WO2006090551A1 - Pate electroconductrice, pieces electroniques en ceramique laminees et leur procede de fabrication - Google Patents
Pate electroconductrice, pieces electroniques en ceramique laminees et leur procede de fabrication Download PDFInfo
- Publication number
- WO2006090551A1 WO2006090551A1 PCT/JP2006/301133 JP2006301133W WO2006090551A1 WO 2006090551 A1 WO2006090551 A1 WO 2006090551A1 JP 2006301133 W JP2006301133 W JP 2006301133W WO 2006090551 A1 WO2006090551 A1 WO 2006090551A1
- Authority
- WO
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- Prior art keywords
- oxide
- glass
- conductive paste
- mol
- twenty
- Prior art date
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- 239000000919 ceramic Substances 0.000 title claims abstract description 54
- 238000000034 method Methods 0.000 title claims abstract description 15
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 239000011521 glass Substances 0.000 claims abstract description 118
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 claims abstract description 32
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 20
- 239000004020 conductor Substances 0.000 claims abstract description 16
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910000272 alkali metal oxide Inorganic materials 0.000 claims abstract description 12
- 229910000287 alkaline earth metal oxide Inorganic materials 0.000 claims abstract description 11
- 239000011787 zinc oxide Substances 0.000 claims abstract description 10
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 8
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 4
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910001928 zirconium oxide Inorganic materials 0.000 claims abstract description 4
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims description 30
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical group [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 claims description 28
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 claims description 19
- 239000000292 calcium oxide Substances 0.000 claims description 19
- 239000002253 acid Substances 0.000 claims description 18
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 13
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- FUJCRWPEOMXPAD-UHFFFAOYSA-N lithium oxide Chemical group [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 claims description 9
- 229910001947 lithium oxide Inorganic materials 0.000 claims description 9
- 229910052760 oxygen Inorganic materials 0.000 claims description 9
- KKCBUQHMOMHUOY-UHFFFAOYSA-N sodium oxide Chemical compound [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 claims description 9
- 229910052810 boron oxide Inorganic materials 0.000 claims description 8
- 229910001948 sodium oxide Inorganic materials 0.000 claims description 8
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 claims description 7
- 239000011734 sodium Substances 0.000 claims description 6
- -1 respectively Chemical compound 0.000 claims description 4
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 238000010304 firing Methods 0.000 abstract description 17
- 239000012298 atmosphere Substances 0.000 abstract description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 3
- 239000011368 organic material Substances 0.000 abstract description 3
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 229910044991 metal oxide Inorganic materials 0.000 abstract 1
- 150000004706 metal oxides Chemical class 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
- 239000003985 ceramic capacitor Substances 0.000 description 29
- 238000010438 heat treatment Methods 0.000 description 22
- 230000000694 effects Effects 0.000 description 21
- 239000000126 substance Substances 0.000 description 19
- 238000000354 decomposition reaction Methods 0.000 description 16
- 239000005416 organic matter Substances 0.000 description 16
- 238000002425 crystallisation Methods 0.000 description 13
- 230000008025 crystallization Effects 0.000 description 13
- 238000007747 plating Methods 0.000 description 13
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 239000002184 metal Substances 0.000 description 6
- 239000003960 organic solvent Substances 0.000 description 6
- 238000004455 differential thermal analysis Methods 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 229910018068 Li 2 O Inorganic materials 0.000 description 3
- 239000002585 base Substances 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000000280 densification Methods 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 229910052783 alkali metal Inorganic materials 0.000 description 2
- 150000001340 alkali metals Chemical class 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 238000010828 elution Methods 0.000 description 2
- 238000004880 explosion Methods 0.000 description 2
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- 238000010298 pulverizing process Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- ZSLUVFAKFWKJRC-IGMARMGPSA-N 232Th Chemical compound [232Th] ZSLUVFAKFWKJRC-IGMARMGPSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229910052776 Thorium Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910000428 cobalt oxide Inorganic materials 0.000 description 1
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 description 1
- 238000009841 combustion method Methods 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 238000001238 wet grinding Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
- C03C8/20—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions containing titanium compounds; containing zirconium compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/14—Conductive material dispersed in non-conductive inorganic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
- H01C17/065—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
- H01C17/06506—Precursor compositions therefor, e.g. pastes, inks, glass frits
- H01C17/06513—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component
- H01C17/06533—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component composed of oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
- H05K1/092—Dispersed materials, e.g. conductive pastes or inks
Definitions
- the present invention relates to a conductive paste, a multilayer ceramic electronic component, and a method for manufacturing the same, and more specifically, a conductive base used for forming a conductor film such as an external electrode of a ceramic electronic component, and using the same.
- the present invention relates to a multilayer ceramic electronic component and a manufacturing method thereof.
- External electrodes of ceramic electronic components such as multilayer ceramic capacitors are usually formed by applying and baking a conductive base.
- the conductive paste used at this time contains glass with a low soft spot (glass frit) for the purpose of ensuring the denseness of the external electrodes. It is common to make it.
- the conductive paste of Patent Document 1 is characterized by the constituent components of glass frit. Even when glass frit containing no acid or lead is used, the ceramic element and the adhesive strength are high, and the external electrode is used. It is said that it can be formed.
- the glass frit is also configured to be used with the resin dissolved in the organic solvent, and the organic frit is deposited on the surface of the glass frit when mixed with the resin. Will adhere.
- Patent Document 1 Japanese Patent Laid-Open No. 2002-25337
- the present invention solves the above-mentioned problem, and efficiently decomposes organic matter adhering to the glass surface regardless of the atmosphere during firing to form a highly dense conductor film. It is an object of the present invention to provide a conductive paste capable of being manufactured, a method for manufacturing a ceramic electronic component using the conductive paste, and a multilayer ceramic electronic component manufactured by the manufacturing method.
- a conductive paste containing glass for forming a conductive film of a ceramic electronic component wherein the glass contains silicon oxide, boron oxide, and iron oxide, respectively, SiO, B 2 O, F
- the glass in the structure of the invention according to claim 1, the glass further contains acid zinc as ZnO in a range of 1 to 20 mol%. It is a feature.
- the conductive paste of claim 3 is the structure of the invention of claim 1 or 2.
- the glass further contains an alkali metal oxide and an alkaline earth metal oxide.
- the alkali metal oxide is lithium oxide and Z or sodium oxide
- the alkaline earth metal oxide is barium oxide and Z or calcium oxide.
- the glass further contains 1 to L0 mol% of aluminum oxide as Al 2 O.
- the glass further contains acid and titanium and z or acid and zirconium.
- titanium oxide is represented by TiO
- zirconium oxide is represented by ZrO, TiO and
- Or ZrO content is in the range of 1 to: L0 mol%.
- a multilayer ceramic sintered body having a structure in which a plurality of internal electrodes are stacked inside through a ceramic layer, and the internal electrodes are drawn to a pair of end surfaces facing each other, on the end surface.
- a multilayer ceramic electronic component manufactured by the method according to claim 7 A multilayer ceramic electronic component in which an external electrode is disposed on an end face so as to be electrically connected to an internal electrode exposed on the end face of the ceramic laminate,
- the external electrode contains silicon oxide, boron oxide and iron oxide, respectively, SiO, B 2 O
- the conductive paste according to claim 1 is a conductive paste containing glass for forming a conductor film of a ceramic electronic component, wherein the glass contains silicon oxide, boron oxide, and iron oxide, SiO, BO, And as Fe 2 O, SiO: 30-60 mol%, BO: 10-30m
- the above-described iron oxide is significant in that the decomposition effect of organic substances is particularly large.
- oxides such as manganese oxide and cobalt oxide also have an organic decomposition effect and can be used in some cases, but the effect is small compared to the decomposition effect of iron oxide. .
- Fe O was added at a ratio of 1 to: L0 mol%.
- the acid additive added to the conductive paste of the present invention functions as a network former that forms a glass skeleton, and when the content thereof is less than 30 mol% as SiO, the glass paste
- the content of silicon oxide is SiO and
- the proportion of silicon oxide is in the range of 30 to 60 mol% as SiO! /.
- the acid boron is a network former as in the case of the acid cage, but the content thereof is B 2 O.
- the boron oxide content is in the range of 10 to 30 mol% as B 2 O.
- the glass does not exclude the fact that the glass contains other components other than the above-mentioned acid and silicon oxides and iron oxide. It is also possible to contain these components.
- the glass further contains zinc oxide as ZnO 1 to
- the melting point can be lowered and the firing temperature can be lowered.
- the alkali metal oxide lithium oxide And / or sodium oxide, 5 to 15 mol as Li 2 O and / or Na 2 O
- Z or calcium oxide as BaO and Z or CaO at a content of 5 to 30 mol%, it becomes possible to lower the melting point and lower the firing temperature and to reduce the alkali metal oxide ( It is possible to prevent elution of lithium oxide and Z or sodium oxide), and the present invention can be made more effective.
- 1% means that when the alkali metal oxide strength lithium oxide is included and sodium oxide is not included, Li O is in the range of 5 to 15 mol%.
- Na O in the range of 5-15 mol%
- the alkali metal oxide contains both lithium oxide and sodium oxide, it means that the total of Li 2 O and Na 2 O is in the range of 5 to 15 mol%.
- BaO and Z or CaO: 5 to 30 mol% means that when the alkaline earth metal oxide power barium oxide is included and calcium oxide is not included, BaO is in the range of 5 to 30 mol%, When the alkaline earth metal oxide contains calcium oxide and does not contain a barium oxide, CaO is in the range of 5 to 30 mol%, and the alkaline earth metal oxide contains barium oxide. When both calcium and calcium carbonate are included, it means that the total of BaO and CaO is in the range of 5-30 mol%.
- the glass is further added to aluminum oxide with Al 2 O 3.
- the glass further contains titanium oxide and Z or zirconium oxide as TiO and / or ZrO in a ratio of 1 to L0 mol%.
- the multilayer ceramic electronic component of claim 8 is manufactured by the method for manufacturing a multilayer ceramic electronic component of claim 7, and the external electrode disposed on the end face of the ceramic laminate is formed of a silicon oxide, Boron oxide and iron oxide as SiO, BO and Fe O, respectively, SiO
- FIG. 1 is a cross-sectional view showing a ceramic electronic component (multilayer ceramic capacitor) that works according to an embodiment of the present invention.
- Each glass is obtained by wet-grinding in an alcohol-based organic solvent and intentionally attaching an organic substance to the glass surface.
- a 3-system multilayer ceramic capacitor (multilayer ceramic capacitor element before external electrodes were formed) was prepared.
- the conductive paste produced as described above is applied to the exposed end face of the nickel internal electrode of the multilayer ceramic capacitor element (multilayer ceramic sintered body) by a dubbing method so that the film thickness after firing is reduced.
- the applied paste was applied to a thickness of 70 to 80 m and kept in an oven at 150 ° C. for 15 minutes to dry the applied conductive paste.
- the multilayer ceramic capacitor element after the applied conductive paste was dried was fired in a belt-type matsufur furnace in a nitrogen atmosphere to form external electrodes on the surface of the multilayer ceramic capacitor element.
- the firing conditions were such that the peak temperature was 780 ° C to 840 ° C, the keep time at the peak temperature was about 10 minutes, and the process time until the firing initiation force was completed was 1 hour.
- a Ni plating film was formed on the surface of the external electrode by electrolytic barrel plating, and a Sn plating film was further formed on the surface of the Ni plating film by electrolytic barrel plating.
- the internal electrodes 2a, 2b are formed on both end faces 4a, 4b of the multilayer ceramic capacitor element 1 in which a plurality of internal electrodes 2a, 2b are laminated via the ceramic layer 3.
- the external electrodes 5a and 5b are disposed so as to be electrically connected to each other, and the Ni plating films 6a and 6b and the Sn plating films 7a and 7b are disposed on the surfaces of the external electrodes 5a and 5b.
- a ceramic capacitor was obtained.
- the amount of C was measured with a CS meter (carbon dioxide combustion method analyzer) for the glass samples heat-treated under the conditions, and the amount of C adhering to the glass was compared.
- the amount of C in glass frit that has been wet-ground in water and has no organic matter attached is about 0.10% by weight when measured with a CS meter, so whether or not the organic matter on the glass surface was decomposed by heat treatment Based on this value, glass samples whose C content after heat treatment was 0.15 wt% or less were judged to have an organic decomposition effect ( ⁇ in Tables 1 to 3), and heat treatment was performed. When the measurement result of the later C amount exceeded 0.15% by weight, it was determined that V had no decomposition effect on organic matter (X in Tables 1 to 3).
- the external electrode of the multilayer ceramic capacitor produced as described above was subjected to differential thermal analysis (DTA), and from the differential thermal analysis (DTA) curve, the presence or absence of crystallization was judged by the presence or absence of a crystal peak.
- DTA differential thermal analysis
- Samples D to F have an Fe O content in the range of 1 to 10 mol%, and the amount of C after heat treatment is 0.
- sample Q is provided with the requirements as defined in claim 1 of the present application.
- a multilayer ceramic capacitor manufactured by applying and baking a conductive paste using the glass of sample Q is provided with the requirements as defined in claim 1 of the present application!
- the external electrode was insufficiently dense. This is because the above-mentioned residual C becomes a factor that hinders sintering of the external electrode, and the denseness is insufficient.
- sample S has the following requirements:
- the external electrode of the multilayer ceramic capacitor manufactured by applying and baking the conductive paste using the glass of Sample S was insufficient in density. This is because Fe O has the effect of decomposing organic matter as described above, while glass is bonded.
- the content of Fe 2 O in the glass may be in the range of 1 to: LOmol%.
- Samples A to C and Samples P and R in Tables 1 to 3 are borosilicates containing CuO in the glass. Lucari glass.
- Samples A to C have CuO content in the range of 1 to 10 mol%, and the amount of C after heat treatment is as low as 0.09 to 0.12% by weight. It was confirmed that it was sufficiently decomposed by force heat treatment.
- Sample P had a Cu content of 0.5 mol%, and even after heat treatment, the C content was 0.21% by weight, exceeding the criterion of 0.15% by weight. It was confirmed that organic substances adhering to the glass surface before heat treatment were sufficiently decomposed by heat treatment.
- the external electrodes of the multilayer ceramic capacitor manufactured by applying and baking a conductive paste using the glass of Sample P had insufficient density. This is thought to be because the above-mentioned residual C is a factor that hinders sintering of the external electrode, resulting in insufficient denseness.
- Sample R had a sufficient organic substance decomposition effect with a CuO content as high as l mol% and a C content after heat treatment of 0.1 wt%. .
- the external electrode of the multilayer ceramic capacitor produced by applying and baking a conductive paste using the glass of Sample R was insufficient in density.
- CuO has the effect of decomposing organic matter as described above, but also has the property of easily crystallizing glass, and the sintered body of Cu, which is a conductive component in the conductive paste, can be obtained. It seems that the densification of the external electrode was hindered because it acted to inhibit
- Sample G (a sample having the requirements specified in claim 1 of the present application) is a glass containing 2.5 mol% of both CuO and Fe 2 O, and the C amount after the heat treatment is 0.12
- Samples H to 0 are made of glass containing either CuO or FeO! ⁇
- At least one compounding ratio of silicon oxide, boron oxide, alkali metal oxide, alkaline earth metal oxide, acid aluminum, titanium oxide, and acid zirconium Glass made different from glass.
- Fe 2 O is the range specified in claim 1 of the present application.
- the C amount after the heat treatment is 0.15% by weight or less, and there is sufficient organic substance decomposition effect. It was confirmed that among the samples ⁇ to 0, the amount of C after heat treatment was 0.15% by weight even in the case of H, J, L, and M samples using a glass containing 5 mol% of CuO. The following were confirmed to have a sufficient effect of decomposing organic matter.
- Sample F in Table 1 and Sample K in Table 2 are not mixed with alkaline earth metals BaO and CaO, but contain FeO within the scope of the present invention.
- Samples N and O in Table 2 have a total range of 5 to 15 for Li 0 and Na 2 O, which are alkali metals.
- samples L and M of the examples in Table 2 that do not contain FeO but contain CuO are also alkali metals.
- the total range of Li 0 and Na O is out of the range of 5 to 15 mol%.
- an external electrode of a multilayer ceramic capacitor manufactured by applying and baking a conductive paste using Cu, H, J, L, and M glass containing CuO in a predetermined range is also included. It was confirmed that it has sufficient denseness. Glass crystallization was not observed on the external electrode.
- Samples T and U are replaced with CuO and FeO used in samples ⁇ ⁇ and ⁇ , and MnO and
- the amount of C remaining after heat treatment is 0.25% by weight and 0.23%.
- the conductive paste of the present invention is not limited to the multilayer ceramic capacitor, and the multilayer ceramic inductor, the multilayer LC
- the present invention can be widely applied to various ceramic electronic parts having a conductor film formed by applying and baking a conductive paste, such as composite parts and multilayer substrates.
- the present invention is not limited to the above examples, the type of conductive material (conductive powder) constituting the conductive paste, the type of organic vehicle blended in the conductive paste, and the baking of the conductive paste In terms of conditions and the like, various applications and modifications can be made within a range that does not impair the effects of the invention.
- the conductive paste of the present invention contains iron oxide as an oxide of a metal element whose valence changes in the borosilicate glass blended in the conductive paste.
- the oxygen component reacts with the organic matter adhering to the glass surface during firing, so that the organic matter can be efficiently decomposed, and a conductor film having excellent denseness can be efficiently formed. .
- the present invention provides a multilayer ceramic capacitor, a multilayer ceramic inductor, a multilayer ceramic inductor, It can be widely applied to various ceramic electronic parts equipped with conductor films formed by baking conductive paste, such as LC composite parts and multilayer substrates.
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- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
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Abstract
La présente invention concerne une pâte électroconductrice contenant un verre permettant à un matériau organique fixé sur la surface du verre de se décomposer de façon efficace, indépendamment du type d’atmosphère utilisé dans la cuisson de la pâte et permettant ainsi la formation d’un film conducteur ayant une structure extrêmement proche ; la présente invention concerne également un procédé de fabrication de pièces électroniques céramiques laminées utilisant la pâte électroconductrice et des pièces électroniques céramiques laminées produites au moyen de ce procédé. La présente invention concerne une pâte électroconductrice contenant un verre, le verre comprenant un oxyde de fer en tant qu'oxyde de métal pouvant présenter une pluralité d'indices de valence. La pâte électroconductrice précédente, dans laquelle le verre comprend en outre un oxyde de zinc en une quantité comprise entre 1 et 20 % molaire en termes de ZnO, un oxyde de métal alcalin et un oxyde de métal alcalino terreux et un oxyde d’aluminium en une quantité comprise entre 1 et 10 % molaire en termes de Al2O3 et enfin un oxyde de titane et/ ou un oxyde de zirconium.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP2005-046154 | 2005-02-22 | ||
JP2005046154 | 2005-02-22 |
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WO2006090551A1 true WO2006090551A1 (fr) | 2006-08-31 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/JP2006/301133 WO2006090551A1 (fr) | 2005-02-22 | 2006-01-25 | Pate electroconductrice, pieces electroniques en ceramique laminees et leur procede de fabrication |
Country Status (1)
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WO (1) | WO2006090551A1 (fr) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008099771A1 (fr) * | 2007-02-14 | 2008-08-21 | Murata Manufacturing Co., Ltd. | Condensateur céramique stratifié |
US7751175B2 (en) | 2007-02-14 | 2010-07-06 | Murata Manufacturing Co., Ltd. | Multilayer ceramic capacitor and method for manufacturing the same |
JP2010173904A (ja) * | 2009-01-30 | 2010-08-12 | Asahi Glass Co Ltd | ガラス組成物およびそれを用いた導電性ペースト |
JP2014170874A (ja) * | 2013-03-05 | 2014-09-18 | Tdk Corp | セラミック積層電子部品 |
WO2015045721A1 (fr) * | 2013-09-27 | 2015-04-02 | 株式会社村田製作所 | Composant électronique multicouches en céramique |
JP6075460B2 (ja) * | 2013-09-27 | 2017-02-08 | 株式会社村田製作所 | 積層セラミック電子部品 |
US11302480B2 (en) * | 2019-07-22 | 2022-04-12 | Tdk Corporation | Ceramic electronic device with varying roughness terminal electrode |
US11443899B2 (en) | 2020-05-26 | 2022-09-13 | Murata Manufacturing Co., Ltd. | Multilayer ceramic electronic component and method of manufacturing the same |
WO2023002921A1 (fr) * | 2021-07-21 | 2023-01-26 | 京セラ株式会社 | Pâte conductrice pour former une électrode |
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JPH03150234A (ja) * | 1989-06-09 | 1991-06-26 | Asahi Glass Co Ltd | 抵抗体ペースト及びセラミックス基板 |
JP2001122639A (ja) * | 1999-10-21 | 2001-05-08 | Tdk Corp | ガラスフリットおよび導体ペースト組成物ならびに積層コンデンサ |
JP2002163928A (ja) * | 2000-09-14 | 2002-06-07 | Shoei Chem Ind Co | ガラス組成物およびこれを用いた厚膜ペースト |
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Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008099771A1 (fr) * | 2007-02-14 | 2008-08-21 | Murata Manufacturing Co., Ltd. | Condensateur céramique stratifié |
US7751175B2 (en) | 2007-02-14 | 2010-07-06 | Murata Manufacturing Co., Ltd. | Multilayer ceramic capacitor and method for manufacturing the same |
JP2010173904A (ja) * | 2009-01-30 | 2010-08-12 | Asahi Glass Co Ltd | ガラス組成物およびそれを用いた導電性ペースト |
JP2014170874A (ja) * | 2013-03-05 | 2014-09-18 | Tdk Corp | セラミック積層電子部品 |
WO2015045721A1 (fr) * | 2013-09-27 | 2015-04-02 | 株式会社村田製作所 | Composant électronique multicouches en céramique |
CN105556626A (zh) * | 2013-09-27 | 2016-05-04 | 株式会社村田制作所 | 层叠陶瓷电子部件 |
JP6024830B2 (ja) * | 2013-09-27 | 2016-11-16 | 株式会社村田製作所 | 積層セラミック電子部品 |
JP6075460B2 (ja) * | 2013-09-27 | 2017-02-08 | 株式会社村田製作所 | 積層セラミック電子部品 |
KR101786486B1 (ko) * | 2013-09-27 | 2017-10-18 | 가부시키가이샤 무라타 세이사쿠쇼 | 적층 세라믹 전자부품 |
US10008326B2 (en) | 2013-09-27 | 2018-06-26 | Murata Manufacturing Co., Ltd. | Multilayer ceramic electronic component having an inorganic matter at an interface between an external electrode and the ceramic body |
US10522287B2 (en) | 2013-09-27 | 2019-12-31 | Murata Manufacturing Co., Ltd. | Multilayer ceramic electronic component having inorganic matter at an interface between an external electrode and the ceramic body |
US11302480B2 (en) * | 2019-07-22 | 2022-04-12 | Tdk Corporation | Ceramic electronic device with varying roughness terminal electrode |
US11443899B2 (en) | 2020-05-26 | 2022-09-13 | Murata Manufacturing Co., Ltd. | Multilayer ceramic electronic component and method of manufacturing the same |
WO2023002921A1 (fr) * | 2021-07-21 | 2023-01-26 | 京セラ株式会社 | Pâte conductrice pour former une électrode |
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