WO2007116576A1 - レーザ照射装置 - Google Patents

レーザ照射装置 Download PDF

Info

Publication number
WO2007116576A1
WO2007116576A1 PCT/JP2007/000079 JP2007000079W WO2007116576A1 WO 2007116576 A1 WO2007116576 A1 WO 2007116576A1 JP 2007000079 W JP2007000079 W JP 2007000079W WO 2007116576 A1 WO2007116576 A1 WO 2007116576A1
Authority
WO
WIPO (PCT)
Prior art keywords
laser beam
laser
irradiation region
shaped
axis direction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2007/000079
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
Ryotaro Togashi
Toshio Inami
Junichi Shida
Hideaki Kusama
Naoyuki Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Steel Works Ltd
Original Assignee
Japan Steel Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Steel Works Ltd filed Critical Japan Steel Works Ltd
Priority to DE112007000735T priority Critical patent/DE112007000735T5/de
Publication of WO2007116576A1 publication Critical patent/WO2007116576A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08Devices involving relative movement between laser beam and workpiece
    • B23K26/083Devices involving movement of the workpiece in at least one axial direction
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08Devices involving relative movement between laser beam and workpiece
    • B23K26/082Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head
    • B23K26/0821Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head using multifaceted mirrors, e.g. polygonal mirror
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00Articles made by soldering, welding or cutting
    • B23K2101/36Electric or electronic devices
    • B23K2101/40Semiconductor devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing

Definitions

  • the present invention relates to a laser irradiation apparatus, and more particularly, to a laser irradiation apparatus capable of easily performing position control for moving a band-shaped irradiation region at a high speed in the long axis direction.
  • Patent Document 1 Japanese Patent Publication No. 04-1 021 6
  • an XY stage or a carbon heater that holds the substrate to be processed is moved in order to vibrate the belt-shaped irradiation region in the long axis direction.
  • an object of the present invention is to provide a laser irradiation apparatus capable of easily performing position control for moving the belt-shaped irradiation region at a high speed in the long axis direction.
  • the present invention provides a laser oscillator (1) that outputs a pulse of a laser beam (B 1), a reflector (2) that reflects the laser beam (B 1), and the laser described above Direction of movement of the reflection beam (B2) due to a change in the angle ( ⁇ ) or position of the reflection surface (2 b) of the reflector (2) with respect to the laser beam (B 1) on which the beam (B 1) is incident
  • a reflector (5) that holds the conductor substrate (S) and can move in the short axis direction of the strip-shaped irradiation region (4), and a reflector driving means (6) that changes the angle or position of the reflector (2).
  • a laser irradiation device (100) is provided.
  • the reflector (2) is moved, but the movable stage (5) corresponding to the XY stage in the prior art or the laser oscillator corresponding to the carbon heater in the prior art ( Since the mass of the reflector (2) is smaller than that of the optical system (1) and the optical system (3), position control that moves at high speed becomes easy.
  • the timing control means (8) adjusts the timing at which the laser beam (B 1) is pulsed by the laser oscillator (1) and the timing at which the reflector driving means (6) changes the angle or position of the reflector (2). ),
  • the position of the belt-like irradiation region can be changed within a predetermined range in the long axis direction of the belt-like irradiation region.
  • the present invention relates to a laser oscillator (1) that outputs a laser beam (B 1) in response to a trigger (G), and a rotating polygon mirror that reflects the laser beam (B 1) ( 2) and the change of the incident angle (0) of the laser beam (B 1) to the reflecting surface (2 b) of the rotating polygon mirror (2) on which the laser beam (B 1) is incident.
  • the output timing of the trigger (G) based on the Q) vary within time range of a predetermined tie varying the incident angle (0) within a predetermined angular range
  • the rotating polygon mirror (2) may be rotated at a constant speed at a speed equal to the number of mirrors whose speed is desired to change. Therefore, implementation is easy. Since the timing at which the laser beam (B 1) is output by the laser oscillator (1) is changed in accordance with the rotational phase of the rotating polygon mirror (2), the timing adjustment is also easy. Therefore, the position of the band-shaped irradiation region can be easily changed at high speed within a predetermined range in the major axis direction of the band-shaped irradiation region.
  • the laser irradiation apparatus of the present invention since the position control for moving the belt-shaped irradiation region in the long axis direction at high speed can be easily performed, the intensity unevenness of the laser beam in the long axis direction of the belt-shaped irradiation region And uneven irradiation in the longitudinal direction of the belt-shaped irradiation region due to minute unevenness of the substrate to be processed can be suitably suppressed.
  • FIG. 1 is a diagram illustrating the configuration of a laser irradiation apparatus according to a first embodiment.
  • FIG. 2 A timing chart showing the operation of the timing control circuit according to the first embodiment.
  • FIG. 3 is a top view showing the position of the belt-shaped irradiation region in the long axis direction.
  • FIG. 1 is a configuration explanatory diagram illustrating a laser irradiation apparatus 100 according to the first embodiment.
  • This laser irradiation device 100 has a laser oscillator 1 that outputs a pulse of a laser beam B 1 in response to a trigger G, a rotating polygon mirror 1 that reflects the laser beam B 1, and a laser beam B 1 incident thereon.
  • the semiconductor substrate is formed by shaping the reflected beam B 2 into a strip-shaped irradiation region 4 whose major axis is the direction in which the reflected beam B 2 oscillates due to a change in the incident angle 0 of the laser beam B 1 on the reflecting surface 2 b of the rotating polygon mirror 2.
  • a motor 6 that rotates at a constant speed
  • an encoder 7 that outputs rotational phase information Q of the rotating polygon mirror 2
  • a timing control that changes the output timing of the trigger G within a predetermined time range based on the rotational phase information Q Circuit 8 and It is Bei.
  • the rotation axis 2a of the rotating polygon mirror 2 is in the vertical direction, and the rotating polygon mirror 2 rotates in a horizontal plane.
  • Laser beam B 1 and reflected beam B 2 are horizontal.
  • the semiconductor substrate S is placed horizontally. Therefore, the direction of the reflected beam B 1 whose intensity is made uniform in the major axis direction and the minor axis direction by the homogenizer 3 a is changed from the horizontal direction to the vertical direction by the mirror 3 b. Then, it is condensed in the short axis direction by the kamaboko-shaped lens 3c and irradiated onto the semiconductor substrate S.
  • FIG. 2 is a timing chart for explaining the operation of the timing control circuit 8. Based on the rotational phase information Q, the timing control circuit 8 generates a 45 ° pulse Q ′ indicating the timing at which the incident angle 6 is 45 °.
  • the period of this 45 ° pulse Q ' is the value obtained by dividing the rotation time of rotating polygon mirror 2 by the number of rotating polygon mirror 2 mirrors.
  • the period corresponds to an average time interval at which the laser oscillator 1 outputs a pulse of the laser beam B1.
  • the time during which the laser oscillator 1 outputs the laser beam B 1 as a pulse is shorter than the period ⁇ .
  • the timing control circuit 8 randomly generates one of the integers from 0 to 45, 45 ° Trigger G is output when “r + (m_MZ2) (MZ2)” elapses from pulse Q '.
  • the trigger G is output and the incident angle 0 becomes “45 ° _ (m_4) Q? Z4”.
  • FIG. 3 is a top view showing the movement of the belt-shaped irradiation region 4 in the long axis direction.
  • the rotation polygon mirror 2 only needs to be rotated once in a time that is several times the number of mirrors of the period ⁇ .
  • the time interval for pulse output of the laser beam B 1 by the laser oscillator 1 is the shortest “__S”, but this is also easy to implement because there are no moving parts. Therefore, the position of the strip-shaped irradiation region 4 can be moved at high speed within the predetermined range R in the major axis direction of the strip-shaped irradiation region 4.
  • Trigger G may be output randomly within the time range from the elapse of “r_S” to the elapse of 4 ° from pulse Q '.
  • a mirror that reciprocally vibrates in the direction of the laser beam ⁇ 1 may be used. In this case, change the output timing of trigger G according to the vibration phase.
  • a galvano mirror that oscillates and oscillates within a predetermined angle range may be used.
  • the output timing of the trigger G is changed according to the oscillation phase of the galvanometer mirror.
  • a galvano mirror may be used instead of the rotating polygon mirror 2, the trigger G may be output at a constant period, and the angle of the galvano mirror may be changed randomly within a predetermined angular range for each rig G.
  • the laser irradiation method and the laser irradiation apparatus of the present invention can be used for, for example, production of a semiconductor layer and activation processing.

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Laser Beam Processing (AREA)
  • Lasers (AREA)
  • Recrystallisation Techniques (AREA)
  • Mechanical Light Control Or Optical Switches (AREA)
  • Semiconductor Lasers (AREA)
PCT/JP2007/000079 2006-03-30 2007-02-13 レーザ照射装置 Ceased WO2007116576A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE112007000735T DE112007000735T5 (de) 2006-03-30 2007-02-13 Laserbestrahlungsgerät

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006094484A JP4549996B2 (ja) 2006-03-30 2006-03-30 レーザ照射装置
JP2006-094484 2006-03-30

Publications (1)

Publication Number Publication Date
WO2007116576A1 true WO2007116576A1 (ja) 2007-10-18

Family

ID=38580878

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/000079 Ceased WO2007116576A1 (ja) 2006-03-30 2007-02-13 レーザ照射装置

Country Status (5)

Country Link
JP (1) JP4549996B2 (https=)
KR (1) KR101028598B1 (https=)
DE (1) DE112007000735T5 (https=)
TW (1) TW200737352A (https=)
WO (1) WO2007116576A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9209347B2 (en) * 2011-10-27 2015-12-08 Applied Materials, Inc. Laser crystallization and polycrystal efficiency improvement for thin film solar
KR101881423B1 (ko) 2011-11-24 2018-07-25 삼성디스플레이 주식회사 결정화 장치, 결정화 방법 및 유기 발광 표시 장치의 제조 방법
KR101997095B1 (ko) * 2016-07-22 2019-07-08 전자부품연구원 수평 분해능 및 영상획득 프레임이 제어되는 스캐닝 라이다
JP7270652B2 (ja) * 2019-01-23 2023-05-10 ギガフォトン株式会社 レーザ加工装置及び被加工物の加工方法
JP7795880B2 (ja) * 2021-07-12 2026-01-08 住友重機械工業株式会社 アニール装置の制御装置、アニール装置、及びアニール方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52143755A (en) * 1976-05-26 1977-11-30 Hitachi Ltd Laser, zone melting device
JPH09260684A (ja) * 1996-01-17 1997-10-03 Toshiba Corp 液晶表示装置の製造方法
WO2004042806A1 (ja) * 2002-11-05 2004-05-21 Sony Corporation 光照射装置及び光照射方法
JP2004349415A (ja) * 2003-05-21 2004-12-09 Hitachi Ltd アクティブ・マトリクス基板の製造方法およびこれを用いた画像表示装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0410216A (ja) 1990-04-26 1992-01-14 Fuji Photo Film Co Ltd 磁気記録媒体及びその製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52143755A (en) * 1976-05-26 1977-11-30 Hitachi Ltd Laser, zone melting device
JPH09260684A (ja) * 1996-01-17 1997-10-03 Toshiba Corp 液晶表示装置の製造方法
WO2004042806A1 (ja) * 2002-11-05 2004-05-21 Sony Corporation 光照射装置及び光照射方法
JP2004349415A (ja) * 2003-05-21 2004-12-09 Hitachi Ltd アクティブ・マトリクス基板の製造方法およびこれを用いた画像表示装置

Also Published As

Publication number Publication date
JP2007273539A (ja) 2007-10-18
TWI380369B (https=) 2012-12-21
KR20080109788A (ko) 2008-12-17
TW200737352A (en) 2007-10-01
DE112007000735T5 (de) 2009-01-22
KR101028598B1 (ko) 2011-04-11
JP4549996B2 (ja) 2010-09-22

Similar Documents

Publication Publication Date Title
JP4044539B2 (ja) ポリゴンミラーを利用するレーザ加工装置
JP5654234B2 (ja) X−y高速穴あけシステム
US20120187103A1 (en) Pulse laser machining apparatus and pulse laser machining method
WO2007116576A1 (ja) レーザ照射装置
JP6484272B2 (ja) レーザ加工装置およびレーザ加工方法
TWI378839B (en) Laser machining method and laser machining apparatus
JP5861494B2 (ja) レーザ加工装置およびレーザ加工方法
CN105478996A (zh) 激光加工装置
JP2019081185A (ja) レーザ加工システム
JP2009527925A (ja) レーザービーム・ミクロスムージング
JP6163035B2 (ja) レーザ加工装置
CN100546754C (zh) 激光加工装置及其调整方法
JP2025161977A (ja) レーザ溶接方法及びレーザ溶接装置
CN117359092A (zh) 一种激光加工方法及装置
KR101796198B1 (ko) 레이저 가공장치 및 이를 이용한 레이저 가공방법
CN1324079A (zh) 激光调整方法及其装置
JP2002290007A (ja) 回路基板の製造方法及び製造装置
JP5897825B2 (ja) レーザ照射装置及びレーザ照射方法
JP6150713B2 (ja) レーザ照射方法および装置
JP2004098120A (ja) レーザ加工方法及びレーザ加工装置
JP4039306B2 (ja) 立体回路パターンの形成方法、装置、及びこれらを用いて製造される立体回路板
TW201531360A (zh) 用於處理雷射的設備和方法
WO2019065533A1 (ja) ガラス基板の切断装置、切断方法、プログラム、及び記憶媒体
JP4169264B2 (ja) 光ビーム生成装置
KR20100032645A (ko) 레이저 가공 장치

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 07706327

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 1020087023807

Country of ref document: KR

RET De translation (de og part 6b)

Ref document number: 112007000735

Country of ref document: DE

Date of ref document: 20090122

Kind code of ref document: P

122 Ep: pct application non-entry in european phase

Ref document number: 07706327

Country of ref document: EP

Kind code of ref document: A1