WO2007066616A1 - 放射線検出ユニットおよび放射線検査装置 - Google Patents
放射線検出ユニットおよび放射線検査装置 Download PDFInfo
- Publication number
- WO2007066616A1 WO2007066616A1 PCT/JP2006/324174 JP2006324174W WO2007066616A1 WO 2007066616 A1 WO2007066616 A1 WO 2007066616A1 JP 2006324174 W JP2006324174 W JP 2006324174W WO 2007066616 A1 WO2007066616 A1 WO 2007066616A1
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- Prior art keywords
- spacer
- radiation
- spacers
- semiconductor
- conductor
- Prior art date
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- 230000005855 radiation Effects 0.000 title claims abstract description 44
- 125000006850 spacer group Chemical group 0.000 claims abstract description 98
- 239000004065 semiconductor Substances 0.000 claims abstract description 88
- 238000001514 detection method Methods 0.000 claims description 81
- 239000004020 conductor Substances 0.000 claims description 63
- 230000010365 information processing Effects 0.000 claims description 6
- 229910010293 ceramic material Inorganic materials 0.000 claims description 3
- 238000009826 distribution Methods 0.000 claims description 3
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- 238000000034 method Methods 0.000 description 7
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- 238000010586 diagram Methods 0.000 description 4
- 238000007689 inspection Methods 0.000 description 4
- 201000011510 cancer Diseases 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 102000007620 Pulmonary Surfactant-Associated Protein C Human genes 0.000 description 2
- 108010007125 Pulmonary Surfactant-Associated Protein C Proteins 0.000 description 2
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- 230000005611 electricity Effects 0.000 description 2
- 238000010191 image analysis Methods 0.000 description 2
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- 239000000203 mixture Substances 0.000 description 2
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Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
- G01T1/249—Measuring radiation intensity with semiconductor detectors specially adapted for use in SPECT or PET
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B6/00—Apparatus or devices for radiation diagnosis; Apparatus or devices for radiation diagnosis combined with radiation therapy equipment
- A61B6/02—Arrangements for diagnosis sequentially in different planes; Stereoscopic radiation diagnosis
- A61B6/03—Computed tomography [CT]
- A61B6/037—Emission tomography
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
- G01T1/242—Stacked detectors, e.g. for depth information
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/085—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors the device being sensitive to very short wavelength, e.g. X-ray, Gamma-rays
Definitions
- Radiation detectors having radiation conductor detectors and radiation devices using the same, and particularly to radiation detectors that detect the gamma rays emitted from the radioisotopes in.
- X C X computer
- SP C singepho onemsson CT
- Narrow X-beams from various directions are detected on the surface with X C, the transmitted X-rays are detected, and the inter-distribution between the absorption of the X-rays within the surface is calculated with the mp.
- the gun is S 36 It is located in.
- the gun consists of a semiconductor detector 2 in which semiconductor detectors () are arranged, and an output circuit 3 for electrically detecting the gun wire inserted in the conductor detector of. Moreover, the output of the gun wire from the detection circuit 3 indicating that the gun wire has been fired is also reported, and the gun wire is fired based on the report of the semiconductor detector fired by the gun wire. Then, by detecting a large number of gun rays, the image of the inspection cloth in S is regenerated.
- a large number of conductor detectors are arranged in the semiconductor detector 2 in order to improve the detection rate.
- a radiation 2 in which 6 with a semiconductor detector 5 mounted in 4 is arranged is proposed (for example, a patent).
- the disappearance gun device is the same based on the information of P and its conductor detector, if the semiconductor detector is installed at a certain degree, the gun position will be decreased, resulting in a lower spatial resolution.
- semiconductor detection 2 6 is stored and fixed in ga of guide 9 whose side part is fixed to the wall of 4.
- the guide 9 Since the guide 9 is made of metal resin, it is difficult to mold its ga, for example, a few times. In addition, the guide 9 will be attached differently. Moreover, since 6 is fixed when ga of 6 is satisfied, it is required that the degree of 6 is good. As a result, it also invites the addition of Group 6. In addition, it affects the number of semiconductor detections 5 for 6.
- the wiring, the semiconductor detector for detecting the radiation adhered to the surface of, and the spacer having the spacer adhered to the surface of, are fixed.
- the semiconductor detector and the spacer are arranged so as to have a predetermined relationship, and the number of those specialists are laminated so as to have a predetermined relationship. Radiation is provided.
- the stacked semiconductor elements and the spacers are arranged so as to have a predetermined relationship with each other.
- a stack of numbers of specialists are arranged in a predetermined relationship with each other. Therefore, it is possible that semiconductor
- a radiation device comprising: an information processing stage for acquiring the distribution information of the radioisotope based on the information including the radiation and the position.
- 001 P is the device.
- FIG. 2 is a plan view for explaining the problems of the conventional ray shot.
- 3 is a block diagram showing the composition of the P device related to the implementation of Ming. 4 It is a semiconductor detection device related to the implementation of Ming. It is 5.
- FIG. 6 is a plan view of a 6-conductor detector.
- FIG. 8 is a plan view of the conductor detection unit shown in FIG.
- FIG. 9 is a side view of the conductor detection unit shown in FIG.
- FIG. 14 is a C C plane view of the conductor detection unit shown in 114.
- FIG. 15 is a plan view of a 15-conductor detection unit.
- FIG. 3 is a second view of the 16-conductor detection unit.
- FIG. 17 is a third view of the 17-conductor detection unit.
- FIG. 4 is a view of 4 of the 18-conductor detection unit.
- 003 3 is a block diagram showing the composition of the P device according to the implementation of Ming.
- P is placed around S and detects the gun line .
- An information processing unit 2 that processes the data from the detection dish and regenerates the data of the S tone obtained, a display 3 that displays the image data, and a S detection control.
- 4 and information processing unit 2 control 4 is composed of input / output 5 and the like which sends data to control 4.
- S be the direction of Z (Z and Z). It may be movable in the Z direction relative to a and S. It should be noted that although P 8 inspections to dishes are shown in 2, the number of these is not an example, and the number of detections to dishes is selected.
- the test agent used in S is introduced in S.
- the conductor detector 2 is arranged so that the gun wire inlet faces the subject S.
- Two electrons v, v occur at the same time when the electrons generated from 0000 tons disappear. Since the 2 guns v and 8 are emitted at 8 degrees to each other, use the conductor detection of the detection 2 of the detections (25 shown in 4) of the detections facing each other.
- the semiconductor detector 2 that is fired by the guns v and v sends electricity () generated by the guns v and v to the detection circuit 6.
- the 002 output circuit 6 is based on the detection signals supplied from the detection circuit () and the semiconductor detection unit 2 and is the time when the guns v, v entered the detector (
- the detection circuit 6 sends the detection data such as human radiation and (another number of the element that has detected the radiation) to the information processing unit 2.
- the output circuit of output circuit 6 consists of an analog path and a digital path.
- the information processing unit 2 generates image data based on the detected data and the intensity and generation algorithm. Indense, person shooting
- the data is judged to be valid, Indense information Also, data that does not match the intensities and cancers is judged to be invalid and discarded. Then, the image data is reproduced based on the index information, the detections included in the index information, the detectors corresponding to the detection information, and the like, based on a predetermined generation mechanism (for example, an expected value (ec aoa za o)). To achieve. 3 displays the image data regenerated according to the request of input / output 5.
- a predetermined generation mechanism for example, an expected value (ec aoa za o)
- P detects the cancer line from Ton selectively located in S and reconstructs the data of To state.
- 00244 is a semiconductor detection device according to the embodiment of the present invention.
- Figure 4 is a view of the gun wire from the direction of human radiation, that is, the semiconductor detector.
- the semiconductor detector 2 is composed of a body in which a plurality of 22 are laminated on the support 2, and is fixed in the vertical direction by 23 consisting of four laminated boats 23a and nuts 23b. It In Section 4, the case where the number of detections 22 is 6 is shown as an example. 22 is composed of wiring 24, semiconductor detection 25, connector 26, spacer 28 and the like. The bottom 22 is laminated with only the respective spacers 28 in contact with each other.
- the gun wire emitted from the body is converted into an electric signal by the semiconductor detection 25 and is output through the detection circuit from the connector 26, the output circuit kit (PC) 29 of (6 in 3), etc. .
- 00265 is for detection. However, for explanation,
- a semiconductor detector 25 and a connector 26 are fixed on the wire 24 in the detector 22.
- 24 is glass key
- the wiring tan 24a provided at 24 connects the semiconductor detection 25 connector to electricity.
- the type of connector is not particularly limited, and for example, a tablet (a laptop that can be connected to a PC, etc.
- Nectar can be used.
- 00286 is a plan view of the semiconductor detector.
- the semiconductor detection 25 includes a plate-shaped conductor crystal body 3, 3 formed on the surface of the semiconductor crystal body 3, 2 32 formed on the crystal body 3, and the like.
- Conductor crystal body 3 is composed of, for example, um (Cd.), Cd z e (CZ), and taum (), which are sensitive to a gun wire whose onion is e.
- these materials may include a material for controlling conductivity. Is preferable to Cd e because it has a higher mechanical degree than Cd e and causes defects in processing.
- the conductor crystal body 2 is obtained by forming a semiconductor crystal by using a semiconductor, which is a semiconductor, and moving it and cutting it into a flat plate at a predetermined position.
- 003 03 has a surface of the semiconductor crystal body 3 formed of a substantially film. Negative bias b is given to 3 and becomes the source.
- the conductor crystal 3 is made of Cd e, P is used for 3, for example.
- Ias b is set to 6 V or higher for DC voltage.
- Numeral 032 13 2 is composed of a number of films that extend in the direction of the semiconductor crystal body 3, have a predetermined width in the X direction, and are mutually adjacent to electrodes.
- 2 2 3 is, for example, (), and 1 (indium) is injected into the 2 32 side of the semiconductor crystal 3. This forms a tight fit between 2 32 and Cd e.
- It is fixed to the electrode 24b provided on the wiring 24 of 2 32 by the conductive anisotropic 33.
- 24b is connected to the wiring tan (24 "shown in 5) and is connected via a resistor, so that 2 32 is an anode.
- 24b is connected to the output circuit of the detection circuit via a capacitor. It is connected to the pump, and 6 has only one circuit connected to 2 32 and the other circuit connected to the second.
- the spacer 28 is composed of a flat plate 28 extending in the X direction and a pair of 28 extending in front of the base 28 in the X direction (into the gun wire). Have The spacer 28 has a base 28 and a pair of 28 to hold the three sides
- the open space is formed. This space houses the semiconductor detector 25 when the spacer 28 is fixed to the wiring 24. The size of this space is larger than that of the semiconductor detector 25, and is bypassed with the semiconductor detector 25 and the spacer 28. This makes the semiconductor detector 25 and the specialist 28 more attractive than they would be in contact with each other.
- Spacer 28 has a flat 28c. Further, when the spacer 28 is 28c, it has an upper surface 28d, which is the highest surface, and a step 28e lower than the upper surface 28d. The spacer 28 has a flat upper surface 28d, and the lower surface of the detection 22 is defined by the upper surfaces 28d and 28c.
- 28e extends toward the space 28. 28e is shown in FIGS. 8 and 9 below, to avoid contact with 24 of the detectors 22 stacked on the spacer 28.
- the spacer 28 is provided with mouth portions 28 1 to 28 3 penetrating in the thickness direction. Mouth 28 is provided with 2 on the X side of base 28, respectively. The mouth portion 28 receives the axis of the bot 23a for fixing the semiconductor detection unit 2, and the () is set larger than the axis of the bot. There are two openings 28 on each side of the X side, but it can be either three or three. Further, the openings 28 2 28 3 are provided for introducing, for example, for fixing to the 24 spacer 28 shown in 4. There are no particular restrictions on the number of mouths 28 2 2 8 3 and it is not provided.
- the spacer 28 is not particularly limited as long as it is a material that does not deform due to attachment in the vertical direction when the semiconductor detection kit 2 is fixed. () And ceramics. It is preferable that the spacer 28 comprises, among other things, a cellar and a material. When a ceramic material is used for the spacer 28, the molding upper surfaces 28d and 28c are formed by polishing with a mold. With the ceramic material, a flatness is achieved by polishing, and thus a high dimensional degree is obtained, so that a good degree of space is obtained. Note that the step 28e is relatively harder to polish than the upper surface 28d 28c, but may be less accurate than the upper surface 28d 28c of the step 28e, so that the spacer 28 is easy to manufacture.
- 28 of the pair of spacers 28 have 28 of them gradually coming inward toward the front (gun) of the direction.
- the semiconductor detector 2 can be densely arranged by arranging the conductor detector 2 in the vicinity of 28 of 28.
- 00398 is a plan view of the conductor detection unit shown in 4. 8 to find
- the semiconductor detector 25 and the semiconductor detector 25 are arranged and attached so as to form a predetermined relationship with the semiconductor detector 25.
- the constants are, for example, the X direction of the semiconductor detector 25 with 28f of the spacer 28 and the semiconductor detector 25 with the 28 of spacer 28. By setting in this way, the relationship with the conductor detection 25 spacer 28 on the X plane is determined.
- the upper and lower 22 are laminated so that only the respective specialists 28 are in contact with each other. That is, the 22c of 28 spacers 28c and the 22d of 28 spacers 28d are in contact. It is avoided because 22 of 24 and 28e of Spacer 28 are provided. As a result, the 22 vertical relations with the 28d 28c of the spacer 28, that is, only the spacer 28 Maru
- the surface of the wiring 24 is bonded to the spacer 28c of the spacer 28.
- the Z direction of the semiconductor detector 25 is determined with reference to 28c of the spacer 28. Since the Z-direction position of 22 is also determined by the spacer 28c of the spacer 28, the Z-direction position of the semiconductor detection 25 is determined by the spacer 28. Only the spacer 28 thickness needs to be precision formed. Since it is easy, the Z-direction position of the semiconductor detector 25 is set accurately. Further, since the spacer 28 touches only the base 28 and the X side region of the 28, the frequency of the spacer 28 is further improved.
- An adhesive 35 is formed between the space 28c 24 of the spacer 28 and the space 28c 24 to secure the space between the space 28c 24 and the space 28c 24.
- 35 is not particularly limited to the material, but, for example, Ki-based is used. 35 has almost no repercussions, for example, with a size of 24, which is much lower than below detection 22. Note that in 9 et al., The size of the adhesive 35 is shown by the other parts and the thickness.
- adhesive may be introduced into the mouth portions 28 2 28 3 shown in FIG. 8 to fix the spacers to the spacers 28 24.
- the adhesive 35 can be made thinner and the length of the adhesive 35 can be ().
- 004 52 is a diagram showing the position of the conductor detection unit at position P.
- the semiconductor detector is arranged in a plane that is perpendicular to, but in this case, Fig. 2 is a view from the opposite side.
- the semiconductor detector 2 is arranged so that the semiconductor detector 25 is.
- the conductor detector 2 is arranged so that 28 of the spacers 28 are in close proximity to each other, for example in a row. Since 28 of 28 has a shape that gradually enters the inside toward the entrance () of the gun wire, the conductor detection unit 2 can be arranged closer. This can reduce the distance between the conductor detections 25 and It is possible to reduce the number of gun rays that cannot be detected through the gap. As a result, the rate of P placement can be improved. Further, by appropriately selecting the corner of the outer side 28, the semiconductor detector 2 can be arranged in the direction with the center of S as the center.
- the implementation depends on the degree of the semiconductor conductors 25 arranged in the detector 22 of the semiconductor detector 2, the conductor conductors 25 of each 22 and the spacers 28 and 28 bodies. Therefore, precision is required to place 25 semiconductor crystals, and only semiconductor crystal 25 spacer 28 is required. That is, accuracy is less required. Furthermore, the degree of these requirements is the shape of the semiconductor bond 25, 28 and 28f shown in 8 that determines the position of the spacer, and the length of the spacer 28. Therefore, there are only a limited number of methods that require precision, so you can obtain precision. Therefore, as many conductor detectors 25 as semiconductor detectors 2 can be arranged at one time.
- the spacer 28 has a flat upper surface 28d and a flat surface 28d, the spacer 28 has a good flatness and a predetermined precision by mechanical polishing even if the spacer 28 is made of a ceramic having a large mechanical degree. The accuracy is easily obtained. Therefore, there is a point that the degree of space of the spacer 28 is easy to obtain, and the thin plate of the space between the spacer 28 is easy. Therefore, the distance between the bottoms of the conductor connections 25 of the semiconductor detector 2 can be shortened and the detection can be performed. It is possible to reduce this and improve the detection rate. In addition, this allows the semiconductor detector 2 to be made smaller.
- 005 0 3 and 4 are plan views showing the manufacturing process of the semiconductor detector.
- the semiconductor detection 25 and the connector 26 are arranged and attached to the wiring 24.
- the conductor detection 25 should be arranged and attached to the electrode 24b shown in 6 once in a while.
- the spacer 28 is positioned above the 3 with respect to the semiconductor detector 25, and the 24 faces of the spacer 28 are fixed by adhesion. Physically, the spacer 28 reads two 25a and 25b in the form of a semiconductor detector 25 by an image analysis device, and for each of these 25a 25b, 28f 28 is a predetermined and a line.
- the detection 22 is laminated as shown in 4, and the bot 23a is put into the mouth () of the support 2 and the mouth 28 of the spacer while controlling the surface of the spacer 28 in the X and direction.
- the spacer 28 is pressed so as to regulate the Xs and 28f and 28f in the X direction, for example, 28s and 28f in the X direction of the spacer 28 shown in 4, so as to align these surfaces. Since the Specs 28 are isomorphic to each other, the location of the Specs 28 is. Then, tighten the nut 23b to fix the sensor 22.
- the support 22 is fixed directly to the support 2, the detector 22 may be fixed to the support 2 first and then to the support 2 instead.
- the semiconductor detector 2 is formed by the above.
- 22 conductors are detected and 25 spacers 28 are fixedly attached to a fixed position, and 22 detectors are fixed by 28 specialists. It is possible to set up a 25-person position.
- the detection 22 method when stacking the detection 22 persons, an image analysis device is used for the specialist 28 persons, and then the specialist 2 8 persons are fixed by adhesion. You can.
- the conductor detections 25 of the semiconductor detection kit 2 can be arranged and set one after another by sequentially stacking the layers for detection. In this case, it is not necessary to provide the bolt 23a and the nut 23b shown in FIG.
- 00575 is a plan view of the semiconductor detector
- Fig. 6 is a semiconductor detector
- 2 is a plan view of No. 2 of FIG.
- the parts that correspond to the parts explained above are given the same symbols and explained.
- the semiconductor detector 445 is similar except that the base or reference for its spacer 446 differs from the spacers described above.
- a pair of 4's consisting of 2's of the pairs of spacers 4 and 4's of each other are formed.
- the 4 4 f of the 4 of the pair determines the X and orientation of the spacer, which is similar to the one in Figure 4 above, for semiconductor detection 25
- 006 0 is a pair of, even if it is a shift. This, 4 4 f, etc., for the X and orientation of the spacer.
- 006 27 is a third view of the semiconductor detector. Parts that correspond to the parts explained above are given the same symbols and explained.
- FIG. 3 is a diagram showing the position of the conductor detection unit shown in FIG. The parts that correspond to the parts explained above are given the same symbols and explained.
- the semiconductor detector 6 is
- the conductor detector 2 is configured as shown in 4 except that the shapes of and are different.
- the width of 64 is gradually narrowed toward the direction of radiation.
- the wiring 64 has a shape in which the outer side 64 is an extension of 68 of 68 of the spacers 68.
- the conductor detector 6 is arranged so that 64 of the wirings 64 are close to each other. Therefore, the conductor detection unit 6 can be arranged closer.
- the ratio of the gun wires that are not detected after passing between the semiconductor detections 25 can be reduced as compared with the conductor detection unit 2 shown in FIG. Therefore, the rate of P position can be increased.
- the P unit is described as an example, but it can be applied to the SP C (single-photon computer) unit.
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Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP06833931.6A EP1959274A4 (en) | 2005-12-08 | 2006-12-04 | RADIATION DETECTION UNIT AND RADIATION SENSING DEVICE |
US12/096,042 US8044361B2 (en) | 2005-12-08 | 2006-12-04 | Radiation detection unit and radiographic inspection apparatus |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005355134A JP4885529B2 (ja) | 2005-12-08 | 2005-12-08 | 放射線検出ユニットおよび放射線検査装置 |
JP2005-355134 | 2005-12-08 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2007066616A1 true WO2007066616A1 (ja) | 2007-06-14 |
Family
ID=38122762
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2006/324174 WO2007066616A1 (ja) | 2005-12-08 | 2006-12-04 | 放射線検出ユニットおよび放射線検査装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8044361B2 (ja) |
EP (1) | EP1959274A4 (ja) |
JP (1) | JP4885529B2 (ja) |
KR (1) | KR20080074957A (ja) |
CN (1) | CN101326449A (ja) |
WO (1) | WO2007066616A1 (ja) |
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CA2502986C (en) | 2002-10-25 | 2011-08-23 | Foamix Ltd. | Cosmetic and pharmaceutical foam |
US7575739B2 (en) | 2003-04-28 | 2009-08-18 | Foamix Ltd. | Foamable iodine composition |
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- 2005-12-08 JP JP2005355134A patent/JP4885529B2/ja not_active Expired - Fee Related
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2006
- 2006-12-04 WO PCT/JP2006/324174 patent/WO2007066616A1/ja active Application Filing
- 2006-12-04 US US12/096,042 patent/US8044361B2/en not_active Expired - Fee Related
- 2006-12-04 EP EP06833931.6A patent/EP1959274A4/en not_active Withdrawn
- 2006-12-04 KR KR1020087013559A patent/KR20080074957A/ko not_active Application Discontinuation
- 2006-12-04 CN CNA2006800459656A patent/CN101326449A/zh active Pending
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Publication number | Publication date |
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KR20080074957A (ko) | 2008-08-13 |
JP4885529B2 (ja) | 2012-02-29 |
EP1959274A4 (en) | 2016-10-05 |
EP1959274A1 (en) | 2008-08-20 |
CN101326449A (zh) | 2008-12-17 |
US8044361B2 (en) | 2011-10-25 |
US20090242778A1 (en) | 2009-10-01 |
JP2007155667A (ja) | 2007-06-21 |
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