WO2007026605A1 - Procédé de formation d'un motif fin - Google Patents

Procédé de formation d'un motif fin Download PDF

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Publication number
WO2007026605A1
WO2007026605A1 PCT/JP2006/316682 JP2006316682W WO2007026605A1 WO 2007026605 A1 WO2007026605 A1 WO 2007026605A1 JP 2006316682 W JP2006316682 W JP 2006316682W WO 2007026605 A1 WO2007026605 A1 WO 2007026605A1
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WIPO (PCT)
Prior art keywords
fine pattern
patterning material
mold
patterning
fine
Prior art date
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PCT/JP2006/316682
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English (en)
Japanese (ja)
Inventor
Motoki Okinaka
Kazuhito Tsukagoshi
Yoshinobu Aoyagi
Original Assignee
Riken
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Filing date
Publication date
Application filed by Riken filed Critical Riken
Priority to US12/065,246 priority Critical patent/US20090039563A1/en
Priority to JP2007533209A priority patent/JP4795356B2/ja
Publication of WO2007026605A1 publication Critical patent/WO2007026605A1/fr

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
    • B81C1/00031—Regular or irregular arrays of nanoscale structures, e.g. etch mask layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
    • B81C1/00111—Tips, pillars, i.e. raised structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist
    • H01L21/3121—Layers comprising organo-silicon compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76817—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics using printing or stamping techniques
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0147—Film patterning
    • B81C2201/015—Imprinting
    • B81C2201/0152—Step and Flash imprinting, UV imprinting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0147—Film patterning
    • B81C2201/015—Imprinting
    • B81C2201/0153—Imprinting techniques not provided for in B81C2201/0152

Definitions

  • the present invention relates to a fine pattern forming method, and more particularly to a fine pattern forming method for forming a fine pattern having a fine concavo-convex structure on the order of nm on a patterning material.
  • nanoimprint technology has been known as a method for forming a fine pattern having a fine concavo-convex structure on the order of nm.
  • a mold with a fine pattern with a fine concavo-convex structure on the order of nm can be composed of, for example, a Si substrate, etc.) 100 and a substrate such as a Si substrate coated with a patterning material 102 formed of a resin material such as PMMA, which is an organic substance, as a patterning material 104 (Fig. 1 (a): Setup) and press the mold 100 against the patterning material 102 at a temperature of about 100 to 200 ° C and a pressure of about 1 to 10 MPa (Fig.
  • FIG. 1 (d) is an explanatory diagram showing a state in which a fine pattern having a fine concavo-convex structure on the order of nm formed on the mold 100 is observed with a scanning electron microscope
  • FIG. 1 (e) FIG. 5 is an explanatory diagram showing a state in which a fine pattern transferred to the patterning material 102 is observed with a scanning electron microscope.
  • the minimum dimension of the patterning currently reported is 5 nm.
  • nanoimprint technology is an excellent technology capable of processing in the nanometer order, for example, with a minimum dimension of 5 nm and 5 nm.
  • a patterning material with organic substance power that can easily transfer was used.
  • a patterning material having organic substance power has a low melting point and is soft, so it softens at a relatively low temperature of 60 to 150 ° C. and can easily transfer a fine pattern formed on a mold. It was.
  • inorganic substances have a high melting point and are hard at room temperature
  • it when forming a pattern that presses the mold and the patterning material to transfer the fine pattern of the mold to the patterning material, it must be performed at high temperature and pressure.
  • the processing time was long.
  • These high temperature and high pressure conditions are, for example, a temperature of about 200 to 590 ° C and a pressure of about 0.22 to about LOOMPa.
  • the processing time is about 60 seconds to 40 minutes.
  • the conventional method using the above-described conventional inorganic substance as a patterning material has a problem that it is difficult to realize a high aspect ratio structure due to the various problems described above.
  • the present invention has been made in view of the various problems of the conventional techniques as described above, and an object of the present invention is to press the mold and the patterning material into contact with the mold.
  • the mold fine pattern can be transferred to the patterning material at low temperature, low pressure, and in a short time, and the mold fine pattern was transferred to the patterning material.
  • the patterning material is water-absorbing, it will show excellent properties against chemical resistance, heat resistance and hardness, and the fine pattern formed on the patterning material will not be easily deformed.
  • the present invention intends to provide a method for forming such a fine pattern.
  • an object of the present invention is to provide a fine pattern forming method capable of realizing a high aspect ratio structure.
  • the present invention makes it possible to transfer a fine pattern of a mold to a patterning material at low temperature, low pressure and in a short time by using polysilane as a patterning material.
  • the patterning material is made glassy after the fine pattern of the mold is transferred to the patterning material. As a result, If the turning material absorbs water, it will have excellent chemical resistance, heat resistance and hardness, and the fine pattern formed on the patterning material will not be easily deformed.
  • a fine pattern of a mold can be transferred to a patterning material at a low temperature and a low pressure, as in the case of using a conventional organic substance such as PMMA as a patterning material.
  • the buttering material has a high water absorption resistance against chemical resistance, heat resistance and hardness. Therefore, the fine pattern formed on the patterning material can be easily deformed.
  • polysilane is a polymer whose main chain is composed only of silicon atoms, and is a material in which a Si—Si bond is changed to a Si—O—Si bond by irradiation with ultraviolet rays.
  • a mold on which a fine pattern having a fine concavo-convex structure is formed is pressed against a patterning material to form a fine pattern having a fine concavo-convex structure on the patterning material.
  • a first step of press-contacting a mold having a fine pattern having a fine concavo-convex structure and a patterning material having a polysilane force, and the mold and the patterning material A second step of irradiating the patterning material with ultraviolet light in a pressure contact state to photooxidize the patterning material, and releasing the pressure contact between the mold and the patterning material, A third step of extracting the mold from the substrate, and transferring the fine pattern in the patterning material from which the mold has been extracted by the third step.
  • oxygen flop plasma on the surface is obtained by a surface that is transferring the fine pattern in the pattern Jung material to have a fourth step of Sani spoon.
  • the present invention is the above-described invention, further comprising a fifth step of heating the patterning material irradiated with the oxygen plasma in the fourth step.
  • the present invention is the above-described invention, further comprising a step of heating the polysilane before performing the first step.
  • the mold is made of a material that transmits ultraviolet rays, and the irradiation of ultraviolet rays in the second step is performed on the patterning material from the mold side. It is what you do.
  • the present invention is the above-described invention, wherein the patterning material is disposed on a substrate, the substrate is made of a material that transmits ultraviolet rays, and the irradiation of ultraviolet rays in the second step is performed as described above.
  • the substrate side force is also applied to the patterning material.
  • the material that transmits ultraviolet rays is quartz glass.
  • a mold on which a fine pattern having a fine concavo-convex structure is formed is pressed against a patterning material, and a fine pattern having a fine concavo-convex structure is transferred to the patterning material.
  • the patterning material is irradiated with ultraviolet light to photooxidize the region of the patterning material except the interface region with the mold, and the pressure between the mold and the patterning material is released.
  • the present invention is the above-described invention, further comprising a sixth step of heating the patterning material irradiated with ultraviolet rays in the fifth step. .
  • the present invention is the above-described invention, further comprising a step of heating the polysilane before performing the first step.
  • the present invention is the above-described invention, wherein the patterning material is disposed on a substrate, the substrate is made of a material that transmits ultraviolet rays, and the irradiation of ultraviolet rays in the second step is performed as described above. The substrate side force is also applied to the patterning material.
  • the material that transmits ultraviolet rays is quartz glass.
  • the patterning material is polymethylphenylenosilane (PMPS).
  • the present invention is configured as described above, at the time of imprinting in which a pattern is formed by transferring a fine pattern of the mold onto the patterning material by press-contacting the mold and the patterning material, Imprinting can be performed at low temperature, low pressure and in a short time to transfer the fine pattern of the mold to the patterning material.
  • the patterning After the mold fine pattern is transferred to the patterning material, the patterning The material is made into a glassy state, and the water absorption is excellent in terms of chemical resistance, heat resistance and hardness, and the pattern formed on the patterning material is not easily deformed. Has an effect.
  • FIGS. 1 (a), (b), (c), (d), and (e) are explanatory diagrams showing a conventional nanoimprint lithography technique
  • FIG. 1 (a) shows a setup process.
  • (b) shows the pressing process
  • FIG. 1 (c) shows the release process
  • FIG. 1 (d) is an explanatory diagram showing a state in which a fine pattern of nm order formed on the mold is observed with a scanning electron microscope
  • FIG. 1 (e) is an explanatory diagram showing a state in which a fine pattern transferred to the patterning material is observed with a scanning electron microscope.
  • FIG. 2 is a conceptual configuration explanatory view showing an example of a nanoimprint apparatus used when carrying out the fine pattern forming method according to the first embodiment of the present invention.
  • FIG. 3 shows a processing procedure of the fine pattern forming method according to the first embodiment of the present invention. It is a flowchart to show.
  • FIGS. 4 (a), 4 (b), 4 (c), and 4 (d) are conceptual diagrams of steps in the processing procedure of the fine pattern forming method according to the first embodiment of the present invention.
  • a) shows the pre-beta process of the first step
  • FIG. 4 ( b ) shows the press process of the second step
  • FIG. 4 (c) shows the ultraviolet irradiation process of the third step
  • 4 (d) shows the release process of the fourth step.
  • FIGS. 5 (a) and 5 (b) are conceptual explanatory diagrams of steps in the processing procedure of the fine pattern forming method according to the example of the first embodiment of the present invention, and FIG. Fig. 5 (b) shows the post-bake process of the sixth step.
  • Fig. 6 is a graph showing the results of experiments by the inventor regarding the dependence of the post beta temperature on the height ratio.
  • the horizontal axis is the post-beta temperature (Bake temperature), and the vertical axis is the height. It is a ratio (Height ratio).
  • Fig. 7 is a graph showing the experimental results of the pressure welding of the inventor's mold and patterning material.
  • the horizontal axis is the temperature (Imprint temperature) during the pressure welding, and the vertical axis is the height ratio. (Height ratio).
  • FIG. 8 is a graph showing the results of an experiment on ultraviolet transparency conducted by the inventors of the present application, where the horizontal axis represents the wavelength (Wavelength) and the vertical axis represents the transmittance (Transmittance).
  • FIG. 9 is an explanatory view showing a state in which a fine pattern transferred to a patterning material is observed with a scanning electron microscope by the processing procedure of the fine pattern forming method according to the first embodiment of the present invention.
  • FIG. 10 is an explanatory diagram showing a state in which a fine pattern transferred to a patterning material is observed with a scanning electron microscope according to the processing procedure of the fine pattern forming method according to the first embodiment of the present invention. It is.
  • FIG. 11 is an explanatory diagram for explaining the state of photooxidation of polysilane which is a patterning material by irradiation with ultraviolet rays in the fine pattern forming method according to the present invention.
  • FIG. 12 illustrates a fine pattern forming method according to the second embodiment of the present invention. It is a conceptual composition explanatory view showing an example of a nanoimprint apparatus used in the case.
  • FIG. 13 is a flowchart showing a processing procedure of the fine pattern forming method according to the second embodiment of the present invention.
  • FIGS. 14 (a), (b), (c), and (d) are conceptual explanatory diagrams of steps in the processing procedure of the fine pattern forming method according to the second embodiment of the present invention.
  • Fig. 14 (b) shows the release process of the fourth step
  • Fig. 14 (c) shows the oxygen plasma irradiation process of the fifth step
  • FIG. 14 (d) shows the second ultraviolet irradiation process of the sixth step.
  • FIGS. 15 (a) and 15 (b) are explanatory views for explaining the state of photooxidation of polysilane as a patterning material by irradiation of ultraviolet rays in the fine pattern forming method according to the present invention.
  • FIG. 16 is an explanatory diagram of a fine pattern forming method according to a second embodiment of the present invention.
  • Figures 17 (a) and 17 (b) are graphs showing the results of experiments conducted by the inventor regarding chemical resistance change.
  • the horizontal axis represents the cleaning time and the vertical axis represents the height ratio.
  • Fig. 17 (a) shows the experimental results with the sample patterned according to the first embodiment, while Fig. 17 (b) shows the pattern according to the second embodiment. The experimental results using the Jung samples are shown.
  • FIG. 18 is an explanatory diagram showing a state in which a fine pattern transferred to a patterning material is observed with a scanning electron microscope by a processing procedure of a fine pattern forming method according to a second embodiment of the present invention. It is.
  • FIG. 19 (a) is an explanatory view showing a state in which a fine pattern of nm order formed on a mold is observed with a scanning electron microscope
  • FIG. 19 (b) is a second view of the present invention. It is explanatory drawing which shows the state which observed with the scanning electron microscope the fine pattern transcribe
  • FIG. 20 (a) is an explanatory view showing a state in which a fine pattern of nm order formed on a mold is observed with a scanning electron microscope
  • FIG. 20 (b) is a second view of the present invention.
  • the fine pattern transferred to the patterning material by the fine pattern formation method according to the embodiment It is explanatory drawing which shows the state observed by the scanning electron microscope.
  • FIG. 21 (a) is a graph showing an experimental result for obtaining the relationship between the beta temperature (Bake Temperature) and the Vickers hardness in the post-beta treatment performed by the present inventors.
  • FIG. 21 (b) is a graph showing the measurement results of the FT-IR measurement performed by the present inventor.
  • the first embodiment of the fine pattern forming method according to the present invention will be described.
  • the patterning material and the mold are used.
  • a nanoimprint apparatus 10 shown in FIG. 2 is used for the pressure contact.
  • the nanoimprint apparatus 10 includes a sample holder 12 so that a substrate 204 on which a patterning material 202 made of polysilane is formed can be placed on the sample holder 12. Has been made. Also sump The holder 12 includes a heater 12a.
  • a stepping motor 14 is attached to the mold 200 having a fine pattern with a fine concavo-convex structure on the lower surface, and by driving the stepping motor 14, the mold 200 is movable in the YZ direction. ing.
  • an ultra-high pressure mercury lamp 16 for irradiating the patterning material 202 with ultraviolet rays is disposed on the upper part of the mold 200.
  • the mold 200 is made of quartz glass that transmits ultraviolet rays irradiated by 16 ultrahigh pressure mercury lamps. Therefore, as will be described later, the ultraviolet light irradiated from the ultrahigh pressure mercury lamp 16 passes through the mold 200 made of quartz glass and is irradiated onto the patterning material 202.
  • FIG. As shown, a substrate 204 on which a patterning material 202 is formed is placed on the sample holder 12 of the nano-imprint apparatus 10.
  • polymethylphenyl silane which is polysilane
  • polymethylphenylsilane serving as the patterning material 202 on the surface of the substrate 204 for example, it may be formed by spin coating.
  • polysilane is a general term for polymers whose main chain is composed only of silicon atoms, and has various functional groups attached to the side chain.
  • the polymethylphenyl silane described above is It is one of lysan.
  • a substrate 204 on which the patterning material 202 placed on the sample holder 12 is formed is connected to a heater 12a.
  • a pre-beta treatment is performed by heating at a temperature of 120 ° C. for 5 minutes (see step S302 in FIG. 3 and FIG. 4 (a).) 0
  • this pre-beta treatment it is contained in the patterning material 202.
  • the solvent is volatilized and the substrate 204 and the patterning material 202 are integrated.
  • This pressure welding is performed at low temperature and low pressure for a short time, for example, temperature 80 ⁇ : L00 ° C, pressure 2 ⁇ 4MPa for 10 seconds. Do.
  • the ultrahigh pressure mercury lamp 16 is turned on while the mold 200 is kept in pressure contact with the patterning material 202. , upward force of the mold 200 also ultraviolet to a wavelength 365nm and main wavelength, for example, irradiation for five minutes (reference to FIG step S306 and FIG. 3 4 (c).) 0
  • the ultra-high pressure mercury lamp 16 The output is, for example, 250W.
  • the mold 200 is formed of quartz glass that is transparent to ultraviolet rays, the ultraviolet rays pass through the mold 200 and are irradiated onto the patterning material 202, and the patterning material 202 is photooxidized.
  • the patterning material 202 when the patterning material 202 is irradiated with ultraviolet rays, PMPS and oxygen which are components of the patterning material 202 are combined with each other, and Si—Si bonds are bonded to Si— in PMPS which is a component of the patterning material 202. O-Si bond changes, PMPS changes to siloxene compounds Visible.
  • the PMPS changes into a siloxene compound due to the bond between PMPS and oxygen, and the change in the glassy state causes the volume expansion of the patterning material 202, which may break the fine pattern. It is preferable that the mold 200 and the patterning material 202 are always kept in close contact with each other.
  • the entire patterning material 202 is photooxidized to be vitrified.
  • the stepping motor 14 is driven to pull the mold 200 straight up, and the mold 200 is removed from the patterning material 202. Pull out (see step S308 in Fig. 3 and Fig. 4 (d)).
  • the patterning material 202 is irradiated with oxygen plasma (O plasma).
  • O plasma oxygen plasma
  • the oxygen plasma irradiation conditions are, for example, a flow rate of 800 cc, a pressure of 10 Pa, an irradiation time of 1 minute, and an output of 400 W.
  • a patterning material with a fine pattern transferred by this oxygen plasma irradiation process is, for example, a flow rate of 800 cc, a pressure of 10 Pa, an irradiation time of 1 minute, and an output of 400 W.
  • the surface 202a of 202 can be hardened by acidification.
  • the patterning material 202 subjected to the above-described first to fifth steps is used as the heater 12a.
  • post-beta treatment is performed by heating at 350 ° C. for 5 minutes (see step S312 and FIG. 5 (b) in FIG. 3). It is completely vitrified by hot acid, mineralized and cured.
  • the patterning material 202 formed with a fine pattern by being pressed against the mold 200 at a low temperature and low pressure by a series of steps including the first to sixth steps described above is photooxidized by irradiation with ultraviolet rays. After being vitrified, the surface is oxidized by irradiation with oxygen plasma to make it hard, and by heating it, it is completely vitrified and mineralized by thermal acid. become.
  • the process of transferring the fine pattern of the mold 200 to the patterning material 202 uses a conventional organic substance such as PMMA. In the same way as in the case of the process, the process can be performed at a low temperature and a low pressure.
  • the patterning material 202 is vitrified and mineralized. Therefore, the water absorption exhibits excellent characteristics with respect to chemical resistance, heat resistance and hardness, and the fine pattern formed on the patterning material 202 is not easily deformed.
  • the water absorption is excellent in chemical resistance, heat resistance and hardness at a low temperature, low pressure and in a short time, and there is no fear of deformation of the fine pattern.
  • Jung material 202 can be formed.
  • the chemical resistance can be remarkably improved by performing the post-beta treatment process as the sixth step. That is, most of the patterning material 202 becomes glassy due to the irradiation of ultraviolet rays in the ultraviolet irradiation treatment process, which is the pre-process of the post-beta treatment process. Compared with the patterning material 202 in the polysilane state, the chemical resistance is remarkably improved, but it is slightly dissolved in acetone.
  • the patterning material 202 having a fine pattern formed by the series of steps including the first to sixth steps described above has been confirmed to have a heat resistance of up to 5 minutes at 350 ° C.
  • FIG. 6 is a graph showing the results of an experiment on the height ratio dependence of the post beta temperature by the inventors of the present application.
  • the temperature (Bake temperature) is taken and the vertical axis is the height ratio.
  • the height ratio was the ratio of the height of the fine pattern to the mold.
  • the duration of post beta (Duration time) was 5 minutes (5 min.).
  • a patterning material that has not been subjected to the ultraviolet irradiation treatment process and the oxygen plasma irradiation treatment process that is, a patterning material in a polysilane state (hereinafter referred to as “untreated polysilane state patterning material”). .) Is a post beta above 150 ° C and the height ratio is 0, that is, the fine pattern disappeared.
  • the patterning material (hereinafter referred to as “the patterned material treated according to the present invention”) subjected to the ultraviolet irradiation treatment step and the oxygen plasma irradiation treatment step by the fine pattern forming method according to the present invention is referred to as a post-beta temperature.
  • the fine pattern shape could be completely maintained up to 250 ° C.
  • the post-beta temperature was 350 ° C for 5 minutes, a very small shrinkage of 5% was observed, but the fine pattern shape was maintained.
  • the fine pattern formed on the patterning material treated according to the present invention had very high V and heat resistance. It is considered that this post-beta treatment leaves a thermal history in the patterning film and can withstand heat treatment up to that temperature.
  • this post-beta treatment leaves a thermal history in the patterning film and can withstand heat treatment up to that temperature.
  • the patterning material obtained by subjecting the processed patterning material of the present invention to postbeta treatment (hereinafter referred to as “postbetaned patterning material”) emits light having a wavelength of up to 300 nm. It was confirmed that light was transmitted at 70% or more, and light with a wavelength up to 350 nm was transmitted at 90% or more. In other words, it is transparent and visible in the visible region.
  • the fine pattern forming method of the present invention it is possible to form a pattern having a high aspect ratio structure.
  • a scanning electron microscope presented as FIG. As shown in the explanatory diagram showing the observed state, according to the patterning material 202 in which the fine pattern is formed by the series of processes consisting of the above first to sixth steps, a high aspect ratio of 3.5 is realized. We were able to.
  • the imprint has a size, shape, and density dependency on the patterning, and this varies greatly depending on the imprinting conditions of the fluidity force of the patterning material. Depending on the size, shape, and density of the ring, it may or may not be completely patternable.
  • the line-and-space pattern having a size different by two orders of magnitude from 250 nm to 25 ⁇ m is obtained under the above-mentioned conditions of 80 ° C., 2 MPa, 10 seconds, low temperature, low pressure, and short time. (See Fig. 10).
  • the fine pattern formation method according to the present invention enables patterning of photonic crystals and the like, and the size of 25 m is the flow path of the biochip. Therefore, according to the fine pattern forming method of the present invention, it is possible to pattern the flow path of the biochip.
  • one condition is applied to polysilane. Depending on the situation, it is possible to pattern various devices.
  • the fine pattern forming method of the present invention it is possible to form a pattern smaller than 250 nm and larger than 25 ⁇ m.
  • the fine pattern forming method according to the present invention as shown in Fig. 11, after thermal imprinting of polysilane at a low temperature, a low pressure and in a short time (processing in step S304), The polysilane is crosslinked and cured by irradiation (treatment of step S306).
  • the pattern formed by the mold 200 may be easily broken.
  • ultraviolet rays are irradiated while the mold 200 is pressed into the patterning material 202 made of polysilane, and the neighboring polysilane chains are photoacidified. It is cross-linked by ⁇ and hardened into glass.
  • the ultrahigh pressure mercury lamp 16 is disposed above the nanoimprint apparatus 10, but the ultrahigh pressure mercury lamp 16 irradiates the patterning material 202 with ultraviolet rays. Therefore, the location of the ultra-high pressure mercury lamp 16 is limited as long as the ultra-high pressure mercury lamp 16 is disposed at any position where the patterning material 202 can be irradiated with ultraviolet rays. It is not a thing.
  • the mold 200 is formed of quartz glass so that the ultraviolet light is transmitted through the mold 200 and irradiated to the patterning material 202.
  • the substrate 204 on which the patterning material 202 is formed is made of a material that transmits ultraviolet rays such as quartz glass.
  • the patterning material 202 may be irradiated through 4.
  • the patterning material 202 is irradiated with ultraviolet light having a wavelength of 365 nm as a main wavelength. What is necessary is just to select suitably in the range of 400 nm. This is the same energy that is necessary to break the Si-Si ⁇ bond.
  • the glassy state of the patterning material 202 in the above-described ultraviolet irradiation treatment step depends on a function of the film thickness of the patterning material 202 and the irradiation time of the ultraviolet ray, the patterning material 202 is changed into the glassy state.
  • an appropriate value of the film thickness of the patterning material 202 and the irradiation time of the ultraviolet light may be selected by evaluating peak determination by FT-IR, refractive index change, and the like. According to the experiment of the present inventor, when the film thickness of the patterning material 202 made of polymethylfuran silane is about 2 m, it is irradiated with ultraviolet rays having a wavelength of 300 to 4 OOnm for 3 to 5 minutes. The entire film of the patterning material 202 could be vitrified.
  • the fine pattern forming method according to the second embodiment of the present invention is different from the above-described first embodiment in the following points.
  • ultraviolet rays are irradiated from the mold 200 side so that the ultraviolet rays pass through the mold 200 and are irradiated on the patterning material 202.
  • the substrate 204 on which the patterning material 202 is formed is made of SiO.
  • the pattern material 202 is irradiated with the ultraviolet rays from the substrate 204 side so that the ultraviolet rays pass through the substrate 204 and irradiate the patterning material 202.
  • the entire Jung material 202 was photoacidified to form a glass.
  • the entire patterning material 202 is made to be glassy by photooxidation by one ultraviolet irradiation.
  • the first irradiation of irradiating the patterning material 202 with ultraviolet rays from the substrate 204 side and the second irradiation of irradiating the patterning material 202 with ultraviolet rays from the mold 200 side are performed.
  • UV irradiation was performed twice.
  • the interface between the mold 200 and the patterning material 202 made of polysilane is not fixed V, so that the vicinity of the interface
  • the photo-oxidation of the patterning material 202 is performed under the conditions that leave the polysilane region.
  • the glassy shape of the patterning material 202 depends on a function of the film thickness of the patterning material 202 and the irradiation time of ultraviolet rays.
  • the film of the patterning material 202 is evaluated by evaluating the peak judgment by FT-IR, the refractive index change, etc. Appropriate values for thickness and UV irradiation time should be selected.
  • the adhesion between the mold 200 and the patterning material 202 is suppressed, and the mold 200 and the patterning material 202 are kept from being separated.
  • the mold 200 can be easily released from the molding material 202.
  • a second ultraviolet irradiation was performed from the mold 200 side so as to photooxidize the polysilane region remaining in the patterning material 202, and The entire material 202 is photoacidified to achieve an overall glassy appearance.
  • a patterning material is used.
  • a nanoimprint apparatus 10 ′ shown in FIG. 12 is used to press the mold and the mold.
  • the nanoimprint apparatus 10 includes a nanoimprint apparatus shown in FIG. 2 in that an ultrahigh pressure mercury lamp 16 ′ for irradiating the patterning material 202 with ultraviolet rays is disposed below the sample holder 12. Different from 10.
  • the sample holder 12 and the heater 12a are appropriately arranged so that the lower cover of the sample holder 12 can also irradiate the patterning material 202 with ultraviolet rays. It is assumed that the substrate 204 is made of SiO that transmits ultraviolet rays.
  • the pre-beta processing step (step S1302) as the first step is the same processing as the pre-beta processing step (step S302 and FIG. 4 (a)) in the first embodiment, and the second step. Since the pressing process (step S1304) is the same process as the pressing process (step S304 and FIG. 4B) in the first embodiment, detailed description thereof is omitted.
  • step S1304 the first ultraviolet irradiation process step as the third step of the fine pattern forming method according to the present invention is performed.
  • the ultrahigh pressure mercury lamp 16 ′ is turned on, and ultraviolet light having a wavelength of 365 nm as a main wavelength is irradiated from the lower side of the substrate 204 (step S).
  • step S the ultrahigh pressure mercury lamp 16 '
  • the output of the ultra high pressure mercury lamp 16 ' is, for example, 250W.
  • the sample holder 12 and the heater 12a are appropriately arranged so that the lower force of the sample holder 12 can also irradiate the patterning material 202 with ultraviolet rays, and the substrate 204 transmits ultraviolet rays. Because it is composed of SiO,
  • the ultraviolet light passes through the substrate 204 and is irradiated to the patterning material 202, and the patterning material 202 is photooxidized.
  • the glassy material caused by the photoacid accompanying the irradiation of the patterning material 202 with ultraviolet rays is the same as in the case of the first embodiment described above, and the description thereof is omitted.
  • the patterning material 202 is irradiated under the condition that the polysilane region remains in the vicinity of the interface so that the interface between the mold 200 and the patterning material 202 made of polysilane does not adhere. Do acid.
  • the patterning material 202 is irradiated with ultraviolet rays
  • the ultra-high pressure mercury lamp 16 is first turned on and the mold 200 side is also irradiated with ultraviolet rays
  • the photooxidation of the patterning material 202 proceeds from the mold 200 side. Therefore, when the mold 200 is made of SiO, which is the same kind of material as the patterning material 202, the patterning material 202 and the mold 200
  • the ultrahigh pressure mercury lamp 16 ′ is first turned on and the side force of the substrate 204 is also irradiated with ultraviolet rays.
  • the polysilane region was left in the vicinity of the interface so that the interface between 200 and the patterning material 202 made of polysilane did not stick (see FIG. 15 (b)). That is, in the first ultraviolet irradiation process, the irradiation time and power are controlled so that the entire surface of the mold 200 and the patterning material 202 made of polysilicon is not photooxidized. To do. As a result, the mold 200 and the patterning material 202 made of polysilane and the interface remain as polysilane. The mold release becomes easy.
  • step S1306 when the first ultraviolet irradiation process step (step S1306) as the third step is completed, the release process step (see step S1308 and Fig. 14 (b)) as the fourth step is performed.
  • step S1308 when the release process step (step S1308) as the fourth step is completed, the process proceeds to the oxygen plasma irradiation process step (see step S1310 and FIG. 14 (c)) as the fifth step.
  • the release process step (step S1308), which is the fourth step, is the same process as the release process step (step S308 and FIG. 4 (d)) in the first embodiment.
  • the oxygen plasma irradiation process (step S 1310), which is the same step, is the same process as the oxygen plasma irradiation process (step S310 and FIG. 5 (a)) in the first embodiment, a detailed description is given respectively. Omitted.
  • step S1310 when the oxygen plasma irradiation treatment process (step S1310), which is the fifth step, is completed, the second ultraviolet irradiation treatment process, which is the sixth step of the fine pattern forming method according to the present invention, is performed.
  • the high-pressure mercury lamp 16 is turned on, and the patterning material 202 from which the mold 200 has been released is irradiated with ultraviolet light having a wavelength of 365 nm as a main wavelength from the side on which the pattern is formed by the mold 200 (step S1312 and FIG. (Refer to 14 (d).) 0
  • the output of the ultra high pressure mercury lamp 16 is, for example, 250 W.
  • the first ultraviolet irradiation treatment step is photooxidized! /, But the polysilane region of the patterning material 202 is photooxidized, so that the entire glassy material of the patterning material 202 is vitrified. Do the trap.
  • step S1312 when the second ultraviolet irradiation process (step S1312), which is the sixth step, is completed, the process proceeds to a post-beta process (step S1314), which is the seventh step.
  • the post-beta treatment process (step S 1314), which is the seventh step, is the same process as the post-beta treatment process (step S312 and FIG. 5 (b)) in the first embodiment.
  • the detailed explanation is omitted. That is, in the second embodiment, only in the first ultraviolet irradiation process (step S 1306), a polysilane region remains on the patterning material 202, that is, in the region where the pattern is formed. It will be. This reduces mechanical strength and chemical resistance.
  • the oxygen plasma irradiation treatment process (Step S1310), the second ultraviolet irradiation treatment process (Step S1312), and post-beta treatment Perform the mineralization process of the process (Step S 1314) to make it glassy including the areas that were not photo-oxidized in the first UV irradiation process (Step S 130 6) (see Fig. 16). ).
  • the photo-oxidation by the second ultraviolet irradiation treatment process (Step S 1312) and the thermal acid by the post-beta treatment process (Step S 1314) are performed.
  • Two types of go In order to suppress the dullness of the pattern due to these ultraviolet irradiation and post-beta, before the second ultraviolet irradiation treatment process (step S 1312), the oxygen plasma irradiation treatment process (step S 1310) The surface is oxidized to form a hard film. Thereafter, the polysilane region is photo-oxidized by the second ultraviolet irradiation treatment step, and then the crosslinking is further advanced and cured by post-beta treatment.
  • Figs. 17 (a) and 17 (b) are graphs showing the experimental results regarding the above-mentioned chemical resistance change
  • Fig. 17 (a) shows the experimental results with the sample patterned according to the first embodiment.
  • FIG. 17 (b) shows the experimental results with the sample patterned according to the second embodiment.
  • the horizontal axis represents the cleaning time
  • the samples put into the pattern according to the second embodiment used in the experiment were not subjected to post-beta treatment (“untreated” in FIG. 17 (b)), and samples subjected to post-beta treatment at 50 ° C. (50 ° C in Fig. 17 (b)), post-beta treatment at 100 ° C (100 ° C in 017 (b)), and post-beta treatment at 150 ° C This was done (“150 ° C” in Fig. 17 (b)) and post-beta treatment at 200 ° C (“200 ° C” in Fig. 17 (b)).
  • both the sample patterned according to the first embodiment and the sample patterned according to the second embodiment are untreated, that is, the region where the pattern is formed is the polysilane region. In all cases, the pattern disappeared completely after 10 seconds of ultrasonic cleaning.
  • the entire pattern was vitrified by thermal oxidation, so that the post-beta treatment was performed at 350 ° C. Beta was needed.
  • the second embodiment it has sufficient chemical resistance even at a beta of 200 ° C.
  • the second embodiment it is possible to simultaneously use a material that dislikes heat treatment (for example, an organic material), and since there is no thermal shrinkage of polysilane at a temperature of 200 ° C. There is no need to consider heat shrinkage.
  • a material that dislikes heat treatment for example, an organic material
  • the entire polysilane was oxidized by the thermal acid of post-beta treatment, a beta of 350 ° C was required, and finally a pattern of about 5% was obtained. Shrinkage occurred.
  • the entire pattern is vitrified by photo-oxidation of UV irradiation, so that 200 patterns of mold shapes can be maintained in acetone even in low-temperature post-beta treatment at 200 ° C. We were able to.
  • the fine pattern forming method according to the second embodiment of the present invention as shown in the explanatory view showing the state observed with the scanning electron microscope presented as FIG. In the sample implemented at 80 ° C, 2 MPa, 10 seconds, low temperature, low pressure, and short time, the same 50 nm L & S (Line & Space) was achieved.
  • the aspect ratio is about 2.
  • a pattern of 50 nm can be patterned under conditions of low temperature, low pressure, and short time of 80 ° C., 2 MPa, 10 seconds, for example. It is.
  • a structure with a nanometer order force of 50 nm to 25 m can be produced. Therefore, if a mold can be prepared, it is possible to pattern a structure of 50 nm or less, and furthermore, a structure having a remarkably different size of 50 nm to 25 m or a structure with a high aspect ratio can be put together. It is possible. It is to be noted that collective transfer of such patterns with extremely different sizes and high aspect ratio structures can be realized by the fine pattern forming method of the present invention using polysilane, which is impossible with ordinary glass materials.
  • a pattern could be formed on the patterning material 202 even when the temperature condition of 80 ° C. was changed to room temperature under the conditions of 80 ° C., 2 MPa, and 10 seconds described above. .
  • FIG. 19 (a) and FIG. 20 (a) show the mold 200
  • FIG. 19 (b) and FIG. 20 (b) show the patterning material 202 imprinted by the mold 200.
  • 1 9 (a) The air hole structure shown in (b) is almost completely patterned.
  • the L & S (Line & Space) pattern shown in Fig. 20 (a) and (b) may be incomplete, and the pattern accuracy is the shape of the structure. Since it depends on the shape and size, it is necessary to set conditions depending on the application.
  • imprinting can be performed at room temperature as described above, so that heating / cooling is unnecessary, and thus the process can be shortened. What used to be 1 minute can be reduced to half that of 30 seconds.
  • the fine pattern forming method of the second embodiment of the present invention as shown in FIG. 21 (a), as the beta temperature (Bake Temperature) rises in the post-beta treatment, Improved hardness (Vickers hardness).
  • the Vickers hardness when post-beta treatment at 450 ° C is 300 HV
  • the picker hardness of low-melting glass is 350 HV, so that it can be as hard as low-melting glass. It was.
  • PMMA has a Vickers hardness of 100 HV, a Vickers hardness of about 3 times that of PMMA can be obtained.
  • a harder material may be obtained by a beta of 450 ° C or higher.
  • the patterning material 202 is irradiated with ultraviolet light having a wavelength of 365 nm as a main wavelength. What is necessary is just to select suitably in the range of 400 nm. This is the same energy that is necessary to break the Si-Si ⁇ bond. Further, the glassy state of the patterning material 202 in the above-described ultraviolet irradiation treatment process is a function of the film thickness of the patterning material 202 and the irradiation time of the ultraviolet ray, and the patterning material 202 can be completely vitrified.
  • the film thickness of the patterning material 202 By evaluating FT-IR peak determination, refractive index change, and the like, it is possible to select appropriate values for the film thickness of the patterning material 202 and the ultraviolet irradiation time. According to the experiments of the present inventor, when the film thickness of the patterning material 202 made of polymethylphenol silane is about 2 m in thickness, by irradiating ultraviolet rays with a wavelength of 300 to 40 Onm for 3 to 5 minutes, The entire film of the patterning material 202 could be vitrified.
  • the force used to arrange the ultra-high pressure mercury lamp 16 'at the lower part of the sample holder is not limited to this, and a single ultra-high pressure mercury lamp is movably arranged so that the patterning material 202 can be irradiated with ultraviolet rays from a desired direction.
  • a single ultra-high pressure mercury lamp is movably arranged so that the patterning material 202 can be irradiated with ultraviolet rays from a desired direction.
  • the first embodiment and the second embodiment described above can be modified as shown in the following (1) to (7).
  • a series of steps from the pre-beta treatment process to the post-beta treatment process is performed to reduce defects in the fine pattern and to achieve heat resistance.
  • this is not limited to this, and depending on the application, both the pre-beta treatment process and the post-bake treatment process may not be performed. Alternatively, either the pre-beta treatment process or the post-beta treatment process may not be performed.
  • the patterning material 202 is irradiated with ultraviolet rays, and the patterning material is subjected to photooxidation.
  • the entire 202 is made into a glassy state, and the patterning material 202 is irradiated with oxygen plasma to oxidize the surface and harden to obtain an inorganicized patterning material 202. wear.
  • the side force of the substrate 204 is also applied to the patterning material 202 as the first ultraviolet irradiation. Irradiation is performed to leave the region near the interface between the patterning material 202 and the mold 200, and the patterning material 202 is made into a glassy state with a photoacid, and oxygen is further added to the patterning material 202.
  • the inorganic patterning material 202 can be obtained by irradiating with the second ultraviolet ray for the purpose of making it glassy.
  • the force of using polymethylmethylsilane as a patterning material is not limited to this.
  • polysilanes such as CF 3 can also be used as the patterning material.
  • the force that forms the mold 200 with quartz glass that transmits ultraviolet light The material that forms the mold 200 is not limited to quartz glass. Other materials can be used as long as they transmit ultraviolet light.
  • the substrate 204 is made of a material that transmits ultraviolet light, such as quartz glass
  • the mold 200 is made of a material that does not transmit ultraviolet light.
  • the force described in the case of forming a fine pattern on the patterning material 202 formed on the substrate 204 is not limited to this. Needless to say, the present invention can be used to form a fine pattern on various patterning materials in various fields.
  • the power using an ultrahigh pressure mercury lamp as a light source for irradiating ultraviolet rays is not limited to this.
  • a high pressure mercury lamp, a low pressure mercury lamp, or a deep-UV lamp can be used as a light source that generates ultraviolet light.
  • the present invention can be used to fabricate elements that require durability and a high aspect ratio structure.
  • optical devices such as photonic crystals, flow path formation such as nanochips, storage devices, and nanoimprinting It can be used to form fine patterns when manufacturing molds, microlenses, or displays.

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Abstract

La présente invention concerne un procédé de formation d'un motif fin dans lequel, lors de la formation d'un motif, un motif fin formé dans un moule peut être transféré à un matériau de formation de motif dans un bref lapse de temps à une basse température et basse pression et, suite au transfert du motif fin au matériau de formation de motif, le motif fin formé dans le matériau de formation de motif ne se déforme pas facilement. Le procédé de formation de motif fin comprend : une première phase dans laquelle un moule ayant une structure fine avec des renfoncements/saillies est pressé contre un matériau de formation de motif comprenant un polysilane ; une deuxième phase dans laquelle le matériau de formation de motif est irradié par rayonnement ultraviolet afin de photo-oxyder le matériau de formation de motif ; une troisième phase dans laquelle la pression du moule contre le matériau de formation de motif est diminuée et le moule est retiré du matériau de formation de motif ; et une quatrième phase dans laquelle la surface du matériau de formation de motif à laquelle le motif fin a été transféré est irradiée avec un plasma d'oxygène afin d'oxyder la surface.
PCT/JP2006/316682 2005-08-30 2006-08-25 Procédé de formation d'un motif fin WO2007026605A1 (fr)

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