WO2007032615A1 - Appareil de traitement au plasma et procédé utilisant des fréquences doubles - Google Patents

Appareil de traitement au plasma et procédé utilisant des fréquences doubles Download PDF

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Publication number
WO2007032615A1
WO2007032615A1 PCT/KR2006/003511 KR2006003511W WO2007032615A1 WO 2007032615 A1 WO2007032615 A1 WO 2007032615A1 KR 2006003511 W KR2006003511 W KR 2006003511W WO 2007032615 A1 WO2007032615 A1 WO 2007032615A1
Authority
WO
WIPO (PCT)
Prior art keywords
magazine
plasma treatment
electrode
power source
treatment apparatus
Prior art date
Application number
PCT/KR2006/003511
Other languages
English (en)
Inventor
Hae Ryong Lee
Keun Ho Lee
Duk Jae Kim
Jung Keun Oh
Ho Sang Kwon
Original Assignee
Psm Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Psm Inc. filed Critical Psm Inc.
Publication of WO2007032615A1 publication Critical patent/WO2007032615A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]

Definitions

  • the present invention relates to a plasma treatment apparatus and method using a dual frequency, and more specifically, to a plasma treatment apparatus and method for considerably improving the plasma treatment efficiency for a plurality of objects to be treated, which are received in a magazine, by concurrently using a plurality of powers of different frequencies from each other when cleaning or modifying surfaces of the objects using plasma.
  • a process for cleaning or modifying surfaces of the objects to be treated, such as a substrate, through a plasma treating method is also performed in order to improve the reliability of the wire bonding or the bonding reliability between mold resin and a substrate to be packaged.
  • a process for improving the adhesion between a semiconductor chip and a photo solder resist (PSR) film formed on a substrate by plasma treating the PSR film has been widely used in the semiconductor manufacturing process.
  • a conventional plasma treatment apparatus 1 includes a reaction chamber 2, a radio frequency (RF) electrode 4 and a ground electrode 6.
  • the reaction chamber 2 defines a space for inserting a magazine M inside a box-shaped frame 3, i.e., a space for a plasma treatment of a plurality of objects T to be treated which are received in the magazine M.
  • the RF electrode 4 is connected to an RF power source 5 for supplying power of a high frequency of 13.56 MHz in the outside of the reaction chamber 2, and supports the magazine M in the reaction chamber 2 while being in electrically contact with the magazine M.
  • the ground electrode 6 is disposed opposite to the RF electrode 4 to be spaced apart from the magazine M in the above portion thereof.
  • a reaction gas such as argon (Ar) gas is introduced in the reaction chamber 2 and then the power of a high frequency is applied thereto, plasma is generated between the RF electrode 4 and the ground electrode 6. Then, ions during the generation of the plasma may collide with the objects T in the magazine M to perform a surface treatment for the objects T.
  • a sheath region S is formed around the magazine M as shown in Fig. 2 (a).
  • Such a sheath region S is formed since the velocity difference between the ions and the electrons causes a negative direct current (DC) self bias to be induced around the magazine M.
  • DC direct current
  • an ion concentration phenomenon occurs as shown in Fig. 2 (b), so that there is a concern over the damage of the objects T in the magazine M due to the high energy impulse generated by the RF power. Disclosure of Invention Technical Problem
  • an object of the present invention is to provide a plasma treatment apparatus using a dual frequency capable of not only keeping an advantage that a plurality of objects to be treated are plasma treated at once using a magazine but also considerably improving the plasma treatment efficiency for the objects in the magazine without damage of the objects by using a dual frequency to control the inhomogeneous treatment of the objects caused by the ion concentration in a sheath region around the magazine and control the damage of the objects caused by high energy of RF power.
  • Another object of the present invention is to provide a plasma treatment method capable of considerably improving the plasma treatment efficiency for a plurality of objects to be treated which are received in a magazine using an electrode connected to an RF power source for inducing a DC self bias and another electrode connected to an MF power source for controlling ion concentration around the magazine, when the objects received in the magazine are plasma treated.
  • an apparatus for plasma treating a plurality of objects to be treated which are received in a magazine.
  • the plasma treatment apparatus comprises a reaction chamber hermetically closed with the magazine inserted therein; a first electrode disposed in the reaction chamber to be spaced apart from the magazine, the first electrode being connected to a radio frequency (RF) power source to induce a self bias; and a second electrode contacted with the magazine and connected to a power source of a lower frequency than that of the RF power source, thus defining a plasma generating region between the first and second electrodes, the second electrode serving to attract ions toward the magazine in a negative potential and to push away ions from the magazine in a positive potential.
  • RF radio frequency
  • the high frequency power from the RF power source is applied to the first electrode to induce the DC self bias while positive and negative potentials alternately applied to the second electrode causes the ion concentration to be controlled in the manner of attracting and pushing ions.
  • the ion diffusion ratio for the objects in the magazine may be improved, thereby improving the plasma treatment efficiency for the objects in the magazine.
  • the magazine be made of a conducting metal. Since the magazine is made of the conductive metal, the magazine itself is electrically integrated with the second electrode, which makes it possible to perform various plasma treatments for the objects received in the magazine.
  • the power source connected to the second electrode be a medium frequency (MF) power source having a frequency range of 30 to 3000 KHz, and it is more preferable that the RF power source have a frequency of 13.56 MHz and the MF power source has a frequency of 40 KHz.
  • MF medium frequency
  • the second electrode preferably includes a support horizontally provided to support a plurality of magazines, and a compartment portion vertically extending from the support to dividing adjacent magazines from each other.
  • the present invention discloses a plasma treatment method using a dual frequency, comprising the steps of receiving objects to be treated in a magazine having a plurality of layers in a multi-layered arrangement; positioning the magazine in a reaction chamber and then hermetically closing the reaction chamber; and applying power to first and second electrodes to plasma treat the objects in the magazine positioned between the first and second electrodes.
  • an alternating current (AC) power of an RF for inducing a direct current (DC) self-bias is applied to the first electrode
  • an AC power of an MF for controlling an ion concentration around the magazine is applied to the second electrode.
  • the plasma treatment for the objects is preferably a surface cleaning or a surface modifying. More preferably, the object to be treated includes a strip substrate on which a photo solder resist (PSR) film is formed.
  • PSR photo solder resist
  • a blocking phenomenon caused by ion concentration in a sheath region around a magazine and the damage of objects to be treated due to high energy of RF power are controlled through using a dual frequency, thereby improving the plasma treatment efficiency for the objects in the magazine without the critical damage therefor.
  • FIG. 1 is a schematic view of a conventional plasma treatment apparatus
  • FIG. 2 is a view illustrating a sheath phenomenon generated around a magazine when the plasma treatment apparatus shown in Fig. 1 is operated;
  • FIG. 3 is a schematic view of a plasma treatment apparatus according to an embodiment of the present invention.
  • FIG. 4 is a perspective view of the magazine used in the plasma treatment apparatus shown in Fig. 3 together with a plurality of objects to be treated, which are received in the magazine;
  • FIG. 5 is a schematic view illustrating a principle of the plasma treatment apparatus shown in Fig. 3.
  • Fig. 6 is a graph showing waveforms of RF and MF frequencies used in the embodiment of the present invention and a waveform of a dual frequency caused from the concurrent use of the RF and MF frequencies.
  • FIG. 3 schematically shows a plasma treatment apparatus according to the embodiment of the present invention.
  • the plasma treatment apparatus 100 includes a reaction chamber 12, a first electrode 20, a second electrode 30, and the like.
  • the reaction chamber 12 is compartmentally defined in a frame 10, which is composed of a main body and a door.
  • the frame 10 is formed with a gas inlet and a gas outlet, which are respectively connected to a reaction gas supply source and a vacuum pump via conduit lines. Magazines M in which a plurality of objects T to be treated are received in a multi-layered arrangement are inserted into the reaction chamber 12 as shown in Fig. 4. Surfaces of the objects T in the magazines M are cleaned or modified by a plasma treatment, which will be described below.
  • the object T is a strip substrate T having a photo solder resist (PSR) film formed thereon, and the plasma treatment for the objects is to enhance the adhesion between the PSR film and a semiconductor chip, but this is merely one embodiment.
  • the plasma treatment apparatus 100 according to the present invention may be used to perform a variety of plasma treatments such as cleaning or modifying a surface of various kinds of objects to be treated which are received in the magazine M.
  • the first and second electrodes 20 and 30 for generating plasma are provided in the reaction chamber 12.
  • the first electrode 20 is disposed in an upper inner portion of the reaction chamber 12 to be spaced apart by a predetermined distance from the magazines M, which are inserted into the reaction chamber 12.
  • the first electrode 20 is connected to an external radio frequency (RF) power source 40, so that alternating current (AC) power of a high frequency, most preferably AC power of a frequency of 13.56 MHz, may be supplied from the RF power source 40.
  • RF radio frequency
  • the second electrode 30 is connected to an external medium frequency (MF) power source 50, from which AC power of a frequency of about 30 to 3000 KHz, most preferably AC power of a frequency of 40 KHz, may be supplied, and is disposed in a lower inner portion of the reaction chamber 12 to be opposite to the first electrode 20.
  • MF medium frequency
  • the second electrode 30 supports the aforementioned magazines M, and more preferably, supports not only the magazines M but also is in electrical contact with the magazines M.
  • the induction of the negative DC self bias as described above allows a sheath region S shown as a dotted line in Fig. 5 (a) and (b) to occur around the magazine M on the second electrode 30, so that the ions concentrated in the sheath region S may prevent new ions from reaching the objects T in the magazine M- Meanwhile, the MF power (most preferably, the power of a frequency of 40 KHz) in which positive and negative potentials alternate is applied to the second electrode 30.
  • the magazine M is alternately charged with the positive and negative potentials, so that the alternation of the positive and negative potentials cause the ions around the magazine M in the reaction chamber 12 to be actively moved, thereby improving the plasma treatment efficiency for the objects T to be treated.
  • Fig. 5 (a) shows that the MF power applied to the second electrode 30 is in a period of positive potential.
  • the magazine M is charged with the positive potential, which serves to push the ions concentrated around the magazine M out of the magazine M.
  • the movement of the ions concentrated around the magazine M out of the magazine M as described above means that there is a state in which new ions may be diffused into the magazine M.
  • Fig 5 (b) shows that the MF power applied to the second electrode 30 is in a period of negative potential.
  • the magazine M is charged with the negative potential, which causes the magazine M to attract the ions toward the periphery thereof. Accordingly, new ions can be rapidly diffused into the magazine M, which means that the plasma treatment efficiency for the objects in the magazine M can be considerably improved.
  • the AC power which attracts and pushes the ions, is directly applied to the magazine M through the second electrode 30. This causes the acceleration of the ions to be increased, thereby contributing to improvement in the plasma treatment efficiency for the objects T.
  • FIG. 6 is a view illustrating a dual frequency used in the present invention, wherein
  • Fig. 6 (a) represents a frequency waveform of the RF power applied to the first electrode 20 (see Fig. 3)
  • Fig. 6 (b) represents a frequency waveform of the MF power applied to the second electrode 30 (see Fig. 3)
  • Fig. 6 (c) represents a waveform of the dual frequency which is composed of the RF and MF frequencies according to the present invention.
  • the RF power characteristic of the first electrode 20 causes a plasma density increasing effect to be exhibited
  • the MF power characteristic of the second electrode 30 causes an ion impulse increasing effect to be exhibited
  • an electron bounce off effect along the plasma direction is obtained.
  • Such effects improve the plasma treatment efficiency (the surface cleaning efficiency or the surface modifying efficiency) for the objects and control the generation of secondary electrons around the magazine M, thereby contributing to the prevention of the damage of the objects T.
  • the reaction chamber 12 is formed to have a size such that the plurality of magazines M transversely arranged may be received therein, wherein the second electrode 30 includes a support 32 horizontally provided to support the plurality of magazines M, and a plurality of compartment portions 34 vertically extending from the support 32 to dividing adjacent magazines M from each other. At this time, the compartment portion 34 is formed to have a height corresponding to the magazine M, thereby being capable of generally participating in the plasma treatment of the objects T positioned on respective floors of the magazine

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Plasma Technology (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

La présente invention concerne un appareil de traitement au plasma et un procédé utilisant des fréquences doubles. La présente invention concerne un appareil de traitement au plasma utilisant une fréquence double, dans lequel on contrôle un phénomène de blocage provoqué par une concentration ionique dans une région de gaine entourant un chargeur en utilisant une fréquence double pour augmenter un rapport de diffusion ionique dans le chargeur, améliorant ainsi considérablement l’efficacité du traitement au plasma pour les objets à traiter qui sont logés dans le chargeur. La présente invention concerne donc un appareil de traitement au plasma pour traiter au plasma une pluralité d'objets à traiter qui sont logés dans un chargeur. L’appareil de traitement au plasma selon la présente invention comprend une chambre de réaction fermée hermétiquement avec le chargeur introduit dans celle-ci ; une première électrode disposée dans la chambre de réaction à écarter du chargeur, la première électrode étant connectée à une source d’alimentation de fréquence radio (RF) permettant d’induire une polarisation automatique ; et une seconde électrode au contact du chargeur et connectée à une source d’alimentation d’une fréquence plus basse que celle de la source d’alimentation RF, définissant ainsi une région de production de plasma entre la première et la seconde électrodes, la seconde électrode servant à attirer les ions vers le chargeur en potentiel négatif et à écarter les ions du chargeur en potentiel positif.
PCT/KR2006/003511 2005-09-13 2006-09-05 Appareil de traitement au plasma et procédé utilisant des fréquences doubles WO2007032615A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2005-0085422 2005-09-13
KR1020050085422A KR100746698B1 (ko) 2005-09-13 2005-09-13 이중주파수를 이용한 플라즈마 처리장치 및 방법

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WO2007032615A1 true WO2007032615A1 (fr) 2007-03-22

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WO (1) WO2007032615A1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100869691B1 (ko) 2007-06-08 2008-11-21 전부일 플라즈마 세정장치
KR20210096782A (ko) 2020-01-29 2021-08-06 인제대학교 산학협력단 중주파 전원을 이용한 진공 플라즈마 처리장치
KR102328322B1 (ko) 2020-04-03 2021-11-19 인제대학교 산학협력단 대기압 중주파 플라즈마 처리장치
KR20210130033A (ko) 2020-04-21 2021-10-29 인제대학교 산학협력단 대기압 오존 플라즈마 발생장치

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1092599A (ja) * 1996-09-18 1998-04-10 Matsushita Electric Ind Co Ltd 表面処理装置及び表面処理方法
KR19980058581A (ko) * 1996-12-30 1998-10-07 황인길 반도체 장치용 플라즈마 세정기
JPH11297677A (ja) * 1998-04-10 1999-10-29 Samuko International Kenkyusho:Kk プラズマ表面処理装置
KR20010062069A (ko) * 1999-12-02 2001-07-07 니시히라 순지 스퍼터링 증착용 플라스마 처리 장치
KR20020053417A (ko) * 2000-12-27 2002-07-05 마이클 디. 오브라이언 반도체패키지용 매거진
KR20050054606A (ko) * 2003-12-05 2005-06-10 엘지.필립스 엘시디 주식회사 상압 플라즈마 처리 장치

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1092599A (ja) * 1996-09-18 1998-04-10 Matsushita Electric Ind Co Ltd 表面処理装置及び表面処理方法
KR19980058581A (ko) * 1996-12-30 1998-10-07 황인길 반도체 장치용 플라즈마 세정기
JPH11297677A (ja) * 1998-04-10 1999-10-29 Samuko International Kenkyusho:Kk プラズマ表面処理装置
KR20010062069A (ko) * 1999-12-02 2001-07-07 니시히라 순지 스퍼터링 증착용 플라스마 처리 장치
KR20020053417A (ko) * 2000-12-27 2002-07-05 마이클 디. 오브라이언 반도체패키지용 매거진
KR20050054606A (ko) * 2003-12-05 2005-06-10 엘지.필립스 엘시디 주식회사 상압 플라즈마 처리 장치

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KR20070030623A (ko) 2007-03-16
KR100746698B1 (ko) 2007-08-07

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