WO2006093168A1 - Dispositif cvd, procede de formation d’un film a couches multiples l’utilisant et film a couches multiples ainsi forme - Google Patents

Dispositif cvd, procede de formation d’un film a couches multiples l’utilisant et film a couches multiples ainsi forme Download PDF

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Publication number
WO2006093168A1
WO2006093168A1 PCT/JP2006/303798 JP2006303798W WO2006093168A1 WO 2006093168 A1 WO2006093168 A1 WO 2006093168A1 JP 2006303798 W JP2006303798 W JP 2006303798W WO 2006093168 A1 WO2006093168 A1 WO 2006093168A1
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Prior art keywords
cvd
film
forming
roller
carrier gas
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PCT/JP2006/303798
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English (en)
Japanese (ja)
Inventor
Hisayoshi Yamoto
Shinichi Koshimae
Yuji Honda
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Youtec Co., Ltd.
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Publication date
Application filed by Youtec Co., Ltd. filed Critical Youtec Co., Ltd.
Priority to JP2007505971A priority Critical patent/JPWO2006093168A1/ja
Priority to TW095107160A priority patent/TW200641180A/zh
Publication of WO2006093168A1 publication Critical patent/WO2006093168A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates

Definitions

  • the present invention relates to a CVD apparatus, a multilayer film forming method using the same, and a multilayer film formed using the same.
  • Holographic recording and playback technology which is said to be the ultimate optical memory, is, for example, NIKKEI EL
  • a wavelength selective film is indispensable for the recording / reproducing medium of the holographic recording / reproducing technology, and the wavelength selective film includes, for example, a silicon oxide film SiO and a niobium oxide film Nb.
  • the film has generally been formed by vapor deposition or sputtering.
  • Non-Patent Document 1 NIKKEI ELECTRONICS 2005. 1. 17 “Holographic Media Near Takeoff Realized 200 GB in 2006” pages 105-114
  • the film is formed at a high vacuum and at a low deposition temperature, so that an oxygen thin film having insufficient physical properties and different physical properties is formed compared to the stoichiometry. Is There is a tendency that a characteristic as designed easily cannot be obtained.
  • the deposition rate is remarkably lower than that by the CVD method, so that there is a tendency that the productivity is low and it is difficult to reduce the production cost.
  • the recording / reproducing medium requires various films in addition to the wavelength selection film, and only for forming the wavelength selection film, a silicon oxide film, a niobium oxide film, or a tantalum oxide. It is necessary to laminate films alternately, and the number of lamination processes is 5 to 1 000 times (for example, 20 times).
  • a silicon oxide film is formed, next, for example, a niobium oxide film is formed, then a silicon oxide film is formed, and then a niobium oxide film is formed. This is because it takes time S to switch the thin film to be formed.
  • a film forming apparatus is switched every time the film to be formed is changed, such as forming a silicon oxide film with one CVD apparatus and forming a niobium oxide film with another CVD apparatus, it takes time for each switching. A great waste of money is generated.
  • the present invention has been made to solve such a problem, solves all of the above-mentioned problems caused by the vapor deposition method and the sputtering method.
  • An object of the present invention is to provide a CVD apparatus that can be efficiently formed without any waste, and a multilayer film forming method using the CVD apparatus.
  • the CVD apparatus of claim 1 is provided with a path from the first scraping roller to the second scraping roller through the plurality of film forming rollers in one chamber.
  • a direction in which the film tape is scraped from the first scraping roller through the plurality of film forming rollers to the second scraping opening (hereinafter, this direction is referred to as “positive direction” for convenience).
  • the direction from which the second scraping roller passes through the plurality of film forming rollers to the first scraping roller hereinafter, this direction is referred to as “reverse direction” for convenience).
  • a CVD section for forming a CVD film on the film forming tape on the film forming roller corresponding to each of the plurality of film forming rollers.
  • Each CVD unit has its own CVD film type, other CVD condition settings, and film formation operations. Control of the stop It is characterized in that each can be done individually.
  • the CVD apparatus according to claim 2 is the CVD apparatus according to claim 1, wherein each of the CVD units forms a plasma by applying an RF voltage on a film forming roller, and can form a CVD film by plasma CVD.
  • a discharge preventing conductor for covering the film forming tape is provided in front of and in front of the film forming roller.
  • the CVD apparatus according to claim 3 is the CVD apparatus according to claim 2, wherein the discharge preventing conductor covers the film-forming tape with a gap within 1 Omm from both surfaces of the film-forming tape. To do.
  • the CVD apparatus according to claim 4 is the CVD apparatus according to claims 1 to 3, wherein a liquid compound or a solid compound having a boiling point of approximately 25 ° C or higher is vaporized corresponding to each of the CVD sections, and the CVD apparatus.
  • the vaporization part which supplies as a CVD film forming gas to the part is provided.
  • the CVD apparatus is the CVD apparatus according to claims 1 to 3, wherein the carrier gas pipe to which each CVD unit force carrier gas is supplied, and the carrier gas is supplied from the carrier gas pipe, A carrier gas flow path including an orifice tube that supplies the raw material solution in the form of fine particles or mist in the carrier gas and supplies the vaporized part to the vaporizing part, and the vaporizing part is a raw material dispersed in the carrier gas.
  • a heating means for heating and evaporating the solution is provided.
  • a multilayer film forming method is a multilayer film forming method using the CVD apparatus according to any one of claims 1 to 5, wherein the film forming tape is removed from the first scraping roller.
  • a CVD film is formed in some CVD parts and other CVD parts while running in the direction reaching the second scraping roller through the plurality of film forming rollers or in the opposite direction. It is characterized by forming a multilayer film in which a plurality of CVD films are laminated by performing an operation of forming the film.
  • a multilayer film forming method according to claim 7 is the multilayer film forming method according to claim 6, wherein the first CVD film is formed in one CVD portion and the second CVD portion is formed in the remaining CVD portion. And forming a multilayer film in which the first CVD film and the second CVD film are alternately laminated while the film-forming tape is traveling in the forward direction or the backward direction. It is characterized by.
  • the CVD apparatus includes a first scraping roller and one component in one chamber.
  • a tape traveling path is provided through the film roller to the second scraping roller, and one film-forming tape passes through the tape traveling path from the first scraping roller through the film forming roller. Travels in the direction of being scraped off by the second scraping roller, and conversely, it is scraped off from the second scraping roller through the film forming roller to the first scraping roller.
  • the CVD apparatus according to claim 9 is similar to the CVD apparatus according to claim 8, and the CVD unit forms plasma by applying an RF voltage on the film forming roller, and forms a CVD film by plasma CVD.
  • a discharge preventing conductor covering the film forming tape is provided in the vicinity of the film forming roller and in front of and above the film forming roller.
  • the CVD apparatus according to claim 10 is the CVD apparatus according to claim 9, wherein the discharge preventing conductor covers the film-forming tape with a gap within 10 mm from both surfaces of the film-forming tape.
  • the CVD apparatus according to claim 11 is the CVD apparatus according to claims 8 to 10:
  • the CVD apparatus according to claim 8 vaporizes a liquid compound or a solid compound having a boiling point of approximately 25 ° C or higher in correspondence with the CVD section, and the CVD apparatus.
  • the vaporization part which supplies as a CVD film forming gas to the part is provided.
  • the CVD apparatus according to claim 12 is the CVD apparatus according to claims 8 to 10: a carrier gas pipe to which the CVD unit force carrier gas is supplied, and the carrier gas is supplied from the carrier gas pipe.
  • a heating means for heating and evaporating the solution is provided.
  • a multilayer film forming method is the multilayer film forming method using the CVD apparatus according to any one of the eighth to twelfth aspects, wherein the film forming tape is removed from the first winding roller.
  • the film forming tape is removed from the first winding roller.
  • the film-forming tape travels in the direction of being scraped from the first scraping roller through the film-forming roller to the second scraping roller, and vice versa.
  • the film is moved from the take-up roller through the film-forming roller to the direction of being picked up by the first pick-up roller, and corresponding to each of a plurality of different areas on the film-forming roller.
  • a CVD unit for forming a CVD film on the film-deposited tape on the area is provided, and each of the CVD units sets the type of CVD film, other CVD conditions, and controls the film formation operation and its stop.
  • They are characterized in that they can be made individually.
  • the CVD apparatus according to claim 15 is the CVD apparatus according to claim 14, wherein a liquid compound or a solid compound having a boiling point of approximately 25 ° C or more is vaporized in the CVD section corresponding to each CVD section.
  • a vaporizing section for supplying a CVD film forming gas is provided.
  • the CVD apparatus according to claim 16 is the CVD apparatus according to claim 14, wherein the CVD unit is supplied with a carrier gas pipe to which a carrier gas is supplied, and the carrier gas is supplied from the carrier gas pipe.
  • a carrier gas flow path comprising an orifice tube that is dispersed in a carrier gas in the form of fine particles or mist and is supplied to the vaporization section, and the vaporization section is a raw material solution dispersed in the carrier gas. It is characterized by comprising a heating means for vaporizing by heating.
  • a multilayer film forming method is the multilayer film forming method using the CVD apparatus according to claims 14 to 16, wherein the film-forming tape is transferred from the first scraping roller to the plurality of the plurality of film forming tapes. Performing an operation to form a CVD film in some CVD parts and other CVD parts while running in the direction from the film forming roller to the second scraping roller or in the opposite direction. To form a multilayer film in which a plurality of CVD films are stacked.
  • the multilayer film forming method according to claim 18 is the multilayer film forming method according to claim 17, wherein the first CVD film is formed in every other CVD part and the second CVD film is formed in the remaining CVD part. And forming a multilayer film in which the first CVD film and the second CVD film are alternately laminated while the film-forming tape is traveling in the forward direction or the backward direction.
  • the multilayer film of claim 19 is formed by laminating a plurality of CVD films formed on a film-forming tape by the multilayer film-forming method of claim 6, 7, 13, 17 or 18. It is a special number to have a special structure.
  • a plurality of CVD units are set to form different CVD films, and the film forming tape is caused to run in a certain direction or vice versa.
  • the film forming tape is caused to run in a certain direction or vice versa.
  • the multilayer film can be formed very efficiently without time waste.
  • each of the C VD units forms plasma by applying an RF voltage on the film forming roller, and plasma CVD is used. Therefore, the required CVD film can be formed even at a lower CVD processing temperature.
  • the discharge preventing conductor is a film-forming tape at a gap within 1 Omm from both surfaces of the film-forming tape. Therefore, it is possible to more reliably prevent the formation of a denatured film by reliably preventing the formation of the plasma even on the portion of the film-deposited tape that is not located on the film-forming roller. Can do.
  • a solid or liquid compound having a low vapor pressure is vaporized and supplied to the CVD unit as a CVD film forming gas. Since the vaporization section is provided, the formation of a CVD film using a solid or liquid compound having a low vapor pressure and a low vapor pressure as a material can be put to practical use.
  • a niobium oxide film NbOx (for example, Nb 2 O 3) has a low vapor pressure in spite of having excellent advantages such as a low risk of Nb compound as a material in a normal CVD method. Due to the nature, film formation was difficult.
  • a vaporizer corresponding to the CVD unit vaporizing a solid or liquid compound having a low vapor pressure in the vaporizer, and supplying the vaporized gas to the CVD unit.
  • the formation of a CVD film using a low-pressure solid or liquid compound as a material can be put into practical use, and a niobium oxide film NbOx (for example, Nb 2 O 3) can be easily formed.
  • the raw material solution is instantaneously atomized by a high-speed carrier gas flow so that the raw material solution can be easily vaporized by the heat of the heating means.
  • a raw material solution obtained by dissolving a raw material compound that is difficult to vaporize in a solvent can be easily vaporized in the vaporization section.
  • a CVD film made of a solid or liquid compound having a low vapor pressure can be formed.
  • a part of the CVD unit is different from another CVD unit while the film-forming tape is moved in the forward direction or in the opposite direction. Since the operation of forming a CVD film is performed, it is possible to form a multilayer film in which a plurality of different CVD films are stacked.
  • the first CVD film is formed in every other CVD portion, and the second CVD film is formed in the remaining CVD portions, and the deposition target is formed. Since the film tape runs in the forward direction or in the reverse direction, a multilayer film in which the first CVD film and the second CVD film are alternately laminated can be formed.
  • any CVD film can be formed by depositing the CVD portion while running the film-forming tape in a certain direction or in the opposite direction.
  • a multilayer film having an arbitrary structure can be formed.
  • the plurality of CVD units are set to form different CVD films, and the film-forming tape is run in a certain direction or while running in the opposite direction.
  • the film-forming tape is run in a certain direction or while running in the opposite direction.
  • the multilayer film can be efficiently formed without time waste. [0048] Further, since the film is formed by CVD, all of the above problems caused by vapor deposition or sputtering can be solved.
  • the multilayer film forming method of claim 17 different CVD parts are used in some CVD parts and other CVD parts while running the film-forming tape in the forward direction or in the opposite direction. Since the film forming operation is performed, it is possible to form a multilayer film in which a plurality of different CVD films are stacked.
  • the first CVD film is formed in every other CVD part, and the second CVD film is formed in the remaining CVD part, Since the film-forming tape runs in the forward direction or in the reverse direction, a multilayer film in which the first CVD film and the second CVD film are alternately laminated can be formed.
  • the multilayer film of claim 19 is formed on the film-forming tape by the multilayer film-forming method according to claim 5, 6, 13, or 18. In spite of having a structure in which a plurality of CVD films are alternately laminated, it can be formed efficiently without wasting time.
  • FIG. 1 is a configuration diagram showing a CVD apparatus according to a first embodiment of the present invention.
  • FIG. 2 is an enlarged configuration diagram showing a gas shower electrode of the CVD apparatus of the above embodiment.
  • FIG. 3 is a configuration diagram showing an example of a multilayer film formed using the CVD apparatus of the above embodiment.
  • FIG. 4 is a configuration diagram showing a main part of an improved example of the above embodiment.
  • FIG. 5 is a configuration diagram showing a modification of the first embodiment.
  • FIG. 6 is a configuration diagram showing a CVD apparatus according to a second embodiment of the present invention.
  • FIG. 7 is a configuration diagram showing a modification of the second embodiment.
  • FIG. 8 is a configuration diagram showing a CVD apparatus according to a third embodiment of the present invention.
  • Nb (OEt) (DPM) TG thermo
  • DPM niobium oxide film
  • DTA differential thermal analysis
  • the best example of the multilayer film to be formed is a wavelength selective film of a recording / reproducing medium of a holographic recording / reproducing technique.
  • a silicon oxide film (thickness, for example, 10 nm) and a niobium oxide film (10 nm) or a tantalum oxide film (10 nm) are alternately stacked to form, for example, 5100 layers of films. .
  • the film-forming tape is, for example, a plastic (material PET) having a length of 1000 m and a width of 2 m.
  • a necessary thin film including the above-described wavelength selective film is formed, the force is punched. A large number of media disks sized according to the standard are obtained.
  • the CVD unit of the CVD apparatus may be one in which a normal CVD method is performed, but one having a vaporization unit that vaporizes a liquid compound or solid compound having a boiling point of about 25 ° C or higher.
  • a solution obtained by dissolving a solid in a solvent proposed in Japanese Patent Application No. 2004-290087, is vaporized (gasified) by a vaporizer and used as a gas for forming a CVD film. Even if you make full use of the technology to form.
  • the CVD technique using a vaporizer is also used. The details of the vaporization mechanism using this vaporizer will be described later.
  • Each CVD unit may perform plasma CVD by forming a plasma by applying an RF (Radio Frequency) voltage between the RF electrode and the film forming roller.
  • RF Radio Frequency
  • an RF power source is provided for each CVD unit.
  • a plurality of RF power sources are provided relatively close to each other. May cause interference between other RF power supplies. Therefore, in order to eliminate this possibility, the frequencies of a plurality of RF power supplies may be changed from each other, or the phases may be shifted from each other.
  • the gas for forming the CVD film may be supplied to the film formation area vertically like a shower and from a large number of ejection holes (shower method). In this way, it is possible to easily obtain a multilayer film having a uniform and uniform thickness over the entire surface of the tape.
  • a shower plate method and a plasma method in combination, such as supplying a gas for forming a CVD like a shower on the film formation area and forming plasma. In the embodiment described later, this is used together.
  • the number of CVD units provided in one CVD apparatus may be three as in the embodiment described later, or may be five, but is not necessarily limited thereto, for example, ten. Furthermore, if it has, it may be a large number.
  • Control of the CVD temperature is extremely important for the formation of a CVD film.
  • a film deposition roller (deposition process on one CVD device) This includes cases where there are multiple labels and cases where there is only one label. ) May be temperature-controlled by several tens of degrees Celsius (for example, 50 degrees Celsius or 60 degrees Celsius) using a heat medium (for example, oil).
  • FIG. 1 is a configuration diagram showing a CVD apparatus according to a first embodiment of the present invention
  • FIG. 2 is an enlarged configuration diagram showing a gas shower electrode portion of one CVD portion.
  • [0067] 2 is a CVD apparatus
  • 4 is a chamber thereof
  • 6 is a first scraping roller
  • 8 is a second scraping roller
  • 10 is a first film forming roller
  • 12 is a second film forming film.
  • the rollers 14 are third film forming rollers, and the first to third film forming rollers 10, 12, and 14 are disposed between the first and second scraping rollers 6 and 8. .
  • the film-deposited tape 18 scraped to the first scraping roller 6 passes over the first to third deposition rollers 10, 12, 14 and then to the second scraping roller 8.
  • a tape travel path is formed, and the film-deposited tape 18 is directed along the tape travel path from the first scraping roller 6 toward the second scraping roller 8 in the direction of the direction of force (positive direction). ) Or the opposite direction, from the second scraping roller 8 to the first scraping roller 6 side, traveling in the opposite direction (reverse direction).
  • the film-deposited tape 18 has a length of, for example, 1000 m and a width of, for example, 2 m, and is made of a resin such as PET.
  • Reference numeral 20 denotes a main vacuum pipe which communicates with the chamber 4 through the vacuum exhaust ports 22, 22,.
  • 24 is a vacuum pipe connected to the main vacuum pipe 20
  • 26 is a water-cooled trap provided in the vacuum pipe 24
  • 28 is a vacuum valve provided in the vacuum pipe 24
  • 30 is an end of the vacuum pipe 24
  • an exhaust vacuum pump connected to
  • [0070] 32 is a gas supply pipe for supplying N 2 / Ar gas.
  • Reference numerals 40, 42, and 44 denote CVD units provided corresponding to the film forming rollers 10, 12, and 14, respectively, so that plasma CVD is performed and the CVD gas is supplied by a shower method. And have the same configuration.
  • this CVD unit 40, 42, 44 a solution obtained by dissolving a solid in a solvent is vertical and the tip is directed downward. Vaporization is performed by supplying the gas to the nozzle 50, vaporizing the gas from the tip of the nozzle 50 into the vaporization tube 52, and supplying the vaporized gas into the chamber 4 as a CVD gas. It has a mechanism. The configuration of this vaporization mechanism will be described later.
  • [0073] 56 is a gas supply pipe for supplying the gas from the vaporization pipe 50 into the chamber 4 from its ceiling, and the gas supplied thereto is supplied onto the film-forming roller 10 (12, 14) through a number of jets. It is made to be able to supply like Sha
  • Reference numeral 58 denotes a gas shower electrode, and one end of the RF power source 60 is electrically connected. The other end of the RF power source 60 is grounded, and the film forming rollers 10, 12, and 14 are grounded.
  • plasma discharge occurs between the portions of the CVD units 40, 42, 44 on the film-forming tape 18 and the gas shower electrode 58.
  • Reference numeral 62 denotes a deposition preventing plate for preventing dust from falling and adhering to the film-deposited tape 18, and 64 denotes a partition plate for separating the CVD units 40, 42, and 44 from others.
  • FIG. 70 is the lid of the chamber 4
  • 72 is a shield electrode that forms the outermost shell portion of the gas shower electrode 58
  • 74 is an RF electrode that is insulated from the inside of the shield electrode 72.
  • One end of 60 is electrically connected.
  • the gas supply pipe 56 for supplying the gas from the vaporization pipe 52 into the chamber 4 is provided inside the RF electrode 74 so that an oxidizing gas supply space 76 is formed therebetween.
  • Reference numeral 78 denotes an oxidizing gas supply pipe for supplying an oxidizing gas or the like to the oxidizing gas supply space 76.
  • Reference numeral 80 denotes a gas shower plate provided substantially horizontally below the RF electrode 60 so that a space 82 is formed between them, and is supplied into the space 82 from the gas supply pipe 56.
  • Vaporized raw material ejection holes (ejecting holes) 82, 82, etc. for ejecting the gas (vaporized raw material) downward, and the oxidizing gas supplied into the oxidizing gas supply space 76 on the lower side Oxidizing gas, etc. ejected into the nozzles 84, 84, ... are arranged so that the vaporized raw material and oxidizing gas do not react in the space 82.
  • the film is supplied onto the film forming tape 18 on the film forming rollers 10, 12, and 14 through paths separated from each other.
  • 86 is a heater provided in the RF electrode 60
  • 88 is a heater power source for supplying power to the heater 86
  • 90 is a noise cut filter.
  • 92 is a vaporizing raw material supply vanolev is there.
  • the first to third CVD units 40, 42, and 44 can individually set various CV D conditions, and the CVD film to be formed can also be set individually. In addition, it is possible to individually control the film forming operation and stop the film forming operation.
  • the first CVD portion 40 has the first CVD film
  • the second CVD portion 42 has the second CVD film
  • the third CVD portion 44 has the third CVD film.
  • the first CVD film can be formed in the first and third CVD portions 40 and 44
  • the second CVD film can be formed in the second CVD portion 42.
  • the first CVD film can be formed in the first, second, and third CVD portions 40, 42, and 44.
  • the film-forming tape 18 can be run in the forward direction or in the opposite direction, and the running direction can be arbitrarily controlled.
  • the multilayer structure having an arbitrary laminated structure with the first to third CVD film forces can be obtained.
  • the ability to form a film is possible.
  • FIG. 3 is a cross-sectional view showing an example of a multilayer film formed by the present CVD apparatus 2.
  • a is a substrate
  • b is a pit
  • c is an aluminum reflecting film
  • d is a wavelength selective film, for example, a silicon oxide film SiO and a niobium oxide film NbO are alternately laminated, for example, 10 to 100: It consists of multiple layers of layers.
  • e is, for example, a silicon oxide film SiO
  • f is, for example, niobium oxide NbO.
  • Such a multilayer film is formed, for example, by forming the silicon oxide film SiO in the first and third CVD portions 40, 44 and forming the niobium oxide film NbO in the second CVD portion 42.
  • the first to third CVD units 40, 42, and 44 are operated for film formation.
  • a silicon oxide film Si0 + niobium oxide film Nb 2 O + silicon oxide film SiO is formed.
  • the film formation operation of the third CVD unit 40 is stopped, and the film formation operation is performed by the first and second CVD units 40 and 42.
  • a niobium oxide film Nb 2 O + silicon oxide film Si 0 is formed.
  • the vaporizer consisting of the nozzle 50 and the vaporization pipe 52 is operated (gas gas By doing supply). Also, when stopping the film forming operation, stop the vaporizer (by stopping the gas supply).
  • FIG. 4 shows a main part of an improved example of the above embodiment.
  • the portion of the film forming tape 18 that is in front of and in contact with the roller 10 is surrounded.
  • a discharge preventing conductor 98 is provided.
  • the electrical discharge preventing conductor 98 is disposed so as to cover the film-forming tape 18 with a gap within 10 mm from both surfaces of the film-forming tape 18. In this way, it is possible to more reliably prevent the formation of a denatured film by surely preventing the plasma from being formed even on the portion of the film-deposited tape 18 that is not located on the film-forming roller 10. Can do.
  • CVD is performed between the gas shower electrode 58 and the film-forming roller 10 (or 12, 14), so that normal film formation is possible, so that plasma discharge is also performed only between them.
  • the film-deposited tape 18 is conductive, plasma discharge is also generated on the portions 18a and 18a that are separated from the film-forming roller 10, where a modified CVD film component is produced, There is a risk of sticking to.
  • the discharge preventing conductor 98 is provided to prevent discharge by the electrostatic shield, thereby preventing the generation of the altered CVD component.
  • This discharge preventing conductor 98 can prevent discharge in the portion indicated as the discharge prevention area in FIG.
  • FIG. 5 shows a modification of the embodiment shown in FIGS.
  • the gas shower electrode 58 is heated in relation to the application of the RF voltage of the RF power source 60 between the ground and the gas shower electrode 58 (more precisely, the RF electrode 60).
  • the potential was high. No.
  • each RF power source 60 is connected to each film forming roller 10, 12, and 14, and a gas shower electrode 58 (more precisely, RF electrode 60: see FIG. 2) is provided. It is grounded.
  • FIG. 6 is a block diagram showing a CVD apparatus according to the second embodiment of the present invention.
  • 102 is a CVD apparatus
  • 104 is a chamber
  • 106 is a first scraping roller
  • 10 8 is a second scraping roller
  • 110 is a film forming roller, and has a diameter of, for example, 300 to 20000 mm The diameter is 2m for f rows.
  • 116 and 116 are feed rollers
  • 117 and 117 are tension control rollers.
  • a film-forming tape is transferred from the first scraping roller 106 to the second scraping roller 108 via the film-forming roller 110.
  • a travel path is formed to run 18, and the film-forming tape 18 is directed along the travel path from the first scraping roller 110 to the second scraping roller 108 in the direction of the direction (normal direction). Traveling in the direction) or in the opposite direction from the second scraping roller 108 to the first scraping roller 110 (reverse direction).
  • [0100] 140 to 144 are CVD portions provided corresponding to the respective areas located on the film forming roller 110, and a CVD film is formed on a portion of the film-deposited tape 18 located on the area.
  • the power to do S Since these CVD units 140 to 144 have the same principle and structure as the CVDs 40, 42, and 44 of the CVD apparatus 2 shown in FIG. 1, their detailed description is omitted.
  • Each of the CVD units 140 to 144 can individually set various CVD conditions, and a CVD film to be formed can also be set individually. Control for stopping the membrane operation can be performed individually, and this is also the same as in the first embodiment.
  • 122 is an exhaust port
  • 123, 123 ⁇ are partition plates, and between adjacent CVD parts (between 140 ⁇ 141, 1 41 ⁇ 142, 142 ⁇ 143, 143 ⁇ 144) to prevent gas interference.
  • 124 is an exhaust pipe
  • 126 is a deposition plate
  • 158 is a gas shower electrode
  • 160 is an RF power source.
  • the film forming roller 110 is grounded, and the gas shower electrode 158 is connected to the terminal of the RF power source 160 to be hot.
  • an arbitrary CVD film is formed in the CVD units 140 to 144, and the film-forming tape 18 is run in the forward direction or the reverse direction.
  • the film-forming tape 18 is run in the forward direction or the reverse direction.
  • the silicon oxide film SiO is formed on every other CVD part, for example, 140, 142, 144, and other CVD parts, for example, 141, 1
  • the niobium oxide film NbO is formed on 43. First, the film-deposited tape 18 is moved in the forward direction.
  • a multilayer film (five-layer film) made of the silicon oxide film SiO + niobium oxide film Nb 2 O + silicon oxide film SiO + niobium oxide film Nb 2 O + silicon oxide film SiO is formed.
  • the CVD unit 144 is stopped, and the film-forming tape 18 is run in the reverse direction.
  • a multilayer film (four-layer film) made of the niobium oxide film NbO + silicon oxide film SiO + niobium oxide film Nb 2 O is formed on the five-layer film.
  • FIG. 7 shows a modification of the embodiment shown in FIG.
  • the ground of the RF power source 160 of each of the CVD units 140 to 144 whereas the gas shower electrode 158 side was hot when applied between the gas shower electrodes 158.
  • the difference is that the film-forming roller 110 is hot.
  • one end of one RF power supply 160 is connected to the film forming roller 110, and the gas shower electrodes 158 of the CVD units 140 to 144 are grounded.
  • FIG. 8 is a configuration diagram of a CVD apparatus showing a third embodiment of the present invention.
  • a silicon oxide film SiO and niobium oxide are sequentially formed on a disk-shaped or wafer-shaped substrate 218.
  • a multilayer film is formed by alternately depositing the film NbO by CVD.
  • 204 is a chamber
  • 250 is a nozzle provided vertically above the central portion of the chamber 204, the tip is directed downward
  • 252 is a vaporization tube that receives the tip of the nozzle 250 at the top.
  • the vaporization pipe 252 communicates with the gas supply pipe 256 via the valve 254.
  • the gas supply pipe 256 forms a part of the gas shower electrode 258, and the gas from the vaporization pipe 252 is supplied into the space 282 inside the gas shower electrode 258 through the gas supply pipe 256.
  • the configuration of the gas shower electrode 258 is substantially the same as that of the gas shower electrode 58 shown in FIG. 2, and the oxidizing gas from the oxidizing gas supply pipe 278 and the empty air from the gas supply pipe 256 are the same.
  • Vaporized raw material gas and power supplied in the interval 282 are ejected from the gas shower plate 280.
  • the gas shower plate 280 has vaporized raw material ejection holes 282, 282,... For ejecting the gas (vaporized raw material) supplied from the gas supply pipe 256 into the space 282 downward.
  • Oxidant gas ejection holes 284, 284,... For ejecting oxidant gas supplied into the oxidant gas supply space 276 downward are disposed in the gas shower electrode 258.
  • the vaporized raw material and the oxidizing gas or the like do not react with each other, so that the CVD is performed through the paths separated from each other and is supplied onto the substrate 218 on the stage 300.
  • the nozzle 256 has a gas supply system for forming a silicon oxide film and a gas supply system for forming a niobium oxide film, and supplies gas for the gas supply system for forming a silicon oxide film by switching valves.
  • a gas supply system for forming a silicon oxide film and a gas supply system for forming a niobium oxide film supplies gas for the gas supply system for forming a silicon oxide film by switching valves.
  • Reference numeral 260 denotes an RF power source for forming plasma.
  • one end of the RF electrode 258 is connected to the gas shower electrode 258, and the stage 300 is grounded.
  • one end of the RF electrode 258 may be connected to the stage 300 and the gas shower electrode 258 side may be grounded, that is, the stage 300 may be hot.
  • Fig. 9 shows an example of a material for forming a niobium oxide film, Nb ( ⁇ Et) (DPM) TG (
  • Thermogravimetric analysis and DTA (differential thermal analysis) characteristics ( ⁇ , 760 Torr atmosphere).
  • niobium oxide film it is sufficiently practical to form a niobium oxide film by supplying it to the nozzle 50 of the apparatus and vaporizing it in the vaporization tube 52 and supplying it into the chamber as a material for forming the niobium oxide film. I understand.
  • a carrier gas channel 422 for supplying a carrier gas such as nitrogen gas or argon to a chamber inside the reaction chamber is formed by a carrier gas pipe 423 and an orifice pipe 424.
  • a vaporization section 425 as a vaporization chamber is formed at the tip of the tube 424 (that is, the outlet 433 of the carrier gas flow path 422).
  • the vaporization mechanism 420 is configured such that the base end of the carrier gas pipe 423 (that is, the inlet of the carrier gas channel 422) is connected to a supply mechanism (not shown) for supplying a carrier gas.
  • the leading end 430 of the carrier gas pipe 423 is connected to the base end 431 of the orifice pipe 424, whereby high-speed carrier gas can be supplied from the carrier gas pipe 423 to the orifice pipe 424.
  • a flow controller (not shown) is provided.
  • a pressure transducer 432 is attached to the carrier gas pipe 423.
  • the pressure transducer 432 accurately measures the carrier gas pressure in the carrier gas pipe 423 and its fluctuation, and constantly monitors it while recording it.
  • the pressure transducer 432 transmits an output signal having a signal level corresponding to the pressure level of the carrier gas to a control unit (not shown).
  • the carrier gas pressure result can be displayed on the display unit (not shown) by force based on the output signal so that the operator can monitor it. This allows the operator to monitor the clogging of the carrier gas channel 422 based on the pressure result.
  • the inner diameter of the carrier gas pipe 423 is selected to be larger than the inner diameter of the orifice pipe 424, and the carrier gas pipe 423 is configured to further increase the flow velocity of the carrier gas supplied from the carrier gas pipe 423 to the orifice pipe 424. ing.
  • the orifice pipe 424 is arranged in a vertical direction, and a tip 433 is provided with a convex part 434 having a trapezoidal cone shape, and a fine hole 435 is provided at the top of the convex part 434. .
  • the convex portion 434 is provided at the tip, so that the inclined surface 34a is formed around the outer periphery of the spray port 436 which is the tip of the pore 435, and the residue is thereby formed in the spray port 436. This makes it difficult to collect and prevents clogging of the spray port 436.
  • the apex angle ⁇ of the convex portion 434 is 45 ° to: 135 °, especially 30.
  • the pore 435 of the spray port 436 is selected so that the inner diameter thereof is smaller than the inner diameter of the orifice pipe 424, and the flow velocity of the carrier gas supplied from the orifice pipe 424 to the pore 435 is further increased.
  • the tip end of the pore 435 can be disposed so as to protrude into the internal space 438 of the vaporizing portion 425 by inserting the convex portion 434 of the orifice tube 424 into the base end 437 of the vaporizing portion 425.
  • the orifice pipe 424 has a plurality (for example, five in this case) of connecting pipes 440a to 440e communicating from the base end 431 to the convex portion 434.
  • a raw material solution supply mechanism 421 is provided in each of the tubes 440a to 440e. Accordingly, the orifice pipe 424 is configured such that a predetermined amount of the raw material solution can be supplied from the raw material solution supply mechanism 421 via the connection pipes 440a to 440e.
  • the orifice pipe 424 applies a carrier gas flowing at a high speed to the raw material solution supplied from, for example, the connection pipe 440a, makes the raw material solution fine particles or mist, and disperses it in the carrier gas. In this state, spraying is performed at a high speed (230 m / sec to 350 m / sec) into the vaporizing section 425 through the pores 435.
  • the orifice pipe 424 has an inner diameter selected to be, for example, about ⁇ 1.
  • a length in the longitudinal direction extending in the vertical direction is selected to be about 100 mm, and the pore 435
  • the inner diameter is selected to be about ⁇ 0.2 to 0.7 mm, and the diameter is reduced from the base end 431 to the pore 435 so that the carrier gas can be increased at high speed. .
  • the vaporizing section 425 connected to the orifice pipe 424 has a tubular shape and is arranged in the vertical direction like the orifice pipe 424, and its inner diameter is selected to be significantly larger than the inner diameter of the orifice pipe 424. As a result, the pressure in the vaporizing section 425 is formed to be lower than the pressure in the orifice pipe 424.
  • the pressure in the vaporizing section 425 is selected to be about lOTorr, for example, whereas the pressure in the orifice pipe 424 is selected to be about 500 to 1000 Torr, for example.
  • a large pressure difference is provided between the portion 425 and the orifice tube 424.
  • the carrier gas pressure after the flow rate control is selected by the carrier gas flow rate, the solution flow rate, and the force S that increases or decreases depending on the size of the pore 435, and finally the size of the spray port 436 is selected.
  • the pressure is preferably controlled to 500 to 1000 Torr.
  • a vaporization section heater 442 as a heating means is attached between the base end 437 and the distal end (that is, the connection portion with the reaction chamber).
  • the vaporizing section 425 can be heated to, for example, about 270 ° C. by the heater 442.
  • the base end 437 of the vaporizing section 425 is formed in a substantially hemispherical shape, the base end 437 side can be uniformly heated by the vaporizing section heater 442. Has been made.
  • the raw material solution dispersed and atomized by the high-speed carrier gas flow in the orifice pipe 424 is instantaneously heated by the vaporization section heater 442 and vaporized instantaneously. It is configured as follows. At this time, the time from when the raw material solution is mixed in the orifice pipe 424 to when it is sprayed into the vaporization section 425 is extremely short (preferably 0.:! To 0.0. Preferably within 02 seconds). The raw material solution becomes fine immediately after being dispersed in the orifice pipe 424 by the high-speed carrier gas flow, and is instantly vaporized in the vaporizing section 425. In addition, the phenomenon of vaporizing only the solvent is suppressed.
  • the mist size is reduced (the mist diameter is 1 ⁇ m or less), and the evaporation area and the evaporation rate are increased. That power S. If the fog size is reduced by an order of magnitude, the evaporation area will increase by an order of magnitude. It is preferable to design the angle of the spraying port 436 and the size of the vaporizing unit 425 so that the mist ejected from the spraying port 436 does not collide with the inner wall of the vaporizing unit 425.
  • the mist collides with the inner wall of the vaporizing section 425, it adheres to the wall surface, the evaporation area decreases by an order of magnitude, and the evaporation rate decreases.
  • the mist is attached to the wall of the vaporizing section 425 for a long time, it is a column that changes into a compound that does not evaporate due to thermal decomposition.
  • the vaporization unit 425 can lower the sublimation temperature of the raw material mixture contained in each raw material solution by reducing the pressure inside thereof, and as a result, the vaporization unit heater The raw material solution can be easily vaporized by the heat from 442.
  • the vaporizing unit 425 vaporizes the raw material solution and supplies it to the chamber 402 as a raw material gas as a CVD film forming gas.
  • a raw material gas as a CVD film forming gas.
  • one atomic layer or one molecule is formed by the CVD method.
  • a thin film of layers can be formed.
  • the base end 437 of the vaporizing section 425 has a heat insulating material 443 between the vaporizing section 425 and the heat insulating material 443 so that heat from the vaporizing section 425 is not easily transmitted to the orifice pipe 424.
  • the base end 437 of the vaporizing portion 425 is hermetically sealed by a ring 444.
  • a heat insulating material 446 is provided on the fastening member 445 that connects the orifice pipe 424 and the vaporizing section 425.
  • the mist sprayed from the pores 435 does not wet the inner wall of the vaporizing section 425.
  • the reason is that the evaporation area is reduced by orders of magnitude on wet walls compared to fog. That is, a structure in which the inner wall of the vaporizing section 425 is not soiled at all is preferable.
  • the vaporization part 425 wall is preferably mirror-finished so that the contamination of the inner wall of the vaporization part 425 can be easily evaluated.
  • the connecting pipes 440a to 440e are each a raw material solution supply mechanism 4 for supplying a raw material solution.
  • the raw material solution supply mechanism 421 is connected to the orifice pipe 424 except that the type of the raw material solution supplied to the orifice pipe 424 is different and the configuration is the same. Only the raw material solution supply mechanism 421 provided in the part 440a will be described.
  • the connecting pipes 440a to 440e are arranged in the orifice pipe 424 so that the openings do not face each other, so that, for example, the raw material solution supplied to the orifice pipe 424 from the opening of the connecting pipe 440a is It is possible to surely prevent the other connecting pipes 440b to 440e from flowing into the openings.
  • the raw material solution stored in the raw material solution tank 450 is passed through a predetermined raw material solution flow path 451, whereby a liquid mass is supplied.
  • a flow controller (LMFC) 452 and a block valve 453 are sequentially supplied to the orifice pipe 424.
  • the liquid mass flow controller 452 controls the flow rate of the raw material solution flowing through the raw material solution flow path 51.
  • the block valve 453 is composed of first to fourth switching valves 454a to 454d. These fourth:! To fourth switching valves 454a to 454d are collectively controlled by a control unit (not shown). Les.
  • the block valve 453 opens only the first switching valve 454a and closes the other second to fourth switching valves 454b to 454d. To do.
  • the raw material solution is supplied to the carrier gas flowing at high speed, and the raw material solution is dispersed in the carrier gas in the form of fine particles or mist by the high-speed flowing carrier gas. This can be supplied to the vaporizing section 425.
  • the raw material solution supply mechanism 421 when the raw material solution is not supplied from the block valve 453 to the orifice pipe 424, the solvent stored in the solvent tank 457 is supplied with a predetermined solvent flow. By passing through the passage 458, the liquid mass flow controller (LMFC) 459 and the connecting pipe 440a are sequentially supplied to the orifice pipe 424.
  • LMFC liquid mass flow controller
  • the control unit closes the first switching valve 454a, the third switching valve 454c, and the fourth switching valve 454d and opens only the second switching valve 454b.
  • the solvent can be supplied to the orifice pipe 424 through the connection pipe 440a. Yes.
  • the solid matter clogged in the connecting pipe 440a can be removed by flowing only the solvent from the connecting pipe 440a to the orifice pipe 424.
  • control unit closes the first switching valve 454a, the second switching valve 454b, and the fourth switching valve 454d, and opens only the third switching valve 454c.
  • the solvent can be supplied to the vent pipe 461 via the block valve 453 and discarded.
  • the control unit closes the first switching valve 454a, the second switching valve 454b, and the third switching valve 454c and opens the fourth switching valve 454d.
  • the raw material solution can be supplied to the vent pipe 461 via the block valve 453 and discarded.
  • the raw material solution is supplied into a carrier gas flow that always flows at high speed toward the chamber in the orifice tube 424, whereby the raw material solution is made into fine particles or mist. Dispersed in the carrier gas, evaporated as it is in the vaporizing section 425, and supplied to the chamber as a raw material gas.
  • the raw material solution is instantaneously atomized by a high-speed carrier gas flow, and the raw material solution is easily vaporized by the heat of the vaporization section heater 442.
  • the raw material solution obtained by dissolving a raw material compound that is difficult to vaporize in a solvent can be easily vaporized in the vaporization section 425.
  • the carrier gas pressurized in the carrier gas pipe 423 is introduced at high speed into the orifice pipe 424 (for example, the carrier gas is 500 to:! OOOTorr, 2 OOml / mir! To 2L). / min), it is possible to suppress the temperature rise of the raw material solution in the orifice pipe 424.
  • this vaporization mechanism 420 it is possible to prevent only the solvent in the raw material solution from evaporating and vaporizing in the orifice pipe 424, so that it is possible to prevent the raw material solution from being concentrated at the orifice pipe 424.
  • the increase in viscosity can be suppressed by force, and precipitation of the raw material compound can be prevented.
  • the vaporization mechanism 420 since the raw material solution dispersed in the carrier gas can be instantaneously vaporized by the vaporization section 425, the solvent in the raw material solution in the vicinity of the pores 435 and 435. Since only vaporization can be suppressed, clogging of the pores 435 can be suppressed. Forcibly, the continuous use time of the CV D vaporizer 3 can be extended.
  • each of the plurality of CVD units has been described so that the types of CVD films, the setting of other CVD conditions, the film forming operation, and the stopping control thereof can be individually performed. Not only different conditions may be set for the CVD section, but the same conditions may be set for each CVD section to form a single type of CVD film.
  • the present invention can be generally used for a CVD apparatus and a multilayer film forming method using the same.

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Abstract

La présente invention concerne un dispositif CVD pouvant former de manière efficace un film à couches multiples sans entraîner de perte de temps, ainsi qu’un procédé de formation d’un film à couches multiples utilisant ce dispositif CVD. Une voie de déplacement de ruban s’étendant à partir d’un rouleau récepteur (6) en passant par des rouleaux de formation de film (10, 12, 14) vers un rouleau récepteur (8) est prévue dans une chambre (4), un ruban (18) devant être formé avec un film peut se déplacer le long de la voie de déplacement de ruban dans un sens vers l’avant ou un sens vers l’arrière, des unités CVD (40, 42, 44) correspondant respectivement aux rouleaux de formation du film respectifs (10) sont prévues et les types de films CVD respectifs et d’autres conditions CVD sont définis individuellement et une opération de formation de film et son arrêt sont commandés individuellement pour les unités CVD respectives (40, 42, 44).
PCT/JP2006/303798 2005-03-04 2006-02-28 Dispositif cvd, procede de formation d’un film a couches multiples l’utilisant et film a couches multiples ainsi forme WO2006093168A1 (fr)

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JP2007505971A JPWO2006093168A1 (ja) 2005-03-04 2006-02-28 Ｃｖｄ装置と、それを用いた多層膜形成方法と、それにより形成された多層膜
TW095107160A TW200641180A (en) 2005-03-04 2006-03-03 CVD device, multilayer film forming method using it, and multilayer film formed by it

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JP2006312778A (ja) * 2005-04-06 2006-11-16 Toyo Seikan Kaisha Ltd 表面波プラズマによる蒸着膜の形成方法及び装置
WO2008057625A2 (fr) * 2006-06-05 2008-05-15 General Electric Company Systèmes et procédés pour un dépôt de couche atomique rouleau à rouleau sur des objets alimentés en continu
WO2010052846A1 (fr) * 2008-11-05 2010-05-14 株式会社アルバック Dispositif de traitement sous vide à enroulement
US8137464B2 (en) 2006-03-26 2012-03-20 Lotus Applied Technology, Llc Atomic layer deposition system for coating flexible substrates
EP2503024A1 (fr) * 2011-03-23 2012-09-26 Kojima Press Industry Co., Ltd. Appareil de production de corps stratifié
JP2012201898A (ja) * 2011-03-23 2012-10-22 Toppan Printing Co Ltd 原子層堆積法成膜装置における成膜処理ドラム
JP2013535575A (ja) * 2010-07-23 2013-09-12 ロータス アプライド テクノロジー エルエルシー ロール・ツー・ロール薄膜堆積用の可撓性ウェブ基板の片面接触式基板輸送機構
US8637117B2 (en) 2009-10-14 2014-01-28 Lotus Applied Technology, Llc Inhibiting excess precursor transport between separate precursor zones in an atomic layer deposition system
US8956038B2 (en) 2012-02-22 2015-02-17 Empire Technology Development Llc Lighting device having a light guide structure
KR101521606B1 (ko) * 2012-12-17 2015-05-19 (주)에스엔텍 플라즈마 화학기상 장치
JP2016514198A (ja) * 2013-01-31 2016-05-19 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 調整可能な電極を有する堆積源
WO2020025102A1 (fr) * 2018-07-30 2020-02-06 Applied Materials, Inc. Procédé de revêtement d'un substrat souple avec un empilement de couches, empilement de couches et appareil de dépôt pour le revêtement d'un substrat souple avec un empilement de couches

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Publication number Priority date Publication date Assignee Title
JP2006312778A (ja) * 2005-04-06 2006-11-16 Toyo Seikan Kaisha Ltd 表面波プラズマによる蒸着膜の形成方法及び装置
US8137464B2 (en) 2006-03-26 2012-03-20 Lotus Applied Technology, Llc Atomic layer deposition system for coating flexible substrates
US8202366B2 (en) 2006-03-26 2012-06-19 Lotus Applied Technology, Llc Atomic layer deposition system utilizing multiple precursor zones for coating flexible substrates
US9469901B2 (en) 2006-03-26 2016-10-18 Lotus Applied Techonology, Llc Atomic layer deposition method utilizing multiple precursor zones for coating flexible substrates
US9238868B2 (en) 2006-03-26 2016-01-19 Lotus Applied Technology, Llc Atomic layer deposition method for coating flexible substrates
WO2008057625A2 (fr) * 2006-06-05 2008-05-15 General Electric Company Systèmes et procédés pour un dépôt de couche atomique rouleau à rouleau sur des objets alimentés en continu
WO2008057625A3 (fr) * 2006-06-05 2009-03-19 Gen Electric Systèmes et procédés pour un dépôt de couche atomique rouleau à rouleau sur des objets alimentés en continu
JP2009540122A (ja) * 2006-06-05 2009-11-19 ゼネラル・エレクトリック・カンパニイ 連続送り物体へのロールツーロール原子層堆積システム及び方法
WO2010052846A1 (fr) * 2008-11-05 2010-05-14 株式会社アルバック Dispositif de traitement sous vide à enroulement
US8637117B2 (en) 2009-10-14 2014-01-28 Lotus Applied Technology, Llc Inhibiting excess precursor transport between separate precursor zones in an atomic layer deposition system
JP2013535575A (ja) * 2010-07-23 2013-09-12 ロータス アプライド テクノロジー エルエルシー ロール・ツー・ロール薄膜堆積用の可撓性ウェブ基板の片面接触式基板輸送機構
JP2012201898A (ja) * 2011-03-23 2012-10-22 Toppan Printing Co Ltd 原子層堆積法成膜装置における成膜処理ドラム
US20120240854A1 (en) * 2011-03-23 2012-09-27 Kojima Press Industry Co., Ltd. Apparatus for producing laminated body
US9243331B2 (en) 2011-03-23 2016-01-26 Kojima Press Industry Co., Ltd. Apparatus for producing laminated body
EP2503024A1 (fr) * 2011-03-23 2012-09-26 Kojima Press Industry Co., Ltd. Appareil de production de corps stratifié
US8956038B2 (en) 2012-02-22 2015-02-17 Empire Technology Development Llc Lighting device having a light guide structure
KR101521606B1 (ko) * 2012-12-17 2015-05-19 (주)에스엔텍 플라즈마 화학기상 장치
JP2016514198A (ja) * 2013-01-31 2016-05-19 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 調整可能な電極を有する堆積源
WO2020025102A1 (fr) * 2018-07-30 2020-02-06 Applied Materials, Inc. Procédé de revêtement d'un substrat souple avec un empilement de couches, empilement de couches et appareil de dépôt pour le revêtement d'un substrat souple avec un empilement de couches
WO2020025153A1 (fr) * 2018-07-30 2020-02-06 Applied Materials, Inc. Système et procédé de revêtement d'un substrat
CN112513318A (zh) * 2018-07-30 2021-03-16 应用材料公司 用于涂覆基板的系统和工艺

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