WO2008026392A1 - Appareil d'inspection d'un circuit intégré à semi-conducteur - Google Patents

Appareil d'inspection d'un circuit intégré à semi-conducteur Download PDF

Info

Publication number
WO2008026392A1
WO2008026392A1 PCT/JP2007/063981 JP2007063981W WO2008026392A1 WO 2008026392 A1 WO2008026392 A1 WO 2008026392A1 JP 2007063981 W JP2007063981 W JP 2007063981W WO 2008026392 A1 WO2008026392 A1 WO 2008026392A1
Authority
WO
WIPO (PCT)
Prior art keywords
temperature
semiconductor integrated
integrated circuit
temperature control
control signal
Prior art date
Application number
PCT/JP2007/063981
Other languages
English (en)
Japanese (ja)
Inventor
Yuji Ide
Yasuteru Maeda
Masahiro Ikeda
Original Assignee
Panasonic Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corporation filed Critical Panasonic Corporation
Publication of WO2008026392A1 publication Critical patent/WO2008026392A1/fr

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2855—Environmental, reliability or burn-in testing
    • G01R31/2856—Internal circuit aspects, e.g. built-in test features; Test chips; Measuring material aspects, e.g. electro migration [EM]

Definitions

  • the present invention relates to an inspection apparatus for inspecting and evaluating electrical characteristics of a semiconductor integrated circuit.
  • Inspection and evaluation of semiconductor devices are performed in various aspects such as V, B, and B. For example, after a package is completed, it is performed using a handler or a thermostriamer, and in a wafer state, a prober is used. Implemented.
  • the ambient temperature of the semiconductor device is usually kept at a desired value.
  • the ambient temperature of the semiconductor integrated circuit is constant, but the internal temperature inside the package is different from the ambient temperature of the semiconductor integrated circuit, which causes a problem that the electrical characteristics cannot be measured accurately.
  • multiple inspection items are used in the inspection of semiconductor integrated circuits. The power consumption varies depending on the inspection item, and the internal temperature also varies depending on the inspection. If the ambient temperature of the semiconductor integrated circuit is set according to the inspection item with the lowest power consumption, the internal temperature will be higher than the originally expected temperature during other inspections.
  • the electrical characteristics cannot be measured accurately, and yield loss or semiconductor integrated circuit breakdown can occur. Conversely, power consumption If the ambient temperature of the semiconductor integrated circuit is set according to the test item with the highest strength, the internal temperature will be lower than the expected temperature during other tests. As a result, the electrical characteristics cannot be accurately measured, and the internal temperature of the semiconductor integrated circuit may not reach the predetermined temperature during the inspection and evaluation, so that the electrical characteristics of the semiconductor integrated circuit cannot be sufficiently guaranteed. Challenges also come out.
  • One method of overcoming such a problem is a method of dynamically changing the setting of the ambient temperature of the semiconductor device in accordance with the internal state of the semiconductor integrated circuit.
  • Patent Document 1 JP 2006-125865 A
  • the present invention has been made in view of the strong point, and an object of the present invention is to accurately detect the internal temperature of the semiconductor integrated circuit without incorporating the temperature detection circuit in the semiconductor integrated circuit. As a result, an inspection device that can accurately inspect and evaluate electrical characteristics Is to provide.
  • the semiconductor integrated circuit inspection device of the present invention includes an inspection unit, a temperature setting unit, a current monitor unit, and a temperature control unit.
  • the inspection unit inspects and evaluates the electrical characteristics of the semiconductor integrated circuit.
  • the current monitor unit monitors the current value flowing through the semiconductor integrated circuit and outputs the current value.
  • the temperature control unit calculates a temperature control signal for controlling the setting of the ambient temperature of the semiconductor integrated circuit using the current value and a predetermined algorithm, and outputs the temperature control signal.
  • the temperature setting unit sets the ambient temperature of the semiconductor integrated circuit according to the temperature control signal.
  • the power supply current of the semiconductor integrated circuit is monitored, and when the amount of current increases, the set temperature is lowered because the self-heating of the semiconductor integrated circuit increases, and conversely, the amount of current increases. If it decreases, the self-heating of the semiconductor integrated circuit has decreased, so it is possible to raise the set temperature. Therefore, the temperature around the semiconductor integrated circuit can be adjusted to a temperature corresponding to the amount of current during the inspection and evaluation of the semiconductor integrated circuit.
  • the temperature can be controlled in accordance with the self-heating of the semiconductor integrated circuit without adding a temperature detection circuit or the like to the semiconductor integrated circuit to be inspected, so that the electrical characteristics can be accurately inspected and evaluated. Is possible.
  • FIG. 1 is a block diagram showing a configuration of a semiconductor integrated circuit inspection apparatus according to a first embodiment of the present invention.
  • FIG. 2 is a graph illustrating a method for controlling the ambient temperature of a semiconductor integrated circuit in the first and third to sixth embodiments of the present invention.
  • FIG. 3 is a graph illustrating a method for controlling the ambient temperature of a semiconductor integrated circuit in the second embodiment of the present invention.
  • FIG. 4 is a block diagram showing a configuration of a semiconductor integrated circuit inspection apparatus according to a third embodiment of the present invention.
  • FIG. 5 shows a configuration of a semiconductor integrated circuit inspection apparatus according to a fourth embodiment of the present invention.
  • FIG. 6 is a block diagram showing a configuration of a semiconductor integrated circuit inspection apparatus according to a fifth embodiment of the present invention.
  • FIG. 7 is a block diagram showing a configuration of a semiconductor integrated circuit inspection apparatus according to a sixth embodiment of the present invention.
  • FIG. 8 is a block diagram showing a configuration of a semiconductor integrated circuit inspection apparatus according to a seventh embodiment of the present invention.
  • FIG. 9 is a graph illustrating a method for controlling the ambient temperature of a semiconductor integrated circuit in the seventh embodiment of the present invention.
  • FIG. 10 is a graph illustrating a method for controlling the ambient temperature of a semiconductor integrated circuit in an eighth embodiment of the present invention.
  • FIG. 11 is a graph illustrating a method for controlling the ambient temperature of a semiconductor integrated circuit in the ninth embodiment of the present invention.
  • FIG. 12 is a graph illustrating a method for controlling the ambient temperature of the semiconductor integrated circuit in the tenth embodiment of the present invention.
  • FIG. 1 is a diagram showing a configuration of an inspection apparatus 10 that works on the present embodiment.
  • the inspection apparatus 10 includes an LSI tester (inspection unit) 11, a handler 12, a temperature control unit 13, a temperature setting unit 14, and a current monitoring unit 15.
  • the LSI tester 11 is electrically connected to the packaged semiconductor integrated circuit 1 via a socket (not shown), and inspects and evaluates the electrical characteristics of the semiconductor integrated circuit 1.
  • the LS I tester 11 is also connected to the handler 12 via a cable (not shown) or the like, and exchanges the pass / fail judgment result of the semiconductor integrated circuit 1 or the sorting information with the node 12.
  • the handler 12 is a device that automates the transport and classification of the semiconductor integrated circuit 1, and includes a temperature control unit 13, a temperature setting unit 14, and a current monitoring unit 15.
  • the temperature control unit 13 uses a predetermined algorithm and one or more current values input at a predetermined timing from the current monitoring unit 15 to control the temperature at which the ambient temperature of the semiconductor integrated circuit 1 is set.
  • the control signal is calculated, and the temperature control signal is output to the temperature setting unit 14 at a predetermined timing.
  • the temperature control signal is calculated by predicting self-heating in the semiconductor integrated circuit 1 based on the inspection algorithm in the inspection of the electrical characteristics of the semiconductor integrated circuit 1.
  • the temperature control signal may increase or decrease the ambient temperature of the semiconductor integrated circuit 1! /
  • the current value may be a binary value (or a tri-level value that does not change the ambient temperature).
  • a temperature calculated using a predetermined algorithm is a predetermined algorithm.
  • the temperature setting unit 14 sets the ambient temperature of the semiconductor integrated circuit 1 in accordance with a temperature control signal input from the temperature control unit 13 at a predetermined timing.
  • the method of setting the ambient temperature of the semiconductor integrated circuit 1 is not particularly limited, but the temperature control signal has two values (or three values including that without changing the ambient temperature) whether the ambient temperature is raised or lowered. If the temperature control signal that is preferred to increase or decrease the ambient temperature with a pre-determined temperature gradient is the calculated temperature, discretely set the temperature. It is preferable to do this.
  • the temperature gradient may be constant or may be different based on the temperature control signal input from the temperature control unit 13! /.
  • the current monitoring unit 15 is connected to one or more terminals (not shown) of the semiconductor integrated circuit 1, monitors the current value flowing through each terminal at a predetermined timing, and controls the current value to control the temperature. Output to part 13.
  • FIG. 2 is a diagram for explaining an example of the temperature control method in the present embodiment.
  • tO to t9 are timings at which the current value monitored by the current monitoring unit 15 is output to the temperature control unit 13, and timings at which the temperature control unit 13 outputs a temperature control signal to the temperature setting unit 14. .
  • the timing at which the current monitor unit 15 outputs the current value and the timing at which the temperature control unit 13 outputs the control signal are the same, but they may be different. good.
  • FIG. 2 shows graphs (a) to (c).
  • Graph (a) schematically shows the time change of the current value monitored by the current monitor unit 15, and graph (b) schematically shows the time change of the temperature control signal output by the temperature control unit 13.
  • the graph) schematically shows the time change of the temperature set by the temperature setting unit 14.
  • the current monitoring unit 15 monitors the current value at each timing from tO to t9, and the temperature control unit 1 Output to 3.
  • the temperature control unit 13 calculates a difference between the current values by subtracting the current value input immediately before from the newly input current value. If the difference between the current values is positive, the amount of current flowing to the terminal of the semiconductor integrated circuit 1 is increased!], And it is considered that the amount of self-heating of the semiconductor integrated circuit 1 is increased.
  • a temperature control signal (a negative signal in the graph (b)) that means to lower the ambient temperature of the circuit is output to the temperature setting unit 14.
  • a temperature control signal (positive signal in graph (b)), which means increasing the ambient temperature, is output to the temperature setting unit 14.
  • the current value at the timing t2 is smaller than the current value at the timing tl as shown in the graph (a). Therefore, it is considered that the self-heating amount of the semiconductor integrated circuit 1 is reduced as compared with the case of the timing tl. Therefore, the temperature control signal at timing t2 The signal becomes a positive signal as shown in graph (b). Conversely, the current value at timing t3 is larger than the current value at timing t2, as shown in graph (a). Therefore, it is considered that the amount of self-heating of the semiconductor integrated circuit 1 is higher than that at the timing t2. Therefore, the temperature control signal at timing t3 is a negative signal as shown in graph (b).
  • the temperature setting unit 14 increases the set temperature around the semiconductor integrated circuit 1 when the temperature control signal input from the temperature control unit 13 is positive. If the control signal is negative, the set temperature is lowered.
  • the ambient temperature of the semiconductor integrated circuit 1 is lowered when the value of the current flowing through the semiconductor integrated circuit 1 is increased, and the current value force is decreased. Can be raised. Thereby, the ambient temperature can be adjusted according to the self-heating of the semiconductor integrated circuit 1. Accordingly, changes in the ambient temperature of the semiconductor integrated circuit 1 can be suppressed during inspection or evaluation of the semiconductor integrated circuit 1. Therefore, if the inspection apparatus 10 according to the present embodiment is used, the semiconductor integrated circuit 1 can be accurately inspected or evaluated.
  • the present embodiment may have the following configuration! /.
  • Graph (a) shown in FIG. 2 shows the case where the value of the current flowing through one terminal of the semiconductor integrated circuit is monitored, but the number of terminals is not particularly limited.
  • the control signal may be calculated using the sum of the current values flowing through the terminals.
  • FIG. 1 shows the configuration of the inspection apparatus 20 that is useful for the present embodiment. In the following, description will be made focusing on differences from the first embodiment.
  • the LSI tester 21 passes arbitrary timing information determined by the inspection algorithm power to the noder 22 in addition to the function of the LSI tester 11 shown in the first embodiment. At this time, the timing for determining the inspection algorithm force is the measurement point for each inspection or the condition setting for each inspection is completed. An end point can be used, and any timing can be used as long as the test algorithm power set in the LSI tester 21 is also required.
  • the handler 22 transfers arbitrary timing information received from the LSI tester 21 to the temperature control unit 13 in addition to the function of the noder 12 shown in the first embodiment.
  • the temperature control unit 13 monitors the current of the current monitor unit 15 at the timing received from the handler 22, and controls the temperature setting unit 14 using one or more monitored current values and a predetermined algorithm.
  • the temperature control signal is obtained and the temperature control signal is output to the temperature setting unit 14 at a predetermined timing.
  • the temperature control signal to be output is a current that can be a binary value (or three values that do not change the ambient temperature), whether the ambient temperature is raised or lowered. It may be a value and a temperature value calculated using a predetermined algorithm.
  • FIG. 3 is a diagram for explaining an example of the temperature control method in the present embodiment.
  • the TO force T 6 is the timing when the LSI tester 21 measures the semiconductor integrated circuit 1.
  • tO to t6 are the times that are a certain time (A t) before TO to T6, respectively, and the timing for outputting the current value monitored by the current monitoring unit 15 to the temperature control unit 13 and the temperature control. This is the timing when the unit 13 outputs the temperature control signal to the temperature setting unit 14.
  • the force at which the current monitoring unit 15 outputs the current value and the timing at which the temperature control unit 13 outputs the control signal may be different from each other.
  • FIG. 3 shows graphs (a) to (c), and graph (a) schematically shows the time change of the current value monitored by the current monitor unit 15, The graph (b) schematically shows the time change of the temperature control signal output from the temperature control unit 13, and the graph (b) schematically shows the time change of the temperature set by the temperature setting unit 14.
  • the current monitor unit 15 monitors the current value at each timing from tO to t6 to monitor the temperature. Output to the control unit 13.
  • the temperature control unit 13 calculates the difference between the current value input immediately before the newly input current value. As shown in graph (b), if the difference in current value is positive, For example, a temperature control signal (a negative signal in graph (b)) that means lowering the ambient temperature of semiconductor integrated circuit 1 is output to temperature setting unit 14, and if the difference in current value is negative, the temperature is A control signal (positive signal in graph (b)) that means increasing is output to the temperature setting unit 14.
  • the temperature setting unit 14 increases the ambient temperature setting of the semiconductor integrated circuit 1 when the temperature control signal input from the temperature control unit 13 is positive. If the control signal is negative, the set temperature is lowered.
  • the timing for controlling the ambient temperature of the semiconductor integrated circuit 1 is adjusted using the inspection information, so that the temperature control during measurement is performed with higher accuracy. it can.
  • FIG. 4 is a diagram showing the configuration of the inspection apparatus 30 that works well with the present embodiment.
  • the same components as those in FIG. 1 are denoted by the same reference numerals and description thereof is omitted.
  • the inspection apparatus 30 includes an LSI tester 11, a handler 32, a temperature control unit 33, a temperature setting unit 14, a current monitoring unit 15, and a voltage monitoring unit 36. .
  • the handler 32 is a device that automates the conveyance and classification of the semiconductor integrated circuit 1, and includes a temperature control unit 33, a temperature setting unit 14, a current monitoring unit 15, and a voltage monitoring unit 36. ing. That is, unlike the handler 12 in the first embodiment, the handler 32 in the present embodiment further includes a voltage monitor unit 36.
  • the temperature control unit 33 includes one or more current values input from the current monitoring unit 15 at a predetermined timing, one or more voltage values input from the voltage monitoring unit 36 at a predetermined timing, and Then, a temperature control signal for controlling the ambient temperature of the semiconductor integrated circuit 1 is obtained using a predetermined algorithm, and the temperature control signal is output to the temperature setting unit 14 at a predetermined timing.
  • the temperature control signal may be a binary value (or three values including that without changing the ambient temperature), as described in Embodiment 1 above, whether the ambient temperature is raised or lowered! Well, even current values, voltage values and temperature values calculated using a given algorithm.
  • the voltage monitor unit 36 is connected to one or more terminals of the semiconductor integrated circuit 1, monitors the voltage value applied to each terminal at a predetermined timing, and sends the voltage value to the temperature control unit 33. Output.
  • tO to t9 shown in FIG. 2 are timings when the temperature control unit 33 outputs the temperature control signal to the temperature setting unit 14.
  • the graph (a) shown in FIG. 2 shows the voltage value applied to an arbitrary terminal of the semiconductor integrated circuit 1 and the current flowing through the terminal, not the time change of the current flowing through an arbitrary terminal of the semiconductor integrated circuit 1.
  • a time change of a physical quantity value for example, power consumption value
  • graph (a) shows the change in power consumption over time.
  • the temperature control unit 33 subtracts the power consumption value calculated immediately before from the newly calculated power consumption value. Calculate the difference in power consumption values. As shown in the graph (b), if the difference in power consumption value is positive, it is considered that the amount of self-heating of the semiconductor integrated circuit 1 has increased. The control signal (negative signal shown in graph (b)) is output to the temperature setting unit 14. Conversely, if the difference in power consumption value is negative, it is considered that the amount of self-heating of the semiconductor integrated circuit 1 is reduced, so the temperature control signal (graph (b)) that means increasing the temperature. Output to the temperature setting unit 14.
  • the power consumption value at the timing t2 is smaller than the power consumption value at the timing tl. Therefore, it is considered that the self-heating value of the semiconductor integrated circuit 1 is reduced.
  • the temperature control signal at timing t2 is a positive signal.
  • the power consumption value at timing t3 is greater than the power consumption value at timing t2, the amount of self-heating of semiconductor integrated circuit 1 is considered to increase, and temperature control at timing t3 The signal is a negative signal.
  • the temperature setting unit 14 increases the set temperature around the semiconductor integrated circuit 1 when the temperature control signal input from the temperature control unit 33 is positive, If the temperature control signal is negative, the set temperature is lowered.
  • the set value of the ambient temperature of the semiconductor integrated circuit 1 is changed. Can do. Specifically, when the physical quantity is proportional to the current value and voltage value, such as power consumption, it is considered that the self-heating amount of the semiconductor integrated circuit 1 increases when the physical quantity increases. When the set value of the ambient temperature is reduced and the physical quantity is reduced, it is considered that the amount of self-heating of the semiconductor integrated circuit 1 has decreased, so the set value of the ambient temperature is increased.
  • the self-heating value of the semiconductor integrated circuit 1 increases when the physical quantity increases. Therefore, when the set value of the ambient temperature is increased and the physical quantity decreases, it is considered that the self-heating value of the semiconductor integrated circuit 1 has increased. Make it smaller. Thus, the ambient temperature can be adjusted more accurately according to the self-heating of the semiconductor integrated circuit 1.
  • this embodiment may have the following configuration as in the first embodiment.
  • Graph (a) shown in Fig. 2 shows the case where the value of the current flowing through one terminal of semiconductor integrated circuit 1 is monitored, but the number of terminals is not particularly limited.
  • the control signal may be calculated using the sum of the current values flowing through the terminals.
  • FIG. 5 is a diagram showing a configuration of the inspection apparatus 40 that is effective in the present embodiment.
  • the same components as those of FIG. 5 are identical to those of FIG. 5.
  • the inspection apparatus 40 Similar to the inspection apparatus 30 according to the third embodiment, the inspection apparatus 40 according to the present embodiment includes an LSI tester 11, a handler 42, a temperature control unit 43, a temperature setting unit 14, a current monitoring unit 15, and a voltage.
  • a monitor unit 36 is provided.
  • the handler 42 is a device that automates the transport and classification of the semiconductor integrated circuit 1, and includes the temperature control unit 43, the temperature setting unit 14, the current monitoring unit 15, and the voltage monitoring unit 36 as in the third embodiment. Have.
  • the temperature control unit 43 receives one or more current values that are the same as those of the temperature control unit 33 described in the third embodiment from the current monitor unit 15 at a predetermined timing, and the one or more voltage values are input. Although input from the voltage monitor unit 36 at a predetermined timing, unlike the temperature control unit 33 described in the third embodiment, one or more arbitrary parameters 47 are also input as an external force. That is, the temperature control unit 43 calculates a temperature control signal for controlling the temperature setting unit 14 using the current value, the voltage value, the arbitrary parameter 47, and a predetermined algorithm, and sets the temperature at a predetermined timing. Output to part 14.
  • the temperature control signal to be output may be two values (or three values including no change in the ambient temperature) depending on whether the ambient temperature is raised or lowered, as described in Embodiment 1 above. It may be a temperature value calculated by the above method.
  • the external force input parameter 47 is not particularly limited.
  • the thermal resistance value of the knock of the semiconductor integrated circuit 1 to be inspected is used as the parameter 47, the current value and the voltage value are used. This is preferable because the ambient temperature can be controlled more accurately than when the ambient temperature of the semiconductor integrated circuit 1 is controlled.
  • tO to t9 shown in FIG. 2 are timings when the temperature control unit 43 outputs the temperature control signal to the temperature setting unit 14.
  • an arbitrary parameter 47 input from the outside is used in addition to the voltage value applied to an arbitrary terminal of the semiconductor integrated circuit 1 and the current value flowing through the terminal. The change over time of the physical quantity value (for example, self-heating value) is shown.
  • the thermal resistance value of the semiconductor integrated circuit 1 is calculated using the current value, the voltage value, the thermal resistance value, and a predetermined algorithm will be described.
  • the temperature control unit 43 subtracts the previous internal heat generation amount from the newly obtained internal heat generation amount. Calculate the difference in internal heat generation. If the difference in the amount of heat generated is positive, a temperature control signal (a negative signal shown in graph (b)) that means lowering the temperature is sent to temperature setting unit 14 as shown in graph (b). Output. Conversely, if the difference in internal heat generation is negative, a temperature control signal (positive signal shown in graph (b)) that means increasing the temperature as shown in graph (b) is sent to temperature setting unit 14 Output to.
  • the temperature control signal at timing t2 is a positive signal.
  • the internal heat generation at timing t3 is larger than the internal heat generation at timing t2, it is preferable to lower the ambient temperature of semiconductor integrated circuit 1.As a result, the temperature control signal at timing t3 is negative. Signal.
  • the temperature setting unit 14 increases the set value of the ambient temperature of the semiconductor integrated circuit 1 when the temperature control signal input from the temperature control unit 43 is positive, When the temperature control signal is negative, the set value of the ambient temperature of the semiconductor integrated circuit 1 is decreased.
  • the ambient temperature of the integrated circuit 1 can be changed. Specifically, when the physical quantity is proportional to the current value, voltage value, and optional parameter 47, such as the self-heating value, as described above, the ambient temperature of the semiconductor integrated circuit 1 is set as the physical quantity increases. Increase the value and decrease the set value if the physical quantity decreases. Conversely, when the physical quantity to be monitored is inversely proportional to the current value, the set value is decreased as the physical quantity increases, and the set value is increased as the physical quantity decreases. As a result, the ambient temperature can be adjusted more accurately according to the self-heating of the semiconductor integrated circuit 1.
  • Graph (a) shown in Fig. 2 shows the case where the value of the current flowing through one terminal of semiconductor integrated circuit 1 is monitored, but the number of terminals is not particularly limited.
  • the control signal may be calculated using the sum of the current values flowing through the terminals.
  • the force that an arbitrary parameter can be input from the outside to the inspection device according to the third embodiment is applied to the inspection device according to the first or second embodiment. Even if external force can be input. Even in this case, substantially the same effect as that of the present embodiment can be obtained.
  • FIG. 6 is a diagram showing a configuration of the inspection apparatus 50 of the present embodiment.
  • the same components as those in FIG. 5 are denoted by the same reference numerals and description thereof is omitted.
  • the inspection apparatus 50 includes an LSI tester 51, a handler 52, a temperature control unit 53, a temperature setting unit 14, and a current monitoring unit. 55 and a voltage monitor unit 56.
  • the current monitor unit 55 and the voltage monitor unit 56 are built in the LSI tester 51 instead of the handler 52.
  • the LSI tester 51 is electrically connected to the packaged semiconductor integrated circuit 1 through a socket.
  • the current monitor unit 55 and the voltage monitor are only required to inspect and evaluate the electrical characteristics of the semiconductor integrated circuit 1.
  • Part 56 is built-in.
  • the LSI tester 51 is connected to the handler 52 through a cable or the like.
  • the LSI tester 51 and the voltage can be obtained simply by inputting / outputting data such as a pass / fail judgment result of the semiconductor integrated circuit 1 or sorting information.
  • the monitoring result in the monitor unit 56 is output to the nodler 52 at a predetermined timing.
  • the handler 52 is a device that automates the transport and classification of the semiconductor integrated circuit 1 and includes a temperature control unit 53 and a temperature setting unit 14.
  • the handler 52 is connected to the LSI tester 51 through a cable or the like as described above, and in addition to the input / output of data such as the pass / fail judgment result of the semiconductor integrated circuit 1 or sorting information, the current monitor unit 55 and the voltage monitor unit
  • the monitoring result in 56 is received at a predetermined timing, and the pass / fail judgment result, sorting information or the monitoring result is output to the temperature control unit 53 at a predetermined timing.
  • the temperature control unit 53 uses the current value and voltage value input from the handler 52 at a predetermined timing, an arbitrary force 47 input from the external force of the handler 52, and a predetermined algorithm, and the semiconductor integrated circuit 1
  • the temperature control signal for controlling the ambient temperature is calculated, and the temperature control signal is output to the temperature setting unit 14 at a predetermined timing.
  • the temperature control signal to be output is calculated according to the above calculation method, whether the ambient temperature is raised or lowered, and whether the ambient temperature is 2 values (or 3 values including / without changing the ambient temperature). It may be a temperature value.
  • the current monitor unit 55 is connected to one or more terminals of the semiconductor integrated circuit 1, monitors the current value flowing through each terminal at a predetermined timing, and outputs data to the handler 52 from the LSI tester 51.
  • the current value is output to the temperature control unit 53 as part of.
  • the current monitoring unit 55 can also measure a current when inspecting and evaluating the semiconductor integrated circuit 1, and output the current value measured in the inspection and evaluation to the temperature control unit 53. I'll do it.
  • the voltage monitor unit 56 is connected to one or more terminals of the semiconductor integrated circuit 1, monitors the voltage value flowing to each terminal at a predetermined timing, and outputs data output from the LSI tester 51 to the handler 52.
  • the current value is output to the temperature control unit 53 as part of.
  • the voltage monitor unit 56 can also measure the voltage when the semiconductor integrated circuit 1 is inspected and evaluated, and outputs the voltage value measured in the inspection and evaluation to the temperature control unit 53. I'll do it.
  • this embodiment may have the following configuration! /.
  • the LSI tester normally has a function of measuring current and voltage !, it uses the function of measuring current as the current monitor unit, and the function of measuring voltage as the voltage monitor unit. Can be used. In this way, current and current are utilized by utilizing the functions that LSI testers have in the past. If the voltage is measured, the cost of the inspection apparatus can be reduced.
  • the force that the current monitor unit and the voltage monitor unit are built in the LSI tester in the inspection apparatus according to the above fourth embodiment.
  • the current monitor and voltage monitor may be built in the LSI tester.
  • FIG. 7 is a diagram showing a configuration of the inspection apparatus 60 that works on the present embodiment.
  • the same components as those in FIG. 7 are identical to FIG. 7 in FIG. 7, the same components as those in FIG. 7 in FIG. 7, the same components as those in FIG. 7
  • the inspection apparatus 60 includes an LSI tester 11, a handler 62, a temperature control unit 63, a temperature setting unit 64, a current monitor unit 15, a voltage monitor unit 36, and a storage unit 68. It is equipped with.
  • the handler 62 is a device that automates the transport and classification of the semiconductor integrated circuit 1, and includes a temperature control unit 63, a temperature setting unit 64, a current monitoring unit 15, a voltage monitoring unit 36, and a storage unit 68. Have.
  • the temperature control unit 63 includes one or more current values input from the current monitor unit 15 at a predetermined timing, one or more voltage values input from the voltage monitor unit 36 at a predetermined timing, and a handler. 62 external force An arbitrary parameter 47 input and a predetermined algorithm are used to obtain a temperature control signal for controlling the ambient temperature of the semiconductor integrated circuit 1, and at a predetermined timing, the temperature setting unit 64 and the storage unit 68 Output to.
  • the temperature control unit 63 outputs either the temperature control signal from the temperature control unit 63 or the signal from the storage unit 68 to the temperature setting unit 64 by simply outputting the temperature control signal. You may output the flag for determining whether it uses as a control signal. Further, the temperature control unit 63 outputs a flag for determining whether or not to store the temperature control signal from the temperature control unit 63 just by outputting a temperature control signal to the storage unit 68, or a storage unit A flag for determining whether to output the temperature control signal stored in 68 to the temperature setting unit 64 may be output.
  • the temperature setting unit 64 is input from the temperature control unit 63 or the storage unit 68 at a predetermined timing.
  • the ambient temperature of the semiconductor integrated circuit 1 is set according to the signal.
  • whether the temperature setting unit 64 selects the input signal from the temperature control unit 63 or the input signal from the storage unit 68 is preliminarily set in the inspection device 60 and is determined according to the control. It may be determined according to the data input as an external force as part of the parameter 47, or may be determined according to the flag input from the temperature controller 63 as described above.
  • the method of setting the ambient temperature of the semiconductor integrated circuit 1 is not particularly limited as described in the first embodiment, but the temperature control signal increases or decreases the ambient temperature! /, And 2 If it is a value (or three values including no change in the ambient temperature), the ambient temperature is preferably increased or decreased by a predetermined temperature gradient, and the temperature control signal is calculated. In the case of temperature, it is preferable to set the temperature discretely. At this time, the temperature gradient may be constant or different depending on the temperature control signal input from the temperature control unit 63! /.
  • the storage unit 68 stores the temperature control signal input from the temperature control unit 63 at a predetermined timing, and outputs the stored temperature control signal to the temperature setting unit 64. Whether or not the storage unit 68 stores the temperature control signal input from the temperature control unit 63 and whether or not the temperature control signal stored by the storage unit 68 is output to the temperature setting unit 64 is determined in advance in the inspection apparatus 60. It can be determined according to the data input as an external force input as part of parameter 47 that is set and determined according to its control, or determined according to the flag input from temperature controller 63 as described above. It will be.
  • a non-defective semiconductor integrated circuit semiconductor integrated circuit with a known electrical characteristic test result
  • the temperature control unit 63 obtains a temperature control signal for controlling the ambient temperature of the non-defective semiconductor integrated circuit, and outputs the temperature control signal to the temperature setting unit 64 and the storage unit 68 at a predetermined timing.
  • the temperature control unit 63 outputs a predetermined flag to the temperature setting unit 64 so as to set the temperature according to the signal from the temperature control unit 63, and to the storage unit 68, the temperature control unit 63 Predetermined to store control signal of temperature setting unit 64 input from 63 The flag is output.
  • the temperature setting unit 64 sets the temperature according to the temperature control signal input from the temperature control unit 63, and the storage unit 68 stores the temperature control information.
  • the temperature control unit 63 outputs a predetermined flag to the temperature setting unit 64 so as to set the ambient temperature based on the signal from the storage unit 68, and to the storage unit 68. Then, a predetermined flag is output so that the stored temperature control signal is output to the temperature setting unit 64.
  • the temperature control signal stored in the storage unit 68 is a temperature control signal calculated for a non-defective semiconductor integrated circuit. As a result, the temperature control for the non-defective semiconductor integrated circuit 1 can be applied to a semiconductor integrated circuit that is not good or bad.
  • the self-heating of the semiconductor integrated circuit is reduced by applying the temperature control to the non-defective semiconductor integrated circuit to the semiconductor integrated circuit that is not good or bad. All semiconductor integrated circuits can be tested with the same temperature control.
  • FIG. 8 is a diagram showing a configuration of an inspection apparatus 70 that works on the present embodiment.
  • the same components as those of FIG. 8 are identical to those of FIG. 8.
  • the inspection device 70 includes an LSI tester 71, a handler 72, a temperature control unit 63, a temperature setting unit 74, a current monitor unit 15, a voltage monitor unit 36, and a storage unit 68. It is equipped with.
  • the LSI tester 71 is electrically connected to the packaged semiconductor integrated circuit 1 through a socket, and inspects and evaluates the electrical characteristics of the semiconductor integrated circuit 1.
  • the LSI tester 71 is connected to the handler 72 via a cable or the like, and exchanges the pass / fail judgment result of the semiconductor integrated circuit 1 or the sorting information with the nodler 72. Furthermore, the LSI tester 71 can determine whether or not the semiconductor integrated circuit 1 is good by using the temperature determination signal input from the temperature setting unit 74 in addition to the normal inspection items.
  • the handler 72 is a device that automates the transport and classification of the semiconductor integrated circuit 1, and also includes a temperature control unit 63, a temperature setting unit 74, a current monitoring unit 15, a voltage monitoring unit 36, and a storage. Part With 68!
  • Temperature setting unit 74 sets the ambient temperature of semiconductor integrated circuit 1 in accordance with a signal input from temperature control unit 63 or storage unit 68 at a predetermined timing. In addition, a temperature difference between the temperature set value determined in the storage unit 68 and the temperature set value determined in the temperature control unit 63 is calculated, and whether or not the temperature difference exceeds a predetermined limit value (the temperature difference Outputs to the LSI tester 71 a force judgment signal for force force within the first temperature range.
  • whether the temperature setting unit 74 uses the input signal from the temperature control unit 63 or the input signal from the storage unit 68 is set in advance in the inspection apparatus 70, and depends on the control. It may be selected or may be controlled using data input as an external force as part of the parameter.
  • the predetermined limit value may be set in advance in the inspection apparatus 70, or may be determined using data in which an external force is also input as a part of the parameter.
  • the predetermined limit value for example, the difference between the ambient temperature of a defective semiconductor integrated circuit and the ambient temperature of a non-defective semiconductor integrated circuit can be used.
  • the predetermined limit value includes an upper limit value and a lower limit value. If the calculated temperature difference exceeds the upper limit value or falls below the lower limit value, the temperature setting unit 74 outputs a temperature determination signal to the LSI tester 71 that the calculated temperature difference exceeds the predetermined limit value. If the calculated temperature difference is between the lower limit value and the upper limit value, a temperature judgment signal is output indicating that the calculated temperature difference does not exceed the predetermined limit value. Note that it is not mandatory to set both the upper limit value and the lower limit value. It is possible to set only the upper limit value or only the lower limit value.
  • the method for setting the ambient temperature of the semiconductor integrated circuit 1 is not particularly limited as described in the first embodiment, but whether the temperature control signal increases or decreases the ambient temperature! /, 2 If it is a value (or three values including no change in the ambient temperature), the ambient temperature is preferably increased or decreased by a predetermined temperature gradient, and the temperature control signal is calculated. In the case of temperature, it is preferable to set the temperature discretely. At this time, the temperature gradient may be constant or different depending on the temperature control signal input from the temperature control unit 63! /.
  • FIG. 9 is a diagram for explaining an example of the temperature control method in the present embodiment.
  • the difference (graph (c)) is below the lower limit value (draft (L)).
  • the temperature determination signal is at the low level from timing t0 to timing t8, and is at the high level after timing t8.
  • the LSI tester 71 determines that the semiconductor integrated circuit 1 to be inspected is defective.
  • the ambient temperature setting value and electrical characteristics of the semiconductor integrated circuit 1 in which the quality of electrical characteristics is not satisfactory are excellent. It is possible to compare the set value of the ambient temperature of the semiconductor integrated circuit 1 that is inferior and determine the quality of the electrical characteristics of the semiconductor integrated circuit 1 based on the comparison result. Therefore, the inspection quality of the electrical characteristics can be improved compared with the conventional case where the quality is determined without using the comparison result.
  • the present embodiment may have the following configuration.
  • the temperature control timing is shifted forward by the transition time. Also good. Thereby, the ambient temperature of the semiconductor integrated circuit 1 can be set with higher accuracy.
  • the inspection apparatus according to the present embodiment may be the inspection apparatus according to any one of Embodiments 1 to 7, but the inspection apparatus according to Embodiment 1 (FIG. 1) will be described as an example.
  • the inspection apparatus 80 includes an LSI tester 11, a handler 12, and a temperature control unit 8 3, a temperature setting unit 14, and a current monitoring unit 15.
  • the temperature control unit 83 has one or more intervals and order for the timing at which the temperature setting unit 14 controls the ambient temperature of the semiconductor integrated circuit 1. Set and control the temperature at any one or more timings.
  • intervals and the order are preliminarily set in the inspection device 80 and may be subject to the control thereof, or may be controlled by data input as an external force as the parameter 47.
  • FIG. 10 is a diagram for explaining an example of the temperature control method in the present embodiment.
  • FIG. 10 shows graphs (a) to (c).
  • Graph (a) schematically shows the time change of the current value monitored by the current monitor unit 15, and graph (b) schematically shows the time change of the temperature control signal output by the temperature control unit 83.
  • the graph) schematically shows the time change of the temperature set by the temperature setting unit 14.
  • the timing at which the temperature control unit 83 outputs the temperature control signal to the temperature setting unit 14 and the current monitor unit 15 monitors the current value and controls the current value This is the timing to output to the unit 83.
  • the timing at which the temperature control unit 83 outputs the control signal and the timing at which the current monitor unit 15 monitors and outputs the current value are the same, but they may be different. ,.
  • each interval from tO to t6 is smaller than each interval between t6 force and t9. If the temperature is set at such a timing, the control of the ambient temperature of the semiconductor integrated circuit 1 with respect to the change in the current value can be performed more finely from t6 to t6 than from t6 to t9.
  • the temperature can be set accurately if the timing interval for adjusting the temperature is shortened.
  • the storage unit see Embodiment 6 above
  • the inspection apparatus according to the present embodiment may be the inspection apparatus according to any one of Embodiments 1 to 7, but the inspection apparatus according to Embodiment 1 (FIG. 1) will be described as an example.
  • the inspection apparatus 90 includes an LSI tester 11, a handler 12, and a temperature control unit 9
  • the temperature control unit 93 sets one or more arbitrary periods during which the temperature setting unit 14 does not change the ambient temperature of the semiconductor integrated circuit 1. it can.
  • the arbitrary period is set according to the data input by the external force as part of the parameter 47 that is preliminarily set in the inspection apparatus 90 and may be set according to the control. Also good.
  • FIG. 11 is a diagram for explaining an example of the temperature control method in the present embodiment.
  • the temperature control unit 93 outputs the temperature control signal to the temperature setting unit 14 and the current monitor unit 15 monitors the current value and monitors the current value. This is the timing to output to the degree control unit 93.
  • the timing at which the temperature control unit 93 outputs the control signal and the timing at which the current monitor unit 15 monitors and outputs the current value are the same.
  • FIG. 11 shows graphs (a) to (c) and (X).
  • Graph (a) schematically shows the time change of the current value monitored by the current monitor unit 15, and graph (b) schematically shows the time change of the temperature control signal output by the temperature control unit 93.
  • the graph) schematically shows the time change of the temperature set by the temperature setting unit 14.
  • the graph (X) schematically shows a time change of a signal for controlling whether or not the temperature setting unit 14 changes the temperature.
  • the control signal shown in graph (X) changes the temperature when it is high, and does not change the temperature when it is low.
  • the period when the control signal shown in the graph (x) is at the high level is the timing tl to t4 and the timing t6 to t7.
  • the period when the control signal is at the low level is the timing tO to tl. After timing t4 to t6 and timing t7.
  • the temperature control unit 93 performs the peripheral temperature of the semiconductor integrated circuit 1 with respect to the temperature setting unit 14 after timing tO to timing tl, timing t4 to timing t6, and timing t7. Control so that is not changed.
  • the temperature control unit 93 performs the timing for changing the ambient temperature of the semiconductor integrated circuit 1 (first timing) and the timing for not changing the ambient temperature of the semiconductor integrated circuit 1.
  • Set second timing.
  • the first timing is timing t4 and timing t7
  • the second timing is timing tl and timing t6.
  • the apparatus 90 can cope with such a case.
  • the temperature gradient set by the temperature setting unit and the internal temperature rise / fall gradient due to internal heat generation are greatly different from each other, and the change in internal heat generation is small and the internal heat generation amount increases or decreases monotonously.
  • the rise and fall of the ambient temperature is greater than the rise and fall of the internal heat generation temperature.
  • the inspection apparatus according to the present embodiment may be the inspection apparatus according to any one of Embodiments 1 to 7, but the inspection apparatus according to Embodiment 1 (Fig. 1) will be described as an example.
  • the inspection apparatus 100 includes an LSI tester 11, a handler 12, a temperature control unit 103, a temperature setting unit 14, and a current monitoring unit 15.
  • the temperature control unit 103 is a semi-conductor. Set the upper and lower limits for the ambient temperature of the conductor integrated circuit 1, and control so that the temperature setting unit 14 does not set a temperature that exceeds the upper limit and does not set a temperature that is lower than the lower limit. To do.
  • the temperature control unit 103 sets the second temperature range with respect to the ambient temperature of the semiconductor integrated circuit 1, and prevents the temperature setting unit 14 from setting a temperature outside the second temperature range. Control.
  • the upper limit value and the lower limit value of the second temperature range are preset in the inspection apparatus 100 and may be determined according to the control, or may be input from the outside as part of the parameter 47. In some cases, it may be controlled by data.
  • the upper limit value and the lower limit value are, for example, temperatures indicated by defective semiconductor integrated circuits.
  • FIG. 12 is a diagram for explaining an example of the temperature control method in the present embodiment.
  • the timing tO to t9 is the timing when the temperature control unit 103 outputs the temperature control signal to the temperature setting unit 14, and the current monitor unit 15 monitors the current value and controls the current value. This is the timing to output to the unit 103.
  • the timing at which the temperature control unit 103 outputs the temperature control signal and the timing at which the current monitor unit 15 monitors and outputs the current value are the same. Good!
  • FIG. 12 shows graphs (a) to (c), (U), and (L).
  • Graph (a) shows the change over time of the current value flowing through semiconductor integrated circuit 1
  • graph (b) shows the temperature control signal output from temperature control unit 103 based on the current value in graph (a).
  • the graph (c) shows the time change of the ambient temperature set by the temperature setting unit 14 based on the temperature control signal of the graph (b).
  • the graph (U) shows the upper limit value
  • the graph (L) shows the lower limit value.
  • the temperature control signal (graph (b)) is at the low level, so the set temperature (graph (c)) of the temperature setting unit 14 should drop.
  • the set temperature at the timing t7 is the lower limit value (graph (L))
  • the temperature control unit 103 does not set the temperature lower than the set temperature that the temperature setting unit 14 currently sets. Control so And then. This control continues until the temperature control signal (graph (b)) becomes high level at timing t8.
  • the ambient temperature becomes abnormally high or low when the semiconductor integrated circuit 1 that has some abnormality and does not exhibit the original electrical characteristics is inspected and evaluated. Can be prevented.
  • Embodiments 1 to 10 described above may have the following configurations.
  • thermostreamer that can set the ambient temperature of the semiconductor integrated circuit instead of the handler!
  • the semiconductor integrated circuit to be inspected is in the package state, it may be in the wafer state.
  • the inspection apparatus is connected to the chip of the wafer via a prober or the like.
  • the prober preferably has a function of setting the temperature. ,.
  • the present invention is useful when inspecting the electrical characteristics of a semiconductor integrated circuit.

Landscapes

  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)

Abstract

La présente invention se rapporte à un appareil d'inspection (10) d'un circuit intégré à semi-conducteur comprenant une section d'inspection (11), une unité de commande de la température (13), une section de réglage de la température (14) et une section de surveillance du courant (15). La section d'inspection (11) inspecte et évalue la caractéristique électrique d'un circuit intégré à semi-conducteur (1). La section de surveillance du courant (15) surveille et délivre la valeur d'un courant circulant à travers le circuit intégré à semi-conducteur (1). L'unité de commande de la température (14) calcule un signal de commande de la température pour commander le réglage de la température ambiante du circuit intégré à semi-conducteur (1) en utilisant la valeur du courant et un algorithme prédéterminé et elle délivre le signal de commande de la température. La section de réglage de la température (14) règle la température ambiante du circuit intégré à semi-conducteur (1) selon le signal de commande de la température.
PCT/JP2007/063981 2006-09-01 2007-07-13 Appareil d'inspection d'un circuit intégré à semi-conducteur WO2008026392A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006237368 2006-09-01
JP2006-237368 2006-09-01

Publications (1)

Publication Number Publication Date
WO2008026392A1 true WO2008026392A1 (fr) 2008-03-06

Family

ID=39135679

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/063981 WO2008026392A1 (fr) 2006-09-01 2007-07-13 Appareil d'inspection d'un circuit intégré à semi-conducteur

Country Status (1)

Country Link
WO (1) WO2008026392A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10514416B2 (en) 2017-09-29 2019-12-24 Advantest Corporation Electronic component handling apparatus and electronic component testing apparatus

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001091571A (ja) * 1999-09-21 2001-04-06 Canon Inc 信頼性試験装置及び信頼性試験方法
JP2003248029A (ja) * 2002-02-26 2003-09-05 Matsushita Electric Ind Co Ltd 半導体装置の試験方法
JP2003329724A (ja) * 2002-05-10 2003-11-19 Elpida Memory Inc 半導体試験装置及び半導体試験方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001091571A (ja) * 1999-09-21 2001-04-06 Canon Inc 信頼性試験装置及び信頼性試験方法
JP2003248029A (ja) * 2002-02-26 2003-09-05 Matsushita Electric Ind Co Ltd 半導体装置の試験方法
JP2003329724A (ja) * 2002-05-10 2003-11-19 Elpida Memory Inc 半導体試験装置及び半導体試験方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10514416B2 (en) 2017-09-29 2019-12-24 Advantest Corporation Electronic component handling apparatus and electronic component testing apparatus

Similar Documents

Publication Publication Date Title
US7839158B2 (en) Method of detecting abnormality in burn-in apparatus
US9746520B2 (en) Systems and methods mitigating temperature dependence of circuitry in electronic devices
JP2013518285A (ja) 静止電流（ｉｄｄｑ）指示および試験装置および方法
US20130038340A1 (en) Measuring apparatus and measuring method
US8275569B2 (en) Test apparatus and diagnosis method
CN105102994A (zh) 绝缘检测装置及绝缘检测方法
US7557598B2 (en) Method of inspecting quiescent power supply current in semiconductor integrated circuit and device for executing the method
JP2008002900A (ja) 半導体装置のスクリーニング方法と装置並びにプログラム
WO2008026392A1 (fr) Appareil d'inspection d'un circuit intégré à semi-conducteur
JP2002158265A (ja) 電子デバイスの試験装置及び試験方法
JP2002323546A (ja) リーク電流試験方法及び半導体集積回路
US6989684B2 (en) System for and method of assessing chip acceptability and increasing yield
JP4314096B2 (ja) 半導体集積回路検査装置および半導体集積回路検査方法
JP2834047B2 (ja) 半導体ウェハとその試験方法
JP3592647B2 (ja) 半導体検査装置、半導体集積回路、及び半導体検査方法
JP2007093460A (ja) 半導体試験装置および半導体試験方法
US6720788B2 (en) High resolution current measurement method
JP2010204058A (ja) 回路部品の試験装置および方法
EP1367403B1 (fr) Procédé pour détecter des défauts dans des dispositifs électroniques, basé sur des mesures du courant de repos
JP2008124049A (ja) 半導体チップの検査方法
JP2003084048A (ja) 半導体試験装置
JP2003248029A (ja) 半導体装置の試験方法
JP2021150441A (ja) 検査システム
JPH04190175A (ja) Ｉｃ試験装置
JP2003172763A (ja) 半導体装置の検査装置及び検査方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 07790762

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 07790762

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: JP