WO2008007466A1 - Semiconductor device for high frequency - Google Patents

Semiconductor device for high frequency Download PDF

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Publication number
WO2008007466A1
WO2008007466A1 PCT/JP2007/000757 JP2007000757W WO2008007466A1 WO 2008007466 A1 WO2008007466 A1 WO 2008007466A1 JP 2007000757 W JP2007000757 W JP 2007000757W WO 2008007466 A1 WO2008007466 A1 WO 2008007466A1
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WIPO (PCT)
Prior art keywords
air bridge
semiconductor device
operating region
frequency semiconductor
drain electrode
Prior art date
Application number
PCT/JP2007/000757
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English (en)
French (fr)
Inventor
Masaki Kobayashi
Original Assignee
Kabushiki Kaisha Toshiba
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kabushiki Kaisha Toshiba filed Critical Kabushiki Kaisha Toshiba
Priority to CN2007800021896A priority Critical patent/CN101371345B/zh
Priority to DE112007000161T priority patent/DE112007000161B4/de
Publication of WO2008007466A1 publication Critical patent/WO2008007466A1/ja
Priority to US12/174,660 priority patent/US7763914B2/en

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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/76—Unipolar devices, e.g. field effect transistors
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    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
    • H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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Definitions

  • the present invention relates to a high frequency semiconductor device such as a field effect transistor used at high frequency.
  • FETs field effect transistors
  • a multi-finger type FE T is used.
  • multiple gate electrodes are formed across the active region.
  • the plurality of gate electrodes are connected to a gate wiring formed in parallel with the operation region.
  • the source / drain electrodes are alternately formed on the operating region with the gate electrode interposed therebetween.
  • Each is connected to the bonding pad by source / drain wiring.
  • the gate wiring and the source Z drain wiring cross each other, but a passivation film such as SiN is formed on the gate wiring to insulate them.
  • stray capacitance is generated by directly forming a wiring on a passivation film such as SiN having a high dielectric constant. In particular, it cannot be ignored in the high frequency region. Therefore, in order to reduce the stray capacitance, an air bridge structure in which an upper layer wiring is formed through a space is used (for example, refer to Patent Documents 1 and 2).
  • the source / drain electrodes in such an air bridge structure have an ohmic contact ⁇ ⁇ ⁇ such as Pt / AuGe and a metal layer such as AuZPt / Ti on the operating region. It is formed by sequentially laminating. Then, an Au single-layer plating layer, for example, is formed on the entire surface of the metal layer, the region where the source Z drain bonding pad is formed, and the region connecting them. A wedge is formed.
  • Au constituting the air bridge has a higher coefficient of thermal expansion than a compound semiconductor substrate such as a GaAs substrate. Therefore, the temperature changes from the plating formation temperature (eg 60 ° C) to the energization temperature (eg 2 25 ° C under accelerated evaluation conditions) and the temperature during non-energization (eg room temperature 25 ° C). As a result, thermal expansion and contraction occur in the air bridge. Due to such thermal expansion and contraction, large internal stresses such as compressive stress and tensile stress are generated in the operating region. As a result, problems such as degradation of output characteristics occur, and it is difficult to obtain good reliability.
  • the plating formation temperature eg 60 ° C
  • the energization temperature eg 2 25 ° C under accelerated evaluation conditions
  • non-energization eg room temperature 25 ° C
  • Patent Document 1 Japanese Patent Application Laid-Open No. 9_8064 (Fig. 1 etc.)
  • Patent Document 2 Japanese Patent Laid-Open No. 2 0 1 _ 1 5 5 2 6 (FIG. 1, [0 0 0 4], etc.) Disclosure of the Invention
  • An object of the present invention is to provide a high-frequency semiconductor device capable of suppressing occurrence of problems such as deterioration of output characteristics and obtaining good reliability. Means for solving the problem
  • the operation regions formed in the compound semiconductor substrate, the gate electrodes formed on the operation regions, and the gate electrodes are alternately formed on the operation regions.
  • Source electrode and drain electrode, bonding pad for connection to an external circuit, one end connected to the source or drain electrode outside the operating area, and the other end connected to the bonding pad Provided is a high-frequency semiconductor device comprising an air bridge.
  • FIG. 1 A multi-finger type high-frequency semiconductor device according to one embodiment of the present invention.
  • FIG. 3 is a cross-sectional view of a multi-finger FET element which is a high-frequency semiconductor device according to one embodiment of the present invention.
  • FIG. 4 is a cross-sectional view of a multi-finger type FET element which is a high-frequency semiconductor device according to one embodiment of the present invention.
  • FIG. 5 is a partial cross-sectional view of a multi-finger type FET element which is a high-frequency semiconductor device according to one embodiment of the present invention.
  • FIG. 6 is a plan view of a multi-finger type F ⁇ element which is a high-frequency semiconductor device according to one embodiment of the present invention.
  • FIG. 1 is a plan view of a multi-finger type F E ⁇ ⁇ element that is a high-frequency semiconductor device of the present embodiment
  • FIG. 2 is a cross-sectional view taken along the line __ ⁇ ′.
  • an operation region 12 is formed on the compound semiconductor substrate 11, and a plurality of gate electrodes 13 are formed on the operation region 12.
  • a plurality of source electrodes 14 and drain electrodes 15 are alternately formed in regions including the operation region 12 with the gate electrode 13 interposed therebetween.
  • the source electrode 14 and the drain electrode 15 are configured by sequentially laminating, for example, an ohmic contact such as Pt / fKuGe and a metal layer such as Au / P / i.
  • the gate electrode 13 is bonded to the outside via a gate wiring 16 and connected to a gate pad 17 for inputting and outputting signals.
  • a source pad 18 is formed so as to sandwich each gate pad 17, and a drain pad 19 is formed on the opposite side across the operation region with the gate pad 17 and source pad 18. ing. Furthermore, the source electrode 14 and the source pad 18 and the drain electrode 15 and the drain pad 19 are connected without contacting the gate wiring 16 or a passivation film (not shown) such as the Si N layer.
  • An air bridge 20 is formed. Air bridge 20 is for example single layer gold plated It is formed from layers. The end 20 a of the air bridge 20 is provided so as to be close to the end 12 a of the operation area 12. In the air bridge 20, the connection portion 20 b with the source electrode 14 and / or the drain electrode 15 is disposed outside the operation region 12.
  • the end 20 a of the air bridge 20 is formed so as to be close to the end 12 a of the operation region 12 2, but does not necessarily need to match.
  • the distance d may be separated. This is because the alignment accuracy is taken into consideration so that the air bridge 20 and the operation area 12 do not overlap each other, and d ⁇ 0.2 m is sufficient. It is possible to suppress problems caused by overlapping with the operation area 12 due to misalignment. However, it is preferable to be as close as possible because it leads to an increase in chip size.
  • the end of the source electrode 14 (drain electrode 15) and the end 20c of the lower surface of the air bridge 20 are on the same plane. It does not have to be formed. Furthermore, the area of the connection portion between the air bridge 20 and the source electrode 14 is preferably larger than the area of the cross section ( ⁇ _ ⁇ ′ cross section) in the width direction of the air bridge. The same applies to the connection portion with the drain electrode 15. This is to suppress connection resistance and electric field concentration, and to prevent fusing of wiring due to overcurrent.
  • the air bridge is preferably integrally formed by gold plating.
  • connection portion with the source electrode 14 is composed of a first layer 20 d that becomes a spacer and a second layer 20 e that forms an aerial portion, Good.
  • Drain electrode 1 5, Source pad 1 8, Drain pad 1 9 The same applies to the connecting portion.
  • the entire surface of the source pad 18 and the drain pad 19 may be formed integrally with the air bridge.
  • the source electrode 14 and the drain electrode 15 are not formed with the operation region 12, respectively, and are formed so as to protrude up to the region. It does not have to be.
  • at least the source pad 18 and the drain pad 19 connected to the drain electrode must be projected to the side of the drain electrode 19. Good.
  • GaAs is used as the compound semiconductor substrate, the invention is not limited to this, and a compound semiconductor substrate such as GaN, SiC can be used.
  • An epitaxial wafer may be used.
  • a high concentration layer may be provided under the ohmic contact layer of each electrode by ion implantation, formation of a high concentration epitaxial layer, or the like.
  • Such a configuration is applied not only to HEMT (High Electron Mobility Transistor) but also to FETs such as MES FET (Metal Semiconductor Field Effect Transistor) and MOS FET (Metal oxide, semiconductor field effect transistor). It is possible.
  • HEMT High Electron Mobility Transistor
  • FETs such as MES FET (Metal Semiconductor Field Effect Transistor) and MOS FET (Metal oxide, semiconductor field effect transistor). It is possible.

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  • Condensed Matter Physics & Semiconductors (AREA)
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  • Manufacturing & Machinery (AREA)
  • Junction Field-Effect Transistors (AREA)

Description

明 細 書
高周波用半導体装置
技術分野
[0001 ] 本発明は、 例えば高周波で用いられる電界効果トランジスタなどの高周波 用半導体装置に関する。
背景技術
[0002] 近年、 インバータ回路やスイッチング素子の高機能化に伴い、 電界効果ト ランジスタ （以下 F i e l d Effect Trans i stor： F E Tと記す） において、 さら なる高周波特性、 信頼性の向上が要求されている。
[0003] そのため、 例えば、 マルチフィンガ一型の F E Tが用いられる。 マルチフ ィンガー型の F E Tにおいて、 複数のゲート電極が動作領域を横切るように 形成される。 複数のゲート電極は、 動作領域と平行に形成されるゲート配線 と接続される。 また、 ソース電極/ドレイン電極は、 動作領域上にゲート電 極を挟んで交互に形成される。 そして、 それぞれソースノドレイン配線によ りボンディングパッドと接続される。 このとき、 ゲート配線とソース Zドレ イン配線が交差してしまうが、 これらを絶縁するために、 ゲート配線上に S i Nなどのパシベ一シヨン膜が形成される。
[0004] しかしながら、 このように、 誘電率の高い S i Nなどのパシべ一シヨン膜 上に、 直接配線を形成することにより、 浮遊容量が発生する。 特に高周波領 域において無視できなくなる。 そこで、 この浮遊容量を低減するために、 空 隙を介して上層配線を形成するェアブリッジ構造が用いられている （例えば 特許文献 1、 2参照） 。
[0005] このようなエアブリッジ構造におけるソース/ドレイン電極は、 動作領域 上に例えば P t / A u G eなどのォ一ミックコンタク 卜と、 例えば A u Z P t / T iなどのメタル層が順次積層されて形成される。 そして、 これらメタ ル層上全面とソース Zドレインボンディングパッドが形成される領域、 及び これらを接続する領域に、 例えば A uの単層メツキ層が形成され、 ェアブリ ッジなどが形成される。
[0006] ェアブリッジを構成する A uは、 G a A s基板など化合物半導体基板より 熱膨張率が大きい。 従って、 メツキ形成温度 （例えば 6 0 °C) から、 通電温 度 （例えば加速評価条件の 2 2 5 °C) や、 非通電時の温度 （例えば常温 2 5 °C) のように温度が変動することにより、 エアブリッジにおいて、 熱膨張、 熱収縮が生じる。 そして、 このような熱膨張、 熱収縮により、 動作領域に圧 縮応力、 引張り応力といった大きな内部応力が発生する。 そのため、 出力特 性が劣化するなどの不具合が生じ、 良好な信頼性を得ることが困難であると いう問題がある。
特許文献 1 ：特開平 9 _ 8 0 6 4号公報 （図 1など）
特許文献 2：特開 2 0 0 1 _ 1 5 5 2 6号公報 （図 1、 [ 0 0 0 4 ] など） 発明の開示
発明が解決しょうとする課題
[0007] 本発明は、 出力特性劣化などの不具合の発生を抑え、 良好な信頼性を得る ことが可能な高周波用半導体装置を提供することを目的とするものである。 課題を解決するための手段
[0008] 本発明の一態様によれば、 化合物半導体基板に形成される動作領域と、 動 作領域上に形成されるゲート電極と、 動作領域上にゲ一ト電極を挟んで交互 に形成されるソース電極及びドレイン電極と、 外部回路と接続されるための ボンディングパッドと、 一方の端部がソース電極又はドレイン電極と動作領 域外上で接続され、 他方の端部がボンディングパッドと接続されるェアブリ ッジを備えることを特徴とする高周波用半導体装置が提供される。
発明の効果
[0009] 本発明の一実施態様によれば、 高周波用半導体装置において、 出力特性劣 化などの不具合の発生を抑え、 良好な信頼性を得ることが可能となる。
図面の簡単な説明
[0010] [図 1 ]本発明の一態様による高周波用半導体装置であるマルチフィンガー型の F E T素子の平面図。
[図 2]図 1の Α _ Α ' 断面図。
[図 3]本発明の一態様による高周波用半導体装置であるマルチフィンガー型の F E T素子の断面図。
[図 4]本発明の一態様による高周波用半導体装置であるマルチフィンガー型の F E T素子の断面図。
[図 5]本発明の一態様による高周波用半導体装置であるマルチフィンガー型の F E T素子の部分断面図。
[図 6]本発明の一態様による高周波用半導体装置であるマルチフィンガー型の F Ε Τ素子の平面図。
発明を実施するための最良の形態
[001 1 ] 以下本発明の実施形態について、 図を参照して説明する。
[0012] 図 1に本実施形態の高周波用半導体装置であるマルチフィンガー型の F E Τ素子の平面図を、 図 2にその Α _ Α ' 断面図を示す。 図に示すように、 化 合物半導体基板 1 1に動作領域 1 2が形成され、 この動作領域 1 2上に、 複 数のゲート電極 1 3が形成されている。 そして、 動作領域 1 2上を含む領域 に、 ゲート電極 1 3を挟んで交互にそれぞれ複数のソース電極 1 4、 ドレイ ン電極 1 5が形成されている。 ソース電極 1 4、 ドレイン電極 1 5は、 例え ば P t / fK u G eなどのォ一ミックコンタク 卜と、 例えば A u / P / i などのメタル層が順次積層されて構成されている。 ゲート電極 1 3は、 ゲ一 ト配線 1 6を介して、 外部にボンディングされ、 信号を入出力するためのゲ -トパッド 1 7に接続されている。
[0013] そして、 各ゲートパッド 1 7を挟むように、 ソースパッド 1 8が形成され 、 ゲートパッド 1 7、 ソースパッド 1 8と、 動作領域を挟んで反対側にドレ インパッド 1 9が形成されている。 さらに、 ゲート配線 1 6或いは S i N層 などのパシべ一シヨン膜 （図示せず） と接することなく、 ソース電極 1 4と ソースパッド 1 8、 ドレイン電極 1 5と ドレインパッド 1 9を接続するエア ブリッジ 2 0が形成されている。 エアブリッジ 2 0は、 例えば単層金メッキ 層より形成されている。 このエアブリッジ 2 0の終端 2 0 aは、 動作領域 1 2の端部 1 2 a上に近接するように設けられる。 エアブリッジ 2 0において 、 ソース電極 1 4及び/又はドレイン電極 1 5との接続部 2 0 bは、 動作領 域 1 2上外に配置されている。
[0014] このような構造により、 エアブリッジ 2 0において、 温度の変動により基 板との熱膨張率の差による熱膨張、 熱収縮が生じた場合でも、 動作領域 1 2 における圧縮応力、 引張り応力といった大きな内部応力の発生が抑えられる 。 従って、 出力特性が劣化するなどの不具合を抑えることができ、 良好な信 頼性を得ることが可能となる。
[0015] 本実施形態において、 ェアブリッジ 2 0の終端 2 0 aは、 動作領域 1 2の 端部 1 2 a上に近接するように形成されているが、 必ずしも一致する必要は ない。 図 3に断面図を示すように、 距離 d離間していてもよい。 これは、 ェ アブリッジ 2 0と、 動作領域 1 2が重ならないように、 位置合せ精度を考慮 するためであり、 d≤0 . 2 m程度であればよい。 合せずれにより動作領 域 1 2と重なることによる不具合を抑えることができる。 しかしながら、 チ ップサイズの増大につながることから、 できるだけ近接していることが好ま しい。
[001 6] また、 図 4に部分断面図を示すように、 ソース電極 1 4 (ドレイン電極 1 5 ) の端部と、 エアブリッジ 2 0の下面の端部 2 0 cとは、 同一平面上に形 成されていなくてもよい。 さらに、 エアブリッジ 2 0と、 ソース電極 1 4と の接続部の面積が、 エアブリッジの幅方向における断面 （Β _ Β ' 断面） の 面積より大きいことが好ましい。 ドレイン電極 1 5との接続部分においても 同様である。 接続抵抗と電界集中を抑え、 過電流による配線の溶断を防ぐた めである。
[001 7] また、 エアブリッジは一体で金メッキにより形成されることが好ましい。
しかしながら、 図 5に断面図を示すように、 ソース電極 1 4との接続部分が スぺーサとなる第 1層 2 0 dと、 空中部分を構成する第 2層 2 0 eから構成 されてもよい。 ドレイン電極 1 5、 ソースパッド 1 8、 ドレインパッド 1 9 との接続部分においても同様である。 また、 ソースパッド 1 8、 ドレインパ ッド 1 9全面が、 エアブリッジと一体で形成されてもよい。
[0018] また、 本実施形態において、 ソース電極 1 4、 ドレイン電極 1 5は、 夫々 動作領域 1 2の形成されていなし、領域上まで突出するように形成されている 力 必ずしも、 両端が突出してなくてもよい。 動作領域 1 2外に接続領域を 設けるために、 図 6に平面図を示すように、 少なくとも夫々ソース電極、 ド レイン電極と接続されるソースパッド 1 8、 ドレインパッド 1 9側に突出し ていればよい。
[0019] また、 化合物半導体基板としては、 G a A sを用いたが、 これに限定され るものではなく、 G a N、 S i Cなどの化合物半導体基板を用いることがで きる。 ェピタキシャルウェハを用いてもよい。 また、 各電極のォ一ミックコ ンタク 卜の下層に、 イオン注入、 高濃度ェピタキシャル層の形成などにより 、 高濃度層を設けてもよい。
[0020] このような構成は、 H EMT (High Electron Mobility Transistor) の他 、 MES FET (Metal Semiconductor Field Effect Transistor) や、 MO S FET (Metal oxide、 semiconductor field effect transistor) などの FETなどにおいて適用することが可能である。
[0021] 尚、 本発明は、 上述した実施形態に限定されるものではない。 その他要旨 を逸脱しない範囲で種々変形して実施することができる。

Claims

請求の範囲
[1 ] 化合物半導体基板に形成される動作領域と、
前記動作領域上に形成されるゲート電極と、
前記動作領域上に前記ゲ一ト電極を挟んで交互に形成されるソース電極及 びドレイン電極と、
外部回路と接続されるためのボンディングパッドと、
一方の端部が前記ソース電極又は前記ドレイン電極と前記動作領域外上で 接続され、 他方の端部が前記ボンディングパッドと接続されるエアブリッジ を備えることを特徴とする高周波用半導体装置。
[2] 請求項 1に記載の高周波用半導体装置において、 前記エアブリッジは、 A
U層を備える。
[3] 請求項 2に記載の高周波用半導体装置において、 前記 A u層は、 単層メッ キ層である。
[4] 請求項 1に記載の高周波用半導体装置において、 前記ェアブリッジと前記 ソース電極又は前記ドレイン電極との接続部の終端が、 前記動作領域の前記 ェアブリッジ側の端部上に近接している。
[5] 請求項 1に記載の高周波用半導体装置において、 前記ェアブリッジと前記 ソース電極又は前記ドレイン電極との接続部の終端が、 前記動作領域の前記 ェアブリッジ側の端部上と離間している。
[6] 請求項 5の高周波用半導体装置において、 前記エアブリッジと前記ソース 電極又は前記ドレイン電極との接続部の終端と、 前記動作領域の前記エアブ リッジ側の端部との距離 d力 d≤0 . である。
[7] 請求項 1の高周波用半導体装置において、 前記エアブリッジと、 前記ソ一 ス電極又は前記ドレイン電極との接続面積が、 前記ェアブリッジの幅方向に おける断面の面積より大きい。
[8] 請求項 1の高周波用半導体装置において、 前記化合物半導体基板は G a A
s基板である。
PCT/JP2007/000757 2006-07-12 2007-07-12 Semiconductor device for high frequency WO2008007466A1 (en)

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