being mixed into the atmosphere inside the coating container. A film coating apparatus comprising a gas supply means and a gas exhaust means.

7. The film coating apparatus according to claim 6, wherein the gas is at least one of an inert gas and hydrogen.

[8] The film coating apparatus according to any one of [1] to [7], wherein the suppressing means sets a concentration of at least one of oxygen and moisture in the coated film to 以下 ρρm or less. A film coating apparatus.

[9] The film coating apparatus according to claim 8, wherein the suppressing means is disposed in the coated film. A film coating apparatus, characterized in that the concentration of at least one of oxygen and moisture is 1 ppm or less.

[10] A film coating method comprising performing film coating using the film coating apparatus according to any one of [1] to [9].

[11] A method for manufacturing an electronic device, comprising the step of applying a photosensitive resin film to a substrate using the film application method according to [10].

12. A method for manufacturing a data recording disk, comprising the step of applying a recording film or a protective film to a disk substrate using the film coating method according to claim 10.