JPH097936A - Resist processing device and method therefor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To eliminate bubble from processing liquid without changing its density by deaerating the processing liquid on the way of processing liquid flow which is provided between processing liquid sending means and a processing liquid supplying nozzle, and to perform resist processing with high accuracy. SOLUTION: A tank 1 storing developer 2 is junctioned with a gas cylinder 3 storing pressurized gas such as nitrogen via a piping 4. An end of the piping 5 is soaked into the developer 2 in the tank 1. An intermediate tank 6 and a processing liquid deaerating mechanism 7 are provided in order. The developer 2 in the tank 1 is pressurized and transferred toward a nozzle 12 through the piping 5 by the pressurized gas in the gas cylinder 3 being supplied to the tank 1 through the piping 4. The piping 5 is divided into piping 5a and piping 5b at the lower portion of the processing liquid deaerating mechanism 7. Each piping provides with flow meters 8a and 8b, filters 9a and 9b and water jackets 10a and 10b and so on in order.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resist processing apparatus and a resist processing method, for example, a developing processing apparatus and a developing processing method for supplying a developing solution to a photoresist layer formed on the surface of a semiconductor wafer to develop the photoresist layer.

[0002]

2. Description of the Related Art In the manufacture of semiconductor devices, a semiconductor wafer as an object to be processed is coated with a photoresist,
A circuit is formed by transferring a circuit pattern to a photoresist using a photolithography technique and developing this.

In this developing process, a developing solution is supplied onto a semiconductor wafer as an object to be processed from a developing solution supply nozzle, and the developing solution is piled up by its surface tension and held for a predetermined time to form a circuit pattern. A method of developing is generally adopted.

Recently, from the viewpoint of uniformly supplying the developing solution, as such a method, for example, a developing solution supply nozzle having a large number of nozzle holes arranged in a straight line is used, and the developing solution is bleeding from this nozzle. A paddle type is adopted in which the semiconductor wafer is rotated at a low speed while being ejected to spread the developing solution over the entire semiconductor wafer.

By the way, in the case of adopting such a system, a method of pumping the developing solution in the tank toward the nozzle with nitrogen gas is generally adopted, and therefore the developing solution is transferred onto the semiconductor wafer. There is a problem in that air bubbles are generated when they are piled up. When such bubbles are present, there is a portion where the developing solution is not supplied, and as a result, a non-developing portion occurs.

In order to solve such a problem, conventionally,
Method of defoaming the developer under reduced pressure (Actual No. Sho 62-379)
No. 23), and a method of eliminating bubbles in a developing solution by using a foam breaking agent (Japanese Patent Laid-Open No. 61-259523).

[0007]

However, in the method of defoaming under reduced pressure described in Japanese Utility Model Laid-Open No. 62-37923, the concentration of the developing solution changes due to evaporation of water in the developing solution. Will end up. In addition, with the recent miniaturization of circuit patterns, resists have become higher in performance, that is, higher resolution, and development defects are caused by fine air bubbles, which have not been a problem in the past. Then, such fine bubbles cannot be sufficiently removed.

The present invention has been made in view of the above circumstances, and provides a resist processing apparatus and a resist processing method capable of removing air bubbles therein without changing the concentration of the processing liquid. To aim.

Further, the bubbles in the treatment liquid can be removed without changing the concentration of the treatment liquid, and the resist treatment can be performed with high accuracy without generating fine bubbles which are a problem when developing a high resolution resist. An object of the present invention is to provide a resist processing apparatus and a resist processing method capable of performing the above.

[0010]

SUMMARY OF THE INVENTION The present invention is a resist processing apparatus for supplying a processing liquid to an object to be processed for resist processing, and a processing liquid supply nozzle for supplying the processing liquid to the object to be processed. A processing liquid delivery means for delivering the processing liquid to the processing liquid supply nozzle, a processing liquid flow path provided between the processing liquid delivery means and the processing liquid supply nozzle, and a processing liquid flow path provided in the middle of the processing liquid flow path. A processing liquid degassing mechanism for degassing the processing liquid, wherein the processing liquid degassing mechanism includes a closed container, an inlet for introducing the processing liquid into the closed container, and a gas provided in the closed container. A member having a liquid separation function, an exhaust means for degassing the processing liquid through the member having the gas-liquid separation function to separate gas from the processing liquid by exhausting the inside of the closed container, and the gas-liquid separation The above-mentioned treatment of a treatment liquid in which gas is separated by a member having a function Providing a resist processing apparatus and a delivery port delivering towards the feed nozzle.

In the present invention, the processing liquid degassing mechanism includes a closed container, an inlet for introducing the processing liquid into the closed container, and an outlet for sending the processing liquid from the closed container to the processing liquid supply nozzle. A plurality of tubular members having a gas-liquid separation function in which the treatment liquid is flown, which are provided in the closed container over the inlet and the delivery port, and by exhausting the inside of the closed container, the plurality of Of the processing liquid flowing through the tubular member, and exhausting means for separating gas from the processing liquid through the wall portion, and the processing liquid separated from the gas is delivered from the outlet. It may be one.

In the present invention, the treatment liquid degassing mechanism is made of a porous material (for example, an average pore size of 0.2 to
0.8 μm polytetrafluoroethylene) minimum diameter first tube, intermediate diameter second tube, and non-porous material maximum diameter third tube are arranged in triple layers. A passage formed between the first tube and the second tube, the inner exhaust means being provided inside the first tube, the outer exhaust means being provided between the second tube and the third tube It may be a liquid that passes through the inside.

Further, the present invention is a resist processing method for supplying a processing liquid to an object to be processed to perform resist processing, wherein the processing liquid is evacuated through a member having a gas-liquid separating function to gas from the processing liquid. And a step of sending the treatment liquid in which gas is separated by the member having the gas-liquid separation function to the treatment liquid supply nozzle, and a step of supplying the treatment liquid from the treatment liquid supply nozzle to the object to be treated. A resist processing method comprising:

Further, the present invention is a resist processing method for supplying a processing liquid to an object to be processed for resist processing, comprising the steps of flowing the processing liquid through a plurality of tubular members having a gas-liquid separation function. A step of separating a gas from the treatment liquid by exhausting the treatment liquid flowing through the tubular body through a wall thereof, and delivering the treatment liquid in which the gas is separated by the tubular member to a treatment liquid supply nozzle And a step of supplying the treatment liquid to the object to be treated from a treatment liquid supply nozzle.

Here, the bubble is meant to include both the dissolved gas in the liquid and the gas in the pipe through which the developer flows.
The term “resist processing” as used herein means to include resist coating and developing processing.

[0016]

BEST MODE FOR CARRYING OUT THE INVENTION According to the resist processing apparatus and the resist processing method of the present invention, since the processing liquid is exhausted through the member having the gas-liquid separation function, the processing liquid itself is not discharged but the gas therein. Only separated. Therefore, the bubbles (gas components) in the treatment liquid can be removed without changing the concentration of the treatment liquid as much as possible.

Further, according to the resist processing apparatus and the resist processing method of the present invention, the processing liquid is caused to flow through the plurality of tubular members having a gas-liquid separating function, and the processing liquid is exhausted through the wall portion thereof. Since the gas component is separated from the treatment liquid by the above method, the surface area for discharging the gas component is increased, and only the gas component can be removed from the treatment liquid very efficiently. Therefore, the dissolved gas in the treatment liquid can be removed without changing the concentration of the treatment liquid, and the resist treatment can be performed with high precision without generating fine bubbles that are a problem when developing a high-resolution resist. be able to.

That is, in the conventional method of simply degassing under reduced pressure, the inside of the processing liquid is not completely degassed, and when the processing liquid collides with the object to be processed, the gas remaining in the processing liquid becomes fine bubbles. In this case, the treatment liquid cannot be completely degassed even when it adheres to the object to be treated and the bubbles in the treatment liquid are eliminated by using a defoaming agent. However, in the present invention, since only the gas can be efficiently removed through the plurality of tubular bodies having the gas-liquid separation function,
The generation of fine bubbles can be almost completely prevented without changing the concentration of the treatment liquid.

Further, in the resist processing apparatus of the present invention, when the treatment liquid degassing mechanism is constituted by a porous tube having a triple structure, the treatment liquid flows between the porous tubes,
Since it is possible to degas from the inside and outside of the tube at the same time, even with a tube with a short passage,
Degassing can be performed with high efficiency. As a result, the degassing mechanism can be downsized, the processing can be made uniform, and the yield can be improved.

Further, by making the first tube (innermost layer) and the second tube (intermediate layer) of the porous tube having a triple structure have a bellows structure, contact between the degassing tube and the treatment liquid is achieved. Since the area can be expanded, the degassing efficiency can be further enhanced. And at that time, the liquid passage,
That is, by arranging the first tube and the second tube so that the substantially horizontal cross-sections of the degassing paths have substantially the same area, that is, the bellows peaks and peaks and valleys and valleys have the same pitch, stable The flow path can be secured, that is, the flow rate can be prevented from being disturbed, and the processing liquid can be stably supplied.

Further, since a porous tube made of polytetrafluoroethylene having an average pore diameter of 0.2 to 0.8 μm has excellent hydraulic pressure resistance, this porous tube is
By using the tube and the second tube, it is possible to increase the liquid ratio (the pressure difference between the liquid side and the vacuum side across the degassing membrane) in order to enhance the degassing efficiency.

Embodiments of the present invention will be specifically described below with reference to the drawings. FIG. 1 is a schematic view showing a substrate coating / developing apparatus incorporating the developing apparatus of the present invention. The coating / developing apparatus mainly includes a load / unload unit 94, a first processing unit 95, a second processing unit 96, and an exposure device 93. 1, reference numeral 71 denotes a carrier stage of the load / unload section 94. On the carrier stage 71, a carrier C1 for accommodating a plurality of substrates to be processed before processing and a carrier C2 for storing substrates after processing are mounted. Also, load
On the unloading section 94, tweezers 72 for loading / unloading the substrate through the openings of the carriers C1 and C2 are placed. Main arms 73 and 74 for transporting substrates are arranged at the center of the first and second processing units, respectively. Further, a transfer table 75 is placed between the first processing unit 95 and the second processing unit 96.

A brush cleaning device 81, a jet water cleaning unit 82, and a coating device 8 are provided on both sides of the main arm 73 on the conveying path.
3. Adhesion processing unit 84 and cooling processing unit 85
Are disposed on both sides of the conveyance path of the main arm 74. A heating processing section 86 and a developing processing section 87 are disposed. A tweezer 91 and a transfer table 92 are arranged between the second processing unit 96 and the exposure device 93.

In the coating / developing apparatus having the above structure, the unprocessed substrate accommodated in the cassette C1 is taken out by the tweezers 72, and then the main arm 7 is removed.
3 and transported into the brush cleaning section 81. The substrate that has been brush-cleaned in the brush cleaning unit 81 is subsequently cleaned with high-pressure jet water in the jet water cleaning unit 82 as necessary. Thereafter, the substrate is subjected to a hydrophobic treatment in an adhesion processing section 84 and cooled in a cooling processing section 85, and then a photoresist film, that is, a photosensitive film is applied and formed in an application device 85. After that, an exposure process is performed in the exposure device 93 to transfer a predetermined pattern to the photoresist film. Then, the exposed substrate is conveyed into the development processing section 87, is developed by the developing solution degassed by the processing solution degassing mechanism 300, and is then rinsed off by the rinse solution.
This completes the developing process.

FIG. 2 is a schematic view showing an embodiment of the developing processing apparatus of the present invention. In FIG. 2, reference numeral 1 denotes a tank. Tank 1
A developer 2 is stored in the tank 1, and a tank 1 is provided with a gas cylinder 3 that stores a pressure-feeding gas such as nitrogen gas.
Connected through. In addition, the developer 2 in the tank 1
At the end of the pipe 5, the end of the pipe 5 is immersed, and in the middle of the pipe 5, an intermediate tank 6 and a processing liquid degassing mechanism 7 are sequentially provided. Then, the developing solution 2 in the tank 1 is supplied to the tank 1 through a pipe 4 by a pressurized gas, for example, a nitrogen gas, in a gas cylinder 3, and is supplied to the nozzle 12 through a pipe 5.

The pipe 5 is divided into a pipe 5a and a pipe 5b on the downstream side of the treatment liquid degassing mechanism 7, and each pipe has a flow meter 8a, 8b, a filter 9a, 9b and a water before reaching the nozzle 12. Jackets 10a, 10
b, an air operation valve 11a, 11b is provided in order, and a developing solution is introduced into the nozzle 12 from two places through these two pipes.

On the other hand, the developing section 13 includes a chuck 14 for sucking and holding a substrate, for example, a semiconductor wafer W, and a chuck 14.
And a cup 16 surrounding the semiconductor wafer W held by the chuck 14.

A limit sensor 6a and an empty sensor 6b, which are, for example, capacitance sensors, are provided on the outside of the intermediate tank 6, and signals from these are output to a controller (not shown) to detect the liquid level of the developing solution. The position is controlled. The flow rate of the developer 2 flowing through the pipes 5a and 5b is controlled by the flow meters 8a and 8b, and impurities and the like are removed by the filters 9a and 9b. The temperature-controlled water is circulated through the water jackets 10a and 10b, and thereby the pipes 5a and
The temperature of the developer 2 flowing through 5b is controlled.

The developing solution 2 processed in this way is sent to the nozzle 12 and is supplied from the nozzle 12 onto the semiconductor wafer W on the chuck 14 to be developed. next,
The nozzle 12 will be described. This nozzle 12 is shown in FIG.
As shown in FIG. 4 which is a cross-sectional view taken along the line IV-IV, a developer storage chamber 23 defined by a side wall 21 and a bottom wall 22 is provided. The upper opening of the accommodation chamber 23 is closed by a lid member 24, and the lid member 24 and the side wall 21 are closed.
Is sealed with a packing 25. Lid member 24
Has a developer supply port 27 at two locations, and the developer 2 sent through the pipes 5a and 5b is supplied into the developer storage chamber 23 through the two supply ports 27.
Housed in it. A plurality of liquid discharge holes 28 are formed in the bottom wall 22 along the longitudinal direction, and the developer 2 is supplied onto the semiconductor wafer W from the liquid discharge holes 28.
The horizontal length of the nozzle 12 is substantially equal to the diameter of the semiconductor wafer W.

When actually supplying the developing solution 2 from the nozzle 12 to the semiconductor wafer W, the nozzle 12 is positioned above the center of the wafer W as shown in FIG.
The semiconductor wafer W is rotated 1/2 by the motor 15 while the developing solution is being discharged onto the semiconductor wafer W from 8. As a result, the developer 2 having a predetermined thickness is placed on the semiconductor wafer 2.

During the puddle of the developing solution, it is preferable to discharge pure water to form a pure water solution film on the photoresist film before discharging the developing solution. In this way, by forming the liquid film of pure water in advance, the influence on the photoresist film by discharging the developing solution,
For example, the first impact can be mitigated.
As a result, it is possible to reduce defects due to first impact and the like.

Next, the processing liquid degassing mechanism 7 will be described. FIG. 6 is a sectional view showing an example of the processing liquid degassing mechanism 7. The processing liquid degassing mechanism 7 includes a closed container 31, an inlet 32 for introducing the processing liquid 2 into the closed container 31, a delivery port 33 for delivering the processing liquid from the closed container 31, and a closed container 31.
A partition member 34 having a gas-liquid separation function, which is provided above the inlet 32 and the outlet 33 inside the container so as to horizontally partition the container, and an exhaust pipe 35 connected to the upper wall of the closed container.
And a vacuum pump 36 for exhausting the inside of the container 31 via the exhaust pipe 35.

The partition member 34 having a gas-liquid separation function is
Unlike a normal porous body, it is a so-called non-porous body that has a property of passing a gas but not a liquid. As such a material, polytetrafluoroethylene (P
TFE), polyethylene, polycarbonate and the like.

When the inside of the container 31 is evacuated by operating the vacuum pump 36, the developer introduced from the inlet 32 to the portion below the partition member 34 of the container 31 has a gas-liquid separating function. It is degassed through the partition member 34 that it has, and the gas contained therein is separated. The developer 2 from which the gas has been separated is delivered from the delivery port 33 toward the nozzle 12.

When such a processing solution degassing mechanism is provided, the developing solution is degassed through the partition member 34 having a gas-liquid separating function, so that the developing solution itself is not removed and only the gas is removed. be able to. Therefore, the developer can be degassed without changing the concentration of the developer. Further, since the developer is not removed in this way, vacuum degassing can be made more intense, the amount of remaining gas can be made smaller than in the past, and fine bubbles will not be generated on the semiconductor wafer as the object to be processed. The rate of adhesion can be reduced.

Next, an example of a more advanced processing liquid degassing mechanism will be described with reference to FIG. In this example, a closed container 31 having an inlet 32 for introducing the developing solution 2 and a delivery outlet 33 for delivering the same as in FIG. 6 is provided, and like the mechanism of FIG. It has a pump 36.
In this example, instead of the partition member 34, a plurality of pipe members 38 extending from the introduction port 32 to the delivery port 33 are provided. The pipe member 38 is made of a material having the same gas-liquid separation function as that of the partition member 34, such as PTFE.

When the inside of the container 31 is evacuated by operating the vacuum pump 36, the developing solution flowing through the tube member 38 is degassed through its wall and contained therein. The gas that is present is separated. The developer 2 from which the gas has been separated is delivered from the delivery port 33 toward the nozzle 12.

When such a processing solution degassing mechanism is provided, the developing solution is caused to flow through a plurality of tube members 38 having a gas-liquid separating function, and the developing solution is exhausted through the wall portion thereof. Since the gas component is separated from the treatment liquid, the surface area from which the gas is discharged becomes large, and it is possible to extremely efficiently remove only the gas component from the treatment liquid. Therefore, not only the gas component in the processing liquid is removed without changing the concentration of the processing liquid, but also the development processing can be performed with high accuracy without generating fine bubbles that are a problem when developing a high resolution resist. It can be carried out.

From the viewpoint of exhibiting such an effect, it is preferable that the tube member 38 having a gas-liquid separating function is thin and the number thereof is large, and the inner diameter is 1 mm or less, and the number is preferably 100 or more.

Further, a tube member 39 as shown in FIGS. 11A and 11B may be used. That is, FIG.
In the example shown in FIG. 1, instead of the partition member 34, the introduction port 3
The pipe member 39 having a plurality of protrusions is provided in the cross section from 2 to the delivery port 33. The pipe member 39 is made of a material having the same gas-liquid separation function as the partition member 34,
For example, it is made of a porous body of PTFE. With such a configuration, the degassing film area can be dramatically increased as compared with the tube member 38 (flat tube material), and the gas component can be removed with high efficiency.

The treatment liquid degassing mechanism shown in FIGS. 6, 7, and 11 can effectively remove the impurity gas other than the pressure-feeding gas. Therefore, it is possible to prevent undesired reactions from occurring and prevent gelation and the like.

Using the development processing apparatus having the processing solution degassing mechanism shown in FIG. 7 and the conventional development processing apparatus, the development processing is performed on the 8-inch wafer to which the high resolution resist is actually applied, and a development defect is caused. 7 shows that in the case of the conventional apparatus, there were several tens of development defects centering on the portion corresponding to the position where the nozzle was at the beginning of the wafer.
In the development processing apparatus of the example equipped with the degassing mechanism, no development defects occurred. From this, the effect of the present invention was confirmed.

In the above example, the treatment liquid degassing mechanism is provided between the intermediate tank 6 and the flow meters 8a and 8b.
Not only at that position, but on the downstream side of the filters 9a and 9b, for example, as shown in FIG.
It may be provided between 10b and the air operation valves 11a and 11b (indicated by reference numerals 7a and 7b in the drawing). As described above, by providing the treatment liquid degassing mechanism on the downstream side of the filter, it is possible to trap large bubbles when passing through the filter, and thus it is expected that the degassing ability will be improved.

Further, the nozzle is not limited to the one having the above structure,
A stream nozzle 42 as shown in FIG. 9 may be used, or a multi-nozzle type in which a plurality of nozzles 44 are provided in a nozzle body 43 as shown in FIG.
In all of these, the nozzle is linearly moved while rotating the semiconductor wafer W as the object to be processed.

When these stream nozzles and multi-nozzles are used, fine bubbles are easily generated in the conventional developing device, but the use of the processing liquid degassing mechanism of the present invention makes it possible to almost completely eliminate the generation of fine bubbles. Therefore, the development defects can be substantially eliminated even when developing a high-resolution resist.

Incidentally, as a result of developing the high resolution resist on the wafer by the conventional developing apparatus using the stream nozzle, several hundreds of development defects were observed, whereas
No development defects occurred at the time of development with the development processing apparatus employing the degassing mechanism of FIG. Moreover, as a result of developing the high-resolution resist on the wafer with the conventional developing apparatus using the multi-nozzle, 10,000 or more developing defects were observed, but with the developing apparatus employing the degassing mechanism of FIG. When developed, there were about a dozen or so development defects.

The degassing conditions of the processing solution degassing mechanism in the development processing method of the present invention are preferably selected appropriately in consideration of the pressure reduction force, the type of photoresist, the degassing time, the concentration of the developing solution, and the like. For example, when degassing is performed with an excessively high decompression force, the developing solution starts to boil below the ambient temperature and vaporizes, and moisture permeates the film, resulting in a high concentration of the developing solution. In this case, that is, when the decompression force is too high, the development process becomes unstable as shown in FIG. 12, and the line width becomes narrower as shown in FIG. 13 and FIG.
As shown in, the type of photoresist (X, Y, Z),
The developer concentration depending on the deaeration time and the decompression force (Fig. 13)
It can be seen that the minimum exposure time (E _th ) changes.

In the above embodiment, the semiconductor wafer is used as the object to be processed, but the present invention is not limited to this, and may be a liquid crystal display substrate, for example. In addition, various modifications can be made without departing from the gist of the present invention. (Embodiment 2) FIG. 15 is a schematic structural view showing another example of the developing processing apparatus of the present invention. The development processing apparatus mainly includes a developing solution supply system 100, a development processing unit 200, and a deaeration mechanism 300. As shown in FIG. 15, the developing solution supply system 100 includes a tank 102 in which the developing solution is stored.
A flow meter 103 for measuring the flow rate of the developing solution, a filter 104 for filtering the developing solution, a temperature controller 105 for adjusting the temperature of the developing solution, and a degassing mechanism 300 for removing fine bubbles in the developing solution. And a valve 106.
The developer stored in the tank 102 is pushed out by the pressure of nitrogen gas, and the flow meter 103, the filter 104,
After being degassed by the degassing mechanism 300 via the temperature controller 105, it is supplied to the development processing section 200 via the valve 106.

FIG. 16 is a schematic view showing the development processing section.
In the figure, reference numeral 202 denotes a rotary cup having an open upper surface and rotatable about a vertical axis. A lid 204 for opening and closing the opening 202A is provided on the upper opening 202A of the rotary cup 202. In addition, the rotating cup 2
An opening portion 202B is formed in the center of the bottom surface of 02, and the upper edge of the rotary collar 202C for rotating the rotary cup 202 is connected to the opening edge. In this embodiment, the rotary cup 202 and the lid 204 are
Is a rotating container.

In the rotary cup 202, a rotary mounting table rotatable about the vertical axis, for example, a spin chuck 206, has an opening 202B on the bottom surface of the rotary cup 202 on the rear surface of the peripheral edge, and a sealing member such as an O-ring. It is provided so as to seal by 208. This spin chuck 20
Reference numeral 6 is attached to the top of an elevating shaft 214 that is elevated by an elevating mechanism 212 such as an air cylinder. The elevating shaft 214 is connected to the drive pulley 222 via a spline bearing 216, a driven pulley 218, and a drive belt 220, and a spin motor 224 imparts a rotational driving force to the elevating shaft 214, thereby The spin chuck 206 can be rotated.

Similarly, the rotary collar 202C is connected to a common drive pulley 230 via a driven pulley 226 and a drive belt 228. The drive pulley 222 and the drive pulley 230 are arranged on the common shaft 232, and the common spin motor 224 applies a rotary driving force to the spin chuck 206 and the rotary collar 202C (and thus the rotary cup 202). (Including the rotating container) rotates in synchronization.

Further, the spin chuck 206 has a vacuum chuck (not shown) on its upper surface and has a function of chucking the object 234 to be processed, for example, an LCD substrate (glass substrate for liquid crystal display). . The vacuum chuck is connected to an external vacuum device via a vacuum passage (not shown) formed in the lifting shaft 214.

A nozzle 236 for supplying a developing solution is provided at the center of the lid body 204 through a bearing 238 with respect to the lid body 204.
It is mounted so that it can rotate relative to the rotation axis of the second rotation shaft. Therefore, the developing solution degassed by the degassing mechanism 300, which will be described later, passes through the valve 106 and the nozzle 236.
From the above, a predetermined amount is supplied to the surface of the object 234 to be processed placed on the spin chuck 206.

Further, a drain cup 250 is provided outside the rotary cup 202 so as to surround the rotary cup 202.
Is fixedly provided to a fixing portion (not shown). The drain cup 250 includes a drain hole 254 for discharging drainage discharged from drainage holes 252A, 252B provided at the outer edge and side portions of the bottom of the rotary cup 202 to the outside, and an exhaust bent toward the inner side in the radial direction. A path 256 and an exhaust port 258 communicating with the exhaust path 256 and connected to an exhaust device (not shown) are provided. In addition, the exhaust path 256
Is formed so as to pass through a position higher than the drain hole 254, and is configured so that drainage does not flow into the exhaust port 258.

As shown in FIG. 18, the lid 204 is inserted into an arm 242 which is moved up and down by an elevating part 240, and when the arm 242 is moved up and down, the rotary cup 20 is moved.
The second upper surface opening 202A is configured to be opened and closed. A part of the nozzle 236 in the middle is fixed to the arm 242, for example. Further, a transport arm 244 is separately provided for loading and unloading the object 234 to be processed, and the spin chuck 200 and the object transport arm 24 to be processed.
When the lid 204 is lifted and the upper surface opening 202A is opened, the spin chuck 206 is moved up and down by the elevating means 212 when the object 234 to be processed is transferred between the spin cup 206 and the rotating cup 20.
2 above the upper surface of the arm 2 and the arm 244 is attached to the spin chuck 2
It is performed by entering the spin chuck 206 side at a level lower than the lower surface of the object 206 to be processed chucked by 06.

Next, referring to FIG. 17, the degassing mechanism 3
An example of 00 will be described. As shown in FIG. 17, the degassing mechanism 300 mainly includes a manifold section 302 and a degassing tube section 304. Manifold part 302
The deaeration tube section 304 and the deaeration tube section 304 are detachably connected via the engaging section 306, and the deaeration tube that has been clogged due to long-term use can be easily replaced.

The degassing tube portion 304 has a flexible triple tube structure. This triple tube structure includes a first tube 308 having a minimum diameter of a flexible porous material, a second tube 310 having an intermediate diameter, and a third tube having a maximum diameter made of a flexible non-porous material. And a tube 312. Thus, the first to third tubes 308, 310, 31
Since 2 is made of a flexible material, it can be flexibly bent according to the place of arrangement, and has a high degree of freedom in design.

First tube 308 and second tube 310
Has a bellows structure that is configured so that the pitches are substantially the same, and is positioned so that the peaks and peaks and the valleys and valleys of each tube face each other. The path 314 is formed. Therefore, the area of the substantially horizontal cross section of the developer flow path 314 surrounded by the outer side of the first tube 308 and the inner side of the second tube 310, that is, the cross section with the central axis of the tube as a vertical line, has a bellows portion. Also, since the developing solution has substantially the same area, the developing solution flows smoothly, the flow rate is prevented from being disturbed, and the stable supply is possible. In the present embodiment, the surface areas of the tubes can be made larger even in the case of the circulation strokes of the same length, and the first and second tubes 308, 310 are provided.
Although the bellows structure is adopted so that the contact area between the developing solution and the developing solution can be further expanded, the present invention is not limited to such an embodiment, and the first and second first and second tubular structures are simply configured. It is also possible to arrange tubes.

Inside the first tube 308, a hollow first deaeration path 316 is formed, and the second tube 3
A second tubular degassing path 318 is formed between the 10 and the third tube 312. Further, the first tube 308 and the second tube 310 are composed of a polytetrafluoroethylene porous tube having an average pore diameter of 0.2 to 0.8 μm. In this example, polytetrafluoroethylene is used as the porous material, because it is possible to obtain highly accurate porosity by using a relatively simple rolling and stretching process. . However, the material forming the first and second tubes is not limited to polytetrafluoroethylene, and various commercially available porous materials can be used.

Further, in the above embodiment, a porous tube made of polytetrafluoroethylene having an average pore size of 0.2 to 0.8 μm is used. If the average pore size is too large, the tube tends to be deformed when a high hydraulic pressure is applied in order to improve the degassing efficiency, and sufficient hydraulic pressure resistance tends not to be obtained. On the other hand, if the average pore size is too small, air permeability is hindered and sufficient deaeration tends to be impossible. Considering these, the range of the average pore diameter of 0.2 to 0.8 μm is preferable.

On the other hand, the third tube 312 arranged on the outermost side is a non-porous material which has flexibility but does not need to ventilate and has a strength not to be deformed when deaerated. For example, polyvinyl chloride other than ΤΤFE (PV
C), stainless steel (SUS), acrylic resin, tetrafluoroethylene-perfluoroalkoxyethylene copolymer (PFA), and other gas impermeable materials.

Next, the structure of the manifold portion 302 will be described. As shown in the figure, the manifold portion 302 is formed with a first path 320 through which the developing solution flows, and second and third paths 322 and 324 which are independently configured. One side of the manifold portion 302 has a first
The joint 326 is installed. This first fitting 326
Is for connecting the first path 320 and a PFA tube 328 communicating with a developer tank (not shown).

A second joint 330 is installed below the center of the manifold 302. The second joint 330 is for connecting an exhaust means (not shown) such as a vacuum suction device to the second path 322. The second path 322 is the degassing tube portion 30.
The first deaeration path 316 formed inside the first tube 308 of No. 4 and the second path 32.
2. Therefore, by exhausting the inside of the first degassing path 316, the developing solution flowing inside the developing solution flowing path 314 formed on the outside of the first tube 308 is degassed from the inside to remove air bubbles in the developing solution. It can be removed.

Further, a third joint 332 is installed on the other side of the manifold portion 302. The third joint 332 includes an exhaust means (not shown) and the third path 32.
It is for connecting with 4. The third path 324 communicates with the second degassing passage 318 formed between the second tube 310 and the third tube 312 of the degassing tube 304, and the third path 324 is provided. 32
4. Therefore, by exhausting the second degassing path 318, it is possible to degas the developing solution flowing in the developing solution flow path 314 formed inside the second tube 310 from the outside.

As described above, according to the degassing mechanism in the development processing apparatus of the present invention, the processing liquid such as the developing liquid flowing in the degassing tube is placed inside the flow path formed in a substantially circular shape. Since it is possible to degas simultaneously from both sides on the outside, it is possible to improve the degassing efficiency as compared with the conventional degassing mechanism. In the illustrated embodiment, the configuration is shown in which the developing solution is sent to the deaeration tube section 304 via the single manifold section 302 and the gas is exhausted from the deaeration tube section 304, but the present invention is limited to such a configuration. Not done. For example, the manifold portion that supplies the developing solution and the manifold portion that performs the exhaust can be configured separately, or the exhaust can be configured to be performed from a plurality of locations.
The manifold section 302 may be provided on the other end side of the degassing tube 304 shown in FIG. 17 so that air can be exhausted from both ends.

Next, the operation of the entire developing processing apparatus shown in FIG. 15 will be described. First, as shown in FIG. 18, the lid 204 is lifted from the rotary cup 202 and opened,
The spin chuck 206 is raised to transfer the object 234 to be processed, for example, an LCD substrate from the transfer arm 244 to the spin chuck 206, and the spin chuck 206 is vacuum-adsorbed. Next, the spin chuck 206 is lowered to bring the spin chuck 206 into close contact with the bottom of the rotary cup 202. In this state, nitrogen gas is supplied to the tank 102, and the developing solution is sent to the developing solution supply system 100 by the gas pressure. The flow rate of the sent developing solution is controlled by the flow meter 103, filtered by the filter 104, adjusted to an optimum temperature by the temperature adjusting means 105, and then sent to the degassing mechanism 300.

In the degassing mechanism 300, the developer is supplied to the first tube 308 and the second tube 31 as shown in FIG.
During the meandering passage between 0 and 0, air is efficiently degassed from both inside and outside, and the bubbles in the developer are removed. The developing solution degassed by the degassing mechanism 300 in this way is dropped through the valve 106 from the nozzle 236 above the object 234 to be dropped in a predetermined amount by a supply method such as a spray from the central portion of the object. (See Figure 19).

Next, when the motor 224 is driven, the belts 220 and 228 are used to rotate the rotary collar 202C and the lifting shaft 2.
14 rotates at the same rotation speed at a low speed. As a result, the rotating cup 202 and the spin chuck 206 rotate in synchronization at the same rotation speed, and the developing solution on the object 234 is stretched by the centrifugal force to cover the surface of the object 234. Development processing of the object is performed. Thereafter, while rotating at a high speed, the rinse liquid is supplied to wash away the developer, thereby completing the development process.

At the time of such processing, the residual developer blown off by the centrifugal force is discharged into the drain cap 250 through the drain holes 252A, 252B provided at the outer edge and the side of the bottom of the rotary cup 202, and the drain cup 250 is drained. 250
It is discharged to the outside through a drain port 254 provided at the bottom of the.

The structure, shape, etc. of each part in the above-described embodiment are examples, and various changes and modifications are possible. For example, although the above embodiment has been described by taking the apparatus for applying the developing solution on the LCD substrate as an example, the present invention applies various processing solutions, such as coating solution, to other objects to be processed such as semiconductor wafers. It is also applicable to the device. Further, in the above-described embodiment, the configuration of the developing device 200 is described as the cup rotation type in which the rotary cup 202 and the object 234 are simultaneously rotated. However, the cup is fixed and the object is rotated, the spinner type is used. It can also be configured with.

As described above, according to this embodiment, the treatment liquid circulates in the middle portion of the porous tube having a triple structure and can be simultaneously degassed from the inside and the outside of the degassing tube. Since this is possible, it is possible to degas with high efficiency even with a single tube having a short path. As a result, the degassing mechanism can be downsized, the processing can be made uniform, and the yield can be improved.

The above-described first and second embodiments can be implemented in an appropriate combination. Further, in the above embodiment, the case where the developing solution is used as the processing solution has been described, but the present invention can be applied to the case where the processing solution is a resist solution. In this case, since the volatile liquid is contained in the resist liquid, the concentration and viscosity of the resist liquid can be adjusted by degassing.

[0073]

As described above, according to the present invention,
Since the processing liquid is exhausted through the member having the gas-liquid separation function, the processing liquid itself is not discharged and only the gas component therein is separated. Therefore, there is provided a resist processing apparatus and a resist processing method capable of removing air bubbles therein without changing the concentration of the processing liquid.

Further, according to the present invention, the treatment liquid is caused to flow through the plurality of tubular members having a gas-liquid separation function, and the treatment liquid is exhausted through the wall portions thereof to separate the gas from the treatment liquid. Therefore, the surface area from which the gas is discharged becomes large, and only the gas can be removed from the processing liquid extremely efficiently. Therefore, it is possible to remove the bubbles in the treatment liquid without changing the concentration of the treatment liquid, and to perform the resist treatment with high precision without generating fine bubbles that are a problem when developing a high-resolution resist. A resist processing apparatus and a resist processing method capable of performing the above are provided.

[Brief description of drawings]

FIG. 1 is a schematic view showing a coating / developing apparatus incorporating a resist processing apparatus (developing apparatus) of the present invention.

FIG. 2 is a schematic diagram showing a resist processing apparatus (developing processing apparatus) of the present invention.

FIG. 3 is a cross-sectional view showing the structure of a nozzle used in the development processing apparatus shown in FIG.

4 is a cross-sectional view of the nozzle shown in FIG. 3, taken along line IV-IV.

FIG. 5 is a diagram for explaining a developing solution supply operation of a nozzle.

6 is a sectional view showing an example of a processing liquid degassing mechanism used in the developing processing apparatus shown in FIG.

7 is a sectional view showing an example of a processing liquid degassing mechanism used in the developing processing apparatus shown in FIG.

FIG. 8 is a schematic diagram showing a development processing apparatus of the present invention.

FIG. 9 is a diagram showing another example of nozzles used in the development processing apparatus of the present invention.

FIG. 10 is a diagram showing another example of a nozzle used in the developing processing apparatus of the present invention.

11A is a cross-sectional view showing another example of the processing liquid degassing mechanism used in the development processing apparatus shown in FIG. 2, and FIG. 11B is a XIB-XIB of the processing liquid degassing mechanism shown in FIG. Sectional drawing which follows the line.

FIG. 12 is a graph showing the relationship between the degassing time and the line width in the processing liquid degassing mechanism used in the development processing apparatus of the present invention.

FIG. 13 is a graph showing the relationship between the degassing time and the developing solution concentration in the processing solution degassing mechanism used in the developing processing apparatus of the present invention.

FIG. 14 is a graph showing the relationship between the degassing time and the minimum exposure time in the processing liquid degassing mechanism used in the development processing apparatus of the present invention.

FIG. 15 is a schematic view showing another example of the processing liquid degassing mechanism of the development processing apparatus of the present invention.

FIG. 16 is a schematic view showing another example of the processing liquid degassing mechanism of the development processing apparatus of the present invention.

FIG. 17 is an enlarged view of a processing liquid degassing mechanism portion of the development processing apparatus of the present invention.

FIG. 18 is a view for explaining opening / closing of a lid and delivery of an object to be processed of the developing processing apparatus of the present invention.

FIG. 19 is a view for explaining the operation of the development processing apparatus of the present invention.

[Explanation of symbols]

1, 102 ... Tank, 2 ... Developer, 3 ... Gas cylinder,
4, 5, 5a, 5b ... Piping, 6 ... Intermediate tank, 6a ... Limit sensor, 6b ... Empty sensor, 7 ... Treatment liquid degassing mechanism, 8a, 8b ... Flow meter, 9a, 9b, 1
04 ... Filter, 10a, 10b ... Water jacket, 11a, 11b ... Air operation valve, 12
... Nozzle, 13 ... Developing unit, 14 ... Chuck, 15 ... Motor, 16 ... Cup, 21 ... Side wall, 22 ... Bottom wall, 23 ... Developer solution storage chamber, 24 ... Lid member, 25 ... Packing, 27 ... Developer supply Mouth, 28 ... Liquid discharge hole, 31 ... Airtight container, 32 ...
Inlet port, 33 ... Outlet port, 34 ... Partition member, 35 ... Exhaust pipe, 36 ... Vacuum pump, 38, 39 ... Pipe member, 42 ... Stream nozzle, 43 ... Nozzle body, 44, 236 ... Nozzle, 72, 91 ... Tweezers, 73, 74 ... Main arm for substrate transfer, 75, 92 ... Transfer table, 81 ... Brush cleaning device, 82 ... Jet water cleaning unit, 83 ... Coating device, 84 ... Adhesion processing unit, 85 ... Cooling processing unit,
86 ... Heat processing section, 87 ... Development processing section, 93 ... Exposure device, 94 ... Load / unload section, 95 ... First processing section,
96 ... 2nd process part, 100 ... Developer supply system, 103 ... Flowmeter, 105 ... Temperature controller, 106 ... Valve, 200 ...
Development processing unit, 202 ... Rotating cups, 202A, 202B
... Aperture, 202C ... Rotating collar, 204 ... Lid, 20
6 ... Spin chuck, 208 ... Seal member, 212 ... Elevating mechanism, 214 ... Elevating shaft, 216 ... Spline bearing, 2
18, 226 ... Driven pulley, 220, 228 ... Drive belt, 222, 230 ... Drive pulley, 224 ... Spin motor, 232 ... Common shaft, 234 ... Object to be processed, 238 ... Bearing, 240 ... Elevating part, 242 ... Arm, 244 ... Transport arm, 250 ... Drain cup, 252A, 252B
... Drainage hole, 254 ... Drain hole, 256 ... Exhaust path, 25
8 ... Exhaust port, 300 ... Deaeration mechanism, 302 ... Manifold part, 304 ... Deaeration tube part, 306 ... Engagement part, 308
... first tube, 310 ... second tube, 312 ... third
Tube, 314 ... Developer flow path, 316 ... First degassing path, 318 ... Second degassing path, 320 ... First path, 322 ... Second path, 324 ... Third path, 326
... first joint, 328 ... PFA tube, 330 ... second
Fittings.

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Hiroyuki Iino 1 2381 Kitashitajo, Fujii-cho, Nirasaki-shi, Yamanashi Tokyo Electron Kyushu Co., Ltd. Yamanashi Plant (72) Inventor Norio Chiba Kikuyo-machi, Kikuchi-gun, Kumamoto Prefecture Kure 2655 Tokyo Electron Kyushu Co., Ltd. Kumamoto Plant (72) Inventor Yoshio Kimura Kikuyo-cho, Kumamoto Prefecture Kikuyo Town Tsukyu 2655 Tokyo Electron Kyushu Kumamoto Plant

Claims (20)

[Claims] 1. A resist processing apparatus for supplying a processing liquid to an object to be processed for resist processing, comprising: a processing liquid supply nozzle for supplying the processing liquid to the object; and a processing liquid for the processing liquid supply nozzle. A treatment liquid delivery means for delivering the treatment liquid, a treatment liquid flow passage provided between the treatment liquid delivery means and the treatment liquid supply nozzle, and a treatment provided in the middle of the treatment liquid passage for degassing the treatment liquid. A resist processing apparatus comprising a liquid degassing mechanism. 2. The processing liquid degassing mechanism comprises a closed container, an inlet for introducing the processing liquid into the closed container, a member provided in the closed container and having a gas-liquid separation function, and an inside of the closed container. Exhausting means for degassing the treatment liquid through a member having a gas-liquid separation function to separate gas from the treatment liquid by evacuation, and the treatment liquid in which the gas is separated by the member having the gas-liquid separation function. 2. The resist processing apparatus according to claim 1, further comprising a delivery port for delivering the liquid toward the processing liquid supply nozzle. 3. The resist processing apparatus according to claim 2, wherein the member having a gas-liquid separating function is a non-porous body having a property of passing gas but not liquid. 4. The resist processing apparatus according to claim 3, wherein the non-porous body is one material selected from the group consisting of polytetrafluoroethylene, polyethylene, and polycarbonate. 5. The processing liquid degassing mechanism includes a closed container, an inlet for introducing the processing liquid into the closed container, and an outlet for sending the processing liquid from the closed container to the processing liquid supply nozzle. A plurality of tubular members having a gas-liquid separation function, which are provided in the closed container over the introduction port and the delivery port, and through which the treatment liquid flows, and the plurality of tubular members are exhausted from the closed container. A processing liquid, which is degassed of the processing liquid flowing through the member through the wall thereof, and is configured to separate gas from the processing liquid, and the processing liquid in which the gas is separated is delivered from the outlet. 1. The resist processing apparatus according to 1. 6. The resist processing apparatus according to claim 5, wherein the plurality of tubular members have an inner diameter of 1 mm or less. 7. The resist processing apparatus according to claim 5, wherein the plurality of tubular members is 100 or more. 8. The processing liquid degassing mechanism includes a closed container, an inlet for introducing the processing liquid into the closed container, and an outlet for sending the processing liquid from the closed container toward the processing liquid supply nozzle. A tubular member having a plurality of projecting portions formed along the pipe axis direction having a gas-liquid separation function in which the treatment liquid is provided, the tubular member being provided across the introduction port and the delivery port in the closed container, By exhausting the inside of the closed container, the processing liquid flowing through the tubular member is degassed through the wall portion thereof, and the exhaust liquid has an exhaust means for separating gas from the processing liquid, and gas is discharged from the outlet. The resist processing apparatus according to claim 1, wherein the separated processing liquid is delivered. 9. The resist processing apparatus according to claim 8, wherein the tubular member is made of a porous material. 10. The treatment liquid degassing mechanism has a first diameter, a first tube made of a porous material, and a second diameter larger than the first diameter, and made of a porous material. Second tube, a third tube having a third diameter larger than the second diameter and made of a non-porous material, an inner exhaust unit provided inside the first tube, and the second tube. An outer evacuation unit provided between a tube and the third tube, wherein the processing liquid is passed through a path formed between the first tube and the second tube. Resist processing equipment. 11. The average pore size of the porous material is 0.2 to
The resist processing apparatus according to claim 10, which has a thickness of 0.8 μm. 12. The resist processing apparatus according to claim 10, wherein the porous material is polytetrafluoroethylene or methylpentene resin. 13. The non-porous material is a material selected from the group consisting of polytetrafluoroethylene, polyvinyl chloride, stainless steel, acrylic resin, and tetrafluoroethylene-perfluoroalkoxyethylene copolymer. 10. The resist processing apparatus according to 10. 14. The resist processing apparatus according to claim 1, wherein the processing liquid supply nozzle is a stream nozzle or a multi-nozzle. 15. A resist processing method for supplying a processing liquid to an object to be processed for resist processing, comprising the step of exhausting the processing liquid through a member having a gas-liquid separation function to separate gas from the processing liquid. And a step of delivering the processing liquid, the gas of which is separated by the member having the gas-liquid separation function, to the processing liquid supply nozzle, and a step of supplying the processing liquid from the processing liquid supply nozzle to the object to be processed. A resist processing method characterized by the above. 16. The exhaust condition is set in consideration of at least one selected from the group consisting of decompression force, photoresist type, degassing time, and developer concentration when separating gas from the processing liquid. The resist processing method according to claim 15. 17. The resist processing method according to claim 15, further comprising a step of supplying pure water to the object to be processed from the processing liquid supply nozzle before the step of supplying the processing liquid to the object to be processed from the processing liquid supply nozzle. . 18. A resist processing method for supplying a processing liquid to an object to be processed to perform resist processing, comprising the step of flowing the processing liquid through a plurality of tubular members having a gas-liquid separation function, said tubular body Separating the gas from the processing liquid by exhausting the processing liquid flowing through the wall through the wall thereof, and sending the processing liquid in which the gas is separated by the tubular member to the processing liquid supply nozzle, And a step of supplying the processing liquid from a processing liquid supply nozzle to an object to be processed. 19. An exhaust condition is set in consideration of at least one selected from the group consisting of decompression force, photoresist type, degassing time, and developer concentration when separating gas from a processing liquid. The resist processing method according to claim 18. 20. The resist processing method according to claim 18, further comprising a step of supplying pure water to the object to be processed from the processing liquid supply nozzle before the step of supplying the processing liquid to the object to be processed from the processing liquid supply nozzle. .