WO2007013540A1 - Procédé de fabrication d’ébauche de masque et procédé de fabrication de masque d’exposition - Google Patents

Procédé de fabrication d’ébauche de masque et procédé de fabrication de masque d’exposition Download PDF

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Publication number
WO2007013540A1
WO2007013540A1 PCT/JP2006/314832 JP2006314832W WO2007013540A1 WO 2007013540 A1 WO2007013540 A1 WO 2007013540A1 JP 2006314832 W JP2006314832 W JP 2006314832W WO 2007013540 A1 WO2007013540 A1 WO 2007013540A1
Authority
WO
WIPO (PCT)
Prior art keywords
resist
substrate
resist solution
dropped
mask
Prior art date
Application number
PCT/JP2006/314832
Other languages
English (en)
Japanese (ja)
Inventor
Masahiro Hashimoto
Toru Fukui
Takao Higuchi
Hiroshi Shiratori
Original Assignee
Hoya Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corporation filed Critical Hoya Corporation
Publication of WO2007013540A1 publication Critical patent/WO2007013540A1/fr

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/76—Patterning of masks by imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking

Definitions

  • the present invention relates to a method for manufacturing a mask blank having a resist coating process in which a resist solution is uniformly spin-coated on a rectangular substrate and a resist film is formed with reduced in-plane variation in resist sensitivity, and
  • This mask blank force It is related with the manufacturing method of the mask for exposure which manufactures the mask for exposure, Specifically, It is related with the manufacturing method of the mask blank for semiconductor device manufacture, and the manufacturing method of the exposure mask for semiconductor device manufacture.
  • the resist spin coating method described in Patent Document 2 attempts to reduce coating unevenness by dropping the coating solution so that the coating solution draws an annular locus on the surface of the object to be coated.
  • the line width dimension (CD: Critical Dimen- sion) of the pattern line in the mask pattern of the exposure mask is the target of interest.
  • the “in-plane CD variation”, which varies in-plane with respect to the line width dimension (CD) of the line, is 5. lnm for the line and space pattern and 3.6 nm for the isolated line pattern. This is becoming difficult to achieve with exposure mask manufacturing technology.
  • the object of the present invention has been made in consideration of the above-mentioned circumstances, and suppresses in-plane CD variation in the mask pattern of the exposure mask based on the sensitivity difference between the vicinity of the center and the periphery of the mask blank.
  • a mask blank manufacturing method capable of realizing an exposure mask capable of meeting a request for pattern miniaturization of a transfer target, for example, a request for adapting to a half pitch 65 nm node in a semiconductor device, and the mask
  • An object of the present invention is to provide a method of manufacturing an exposure mask that uses a blank to manufacture an exposure mask. Means for solving the problem
  • the resist solution when the resist solution is dropped on the substrate surface by the nozzle means, the distance from the center of rotation of the substrate below the resist droplet, The resist solution is dropped in the shape of a slant by adjusting the relative movement speed of the substrate and the nozzle.
  • a mask blank manufacturing method that works on the fifth means is a mask blank manufacturing method including a resist coating process in which a resist solution is formed on a rectangular substrate to form a resist film, and the resist coating process includes: A dropping step of spreading a resist solution on the surface of the substrate, a dropping step; a uniforming step of uniformly spreading the dropped resist solution over the entire surface of the substrate to form a resist film having a uniform thickness; A drying process for drying the resist film formed to a desired film thickness.
  • the resist liquid is applied to the substrate when a predetermined amount or more of the resist liquid capable of obtaining the required film thickness is dropped by the nozzle force.
  • the distance from the substrate rotation center at the position below the resist droplet and the number of rotations of the substrate are adjusted in the following range so that the sensitivity of the resist is suppressed compared to other positions at the position where it is dropped on the surface. And on It is characterized in that dropped on the surface of the substrate by dispersing Les resist solution.
  • the distance from the center of rotation of the substrate below the resist droplet is 1 cm or more and 5 cm or less.
  • the rotation speed of the plate shall be 0.5 rpm or more and 50 rpm or less.
  • a method for manufacturing a mask blank that works on the sixth means is characterized in that, in the fourth or fifth means, the resist solution is dropped onto the substrate surface in the form of a slanting ball.
  • the method for producing a mask blank that works on the seventh means is that the dropping step includes a step of applying a resist solution of a predetermined amount or more that can obtain a required film thickness from the nozzle to the substrate. When dripping onto the surface, the dripping position is changed.
  • the mask blank manufacturing method that works on the eighth means is that the dropping of the resist solution is performed while rotating the substrate or around the center of the surface of the substrate.
  • the resist solution is dropped at a position eccentric to the center of the substrate surface while moving the nozzle.
  • the resist solution is dropped by using the resist solution dropped on the surface of the substrate as the center of the surface. It is characterized by including the process of extending to a maximum.
  • a method for manufacturing a mask blank that works on the tenth means includes the step of spreading the resist liquid to the center of the surface of the substrate in addition to the dropping of the resist liquid in the ninth means. After the completion of the dropping of the resist liquid force, the resist liquid force is a step of waiting until it spreads to the center of the surface.
  • the method for producing a mask blank that works on the eleventh means includes a nozzle that drops a resist solution during the rotation of the substrate, and the center of the surface. The center force on the surface of the substrate on a straight line passing through is moved to an eccentric position.
  • the dripping step in the method of manufacturing the mask blank, which acts on the twelfth means is a straight line passing through the center of the surface through a nozzle for dropping the resist solution while the substrate is rotating.
  • the eccentric positional force of the surface of the substrate is moved toward the center of the surface of the substrate.
  • a method for manufacturing a mask blank that is applied to the thirteenth means is the method according to the eleventh means, wherein the dropping step is performed at a position where the center of the surface of the substrate or the central force is decentered during the rotation of the substrate.
  • the nozzle for dropping the resist solution on the device is moved outward on a straight line passing through the center of the surface.
  • a mask blank manufacturing method which is effective for the fourteenth means is characterized in that, in any of the first to thirteenth means, the resist blank is made of the chemically amplified resist.
  • the substrate is a substrate with a thin film in which a thin film serving as a mask pattern is formed on the substrate. It is characterized by this.
  • the thin film is made of a material force containing chromium.
  • a method for manufacturing an exposure mask that is applied to the seventeenth means patterns a resist film of the mask blank manufactured by the mask blank manufacturing method according to any one of the first to sixteenth means. Then, a resist pattern is formed, and a mask pattern is formed using this resist pattern as a mask to manufacture an exposure mask.
  • the resist liquid is applied to an exposure mask provided with a mask pattern formed using the resist pattern formed by exposure and development processing on the resist film of the mask blank produced by the above manufacturing method as a mask.
  • the line width dimension (CD) of the pattern line of the mask pattern varies in the plane due to variations in the sensitivity of the resist film at the dropping position of the film and its vicinity and other positions. It can suppress “in-plane CD variation”. As a result, it is possible to realize an exposure mask that can meet the demand for pattern miniaturization of a transfer target (for example, generation after a half pitch 65 nm node in a semiconductor device).
  • the dropping position force of a predetermined amount or more of the resist solution that can obtain the required film thickness is changed on the surface of the substrate. Can be dispersed and dropped onto the substrate surface, so that the resist liquid can be prevented from being dropped on the substrate surface, and in-plane CD variation in the mask pattern of the exposure mask can be suppressed.
  • the dropping step force includes the step of spreading the resist solution dropped onto the surface of the substrate to the center of the surface, so that in the homogenizing step of rotating the substrate, The resist solution can be spread uniformly over the entire surface of the substrate, and a resist film with good in-plane film thickness uniformity can be formed.
  • the central force on the surface of the substrate is dropped on the straight line passing through the center of the surface during rotation of the substrate. Since it is moved, the resist solution dripped onto the surface of the substrate can be spread quickly to the center of this surface, and the resist solution dripped onto the surface of the substrate can be spread quickly and uniformly outward of the substrate surface. be able to.
  • a nozzle for dropping the resist solution at a position eccentric from the center of the surface of the substrate during rotation of the substrate is applied on a straight line passing through the center of the surface. Since the substrate is moved in the central direction, the resist solution dropped on the surface of the substrate can be quickly spread to the center of the surface.
  • the chemically amplified resist has a low viscosity and is easily dried, but even with this chemically amplified resist, the resist solution dripping traces are formed on the surface of the substrate.
  • Generation, chemical amplification at the position below and near the resist droplet, and other positions It is possible to suppress concentration of components constituting the resist solution affecting the resist sensitivity of the mold resist at the dropping position. Therefore, in-plane CD variation in the mask pattern of the exposure mask due to variation in sensitivity of the resist film in the mask blank can be suppressed.
  • FIG. 1 is a side sectional view showing a spin coating apparatus for performing a resist coating process in an embodiment of a mask blank manufacturing method according to the present invention.
  • FIG. 4 (A) is a cross-sectional view showing a mask blank manufactured as shown in FIG.
  • FIG. 4B is a cross-sectional view showing an exposure mask in which the mask blank force of FIG. 4A is also manufactured.
  • the thin film 14 also changes optically with respect to exposure light (eg, ArF excimer laser). Specifically, a light-shielding film that shields exposure light and a phase shift film that changes the phase of exposure light (this phase shift film also includes a black-tone film having a light-shielding function and a phase shift function) Included).
  • exposure light eg, ArF excimer laser
  • a light-shielding film that shields exposure light and a phase shift film that changes the phase of exposure light (this phase shift film also includes a black-tone film having a light-shielding function and a phase shift function) Included).
  • the thin film 14 is not limited to a single layer and may be laminated.
  • the laminated film of the thin film 14 for example, a laminated film of a light shielding film or a laminated film in which a phase shift film and a light shielding film are laminated may be used.
  • the mask blank 10 is a transmissive mask blank or a reflective mask blank.
  • a transmissive mask blank a translucent substrate was used as the substrate 11, and a mask blank having a light shielding film formed as the thin film 14 and a phase shift film (including a halftone film) formed as the thin film 14 were formed.
  • Phase shift mask blank In the case of a reflective mask blank, a substrate having a low thermal expansion coefficient is used as the substrate 11, and the mask blank 10 has a light reflecting multilayer film and a light absorber film serving as a mask pattern sequentially on the substrate 11. It is formed. These light reflecting multilayer film and light absorber film are the thin film 14.
  • the above-mentioned constituent materials are included in the mask blank surface. Due to the in-plane variation, the effect of the present invention is most obtained in a resist material in which in-plane CD variation is likely to occur.
  • the number of rotations when the thin film-coated substrate 15 is rotated is set by appropriately adjusting the force such as the final discharge amount and discharge speed of the resist solution 26 and the dropping position of the resist solution 26.
  • the dropping position of the resist solution 26 is preferably such that the distance (eccentric position Q) from the substrate rotation center 0 at the position below the resist droplet is 1 cm or more and 5 cm or less.
  • the pattern line of the mask pattern 13 can be prevented. It is possible to suppress the “in-plane CD variation” in which the line width dimension (CD) of 28 (Fig. 4 (B)) varies within the plane with respect to the target target line width dimension (CD). As a result, it is possible to realize an exposure mask 18 that can meet the demand for pattern miniaturization of a transfer target (for example, a half pitch 65 nm node in a semiconductor device).
  • a resist solution was spin-coated by a resist coating process to form a resist film on the surface of the thin film.
  • Each condition in the resist coating process is as follows.
  • the line width dimension of this mask pattern which is 13 X 13 in the exposure mask plane, is measured with the SEM, and the line width dimension (CD) of the pattern line in the mask pattern of the exposure mask is “In-plane CD variation”, which varies within the plane of the mask, was measured.
  • in-plane CD variation of 4 nm was achieved at 3 ⁇ , which is a demand for next-generation semiconductor device pattern miniaturization (norf pitch 65 nm node) 5. lnm (in the case of line and space no-turn) ) was satisfied.
  • the in-plane CD variation (3 ⁇ ) of the obtained exposure mask was 2 nm.
  • This in-plane CD variation (3 ⁇ ) of 2 nm was able to satisfy 3.6 nm (in the case of an isolated line pattern), which is a request for pattern miniaturization of semiconductor devices in the next generation (node pitch 65 nm node). This is thought to be due to the fact that the polymer, PAG, and Quencher's constituent materials that make up the chemically amplified resist are uniformly contained in the mask blank surface.
  • the in-plane CD variation (3 ⁇ ) of the exposure mask produced with this mask blank force was 6.8 nm.
  • This in-plane CD variation (3 ⁇ ) 6.8 nm does not satisfy the demand for next-generation semiconductor device pattern miniaturization (norf pitch 65 nm node) 5. lnm (in the case of a line-and-space pattern). It ’s nasty.
  • the polymer, PAG, and quencher constituent materials that make up the chemically amplified resist with a high resist solution pressure on the substrate under the resist droplets are not evenly contained in the mask blank surface and vary. Having one of these is considered to be one factor.
  • a mask blank was produced in the same manner as in Example 1 except that the resist dropping position was set to 1 cm (Example 3) and 5 cm (Example 4) from the center of the surface of the substrate with the thin film. This mask blank force exposure mask was produced.
  • the average film thickness and in-plane film thickness uniformity of the resist film in the obtained mask blank were almost the same as those in Example 1.
  • the in-plane CD variation (3 ⁇ ) of the exposure mask produced with this mask blank force was 5 nm (Example 3) and 4.7 nm (Example 4). This in-plane CD variation (3 ⁇ ) satisfied 5.
  • lnm in the case of a line and space pattern, which is a demand for pattern miniaturization of semiconductor devices in the next generation (a node pitch of 65 nm).
  • Example 4 the number of rotations of the substrate at the time of dropping the resist was 0.5 rpm (Example 5), and in Example 3 above, the number of rotations of the substrate at the time of dropping the resist was 50 rpm (Example 6).
  • a mask blank was produced in the same manner as in Examples 3 and 4, and an exposure mask was produced with this mask blank force.
  • the in-plane CD variation (3 ⁇ ) of the exposure mask produced with this mask blank force was 4.8 nm (Example 5) and 5 nm (Example 6). This in-plane CD variation (3 ⁇ ) satisfied 5. lnm (in the case of a line and space pattern), which is a demand for pattern miniaturization of semiconductor devices in the next generation (a node pitch of 65 nm).
  • FIG. 5 is a plan view showing a state of the resist solution dripping on the substrate surface in the dropping step in the mask blank manufacturing method according to the present invention, in which (A) shows the resist solution at the start of the dropping of the resist solution.
  • FIG. 5B is a plan view showing a dropping state and a dropping trajectory of the resist solution, and
  • FIG. 5B is a plan view showing a dropping state of the resist solution at the time when the resist liquid is dropped after the completion of dropping.
  • (C) is a plan view showing a state in which a resist pool is formed in the vicinity of the center of the substrate after the resist solution has been dropped onto the substrate surface.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

Il est possible d’éliminer les irrégularités présentes sur un CD dans un plan et ce, dans un motif de masque d’exposition s’appuyant sur la différence de sensibilité présente entre la portion centrale et la portion périphérique d’une ébauche de masque, afin de correspondre, par exemple, à un nœud d’un demi-pas de 65 nm dans un dispositif à semi-conducteur. Lorsqu’un liquide de réserve tombe goutte-à-goutte d’une buse sur une surface de substrat, une distance du centre de rotation du substrat où le liquide de réserve est tombé et le nombre de tours par minute du substrat sont ajustés dans la plage suivante de manière à supprimer la croissance de la sensibilité de réserve à une position où le liquide de réserve est tombé sur la surface du substrat par comparaison aux autres positions. Le liquide de réserve qui est tombé est étalé afin d’obtenir une flaque de réserve sur la portion centrale du substrat. La flaque de réserve est étalée sur la portion périphérique de la surface du substrat par une force centrifuge, puis elle est séchée afin de former un film de réserve.
PCT/JP2006/314832 2005-07-28 2006-07-27 Procédé de fabrication d’ébauche de masque et procédé de fabrication de masque d’exposition WO2007013540A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2005-219081 2005-07-28
JP2005219081 2005-07-28
JP2006-204000 2006-07-26
JP2006204000A JP2007058200A (ja) 2005-07-28 2006-07-26 マスクブランクの製造方法及び露光用マスクの製造方法

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WO2007013540A1 true WO2007013540A1 (fr) 2007-02-01

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JP (1) JP2007058200A (fr)
KR (1) KR20080034004A (fr)
TW (1) TW200710561A (fr)
WO (1) WO2007013540A1 (fr)

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JP5332249B2 (ja) * 2007-06-05 2013-11-06 旭硝子株式会社 ガラス基板の研磨方法
JP4748192B2 (ja) * 2008-08-07 2011-08-17 東京エレクトロン株式会社 塗布装置、塗布方法、塗布、現像装置及び記憶媒体
JP5327238B2 (ja) * 2011-01-20 2013-10-30 東京エレクトロン株式会社 塗布処理装置、塗布処理方法及び記憶媒体
JP5682521B2 (ja) 2011-09-14 2015-03-11 東京エレクトロン株式会社 周縁部塗布装置、周縁部塗布方法及び記憶媒体
KR102239197B1 (ko) * 2012-09-13 2021-04-09 호야 가부시키가이샤 마스크 블랭크의 제조 방법 및 전사용 마스크의 제조 방법
KR102167485B1 (ko) * 2012-09-13 2020-10-19 호야 가부시키가이샤 마스크 블랭크의 제조 방법 및 전사용 마스크의 제조 방법
KR102298087B1 (ko) * 2013-07-26 2021-09-02 세메스 주식회사 감광액을 도포하는 방법
JP6318012B2 (ja) * 2014-06-04 2018-04-25 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法
JP5931230B1 (ja) * 2015-01-15 2016-06-08 東京エレクトロン株式会社 液処理方法、液処理装置、及び記録媒体。
WO2017195549A1 (fr) * 2016-05-13 2017-11-16 東京エレクトロン株式会社 Dispositif de formation de film de revêtement, procédé de formation de film de revêtement, et support de stockage
KR102414893B1 (ko) * 2016-12-02 2022-06-30 도쿄엘렉트론가부시키가이샤 기판 처리 장치, 기판 처리 방법 및 기억 매체
CN111505906B (zh) * 2020-06-10 2023-09-05 沈阳芯源微电子设备股份有限公司 涂胶方法

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JP2007058200A (ja) 2007-03-08
KR20080034004A (ko) 2008-04-17

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