WO2007119839A1 - Appareil optique d'éclairage, appareil d'exposition à projection, et procédé de fabrication des dispositifs - Google Patents

Appareil optique d'éclairage, appareil d'exposition à projection, et procédé de fabrication des dispositifs Download PDF

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Publication number
WO2007119839A1
WO2007119839A1 PCT/JP2007/058223 JP2007058223W WO2007119839A1 WO 2007119839 A1 WO2007119839 A1 WO 2007119839A1 JP 2007058223 W JP2007058223 W JP 2007058223W WO 2007119839 A1 WO2007119839 A1 WO 2007119839A1
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WO
WIPO (PCT)
Prior art keywords
illumination
pattern
regions
plane
optical system
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Application number
PCT/JP2007/058223
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English (en)
Inventor
Michio Noboru
Naomasa Shiraishi
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Nikon Corporation
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Publication date
Application filed by Nikon Corporation filed Critical Nikon Corporation
Priority to EP07741659A priority Critical patent/EP2005253A1/fr
Publication of WO2007119839A1 publication Critical patent/WO2007119839A1/fr

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70208—Multiple illumination paths, e.g. radiation distribution devices, microlens illumination systems, multiplexers or demultiplexers for single or multiple projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature

Definitions

  • the present invention relates to illumination and exposure techniques employed for projecting a pattern of a first plane onto a second plane, and is suitable when used for transferring a mask pattern onto a photosensitive substrate in a lithography step for manufacturing various devices such as semiconductor devices, liquid crystal display devices, and thin-film magnetic heads, for example.
  • a double exposure method is one of exposure methods for transferring a pattern of a reticle as a mask onto a wafer (or glass plate or the like) coated with a photoresist, which is used when manufacturing a semiconductor device or the like.
  • a pattern in which periodic and isolated patterns are mixed is exposed to one layer on a wafer, for example, this technique divides the reticle pattern into a first pattern corresponding to the periodic pattern and a second pattern corresponding to the isolated pattern, and subjects these two patterns to double exposure while successively optimizing their exposure conditions, thereby yielding a high imaging performance.
  • Such a double exposure method has conventionally carried out exposure by performing the first exposure by using a first reticle formed with one or a plurality of first patterns and then performing the second exposure by replacing the reticle with a second reticle formed with one or a plurality of second patterns.
  • a high throughput cannot be obtained when carrying out the exposure by exchanging the reticles as such.
  • Patent Document 1 Japanese Patent Application Laid-Open No. HEI 11-111601
  • the double exposure method combined with the conventional scanning exposure as mentioned above can optimize the respective illumination conditions (illumination schemes, polarized illuminations, etc.) of the patterns when only the first or second pattern is within the field of a projection optical system.
  • the two patterns are at least partly within the field at the same time while being at least partly located within a predetermined illumination region at the same time, however, it is hard to set illumination conditions individually for both patterns. Therefore, it has been difficult to optimize the respective illumination conditions for entire regions corresponding to both of the first and second patterns.
  • the illumination conditions for the two patterns greatly differ from each other, it takes a certain extent of time for an illumination optical system to switch between the illumination conditions, which makes it difficult to raise the reticle scanning speed, whereby the throughput is hard to increase further.
  • the first illumination optical apparatus in accordance with the present invention is an illumination optical apparatus, used in a projection exposure apparatus for projecting and exposing a pattern arranged in a first plane to a second plane, for supplying the first plane with illumination light from a light source (10), the illumination optical apparatus comprising a relay optical system (22), arranged between the light source and the first plane, for forming a third plane (62) optically conjugate with the first plane between the light source and the first plane; and an optical path combiner (21), arranged in an optical path between the light source and the first plane, for combining a first light beam (ILl) from the light source and a second light beam (IL2) different from the first light beam such that the first and second light beams illuminate the first plane closely to each other; wherein the optical path combiner includes a first region (21a) corresponding to the first light beam and a second region (21b), separated from the first region, corresponding to the second light beam; and wherein a boundary
  • (21c) between the first and second regions is arranged on or near the third plane.
  • the present invention can illuminate entire surface of each pattern under their optimal illumination conditions.
  • the second illumination optical apparatus in accordance with the present invention is an illumination optical apparatus, used in a projection exposure apparatus for projecting and exposing a pattern arranged in a first plane to a second plane, for supplying the first plane with illumination light from a light source (10), the illumination optical apparatus comprising an optical path combiner (21), arranged in an optical path between the light source and the first plane, for combining a plurality of light beams (ILl 3 IL2) different from each other from the light source such that the first and second light beams illuminate the first plane closely to each other; wherein the optical path combiner includes a discrete point (21c) positioned on or near a third plane (62) optically conjugate with the first plane; and wherein the plurality of light beams travel by way of a plurality of regions (2Ia 5 21b) sectioned by the discrete point, respectively.
  • the projection exposure apparatus in accordance with the present invention is a projection exposure apparatus for illuminating a pattern with illumination light and exposing a photosensitive substrate (W) through the pattern and a projection optical system (PL), the projection exposure apparatus comprising any of the illumination optical apparatus (IU) of the present invention for illuminating the pattern.
  • the device manufacturing method in accordance with the present invention uses the projection exposure apparatus of the present invention.
  • a pattern to be exposed has first and second pattern regions (RA, RB) arranged along a scanning direction, and patterns in the first and second pattern regions are respectively transferred to first and second sectioned regions (48A, 48F) adjacent to each other on a substrate by one scanning exposure while being respectively illuminated with the first and second light beams.
  • the projection optical system in accordance with the present invention is a projection optical system (PLl) used for exposing the substrate by the first and second light beams respectively passed through the first and second pattern regions, the projection optical system
  • patterns within two pattern regions are respectively transferred to two sectioned regions on a photosensitive substrate by one scanning exposure in the projection exposure apparatus, whereby double exposure can be carried out with a high throughput by moving the substrate stepwise by one sectioned region in the next exposure. Since there is an image shifter here, the two pattern regions can be arranged so as to be separated from each other in the scanning direction, whereby in the next exposure of each of the two pattern regions can easily be illuminated under its optimal illumination conditions.
  • Fig. 1 is a view showing the structure of the projection exposure apparatus in accordance with the first embodiment of the present invention.
  • Fig. 2 is a view schematically showing the illumination optical system IU in the projection exposure apparatus of Fig. 1.
  • Fig. 3 is a view showing the relationship between the field of the projection optical system PL in the projection exposure apparatus of Fig. 1 and illumination fields.
  • Fig. 4 is a view showing an example of changes in the positional relationship between the pattern regions RA, RB of the reticle R and the illumination regions 25A 5 25B in Fig. 2.
  • Fig. 5 is a view showing an example of changes in the apertures of the movable blinds 18A, 18B corresponding to the changes in the state on the first line of Fig. 4.
  • Fig. 6 is a view showing an example of changes in the apertures of the movable blinds 18 A, 18B corresponding to the changes in the state on the second line of Fig. 4.
  • Fig. 7 is a view showing an example of changes in the apertures of the movable blinds 18 A, 18B corresponding to the changes in the state on the third line of Fig. 4.
  • Fig. 8 is a plan view showing an example of shot arrangements on the wafer in the first embodiment.
  • Fig. 9 is a plan view used for explaining a case where exposure is performed in the shot regions on the second and third lines on the wafer of Fig. 8.
  • Fig. 10 is a plan view used for explaining a case where exposure is performed in the shot regions on the third and fourth lines on the wafer of Fig. 8.
  • Fig. 11 is a view showing a main part of the illumination optical system in the first modified example of the first embodiment.
  • Fig. 12 is a view showing a main part of the illumination optical system in the second modified example of the first embodiment.
  • Fig. 13 is a view showing a main part of the illumination optical system in the third modified example of the first embodiment.
  • Fig. 14 is a view showing a main part of the illumination optical system in the fourth modified example of the first embodiment.
  • Fig. 15 is a view showing a main part of the illumination optical system in the fifth modified example of the first embodiment.
  • Fig. 16 is a view showing an optical member usable in place of the optical path combiner 63 in the embodiment of Fig. 15.
  • Fig. 17 is a view showing a schematic structure of the projection exposure apparatus in accordance with the second embodiment of the present invention.
  • Fig. 18 is a plan view showing the relationship between reticles, the field in the projection optical system PLl, illumination fields, the image field in the projection optical system PLl and exposure regions in
  • Fig. 17 ((a) is a plan view showing two reticles of Fig. 17; (b) is a plan view showing the relationship between the field in the projection optical system PLl of Fig. 17 and illumination fields; and (c) is a plan view showing the relationship between the image field in the projection optical system PLl of Fig. 17 and exposure regions).
  • Fig. 19 is a view showing an example of changes in the positional relationship between pattern regions of two reticles in Fig. 17 and the illumination regions 25 A, 25B.
  • Fig. 20 is a view showing an example of changes in the positional relationship between two adjacent shot regions and the exposure regions 28A, 28B corresponding to the change in the state of Fig. 19.
  • Fig. 21 is a view of the projection optical system and reticle stage in a modified example of the second embodiment as seen from the scanning direction.
  • Fig. 22 is a view of the projection optical system and reticle stage of Fig. 21 as seen from the nonscanning direction.
  • Fig. 23 is a plan view showing the relationship between reticles on the reticle stage of Fig. 21, the image field of the projection optical system of Fig. 21 and the exposure regions
  • (a) is a plan view showing two reticles on the reticle stage of Fig. 21, whereas (b) is a plan view showing the relationship between the image field of the projection optical system of Fig. 21 and the exposure regions).
  • Fig. 24 is a view showing a schematic structure of the projection exposure apparatus in the third embodiment of the present invention.
  • Fig. 25 is a view schematically showing the illumination optical system IU2 in the projection exposure apparatus of Fig. 24.
  • Fig. 26 is a view showing the relationship between the field of the projection optical system PL in Fig. 24,- the illumination fields, the image field of the projection optical system PL in Fig. 24 and the exposure regions ((a) is a view showing the relationship between the field of the projection optical system PL in Fig. 24 and the illumination fields, whereas (b) is a view showing the relationship between the image field of the projection optical system PL in Fig. 24 and the exposure regions).
  • Fig. 27 is a view showing an example of changes in the positional relationship between the pattern regions RA, RB of the reticle R in Fig. 24 and the illumination regions 76A, 76B.
  • Fig. 28 is a view showing an example of changes in the apertures of the movable blinds 18Al, 18Bl corresponding to the changes in the state on the first line of Fig. 27.
  • Fig. 29 is a view showing an example of changes in the apertures of the movable blinds 18Al, 18Bl corresponding to the changes in the state on the second line of Fig. 27.
  • Fig. 30 is a view showing an example of changes in the apertures of the movable blinds 18Al, 18Bl corresponding to the changes in the state on the third line of Fig. 27.
  • FIG. 1 a first embodiment of the present invention will be explained with reference to Figs. 1 to 10.
  • This example employs the present invention in a case carrying out exposure by using a projection exposure apparatus of scanning stepper type, which performs in a scanning exposure scheme.
  • the projection exposure apparatus comprises an exposure light source 10, an illumination optical system IU for illuminating a reticle R as a mask with exposure light from the exposure light source 10, a reticle stage RST for moving the reticle R while holding the same, a projection optical system PL for projecting an image of a pattern within an illumination region of the reticle R onto a wafer W coated with a photoresist (photosensitive material) as a photosensitive substrate, a wafer stage WST for moving the wafer W while holding the same, driving mechanisms for these stages and the like, and a main control system 36 for totally regulating operations of the driving mechanisms and the like.
  • the projection exposure apparatus comprises an exposure light source 10, an illumination optical system IU for illuminating a reticle R as a mask with exposure light from the exposure light source 10, a reticle stage RST for moving the reticle R while holding the same, a projection optical system PL for projecting an image of a pattern within an illumination region of the reticle R onto a wafer W coated
  • ArF excimer laser (having a wavelength of 193 nm) is used as the exposure light source 1O 5 harmonic generators such as KrF excimer laser (having a wavelength of 248 nm), F 2 laser (having a wavelength of 157 nm), and solid-state laser (YAG laser, semiconductor laser, or the like), mercury lamps, and the like can also be used as the exposure light source.
  • Z axis is set parallel to the optical axis AX9 of the projection optical system PL
  • Y axis is set along a scanning direction (direction parallel to the page of Fig.
  • Exposure light (exposure illumination light) IL constituted by linearly polarized UV (ultraviolet) pulsed laser light emitted from the exposure light source 10 is made incident on an optical divider 11 through a beam matching unit BMU along an optical axis AXl, so as to be divided into a first exposure light beam ILl and a second exposure light beam IL2.
  • the first exposure light beam ILl is reflected by a mirror 12, so as to enter a first illumination unit IUA having an optical axis AX2, whereas the second exposure light beam IL2 enters a second illumination unit IUB having an optical axis AX4.
  • a polarizing beam splitter PBS
  • the optical divider 11 while the polarizing direction of the exposure light IL incident on the optical divider 11 is set such that the light quantity of the first exposure light beam ILl (p-polarized light component) transmitted through the optical divider 11 and the light quantity of the second exposure light beam IL2 (s-polarized light component) reflected by the optical divider 11 are equal to each other.
  • Rotatably providing a half-wave plate, which is not depicted, on the exposure light source 10 side of the optical divider 11, for example, can vary the polarizing direction of the exposure light IL incident on the optical divider 11, whereby the ratio between the light quantity of the first exposure light beam ILl and the light quantity of the second exposure light beam IL2 (S-polarized light component) can be made variable.
  • a half mirror can also be used as the optical divider 11.
  • the optical divider 11 can also be construed as a multiple-light- beam generator which divides a light beam from a light source into a plurality of light beams, for example.
  • the first exposure light beam ILl entering the first illumination unit IUA passes a light-attenuating unit LAA for regulating the light quantity (illuminance) in a plurality of stages, a polarization controller 13A for regulating the polarization state of the exposure light, a replaceable diffractive optical element (DOE) 14A for setting a light quantity distribution of exposure light on a pupil plane of the illumination optical system IU, and a shaping optical system 15A for regulating the cross-sectional form of exposure light, so as to be made incident on an optical integrator 16A.
  • a light-attenuating unit LAA for regulating the light quantity (illuminance) in a plurality of stages
  • a polarization controller 13A for regulating the polarization state of the exposure light
  • DOE replaceable diffractive optical element
  • shaping optical system 15A for regulating the cross-sectional form of exposure light, so as to be made incident on an optical integrator 16A.
  • the polarizing controller 13 A includes a quarter-wave plate and/or a half-wave plate, for example, and sets the polarization state of exited exposure light beam ILl to linear polarization in a predetermined direction, circular polarization, or the like. This makes it possible to illuminate patterns of the reticle R with the first exposure light beam ILl in desirable polarized illumination.
  • Each of the illuminance of exposure light regulated by the light- attenuating unit LAA and the polarized illumination set by the polarization controller 13A is one of illumination conditions for the exposure light.
  • the diffractive optical element 14 can cause diffracted light by the incident first exposure light beam ILl such that the light quantity of the diffracted light is distributed in an annular state in a far field, for example, thereby effecting annular illumination.
  • diffractive optical elements 14Al for effecting normal illumination, small ⁇ illumination with a small coherence factor ( ⁇ value), and so- called deformed illumination such as dipole and quadrupolar illuminations in which the light quantity becomes greater at two and four positions arranged so as to hold the optical axis between those positions on the pupil plane of the illumination optical system IU, respectively, are arranged so as to be replaceable with the diffractive optical element 14 A.
  • the main control system 36 selects any of these diffractive optical elements and places it on an optical path of the first exposure light beam ILl 3 thereby being able to set its corresponding illumination scheme (annular illumination, dipole illumination, or the like). Not only the light quantity distribution of exposure light on the pupil plane of the illumination optical system IU in this illumination scheme but also the incident angle distribution of exposure light on the reticle R is one of illumination conditions.
  • the shaping optical system 15A comprises an afocal system, a pair of prisms (e.g., those of a conical axicon system) which are arranged within the afocal system while at least one of them is movable, a zoom lens system arranged behind the afocal system, a replaceable polarization converter for setting the distribution of polarization state in a cross section of exposure light to a predetermined distribution
  • polarization characteristic distribution mainly composed of linearly polarized light in a circumferential direction (an azymuthal direction) on the pupil plane of the illumination optical system or the like polarization characteristic distribution mainly composed of linearly polarized light in a circumferential direction (an azymuthal direction) on the pupil plane of the illumination optical system or the like.
  • polarization controller 13 A, diffractive optical element 14A, and shaping optical system 15A are disclosed in International Publication No. 2004/051717 Pamphlet, International Publication No. 2005/076045 Pamphlet, International Publication No. 2005/050718 Pamphlet, and the like, for example.
  • a fly's-eye lens (or micro-fly's-eye lens) is used as the optical integrator 16A in this example, an internal-reflection-type integrator (rod integrator or the like), a diffractive optical element, or the like may be used in place thereof.
  • a portion of the first exposure light beam ILl having passed through the optical integrator 16A is caused to branch off by a beam splitter BSA, so as to be made incident on an integrator sensor ISA constituted by a photodetector, whereby its light quantity is measured, and the integrated amount of exposure light quantities at each point on the wafer W is indirectly monitored from the results of measurement.
  • the first exposure light beam ILl transmitted through the beam splitter passes a condenser optical system 17A, thereby successively reaching a fixed blind (fixed field (illumination field) stop) 3 IA and a movable blind (movable field (illumination field) stop) 18 A.
  • the fixed blind 3 IA is placed on a surface slightly defocused from a plane optically conjugate with a pattern surface of the reticle R (hereinafter referred to as reticle surface), while the movable blind 18A is placed on the plane optically conjugate with the reticle surface.
  • the fixed blind 31A is a field (illumination field) stop for defining an illumination region formed like a slit elongated in the nonscanning direction on the reticle R, whereas the movable blind 18A is driven by a driving mechanism 32A so as to control the illumination region . such that regions other than desirable pattern regions on the reticle R are not irradiated with the first exposure light beam ILl at the time of scanning exposure.
  • the operation of the driving mechanism 32A is regulated by a stage driving system 35 which will be explained later.
  • the movable blind 18A is also used for regulating the width of the illumination region in the nonscanning direction.
  • the above-mentioned polarization controller 13A 5 difrractive optical element 14A or the like, shaping optical system 15A 5 optical integrator 16A 5 and condenser optical system 17A construct the first illumination unit IUA, whereas the first exposure light beam having traveled the first illumination unit IUA reaches the fixed blind 3 IA and movable blind 18A.
  • the first exposure light beam ILl transmitted through the movable blind 18A passes a first primary relay optical system 19A and an optical path folding mirror 2OA, so as to be folded at substantially right angles, thereby advancing along an optical axis AX3, and thereafter is reflected by a reflecting surface 21a of an optical path combining mirror 21, so as to enter a secondary relay optical system 22 along an optical axis AX6.
  • the optical path folding mirror 2OA and optical path combining mirror 21 are arranged between the primary relay optical system 19A and the position where an image of the aperture of the movable blind 18A is formed.
  • the secondary relay optical system 22 is an optical system which makes a predetermined plane 62 and a reticle surface optically conjugate with each other.
  • the optical path combining mirror 21 is a reflecting member shaped like a rectangular prism comprising reflecting surfaces 21a and 21b orthogonal to each other, whereas a ridge line (line formed by an intersection of planes where reflecting surfaces are positioned) 21c formed by the reflecting surfaces 21a, 21b is substantially positioned on the reticle conjugate plane 62.
  • the tolerance for the deviation of the ridge line 21c from the reticle conjugate plane 62 will be explained later.
  • the ridge line 21c can also be construed as a discrete point.
  • the secondary illumination unit IUB comprises a light-attenuating unit LAB, a polarization controller 13B, diffractive optical elements 14B 5 14Bl or the like, a shaping optical system 15B, an optical integrator 16B, a beam splitter BSB, an integrator sensor ISB, and a condenser optical system 17B, all of which have the same structures as those of their corresponding optical members in the first illumination unit IUA.
  • the second exposure light beam IL2 entering the second illumination unit IUB is incident on a fixed blind 3 IB and a movable blind 18B (driven by a driving mechanism 32B under the control of the stage driving system 35) as with the first exposure light beam ILl.
  • the second exposure light beam IL2 having transmitted through the movable blind 18B passes a second primary relay optical system 19B and an optical path folding mirror 2OB, so as to advance along an optical axis AX5, and then is reflected by the reflecting surface 21b of the optical path combining mirror 21, thereby being made incident on the secondary relay optical system 22.
  • the second primary relay optical system 19B forms an image of the aperture of the movable blind L8B on the reticle conjugate plane 62 in this case as well.
  • the optical path combining mirror 21 can be construed as an optical path combiner which is arranged between the exposure light source 10 and the reticle surface, i.e., on or near the reticle conjugate plane 62 in this example, and assembles the respective light beams from the first and second illumination units IUA and IUB.
  • the reflecting surfaces 21a and 21b of the optical path combining mirror 21 can be construed as the first and second regions of the optical path combiner, respectively.
  • the reticle conjugate plane 62 can be construed as the third plane conjugate with the first surface where the pattern surface of the reticle R is positioned. [0025] The structure mentioned above allows images of the plurality of movable blinds 18A and 18B to be positioned adjacent to each other on the reticle conjugate plane 62 even when a plurality of movable blinds 18A and 18B are arranged while being spatially separated from each other.
  • the exposure light beams ILl and IL2 assembled by the optical path combining mirror 21 pass the second relay optical system 22 including a lens system 22a 5 an optical path folding mirror 22b, a lens system 22c, a lens system 22d, an optical path folding mirror 22e, and a lens system 22f, so as to illuminate patterns provided on the pattern surface (reticle surface) of the reticle R along optical axes AX6, AX7, AX8.
  • the optical axis AX8 of the illumination optical system IU on the reticle R coincides with the optical axis AX9 of the projection optical system PL.
  • the illumination optical system IU includes the above-mentioned illumination units IUA and IUB, fixed blinds 3 IA and
  • FIG. 2 is a view schematically showing the illumination optical system IU of Fig. 1 without depicting a plurality of optical path folding mirrors in the illumination optical system IU of Fig. 1.
  • illumination regions 23 A, 23B (apertures of the movable blinds 18A and 18B) formed by the exposure light beams exited from the condenser optical systems 17 A, 17B of the illumination units IUA, IUB are located at positions decentered from the primary relay optical systems 19 A, 19B acting as subsequent optical systems.
  • the technique disclosed in Japanese Patent Application Laid-Open No. 2000-21765 can be employed.
  • illumination regions 23A and 23B are reimaged as illumination regions 24A and 24B adjacent to each other on the reticle conjugate plane 62 by way of their corresponding primary relay optical systems 19A, 19B 5 optical path folding mirrors 2OA, 2OB, and reflecting surfaces 21a, 21b of the optical path combining mirror 21.
  • the secondary relay optical system 22 reimages the illumination regions 24 A and 24B adjacent to each other as a first illumination region 25 A and a second illumination region 25B which are adjacent to each other on the reticle R, respectively.
  • the widths of the apertures of the movable blinds 18A and 18B in the scanning direction (Y direction) of the reticle R are defined by their corresponding movable blinds 18Al, 18A2 and blinds 18Bl, 18B2.
  • Fig. 3 shows the relationship between the field PLF of the projection optical system PL in this example and a first and second illumination fields 18AP, 18BP which are images of fully opened apertures of the first and second movable blinds 18A and 18B, respectively.
  • the first illumination field 18AP and second illumination field 18BP are rectangular regions having the same size elongated in the X direction (nonscanning direction).
  • the first illumination field 18AP and second illumination field 18BP are adjacent to each other across a boundary line 18C which passes the optical axis AX8 (optical axis AX9 of the projection optical system PL) on the exit side of the secondary relay optical system 22 and is parallel to the X axis, and are substantially inscribed as a whole in the contour of the field PLF of the projection optical system PL.
  • the boundary line 18C is also an image of the ridge line 21c of the optical path combining mirror 21 of Fig. 2 formed by the secondary relay optical system 22.
  • the illumination fields 18AP and 18BP equal to the illumination regions 25 A and 25B at maximum, respectively.
  • the movable blinds 18A and 18B are opened and closed in the direction corresponding to the scanning direction during scanning exposure as will be explained later, so that the widths of the illumination regions 25A and 25B in the scanning direction are regulated according to the position of the reticle R in the scanning direction within the illumination fields 18AP and 18BP, respectively.
  • the pattern within an illumination region of the reticle R is projected onto an exposure region on the wafer W coated with a photoresist at a predetermined projection magnification ⁇ (where ⁇ is 1/4, 1/5, or the like) through the projection optical system PL.
  • the projection optical system PL projects (projects and exposes) the pattern on the reticle surface acting as an object surface onto the surface of the wafer W acting as an image surface.
  • the wafer W is a disk-shaped substrate having a diameter of 200 mm, 300 mm, or the like, for example.
  • Employable as the projection optical system PL is not only a dioptric system, but also a catadioptric projection optical system which has an optical system having an optical axis directed from the reticle to the wafer and a catadioptric system having an optical axis substantially orthogonal to the former optical axis and forms intermediate images twice therewithal, or the like as disclosed in International Publication No. 2004/19128 Pamphlet.
  • the reticle R is held on the reticle stage RST by suction, whereas the reticle stage RST is mounted on a reticle base RSB so as to be continuously movable in the Y direction by a linear motor or the like. Further, a mechanism for finely moving the' reticle in rotary directions about the X direction, Y direction, and Z axis is built in the reticle stage
  • the position of the reticle stage RST (reticle R) is measured with a high accuracy by a movable mirror 33R on the reticle stage RST and a laser interferometer 34R arranged so as to oppose the mirror 33R, and the stage driving system 35 regulates operations of the reticle stage RST according to the results of measurement and the control information from the main control system 36. Also, according to the positional information of the reticle stage RST (and reticle R) in the Y direction (scanning direction), the stage driving system 35 regulates operations of opening and closing the movable blinds 18A and 18B 5 i.e., the widths of the illumination regions 25 A and 25B in the Y direction in
  • the wafer stage WST is constituted by a Z tilt stage for regulating the focus position (position in the Z direction) and angle of inclination of the wafer W, and an XY stage which is movable continuously in the Y direction and stepwise in the X and Y directions on a wafer base WB by a linear motor or the like.
  • the position of the wafer holder WH (wafer W) is measured with a high accuracy by a movable mirror 33 W on the wafer stage WST and a laser interferometer 34 W arranged so as to oppose the mirror 33 W, and the stage driving system 35 regulates operations of the wafer stage WST according to the results of measurement and the control information from the main control system 36.
  • the image surface on which the reticle pattern image formed by the projection optical system PL is located can be construed as the second plane, whereas the surface of the wafer W is positioned at the second plane.
  • the wafer W is moved at a velocity ⁇ -VR (where ⁇ is the projection magnification from the reticle R to the wafer W) in the Y direction by means of the wafer stage WST with respect to the exposure region, whereby pattern images within two pattern regions in series (which will be explained later in detail) of the reticle R are sequentially transferred to two shot regions adjacent to each other in the scanning direction on the wafer W.
  • the respective scanning directions of the reticle R and wafer W are opposite to each other in the projection optical system PL of this example forming an inverted image.
  • the projection optical system PL projects an erected image in the scanning direction
  • the reticle R and wafer W are scanned in the same direction.
  • the wafer stage WST is moved stepwise, so as to shift the next shot region on the wafer to a scanning start position, and scanning exposure is carried out. This operation is repeated in a step-and-scan scheme, so that the exposure is performed for each pair of shot regions adjacent to each other in the scanning direction on the wafer W.
  • an alignment sensor 37W for detecting the position of an alignment mark provided in each shot region on the wafer W is placed at a side face of the projection optical system PL.
  • a pair of alignment microscopes of image processing type are placed in order to measure positions of alignment marks on the reticle R.
  • Fig. 4(a) is a plan view showing a pattern arrangement of the reticle R used in this example.
  • the region surrounded by a rectangular frame-like light-shielding band 51 in the reticle R is divided by a boundary light-shielding band 53 into two in the Y direction, i.e., first and second pattern regions RA, RB having the same size.
  • Different transfer patterns (hereinafter respectively referred to as patterns A and B) are drawn within the pattern regions RA 3 RB 5 respectively.
  • the patterns A and B are patterns generated from a circuit pattern transferred to one layer of each shot region on the wafer W.
  • a projection image corresponding to the circuit pattern is exposed to each shot region by overlaying images of the patterns A and B on each other.
  • the pattern A is constituted by a line-and- space pattern (hereinafter referred to as L&S pattern) 55Y arranged with a pitch on the order of resolution limit in the Y direction
  • the pattern B is constituted by an X-direction L&S pattern 55X arranged with a pitch on the order of resolution limit in the X direction.
  • an X-axis dipole illumination diflractive optical element (having two secondary light sources separated from each other in the direction corresponding to the X direction) for the X- direction L&S pattern 55X is employed as the first illumination unit IUA in Fig. 1, and a Y-axis dipole illumination diffractive optical element (having two secondary light sources separated from each other in the direction corresponding to the Y direction) for the Y-direction L&S pattern 55 Y is employed as the second illumination unit IUB in order to enhance the resolving power.
  • the illumination regions 25A and 25B are illuminated with dipole illuminations orthogonal to each other.
  • the illumination scheme for the first illumination region 25A may be annular illumination while the illumination scheme for the second illumination region 25B may be small ⁇ illumination or the like.
  • the size of each of the pattern regions RA and RB in the reticle R of Fig. 4(a) corresponds to the size of one shot region on the wafer W, while the light-shielding band 53 at the boundary between the pattern regions RA and RB has a width corresponding to the width of a street line between adjacent shot regions on the wafer W. Namely, images into which the two pattern regions RA and RB are reduced at the projection magnification of the projection optical system PL correspond to the sizes of the two shot regions adjacent to each other in the scanning direction on the wafer W.
  • the street line refers to a nondevice region arranged in each boundary portion of a plurality of semiconductor devices formed on a wafer, whereas its width is mainly about 100 ⁇ m at present.
  • the width of the street line on the wafer W is 100 ⁇ m while the magnification of the projection optical system PL is 1/4, the width of the light-shielding band 53 is 400 ⁇ m. This makes it necessary for the boundary portion of the first illumination region 25A and second illumination region 25B to accurately coincide with the pattern regions
  • RA and RB with a positional tolerance of 400 ⁇ m or less.
  • the amount of deviation of the ridge line 21c in the optical path combining mirror 21 from the reticle conjugate plane 62 is such that the blurred width of the boundary between the first illumination region 25 A and second illumination region 25B is . 400 ⁇ m or less as mentioned above, for example.
  • a pair of alignment marks 54A and 54B are formed so as to hold the pattern region of the reticle R between the marks 54A, 54B in the X direction. Measuring the positions of the alignment marks 54A and 54B with an alignment microscope 37R allows the reticle R to be aligned.
  • Fig. 8 shows a shot arrangement on the wafer W in this example.
  • a number of shot regions (representatively illustrated by shot regions 48) are formed on the wafer W with a predetermined pitch in X and Y directions.
  • Each of these shot regions 48 is a rectangular region having a width F in the Y direction (scanning direction) and a width E in the X direction while including an region extending to the centers of the street lines in the boundary portions with respect to its adjacent shot regions in X and Y directions.
  • the respective images of patterns A and B of the first and second pattern regions RA and RB in Fig. 4(a) are double-exposed to each of the shot regions 48.
  • the shot region 48 is provided with two alignment marks 46 A, 46B, for example.
  • the shot regions on the wafer W can be aligned by an enhanced global alignment scheme, for example.
  • FIG. 4(a) to (1) are views showing respective positional relationships between a plurality of pattern regions RA 5 RB and two illumination regions 25A 5 25B at the time of scanning exposure. Though the reticle R is scanned in ⁇ Y directions with respect to the illumination regions 25A 5 25B in practice,
  • Figs. 4(a) to (1) are illustrated such that the illumination regions 25A 5 25B relatively move in the Y direction on the reticle R for convenience of explanation.
  • Figs. 5(a) to (d) show respective states of the aperture of the movable blind 18A (regulated by the blinds 18Al, 18A2) and the aperture of the movable blind 18B (regulated by the blinds 18Bl 5 18B2) in the cases of Figs. 4(a) to (d).
  • Figs. 6(e) to (h) show respective states of the apertures of the movable blinds 18A and 18B in the cases of Figs. 4(e) to (h).
  • Figs. 7(i) to (1) show respective states of the apertures of the movable blinds 18A and 18B in the cases of Figs. 4(i) to (1).
  • [0042] [First Step]
  • an image Bl of the pattern B in the pattern region RB and an image Al of the pattern A in the pattern region RA in Fig. 4(a) are exposed to two shot regions 48A and 48F adjacent to each other in the Y direction on the wafer W of Fig. 8 by one scan, respectively. .
  • the patterns A and B on the reticle R in Fig. 4(a) are thus in reverse order from the images Al and Bl of patterns A and B on the wafer W in Fig. 8 in the Y direction, since the projection optical system PL of this example forms an inverted image.
  • both of the illumination regions 25 A, 25B are closed as in Fig. 4(a)
  • both of the movable blinds 18A, 18B are closed as shown in Fig. 5(a).
  • the apertures of the movable blinds 18A and 18B are regulated to open and close according to the position of the reticle R in the Y direction in Fig. 2 such that the illumination regions 25A and 25B illuminate only the patterns within the pattern regions RB and RA (see Fig. 4(a)) surrounded by the light-shielding bands 51 and 53 of the reticle R within the illumination fields 18AP and 18BP, respectively.
  • the second illumination region 25B initially starts to open as shown in Fig. 4(b) (the movable blind 18B begins to open in Fig. 5(b) corresponding thereto).
  • the second illumination region 25B fully opens in the state corresponding to Fig. 4(c) (the movable blind 18B fully opens as in Fig. 5(c) corresponding thereto).
  • the reticle R is scanned with respect to the second illumination region 25B as in Figs. 4(d) and
  • the first illumination region 25 A starts to open (the movable blind 18A begins to open in Fig. 6(f) corresponding thereto) at the time when the pattern region RB enters the illumination field 18AP in Fig. 3.
  • the first illumination region 25 A fully opens in Fig. 4(g) (the movable blind 18A fully opens as in Fig. 6(g) corresponding thereto).
  • both of the illumination regions 25A and 25B are fully open, the light-shielding band 53 is located at their boundary portion, and the images Al and Bl of patterns in the pattern regions RA and RB in the reticle R are partly exposed the adjacent shot regions 48F and 48A in parallel on the wafer
  • the second illumination region 25B is gradually closed so as to follow the light-shielding band 53 as shown in Fig. 4(h) (the movable blind 18B gradually closes as shown in Fig. 6(h) corresponding thereto).
  • the second illumination region 25B is completely closed, whereby only the second pattern region RB of the reticle R is illuminated with the first illumination region 25A (the movable blind 18B is completely closed as shown in Fig. 7(i) corresponding thereto).
  • the exposure to the shot region 48F on the wafer W in Fig. 8 ends, whereas the exposure to only the adjacent shot region 48 A continues.
  • the second pattern region RB of the reticle R is located within the illumination field 18AP in Fig. 3 while the first pattern region RA is outside of the illumination field 18BP in this state, only the second pattern region RB of the reticle R is illuminated with the fully open first illumination region 25A as shown in Figs. 4(j) and 4(k) (only the movable blind 18A is fully open as shown in Figs. 7(j) and 7(k) corresponding thereto), whereas the image Bl of the pattern in the second pattern region RB is sequentially exposed to the shot region 48A of the wafer W in Fig. 8. Thereafter, when the light-shielding band 51 of the reticle R reaches the first illumination region 25 A as shown in Fig.
  • the width of the first illumination region 25A gradually becomes O (the movable blind 18A gradually closes as shown in Fig. 7(1) corresponding thereto), whereby the exposure of the image Bl corresponding to the shot region 48A of Fig. 8 ends.
  • the reticle R is moved to a scanning start position in the +Y direction with respect to the illumination fields 18AP, 18BP in Fig. 3.
  • the wafer W is moved stepwise in the X direction by the width E of one shot region 48 in the X direction in Fig. 8.
  • the illumination regions 25A, 25B are driven successively from Fig. 4(1) to Fig.
  • Fig. 9 (in the opposite scanning direction), whereby images B2 and A2 of patterns in the pattern regions RB and RA of the reticle R in Fig. 4(a) are exposed to the shot regions 48J and 48O, respectively, by one scanning exposure.
  • the image B2 of the pattern in the second pattern region RB and the image Al of the pattern in the first pattern region RA in the reticle R are double-exposed onto the shot region 48J.
  • the reticle R is alternately scanned in the +Y and -Y directions, the wafer W is driven in synchronization therewith so that the exposure region relatively moves along a locus 47B in Fig. 9, and the illumination regions 25A, 25B are regulated to be opened and closed as shown in Figs. 4(a) to (1), whereby the image B2 is exposed to a series of shot regions 48J to 48F in the X direction, whereas the image A2 is exposed to a series of shot regions 480 to 48K on the third line in the X direction on the wafer W in Fig. 9.
  • the images Al and B2 are double-exposed to each of a series of shot regions 48F to 48J on the second line in the X direction.
  • the wafer W in Fig. 9 is moved stepwise in the -Y direction by the width F of one shot region 48 (see Fig. 8) in the Y direction.
  • the reticle R is alternately scanned in the +Y and -Y directions, the wafer W is driven in synchronization therewith so that the exposure region relatively moves along a locus 47C in Fig. 10, and the illumination regions 25A, 25B are regulated to be opened and closed as shown in Figs. 4(a) to (1), whereby an image B3 of the pattern in the second pattern region RB in the reticle R is exposed to a series of shot regions 48K to 480 in the X direction on the wafer W in Fig.
  • the double exposure can be performed at a very high throughput.
  • an image of the pattern in the pattern region RA or RB in the reticle R is required to be separately exposed alone to the shot regions at end portions in the Y direction on the wafer W for realizing double- exposure there, the number of shot regions on the wafer W in practice is much greater than those arranged in Fig. 8, whereby the throughput hardly decreases.
  • this example thus can position the illumination regions 25A 5 25B adjacent to each other in the scanning direction while independently regulating the movable blinds 18A, 18B in synchronization with the position of the reticle R in the scanning direction.
  • This allows exposure light under different illumination conditions (illumination scheme, polarized illumination, illuminance, etc.) to be supplied to entire regions of a plurality of pattern regions RA, RB along the scanning direction on the reticle R.
  • the illumination optical system IU of Fig. 1 comprises the secondary relay optical system 22, arranged between the exposure light source 10 and the reticle surface (the pattern surface of the reticle R), for forming the reticle conjugate plane 62 optically conjugate with the reticle surface between the exposure light source 10 and the reticle surface; and the optical path combining mirror 21, arranged between the exposure light source 10 and the reticle surface, for combining the first exposure light beam ILl and second exposure light beam IL2 from the exposure light source such that they illuminate the reticle surface closely to each other; wherein the optical path combining mirror 21 includes a first reflecting surface 21a for reflecting the first exposure light beam ILl and a second reflecting surface 21, separated from the first reflecting surface 21a, for reflecting the second exposure light beam IL2, while the ridge line 21c at the boundary between the reflecting surfaces 21a and 21b is arranged on the reticle conjugate plane 62. It will be sufficient if the ridge line 21c is arranged near the reticle conjugate plane 62 as mentioned above
  • the illumination regions of exposure light beams ILl and IL2 are clearly separated from each other on the reticle surface by the image of the ridge line 21c of the optical path combining mirror 21. This makes it possible to illuminate the adjacent two pattern regions RA, RB of the reticle R on the reticle surface individually with the exposure light beams ILl and IL2. Independently optimizing illumination conditions of the exposure light beams ILl and IL2 allows entire regions of the patterns in the pattern regions RA, RB to be illuminated under their optimal illumination conditions, respectively.
  • This example employs one exposure light source 10 of Fig. 1 and comprises the optical divider 11 for dividing the exposure light IL from the exposure light source 10 into two exposure light beams ILl and IL2. Therefore, one exposure light source is sufficient for use, whereby the cost of manufacturing a projection exposure apparatus can be suppressed.
  • the exposure light beams ILl and IL2 may be introduced from different exposure light sources without using the optical divider 11 of Fig. 1. This makes it possible to perform energy control per pulse or the like, for example, for each of the exposure light beams ILl and IL2, thereby widening the range of kinds of illumination conditions which are independently controllable for individual pattern regions.
  • an optical path assembling member which reflects only one of the exposure light beams ILl and IL2 and transmits therethrough the other as it is can also be used in place of the optical path combining mirror 21.
  • IL2 is a refracting surface can also be used in place of the optical path combining mirror 21.
  • the optical systems for the exposure light beams ILl and IL2 can be arranged symmetrical in particular.
  • An optical path assembling member in which a surface transmitting at least one of the exposure light beams ILl and IL2 is a surface combining a reflecting surface and a refracting surface can also be used in place of the optical path combining mirror 21.
  • the illumination optical system IU of Fig. 1 comprises the first movable blind 18A positioned in an optical path of the first exposure light beam ILl and the second movable blind 18B positioned in an optical path of the second exposure light beam IL2, regulating the movable blinds 18A and 18B can easily set the illumination regions formed by the first exposure light beam ILl and second exposure light beam IL2 on the reticle surface independently from each other with a high precision.
  • the illumination optical system IU of Fig. 1 comprises the first primary relay optical system 19A arranged in an optical path between the first movable blind 18A and the reticle conjugate plane 62, and the second primary relay optical system 19B arranged in an optical path between the second movable blind 18B and the reticle conjugate plane 62. Therefore, images of the apertures of the movable blinds 18A and 18B (illumination regions) can easily be arranged close to each other on the reticle conjugate plane 62, whereby the patterns within the pattern regions RA and RB arranged close to each other on the reticle R can be illuminated under different illumination conditions. [0060] A9) The illumination optical system IU of Fig.
  • first and second illumination units IUA and IUB for supplying the exposure light beams ILl and IL2 to the first and second movable blinds 18A and 18B, respectively, the first illumination unit IUA and the first primary relay optical system 19A are arranged coaxially, and the second illumination unit IUB and the second primary relay optical system 19B are arranged coaxially, whereby the optical systems can be arranged easily.
  • AlO AlO
  • the first illumination unit IUA and the first primary relay optical system 19A can be arranged non-coaxially
  • the second illumination unit IUB and the second primary relay optical system 19B can be arranged non-coaxially.
  • the illumination optical system IU of Fig. 1 in this embodiment comprises the optical path combining mirror 21, arranged between the exposure light source 10 and the reticle surface, for combining a plurality of exposure light beams ILl, IL2 different from each other from the exposure light source 10 such that they illuminate the reticle surface closely to each other; wherein the optical path combining mirror 21 comprises the ridge line
  • the projection exposure apparatus of this example comprises the illumination optical system IU.
  • the illumination regions of the exposure light beams ILl 5 IL2 are clearly separated by an image of the ridge line 21c of the optical path combining mirror 21. This makes it possible to illuminate the adjacent two pattern regions RA, RB of the reticle R on the reticle surface individually with the exposure light beams ILl and
  • the ridge line 21c of the optical path combining mirror 21 is straight, the image of the ridge line 21c on the reticle surface is also straight, and a plurality of pattern regions sectioned by the straight line on the reticle surface can be illuminated under their optimal illumination conditions.
  • Fig. 11 shows a main part of the illumination optical system in accordance with a first modified example of the first embodiment.
  • FIG. 11 differs from the first embodiment in that optical axes AX2a and AX4a of illumination units IUA and IUB respectively supplying exposure light to the movable blinds 18A and 18B are positioned so as to become the respective centers of the fully opened apertures (illumination regions 23A and 23B) of their corresponding movable blinds 18A and 18B.
  • Fig. 12 shows a main part of the illumination optical system in accordance with a second modified example of the first embodiment. This modified example in Fig; 12, in which parts corresponding to those of Figs.
  • an optical path combiner 26 is provided in place of the optical path combining mirror 21 having two reflecting surfaces 21a, 21b orthogonal to each other in Fig. 1.
  • the optical path combiner 26 has a reflecting surface tilted such as to form an angle of 45° with the optical axis AX5 of the second primary relay optical system 19B, deflects the light beam from the primary relay optical system 19B by 90°, and guides thus deflected light beam to the secondary relay optical system 22.
  • the light beam exited from the first primary relay optical system 19A advances straight through an optical path outside of an effective region of the optical path combiner 26 toward the secondary relay optical system 22.
  • an edge 26a of the reflecting surface of the optical path combiner 26 is positioned at a point where the optical axis AX2 of the primary relay optical system 19A, the optical axis AX5 of the primary relay optical system 19B, and the optical axis AX6 of the secondary relay optical system 22 intersect. This intersection is positioned on a surface optically conjugate with the reticle surface (the pattern surface of the reticle R) about the secondary relay optical system 22.
  • the structure of the optical path combiner 26 is simple in this modified example. [0065] [Third Modified Example of First Embodiment]
  • Fig. 13 shows a main part of the illumination optical system in accordance with a third modified example of the first embodiment.
  • This optical path combiner 27 comprises an entrance surface 27Al on which the light beam from the primary relay optical system 19A is incident, an exit surface 27A2 from which the light beam coming by way of the entrance surface 27Al exits, and a reflecting surface 27B deflecting the light beam from the primary relay optical system 19B by 90°.
  • the entrance surface 27Al and exit surface 27A2 are provided parallel to each other, whereas the reflecting surface 27B is tilted so as to form an angle of 45° with the optical axis AX5 of the primary relay optical system 19B.
  • An edge of the reflecting surface 27B is positioned on a surface optically conjugate with the reticle surface about the secondary relay optical system 22 in the optical path combiner 27 of this modified example as well.
  • the exit surface 27A2 of the optical path combiner 27 is also positioned on a surface optically conjugate with the reticle surface about the secondary relay optical system 22.
  • Fig. 14 shows a main part of the illumination optical system in accordance with a fourth modified example of the first embodiment.
  • a partly reflecting surface 61a made of a reflecting film e.g., aluminum vapor deposition film
  • the light beam from the primary -relay optical system 19A is transmitted through a transmitting part of the optical path combiner 61, so as to be made incident on the secondary relay optical system 22, whereas the light beam from the primary relay optical system 19B is deflected by 90° at the partly reflecting surface 61a of the optical path combiner 61, so as to be made incident on the secondary relay optical system 22.
  • the structure of the optical path combiner 61 in this modified example is also simple.
  • Fig. 15 shows a main part of the illumination optical system in accordance with a fifth modified example of the first embodiment.
  • the optical axis of the first optical system constituted by the primary relay optical system 19A 5 the movable blind 18A in Fig.
  • the illumination unit IUA, and the optical axis of the second optical system constituted by the primary relay optical system 19B, the movable blind 18B in Fig. 1 in front thereof, and the illumination unit IUB are tilted symmetrically such that the respective optical axes refracted by the refracting surfaces 63 a and 63 b of the optical path combiner 63 in Fig. 15 are parallel to the optical axis of the secondary relay optical system 22.
  • the respective light beams from the primary relay optical systems 19A and 19B are incident on the refracting surfaces 63a and 63b of the optical path combiner 63 and assembled coaxially.
  • the straight boundary line 63 c making the refracting surfaces 63 a and 63b of the optical path combiner 63 discontinuous is positioned on the reticle plane 62 or a surface in the vicinity thereof.
  • This modified example makes it possible to omit the optical path folding mirrors 2OA, 2OB in the example of Fig. 1, thereby simplifying the structure of the illumination optical system.
  • a one-dimensional refracting member 54 of Fresnel zone plate type or phase grating type shown in Fig. 16 may be used in place of the optical path combiner 63 in Fig. 15.
  • a second embodiment of the present invention will now be explained with reference to Figs. 17 to 20. This example also employs the present invention when carrying out exposure by using a projection exposure apparatus of scanning stepper type.
  • parts corresponding to those in Figs. 1 to 11 are referred to with the same numerals without repeating their detailed explanations.
  • This example differs from the first embodiment in that a plurality of reticles arranged in the scanning direction are used instead of providing a plurality of pattern regions (patterns) on a single reticle.
  • the plurality of reticles are provided with a predetermined interval in the scanning direction, the interval of a plurality of shot regions on their corresponding wafer is a narrow straight street line region as in the first embodiment, whereby an image shifter is provided in the projection optical system in this example.
  • Fig. 17 shows a main part of the projection exposure apparatus in this example.
  • this projection exposure apparatus comprises an exposure light source (not depicted); an illumination optical system IUl for illuminating a plurality of (2 here) reticles RlA, RlB with illumination regions 25B and 25 A under illumination conditions independent of each other by two exposure light beams ILl, IL2 obtained by dividing exposure light emitted from the exposure light source; a reticle stage RSTl which holds the reticles
  • RlA, RlB at a predetermined interval in the Y direction (scanning direction) by suction through respective micromotion stages (not depicted) and moves in the Y direction on a reticle base (not depicted); a projection optical system PLl which projects images of patterns within the illumination regions 25B, 25A of the reticles RlA, RlB to exposure regions 28B, 28A on a wafer W under reduction; a wafer stage WST which holds the wafer W by suction through a wafer holder WH and moves in the X and Y directions; and a control system (not depicted) similar to the main control system 36 and stage driving system 35 in Fig. 1.
  • the micromotion stages on the reticle stage RSTl can independently adjust the positions of their corresponding reticles
  • Fig. 18(a) shows the reticles RlA and RlB on the reticle stage RSTl in Fig. 17, whereas patterns A and B are formed in pattern regions surrounded by light-shielding bands LSTA and LSTB of the reticles RlA and RlB, respectively.
  • the patterns A and B are constituted by the Y-direction L&S pattern 55 Y and X-direction L&S pattern 55X, respectively, by way of example as shown in Fig. 4(a). Therefore, dipole illuminations in the Y and X directions are used as illumination schemes for the patterns A and B, respectively.
  • optical axes AX2a, AX4 of illumination units IUA, IUB and the optical axes AX2b 5 AX4b of primary relay optical systems 19A 5 19B are arranged non-coaxially (although they may be arranged coaxially) as in the illumination optical system IU in the first modified example of the first embodiment in Fig.
  • the illumination optical system IUl differs therefrom in that an optical path combining mirror 29 having a trapezoidal cross section in which a boundary portion 29C of two reflecting surfaces 29A, 29B constitutes a flat portion is employed in place of the optical path combining mirror 21. Therefore, in the illumination optical system
  • IUl 5 illumination regions 24A and 24B formed on a reticle conjugate plane 62 (near which the boundary portion 29C is located) and illumination regions 25A and 25B formed on a reticle surface (the pattern surface of the reticles RlA and RlB here) from these illumination regions through a secondary relay optical system 22 are separated from each other by the interval of the pattern regions of the reticles RlA and RlB in the scanning direction (Y direction) in the full open state.
  • Fig. 18(b) shows the relationship between a field PLlF of the projection optical system PLl in this ' example and illumination fields 18AP, 18BP formed so as to be substantially inscribed therein by the exposure light beams ILl, IL2 with the above-mentioned interval in the Y direction.
  • the illumination regions 25A, 25B are opened and closed in the scanning direction within these illumination fields 18AP, 18BP. If a normal projection optical system is used in this case, the interval of the exposure regions corresponding to the illumination regions 25 A, 25B will be widened by the interval of the pattern regions of the reticles RlA, RlB under the reduction of the projection optical system.
  • the patterns of two reticles RlA, RlB cannot be transferred to two shot regions adjacent to each other in the Y direction on the wafer W through the projection optical system by one scanning exposure as they are.
  • the projection optical system PLl in this example is provided with an image shifter by which images of patterns within the illumination regions 25 A, 25B widened in the Y direction on an object surface are projected with a narrowed interval so that they are adjacent to each other in the Y direction on the image surface.
  • a first image shifter Pl 5 made of a light-transmitting member in a roof prism form having a ridge line in the X direction, functioning to narrow the gap between the light beams transmitted through the illumination regions 25A, 25B in the Y direction
  • a second image shifter P2 having a V-shaped cross-sectional form complimentary to the image shifter Pl and functioning to restore the advancing directions of the two light beams with the narrowed gap to those at the time of incidence to the image -shifter Pl are successively arranged from the reticle side in the space on the reticle side of the powered optical member group (including lenses, mirrors, and the like) PLIa in the optical members constituting the projection optical system PLl in this example.
  • the gap in the Y direction between the fully opened exposure regions 28A, 28B within an image field PLlG of the projection optical system PLl becomes a narrow gap identical to the width of the street line between shots on the wafer W, whereby the patterns of two reticles RlA, RlB in Fig. 17 can be transferred to two shot regions adjacent to each other in the Y direction on the wafer W under their optimal illumination conditions by one scanning exposure.
  • Figs. 19(a) to (1) are views showing respective positional relationships between the reticles RlA 5 RlB and the two illumination regions 25 A 5 25B in Fig. 17 at the time of scanning exposure.
  • Figs. 20(a) to (1) are views showing positional relationships between the two shot regions 48A, 48F on the wafer W and the two exposure regions 28A, 28B by the projection optical system PLl in Fig.
  • Figs. 19(i) to (1) only the pattern region of the reticle RlB is illuminated with the first illumination region 25A (only the shot region 48A is exposed to the exposure region 28A in Figs. 20(i) to (1) corresponding thereto), whereby reduced images of the patterns of the two reticles RlA, RlB are transferred to the two shot regions 48F 5 48A adjacent to each other on the wafer W. Subsequently, performing the above- mentioned exposure by moving the wafer W stepwise by one shot region in the Y direction can double-expose the patterns of the two reticles RlA, RlB to one shot region on the wafer W with a high throughput as in the first embodiment.
  • one scanning exposure can transfer a plurality of reticle patterns arranged with a predetermined interval in the Y direction to a plurality of shot regions adjacent to each other on the wafer W with a high throughput under their optimal conditions.
  • Fig. 21 is a view showing the projection optical system PL2 and reticle stage RSTl of the projection exposure apparatus in a modified example of the second embodiment as seen in the scanning direction (+Y direction).
  • Fig. 22 is a view showing the projection optical system PL2 and reticle stage RSTl of Fig. 21 as seen in a nonscanning direction (+X direction).
  • Fig. 23(a) is a view showing the positional relationship between a plurality of (2 here) reticles RlA and RlB on the reticle stage RSTl of Fig. 21 and the illumination fields 18BP and 18AP within fields of view PL2FB and PL2FA of the projection optical system PL2G by an illumination optical system which is not depicted.
  • Fig. 21 is a view showing the projection optical system PL2 and reticle stage RSTl of the projection exposure apparatus in a modified example of the second embodiment as seen in the scanning direction (+Y direction).
  • Fig. 22 is a view showing the projection optical system
  • the projection optical system PL2 in this modified example is a catadioptric projection optical system having at least one concave reflecting mirror. As shown in Fig.
  • the projection optical system PL2 comprises a plurality of (2 here) first groups GlA 5 GlB positioned on optical axes 10A 5 1OB parallel to each other; second groups G2A, G2B, positioned on optical axes AXIlA 5 AXIlB orthogonal to the optical axes AXlOA 5 AXlOB of the plurality of first groups GlA 5 GlB 5 including concave reflecting mirrors McA 5 McB 5 respectively; and a third group G3, positioned on an optical axis AX 12 orthogonal to the optical axes AXI lA 5 AXIlB of the second groups G2A, G2B, including a plurality of lens elements.
  • the projection optical system PL2 further comprises a planar mirror Ml which reflects light beams from the first group GlA toward the second group G2A and light beams from the second group G2B toward the third group G3, a planar mirror M2 which reflects light beams from the first group GlB toward the second group G2B and light beams from the second group G2A toward the third group G3, and image shifters Pl and P2 (having the same forms as with the image shifters Pl and P2 in Fig. 17) positioned in an optical path between the planar mirrors Ml 5 M2 and the third group G3.
  • the first group GlA and second group G2A form an intermediate image of the reticle RlA in an optical path near the planar mirror M2, whereas the first group GlB and second group G2B form an intermediate image of the reticle RlB in an optical path near the planar mirror Ml.
  • the plurality of intermediate images are reimaged on the wafer W held by the wafer stage WST through the third group G3.
  • each of the planar mirrors Ml 5 M2 is one in which both sides of an optical member formed like a plane parallel plate are formed with reflecting surfaces in the projection optical system PL2 in this modified example, the optical axis AX 12 of the third group G3 and the respective optical axes AXlOA and AXlOB of the first groups GlA and GlB do not become coaxial (although parallel to each other). Therefore, in this modified example, a plurality of reticles RlA, RlB on the reticle stage RSTl are positioned in the nonscanning direction (X direction) such as to be shifted from each other by the gap between the optical axes AXlOA and AXlOB as shown in Fig. 23(a). This can make the positions in the nonscanning direction of the two exposure regions 28A, 28B within the image field PL2G (on the wafer W) of the projection optical system PL2 coincide with each other as shown in Fig. 18(b).
  • Each of the optical elements constituting the first groups GlA and GlB has a half-moon (semicircular) form substantially similar to the fields of view PL2FB and PL2FA in Fig. 23 (a).
  • the projection optical system PL2 in this modified example has a first imaging optical system constituted by the first group GlA 5 second group G2A, and third group G3, and a second imaging optical system constituted by the first group GlB, second group G2B, and third group G3.
  • an imaging characteristic controlling apparatus ICA, ICB an apparatus including a mechanism for driving an optical member to be controlled in rotary directions about an optical axis direction and two axes orthogonal to each other within a plane perpendicular to the optical axis by using a piezoelectric device, for example
  • ICA, ICB an apparatus including a mechanism for driving an optical member to be controlled in rotary directions about an optical axis direction and two axes orthogonal to each other within a plane perpendicular to the optical axis by using a piezoelectric device, for example
  • the imaging state of images focused on the wafer W by light beams from the reticle RlA and the imaging state of images focused on the wafer W by light beams from the reticle RlB can be regulated independently of each other.
  • the aperture stop AS is positioned in the third group G3 in the projection optical system PL2 shown in Figs. 21 and 22, but may be provided near the concave reflecting mirrors McA, McB in the second groups G2A, G2B.
  • the coherence factor ( ⁇ value) concerning the first imaging optical system through which light beams from the reticle RlA pass and the coherence factor ( ⁇ value) concerning the second imaging optical system through which light beams from the reticle RlB pass can be regulated independently of each other.
  • FIG. 24 to 30 A third embodiment of the present invention will now be explained with reference to Figs. 24 to 30.
  • This example also employs the present invention in the case carrying out exposure by using a projection exposure apparatus of scanning stepper type.
  • parts corresponding to those in Figs. 1 to 10 will be referred with the same numerals without repeating their detailed explanations.
  • an optical path combiner unlike the first embodiment, also renders a part of functions of a movable blind.
  • Fig. 24 shows a schematic structure of the projection exposure apparatus in this example.
  • exposure light exposure illumination light
  • constituted by linearly polarized UV pulsed laser light emitted from an exposure light source 10 is reflected by a mirror 71, and then is divided into a first exposure light beam ILl and a second exposure light beam IL2 by an optical divider 72 having a mirror with two surfaces, whereas the exposure light beams ILl and IL2 are reflected by mirrors 12A and 12B, respectively, so as to be made incident on a first illumination unit IUA and a second illumination unit IUB which have structures symmetrical to each other.
  • illumination units IUA2, IUB2 comprising polarization controllers 13 A, 13B, replaceable diffractive optical elements 14A, 14B, shaping optical systems 15 A, 15B, optical path folding mirrors 2OA,
  • Fig. 25 is a view schematically showing the illumination optical system IU2 of Fig. 24 in this example. As shown in Fig.
  • a ridge line 73 c at the boundary between the two reflecting surfaces 73 a, 73b of the optical path combining mirror 73 is positioned on the reticle conjugate plane 62A, while movable blinds 18Al and 18Bl provided one by one for the illumination units IUA2 and IUB2 are arranged on the reticle conjugate plane 62 A such that their gaps to the ridge line 73 c are independently controllable by a driving mechanism 32 A, 32B.
  • a fixed blind 31 for the illumination units IUA2 and IUB2 is placed at a position slightly defocused from the reticle conjugate plane 62A.
  • the fixed blinds 3 IA, 3 IB of Fig. 1 in the first embodiment are arranged at positions slightly defocused from the reticle conjugate plane 62 on the upstream side of the movable blinds 18 A, 18B
  • the fixed blind 31 in this example differs therefrom in that it is placed at a position slightly defocused from the reticle conjugate plane 62A on the downstream side of the movable blinds 18Al, 18Bl.
  • a variable slit disclosed in International Publication No. 2005/048326 Pamphlet for example, can be placed at any of the positions of the fixed blinds 3 IA, 3 IB, and 31 in the embodiments. Employing this structure can regulate respective illumination irregularities in a plurality of illumination fields independently of each other.
  • the optical path combining mirror 73 of this example is driven by a driving mechanism 74 such as a linear motor constituted by a rotor 74a and a stator 74b such that the ridge line 73 c moves within the aperture of the fixed blind 31 along the reticle conjugate plane 62A.
  • the movable blinds 18Al and 18Bl are driven such as to open and close the aperture between the ridge line 73 and the end portion of the fixed blind 31.
  • the optical path combining mirror 73 and the movable blinds 18Al, 18Bl are driven according to the position of the reticle R in the scanning direction by an unshown driving system similar to the stage driving system 35 in Fig. 1.
  • the exposure light beams ILl, 112 transmitted through the apertures of the movable blinds 18Al, 18Bl and fixed blind 31 in Fig. 25 illuminate patterns provided on a pattern surface (reticle surface) of a reticle R through a secondary relay optical system 22A comprising lens systems 22Aa to 22f.
  • the illumination optical system IU2 includes the above-mentioned illumination units IUA2 and IUB2, movable blinds 18Al and 18Bl, fixed blind 31, movable optical path combining mirror 73, and secondary relay optical system 22A.
  • illumination regions 75 A, 75B (apertures between the ridge line 73 c of the optical path combining mirror 73 and the movable blinds 18Al, 18Bl) formed on the reticle conjugate plane 62A by the exposure light beams from the illumination units IUA2, IUB2 are reimaged by the secondary relay optical system
  • the ridge line 73 c of the optical path combining mirror 73 also functions as a movable blind which is a counterpart of the movable blinds 18Al and 18Bl.
  • the aperture between the movable blind 18Al and the ridge line 73c will be referred to as the aperture of the movable blind 18Al 3 whereas the aperture between the movable blind 18Bl and the ridge line 73 c will be referred to as the aperture of the movable blind 18Bl.
  • Fig. 26(a) is a view showing the relationship between the field PLF of the projection optical system PL in this example and a first illumination field 77A and a second illumination field 77B which are images of fully opened apertures of the movable blinds 18Al and 18Bl in Fig. 25.
  • the first illumination field 77A and second illumination field 77B have the same size and are located at the same position while being substantially inscribed in the contour of the field
  • the illumination fields 76A, 76B in Fig. 25 are opened and closed so as not to overlap each other within their corresponding fields of view 77A, 77B.
  • the width in the scanning direction of the illumination fields 77A, 77B in Fig. 26(a) is about twice that of the illumination fields 18AP 5 18BP of Fig. 3 in the first embodiment.
  • the exposure regions 78A, 78B corresponding to the fully opened illumination regions 76A, 76B become regions identical to each other, whose width in the scanning direction is about twice that in the case of the first embodiment. Therefore, the integrated amount of exposure at the time of scanning exposure is about twice that of the first embodiment, whereby the scanning speed of the wafer W can be increased, so as to improve throughput. Since the number of pulses of irradiating exposure light on the wafer W becomes greater, the unevenness in illuminance decreases.
  • the first embodiment can also reduce the unevenness in illuminance even when the width in the scanning direction of the illumination field is about a half of this example.
  • the pattern surface of the reticle R in this example is divided by a light-shielding band 53 at the boundary into two pattern regions RA, RB in the Y direction, whereas patterns A and B are formed within the pattern regions RA and RB, respectively.
  • One scanning exposure exposes images of the patterns A, B of the two pattern regions RA, RB in the reticle R to two shot regions adjacent to each other in the scanning direction on the wafer W.
  • Figs. 27(a) to (1) are views showing positional relationships between a plurality of pattern regions RA, RB of the reticle R and two illumination regions 76A, 76B in Fig. 25 at the time of scanning exposure.
  • Figs. 28(a) to (d) show the states of apertures of the movable blinds 18Al, 18Bl (one of which is defined by the ridge line
  • Figs. 29(e) to (h) show the states of apertures of the movable blinds 18Al, 18Bl in the cases of Figs. 27(e) to (h), respectively.
  • Figs. 30(i) to (1) show the states of apertures of the movable blinds 18Al, 18Bl in the cases of Figs. 27(i) to (1), respectively.
  • the first illumination region 76A starts to open, while the second illumination region 76B starts to close (the movable blind 18Al begins to open while the movable blind 18Bl begins to close in Fig. 29(f) corresponding thereto).
  • the illumination regions 76A, 76B attain the same size (with a width which is 1/2 of the maximum width) (the apertures of the movable blinds
  • the first illumination region 76A is fully open, so that only the second pattern region RB of the reticle R is illuminated with the first illumination region 76 A (the movable blind 18Bl is completely closed in Fig. 30(i) corresponding thereto). Thereafter, as shown in Figs. 27(j) to (1), only the second pattern region RB of the reticle R is illuminated with the first illumination region 76A (only the movable blind 18Al is in the open state in Figs. 30(j) to (1) corresponding thereto), whereby the image of the pattern in the second pattern region RB is sequentially exposed to the second shot region of the wafer W.
  • the wafer W is moved stepwise in the Y direction by the width of one shot region, and the above-mentioned scanning exposure is performed, whereby the patterns within the pattern regions RA, RB of the reticle R are double- exposed to the intermediate shot region.
  • the optical path combining mirror 73 is moved in synchronization with the scanning of the reticle R, so as to be used as one of the movable blinds 18Al, 18Bl as well, whereby the movable blind mechanism can be simplified in this example.
  • a plurality of pattern regions RA, RB in the reticle R can be illuminated with broad illumination regions substantially inscribed in the field of the projection optical system PL, respectively, so that the integrated amount of exposure becomes higher on the wafer W 5 whereby the scanning speed of the wafer W can be raised, so as to improve the throughput of the exposure step.
  • the exposure apparatus (projection exposure apparatus) of the above-mentioned embodiment can be manufactured by placing a column structure which is not depicted; then incorporating an illumination optical system constituted by a plurality of optical members and a projection optical system into a main body of an exposure apparatus; optically adjusting them; attaching reticle and wafer stages constituted by a number of mechanical components to the main body of the exposure apparatus; connecting leads and pipes thereto; and conducting total adjustment (electric adjustment, verification of operations, etc.).
  • the exposure apparatus is manufactured in a clean room where the temperature, cleanness, and the like are controlled.
  • the semiconductor device is manufactured by way of a step of designing functions/performances of the device; a step of manufacturing a reticle according to the former step; a step of forming a wafer from a silicon material; a step of causing the projection exposure apparatus of the above-mentioned embodiment to perform alignment and expose a pattern of the reticle to the wafer; a step of forming a circuit pattern such as etching; a device assembling step (including dicing, bonding, and packaging steps); inspecting step; and the like.
  • the present invention is applicable not only to the projection exposure apparatus of scanning exposure type, but also to those of cell projection type (stepper type).
  • the present invention is also applicable to cases where exposure is carried out by the exposure apparatus of liquid immersion type disclosed in International Publication No. 99/49504 Pamphlet, for example.
  • a liquid supply apparatus which is not depicted in Fig. 1 locally supplies a liquid such as deionized water between the projection optical system PL and the wafer W, whereas the supplied liquid is collected by a liquid collecting apparatus not depicted.
  • EUV light extreme ultraviolet light
  • the present invention is not limited to the application to exposure apparatus for manufacturing semiconductor devices, but is widely employable in exposure apparatus for liquid crystal display devices formed on angular glass plates or display apparatus such as plasma displays and exposure apparatus for manufacturing various devices such as imaging devices (CCD and the like), micromachines, thin film magnetic heads, and DNA chips. Further, the present invention is applicable to exposure steps (exposure apparatus) when manufacturing masks (photomasks, reticles, and the like) formed with mask patterns of various devices by using photolithography steps.
  • the present invention is not limited to the above-mentioned embodiments, but can take various structures within the scope not deviating from the gist of the present invention.
  • the present invention can transfer patterns of pattern regions adjacent to each other on a mask onto a photosensitive substrate under their optimal illumination conditions. Therefore, for example, double exposure can be carried out with a high throughput under an optimal illumination condition, whereby a device having a fine pattern can be manufactured with a high precision.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Optical Elements Other Than Lenses (AREA)

Abstract

Un système optique d'éclairage (IU) d'un appareil d'exposition à projection servant à projeter et exposer un dessin d'un réticule (R) sur une plaque (W) comprend un système optique relais secondaire (22) servant à former un plan (62) se conjuguant optiquement avec une surface du réticule entre une source de lumière d'exposition (10) et le réticule (R), et un miroir combinateur (21) des trajets optiques servant à combiner les faisceaux de lumière d'exposition (IL1, IL2) provenant de la source de lumière d'exposition (10) de façon qu'ils éclairent la surface du réticule très proches l'un de l'autre, le miroir combinateur (21) des trajets optiques comportant des surfaces réfléchissantes (21a, 21b) de façon à renvoyer chacune en ce qui la concerne les faisceaux lumière d'exposition (IL1, IL2), la ligne de bordure (21c) à la limite entre les surfaces réfléchissantes (21a, 21b) étant située sur le plan (62) ou à proximité de lui.
PCT/JP2007/058223 2006-04-12 2007-04-10 Appareil optique d'éclairage, appareil d'exposition à projection, et procédé de fabrication des dispositifs WO2007119839A1 (fr)

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JP2006110342A JP4784746B2 (ja) 2006-04-12 2006-04-12 照明光学装置、投影露光装置、投影光学系、及びデバイス製造方法

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JP5308638B2 (ja) * 2006-07-14 2013-10-09 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ投影露光装置用の照明光学系
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US8384875B2 (en) 2008-09-29 2013-02-26 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
JP5187519B2 (ja) * 2008-12-10 2013-04-24 株式会社ニコン 露光装置及び露光方法、並びにデバイス製造方法
US8610878B2 (en) 2010-03-04 2013-12-17 Asml Netherlands B.V. Lithographic apparatus and method
US9081297B2 (en) 2012-05-01 2015-07-14 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography apparatus having dual reticle edge masking assemblies and method of use
JP6114952B2 (ja) * 2013-01-17 2017-04-19 カール・ツァイス・エスエムティー・ゲーエムベーハー リソグラフィによって感光性表面にパターンを転写する方法およびマイクロリソグラフィ投影露光装置の照明システム
JP6860353B2 (ja) * 2017-01-18 2021-04-14 キヤノン株式会社 評価方法、物品製造方法およびプログラム
US11175487B2 (en) * 2017-06-19 2021-11-16 Suss Microtec Photonic Systems Inc. Optical distortion reduction in projection systems
JP2022535270A (ja) * 2019-06-05 2022-08-05 アプライド マテリアルズ インコーポレイテッド フラットな光学デバイスのための開孔
WO2021186697A1 (fr) * 2020-03-19 2021-09-23 ギガフォトン株式会社 Système d'exposition et procédé de fabrication de dispositif électronique
CN115867831A (zh) 2020-07-20 2023-03-28 应用材料公司 用于光学装置的集成导电孔
CN113805439A (zh) * 2021-09-23 2021-12-17 上海度宁科技有限公司 一种投影光刻机、照明系统、控制系统及方法

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JP2007287760A (ja) 2007-11-01

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