WO2007135794A1 - Suspension épaisse pour polissage mécanique chimique, procédé de polissage mécanique chimique et processus de fabrication de dispositif électronique - Google Patents

Suspension épaisse pour polissage mécanique chimique, procédé de polissage mécanique chimique et processus de fabrication de dispositif électronique Download PDF

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WO2007135794A1
WO2007135794A1 PCT/JP2007/053629 JP2007053629W WO2007135794A1 WO 2007135794 A1 WO2007135794 A1 WO 2007135794A1 JP 2007053629 W JP2007053629 W JP 2007053629W WO 2007135794 A1 WO2007135794 A1 WO 2007135794A1
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particles
chemical mechanical
mechanical polishing
slurry
ceria
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PCT/JP2007/053629
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English (en)
Japanese (ja)
Inventor
Ryo Ota
Takayuki Nakakawaji
Toranosuke Ashizawa
Naoyuki Koyama
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Hitachi Chemical Company, Ltd.
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Publication of WO2007135794A1 publication Critical patent/WO2007135794A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step

Definitions

  • the present invention relates to a CMP slurry used in a chemical mechanical polishing (CMP) process indispensable for a shallow trench isolation (STI) method applied to a semiconductor device manufacturing process, and a process using the slurry.
  • CMP chemical mechanical polishing
  • STI shallow trench isolation
  • the present invention relates to a mechanical polishing method and a method for manufacturing an electronic device using the method, and enables both low scratching property of the object to be polished and high processing efficiency by high-speed polishing. This also enables high flatness of the workpiece surface.
  • the element isolation method has been developed from LOCOS (Local Oxidation of Silicon) technology, which removes the nitride film by oxidizing part of the silicon surface.
  • LOCOS Local Oxidation of Silicon
  • STI Integrated Circuit
  • CMP Chemical mechanical polishing
  • SiO 2 silica
  • ceria (oxy-cerium CeO) abrasive grains have excellent polishing ability for silicon oxide films.
  • flattening additive an additive intended to flatten the surface to be carburized by polishing
  • the electrostatic action between the particles is weakened and the composite iron is removed.
  • a method using a mixture of organic particles and inorganic particles as an abrasive grain has also been proposed, but the organic particles are complex so that they act as hindering polishing, thereby obtaining a sufficient polishing rate.
  • a common ceria-based slurry used in STI-CMP is known to contain a leveling additive.
  • a leveling additive a water-based high-molecular compound is used. However, it is preferred because it has less adhesion to the material to be polished and piping.
  • the planarizing additive By blending the planarizing additive, the polishing selectivity between the silicon oxide film and the silicon nitride film as the polishing stagger film is increased, and the flatness and uniformity of the work surface to be polished can be obtained.
  • the polishing rate decreases because the flattening additive has a protective action against polishing.
  • inorganic particle-coated composite particles in addition to the electrostatic composite method, There is a method of manufacturing by applying mechanical energy.
  • a composite particle is produced by locally and intermittently melting the surface layer of a particle using a pressing force, a shearing force, and a frictional force.
  • the inorganic particle-coated composite particles produced by this method have high adhesion strength between the particles, so that the inorganic particles are not detached by shearing force or contact stress during polishing, and a planarizing additive is not used. Even when blended, the inorganic particles are not detached by electrostatic action.
  • this method has a problem in that the V selectivity and the polishing selectivity are not developed at all when the planarizing additive is not blended, and when the planarizing additive is blended, the polishing rate is greatly reduced.
  • Patent Document 1 JP 2001-152135 A
  • the present invention obtains a low scratch property of the surface to be polished to be polished in the CMP process, realizes a high polishing rate and enables a high processing efficiency, and further improves the processing surface.
  • An object of the present invention is to provide a chemical mechanical polishing slurry capable of obtaining flatness, a mechanical mechanical polishing method using the slurry, and an electronic device manufacturing method using the method.
  • the organic mother particles constituting the composite particles of the abrasive grains (A) according to the present invention include polymethyl methacrylate (PMMA) particles into which carboxyl groups or sulfonyl groups have been introduced to make the zeta potential negative. , Polystyrene particles, and copolymer particles thereof.
  • PMMA polymethyl methacrylate
  • the organic mother particles according to the present invention require a certain heat resistant temperature and hardness, crosslinked organic mother particles are preferable. Therefore, for example, monodisperse particles produced by a production method such as a soap-free emulsion polymerization method or a dispersion polymerization method are more preferred.
  • the particle size of the organic mother particles is required to be 0.3 to LO / z m.
  • the reason for this is that if the particle size of the organic mother particles does not reach 0.3 ⁇ m, problems such as a significant decrease in the polishing rate, which makes it difficult to combine with the inorganic particles, occur. If the diameter exceeds 10 m, the dispersion state of the slurry becomes very bad, and there is also a problem that it is not possible to supply a slurry having a uniform particle size to the polished surface.
  • the particle diameter of the organic mother particles is most preferably in the range of 1 to 7111.
  • the inorganic particles constituting the composite particles used in the abrasive grains (A) according to the present invention include cerium oxide (CeO), manganese trioxide (MnO), cerium hydroxide (Ce (OH)).
  • ceria particles which are cerium oxide
  • STI CMP process staggered silicon nitride (Si N) film and silicon nitride
  • Polishing selectivity (SiO 2 / Si N polishing rate ratio) of the base film is easily obtained by the flattening additive
  • the inorganic particles according to the present invention have an average particle size in the range of 10 to 500 nm. The reason is that if the average particle size of the inorganic particles does not reach 10 nm, the polishing speed decreases, and if the average particle size of the inorganic particles exceeds 500 nm, scratches on the object to be polished will occur. This is because there arises a problem that the property becomes large.
  • There are a gas phase method, a liquid phase method, and the like as methods for producing inorganic particles but since the composite particles according to the present invention are produced by a dry composite method, the inorganic particles according to the present invention are produced. In consideration of the properties and the like, it is preferable to use particles that can also generate a gas phase method. Further, since the surface coverage of the organic mother particles by the inorganic particles is higher as the rate is higher, the surface coverage according to the present invention is preferably 20% or more.
  • the composite particles (gunlets) are in contact with water (B).
  • the concentration should be 2 to 10% by weight. The reason is that if the numerical value does not reach 0.2% by weight, a sufficient polishing speed cannot be obtained, and if it exceeds 10% by weight, the dispersion state of the slurry becomes very bad. This is because.
  • a slurry in which the numerical value is 0.5 to 5% by weight is more preferable.
  • the flatness additive (C) according to the present invention is adsorbed on the inorganic insulating film when the CMP slurry comes into contact with the inorganic insulating film to be polished, for example, the silicon oxide film or the silicon nitride film.
  • the slurry for CMP is a silicon oxide film or silicon nitride to be polished.
  • a material that adsorbs to the film when it contacts the film and desorbs from the film due to an increase in polishing surface pressure is preferable.
  • flattening additives (C) include poly (meth) acrylic acid, poly (meth) acrylic acid derivatives, poly (meth) acrylic acid ammonium salt, polybutyropyrrolidone, poly (bi) acetal. , Polyvinyl formal, polyvinyl butyral, polyvinyl pyrrolidone iodine complex, polybule (5-methyl-2 pyrrolidinone), polybule (2 piberidinone), polyvinyl (3, 3, 5 trimethyl 2 pyrrolidinone), poly (N bullcarbazole), poly (N— Alkyl-pyrcarbazole), poly (N-alkyl 3-vinylcarba) Sol), poly (N-alkyl-4 bulcarbazole), poly (N beluo 3, 6- dib mouth mocarbazole), polybureol ketone, polyburacetophenone, poly (4 bulupyridine), poly (4 ⁇ -Hydroxyethylpyridine), poly (2 butyl formal
  • the upper limit of the weight of the flat wrinkle additive is preferably 500 or more, but it is preferably 1 million or less in view of solubility.
  • a nonionic surfactant and an anionic surfactant can be mentioned, but it is preferable to use a surfactant that does not contain alkali metal.
  • these surfactants in particular, polyethylene glycol type nonionic surfactants, glycols, glycerin fatty acid esters, sorbit fatty acid esters, fatty acid alcohol amides, alcohol sulfate salts, alkyl ether sulfate salts And at least one selected from alkylbenzene sulfonate and alkyl phosphate ester.
  • the addition amount of the planarizing additive is preferably in the range of 0.05 to 5% by weight with respect to 100 parts by weight of the slurry for CMP. The reason is that if the addition amount of the planarization additive is less than the lower limit than this range, the effect of addition may not appear, and if it exceeds the upper limit, the polishing rate may decrease.
  • a dispersant, a pH adjuster, and the like may be added to the chemical mechanical polishing slurry according to the present invention.
  • the dispersant needs to be selected depending on the inorganic particles constituting the organic particles. For example, in the case where cerium oxide is used as the inorganic particles, a polyacrylic acid ammonium salt or a copolymer component is used.
  • a polymer dispersant containing an acrylic acid ammonium salt is preferred.
  • Other dispersants include triethanolamine lauryl sulfate, ammonium lauryl sulfate, polyoxyethylene alkyl ether triethanolamine sulfate, special polycarboxylic acid type polymer, polyoxyethylene lauryl ether, polyoxyethylene cetyl ether.
  • the amount of the above-mentioned dispersant added is determined based on the dispersibility of particles in the slurry for CMP and sedimentation prevention, and in addition to the relationship between polishing scratches and the amount of dispersant added, ceria particles (acid cerium particles) 100
  • the amount is preferably in the range of 0.01 to 2.0 parts by weight with respect to parts by weight.
  • the molecular weight of the dispersant is preferably in the range of 100-50,000, and more preferably in the range of 1,000,000 to 10,000.
  • the molecular weight of the dispersing agent is less than 100, a sufficient polishing rate may not be obtained when polishing the silicon oxide film or the silicon nitride film, while the molecular weight of the dispersing agent is 50 , Over 000 In some cases, the viscosity increases and the storage stability of the CMP slurry may decrease.
  • the slurry for chemical mechanical polishing according to the present invention uses a composite particle having a negative zeta potential for the abrasive grains, thereby increasing the polishing rate even when the flattening additive (C) is not blended. It is possible to maintain high speed and to obtain sufficient polishing selectivity for obtaining flatness of the work surface.
  • the slurry for chemical mechanical polishing according to the present invention can be obtained by adding the flattening additive (C) when the zeta potential of the composite particle abrasive grains is positive even when the flattening additive (C) is blended. When the adsorbed amount increases, the polishing rate decreases significantly.
  • composite particles with a negative zeta potential for the abrasive grains the adsorbed amount of the leveling additive (C) is suppressed and a high polishing rate is achieved. And sufficient polishing selectivity can be obtained.
  • the chemical mechanical polishing slurry, the mechanical mechanical polishing method using the slurry, and the electronic device manufacturing method using the method according to the present invention include abrasive grains (A), water (B),
  • the abrasive grains (A) are made of ceria particle-coated composite particles of organic mother particles and ceria particles, and the composite grains have a zeta potential of a negative potential (A ), It is possible to obtain a low scratch property of the surface to be polished in the CMP process and to obtain a high processing efficiency based on a high-speed polishing process.
  • the chemical mechanical polishing slurry, the mechanical mechanical polishing method using the slurry, and the electronic device manufacturing method using the method according to the present invention are flat on the chemical mechanical polishing slurry.
  • the addition of the additive (C) also has an effect that the flatness of the work surface to be polished can be obtained.
  • FIG. 1 is a schematic cross-sectional view of an inorganic particle-coated composite particle according to the present invention.
  • FIG. 2 is a schematic cross-sectional view of polishing using composite particles.
  • a method for producing dry composite particles of organic mother particles and inorganic particles there are, for example, a composite method using a mechano-fusion system manufactured by Hosoka Micron Corporation and a hybridization system manufactured by Nara Machinery Co., Ltd. These composite methods are technologies that produce composite particles by mechanically bonding them at a molecular level by applying frictional pressure and shearing force based on mechanical energy to multiple different material particles. . These methods are characterized by a simple process and a high degree of freedom in combination as compared with a method for producing wet composite particles.
  • the polishing test is to measure the polishing rate for silicon dioxide (SiO 2) film using a polishing device (IMRTECH10DVT) manufactured by Engis Co., Ltd.
  • a polishing pad (IC1000 / Suba400 manufactured by Yutta Noose Co., Ltd.) is pasted on the top, and the same pad is also pasted on the bottom of the guide ring.
  • the polishing load was adjusted by the number of polishing weights, the load was 30 kPa, the number of rotations of the surface plate was 150 / min, and the polishing time was 2 minutes.
  • the slurry was continuously dripped (15 ml / min) with a tube pump and supplied.
  • the polished silicon dioxide silicon wafer was subjected to ultrasonic cleaning with pure water for 10 minutes and dried.
  • the film thickness of the silicon dioxide film was measured by measuring the difference in film thickness before and after polishing using an optical interference type film thickness measuring device and calculating the polishing rate.
  • Examples 1 to 3 of the slurry for chemical mechanical polishing according to the present invention are all made of polymethyl methacrylate (PMMA) monodisperse particles (5) as organic mother particles and ceria (CeO) particles as inorganic particles.
  • PMMA polymethyl methacrylate
  • CeO ceria
  • the composite particles are produced so that the zeta potential of the composite particles becomes a negative potential by using composite particle abrasive particles obtained by combining double particles (14 nm) by the dry composite particle manufacturing method.
  • the zeta potential of the produced composite particle abrasive grains is difficult to measure for high-concentration slurry, large-diameter particles, composite particles, etc. with the ordinary laser Doppler method. This was measured using ESA-9800 manufactured by Matec Applied Sciences. composite
  • the zeta potential of the particles was ⁇ 40 mV in Example 1, ⁇ 20 mV in Example 2, and 5 mV in Example 3.
  • the slurries of these examples are obtained by introducing the carboxyl group into the organic mother particles and changing the concentration to obtain the negative potential composite particles in which the zeta potential is adjusted.
  • the above polishing test was carried out at an abrasive concentration (weight ratio of abrasive grains to water) of 1% by weight.
  • SiO polishing selectivity of the workpiece to be polished
  • a Si N film wafer is taken up as a polishing stagger film, and the polishing rate ratio
  • Comparative Examples 1 and 2 were prepared using conventional polymethyl methacrylate to obtain positive-potential composite particles.
  • Comparative Example 3 is a single nanoceria used as an inorganic particle for comparison of polishing rate.
  • Table 1 shows the evaluation results of the chemical mechanical polishing slurries of Examples 1 to 3 and Comparative Examples 1 to 3.
  • the same effect can be obtained by using organic mother particles obtained by introducing functional groups into force polystyrene particles using PMMA as a base material for the organic mother particles of Examples 1 to 3.
  • the dry composite particles described above were used. However, even when wet composite particles obtained by heteroaggregation were used, higher speed polishing was possible, and a large polishing selectivity was obtained. I helped.
  • the barrel used in the examples is described as if it was a composite particle alone. However, in the dry composite particle manufacturing method, it is not 100% composite, so it is actually composite. This includes nanoceria that has not been treated. If the surface coverage of the composite particles is the same, the higher the amount of non-composited nanoceria, the higher the polishing rate of the SiO film.
  • a thermal oxide film using HDP—TEOS High Density Plasma-Tetra Ethoxy Silane
  • HDP—TEOS High Density Plasma-Tetra Ethoxy Silane
  • SOG Spin on Glass
  • the polishing test was performed under the same conditions as in Examples 1 to 3.
  • the slurry for chemical mechanical polishing of Examples 4 to 7 is a composite particle abrasive of PMMA monodispersed particles (5), inorganic particles and CeO particles (14 nm) used in Example 2, and has a zeta potential. -20mV
  • the barrel concentration which is the weight ratio of the barrel to water, was 0.2% by weight in Example 4, 1.5% by weight in Example 5, 5% by weight in Example 6, and 10% by weight in Example 7. did.
  • Comparative Examples 4 and 5 both use the composite particles of the granule used in Example 2, but Comparative Example 4 has an abrasive concentration of 0. 1% by weight, and Comparative Example 5 was also 20% by weight, and the same polishing test as in Examples 1 to 3 was performed.
  • the evaluation results of Examples 4 to 7 and Comparative Examples 4 and 5 are shown in Table 2.
  • each of the chemical mechanical polishing slurries of Examples 4 to 7 has an excellent polishing ability that the SiO film polishing rate is very high as compared with Comparative Example 4.
  • Comparative Example 4 having a grain concentration of 0.1% by weight, the polishing rate is greatly reduced, and a practically sufficient polishing rate cannot be obtained.
  • Comparative Example 5 with the 20% by weight of the granule concentration is almost saturated with no difference in polishing rate as compared with Example 7 having the 10% by weight of the barrel density. Further, although Comparative Example 5 is not described in the table, it has been found that the dispersion state of the barrel is very bad.
  • the slurry for chemical mechanical polishing of Examples 8 to 11 is composed of PMMA monodispersed particles as organic matrix particles and CeO particles (as inorganic particles) (
  • the average particle diameter of the PMMA monodispersed particles used as the organic mother particles is 0 in Example 8.
  • Example 9 1.5 m, in Example 10, 5 ⁇ m, and in Example 11, 10 ⁇ m. Since the average particle size of the inorganic particles is 14 nm, which is sufficiently smaller than the mother particle, the average particle size of the above-mentioned PMMA monodispersed particles should be the average particle size of the composite particles that are abrasive grains as they are. Can do. Since PMMA has a carboxyl group introduced, the produced composite particles have a negative zeta potential. In addition to the polishing rate, the scratches on the polished wafer were observed.
  • Comparative Examples 6 and 7 use composite particle abrasive grains of PMMA monodisperse particles as organic mother particles and Ce02 particles (14 nm) as inorganic particles, the abrasive concentration is 1% by weight, and the zeta of the composite particles.
  • the negative potential was the same as in Examples 8 to 11.
  • the particle size of the PMMA monodispersed particles of the organic mother particles that is, the particle size of the composite particles was 0.15 m in Comparative Example 6. In Comparative Example 7, it is 20 ⁇ m.
  • Table 3 shows the evaluation results of Examples 8 to 11 and Comparative Examples 6 and 7, which were carried out under the same conditions as the polishing test method described above.
  • the slurry for chemical mechanical polishing in Examples 8 to 11 is the polishing rate of the SiO film.
  • Example 9 where the average particle size of the composite particles was 1.5 m, the fastest polishing rate was obtained.
  • Comparative Example 6 in which the average particle size of the composite particles was 0.15 m, the polishing rate was greatly reduced, and it was difficult to obtain a sufficient polishing rate.
  • Comparative Example 7 in which the average particle size of the composite particles was 20 m, a sufficient polishing rate was obtained, but many scratches were observed on the polished work surface, and the dispersion state of the slurry was very bad. .
  • the average particle size of the organic mother particle is less than m: 1 Most preferred is about ⁇ 7 / ⁇ ⁇ .
  • the average particle size of composite particle abrasive grains is largely related to the type of polishing pad, especially the pattern of the polishing pad made of porous urethane resin and its surface roughness, so it is suitable for the polishing pad used. It is necessary to select the diameter.
  • each of the chemical mechanical polishing slurries of Examples 1 to 3 is blended with poly (meth) acrylic acid ammonium salt as a planarizing additive.
  • the amount thereof for water 0.3 wt 0/0, Roita value of the slurry is 5 with ammonia, the abrasive concentration is the weight ratio cannon particle of water 1. obtained by a 0% Yes, the zeta potential before compounding the leveling additive is ⁇ 40 mV in Example 12, ⁇ 20 mV in Example 13 and 5 mV in Example 14.
  • Comparative Example 8 to LO The slurry of Comparative Examples 1 to 3 is blended with poly (meth) acrylate ammonium salt as a planarizing additive. The blending amount is 0.3% by weight with respect to water, the pH value of the slurry is 5 with ammonia, and the barrel concentration, which is the weight ratio of the barrel to water, is 1.0% by weight. .
  • Table 4 shows the evaluation results of Examples 12 to 14 and Comparative Examples 8 to 10 which were carried out under the same conditions as the polishing test method described above.
  • each of the chemical mechanical polishing slurries of Examples 12 to 14 has excellent polishing ability with a very high polishing rate of the SiO film compared to Nanoceria alone of Comparative Example 10.
  • Comparative Examples 8 and 9 used composite particles having a positive zeta potential. However, if a leveling additive having a protective action for polishing is blended, the polishing rate is greatly reduced. On the other hand, the chemical mechanical polishing slurries of Examples 12 to 14 using composite particles having a negative zeta potential showed a significant speed although a slight decrease in the polishing rate was observed even when a planarizing additive was added. There is no decrease, and polishing selectivity can be maintained.
  • Examples 12 to 14 since the zeta potential of the composite particles is set to a negative potential, the sulfonyl group becomes a negative potential in the functional group using the organic mother particles in which a carboxyl group is introduced into PMMA. Organic mother particles into which other functional groups are introduced may be used. In addition, the same effect can be obtained by using organic mother particles in which a functional group is introduced into force polystyrene particles using PMMA as a base material for the organic mother particles of Example 12 having a force of 14.
  • the pH value of the slurry containing the flat koji additive was set to 5. However, if the pH value is within the range of 4 to 8, the same results as in Examples 12 to 14 can be obtained. .
  • the planarizing additive is not limited to poly (meth) acrylic acid ammonium salt, but is added to an inorganic insulating film such as a SiO film or a SiN film placed as a workpiece to be polished when blended. Adsorbed when contacted, polished surface
  • Any type that desorbs due to an increase in pressure may be used.
  • Examples 15 to 18 are composite particles of PMMA monodispersed particles (5 ⁇ ) used in Examples 2 and 13 and inorganic particles with CeO particles (14 nm).
  • Comparative Examples 11 and 12 both use the composite particles of the above-mentioned composite particles used in Examples 2 and 13, but the comparative example 11 has a particle concentration that is a weight ratio to water. 1% by weight and 20% by weight in Comparative Example 2.
  • each of the chemical mechanical polishing slurries of Examples 15 to 18 has an excellent polishing ability with a very high SiO film polishing rate as compared with Comparative Example 11.
  • Abrasive grain concentration As Table 5 shows, each of the chemical mechanical polishing slurries of Examples 15 to 18 has an excellent polishing ability with a very high SiO film polishing rate as compared with Comparative Example 11. Abrasive grain concentration
  • the average particle size of the composite particle granules did not reach 0.3 m.
  • the polishing speed was greatly reduced, and it was difficult to obtain a practical polishing speed.
  • the average particle size of the composite particles was 20 ⁇ m, the polishing rate was sufficient, but many scratches were observed, and the dispersion state of the slurry became very poor. From the above results, it was found that the average particle size of the composite particle can be in the range of 0.3 to 10 ⁇ m.
  • the type of polishing pad especially the polishing pad made of porous urethane resin
  • the polishing rate was compared by taking a Si N film wafer as the stock film.
  • the slurry for chemical mechanical polishing used in 9-22 is a composite particle of PMMA monodispersed particles (5 ⁇ m) with zeta potential of ⁇ 20 mV used in Example 13 and CeO particles (14 nm) on inorganic particles.
  • the abrasive concentration which is the weight ratio of the abrasive grains to water
  • poly (meth) acrylic acid ammonium salt added as a leveling agent is added.
  • the pH value of the slurry is adjusted to 5 by using ammonia.
  • the leveling agent concentration which is the ratio of poly (meth) acrylic acid ammonium salt as a leveling agent to water, 0.05% by weight in Example 19 and 0.3% by weight in Example 20 In Example 21, 1.0% by weight, and in Example 22, 5.0% by weight.
  • Comparative Examples 13 and 14 use the same composite particle abrasive as in Examples 19 to 22 with a leveling agent concentration of 1.0% by weight.
  • the strength of the flattening agent concentration which is the ratio of the poly (meth) acrylic acid ammonium salt as a leveling agent to water, is 0.001% by weight for Comparative Example 13 and 10% by weight for Comparative Example 14
  • the pH value of the slurry was adjusted to 5 with ammonia.
  • Examples 19 to 22 and Comparative Examples 13 and 14 were carried out under the same conditions as in the above polishing test method for confirming the effects of the examples. Table 6 shows the results.
  • Comparative Example 13 in which the leveling agent concentration is 0.01% by weight is the SiO film polishing rate.
  • the speed is very fast, it is sufficiently flat because it polishes even the SiN film, which is a staggered film.
  • the present invention is also used as an abrasive in a process that requires reduction of scratches such as CMP in an interlayer dielectric (ILD). Is also applicable.
  • the present invention can be applied to an abrasive used in a process in which scratch reduction is required in CMP (STI—CMP in addition to STI-CMP, etc.) in a semiconductor device which is an electronic device. .

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Abstract

La présente invention concerne une suspension épaisse pour un polissage mécanique chimique qui dans l'étape de PMC d'un dispositif semi-conducteur, non seulement entraîne peu de rayure sur une surface destinée à être polie de film de SiO2, etc. mais également atteint une vitesse de polissage élevée pour ainsi obtenir un rendement de traitement important ; un procédé de polissage mécanique chimique qui utilise la suspension épaisse ; et un processus de fabrication d'un dispositif électronique qui utilise le procédé. La suspension épaisse pour polissage mécanique chimique comprend des grains abrasifs et de l'eau, les grains abrasifs étant constitués de grains composites enduits de particules d'oxyde de cérium, chacun composés d'un grain de base organique et de particules d'oxyde de cérium, les grains composites présentant un potentiel zêta négatif. En outre, la présente invention concerne des suspensions épaisses dans lesquelles les grains abrasifs sont constitués de grains composites enduits de particules d'oxyde de cérium, chacun composés d'un grain de polyméthacrylate de méthyle carboxylé et de particules d'oxyde de cérium, et un additif de planéité est mélangé, l'additif de planéité étant du poly(méth)acrylate d'ammonium.
PCT/JP2007/053629 2006-05-19 2007-02-27 Suspension épaisse pour polissage mécanique chimique, procédé de polissage mécanique chimique et processus de fabrication de dispositif électronique WO2007135794A1 (fr)

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WO2013191139A1 (fr) * 2012-06-19 2013-12-27 株式会社 フジミインコーポレーテッド Composition de polissage et procédé de fabrication de substrat utilisant ladite composition
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JP2017071753A (ja) * 2015-06-05 2017-04-13 エア プロダクツ アンド ケミカルズ インコーポレイテッドＡｉｒ Ｐｒｏｄｕｃｔｓ Ａｎｄ Ｃｈｅｍｉｃａｌｓ Ｉｎｃｏｒｐｏｒａｔｅｄ セリア被覆シリカ研磨剤を使用したバリア化学機械平坦化スラリー

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KR20140024634A (ko) * 2012-08-20 2014-03-03 삼성전자주식회사 반도체 소자의 제조 방법
US11549034B2 (en) 2018-08-09 2023-01-10 Versum Materials Us, Llc Oxide chemical mechanical planarization (CMP) polishing compositions
US20200270479A1 (en) * 2019-02-26 2020-08-27 Versum Materials Us, Llc Shallow Trench Isolation Chemical And Mechanical Polishing Slurry
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CN115011254B (zh) * 2022-06-09 2024-03-12 纳芯微电子(河南)有限公司 一种用于玻璃晶圆的化学机械抛光液及其制备方法和应用

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009218558A (ja) * 2008-02-12 2009-09-24 Hitachi Chem Co Ltd Ｃｍｐ用研磨液、基板の研磨方法及び電子部品
WO2013191139A1 (fr) * 2012-06-19 2013-12-27 株式会社 フジミインコーポレーテッド Composition de polissage et procédé de fabrication de substrat utilisant ladite composition
US9281210B2 (en) 2013-10-10 2016-03-08 Cabot Microelectronics Corporation Wet-process ceria compositions for polishing substrates, and methods related thereto
US9279067B2 (en) 2013-10-10 2016-03-08 Cabot Microelectronics Corporation Wet-process ceria compositions for polishing substrates, and methods related thereto
JP2017071753A (ja) * 2015-06-05 2017-04-13 エア プロダクツ アンド ケミカルズ インコーポレイテッドＡｉｒ Ｐｒｏｄｕｃｔｓ Ａｎｄ Ｃｈｅｍｉｃａｌｓ Ｉｎｃｏｒｐｏｒａｔｅｄ セリア被覆シリカ研磨剤を使用したバリア化学機械平坦化スラリー

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