WO2007116443A1 - Dispositif semi-conducteur et son procédé de production - Google Patents
Dispositif semi-conducteur et son procédé de production Download PDFInfo
- Publication number
- WO2007116443A1 WO2007116443A1 PCT/JP2006/306665 JP2006306665W WO2007116443A1 WO 2007116443 A1 WO2007116443 A1 WO 2007116443A1 JP 2006306665 W JP2006306665 W JP 2006306665W WO 2007116443 A1 WO2007116443 A1 WO 2007116443A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- film
- wiring
- group
- hydrogen
- conductive
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 83
- 239000004065 semiconductor Substances 0.000 title claims description 52
- 230000008569 process Effects 0.000 title description 42
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 227
- 239000001257 hydrogen Substances 0.000 claims abstract description 227
- 239000004020 conductor Substances 0.000 claims abstract description 155
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 151
- 239000003990 capacitor Substances 0.000 claims abstract description 132
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 10
- 238000004519 manufacturing process Methods 0.000 claims description 91
- 229910045601 alloy Inorganic materials 0.000 claims description 56
- 239000000956 alloy Substances 0.000 claims description 56
- 239000000463 material Substances 0.000 claims description 46
- 229910052741 iridium Inorganic materials 0.000 claims description 24
- 229910052707 ruthenium Inorganic materials 0.000 claims description 24
- 229910052737 gold Inorganic materials 0.000 claims description 21
- 229910052762 osmium Inorganic materials 0.000 claims description 21
- 229910052703 rhodium Inorganic materials 0.000 claims description 21
- 229910052709 silver Inorganic materials 0.000 claims description 21
- 229910052697 platinum Inorganic materials 0.000 claims description 20
- 229910052719 titanium Inorganic materials 0.000 claims description 18
- 229910052779 Neodymium Inorganic materials 0.000 claims description 17
- 229910052791 calcium Inorganic materials 0.000 claims description 17
- 229910052746 lanthanum Inorganic materials 0.000 claims description 17
- 229910052744 lithium Inorganic materials 0.000 claims description 17
- 229910052749 magnesium Inorganic materials 0.000 claims description 17
- 229910052758 niobium Inorganic materials 0.000 claims description 17
- 229910052708 sodium Inorganic materials 0.000 claims description 17
- 229910052726 zirconium Inorganic materials 0.000 claims description 17
- 229910052782 aluminium Inorganic materials 0.000 claims description 16
- 229910052720 vanadium Inorganic materials 0.000 claims description 16
- 229910052802 copper Inorganic materials 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 12
- 229910052759 nickel Inorganic materials 0.000 claims description 10
- 229910052742 iron Inorganic materials 0.000 claims 5
- 239000011229 interlayer Substances 0.000 abstract description 124
- 239000003292 glue Substances 0.000 abstract description 96
- 150000002431 hydrogen Chemical class 0.000 abstract description 76
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 abstract description 75
- 238000009792 diffusion process Methods 0.000 abstract description 62
- 239000000470 constituent Substances 0.000 abstract description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 6
- 230000035515 penetration Effects 0.000 abstract description 3
- 230000003449 preventive effect Effects 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 description 100
- 239000002184 metal Substances 0.000 description 100
- 239000010410 layer Substances 0.000 description 65
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 54
- 238000004544 sputter deposition Methods 0.000 description 54
- 230000004888 barrier function Effects 0.000 description 51
- 238000003860 storage Methods 0.000 description 51
- 229910052814 silicon oxide Inorganic materials 0.000 description 49
- 238000005530 etching Methods 0.000 description 47
- 239000010949 copper Substances 0.000 description 45
- 230000004048 modification Effects 0.000 description 44
- 238000012986 modification Methods 0.000 description 44
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 42
- 239000010936 titanium Substances 0.000 description 41
- 238000001312 dry etching Methods 0.000 description 40
- 238000001459 lithography Methods 0.000 description 39
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 35
- 238000005229 chemical vapour deposition Methods 0.000 description 28
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 25
- 229910052581 Si3N4 Inorganic materials 0.000 description 25
- 238000010521 absorption reaction Methods 0.000 description 25
- 230000001681 protective effect Effects 0.000 description 25
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 25
- 230000006870 function Effects 0.000 description 23
- 239000010948 rhodium Substances 0.000 description 22
- 238000000137 annealing Methods 0.000 description 21
- 239000010931 gold Substances 0.000 description 21
- 239000007789 gas Substances 0.000 description 19
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 18
- 230000002265 prevention Effects 0.000 description 18
- 230000015572 biosynthetic process Effects 0.000 description 15
- 238000012545 processing Methods 0.000 description 14
- 239000011575 calcium Substances 0.000 description 13
- 239000011777 magnesium Substances 0.000 description 13
- 239000010955 niobium Substances 0.000 description 13
- 239000011734 sodium Substances 0.000 description 13
- 229910000510 noble metal Inorganic materials 0.000 description 12
- 239000010944 silver (metal) Substances 0.000 description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 9
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 9
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 9
- 229910052772 Samarium Inorganic materials 0.000 description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 9
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 9
- 229910052736 halogen Inorganic materials 0.000 description 9
- 150000002367 halogens Chemical class 0.000 description 9
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 9
- 150000002739 metals Chemical class 0.000 description 9
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 9
- 238000005240 physical vapour deposition Methods 0.000 description 9
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 9
- 239000004332 silver Substances 0.000 description 9
- 229910018182 Al—Cu Inorganic materials 0.000 description 8
- 239000012535 impurity Substances 0.000 description 8
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 7
- 229910000881 Cu alloy Inorganic materials 0.000 description 7
- 238000000151 deposition Methods 0.000 description 7
- 230000014759 maintenance of location Effects 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 230000001133 acceleration Effects 0.000 description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000011049 filling Methods 0.000 description 5
- 239000007769 metal material Substances 0.000 description 5
- 229910044991 metal oxide Inorganic materials 0.000 description 5
- 150000004706 metal oxides Chemical class 0.000 description 5
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 5
- 238000005546 reactive sputtering Methods 0.000 description 5
- 230000000903 blocking effect Effects 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 239000010970 precious metal Substances 0.000 description 4
- 239000011232 storage material Substances 0.000 description 4
- 229910019899 RuO Inorganic materials 0.000 description 3
- 229910004121 SrRuO Inorganic materials 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000007772 electrode material Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- 238000001552 radio frequency sputter deposition Methods 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- -1 p t Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 238000007790 scraping Methods 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910020684 PbZr Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000009545 invasion Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
- H01L28/57—Capacitors with a dielectric comprising a perovskite structure material comprising a barrier layer to prevent diffusion of hydrogen or oxygen
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/40—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the peripheral circuit region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/65—Electrodes comprising a noble metal or a noble metal oxide, e.g. platinum (Pt), ruthenium (Ru), ruthenium dioxide (RuO2), iridium (Ir), iridium dioxide (IrO2)
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Semiconductor Memories (AREA)
Abstract
L'invention concerne un matériau conducteur empêchant le passage d'hydrogène, présentant la capacité d'absorber l'hydrogène, utilisé en combinaison avec des couches (23, 27, 28) bloquant la diffusion d'hydrogène, afin d'empêcher de manière parfaitement sûre l'hydrogène généré d'atteindre la couche ferroélectrique (25). On dépose ce matériau conducteur empêchant le passage d'hydrogène, ou un matériau conducteur contenant ce matériau, en l'occurrence du palladium (PC), sur un diélectrique (33) intermédiaire de manière à remplir les trous d'interconnexion (34a, 35a) par des couches d'adhérence (34b, 35b). On effectue ensuite un processus CMP pour former des obturations (34, 35). Cette construction relativement simple permet d'empêcher de manière sûre la pénétration d'eau/hydrogène dans les parties interne, et permet ainsi à la structure (30) de condensateur ferroélectrique de conserver une performance élevée. Elle peut être réalisée sans augmentation du nombre de composants et du nombre d'étapes.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008509595A JPWO2007116443A1 (ja) | 2006-03-30 | 2006-03-30 | 半導体装置及びその製造方法 |
| PCT/JP2006/306665 WO2007116443A1 (fr) | 2006-03-30 | 2006-03-30 | Dispositif semi-conducteur et son procédé de production |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2006/306665 WO2007116443A1 (fr) | 2006-03-30 | 2006-03-30 | Dispositif semi-conducteur et son procédé de production |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2007116443A1 true WO2007116443A1 (fr) | 2007-10-18 |
Family
ID=38580752
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/JP2006/306665 WO2007116443A1 (fr) | 2006-03-30 | 2006-03-30 | Dispositif semi-conducteur et son procédé de production |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPWO2007116443A1 (fr) |
| WO (1) | WO2007116443A1 (fr) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1126722A (ja) * | 1997-07-02 | 1999-01-29 | Fujitsu Ltd | 半導体装置及びその製造方法 |
| JPH1140761A (ja) * | 1997-07-23 | 1999-02-12 | Fujitsu Ltd | 半導体装置及びその製造方法 |
| JP2001257322A (ja) * | 2000-03-13 | 2001-09-21 | Oki Electric Ind Co Ltd | 強誘電体を用いた半導体デバイスの構造及び製造方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1187633A (ja) * | 1997-09-02 | 1999-03-30 | Fujitsu Ltd | 半導体装置の製造方法 |
| JP2003243625A (ja) * | 2002-02-19 | 2003-08-29 | Seiko Epson Corp | 強誘電体メモリ装置およびその製造方法 |
| JP3836052B2 (ja) * | 2002-06-25 | 2006-10-18 | 沖電気工業株式会社 | 半導体素子及びその製造方法 |
-
2006
- 2006-03-30 WO PCT/JP2006/306665 patent/WO2007116443A1/fr active Application Filing
- 2006-03-30 JP JP2008509595A patent/JPWO2007116443A1/ja active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1126722A (ja) * | 1997-07-02 | 1999-01-29 | Fujitsu Ltd | 半導体装置及びその製造方法 |
| JPH1140761A (ja) * | 1997-07-23 | 1999-02-12 | Fujitsu Ltd | 半導体装置及びその製造方法 |
| JP2001257322A (ja) * | 2000-03-13 | 2001-09-21 | Oki Electric Ind Co Ltd | 強誘電体を用いた半導体デバイスの構造及び製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPWO2007116443A1 (ja) | 2009-08-20 |
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