TW200710561A - Mask blank fabrication method and exposure mask fabrication method - Google Patents

Mask blank fabrication method and exposure mask fabrication method

Info

Publication number
TW200710561A
TW200710561A TW095127675A TW95127675A TW200710561A TW 200710561 A TW200710561 A TW 200710561A TW 095127675 A TW095127675 A TW 095127675A TW 95127675 A TW95127675 A TW 95127675A TW 200710561 A TW200710561 A TW 200710561A
Authority
TW
Taiwan
Prior art keywords
resist
fabrication method
dropped
substrate
mask
Prior art date
Application number
TW095127675A
Other languages
Chinese (zh)
Inventor
Masahiro Hashimoto
Toru Fukui
Takao Higuchi
Hiroshi Shiratori
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of TW200710561A publication Critical patent/TW200710561A/en

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16Coating processes; Apparatus therefor
    • G03F7/162Coating on a rotating support, e.g. using a whirler or a spinner

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

It is possible to suppress CD irregularities in a plane in a mask pattern of an exposure mask based on sensitivity difference between the center portion and the peripheral portion of a mask blank, so as to match, for example, a half pitch 65 nm node in a semiconductor device. When resist liquid is dropped from a nozzle onto a substrate surface, a distance of substrate rotation center where the resist liquid has dropped and the rpm of the substrate are adjusted in the following range so as to suppress resist sensitivity increase at the position where the resist liquid has dropped on the substrate surface as compared to the other positions. The resist liquid which has dropped is spread to form a resist pool at the substrate central portion. The resist pool is spread to the peripheral portion of the substrate surface by centrifugal force and then dried to form a resist film.
TW095127675A 2005-07-28 2006-07-28 Mask blank fabrication method and exposure mask fabrication method TW200710561A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005219081 2005-07-28
JP2006204000A JP2007058200A (en) 2005-07-28 2006-07-26 Mask blank manufacturing method and exposure mask manufacturing method

Publications (1)

Publication Number Publication Date
TW200710561A true TW200710561A (en) 2007-03-16

Family

ID=37683431

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095127675A TW200710561A (en) 2005-07-28 2006-07-28 Mask blank fabrication method and exposure mask fabrication method

Country Status (4)

Country Link
JP (1) JP2007058200A (en)
KR (1) KR20080034004A (en)
TW (1) TW200710561A (en)
WO (1) WO2007013540A1 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI619143B (en) * 2012-09-13 2018-03-21 Hoya Corp Manufacturing method of mask base and manufacturing method of transfer mask (2)
TWI624308B (en) * 2015-01-15 2018-05-21 東京威力科創股份有限公司 Liquid processing method, liquid processing apparatus and recording medium
CN111505906A (en) * 2020-06-10 2020-08-07 沈阳芯源微电子设备股份有限公司 Gluing method

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JP5332249B2 (en) * 2007-06-05 2013-11-06 旭硝子株式会社 Glass substrate polishing method
JP4748192B2 (en) * 2008-08-07 2011-08-17 東京エレクトロン株式会社 Coating device, coating method, coating, developing device and storage medium
JP5327238B2 (en) * 2011-01-20 2013-10-30 東京エレクトロン株式会社 Coating processing apparatus, coating processing method, and storage medium
JP5682521B2 (en) 2011-09-14 2015-03-11 東京エレクトロン株式会社 Perimeter coating apparatus, peripheral coating method, and storage medium
KR102239197B1 (en) * 2012-09-13 2021-04-09 호야 가부시키가이샤 Method for manufacturing mask blank and method for manufacturing transfer mask
KR102298087B1 (en) * 2013-07-26 2021-09-02 세메스 주식회사 Method for coating photo-resist
JP6318012B2 (en) * 2014-06-04 2018-04-25 株式会社Screenホールディングス Substrate processing method
JPWO2017195549A1 (en) * 2016-05-13 2019-03-07 東京エレクトロン株式会社 Coating film forming apparatus, coating film forming method, and storage medium
KR102414893B1 (en) * 2016-12-02 2022-06-30 도쿄엘렉트론가부시키가이샤 Substrate processing apparatus, substrate processing method and recording medium

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JPS57130570A (en) * 1981-02-04 1982-08-13 Hitachi Ltd Spinner coating method and apparatus
JPS59109273A (en) * 1982-12-15 1984-06-23 Matsushita Electric Ind Co Ltd Nozzle for rotary coater
JPS61244029A (en) * 1985-04-22 1986-10-30 Toshiba Mach Co Ltd Prevention of uneven spin coating and spin coater
JPH0521306A (en) * 1991-07-11 1993-01-29 Canon Sales Co Inc Method and device for applying resist to substrate
JPH05259049A (en) * 1992-03-10 1993-10-08 Kawasaki Steel Corp Spin coating on semiconductor substrate
JP3337150B2 (en) * 1993-01-20 2002-10-21 シャープ株式会社 Spin type coating equipment
JPH0780387A (en) * 1993-09-14 1995-03-28 Nordson Kk Spin coating method for liquid and device therefor
JPH07335532A (en) * 1994-06-13 1995-12-22 Fujitsu Ltd Method for spin coating of resin
JPH09319094A (en) * 1996-05-27 1997-12-12 Mitsubishi Electric Corp Spin coating method and spin coating device
JP4022282B2 (en) * 1997-04-07 2007-12-12 大日本スクリーン製造株式会社 Coating device
US6191053B1 (en) * 1997-06-16 2001-02-20 Silicon Valley Group, Inc. High efficiency photoresist coating
JPH11207250A (en) * 1998-01-23 1999-08-03 Tokyo Electron Ltd Film forming method
JP3338804B2 (en) * 1999-08-31 2002-10-28 秋田日本電気株式会社 Resist coating apparatus and method
JP4353626B2 (en) * 2000-11-21 2009-10-28 東京エレクトロン株式会社 Coating method and coating apparatus
JP2005021803A (en) * 2003-07-02 2005-01-27 Fuji Electric Device Technology Co Ltd Method for rotary coating and method for manufacturing semiconductor device using it
JP2006108433A (en) * 2004-10-06 2006-04-20 Sharp Corp Manufacturing method of semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI619143B (en) * 2012-09-13 2018-03-21 Hoya Corp Manufacturing method of mask base and manufacturing method of transfer mask (2)
TWI624308B (en) * 2015-01-15 2018-05-21 東京威力科創股份有限公司 Liquid processing method, liquid processing apparatus and recording medium
CN111505906A (en) * 2020-06-10 2020-08-07 沈阳芯源微电子设备股份有限公司 Gluing method
CN111505906B (en) * 2020-06-10 2023-09-05 沈阳芯源微电子设备股份有限公司 Gluing method

Also Published As

Publication number Publication date
KR20080034004A (en) 2008-04-17
WO2007013540A1 (en) 2007-02-01
JP2007058200A (en) 2007-03-08

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