WO2008026750A1

WO2008026750A1 - Active matrix substrate and method for manufacturing the same

Info

Publication number: WO2008026750A1
Application number: PCT/JP2007/067092
Authority: WO
Inventors: Masahiro Hanmura; Takeyoshi Kato
Original assignee: Zeon Corporation
Priority date: 2006-08-30
Filing date: 2007-08-27
Publication date: 2008-03-06
Also published as: TW200826298A; JPWO2008026750A1

Abstract

This invention provides an active matrix substrate comprising a base material and a thin-film transistor with an amorphous silicon film provided on the base material. The active matrix substrate is characterized in that the amorphous silicon surface has been silylated, and an organic protective film is provided on the surface of the silylated amorphous silicon film. There is also provided a method for manufacturing the active matrix substrate, characterized by comprising the step of bringing the surface of an amorphous silicon film in a thin-film transistor formed on a base material into contact with a silylating agent to silylate the surface, the step of forming a resin film using a radiation-sensitive resin composition on the surface of the silylated amorphous silicon film, and the step of applying an active radiation to the resin film to form a latent image pattern in the resin film and then bringing a developing solution into contact with the resin film to visualize the latent image pattern to conduct patterning of the resin film.

Description

Description Active matrix ¾¾¾ and its manufacturing technology field

This work is about active, matrix manufacturing. More particularly, the present invention relates to an active matrix storehouse that can be manufactured by a simple process and has a high level of ifffi and a method for making the same. Background sickle

The active matrix is the gate signal ^! And source signal that are arranged orthogonal to each other on ¾K. ^ The pixel 亟 is placed near the intersection of the spring with a thin film transistor (τ F τ). Powerful traps are used in active matrix flat panel displays, which are noisy because each display pixel is individually controlled by a TFT (switching element). Compared to matrix type flat display devices, crosstalk is less likely to occur, making it suitable for high definition and large capacity display.

7 is an explanatory diagram of an example of a circuit on a conventional active matrix sickle. The TFT 14 as a switching element is placed near the intersection of the gate signal 1 2 and the source signal “^ spring 1 3” arranged orthogonally on the top. Applied to the gate 葡亟 15 Depending on mE, the amount of fluid flowing from the source ¾S 1 6 force to the drain consol 17 changes, and this change is passed through the contact hole to the pixel f 18. .

In the conventional active matrix example, a passivation film made of silicon nitride or the like is formed on the surface of the array formed with the TFT force S by a sputtering method, a vapor deposition method, or a CVD method, and the surface is increased due to the layer-like view. Many of them have a structure that is flattened and has a pixel consolation that is the drain of the TFT in the contact Honoré. For example, Patent Document 1 discloses an active matrix substrate having a passivation film made of Si N _x or sio ₂ and a flat film l (interlayer deception D) made of benzocyclobutene. In the production process of such active matrix sickle, it is necessary to form a self-passivation film in a vacuum, and there is a disadvantage that the equipment cost is high and the operation is;); On the other hand, in Literature 2, the first conspicuous view of siloxane resin consisting of siloxane resin between source pixel and wiring, source consol, source Bf spring, drain consolation and packed channel, A second active matrix consisting of acrylic resin is formed, and an active matrix is disclosed in which the TF チ channel is in contact with the Τ 層 layer. In the process of producing a powerful active matrix, there are two processes that form the interlacing of threads, and further simplification of the manufacturing process is desired.

[Reference 1] Japanese Patent Laid-Open No. 10-96 96 3

[Patent Document 2] Japanese Patent Laid-Open No. 11-3070 778 Disclosure of Invention

The present invention has been made for the purpose of producing an active matrix which can be produced by a simple process and which has a high lightning resistance. As a result of intensive efforts to solve the above-mentioned defects, the present inventors have formed a τ

The active matrix sickle formed by silylating the surface of the FT amorphous surface silicon film and then forming a protective film on it, has a small leakage temperament. Rough force between comforts ¾f Standing in a spring, and even after a long period of ¾cS under high temperature and humidity, it is found that the threshold value required to flow 4 The present invention has been made based on the findings.

That is, the present invention

(1) Production of active matrix substrate

(a) a step of silylating the surface of the amorphous silicon film of the thin film transistor formed on the age with a silylating agent;

(b) A step of forming a resin film on the surface of the silylated amorphous silicon film by using «clt 14 resin destruction, and

(c) The resulting resin film is irradiated with active | ¾W rays to form a fiery image pattern in the resin film, and then the image solution is made to manifest by exposing the image solution to the resin film. A process of patterning, an active matrix manufacturing method based on having

(2) An active matrix comprising thin film transistors having an amorphous silicon film formed on the basis of ingenuity, where the surface of the amorphous silicon film is silylated and the surface of the force silylated amorphous silicon film Has a shelf protection film on top ACTIVITY MATRIX ¾¾,

(3) The active matrix substrate according to | ίΠ5 (2), wherein the silylation is trimethylsilylation,

(4) The organic matrix is an active matrix according to (2) or (3), wherein the organic matrix is a film made of a cross-linked alicyclic olefin polymer having a pole.

(5) Preparation of active matrix according to (1) above, wherein the silylating agent is hexamethyldisilazane,

(6) The above-mentioned crushed raw resin yarn is composed of an alicyclic olefin polymer having a pole | 4¾, a «agent, a sensitizing compound, and O« lj (1) Or (5) the manufacturing method of the active matrix described in

(7) A flat display device having a paste as a result of having an active matrix as described in any of the keys (2) to (4).

Are shared with ί 共 ί.

In addition, according to the method for producing an active matrix difficulty of the present invention, an active matrix sample having a high level and high durability can be efficiently produced by a simple operation. Brief Description of Drawings

F i g.1 (a) is a schematic plan view of one pixel unit of the contribution of the active matrix of the present invention, F i g.1 (b) is a partial sectional view including a TFT portion, .2 is a plan view of an active matrix type liquid crystal display device using the active matrix according to the present invention, and FIG. 3 is an X of the active matrix type liquid crystal display device of FIG. — Y cross section F i g. (Part), F i g.4 is a diagram showing a typical configuration example of the organic EL element in the organic EL display device of the present invention, and F i g.5 is an active matrix organic FIG. 6 is an explanatory diagram of an example of a circuit on the active matrix of the present invention used in an electroluminescence display device. FIG. /ヽof Te, and ¾E gate慰亟, Darafu showing the relationship between the current source mm / drain亟間, F i _g .7 is an example illustration of a circuit on a conventional § active Matrigel Tsu + substrate . In the figure, reference numeral 1 is, 2 is a gate signal line, 3 is a source signal spring, 4 is a thin film transistor (TFT), 5 is a gate motion, 6 is a source electrode, 7 is a drain ®fl, and 8 is a silylated part. , 9 is an organic protective film, 10 is a contact hole, 11 is a pixel 12 is a gate signal, 13 is a source signal, 14 is a thin film transistor (TFT), 1 5 is Goto consolation, 16 is source consolation, 17 is drain electrode, 18 is pixel electrode, 19 is ^ ¾ f main layer, 20 is Goto thread color, 101 is active matrix ¾¾, 102 is color finer ¾K, 103 is the sole, 104 is ^) ¾¾ 薩, 105 is comfort. Turn, 108 is the input ί &, 110 is the nocturnal layer, 111 酉 self-directed film, 201 is the thin film transistor (TFT), 202 is the pixel electrode, 203 is the gate signal! !, 204 is the source signal H, 206 is the opposite comfort, 207 is the color filter layer, 208 is the black matrix, 301 is the active matrix substrate, 302 is the shipping charge layer, 303 is the upper comforter, 304 is sealed Membrane, 401 is a scanning electrode, 402 is a thin film transistor (TFT), 403 is data comfort, 404 is a capacitor, 405 is a thin film transistor (TFT), and 406 is an organic EL element. BEST MODE FOR CARRYING OUT THE INVENTION

In the active matrix of the present invention, the surface of the TFT's amorphous silicon film, which has been devised for its affirmation, is silylated, and has an organic support. F i g.1 (a) is a schematic plan view of one pixel unit of the active matrix の of the present invention, and F g.1 (b) is a partial cross-sectional view including a TFT portion. In 纖, on the surface of genius 1, the gate signal ^ H2 and the source signal ^! Fountain 3 is placed next to it, and TFT 4 force S is placed near the intersection. TFT 4 has a goat 5, a source 餅亟 6, a drain ¾ 亟 7, a body layer 19 and a gate crane 20. The surface of the TFT4 amorphous silicon film formed on the ingenuity 1 is silylated and a silylated portion of 8 forces S is formed. In this figure, the silylation force S is shown with the thickness S, but the thickness of the silylation is the force between the atoms of the force ^ O—S i- CH, which can be referred to as Silyli W1. It is impossible thickness. An organic protective film 9 made of organic polymer is provided on the silylation unit 8 and is connected to the drain 画素 7 and the pixel consolation 11 through the contact hole 10 of the shelf protection word 9. Les. In this H ^, TFΤ is one per pixel, but two or more may be formed if desired.

Each component of the active matrix of the present invention, that is, ¾t, Gate Shin "^ Izumi, Source Shin ^! Izumi, TFT, Oimu Elemental Consolation, etc. is described in, for example, Patent Documents 1 and 2 They are similar to those of the conventional active matrix, and their mouths are:

In the active matrix according to the present invention, the silylation has only to occur at least on the surface of the amorphous silicon film of the TFT. TFT Amorphous silicon film The surface refers to the surface of the TFT's monolithic silicon film. The silyl group used for the silylation is not particularly limited, and examples thereof include a dimethylsilyl group, a trimethylsilyl group, a triethylsilyl group, a triisopropylpropylsilyl group, a t-butyldimethylsilyl group, a tert-butylene phenylsilyl group, and A triphenylsilyl group etc. can be mentioned. Of these, the trimethylsilyl group can be reversed (ie, trimethylsilylation). Here, silylation means that protons on the surface such as aged are replaced by silyl groups. TFT amorphous silicon S When the surface of the silicon is silylated, the surface of the amorphous silicon film becomes hydrophobic, preventing moisture from entering between the surface of the amorphous silicon film and the surface. It is considered that an active matrix having excellent thermal properties can be obtained.

In the active matrix sickle of the present invention, the machine guard is usually silylated.

It is formed on the entire surface of the talisman so as to be on the surface of the amorphous silicon film of TFT.

In the present invention, examples of the material for forming the organic protective layer include: polyolefins such as polyethylene, polypropylene pyrene, and polybutene; moon-ring olefin polymers; talyl resins; polyimide resins; polysiloxane resins; Can be mentioned. Among them, the moon-ring cyclic olefin polymer has a very low hygroscopic property and can be suitably used because it has a small frequency dependence force S of dielectric constant. In the present invention, the thickness of the tree is usually 0.:! ˜10 0 μμηι, preferably 0.5 to 50 m, more preferably 0.5 to 30 / m. The cyclic cyclic olefin polymer is a polymer obtained by polymerizing an alicyclic olefin monomer having a cyclic structure and a carbon-carbon combination, and having the monomer unit as a structural unit. . An example of a cyclic structure is the cycloalkaline cycloalkene ^ If structure. In addition, the cyclic structure may be or may be a polycycle (fused polycycle, bridged ring, a combination thereof). The number of carbon atoms constituting one unit of the cyclic structure is usually 4 to 30 pieces, preferably 5 to 20 pieces, and more preferably 5 to 15 pieces.

The alicyclic olefin polymer may have a monomer unit other than the alicyclic olefin monomer as a unit. In the alicyclic olefin polymer, the ratio of the alicyclic olefin monomer units is suitably 1 if desired, but usually 30 to 100 weight ^0, preferably 50 to: L 0% by weight, more preferably 70 to: L 0% by weight. Powerful display of the organic protective film obtained [· life is excellent. ItftBH is a highly polar polymer. The ratio of polar ftS in the strong polymer is not particularly limited. In terms of the total number of moles of monomer units of the alicyclic polyolefin polymer, the ability to confirm the heat resistance etc. Monore ^_0/0, preferably 5 0: 1 0 0 Monore ^_0/0, and more preferably to 7 0-1 0 0 mole ^_0/0 of the constituent monomer units. There is no particular limitation on the number of polar groups ^ X in each constituent unit.

隨亟 '隨 includes, for example, carboxyl group (hydroxycarbon group), alkoxycarbonyl group, dicanolepton ^^ hydrate group (carbonyloxycarbonyl group), 瞧 (hydroxyl group), nitrile group, epoxy group And at least one group selected from the group consisting of an oxetanyl group and an imide group (hereinafter these are collectively referred to as “special '14 ¾”).

For example, as an example of which ^ (¾¾¾ is water ^ ¾, there are phenols such as a hydroxyphenol group, a hydroxyphenyl alkyl group, etc., and a group containing ¾τ wisteria; a hydroxyalkyl group, a hydroxyalkoxy group, a hydroxyalkoxy group Substituents containing alcohol groups such as canoleponyl groups, and the like, and hydroxymethoxy group, hydroxyethoxy groups, and the like. And Ν-phenyldicarboximide group.

The lunar olefin olefin polymer may have 4 tons of i ^ S, or 2 or more, but preferably has a force S of 2 or more. Of these, it is more preferable to have both a canolepoxinole group and an imido group.

Examples of the alicyclic olefin polymers having tin self-characteristics 14¾ include those having a repeating structural unit represented by the following formula (I).

. In [Formula (I), ~ is, respectively; and insects standing, 7i atom or - X _n - R '(X is a methylene group, a divalent group such as a carbonyl group, n represents 0 Or R ′ may have a group, such as a methyl group, a benzyl group, a strong lpoxyl group, etc., an alkyl group having from 7 to 7 carbon atoms, an aromatic group S, or a special group. And one or more of ~ is R, a force feature -X _n -R ', and m is 0-2. ] '

The cyclic olefin olefin polymer having a specific property may be selected from a cyclic olefin monomer having a specific † 亟 † 4¾, or an S cyclic olefin polymer having a specific characteristic and a corresponding cyclic cyclic olefin. It is obtained by polymerizing the monomer and other polymerizable monomers according to the mouth; and by hydrogenation if desired. In particular, in addition to the alicyclic olefin monomer, it may be covered with a monomer or other monomer. In addition, the special monomer may be covered with the other monomer, and the special alicyclic olefin monomer may not have 4 to 40%.

Examples of alicyclic olefin monomers having specific arousal include, for example, 5-hydroxycarbonylbicyclo [2.2.1] hept-2-en, 5-methino-5hydroxycarbonylbicyclo [2.2.2. 1] Hept-2-ene, 5-force lupoxymethino 5-hydroxycanoleporubicyclo [2. 2. 1] Hept-2-ene, 8-methinole-8 hydroxycarbonyltetracyclo [4.4.0. I ² ' ⁵ .

17.1. ] Dodeca ₃ -Yen, 8-Carboxymethino 8-Hydroxycarbonino Tracyclo [4.

4.0. I ² ' ^5. I ⁷ ' ¹⁰ ] Dode force-cycloaliphatic olefin monomers with one carboxyl group such as 3-ene; 5-exo-6-endo-dihydroxycarbo-rubicyclo [2 2.1] Hept-2-ene, 8-exo-9-endo-dihydroxycanoleboeltetracyclo [4.4.0. I ² ' ^5. I ⁷ · ¹⁰ ] dodeca-3-ene, bicyclo [2.2 . 1] hept - 2-E down - 5, 6 Jikarupon ^ things, Tetorashi black ^{^{[4.4.0 · 1 ¾5 1 7 '}} 10] Dodeka 3 -. E down - 8, Kisashiku port 9 Jikanorebon anhydride to, [6.

^{^{6. 1. I 3 '. 6 I}} 10 · 13 .0 ¾7 .0 9' 14] Heputadeka 4 E down -11 12 - Jikanorepon ^ ^ anhydride etc.

Cycloaliphatic olefin monomers with two canolepoxyl groups; 5- (4-hydroxyphenenole) bicyclo [2.2.1] hept-2-ene, 5-methino-5- (4-hydroxyphenenole ) Bicyclo [2.

2.1] Hept-2-ene, 5-carboxymethino 5- (4-hydroxyphenyl) bicyclo [2.

2.1] Hept-2-en, 8-methino 8_ (4-hydroxyphenenole) tetracyclo [4.4.0.

I ² ' ^5. I ⁷ ' ¹⁰ ] Dode force-3-ene, 8-carboxymethino 8- (4-hydroxyphenol) tetracyclo [4.4.0.1 ^¾5 . I ⁷ · ¹⁰ ] ^Dode force -Cycloaliphatic olefin monomers with one hydroxyphenol group such as 3-ene; N— (4-phenol) — (5-norbornene-2,3-dicanorepoxyimide), etc. N-g ^ f imide group-containing alicyclic olefin monomer; These monomers can be used as warworms or as a mixture of two or more.

Examples of other monomers that can be polymerized with the above cyclic olefin monomer include, for example, ethylene, propylene, 1_butene, 1-pentene, 1-hexene, 3-methino propyl, ten, 3_ Methino 1-pentene, 3-ethino 1-pentene, 4-methino 1-pentene, 4-methino 1-hexene,

4,4-Dimethino 1 "^ xene, 4,4-dimethino 1-pentene, 4-ethino! ^ 1-hexene, 3

-Olefin having 2 to 20 carbon atoms such as -ethino 1-hexene, 1-otaten, 1-decene, sen, 1-dodecene, 1-tetradecene, 1-hexadecene, 1-otatadecene, and 1-eicosene;

1,4 "^ xagen, 4-methino 1,4-bexagen, 5-methino 1,4-xagen, and 1,7-octagen, etc. These monomers can be used as warworms or as a mixture of two or more.

The type 1 olefin polymer used in the present invention is a polystyrene measured by gel permeation chromatography (GPC) using tetrahydrofuran (THF) as a male! Weight of ^: Weight: ^ Molecular weight (Mw) Force S1,000-1,000,000 Forced force, 5,000-5 0 0, 0 0 0 is more preferable, and 1 0, 0 0 0 to 2 5 0, 0 0 0 is even more preferable. When the weight average molecular weight (Mw) of the alicyclic olefin polymer is 1,00 0 to 1,0 0 0,0 0 0, the heat balance, heat resistance, adhesion 14, surface flatness, etc. are balanced. A dull protective film can be formed. The molecular weight distribution of alicyclic olefin polymers is the ratio of the weight average weight (Mw) to the number average molecular weight (M n) measured by gel permeation chromatography using THF (Mw / n). The power is preferably 5 or less S, more preferably 4 or less, and even more preferably 3 or less.

The organic protective layer according to the present invention is preferably formed of an alicyclic olefin polymer, more preferably an alicyclic olefin polymer having an extreme thickness. Process suitability I. It is more preferable that the organic protective film is formed of a crosslinked, highly polar alicyclic polyolefin polymer, because it is excellent in life.

'' The active matrix of the present invention can be manufactured, for example, according to the description of the mouth described in References 1 and 2, but it is easy and efficient to operate. The method, ie

( _& ) A step of translating the surface of the amorphous silicon film of TFT formed on the product with a silylating agent to silylate the surface;

(b) a step of forming a resin film on the surface of the silylated Achillus silicon film by raw resin destruction, and

(c) The obtained resin film is irradiated with an active tt¾tt line to form an apocalyptic pattern in the resin film, and then the moth pattern is revealed by worming the image solution, thereby patterning the resin film. It is preferred to have the following step.

Examples of the silylating agent used to silylate the surface of the TFT formed in step (a) of the present invention include hexamethyldisilazane, dimethinoresic oral silane, Trimethylenochlorosilane, N-trimethinoresylinoreacetamide, N, O-bis (trimethy / resyl) acetamide, N-methino N-trimethylsilylacetoamide, N-methino

N-trimethylsilane V-rugetylamine, N, 0-bis (trimethylsilyl) trifluoroacetamide, N-trimethylsilylimidazole, tetramethyldisilazane, t-butyldimethylmethyl silane, N-methino (t-butyldimethylsilinore ) Trifluoroacetamide,

Chloromethinorecimethylenochlorochloro, bromome Tildimethylk silane, otattashi / retrichlorosilane, N, Ν'-bis (trimethylsilylole) urea, Ν-trimethylsilino N, N'-diphenylurea, N, 0-bis (trimethylsilyl) carbamate, N, 0- Bis (trimethylsilyl) sulfamate, Trimethi / Resiri 7 Retrif Nororomethanesulfonic acid, etc. can be mentioned. Among these, the surface of the amorphous silicon film and ^! Hexamethyldisilazane can be particularly preferably used because it is excellent in the effect of preventing water from adhering to the protective film and the adhesion at the interface between the two. These siri / rays can be used as war worms or as a mixture of two or more.

In the method of the present invention, the surface of the TFT amorphous silicon film formed on the substrate is converted with a silylating agent to silylate the surface. If the 列 is placed in the silylation processing chamber equipped with a hot plate, the array with the TF Τ opened (after the TF 形成 is formed on the talisman) is separated from the hot plate, and the inside of the «¾ Introduce the silylating agent vapor, heat the hot plate to bring the array substrate closer to the hot plate, and evenly diffuse the silylating agent vapor below 50 0 to introduce the silylating agent vapor. Stop the exhaust and remove the array ¾¾ to the hot plate. After silylation at St in C, the vapor of the silylating agent is replaced with nitrogen to stop the silylated Si ^; Silylation proceeds during the worming of the array moth and the silylating agent vapor. In that case, the concentration of the silylating agent, 0.1 ₀ 1 ⁰ / _0-5 0.01% mosquitoes child Mashi Rere. According to the above method, the entire surface of the array sickle including the surface of the TFT amorphous silicon film is silylated. Delicate insects usually last for 1 minute or longer.

In addition to the above method, the surface of the TFT amorphous silicon film on the array can be silylated by, for example, using an array fiber and a small amount of silylating agent in a sealed container at room temperature and normal pressure. According to the last, only the surface of the TFT's amorphous silicon film is silly and humiliating.

Next, in the step (b), a resin film (organic preserving film is formed by using a resin on the surface of the silylated TFT T monomer monolithic silicon film.

ttHBit Thigh 1 · Non-restricted raw resin thread is not particularly limited, but it is usually an alicyclic olefin polymer having a heel, «« ^ Xie's compound, and wisteria U The force s containing s is preferably used.

Preferred examples of alicyclic olefin polymers having polar I4S include, for example, alicyclic olefin polymers having the characteristics of '14 ¾. Preferred as a cross-linking agent, for example, epoxy Bisphenol A type epoxy resin, Bisphenol F type epoxy resin, Fat, Phenolic nopolak type epoxy, Fat, Cresol Novolac type epoxy resin, Polyphenolic one Polyfunctional epoxy compounds such as le-type epoxies, t-fats, cyclic sebum epoxies, greaves, autsuki dalishidinole ether, and epoxy acrylate polymers. ^ WHi 匕 ^ (a compound that can absorb wisteria, such as ultraviolet rays and electrical springs, and cause chemistry), for example, 1, 2 -naphthoquinonediazide-5- Quinonediazide sulfonic acid halides such as sulfonic acid chloride, 1,2-naphthoquinone diazide-4-sulfonic acid cucumberide, 1,2-benzoquinone diazide-5-sulfonic acid cucumberide, and 1,1,3-tris ( 2,5-Dimethino 4-hydroxyphenol) — 3-phenenolevronone, 4, 4, 1 [1-[4- [1- [4-Hydroxyphenyl] -1 -methylethyl] phenyl] ethylidene] bisphenol Examples include photoacid generators such as ester compounds with non-phenolic compounds. For example, colloidal silica force s may be included in the splendid yarn as well as other components commonly used in the mouth leakage sensitive raw resin yarn JJ¾ #). Examples of ϋ が include monoalkylene glycol solvents, polyalkylene glycol solvents, monoalkylene glycol alkyl ester solvents, polyalkylene glycol alkyl ester solvents, monoalkylene glycol diesters, and polyalkylene glycol diester solvents. Can be mentioned.

Although the above-mentioned spoiled resin yarn is an example of Po, it may be a negative type. Powerful compositions can be manufactured according to mouth application. In the present invention, the solid content concentration of the raw resin yarn used for the removal can be properly determined in consideration of the necessary resin film thickness and application: removal, etc. A force of weight% S is preferred. The prepared sensitive resin yarn Jj »is usually preferably applied after removing foreign matters using a filter having a pore diameter of 0.1 to 5 ^ um.

There is no particular limitation on the method for forming the resin film, and examples thereof include a film lamination method. As a result, a resin film is formed on the array coagulation b. If a silylated TFT amorphous silicon film is formed, a desired resin film is formed; h4 humiliation. The resin film is preferably formed on the entire surface of the array.

The tiff self-coating method is to apply a sensation ¾ | ¾ 1 raw tree savory material onto the array, and then remove the solvent by calorie heating. For example, spraying, spin coating, roll coating, die coating, and doctor Method, recirculation method, bar coating method, screen printing method, etc. The calorie fever separation can be adjusted according to the column of each component and the blending ratio, but is usually 30 to 150 ° C. The caro heat enjoyment time can be selected according to the blending ratio of each component, but it is usually 0.5 to 90 minutes.

Ιίίϊ yourself Fuinoremu lamination method, a line [- raw 榭旨 @ Narubutsu, by heating grass 燥 after applying onto a resin film or a metal film? By removing the male give B stage film, then the B Laminate stage film on the array; The calorie fever can be adjusted according to the type and mixing ratio of each component, but the calorie fever is usually 3 ° to 1550 ° C, and the calorie fever time is usually 0 5 to 90 minutes. Film lamination can be performed using a laminator such as a pressure laminator, press, vacuum laminator, vacuum press, roll laminator and the like.

In step (c), the obtained resin film is irradiated with active rays to form an apocalyptic pattern in the resin film, and then the developer pattern is made to manifest, thereby revealing the object pattern. Then, pattern the resin film.

Live! The line is not particularly limited as long as it can activate the Sensitive Hi compound and can change the alkali solubility of the resin composition. For example, ultraviolet rays, g-line, i-line, etc. Examples thereof include light beams such as ultraviolet rays having a single wavelength, KrF excimer laser light, and Arf excimer laser light; particle beams such as electron beams. For example, males that selectively irradiate these live rays in a pattern shape to form an apologetic pattern include ultraviolet rays, g-rays, i-rays, KrF excitations, etc. Examples of the method include irradiating an optical spring such as a laser beam or an Ar F excimer laser beam through a mask pattern, and drawing with a particle beam such as an electron. After irradiating the live '[^ X-ray, if desired, the resin film can be processed at 6 0-1 30 for 1-2 minutes.

As a developing solution for developing and revealing an image pattern formed by active ray irradiation, an aqueous solution of an alkaline compound can be used. Examples of organic compounds such as τ-sodium oxide are hydroxy and potassium-containing compounds such as tetramethylammonium hydroxide and tetraethylammonium hydroxide. f¾ can also be used. Al force re-watering night water! ¾ As the body, water; methanol, ethanol, etc.

7J ^ soluble organic solvents can be used. Alkaline water rough night may be obtained by adding an appropriate amount of surface active IJ or the like. Examples of males that cause the developer to have a resin pattern having a simple pattern include paddle method, spray method, and dating method. Development is usually from 5 to 55 ° C, and development time is usually between 30 and 180 seconds.

After the resin film patterned in this way is formed on the array, if necessary, the array fiber is removed to remove the present it residue from the surface, the surface and the surface 13. It may be rinsed by using a rinse solution such as.

Furthermore, if desired, in order to inactivate the compound, the entire surface of the array sickle having the noni bi bi membrane may be irradiated with live rays, or simultaneously or simultaneously, the resin membrane may be heated. Examples of the removal of Calo C include a method in which the array sickle is heated in a hot plate or “Pun.” The heating t¾t is usually from 100 ° C. to 300 ° C.

In the present invention, it is preferable to carry out cross-linking of the resin after forming the pattern i oil film on the array sickle. The resin film formed on the array can be cross-linked; depending on the type of cross-linking agent used, it can be selected appropriately. Caro heat can be performed using, for example, a hot plate, “Pun, etc.” Usually, heating is preferably 1800 to 2500 ° C., and the calo heat time is the size of the resin film. Depending on the thickness, thickness, use β, etc., it is possible to select 131. For example, the age when using a hot plate is usually 5 to 60 minutes, and the bun is used: ^ is usually 30 to 90. A minute is preferred.

If desired, the caro heat can be performed in an inert gas atmosphere such as nitrogen, anoregon, helium, neon, xenon, krypton, or the like.

According to the above process (., A hole pattern to be a contact hole is formed in the resin film. After that, for example, according to the method of Ρ, ITO (Indium Tin Oxide is formed on the shelf bag by sputtering, for example. ) Is formed and patterned, and the TFT drain electrode and the pixel ¾ are converted through the contact hole of the resin film. ^ Turn at the same time by forming an alignment film, and forming an alignment film and performing an alignment treatment such as rubbing to obtain an active matrix ¾f.

The flat display device of the present invention is characterized by comprising the active matrix stiffness of the present invention. The flat display device of the present invention is an excellent flat display device with long, low consumption, and high contrast because it uses the example. Specific examples of the device include an active matrix liquid crystal display device and an active matrix organic electroluminescence (ルミネ L) display device. The active matrix type liquid crystal display device is composed of a pair of ¾s arranged to face each other with a liquid crystal material, a film-like liquid crystal, etc. interposed therebetween, and one of the pair of s¾ is s¾ This is a flat display device composed of the following active matrix examples. Examples of the active matrix (referred to as “opposing male” hereinafter) disposed opposite to the active matrix include a color filter vine, a microlens, and the like.

In addition, as an example of a liquid crystal display device composed of an active matrix and a color filter, the color filter material layer is provided on the pixel 11¾1: in the active matrix, and the color filter is not provided in the opposite direction! The liquid crystal display device of ^ and the liquid crystal display device of which the active matrix fiber pixel consolation is formed by the conductive color filter material, and the force filter is not provided on the opposite side.

Fig. 2 shows a plan view of an active matrix type liquid crystal display device that can be made using the active matrix of the present invention, and Fig. 3 shows a cross-sectional view taken along the line XY. In this H «, the active matrix ¾¾ 1 0 1 with the pixel turn 2 0 2 and the color filter 1 0 2 with the opposite comfort 2 0 6 face each other across the liquid crystal layer 1 1 0 The pixel is located in the opposite portion between each pixel comfort 2 0 2 and the opposite pixel 2 0 6. In the outer periphery of the display area consisting of difficulties, a sheet material 10 3 force S is provided, and a pattern 1 0 5 is formed in the area between the surface area and the sheet material 10 3. The color filter ¾¾ 1 0 2 is provided with an opposing comfort 2 06 force S on the color filter layer 2 0 7 having the black matrix 2 0 8, and an alignment film 1 1 1 force S is provided thereon. Talk to me. The active matrix 纖 1 0 1 is supplied with a gate signal that provides a gate signal to sleep the TFT 2 0 1 as a switching element on the fungus, and the source signal is supplied to the spring 2 0 3 and the TFT 2 0 1. The source code “Izumi 2 0 4” is set to beat each other. TFT 2 0 1 force S is installed in the vicinity of the two-way "^ fountain exchange" ¾, and the pixel separation is 2 0 2 so as to partially overlap the two-line ^! In addition, the contact hole of the Aruki defensive film 1 0 4 (in the figure; the pixel comfort 2 0 2 and the drain β of the TFT 2 0 1 are connected. An alignment film 1 1 1 is disposed on the top of the shock beam 1 0 4.

-On the other hand, the gate signal line 2 0 3 and the source t spring 2 0 4 are formed so as to extend beyond the forehead region, and the gates are provided via the inputs »1 0 8 provided in the outer terminal region. Signal 2 for TFT 2 0 1 β is input to signal 2 0 3 and the display data signal is input to source signal 1 spring 2 0 4. Consolation pattern 1 0 5 force Organic f Dye protection film 1 0 4 outer shell: In addition, it is extended to the upper zone, and a signal from the sleep circuit is input. The above liquid crystal display device can be manufactured according to the method described in Japanese Patent Laid-Open No. 2003-005215.

The key self-active matrix type organic electroluminescence (EL) display device means that each pixel power formed by the active matrix matrix arrangement of the present invention is at least one organic EL element and a ^ EL element for β. It has at least two TFTs.

The organic EL element is not particularly limited. For example, a force S formed between the positive layer ¾λ 餅亟 serving as the anode and the electron input β serving as the positive layer S is formed (S Η -A chain, a force layer and an electron transport layer and a force S are formed between a hole ¾λ 竈亟 and an electron injection consol (S Η-Β5 ©, or a positive ¾Λ box Between the electron ¾Λ® 亟 and the positive force [# transmission layer, light-emitting material layer, electron transport layer and the structure formed by DHS ^, etc. S can be mentioned. The device consists of holes injected from holes ¾Λ¾¾ (anode) and electrons ¾Λ®Τ 亟 (electrons generated from 麵 are the generation layer and holes or electrons) transport layer interface, and TO light This is based on the principle of recombination within the material layer to emit light.

Fig. 4 shows a typical configuration example of the organic EL element in the organic EL display device of the present invention.

F i _g organic EL device shown in .4 includes pixel慰亟as an active matrix纖Immm)] 301, ¾ m 302,

It consists of 303 forces. Further, a sealing film 304 force S is provided as the outermost layer. The configuration of one pixel for a shelf EL display device usually requires at least two TFTs to synthesize the EL element for at least one organic EL element, that is, a breakdown transistor and a writing transistor. However, both transistors are omitted in the configuration example shown in FIG. These transistors are the same as the active matrix of the present invention.

In the active matrix example of the present invention, pixel comfort as | 5 cm and TFT drain size are used. Fig. 5 shows an example of the circuit on the active matrix antifriction of the present invention. In this circuit, the voltage applied in sequence to ¾ comfort 401 connected to the circuit is 7 planes. The TFT 402 (write transistor) is turned on, and the capacitor 404 is difficult to respond to the display signal from the data ®f¾403 connected to the vertical I sleep circuit. TFT405 (麵 transistor) operates by the amount of light input to the capacitor 404, and is supplied to the shelf EL element 406. The machine EL element lights up. To 401 The above-mentioned organic EL display device is manufactured according to the method described in Japanese Patent Application Laid-Open No. 2002-333846, for example. Can be

Hereinafter, the present invention will be described in more detail with reference to examples. However, the present invention is not limited to these examples.

Production Example 1 (Manufacture of alicyclic olefin polymer)

8-carboxytetracyclo [4.4.0. I ² ' ^5. I ⁷ ' ¹⁰ ] Dode force-3 -en 60 parts by weight, Ν-Fuenino (5 _ norbornene-2, 3-dicarboxyimido) 40 parts by weight, 1,5-hexagen 2.8 parts by weight, (1,3-dimesitylimidazolidine-2-ylidene) (tricyclylhexylphosphine) benzylidene ruthenium dichloride 0.05 parts by weight and diethylene glycol 400 parts by weight of tilmethyl ether was charged into a nitrogen-substituted pressure-resistant glass reaction, and polymerized at 80 ° C. for 2 hours with stirring to obtain a polymerization S intense night containing ring-opening metathesis polymer 1A. The polymerization conversion rate was 99.9% or more. This polymer 1A had a weight average weight of 3,200, a number average molecular weight of 1,900 and a weight distribution of 1.68.

Next, 0.1 part by weight of bis (trisoxyhexoxyrephosphine) ethoxymethylenenorethene dichloride as a hydrogenated caro female was added to the polymerization reaction solution, and hydrogen was dissolved at a pressure of 4 MPa for 5 hours. After proceeding with the inlet reaction, add 1 part by weight of the active powder, and put it in the ^ "clave and stir 150. Hydrogen was dissolved at a pressure of 4 MPa for 3 hours at C. Next The solution was taken out and filtered through a fluororesin filter with a pore size of 0.2 μπι to separate the activated carbon, and the ring-opening metathesis polymer 1 水素 hydride 1 B containing B Filtration was carried out without any delay The hydrogenated reaction containing hydride 1B obtained here had a concentration of 20.6% by weight of the solid content in the night, and 1 The yield of 98.1 parts by weight of hydrogen was obtained with a weight average molecular weight of 4, 43. The average molecular weight of the maiden was 2,570, and the molecular weight distribution was 1.72. The hydrogenation rate was 99.9%.

The hydrogen hydride of the resulting hydride 1Β was discussed in a rotary evaporator, and the solid content concentration was 35 wt%, and the z hydride 1 C (an alicyclic ring having a carboxyl group as the pole '14 ¾) was obtained. Solution of olefin polymer). There was no change in yield, weight average molecular weight, number average molecular weight, and weight distribution before and after «. Example 1

Alicyclic O reflex in the polymer?辯夜(solid content of 3 5 weight ^_0/0) 1 0 0 parts by weight containing hydride 1 C obtained in Production Example 1, a multi having an alicyclic «t as a crosslinking agent Functional epoxy compound [Daisenorei Industrial Co., Ltd., EHP E 3 1 5 0 (product name), preferred about 2,700, epoxy 1 5] 2 5 parts by weight, (匕 ^) as 1, 1 , 3-Tris (2,5-Dimethyl Λ ^ 4-Hydroxyphenol) -3-phenylpropane (1 mole) and 1,2-naphthoquinonediazide-5-sulfonic acid chloride (2.5 monolayer) ) And Ishizuku compound 2 5 weight 15, 匕止 Ρ 方止斉 [] as (1, 2, 2, 6, 6-pentamethinore _ 4-piperi, Ginole / Tridecinore) 1, 2, 3, 4-Butanetetracanorepoxylate 5 parts by weight _y -glycidoxypropyltrimethoxysilane as an adhesion promoter and silicone-based surface active material IJ [Ranjo Gaku Kogyo Co., Ltd., KP 3 4 1 (Made by Name) 0.0 5 parts by weight were mixed and Kongo 撤半 further added 9 2 parts by Jeffrey Chi glycol E chill methyl ether and N- Mechino 2 _-pyrrolidone 8 parts by weight. The mixture became a homogeneous solution within 5 minutes. Seven days of the forehead were filtered through a polytetrafluoroethylene filter having a diameter of 0.45 zm to prepare a wire!

On glass glass [Corning, Co., Ltd., 1 7 3 7 (product name)], using a sputtering device, chromium was formed to 200 nm, patterned by photolithography, and gate ¾®, the gate signal "^ Izumi and the gate» ¾5 was formed. Next, the CVD system was used to cover the gate β and the gate ¾ 镍, and the silicon nitride material S A-Si layer of 25 O nm thickness, ^ "n + Si layer of Mick contact layer is 50 nm thick Then, the n + Si layer and the a-Si layer were patterned into island shapes. Furthermore, a gate is formed on the _n + Si layer with a sprinkling device, and a chromium layer is formed in a 200 nm ridge, and the source 亟, the source signal line, and the drain are formed by photolithography. Then, an unnecessary n + Si layer between the source electrode and the drain electrode was removed to form a back channel, and an array cell with TFT force S formed on the glass substrate was obtained.

The resulting array £ K was silylated with a hot plate. After evacuating the interior of AK treatment 3¾ to H¾, hexamethinoresilazane was introduced as a silylating agent, and hexamethyldisilazane vapor was treated at 50 ° C. After evenly diffusing within @ ¾, array plate is removed with a hot plate.

The silylation was performed for 1 minute by heating to 85 ° C. Next! /, In-process hexamethyldisilazane with nitrogen, cool to room temperature, and include the amorphous silicon film surface of TFT, An array in which the entire surface was silylated (trimethylsilylated) was obtained.

After spin coating the above-mentioned linear resin yarn 1D on the surface of the array male with the silylated surface, pre-beta was performed at 90 ° C for 2 minutes using a hot plate to obtain a film thickness of 1.2 μm. m resin films were formed. This resin film was irradiated with ultraviolet rays having a light bow at 3 65 nm of 5 mW / cm ² in the air for 40 seconds through a mask of a hole pattern of 10 ^ mX 10 m. Tsugire, in, 0.4 weight ^_0/0 tetramethyl § emissions monitor © beam hydroxide aqueous Nada a Yore Te,, 2 5 ° C 9 0 seconds development processing line Tsutanochi, 3 0 seconds folly ¾Κ When a contact hole pattern was formed by rinsing, a good pattern of more than 90% was obtained. Furthermore, a post-beta (cross-linking treatment was carried out using an open oven and heated at 230 ° C. for 15 minutes.

Moved the array formed by Akihito Ariki to Makama and used a mixed gas ratio of argon and oxygen of 100: 4) as the sputtering gas, pressure 0.3 Pa, DC output 4 0 OW Then, DC sputtering through the mask is performed so that the In-Sn-O-based amorphous transparent conductive layer (pixel matrix is formed and active matrix) I got a scythe.

Apply £ 20 V between the source and the drain of the active matrix obtained and apply it to the gate Change the ¾Ε to 20 to 30 V, and adjust the source and drain electrodes. The current flowing between them was measured using a manual prober and a semiconductor parameter analyzer (Agilent Neringu, 4156C). The results are shown in FIG. Leakage current is ^{^{IX 1 0- 13 A / cm 2}} , the threshold voltage was 4 V.

The same measurement was performed after leaving the active matrix substrate in an atmosphere of 50 ° C. and 80% RH for 100 hours. The leakage current was 1 X 10 ¹³ AZ C m ² , the threshold was 4 V, and there was no change.

Bell train 2

The surface obtained in Example 1 was subjected to silylation of the array, except that Atalyl resin [JSR Co., Ltd., Optoma I] was used instead of Sento Senjosei fiber 1D. In the same manner as in Example 1, he made an active matrix difficulty and made a statement.

Immediately after, the leakage current was 3 × ^10—13 A / cm ² and the threshold was 3 V. The leakage current after leaving the temple in an atmosphere at 50 ° C and 80% RH was 1 X 1 (r ¹² A / cm ² , and the threshold direct voltage was 2 V.

Male Example 3 «Except for spin coat coated with polyimide resin intense night [^: Les Co., Ltd., Photo Nice] instead of Senshi 14 Resin Yarn Castle 1 D on the surface silylated surface sickle obtained in Example 1 Performed active matrix in the same manner as male example 1, and made the statement 1¾.

Immediately after the leakage current was 7X10 " ¹³ A / cm ² and the threshold was 3 V. The leakage current after returning for 100 hours in an atmosphere of 50 ° C and 80% RH was 3X10" ¹² A / cm cm ² and the threshold voltage was 1.5 V.

Comparative Example 1

«M 1 except that the array され with SFT force S formed on the glass substrate obtained in Example 1 was transferred to the process of spin coating the raw resin destruction ID In the same way as the active matrix ¾f, the word? (Done face.

The leakage current immediately after ί 懷 was 2X1 CT ^U AZ cm ² and the threshold voltage was 2 V. 50. C, after standing 100 hours in an atmosphere of 80% RH leakage current is 3X10- ¹⁰ AZ C m ^2, the threshold value ¾E was OV. '' Comparative example 2

In the process of spin-coating the acrylic resin Sakuya [JSR Corp., Optoma I] without the silylation treatment, the array anti-reflection of the TFT force S formed on the glass intuition obtained in Example 1 was used. In the same manner as in Example 1, the same matrix as in Difficult Example 2 was used to create an active matrix, and evaluation was performed in the same manner as in Example 1.

The leak immediately after was 2X1 C ^ AZc m ² and did not work as an active matrix.

Comparative Example 3

Except for the transition to the step of spin-coating the polyimide resin Gakuya Le Co., Ltd., Photo Nice] without silylation treatment of the TFT male formed on the glass substrate obtained in Example 1 In the same manner as in Example 3, the active matrix was applied, and the surface was processed in the same manner as in Example 1.

Immediately after the leak, the leak was 5X1 O ^ A cm ² and did not operate as an active matrix S¾.

■ The results of Examples 1 to 3 and Comparative Columns 1 to 3 are shown in Table 1. Table 1

[Notes] A to X show the relative evaluation results of the examples and comparative examples by symbols.

[◎: Excellent, ○: Good, △: Acceptable, X: Impossible]

One indicates that measurement is not possible.

From Table 1 and Fig. 4, the surface of the array formed with TF repulsive force S on the glass aging is silylated and then crosslinked, and the alicyclic olefin polymer with extreme wrinkles. The active matrix support of Example 1 with a protective film formed on and the shelf protection is acrylic resin and polyimide resin. ¾ Each active matrix substrate of Examples 2-3 is a long time under high temperature and humidity. It can be seen that it has practically superior performance even after being removed.

On the other hand, the active matrix substrate ¾ of Comparative Example 1 in which the protective layer was formed of a crosslinked, crisp alicyclic olefin polymer without performing silylation of the surface of the array was It can be seen that the performance is inferior when compared with the silylated «Example 1 active matrix. In addition, each active matrix in Comparative Examples 2 and 3 in which the surface was formed of acryl resin and polyimide resin without silylation of the surface of the array was large in leak, and should not be used as an active matrix. S I understand. Industrial applicability

According to the active matrix of the present invention, the leakage is small, and the source β¾ drain interval rises linearly with respect to the increase of the gate electrode. However, since the power generation and the threshold HE are almost unchanged, an excellent active matrix type flat display device with long length, low consumption, and high contrast can be obtained. Further, according to the production of the active matrix of the present invention, an active matrix having excellent characteristics can be efficiently produced by a simple operation.

Claims

The scope of the claims

1 · Active matrix manufacturing method,

(a) a step of bringing the surface of the thin-film transistor silicon film of the thin film transistor formed on the ingenuity with a silylating agent and silinating the surface;

(b) Sensitive heel on the surface of silylated amorphous silicon film [4 Step of forming resin film with spoiled resin, and

(c) The resulting resin film is irradiated with an active || W line to form an image pattern in the resin film, and then the image solution is wormed to reveal the cocoon pattern to form a resin film. A process for patterning an active matrix.

2. An active matrix that has a thin film transistor with an amorphous silicon film that has been developed for the sake of ingenuity, and the amorphous silicon film has a silylated surface and is an amorphous silicon film. Active matrix with an organic protective film on the surface

3. The active matrix according to claim 2, wherein the silylation is trimethinoresilylation.

4. The active matrix according to claim 2 or 3, wherein the protective film is a cross-linked film made of a cycloaliphatic polyolefin polymer having a pole of 14¾.

5. The method for producing an active matrix according to claim 1, wherein the silinoleating agent is hexamethyldisilazane.

6. The composition according to claim 1 or 5, wherein the composition of ginger moonlight contains an alicyclic levine polymer having a polar group, a cross-linking agent, a radiation-sensitive compound, and 及 I. Made Active Matrix ¾¾.

7. 'Furthermore, claims 2 to 4! /, A flat display device that is provided with an active matrix ¾¾ as described in a deviation.