WO2008026750A1 - Substrat de matrice active et procede de fabrication associe - Google Patents

Substrat de matrice active et procede de fabrication associe Download PDF

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Publication number
WO2008026750A1
WO2008026750A1 PCT/JP2007/067092 JP2007067092W WO2008026750A1 WO 2008026750 A1 WO2008026750 A1 WO 2008026750A1 JP 2007067092 W JP2007067092 W JP 2007067092W WO 2008026750 A1 WO2008026750 A1 WO 2008026750A1
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WIPO (PCT)
Prior art keywords
active matrix
film
amorphous silicon
resin
silicon film
Prior art date
Application number
PCT/JP2007/067092
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English (en)
Japanese (ja)
Inventor
Masahiro Hanmura
Takeyoshi Kato
Original Assignee
Zeon Corporation
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Application filed by Zeon Corporation filed Critical Zeon Corporation
Priority to JP2008532143A priority Critical patent/JPWO2008026750A1/ja
Publication of WO2008026750A1 publication Critical patent/WO2008026750A1/fr

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/02—Materials and properties organic material
    • G02F2202/022—Materials and properties organic material polymeric
    • G02F2202/023—Materials and properties organic material polymeric curable
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/10—Materials and properties semiconductor
    • G02F2202/103—Materials and properties semiconductor a-Si

Definitions

  • the present invention relates to an active matrix storehouse that can be manufactured by a simple process and has a high level of ifffi and a method for making the same.
  • Background sickle
  • the active matrix is the gate signal ⁇ ! And source signal that are arranged orthogonal to each other on 3 ⁇ 4K.
  • ⁇ The pixel ⁇ is placed near the intersection of the spring with a thin film transistor ( ⁇ F ⁇ ).
  • Powerful traps are used in active matrix flat panel displays, which are noisy because each display pixel is individually controlled by a TFT (switching element). Compared to matrix type flat display devices, crosstalk is less likely to occur, making it suitable for high definition and large capacity display.
  • FIG. 7 is an explanatory diagram of an example of a circuit on a conventional active matrix sickle.
  • the TFT 14 as a switching element is placed near the intersection of the gate signal 1 2 and the source signal “ ⁇ spring 1 3” arranged orthogonally on the top.
  • Applied to the gate ⁇ ⁇ 15 Depending on mE, the amount of fluid flowing from the source 3 ⁇ 4S 1 6 force to the drain consol 17 changes, and this change is passed through the contact hole to the pixel f 18. .
  • a passivation film made of silicon nitride or the like is formed on the surface of the array formed with the TFT force S by a sputtering method, a vapor deposition method, or a CVD method, and the surface is increased due to the layer-like view.
  • Many of them have a structure that is flattened and has a pixel consolation that is the drain of the TFT in the contact Honoré.
  • Patent Document 1 discloses an active matrix substrate having a passivation film made of Si N x or sio 2 and a flat film l (interlayer deception D) made of benzocyclobutene.
  • Patent Document 2 Japanese Patent Laid-Open No. 11-3070 778 Disclosure of Invention
  • the present invention has been made for the purpose of producing an active matrix which can be produced by a simple process and which has a high lightning resistance. As a result of intensive efforts to solve the above-mentioned defects, the present inventors have formed a ⁇
  • the active matrix sickle formed by silylating the surface of the FT amorphous surface silicon film and then forming a protective film on it, has a small leakage temperament. Rough force between comforts 3 ⁇ 4f Standing in a spring, and even after a long period of 3 ⁇ 4cS under high temperature and humidity, it is found that the threshold value required to flow 4
  • the present invention has been made based on the findings.
  • An active matrix comprising thin film transistors having an amorphous silicon film formed on the basis of ingenuity, where the surface of the amorphous silicon film is silylated and the surface of the force silylated amorphous silicon film Has a shelf protection film on top ACTIVITY MATRIX 3 ⁇ 43 ⁇ 4,
  • the organic matrix is an active matrix according to (2) or (3), wherein the organic matrix is a film made of a cross-linked alicyclic olefin polymer having a pole.
  • the above-mentioned crushed raw resin yarn is composed of an alicyclic olefin polymer having a pole
  • an active matrix sample having a high level and high durability can be efficiently produced by a simple operation.
  • F i g.1 (a) is a schematic plan view of one pixel unit of the contribution of the active matrix of the present invention
  • F i g.1 (b) is a partial sectional view including a TFT portion
  • .2 is a plan view of an active matrix type liquid crystal display device using the active matrix according to the present invention
  • FIG. 3 is an X of the active matrix type liquid crystal display device of FIG. — Y cross section F i g. (Part)
  • F i g.4 is a diagram showing a typical configuration example of the organic EL element in the organic EL display device of the present invention
  • F i g.5 is an active matrix organic FIG.
  • FIG. 6 is an explanatory diagram of an example of a circuit on the active matrix of the present invention used in an electroluminescence display device.
  • F i g .7 is an example illustration of a circuit on a conventional ⁇ active Matrigel Tsu + substrate .
  • reference numeral 1 is, 2 is a gate signal line, 3 is a source signal spring, 4 is a thin film transistor (TFT), 5 is a gate motion, 6 is a source electrode, 7 is a drain ®fl, and 8 is a silylated part.
  • TFT thin film transistor
  • 9 is an organic protective film
  • 10 is a contact hole
  • 11 is a pixel 12 is a gate signal
  • 13 is a source signal
  • 14 is a thin film transistor (TFT)
  • 1 5 is Goto consolation
  • 16 is source consolation
  • 17 is drain electrode
  • 18 is pixel electrode
  • 19 is ⁇ 3 ⁇ 4 f main layer
  • 20 is Goto thread color
  • 101 is active matrix 3 ⁇ 43 ⁇ 4
  • 102 is color finer 3 ⁇ 4K
  • 103 is the sole
  • 104 is ⁇ ) 3 ⁇ 43 ⁇ 4 ⁇
  • 105 is comfort.
  • 108 is the input ⁇ &
  • 110 is the nocturnal layer
  • 201 is the thin film transistor (TFT)
  • 202 is the pixel electrode
  • 203 is the gate signal! !
  • 204 is the source signal H
  • 206 is the opposite comfort
  • 207 is the color filter layer
  • 208 is the black matrix
  • 301 is the active matrix substrate
  • 302 is the shipping charge layer
  • 303 is the upper comforter
  • 304 is sealed Membrane
  • 401 is a scanning electrode
  • 402 is a thin film transistor (TFT)
  • 403 is data comfort
  • 404 is a capacitor
  • 405 is a thin film transistor (TFT)
  • 406 is an organic EL element.
  • the surface of the TFT's amorphous silicon film which has been devised for its affirmation, is silylated, and has an organic support.
  • F i g.1 (a) is a schematic plan view of one pixel unit of the active matrix ⁇ of the present invention
  • F g.1 (b) is a partial cross-sectional view including a TFT portion.
  • ⁇ on the surface of genius 1, the gate signal ⁇ H2 and the source signal ⁇ ! Fountain 3 is placed next to it, and TFT 4 force S is placed near the intersection.
  • TFT 4 has a goat 5, a source ⁇ ⁇ 6, a drain 3 ⁇ 4 ⁇ 7, a body layer 19 and a gate crane 20.
  • the surface of the TFT4 amorphous silicon film formed on the ingenuity 1 is silylated and a silylated portion of 8 forces S is formed.
  • the silylation force S is shown with the thickness S, but the thickness of the silylation is the force between the atoms of the force ⁇ O—S i- CH, which can be referred to as Silyli W1. It is impossible thickness.
  • An organic protective film 9 made of organic polymer is provided on the silylation unit 8 and is connected to the drain ⁇ 7 and the pixel consolation 11 through the contact hole 10 of the shelf protection word 9. Les.
  • TF ⁇ is one per pixel, but two or more may be formed if desired.
  • Patent Documents 1 and 2 are similar to those of the conventional active matrix, and their mouths are:
  • the silylation has only to occur at least on the surface of the amorphous silicon film of the TFT.
  • TFT Amorphous silicon film The surface refers to the surface of the TFT's monolithic silicon film.
  • the silyl group used for the silylation is not particularly limited, and examples thereof include a dimethylsilyl group, a trimethylsilyl group, a triethylsilyl group, a triisopropylpropylsilyl group, a t-butyldimethylsilyl group, a tert-butylene phenylsilyl group, and A triphenylsilyl group etc. can be mentioned.
  • trimethylsilyl group can be reversed (ie, trimethylsilylation).
  • silylation means that protons on the surface such as aged are replaced by silyl groups.
  • TFT amorphous silicon S When the surface of the silicon is silylated, the surface of the amorphous silicon film becomes hydrophobic, preventing moisture from entering between the surface of the amorphous silicon film and the surface. It is considered that an active matrix having excellent thermal properties can be obtained.
  • the machine guard is usually silylated.
  • examples of the material for forming the organic protective layer include: polyolefins such as polyethylene, polypropylene pyrene, and polybutene; moon-ring olefin polymers; talyl resins; polyimide resins; polysiloxane resins; Can be mentioned.
  • the moon-ring cyclic olefin polymer has a very low hygroscopic property and can be suitably used because it has a small frequency dependence force S of dielectric constant.
  • the thickness of the tree is usually 0.:! ⁇ 10 0 ⁇ , preferably 0.5 to 50 m, more preferably 0.5 to 30 / m.
  • the cyclic cyclic olefin polymer is a polymer obtained by polymerizing an alicyclic olefin monomer having a cyclic structure and a carbon-carbon combination, and having the monomer unit as a structural unit.
  • An example of a cyclic structure is the cycloalkaline cycloalkene ⁇ If structure.
  • the cyclic structure may be or may be a polycycle (fused polycycle, bridged ring, a combination thereof).
  • the number of carbon atoms constituting one unit of the cyclic structure is usually 4 to 30 pieces, preferably 5 to 20 pieces, and more preferably 5 to 15 pieces.
  • the alicyclic olefin polymer may have a monomer unit other than the alicyclic olefin monomer as a unit.
  • the ratio of the alicyclic olefin monomer units is suitably 1 if desired, but usually 30 to 100 weight 0, preferably 50 to: L 0% by weight, more preferably 70 to: L 0% by weight. Powerful display of the organic protective film obtained [ ⁇ life is excellent.
  • ItftBH is a highly polar polymer.
  • the ratio of polar ftS in the strong polymer is not particularly limited. In terms of the total number of moles of monomer units of the alicyclic polyolefin polymer, the ability to confirm the heat resistance etc.
  • Monore 0/0 preferably 5 0: 1 0 0 Monore 0/0, and more preferably to 7 0-1 0 0 mole 0/0 of the constituent monomer units.
  • ⁇ ⁇ ' ⁇ includes, for example, carboxyl group (hydroxycarbon group), alkoxycarbonyl group, dicanolepton ⁇ hydrate group (carbonyloxycarbonyl group), ⁇ (hydroxyl group), nitrile group, epoxy group And at least one group selected from the group consisting of an oxetanyl group and an imide group (hereinafter these are collectively referred to as “special '14 3 ⁇ 4”).
  • ⁇ (3 ⁇ 43 ⁇ 43 ⁇ 4 is water ⁇ 3 ⁇ 4
  • phenols such as a hydroxyphenol group, a hydroxyphenyl alkyl group, etc., and a group containing 3 ⁇ 4 ⁇ wisteria; a hydroxyalkyl group, a hydroxyalkoxy group, a hydroxyalkoxy group
  • Substituents containing alcohol groups such as canoleponyl groups, and the like, and hydroxymethoxy group, hydroxyethoxy groups, and the like.
  • ⁇ -phenyldicarboximide group there are phenols such as a hydroxyphenol group, a hydroxyphenyl alkyl group, etc., and a group containing 3 ⁇ 4 ⁇ wisteria
  • a hydroxyalkyl group a hydroxyalkoxy group
  • hydroxyalkoxy group a hydroxyalkoxy group
  • Substituents containing alcohol groups such as canoleponyl groups, and the like, and hydroxymethoxy
  • the lunar olefin olefin polymer may have 4 tons of i ⁇ S, or 2 or more, but preferably has a force S of 2 or more. Of these, it is more preferable to have both a canolepoxinole group and an imido group.
  • Examples of the alicyclic olefin polymers having tin self-characteristics 143 ⁇ 4 include those having a repeating structural unit represented by the following formula (I).
  • ⁇ is, respectively; and insects standing, 7i atom or - X n - R '(X is a methylene group, a divalent group such as a carbonyl group, n represents 0
  • R ′ may have a group, such as a methyl group, a benzyl group, a strong lpoxyl group, etc., an alkyl group having from 7 to 7 carbon atoms, an aromatic group S, or a special group.
  • ⁇ is R, a force feature -X n -R ', and m is 0-2.
  • the cyclic olefin olefin polymer having a specific property may be selected from a cyclic olefin monomer having a specific ⁇ ⁇ ⁇ 43 ⁇ 4, or an S cyclic olefin polymer having a specific characteristic and a corresponding cyclic cyclic olefin. It is obtained by polymerizing the monomer and other polymerizable monomers according to the mouth; and by hydrogenation if desired.
  • the alicyclic olefin monomer it may be covered with a monomer or other monomer.
  • the special monomer may be covered with the other monomer, and the special alicyclic olefin monomer may not have 4 to 40%.
  • alicyclic olefin monomers having specific arousal include, for example, 5-hydroxycarbonylbicyclo [2.2.1] hept-2-en, 5-methino-5hydroxycarbonylbicyclo [2.2.2. 1] Hept-2-ene, 5-force lupoxymethino 5-hydroxycanoleporubicyclo [2. 2. 1] Hept-2-ene, 8-methinole-8 hydroxycarbonyltetracyclo [4.4.0. I 2 ' 5 .
  • Cycloaliphatic olefin monomers with two canolepoxyl groups 5- (4-hydroxyphenenole) bicyclo [2.2.1] hept-2-ene, 5-methino-5- (4-hydroxyphenenole ) Bicyclo [2.
  • I 7 ' 10 Dode force-3-ene, 8-carboxymethino 8- (4-hydroxyphenol) tetracyclo [4.4.0.1 3 ⁇ 45 .
  • I 7 ⁇ 10 Dode force -Cycloaliphatic olefin monomers with one hydroxyphenol group such as 3-ene; N— (4-phenol) — (5-norbornene-2,3-dicanorepoxyimide), etc. N-g ⁇ f imide group-containing alicyclic olefin monomer; These monomers can be used as warworms or as a mixture of two or more.
  • Examples of other monomers that can be polymerized with the above cyclic olefin monomer include, for example, ethylene, propylene, 1_butene, 1-pentene, 1-hexene, 3-methino propyl, ten, 3_ Methino 1-pentene, 3-ethino 1-pentene, 4-methino 1-pentene, 4-methino 1-hexene,
  • -Olefin having 2 to 20 carbon atoms such as -ethino 1-hexene, 1-otaten, 1-decene, sen, 1-dodecene, 1-tetradecene, 1-hexadecene, 1-otatadecene, and 1-eicosene;
  • These monomers can be used as warworms or as a mixture of two or more.
  • the type 1 olefin polymer used in the present invention is a polystyrene measured by gel permeation chromatography (GPC) using tetrahydrofuran (THF) as a male! Weight of ⁇ : Weight: ⁇ Molecular weight (Mw) Force S1,000-1,000,000 Forced force, 5,000-5 0 0, 0 0 0 is more preferable, and 1 0, 0 0 0 to 2 5 0, 0 0 0 is even more preferable.
  • Mw weight average molecular weight of the alicyclic olefin polymer is 1,00 0 to 1,0 0 0,0 0 0, the heat balance, heat resistance, adhesion 14, surface flatness, etc. are balanced. A dull protective film can be formed.
  • the molecular weight distribution of alicyclic olefin polymers is the ratio of the weight average weight (Mw) to the number average molecular weight (M n) measured by gel permeation chromatography using THF (Mw / n).
  • the power is preferably 5 or less S, more preferably 4 or less, and even more preferably 3 or less.
  • the organic protective layer according to the present invention is preferably formed of an alicyclic olefin polymer, more preferably an alicyclic olefin polymer having an extreme thickness.
  • Process suitability I It is more preferable that the organic protective film is formed of a crosslinked, highly polar alicyclic polyolefin polymer, because it is excellent in life.
  • the active matrix of the present invention can be manufactured, for example, according to the description of the mouth described in References 1 and 2, but it is easy and efficient to operate.
  • silylating agent used to silylate the surface of the TFT formed in step (a) of the present invention examples include hexamethyldisilazane, dimethinoresic oral silane, Trimethylenochlorosilane, N-trimethinoresylinoreacetamide, N, O-bis (trimethy / resyl) acetamide, N-methino N-trimethylsilylacetoamide, N-methino
  • the surface of the amorphous silicon film and ⁇ ! Hexamethyldisilazane can be particularly preferably used because it is excellent in the effect of preventing water from adhering to the protective film and the adhesion at the interface between the two.
  • These siri / rays can be used as war worms or as a mixture of two or more.
  • the surface of the TFT amorphous silicon film formed on the substrate is converted with a silylating agent to silylate the surface.
  • the ⁇ is placed in the silylation processing chamber equipped with a hot plate, the array with the TF ⁇ opened (after the TF ⁇ is formed on the talisman) is separated from the hot plate, and the inside of the «3 ⁇ 4 Introduce the silylating agent vapor, heat the hot plate to bring the array substrate closer to the hot plate, and evenly diffuse the silylating agent vapor below 50 0 to introduce the silylating agent vapor. Stop the exhaust and remove the array 3 ⁇ 43 ⁇ 4 to the hot plate.
  • the vapor of the silylating agent is replaced with nitrogen to stop the silylated Si ⁇ ; Silylation proceeds during the worming of the array moth and the silylating agent vapor.
  • the concentration of the silylating agent 0.1 0 1 0 / 0-5 0.01% mosquitoes child Mashi Rere.
  • the entire surface of the array sickle including the surface of the TFT amorphous silicon film is silylated.
  • Delicate insects usually last for 1 minute or longer.
  • the surface of the TFT amorphous silicon film on the array can be silylated by, for example, using an array fiber and a small amount of silylating agent in a sealed container at room temperature and normal pressure. According to the last, only the surface of the TFT's amorphous silicon film is silly and humiliating.
  • a resin film organic preserving film is formed by using a resin on the surface of the silylated TFT T monomer monolithic silicon film.
  • Non-restricted raw resin thread is not particularly limited, but it is usually an alicyclic olefin polymer having a heel, « « ⁇ Xie's compound, and wisteria U
  • the force s containing s is preferably used.
  • Preferred examples of alicyclic olefin polymers having polar I4S include, for example, alicyclic olefin polymers having the characteristics of '14 3 ⁇ 4.
  • Preferred as a cross-linking agent for example, epoxy Bisphenol A type epoxy resin, Bisphenol F type epoxy resin, Fat, Phenolic nopolak type epoxy, Fat, Cresol Novolac type epoxy resin, Polyphenolic one Polyfunctional epoxy compounds such as le-type epoxies, t-fats, cyclic sebum epoxies, greaves, autsuki dalishidinole ether, and epoxy acrylate polymers.
  • WHi ⁇ ⁇ a compound that can absorb wisteria, such as ultraviolet rays and electrical springs, and cause chemistry
  • 1, 2 -naphthoquinonediazide-5- Quinonediazide sulfonic acid halides such as sulfonic acid chloride, 1,2-naphthoquinone diazide-4-sulfonic acid cucumberide, 1,2-benzoquinone diazide-5-sulfonic acid cucumberide, and 1,1,3-tris ( 2,5-Dimethino 4-hydroxyphenol) — 3-phenenolevronone, 4, 4, 1 [1-[4- [1- [4-Hydroxyphenyl] -1 -methylethyl] phenyl] ethylidene] bisphenol
  • photoacid generators such as ester compounds with non-phenolic compounds.
  • colloidal silica force s may be included in the spectacular yarn as well as other components commonly used in the mouth leakage sensitive raw resin yarn JJ3 ⁇ 4 #).
  • ⁇ ⁇ include monoalkylene glycol solvents, polyalkylene glycol solvents, monoalkylene glycol alkyl ester solvents, polyalkylene glycol alkyl ester solvents, monoalkylene glycol diesters, and polyalkylene glycol diester solvents. Can be mentioned.
  • the above-mentioned spoiled resin yarn is an example of Po, it may be a negative type.
  • Powerful compositions can be manufactured according to mouth application.
  • the solid content concentration of the raw resin yarn used for the removal can be properly determined in consideration of the necessary resin film thickness and application: removal, etc.
  • a force of weight% S is preferred.
  • the prepared sensitive resin yarn Jj » is usually preferably applied after removing foreign matters using a filter having a pore diameter of 0.1 to 5 ⁇ um.
  • the method for forming the resin film there is no particular limitation on the method for forming the resin film, and examples thereof include a film lamination method. As a result, a resin film is formed on the array coagulation b. If a silylated TFT amorphous silicon film is formed, a desired resin film is formed; h4 humiliation. The resin film is preferably formed on the entire surface of the array.
  • the tiff self-coating method is to apply a sensation 3 ⁇ 4
  • calorie heating For example, spraying, spin coating, roll coating, die coating, and doctor Method, recirculation method, bar coating method, screen printing method, etc.
  • the calorie fever separation can be adjusted according to the column of each component and the blending ratio, but is usually 30 to 150 ° C.
  • the caro heat enjoyment time can be selected according to the blending ratio of each component, but it is usually 0.5 to 90 minutes.
  • the calorie fever can be adjusted according to the type and mixing ratio of each component, but the calorie fever is usually 3 ° to 1550 ° C, and the calorie fever time is usually 0 5 to 90 minutes.
  • Film lamination can be performed using a laminator such as a pressure laminator, press, vacuum laminator, vacuum press, roll laminator and the like.
  • step (c) the obtained resin film is irradiated with active rays to form an apocalyptic pattern in the resin film, and then the developer pattern is made to manifest, thereby revealing the object pattern. Then, pattern the resin film.
  • the line is not particularly limited as long as it can activate the Sensitive Hi compound and can change the alkali solubility of the resin composition.
  • ultraviolet rays, g-line, i-line, etc. examples thereof include light beams such as ultraviolet rays having a single wavelength, KrF excimer laser light, and Arf excimer laser light; particle beams such as electron beams.
  • males that selectively irradiate these live rays in a pattern shape to form an apologetic pattern include ultraviolet rays, g-rays, i-rays, KrF excitations, etc.
  • Examples of the method include irradiating an optical spring such as a laser beam or an Ar F excimer laser beam through a mask pattern, and drawing with a particle beam such as an electron. After irradiating the live '[ ⁇ X-ray, if desired, the resin film can be processed at 6 0-1 30 for 1-2 minutes.
  • an optical spring such as a laser beam or an Ar F excimer laser beam
  • a particle beam such as an electron.
  • an aqueous solution of an alkaline compound can be used as a developing solution for developing and revealing an image pattern formed by active ray irradiation.
  • organic compounds such as ⁇ -sodium oxide are hydroxy and potassium-containing compounds such as tetramethylammonium hydroxide and tetraethylammonium hydroxide.
  • f3 ⁇ 4 can also be used. Al force re-watering night water! 3 ⁇ 4
  • As the body water; methanol, ethanol, etc.
  • 7J ⁇ soluble organic solvents can be used. Alkaline water rough night may be obtained by adding an appropriate amount of surface active IJ or the like. Examples of males that cause the developer to have a resin pattern having a simple pattern include paddle method, spray method, and dating method. Development is usually from 5 to 55 ° C, and development time is usually between 30 and 180 seconds.
  • the array fiber is removed to remove the present it residue from the surface, the surface and the surface 13. It may be rinsed by using a rinse solution such as.
  • the entire surface of the array sickle having the noni bi bi membrane may be irradiated with live rays, or simultaneously or simultaneously, the resin membrane may be heated.
  • the removal of Calo C include a method in which the array sickle is heated in a hot plate or “Pun.”
  • the heating t3 ⁇ 4t is usually from 100 ° C. to 300 ° C.
  • the resin film formed on the array can be cross-linked; depending on the type of cross-linking agent used, it can be selected appropriately.
  • Caro heat can be performed using, for example, a hot plate, “Pun, etc.” Usually, heating is preferably 1800 to 2500 ° C., and the calo heat time is the size of the resin film.
  • the age when using a hot plate is usually 5 to 60 minutes, and the bun is used: ⁇ is usually 30 to 90. A minute is preferred.
  • the caro heat can be performed in an inert gas atmosphere such as nitrogen, anoregon, helium, neon, xenon, krypton, or the like.
  • a hole pattern to be a contact hole is formed in the resin film.
  • ITO Indium Tin Oxide is formed on the shelf bag by sputtering, for example.
  • Is formed and patterned Is formed and patterned, and the TFT drain electrode and the pixel 3 ⁇ 4 are converted through the contact hole of the resin film.
  • ⁇ Turn at the same time by forming an alignment film, and forming an alignment film and performing an alignment treatment such as rubbing to obtain an active matrix 3 ⁇ 4f.
  • the flat display device of the present invention is characterized by comprising the active matrix stiffness of the present invention.
  • the flat display device of the present invention is an excellent flat display device with long, low consumption, and high contrast because it uses the example.
  • Specific examples of the device include an active matrix liquid crystal display device and an active matrix organic electroluminescence ( ⁇ ⁇ ⁇ L) display device.
  • the active matrix type liquid crystal display device is composed of a pair of 3 ⁇ 4s arranged to face each other with a liquid crystal material, a film-like liquid crystal, etc. interposed therebetween, and one of the pair of s3 ⁇ 4 is s3 ⁇ 4 This is a flat display device composed of the following active matrix examples.
  • Examples of the active matrix (referred to as “opposing male” hereinafter) disposed opposite to the active matrix include a color filter vine, a microlens, and the like.
  • the color filter material layer is provided on the pixel 113 ⁇ 41: in the active matrix, and the color filter is not provided in the opposite direction!
  • Fig. 2 shows a plan view of an active matrix type liquid crystal display device that can be made using the active matrix of the present invention
  • Fig. 3 shows a cross-sectional view taken along the line XY.
  • the active matrix 3 ⁇ 43 ⁇ 4 1 0 1 with the pixel turn 2 0 2 and the color filter 1 0 2 with the opposite comfort 2 0 6 face each other across the liquid crystal layer 1 1 0
  • the pixel is located in the opposite portion between each pixel comfort 2 0 2 and the opposite pixel 2 0 6.
  • a sheet material 10 3 force S is provided, and a pattern 1 0 5 is formed in the area between the surface area and the sheet material 10 3.
  • the color filter 3 ⁇ 43 ⁇ 4 1 0 2 is provided with an opposing comfort 2 06 force S on the color filter layer 2 0 7 having the black matrix 2 0 8, and an alignment film 1 1 1 force S is provided thereon. Talk to me.
  • the active matrix ⁇ 1 0 1 is supplied with a gate signal that provides a gate signal to sleep the TFT 2 0 1 as a switching element on the fungus, and the source signal is supplied to the spring 2 0 3 and the TFT 2 0 1.
  • the source code “Izumi 2 0 4” is set to beat each other.
  • TFT 2 0 1 force S is installed in the vicinity of the two-way " ⁇ fountain exchange" 3 ⁇ 4, and the pixel separation is 2 0 2 so as to partially overlap the two-line ⁇ !
  • the contact hole of the Aruki defensive film 1 0 4 (in the figure; the pixel comfort 2 0 2 and the drain ⁇ of the TFT 2 0 1 are connected.
  • An alignment film 1 1 1 is disposed on the top of the shock beam 1 0 4.
  • the gate signal line 2 0 3 and the source t spring 2 0 4 are formed so as to extend beyond the forehead region, and the gates are provided via the inputs »1 0 8 provided in the outer terminal region.
  • Signal 2 for TFT 2 0 1 ⁇ is input to signal 2 0 3 and the display data signal is input to source signal 1 spring 2 0 4.
  • Consolation pattern 1 0 5 force Organic f Dye protection film 1 0 4 outer shell: In addition, it is extended to the upper zone, and a signal from the sleep circuit is input.
  • the above liquid crystal display device can be manufactured according to the method described in Japanese Patent Laid-Open No. 2003-005215.
  • the key self-active matrix type organic electroluminescence (EL) display device means that each pixel power formed by the active matrix matrix arrangement of the present invention is at least one organic EL element and a ⁇ EL element for ⁇ . It has at least two TFTs.
  • the organic EL element is not particularly limited.
  • a force S formed between the positive layer 3 ⁇ 4 ⁇ ⁇ ⁇ serving as the anode and the electron input ⁇ serving as the positive layer S is formed (S ⁇ -A chain, a force layer and an electron transport layer and a force S are formed between a hole 3 ⁇ 4 ⁇ ⁇ ⁇ and an electron injection consol (S ⁇ - ⁇ 5 ⁇ , or a positive 3 ⁇ 4 ⁇ box
  • S ⁇ - ⁇ 5 ⁇ an electron injection consol
  • the electron 3 ⁇ 4 ⁇ ® ⁇ and the positive force [# transmission layer, light-emitting material layer, electron transport layer and the structure formed by DHS ⁇ , etc. S can be mentioned.
  • the device consists of holes injected from holes 3 ⁇ 4 ⁇ 3 ⁇ 43 ⁇ 4 (anode) and electrons 3 ⁇ 4 ⁇ ® ⁇ ⁇ (electrons generated from ⁇ are the generation layer and holes or electrons) transport layer interface, and TO light This is based on the principle of recombination within the material layer to emit light.
  • Fig. 4 shows a typical configuration example of the organic EL element in the organic EL display device of the present invention.
  • F i g organic EL device shown in .4 includes pixel ⁇ as an active matrix ⁇ Immm)] 301, 3 ⁇ 4 m 302, It consists of 303 forces. Further, a sealing film 304 force S is provided as the outermost layer.
  • the configuration of one pixel for a shelf EL display device usually requires at least two TFTs to synthesize the EL element for at least one organic EL element, that is, a breakdown transistor and a writing transistor. However, both transistors are omitted in the configuration example shown in FIG. These transistors are the same as the active matrix of the present invention.
  • Fig. 5 shows an example of the circuit on the active matrix antifriction of the present invention.
  • the voltage applied in sequence to 3 ⁇ 4 comfort 401 connected to the circuit is 7 planes.
  • the TFT 402 write transistor
  • the capacitor 404 is difficult to respond to the display signal from the data ®f3 ⁇ 4403 connected to the vertical I sleep circuit.
  • TFT405 ⁇ transistor
  • the above-mentioned organic EL display device is manufactured according to the method described in Japanese Patent Application Laid-Open No. 2002-333846, for example. Can be
  • This polymer 1A had a weight average weight of 3,200, a number average molecular weight of 1,900 and a weight distribution of 1.68.
  • the solution was taken out and filtered through a fluororesin filter with a pore size of 0.2 ⁇ to separate the activated carbon, and the ring-opening metathesis polymer 1 ⁇ ⁇ hydride 1 B containing B Filtration was carried out without any delay
  • the hydrogenated reaction containing hydride 1B obtained here had a concentration of 20.6% by weight of the solid content in the night, and 1 The yield of 98.1 parts by weight of hydrogen was obtained with a weight average molecular weight of 4, 43.
  • the average molecular weight of the maiden was 2,570, and the molecular weight distribution was 1.72.
  • the hydrogenation rate was 99.9%.
  • a gate is formed on the n + Si layer with a sprinkling device, and a chromium layer is formed in a 200 nm ridge, and the source ⁇ , the source signal line, and the drain are formed by photolithography. Then, an unnecessary n + Si layer between the source electrode and the drain electrode was removed to form a back channel, and an array cell with TFT force S formed on the glass substrate was obtained.
  • the resulting array £ K was silylated with a hot plate. After evacuating the interior of AK treatment 33 ⁇ 4 to H3 ⁇ 4, hexamethinoresilazane was introduced as a silylating agent, and hexamethyldisilazane vapor was treated at 50 ° C. After evenly diffusing within @ 3 ⁇ 4, array plate is removed with a hot plate.
  • the silylation was performed for 1 minute by heating to 85 ° C. Next! /, In-process hexamethyldisilazane with nitrogen, cool to room temperature, and include the amorphous silicon film surface of TFT, An array in which the entire surface was silylated (trimethylsilylated) was obtained.
  • pre-beta was performed at 90 ° C for 2 minutes using a hot plate to obtain a film thickness of 1.2 ⁇ m.
  • m resin films were formed. This resin film was irradiated with ultraviolet rays having a light bow at 3 65 nm of 5 mW / cm 2 in the air for 40 seconds through a mask of a hole pattern of 10 ⁇ mX 10 m.
  • the same measurement was performed after leaving the active matrix substrate in an atmosphere of 50 ° C. and 80% RH for 100 hours.
  • the leakage current was 1 X 10 13 AZ C m 2 , the threshold was 4 V, and there was no change.
  • Example 1 The surface obtained in Example 1 was subjected to silylation of the array, except that Atalyl resin [JSR Co., Ltd., Optoma I] was used instead of Sento Senjosei fiber 1D. In the same manner as in Example 1, he made an active matrix difficulty and made a statement.
  • Atalyl resin JSR Co., Ltd., Optoma I
  • the leakage current was 3 ⁇ 10—13 A / cm 2 and the threshold was 3 V.
  • the leakage current after leaving the temple in an atmosphere at 50 ° C and 80% RH was 1 X 1 (r 12 A / cm 2 , and the threshold direct voltage was 2 V.
  • Example 1 In the process of spin-coating the acrylic resin Sakuya [JSR Corp., Optoma I] without the silylation treatment, the array anti-reflection of the TFT force S formed on the glass intuition obtained in Example 1 was used. In the same manner as in Example 1, the same matrix as in Difficult Example 2 was used to create an active matrix, and evaluation was performed in the same manner as in Example 1.
  • Example 3 Except for the transition to the step of spin-coating the polyimide resin Gakuya Le Co., Ltd., Photo Nice] without silylation treatment of the TFT male formed on the glass substrate obtained in Example 1 In the same manner as in Example 3, the active matrix was applied, and the surface was processed in the same manner as in Example 1.
  • Example 1 the surface of the array formed with TF repulsive force S on the glass aging is silylated and then crosslinked, and the alicyclic olefin polymer with extreme wrinkles.
  • the active matrix support of Example 1 with a protective film formed on and the shelf protection is acrylic resin and polyimide resin. 3 ⁇ 4
  • Each active matrix substrate of Examples 2-3 is a long time under high temperature and humidity. It can be seen that it has practically superior performance even after being removed.
  • the active matrix substrate 3 ⁇ 4 of Comparative Example 1 in which the protective layer was formed of a crosslinked, crisp alicyclic olefin polymer without performing silylation of the surface of the array was It can be seen that the performance is inferior when compared with the silylated «Example 1 active matrix.
  • each active matrix in Comparative Examples 2 and 3 in which the surface was formed of acryl resin and polyimide resin without silylation of the surface of the array was large in leak, and should not be used as an active matrix. S I understand. Industrial applicability
  • the leakage is small, and the source ⁇ 3 ⁇ 4 drain interval rises linearly with respect to the increase of the gate electrode.
  • the power generation and the threshold HE are almost unchanged, an excellent active matrix type flat display device with long length, low consumption, and high contrast can be obtained.
  • an active matrix having excellent characteristics can be efficiently produced by a simple operation.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Mathematical Physics (AREA)
  • Computer Hardware Design (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

L'invention concerne un substrat de matrice active comprenant un matériau de base et un transistor à couches minces pourvu d'une couche mince de silicium amorphe disposée sur le matériau de base. Le substrat selon l'invention se caractérise en ce que la surface de silicium amorphe a été silylée et qu'une couche mince de protection organique est disposée sur la surface de la couche mince de silicium amorphe silylée. L'invention concerne également un procédé de fabrication de ce substrat de matrice active se caractérisant en ce qu'il consiste : à mettre la surface de la couche mince de silicium amorphe d'un transistor à couches minces en contact avec un agent de silylation pour silyler ladite surface ; à former une couche mince de résine au moyen d'une composition de résine sensible à un rayonnement sur la surface de la couche mince de silicium amorphe silylée ; et à appliquer un rayonnement actif sur la couche mince de résine pour former un motif d'image latente sur ladite couche, puis à mettre un révélateur en solution en contact avec cette couche mince de résine pour visualiser ce motif d'image latente afin de le reproduire sur la couche mince de résine.
PCT/JP2007/067092 2006-08-30 2007-08-27 Substrat de matrice active et procede de fabrication associe WO2008026750A1 (fr)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011077450A (ja) * 2009-10-01 2011-04-14 Fujifilm Corp 薄膜トランジスタ及び薄膜トランジスタの製造方法
JP2012114313A (ja) * 2010-11-26 2012-06-14 Nippon Zeon Co Ltd 半導体素子基板
JP2021028926A (ja) * 2019-08-09 2021-02-25 住友ベークライト株式会社 電子装置の製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1048607A (ja) * 1996-08-02 1998-02-20 Sharp Corp 表示素子用基板およびその製造方法並びにその製造装置
JP2004303770A (ja) * 2003-03-28 2004-10-28 Nippon Zeon Co Ltd 有機絶縁膜の形成方法、有機絶縁膜及び表示装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1048607A (ja) * 1996-08-02 1998-02-20 Sharp Corp 表示素子用基板およびその製造方法並びにその製造装置
JP2004303770A (ja) * 2003-03-28 2004-10-28 Nippon Zeon Co Ltd 有機絶縁膜の形成方法、有機絶縁膜及び表示装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011077450A (ja) * 2009-10-01 2011-04-14 Fujifilm Corp 薄膜トランジスタ及び薄膜トランジスタの製造方法
JP2012114313A (ja) * 2010-11-26 2012-06-14 Nippon Zeon Co Ltd 半導体素子基板
JP2021028926A (ja) * 2019-08-09 2021-02-25 住友ベークライト株式会社 電子装置の製造方法
JP7322580B2 (ja) 2019-08-09 2023-08-08 住友ベークライト株式会社 電子装置の製造方法

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