JPH1048607A - Substrate for display element and its production as well as apparatus for production therefor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate for display elements having an excellent adhe sion property between transparent conductive films and inorg. insulating films and org. insulating films and having high reliability. SOLUTION: The substrate for the display elements is formed by successively laminating gate electrodes 12, gate insulating films 13, semiconductor layers 14, channel protective layers 15, n<+> Si layers constituting source electrodes 16a and drain electrodes 16b transparent conductive films 17, 17', metallic layers 18, 18', interlayer insulating films 19 and pixel electrodes l on an insulative substrate 11. At this time, a photosensitive resin blended with a silane compd. is used for the interlayer insulating films 19. As a result, the substrate for the display elements having the excellent adhesion property between the interlayer insulating films 19 and the transparent conductive films in contact with the interlayer insulating films 19 and the inorg. insulating films is obtd.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a display element substrate used for OA (office automation) equipment such as a large display device, car navigation, laptop personal computer, etc., AV (audio visual) equipment and the like, and a method of manufacturing the same. And a manufacturing apparatus.

[0002]

2. Description of the Related Art In recent years, for example, large display devices, car navigation systems, laptop personal computers, and the like used as OA equipment and AV equipment have been required to be lighter, thinner, and have lower power consumption. Therefore, light and thin display elements such as liquid crystal display elements with low power consumption are being developed and applied as key devices in the coming multimedia society in various OA and AV equipment fields.

[0003] As such a liquid crystal display element, conventionally,
Thin film transistor (TFT: Th) as a switching element
in film transistor) is known. In a liquid crystal display device having such a configuration, a TN liquid crystal in which nematic liquid crystal molecules are twisted at about 90 ° C. in the vicinity of an electrode substrate is used.
(Twisted Nematic) display mode or STN (Super Twis) in which the nematic liquid crystal molecules are twisted by 180 ° C or more.
ted Nematic) The display mode is frequently used.

[0004]

In such a liquid crystal display device, the aperture ratio greatly relates to the display performance of the liquid crystal display device, such as light transmittance, power consumption, and viewing angle characteristics.

Therefore, in order to improve the aperture ratio, for example, a gate signal line and a source signal line are provided on an insulating substrate so as to intersect each other, and the vicinity of the intersection between the gate signal line and the source signal line is provided. A switching element is provided, and a gate signal line is connected to a gate electrode of the switching element, while the source signal line is connected to a source electrode, and visible above the switching element, the gate signal line and the source signal line. An active matrix substrate in which an interlayer insulating film made of a photosensitive organic thin film having a high transmittance and a pixel electrode made of a transparent conductive film are sequentially laminated in the light region, and an active matrix substrate in which the drain electrode of the switching element is connected to the pixel electrode, A gate signal line and a source signal line are provided on a conductive substrate so as to intersect with each other. A switching element is provided in the vicinity of the intersection, and a gate signal line is connected to a gate electrode of the switching element, while the source signal line is connected to a source electrode, and a drain electrode is connected via a connection electrode made of a transparent conductive film. A pixel electrode, and an interlayer insulating film made of a photosensitive organic thin film having a high transmittance in a visible light region is provided on the switching element, the gate signal line, the source signal line, and the connection electrode. A transmissive liquid crystal display element having an active matrix substrate provided on a film so that the pixel electrode at least partially overlaps at least one of a gate signal line and a source signal line is conceivable.

Hereinafter, for example, a schematic configuration of an active matrix substrate having the above configuration and a liquid crystal display device using the active matrix substrate will be described with reference to FIGS. 1 and 2 used in the present invention. .
FIG. 1 is a plan view showing a configuration of one pixel portion of the active matrix substrate having the above configuration, and FIG. 2 is a cross-sectional view of the active matrix substrate shown in FIG.

In the liquid crystal display device, a plurality of pixel electrodes 1 are provided in a matrix on an active matrix substrate as shown in FIG. Around these pixel electrodes 1, a gate signal line 2 as a scanning line and a source signal line 3 as a signal line are provided so as to be orthogonal (overlap) to each other at an outer peripheral portion of the pixel electrode 1. Have been. Further, a TFT 4 as a switching element connected to the pixel electrode 1 is provided at an intersection of the gate signal line 2 and the source signal line 3.
Further, the drain electrode of the TFT 4 is connected to the pixel electrode 1 via the connection electrode 5 and the contact hole 6, and is connected to one electrode 5a of the additional capacitance of the pixel via the connection electrode 5. On the other hand, the other electrode 7 of the additional capacitance
Are connected to a counter electrode (not shown) provided on the counter substrate.

As shown in FIG. 2, the active matrix substrate comprises a gate electrode 12, a gate insulating film 13 made of an inorganic insulating film, a semiconductor layer 14, and a channel protective layer formed on a transparent insulating substrate 11 made of glass or the like. 15, an n ⁺ Si layer serving as a source electrode 16a and a drain electrode 16b, transparent conductive films 17 and 17 ′ as first transparent conductive films, metal layers 18 and 18 ′, an interlayer insulating film 19 including an organic insulating film, and The second transparent conductive film serving as the pixel electrode 1 is formed sequentially. Then, as shown in FIGS. 1 and 2, the pixel electrode 1 is connected to the transparent conductive film 17 ′ serving as the connection electrode 5 through the contact hole 6 penetrating the interlayer insulating film 19.
Is connected to the drain electrode 16b of the TFT4.

Then, an alignment film (not shown) is formed on the pixel electrode 1, and a counter substrate (not shown) and the active matrix substrate are bonded to each other, and a liquid crystal (not shown) is introduced into a gap therebetween. A transmission type liquid crystal display element is formed.

As described above, in the above configuration, since the interlayer insulating film 19 is formed between the gate signal line 2 and the source signal line 3 and the pixel electrode 1, the gate signal line 2
In addition, the pixel electrode 1 can overlap the source signal line 3. Therefore, according to the above configuration, a transmission type liquid crystal display element having a high aperture ratio can be obtained.

As can be seen from the above description,
The cross-sectional structure of the active matrix substrate in the pixel portion in the liquid crystal display element having the configuration of
First transparent conductive film or inorganic insulating film / organic insulating film / second
And the cross-sectional structure near the seal portion in the liquid crystal display element is: insulating substrate / first transparent conductive film or inorganic insulating film / organic insulating film / sealing member.

However, in the above configuration, it is difficult to say that the adhesion of the organic insulating film to the transparent conductive film and the inorganic insulating film is good. The active matrix substrate or a liquid crystal display device using the active matrix substrate has an adhesive strength of 5 kg / cm ^{2 to} 8 kg / cm ^2.
For example, after storage for 18 hours in a pressure cooker test (PCT), peeling occurs between the transparent conductive film or the inorganic insulating film and the organic insulating film in the seal portion or the pixel portion. The PCT is a temperature of 1
This is a storage test at 21 ° C., a pressure of 2 atm, and a humidity of 99%.

Also, there is a problem in adhesion between the organic insulating film and a metal such as ITO (Indium Tin Oxide) constituting a transparent conductive film or a metal such as Ta or A1 constituting a metal layer. For this reason, for example, in the cleaning step after the opening of the contact hole, the organic insulating film
The cleaning liquid enters the interface between the transparent conductive film and the metal layer, causing a problem that the interlayer insulating film, which is the organic insulating film, is peeled off.

Further, when a pixel electrode is formed by patterning the transparent conductive film laminated on the organic insulating film,
The resin that forms the organic insulating film swells due to the resist stripping solution (for example, DMSO or the like), which also causes film peeling.

[0015] Such film peeling shortens the life of a display element such as a liquid crystal display element and leads to a decrease in reliability. Therefore, a display element substrate having excellent adhesion between an organic insulating film and a transparent conductive film or an inorganic insulating film which is in contact with the organic insulating film has been desired.

The present invention has been made in view of the above problems, and has as its object to provide excellent adhesion between an organic insulating film and a transparent conductive film or an inorganic insulating film that is in contact with the organic insulating film, and to improve reliability. For a display element, a method for manufacturing the same, and a manufacturing apparatus for the same, which can provide a display element having a high level of performance.

[0017]

According to a first aspect of the present invention, there is provided a substrate for a display element, wherein an inorganic insulating film (for example, a gate insulating film) and a transparent conductive film (for example, a connecting electrode and And / or a pixel electrode) and an organic insulating film (for example, an interlayer insulating film),
At least one of the inorganic insulating film and the transparent conductive film and the organic insulating film are adhered to each other with a silane compound.

According to a second aspect of the present invention, there is provided a substrate for a display element, wherein at least one of the inorganic insulating film and the transparent conductive film and the organic insulating film are made of a silane compound. It is characterized by being chemically bonded.

According to a third aspect of the present invention, there is provided a display element substrate according to the first or second aspect, wherein the inorganic insulating film, the transparent conductive film, and the organic film are provided. At least one film selected from insulating films is surface-treated with a silane compound.

According to a fourth aspect of the present invention, there is provided a display element substrate according to any one of the first to third aspects, wherein the organic insulating film is formed of a material. It is characterized by containing a silane compound.

According to a fifth aspect of the present invention, there is provided a display element substrate according to any one of the first to fourth aspects, wherein the silane compound is It is characterized in that it is at least one compound selected from the group consisting of a silane coupling agent, silazane, chlorosilane and alkoxysilane.

According to a sixth aspect of the present invention, there is provided a method of manufacturing a substrate for a display element, the method comprising: an inorganic insulating film (eg, a gate insulating film); a transparent conductive film (eg, a connection electrode); At least one kind of film selected from insulating films (for example, interlayer insulating films) is treated with a silane compound.

According to a seventh aspect of the present invention, there is provided an apparatus for manufacturing a substrate for a display element, comprising: a substrate surface treatment means having a chamber provided with an inlet through which a gas containing a silane compound is introduced; (E.g., a silane compound processing apparatus).

According to the above configuration, at least one film selected from the inorganic insulating film, the transparent conductive film, and the organic insulating film is treated with the silane compound, so that the organic insulating film and the organic insulating film Adhesion (adhesion strength) between the inorganic insulating film and / or the transparent conductive film that comes in contact with the substrate is improved.

As a result, a highly reliable display element substrate having excellent adhesion between the organic insulating film and the transparent conductive film or the inorganic insulating film in contact with the organic insulating film can be provided. The display element substrate is remarkably excellent in adhesion between the transparent conductive film or the inorganic insulating film and the organic insulating film. For example, the display element substrate, or a display element using the display element substrate is heated at a temperature. Even when stored for 24 hours under the conditions of 121 ° C., a pressure of 2 atm, and a humidity of 99%, the transparent conductive film, the inorganic insulating film, and the organic insulating film in the pixel portion or the seal portion when a display element is formed. No film peeling occurs.
Also, when the display element substrate is immersed in an organic solvent, the organic insulating film does not swell and peel off.

Further, it is more preferable that the organic insulating film contains a silane compound, since the number of treatments can be reduced as compared with the case where the film is surface-treated by applying a silane compound, for example.

Further, by using the above-mentioned manufacturing apparatus, for example, an inorganic insulating film or a transparent conductive film constituting a display element substrate,
The silane compound can be efficiently attached to the surface of the organic insulating film. By attaching the silane compound to the surface of the inorganic insulating film or the transparent conductive film in this manner, adhesion between the transparent conductive film or the inorganic insulating film and the organic insulating film laminated on the transparent conductive film or the inorganic insulating film is obtained. And a highly reliable display element substrate can be provided.

[0028]

DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention will be described below with reference to FIGS.

First, the schematic structure of an active matrix substrate as a display element substrate and a liquid crystal display element as a display element using the active matrix substrate in this embodiment, together with a manufacturing method, will be described with reference to FIGS. This will be described with reference to FIG.

FIG. 1 shows the active matrix substrate.
As shown in the figure, a plurality of pixel electrodes 1 are provided in a matrix. Then, around these pixel electrodes 1,
A gate signal line 2 as a scanning line and a source signal line 3 as a signal line are provided so as to be orthogonal (overlap) with each other at the outer peripheral portion of the pixel electrode 1. A thin film transistor (TFT) serving as a switching element connected to the pixel electrode 1 is provided at an intersection of the gate signal line 2 and the source signal line 3.
4 are provided. A gate signal line 2 is connected to a gate electrode of the TFT 4, and a scanning signal is input from the gate signal line 2 to the gate electrode. A source signal line 3 is connected to a source electrode of the TFT 4, and a data signal is input from the source signal line 3 to the source electrode. Furthermore, TFT
The drain electrode 4 is connected to the pixel electrode 1 via the connection electrode 5 and the contact hole 6, and is connected to one electrode 5a of the additional capacitance of the pixel via the connection electrode 5. On the other hand, the other electrode 7 of the additional capacitance is connected to a counter electrode (not shown) provided on the counter substrate.

When forming the active matrix substrate, first, as shown in FIG. 1, the gate signal lines 2 arranged in parallel with each other and the additional capacitance electrode 7 are formed on the transparent insulating substrate 11. To form At the same time as the gate signal line 2, a gate electrode of the TFT 4 is formed.

As shown in FIG. 2, the above-mentioned TFT 4 has a gate electrode 1 on a transparent insulating substrate 11 made of glass or the like.
2. Gate insulating film 13 made of inorganic insulating film, semiconductor layer 1
4. The channel protection layer 15, the n ⁺ Si layers to be the source electrode 16a and the drain electrode 16b are sequentially laminated by a known method.

In the above configuration, the gate electrode 12 is connected to the gate signal line 2 shown in FIG. 1, and the gate insulating film 13 is provided on the insulating substrate 11 so as to cover the gate electrode 12. . The semiconductor layer 14 is provided on the gate insulating film 13 so as to overlap the gate electrode 12 with the gate insulating film 13 interposed therebetween, and a channel protection layer 15 is provided on the center of the semiconductor layer 14. . The n ⁺ Si layer is provided on the gate insulating film 13 so as to surround both ends of the channel protection layer 15 and the semiconductor layer 14 in a state of being divided on the channel protection layer 15.

On one end of the drain electrode 16b, which is one of the n ⁺ Si layers divided on the channel protective layer 15 of the TFT 4, a transparent conductive film 17 ′ as a first transparent conductive film is formed.
And a metal layer 18 ′, and the transparent conductive film 17 ′ is extended to connect the drain electrode 16 b to the pixel electrode 1 and to become the connection electrode 5 connected to one electrode 5 a of the additional capacitor. I have. On the other end of the source electrode 16a, which is the other n ⁺ Si layer divided on the channel protective layer 15, a transparent conductive film 17 serving as the source signal line 3 and a metal layer 18 are provided. .

In the present embodiment, as described above, the source signal line 3 has a two-layer structure including the transparent conductive film 17 and the metal layer 18. The above structure is effective in that the electrical connection is maintained by the transparent conductive film 17 even if a part of the metal layer 18 has a defect, so that disconnection of the source signal line 3 can be prevented.

On the TFT 4, the gate signal line 2, the source signal line 3, and the connection electrode 5, an interlayer insulating film 19 made of an organic insulating film is formed. And
A contact hole 6 is formed on connection electrode 5 so as to penetrate through interlayer insulating film 19. When forming the contact hole 6 in the active matrix substrate, first, for example, a photosensitive acrylic resin is used as the material of the interlayer insulating film 19 by using the TFT 4, the gate signal line 2, the source signal line 3, and the connection electrode 5. A film having a thickness of 3 μm is formed thereon by, for example, a spin coating method. Next, the acrylic resin is exposed according to a desired pattern, and is developed with an alkaline solution. Thereby, only the exposed portions of the interlayer insulating film 19 are etched by the alkaline solution, and the contact holes 6 penetrating the interlayer insulating film 19 are formed. Subsequently, a pixel electrode 1 is formed on the interlayer insulating film 19 by forming a transparent conductive film by sputtering and patterning.

As shown in FIGS. 1 and 2, the pixel electrode 1 is connected to the TFT by a transparent conductive film 17 ′ serving as the connection electrode 5 through a contact hole 6 penetrating the interlayer insulating film 19.
4 is connected to the drain electrode 16b. Then, an alignment film (not shown) is further formed on the pixel electrode 1 of the active matrix substrate.

Through the above steps, the TFTs 4 as switching elements are arranged in a matrix, and the gate signal lines 2 for supplying scanning signals to the TFTs 4 and the source signal lines 3 for supplying data signals to the TFTs 4 are formed orthogonal to each other. An active matrix substrate can be produced.

According to the above configuration, the interlayer insulating film 19 is
Since it is formed between the gate signal line 2, the source signal line 3, and the pixel electrode 1, the aperture ratio can be improved. In addition, the pixel electrode 1 can overlap the gate signal line 2 and the source signal line 3. This shields the electric field caused by the signal line,
Poor liquid crystal alignment can be suppressed. Further, since the connection electrode 5 connecting the drain electrode 16b and the pixel electrode 1 is formed of a transparent conductive film, the aperture ratio can be further improved.

Further, the active matrix substrate is
A liquid crystal display (not shown) is formed by laminating a black matrix, a color filter, a counter electrode, and an alignment film on the surface of the transparent insulating film substrate in order, and bonding the liquid crystal (not shown) to a gap therebetween. An element is formed.

In the active matrix substrate thus obtained, the sectional structure in the pixel portion is, for example, insulating substrate 11 / transparent conductive film 17 'or gate insulating film 13 / interlayer insulating film 19 / pixel electrode 1 /. An alignment film,
The cross-sectional structure near the seal portion when forming the liquid crystal display element is the insulating substrate 11 / the transparent conductive film 17 'or the gate insulating film 13 / the interlayer insulating film 19 / the seal member.

In the present invention, the material of the interlayer insulating film 19 is preferably a photosensitive polymer. By using a photosensitive polymer as the resin constituting the interlayer insulating film 19, the patterning step can be performed only by exposure when forming the contact hole 6, so that the manufacturing step can be simplified. In the above active matrix substrate, the thickness of the interlayer insulating film 19 is
Preferably, the thickness is 1.5 μm or more. In the above configuration, since the pixel electrode 1, the interlayer insulating film 19, and the TFT 4 serving as a switching element form a parasitic capacitance, the thickness of the interlayer insulating film 19 is set to 1.5 μm or more to reduce the parasitic capacitance. It becomes possible. As a result, when a liquid crystal display element is formed using the above configuration, good display quality can be obtained.

The photosensitive polymer used in the present invention is preferably transparent in the visible light region, and its light transmittance is preferably 90% or more in the visible light region. The photosensitive polymer is not particularly limited, but may be an epoxy resin, a phenol resin,
Urethane resin, polyimide, polyester, rubber, diallyl phthalate resin, polypropylene, EPDM (ey
hlene propylene diene methylene) resin, melamine resin, ABS (acrylonitrile butadiene styrene) resin,
It is preferably at least one resin selected from the group consisting of vinyl chloride-based photosensitive polymers.

When the photosensitive polymer is composed of a photosensitive agent and a base polymer, examples of the negative type base polymer include chloromethylated polystyrene, chloromethylated poly (α-methylstyrene), and poly ( Chloro-α-methylstyrene), polychloromethylstyrene, polyhalogenostyrene, and other styrene-based polymers, and epoxy acrylate resins. Also,
Examples of the positive type base polymer include polyglycidyl methacrylate and polymethyl methacrylate. Examples of the positive photosensitive agent include naphthoquinonediazide, and examples of the negative photosensitive agent include diazonium salt compounds. Among the above photosensitive polymers, an epoxy acrylate resin, polyglycidyl methacrylate, and styrene-based polymer that are transparent in the visible light region are preferable.

Even if the photosensitive polymer constituting the interlayer insulating film 19 is colored, after the photosensitive polymer is patterned into an arbitrary shape, for example, the photosensitive agent used for the photosensitive polymer is removed. By irradiating with ultraviolet rays, the photosensitive agent can be decolorized. This allows
The transmittance of the interlayer insulating film 19 in the visible light region can be improved.

The gate insulating film 13 is made of S
iNx (silicon nitride film) is preferable.
-As 17 'and the pixel electrode 1, ITO is preferable.

When laminating the gate insulating film 13 and the transparent conductive films 17 and 17 ′ or the interlayer insulating film 19, the gate insulating film 13 and the transparent conductive films 17 and 17 ′ are stacked.
17 'or the interlayer insulating film 19 is treated with a silane compound.

The silane compound used in the present invention is not particularly limited, but is preferably at least one compound selected from the group consisting of a silane coupling agent, silazane, chlorosilane and alkoxysilane.

The silane coupling agent used in the present invention is represented by the general formula (1)

[0050]

Embedded image

(Wherein X represents a functional group that reacts with an organic material, and R represents a hydrolyzable functional group that reacts with an inorganic material). And plays an intermediate role in adhesion between the organic material interface and the inorganic material interface.

The functional group represented by X is not particularly limited as long as it is a functional group that reacts with an organic material. Specifically, for example, an amino group, a vinyl group, an epoxy group, Examples thereof include a mercapto group, a glycidoxy group, a methacryl group, and a chloro group.

The hydrolyzable functional group represented by R is not particularly limited as long as it is a functional group that reacts with an inorganic material. Specifically, for example, an alkoxy group, Chloro group and the like. Among them, a methoxy group and an ethoxy group are particularly preferable.

Examples of the silane coupling agent include, for example, β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane, N-β-aminoethyl −
Examples thereof include γ-aminopropyltrimethoxysilane and γ-aminopropyltriethoxysilane, but are not particularly limited.

The silane coupling agent can be suitably used for treating the surface of the gate insulating film 13 or the transparent conductive films 17 and 17 ′. Particularly effective in improving the adhesiveness to 13 or the transparent conductive films 17 and 17 '.

Examples of the silazane include, but are not limited to, disilazane, trisilazane, and hexamethyldisilazane.

Examples of chlorosilanes other than the compounds exemplified as the silane coupling agent include, for example, trimethylchlorosilane, ethyltrichlorosilane, methylchlorosilane, methyldichlorosilane, dimethyldichlorosilane, methyltrichlorosilane, tetramethylsilane, trichlorosilane, ethylchlorosilane. Dichlorosilane, diethyldichlorosilane, triethylchlorosilane, ethyl-n-propyl-dichlorosilane, ethylisobutyl-dichlorosilane, di-n-propyl-dichlorosilane, n-propyl-trichlorosilane, di-isopropyldichlorosilane, di-n -Butyl-dichlorosilane, n-butyl-
Trichlorosilane, di-t-butyl-dichlorosilane,
Phenyldichlorosilane, phenyltrichlorosilane,
Examples include diphenyldichlorosilane, but are not particularly limited.

Examples of the alkoxysilane other than the compounds exemplified as the silane coupling agent include, for example,

[0059]

Embedded image

The polyether trimethoxysilane represented by the following formula, n-butyltrimethoxysilane, dimethyldiethoxysilane, triethoxysilane, trimethoxysilane, trimethylmethoxysilane, trimethylethoxysilane and the like are exemplified, but there is no particular limitation. Not something.

One of these silane compounds may be used alone, or two or more of them may be used as a mixture. Among these silane compounds, compounds having a long-chain hydrocarbon group such as an alkyl group or a dialkyl group or a polyether group and having an alkoxy group (particularly, a methoxy group or an ethoxy group) are preferable. Is particularly preferred.

The gate insulating film 1 made of the above silane compound
3. In the case of treating the transparent conductive films 17 and 17 ′ and the interlayer insulating film 19, a material constituting each of the above-described films, a treatment method, a silane compound to be used depending on wettability to the film, and the like may be appropriately set. .

In the present invention, a treatment method for treating at least one kind of film selected from the gate insulating film 13, the transparent conductive films 17 and 17 ', and the interlayer insulating film 19 with a silane compound is not particularly limited. But not
For example, (i) a method of blending a silane compound with a resin for forming the interlayer insulating film 19, and (ii) a method of modifying the surface of the gate insulating film 13 or the surfaces of the transparent conductive films 17 and 17 ′ with the silane compound. Various methods can be used.

When the method (ii) is adopted,
Applicable film (for example, gate insulating film 13, transparent conductive film 17)
After laminating 17 ′) and before proceeding to the next step, the corresponding film may be treated with a silane compound or the interlayer insulating film 1
Before laminating 9, the surface of the gate insulating film 13 in contact with the interlayer insulating film 19 and the surfaces of the transparent conductive films 17 and 17 'may be subjected to a treatment with a silane compound.

First, the method (i) will be described.
When a silane compound is blended with the resin for forming the interlayer insulating film 19, the resin and the silane compound are mixed, and the mixture is mixed with the TFT 4, the gate signal line 2, the source What is necessary is just to apply on the signal line 3 and the connection electrode 5.

The amount of the silane compound used depends on the type of the silane compound used, but is in the range of 0.01% by weight to 10% by weight based on the resin (organic material) constituting the interlayer insulating film 19. Preferably, there is. The amount of the silane compound used, that is, the blend concentration with respect to the resin, is appropriately set so that the adhesiveness is most improved within the above range according to the type of the film adjacent to the interlayer insulating film 19 and the type of the silane compound. You.

The method (i) is a method for simply and easily manufacturing the active matrix substrate because the method of use is simple and easy to incorporate into the manufacturing process.
In the method (i), the interlayer insulating film 19 and the gate insulating film 13 in contact with the interlayer insulating film 19 can be formed only by blending a silane compound into the interlayer insulating film 19 without changing the current process. Adhesion with the transparent conductive films 17 and 17 ′ and the pixel electrode 1 can be improved. Further, peeling of the interlayer insulating film 19 at the interface between the interlayer insulating film 19 and the metal layer 18 can be suppressed.

The silane compound used when the method (i) is employed includes an interlayer insulating film 19, a gate insulating film 13 in contact with the interlayer insulating film 19, and a transparent conductive film 17.
17 ′ and the polyether trimethoxysilane represented by the above general formula (2) are particularly preferable since the adhesion to the pixel electrode 1 can be improved at the same time.

Next, the method (ii) will be described.
Examples of the method (ii) include a primer method and a gas treatment method. A method in which the silane compound is mixed with an appropriate solvent and applied to the surface of the gate insulating film 13 or the surfaces of the transparent conductive films 17 and 17 ′ using, for example, a spin coater or the like, followed by drying is a primer method. A gas treatment method is a method in which a solution containing the gas is sprayed on the surface of the gate insulating film 13 or the surfaces of the transparent conductive films 17 and 17 ′ with a gas such as dry air or nitrogen gas.

Examples of the solvent include water, alcohol, an aqueous acetic acid solution (concentration: 0.01% by weight to 0.1% by weight), toluene, xylene, ethyl acetate, methyl ethyl ketone, acetone and the like. The solvent is not particularly limited as long as it can be dissolved or dispersed. One of these solvents may be used alone, or two or more of them may be used as a mixture. Among these solvents, alcohol or a mixed solvent of alcohol and water is preferable.

The concentration of the silane compound is not particularly limited, but is preferably in the range of 0.01% by weight to 10% by weight. The drying conditions for drying the solution containing the silane compound applied to the surface of the gate insulating film 13 and the surfaces of the transparent conductive films 17 and 17 ′ are not particularly limited, and the solvent added to the silane compound can be removed. All you have to do is. The drying temperature (heating temperature) is preferably in the range of 120C to 140C, depending on the solvent used. The drying time (heating time) may be appropriately set according to the type of solvent used and the drying temperature, and is not particularly limited, but about 10 minutes is one standard.

The amount of the silane compound used, that is, the required amount of the silane compound is determined by the minimum coverage area of the silane compound. In other words, the amount of the silane compound used is expressed by the following formula:

[0073]

(Equation 1)

Is given by At this time, although the thickness of the silane compound depends on the type of the silane compound used, it is 1 nm.
The thickness is preferably set to be within a range of from 50 nm to 50 nm, and in order to maximize the effect of the above treatment, it is most preferable to set the silane compound to form a monomolecular film.

When the above gas treatment method is used,
For example, a display element substrate manufacturing apparatus provided with a silane compound processing apparatus as a substrate surface processing means shown in FIG. 3 is preferably used. The silane compound processing apparatus includes a chamber 21 having an inlet 22 and an outlet 23 for a gas containing a silane compound. In the chamber 21, a hot plate with a substrate suction port for mounting and heating a substrate is provided. A stage (hereinafter simply referred to as a hot stage) 25 is provided.

A film to be processed by using the above-described manufacturing apparatus;
For example, when the surface of the gate insulating film 13 is to be treated with a silane compound, first, the insulating substrate 11 (hereinafter, referred to as a substrate 24) on which the gate insulating film 13 is formed is placed on the hot stage 25. Next, dry air or dry nitrogen is added to 9
A gas 26 containing 9% by volume is introduced into a container 27 containing a silane compound-containing solution 28 and bubbled, and a gas mixture containing air or nitrogen containing a gaseous silane compound is supplied from an inlet 22. It is introduced into the chamber 21.
After the inside of the chamber 21 is replaced with the mixed gas, the substrate 24 is heated by the hot stage 25, so that the substrate 24 is surface-treated with a silane compound.

In FIG. 3, the outlet 23 is provided in the chamber 21. However, if the gas can be replaced, the outlet 23 is provided.
May be omitted. The hot stage 25 is
If the substrate 24 is dry, it may be omitted.

In the case of using the above gas treatment method, a method in which the silane compound-containing solution 28 is directly sprayed on the substrate 24 and dried on the hot stage 25 without using the above-described display element substrate manufacturing apparatus may be used. it can. However, by using the display device substrate manufacturing apparatus, the silane compound can be uniformly attached to the substrate 24, the concentration of the mixed gas in the chamber 21 can be increased, and the substrate 24 can be placed on the hot stage 25. Can reduce the heat loss when heating. Therefore, by using the above-described manufacturing apparatus, the gate insulating film 13 can be made of a silane compound.
The surface and the surfaces of the transparent conductive films 17 and 17 'can be treated more efficiently and easily.

The pressure in the chamber 21 in the case of using the above gas treatment method is not particularly limited, but is preferably set to 0.5 atm or more.

In the above (ii), the surface treatment of the surface of the gate insulating film 13 and the surfaces of the transparent conductive films 17 and 17 ′ has been described. However, the present invention is not limited to this. The surface and the surface of the interlayer insulating film 19 can be similarly treated. In addition, by subjecting the pixel electrode 1 to the surface treatment with the silane compound as described above, the adhesion between the pixel electrode 1 and the alignment film and the physical strength of the pixel electrode 1 are increased, and the reliability is further improved. An active matrix substrate can be obtained.

When the method (ii) is adopted, the silane compound to be used can be properly used depending on the kind of the material constituting the film to be treated with the silane compound. That is, by using the most effective silane compound according to the type of the film, an active matrix substrate having further excellent adhesion and physical strength can be obtained.

For example, when the gate insulating film 13 is made of SiNx and the interlayer insulating film 19 is made of acrylic resin,
When improving the adhesion between the gate insulating film 13 and the interlayer insulating film 19 by treating the surface of the gate insulating film 13 with a silane compound, a silane compound having an alkyl group and an alkoxy group as a terminal group, an epoxy group, It is preferable to use a silane compound having a functional group selected from the group consisting of an amino group and a polyether group and an alkoxy group as a terminal group. And, among the above silane compounds, compounds having an alkyl group and an alkoxy group as terminal groups (specifically, AY43-204 (trade name; n-butyltrimethoxysilane manufactured by Toray Dow Corning), SZ-6078 ( (Trade name; dimethyldiethoxysilane manufactured by Toray Dow Corning Co., Ltd.), and a compound having a polyether group and an ethoxy group (for example, KBM-6)
41 (trade name; polyether trimethylsilane manufactured by Shin-Etsu Chemical Co., Ltd.), and a compound having an amino group and an ethoxy group (for example, KBM-903 (trade name; γ-aminopropyltriethoxysilane manufactured by Shin-Etsu Chemical Co., Ltd.) )
And the like, and from the viewpoint of wettability, a compound having an alkyl group and an alkoxy group as terminal groups and a compound having a polyether group and an ethoxy group are particularly preferable. The wettability can be evaluated, for example, by the contact angle with the film. In this case, a silane compound having a contact angle of 10 ° or less is preferable. still,
By performing a cleaning treatment with ultraviolet light or the like before performing the silane compound treatment, wettability can be improved.

When the transparent conductive films 17 and 17 ′ are made of ITO and the interlayer insulating film 19 is made of an acrylic resin, the surfaces of the transparent conductive films 17 and 17 ′ are treated with a silane compound to form the transparent conductive films 17 and 17 ′. 'And interlayer insulating film 19
In order to improve the adhesiveness with a silane compound having a polyether group and an ethoxy group (for example, KBM-64)
1 (trade name; polyether trimethylsilane manufactured by Shin-Etsu Chemical Co., Ltd.) and the like are preferably used.

When the gate insulating film 13, the transparent conductive films 17 and 17 ', or the interlayer insulating film 19 is treated with a silane compound, for example, as shown in FIG. A chemical covalent bond is generated between the inorganic material forming 17. 17 ′ and the organic material forming the interlayer insulating film 19. First, a silane compound undergoes hydrolysis to become silanol, and forms a siloxane bond with the surface of an inorganic material. On the other hand, the functional group represented by X reacts with the surface of the organic substance to crosslink.

Therefore, by treating the gate insulating film 13, the transparent conductive films 17 and 17 ', or the interlayer insulating film 19 with a silane compound, it is possible to improve the adhesion of, for example, an inorganic material to an organic material. Gate insulating film 1
3. The adhesion between the transparent conductive films 17 and 17 'and the interlayer insulating film 19 can be improved. Moreover, the gate insulating film 13, the transparent conductive films 17 and 17 ', and the interlayer insulating film 1
By treating at least one film selected from No. 9 with a silane compound, the physical strength of each film can be increased, and the physical strength of the obtained active matrix substrate can be improved. A decrease in physical strength under high humidity can be suppressed.

The thus obtained active matrix substrate and the liquid crystal display device using the active matrix substrate have an adhesive strength of 10 kg / cm ^{2 to} 30 k.
g / cm ² , which is much higher than in the past. In addition, the active matrix substrate and the liquid crystal display element are composed of P
Even after storage for 24 hours by CT, the gate insulating film 13 and the transparent conductive film 17.
No film peeling occurs between 7 ′ and the interlayer insulating film 19. Moreover, for example, in the cleaning step after the opening of the contact hole 6, the interlayer insulating film 19 does not swell and peel off.
The performance as an active matrix substrate or a liquid crystal display element is not impaired. Therefore, according to the above configuration, an active matrix substrate with high storage stability and high reliability can be obtained.

In the above description, when the pixel electrode 1 is connected to the drain electrode 16b, the connection electrode 5 is
Although the configuration using the transparent conductive film 17 'is adopted, a configuration in which the pixel electrode 1 and the drain electrode 16b are directly connected via the contact hole 6 may be adopted.

Further, in the above description, the gate electrode 12
Described the active matrix substrate having the so-called inverted staggered TFT 4 provided on the insulating substrate 11 side, but the source electrode 16a and the drain electrode 16b
Is a so-called staggered T provided on the insulating substrate 11 side.
FT may be used.

Further, as the switching element, T
The present invention is not limited to the FT.
Various switching elements such as l-insulator-metal (diode)) can also be used.

In this embodiment mode, an active matrix substrate is used as a display element substrate. However, the display element substrate has a structure in which an organic insulating film and an inorganic insulating film or a transparent conductive film are in contact with each other. If you have
There is no particular limitation. In this embodiment, a liquid crystal display element has been described as an example of a display element using the display element substrate. However, the present invention is not limited to this, and includes a display medium having electro-optical characteristics. The present invention can be applied to all display elements.

In any case, when the transparent conductive film, the inorganic insulating film, and the organic insulating film come into contact with each other, the transparent conductive film, the inorganic insulating film, or the organic insulating film is treated with a silane compound to form the transparent conductive film, the inorganic insulating film, or the organic insulating film. A display element substrate having excellent adhesion between the inorganic insulating film and the organic insulating film can be obtained. Therefore, with the use of the display element substrate, a highly reliable display element can be obtained.

The display element substrate is suitably used for display elements used in OA equipment such as large display devices, car navigation systems, laptop personal computers, and AV equipment.

[0093]

EXAMPLES The present invention will be described in more detail with reference to the following Examples, but it should not be construed that the invention is limited thereto. In the following examples, the adhesion of the organic insulating film to the transparent conductive film and the inorganic insulating film was evaluated.
Hereinafter, ITO was used for the transparent conductive film, SiNx was used for the inorganic insulating film, and a transparent photosensitive acrylic resin developable with an alkaline solution was used for the organic insulating film. Further, a polymer obtained by polymerizing methacrylic acid and glycyl methacrylate was used as a base polymer of the acrylic resin, and a naphthoxydiazide compound as a positive photosensitive agent was used as a photosensitive agent. Further, “%” described in the examples indicates “% by weight”.

Example 1 First, KBM-641 (trade name; polyether trimethylsilane manufactured by Shin-Etsu Chemical Co., Ltd.) as a silane compound was added to an acrylic resin to be an organic insulating film. 25%, (b) 0.5%,
Mixing was performed so that (c) was 1.0%, (d) was 2.0%, and (e) was 4.0%, and the mixture was uniformly stirred with ultrasonic waves for 10 minutes to obtain a mixture.

Thereafter, the mixture was ultrasonically cleaned with a 2% aqueous solution of NaOH for 20 minutes, and then ultrasonically further cleaned with pure water for 10 minutes.

Next, a 5-inch square SiN which has been steam-dried in advance using IPA (isopropyl alcohol) for 240 seconds.
An organic insulating film was formed on the x substrate and the ITO substrate by applying the above mixture using a spin coater. The spin conditions at this time are as shown below. (Spin conditions) 0 rpm → 800 rpm → 0 rpm 1.6 sec. 10 sec. 1.6 sec. Next, the organic insulating film was pre-baked at 90 ° C. for 300 seconds, and then post-baked at 220 ° C. for 60 minutes.

Then, each substrate (hereinafter, referred to as substrate 31) on which the above-mentioned organic insulating film was laminated was 8.5 cm × 2.0 cm.
m. Then, as shown in FIG.
A fixed amount of a thermosetting sealing material (manufactured by Mitsui Toatsu Chemicals, Inc .; trade name: Structbond XN-21S) 32 mixed with a 5 μm spacer was dropped on the substrate 31,
Leveling was performed at 80 ° C. for 30 minutes. Then, this substrate 3
1 is cross-bonded to an ITO substrate 33 of the same size as the substrate 31 and fixed with a clip.
After baking for 0 minutes, a cross cell 34 was obtained.

Thereafter, the cross cell 34 is placed on the fixed base 35, and a ball 36 having a diameter of 10 mm is placed on the substrate 31 at a position 2.5 cm from the center of the sealing material 32 and weighted. A so-called peeling test was performed to measure the adhesive strength (kg / cm ² ) of the cross cell 34. The peeling test was performed using an autograph manufactured by Shimadzu Corporation for each of the above concentrations (a) to (e).
I went cell by cell.

FIG. 6 shows the measurement results when a SiNx substrate was used as the substrate 31. In the above figure, the horizontal axis is
The blending concentration of KBM-641 with respect to the acrylic resin is shown. The vertical axis represents the average relative strength (adhesion strength when the adhesive strength of the cross cell 34 is 1 when the organic insulating film is not subjected to the silane treatment with KBM-641). Intensity ratio).

Further, a pressure cooker test (PCT) was performed using the cross cell 34, and the same peeling test as described above was performed on the cross cell 34 stored for 24 hours. FIG. 6 also shows the results.

From the results shown in FIG. 6, it can be seen that the adhesive strength of the cross cell 34 treated with the above KBM-641 is KB
It was found that the adhesive strength of the cross cell 34 not treated with M-641 was higher than the adhesive strength. Furthermore, KBM-6
In the case of using No. 41, the adhesive strength ratio before PCT becomes the maximum when 0.5% of KBM-641 is mixed.
It was found that when 0.25% of 641 was mixed, the decrease in adhesive strength after PCT was the smallest. Therefore, when the blend concentration is set to 0.25%, the adhesive strength of the cross cell 34 is excellent both before and after PCT.
It can be seen that the optimum addition amount of is 0.25%. The above blending method, without changing the current process equipment,
This is very simple because it is only necessary to mix a silane compound with the organic material constituting the interlayer insulating film 19.

Example 2 First, water: methanol = 1:
The above-mentioned KBM-641 was added to the mixed solvent of No. 2 at a ratio of 1%, and the mixture was uniformly stirred with ultrasonic waves for 10 minutes to obtain a mixed solution. Next, the mixed solution was applied by a spin coater on a 5-inch square ITO substrate and a SiNx substrate which had been subjected to steam drying for 240 seconds using IPA in advance. The spin conditions are as shown below. (Spin conditions) 0 rpm → 1500 rpm → 0 rpm 1 sec. 20 sec. 1 sec.
Bake for 0 minutes.

Next, an acrylic resin was placed on each of the above substrates.
An organic insulating film was formed by applying the same spin conditions as in Example 1 using a spin coater. Next, after pre-baking the organic insulating film at 90 ° C. for 300 seconds,
Post-baked at 0 ° C. for 60 minutes.

Thereafter, the cross cells 34 are formed in the same manner as in Example 1 by using the above-mentioned substrates on which the organic insulating film is laminated.
And the same peeling test as in Example 1 was performed. Thus, the average relative strength (adhesion strength ratio) when the adhesion strength of the cross cell 34 was 1 when an ITO substrate or a SiNx substrate not subjected to the silane treatment with KBM-641 was used.

Further, a pressure cooker test (PCT) was performed using the above-described cross cell 34, and the same peeling test as described above was performed on the cross cell 34 stored for 24 hours. The results are shown in Table 1.

[0106]

[Table 1]

From the results shown in Table 1, regardless of whether the substrate treated with KBM-641 was an ITO substrate or a SiNx substrate, the adhesive strength before PCT was compared with that without the silane compound treatment. It was found to improve. The substrate processed by KBM-641 is Si
In the case of the Nx substrate, no improvement in the adhesive strength after PCT was observed, but the substrate treated with the silane compound was ITO.
In the case of the substrate, it was found that the adhesive strength after PCT was improved as compared with the case where the silane compound treatment was not performed.

Example 3 In the above Examples 1 and 2, instead of KBM-641, K
BM-303 (trade name; β- manufactured by Shin-Etsu Chemical Co., Ltd.)
(3,4-epoxycyclohexyl) ethyltrimethoxysilane), KBE-402 (trade name; γ-glycidoxypropylmethyldiethoxysilane manufactured by Shin-Etsu Chemical Co., Ltd.), KBM-603 (trade name; Shin-Etsu Chemical Co., Ltd.) N-β-Aminoethyl-γ-aminopropyltrimethoxysilane), KBM-903 (trade name; γ-aminopropyltriethoxysilane, Shin-Etsu Chemical Co., Ltd.), AY43-204 (trade name; Toray Dow Corning) N-butyltrimethoxysilane) or SZ-6
Except that 078 (trade name; dimethyldiethoxysilane manufactured by Dow Corning Toray Co., Ltd.) was used, the adhesive strength ratio of the cross cell 34 was determined using the same method as in Examples 1 and 2.

As a result, in the blending process with the acrylic resin to be the organic insulating film, KBM-603 and KBM-
903 indicates that the resin material is gelled and KBM-303 and KBM
Regarding BE-402, no improvement in adhesive strength was observed irrespective of the type of substrate, and in the primer treatment in the combination of the ITO substrate and the ITO substrate, the adhesive strength hardly improved when any of the compounds was used. However, the improvement of the adhesive strength was recognized in any combination of the ITO substrate and the SiNx substrate. From these results, the above-mentioned KBM-603, KBM-903, KBM-3
03 and KBE-402 are found to be effective when a primer treatment is performed on the surface of the SiNx substrate.

In the case of SZ-6078, no improvement in adhesive strength was observed with the combination of the ITO substrate and the ITO substrate. However, in the case of the combination of the ITO substrate and the SiNx substrate, the adhesive strength of both the blending and the primer treatment was reduced. Improvement was observed. In particular, when the above-mentioned SZ-6078 was used, in the primer treatment, an adhesive strength ratio of 3.7, which was much higher than the conventional adhesive strength, was obtained. further,
When AY43-204 was used, no improvement in adhesion strength was observed in the blending treatment and the primer treatment in the combination of the ITO substrate and the ITO substrate, but the primer treatment in the combination of the ITO substrate and the SiNx substrate was not performed. As a result, an adhesive strength ratio of 3.0, which is much higher than the conventional adhesive strength, was obtained.

[0111]

As described above, the display element substrate according to the first aspect of the present invention has at least one of an inorganic insulating film and a transparent conductive film and an organic insulating film. At least one of the film and the transparent conductive film and the organic insulating film are adhered to each other with a silane compound.

As described above, the display element substrate according to the second aspect of the present invention is the display element substrate according to the first aspect, wherein at least one of the inorganic insulating film and the transparent conductive film is provided with the organic film. In this configuration, the insulating film and the insulating film are chemically bonded by a silane compound.

As described above, the display element substrate according to the third aspect of the present invention is the display element substrate according to the first or second aspect, selected from the inorganic insulating film, the transparent conductive film, and the organic insulating film. At least one type of film is surface-treated with a silane compound.

As described above, the display element substrate according to the fourth aspect of the present invention is the display element substrate according to any one of the first to third aspects, wherein the organic insulating film contains a silane compound. Configuration.

According to a fifth aspect of the present invention, there is provided the display element substrate according to any one of the first to fourth aspects, wherein the silane compound is a silane coupling agent. , Silazane, chlorosilane, and alkoxysilane.

The method for manufacturing a display element substrate according to claim 6 of the present invention comprises the steps of:
And at least one film selected from organic insulating films is treated with a silane compound.

The apparatus for manufacturing a display element substrate according to claim 7 of the present invention is provided with a substrate surface treatment means having a chamber provided with an inlet through which a gas containing a silane compound flows, as described above. Configuration.

According to the arrangement, at least one film selected from the inorganic insulating film, the transparent conductive film, and the organic insulating film is treated with the silane compound, so that the organic insulating film and the organic insulating film Adhesion (adhesion strength) between the inorganic insulating film and / or the transparent conductive film that comes in contact with the substrate is improved.

As a result, a highly reliable display element substrate having excellent adhesion between the organic insulating film and the transparent conductive film or the inorganic insulating film in contact with the organic insulating film can be provided. The display element substrate is remarkably excellent in adhesion between the transparent conductive film or the inorganic insulating film and the organic insulating film. For example, the display element substrate, or a display element using the display element substrate is heated at a temperature. Even when stored for 24 hours under the conditions of 121 ° C., a pressure of 2 atm, and a humidity of 99%, the transparent conductive film, the inorganic insulating film, and the organic insulating film in the pixel portion or the seal portion when a display element is formed. No film peeling occurs.
Also, when the display element substrate is immersed in an organic solvent, the organic insulating film does not swell and peel off.

It is more preferable that the organic insulating film contains a silane compound, since the number of treatments can be reduced as compared with the case where the film is surface-treated by applying the silane compound, for example.

Further, when the above-described manufacturing apparatus is used, for example, an inorganic insulating film or a transparent conductive film constituting a display element substrate,
The silane compound can be efficiently attached to the surface of the organic insulating film. By attaching the silane compound to the surface of the inorganic insulating film or the transparent conductive film in this manner, adhesion between the transparent conductive film or the inorganic insulating film and the organic insulating film laminated on the transparent conductive film or the inorganic insulating film is obtained. In addition, it is possible to provide a display element substrate with high reliability and high reliability.

[Brief description of the drawings]

FIG. 1 is a plan view showing a schematic configuration of one pixel portion of an active matrix substrate as a display element substrate according to an embodiment of the present invention. Note that the pixel electrode is indicated by a two-dot chain line.

FIG. 2 is a diagram showing A- in the active matrix substrate of FIG. 1;
FIG. 3 is a sectional view taken along line A of FIG.

FIG. 3 is a cross-sectional view schematically illustrating a silane compound processing apparatus in the display element substrate manufacturing apparatus of the present invention.

FIG. 4 is a diagram illustrating a mechanism of a chemical reaction by the silane compound treatment of the present invention.

FIG. 5 is a diagram illustrating a cross cell for a peeling test and a measuring method thereof.

FIG. 6 is a graph showing the relationship between the adhesive strength ratio of the cross cell and the concentration of the silane compound when the cross cell is formed using a photosensitive polymer blended with a silane compound as an organic insulating film material.

[Explanation of symbols]

 Reference Signs List 1 pixel electrode (second transparent conductive film) 2 gate signal line 3 source signal line 4 TFT 5 connection electrode (first transparent conductive film) 6 contact hole 11 insulating substrate 12 gate electrode 13 gate insulating film (inorganic insulating film) 14 Semiconductor layer 16a Source electrode 16b Drain electrode 17 Transparent conductive film (first transparent conductive film) 17 ′ Transparent conductive film (first transparent conductive film) 18 Metal layer 18 ′ Metal layer 19 Interlayer insulating film (organic insulating film) 21 Chamber 22 Inflow port 23 Outflow port 24 Substrate 25 Hot stage 26 Gas 27 Container 28 Silane compound-containing solution

Claims (7)

[Claims] An organic insulating film comprising at least one of an inorganic insulating film and a transparent conductive film and an organic insulating film, wherein at least one of the inorganic insulating film and the transparent conductive film and the organic insulating film are a silane compound. A display element substrate, which is closely adhered to the substrate. 2. The method according to claim 1, wherein at least one of the inorganic insulating film and the transparent conductive film and the organic insulating film are chemically bonded by a silane compound.
The display element substrate according to the above. 3. The display element substrate according to claim 1, wherein at least one film selected from the group consisting of an inorganic insulating film, a transparent conductive film, and an organic insulating film is surface-treated with a silane compound. . 4. The display element substrate according to claim 1, wherein said organic insulating film contains a silane compound. 5. The method according to claim 1, wherein the silane compound is at least one compound selected from the group consisting of a silane coupling agent, silazane, chlorosilane, and alkoxysilane. Display element substrate. 6. A method for manufacturing a display element substrate, comprising treating at least one film selected from an inorganic insulating film, a transparent conductive film, and an organic insulating film with a silane compound. 7. An apparatus for manufacturing a substrate for a display element, comprising a substrate surface treatment means having a chamber provided with an inlet through which a gas containing a silane compound flows.