WO2006085528A1 - 固体撮像素子及びその製造方法 - Google Patents
固体撮像素子及びその製造方法 Download PDFInfo
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- WO2006085528A1 WO2006085528A1 PCT/JP2006/302061 JP2006302061W WO2006085528A1 WO 2006085528 A1 WO2006085528 A1 WO 2006085528A1 JP 2006302061 W JP2006302061 W JP 2006302061W WO 2006085528 A1 WO2006085528 A1 WO 2006085528A1
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/201—Filters in the form of arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
- G02B3/0006—Arrays
- G02B3/0012—Arrays characterised by the manufacturing method
- G02B3/0018—Reflow, i.e. characterized by the step of melting microstructures to form curved surfaces, e.g. manufacturing of moulds and surfaces for transfer etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
- H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
- H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
- H04N25/134—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements based on three different wavelength filter elements
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- G—PHYSICS
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- G02B3/00—Simple or compound lenses
- G02B3/0006—Arrays
- G02B3/0037—Arrays characterized by the distribution or form of lenses
- G02B3/0056—Arrays characterized by the distribution or form of lenses arranged along two different directions in a plane, e.g. honeycomb arrangement of lenses
Definitions
- the present invention relates to a solid-state imaging device typified by photoelectric conversion devices such as CMOS and CCD, and a method for manufacturing the same, and more particularly to a color filter formed corresponding to the photoelectric conversion device.
- the solid-state imaging device has a color filter paired with the photoelectric conversion device for colorization.
- a method for forming a color filter a method of forming a pattern by a photolithography process is generally used (see, for example, JP-A-11-68076).
- the region (opening) where the photoelectric conversion element of the solid-state image sensor contributes to photoelectric conversion depends on the size and the number of pixels of the solid-state image sensor, but is 20 to Since it is limited to about 40% and the small aperture leads to a decrease in sensitivity as it is, it is common to form a condensing microlens on the photoelectric conversion element to compensate for this. .
- the film thickness of the color filter must be increased.
- the corner of the pattern is increased as the pixel becomes finer.
- the resolution tends to decrease, such as rounding.
- the color filter is made of a photosensitive resin added with a colored pigment. If the pigment concentration in one color filter layer increases, the light required for the photocuring reaction does not reach the bottom of the color filter layer, so curing does not occur. The problem is that it becomes sufficient, and it peels off during the development process in photolithography, causing pixel defects.
- the aperture ratio of the microlens associated with this high-definition solid-state image sensor that is, the sensitivity is decreased
- the image quality degradation due to increased noise such as flare and smear
- the color filter 1 is provided with a flattening layer formed on a semiconductor substrate in order to improve adhesion to the base, but the above-mentioned distance under the lens is reduced.
- the color resist used in the photolithography process has poor adhesion to the semiconductor substrate and peels off during development, it has been difficult to eliminate the flat layer.
- the color filter is generally composed of three primary color filters of blue, green, and red.
- the green resist that forms the green filter becomes a problem in the design of a solid-state imaging device that has a low refractive index after curing due to the nature of the color material and the red and blue resists that form the red and blue filters. It was. In other words, it is difficult to select a color resist for use in the photolithography process because of the restriction that it requires photosensitivity, and thus it is difficult to select a resist having a high refractive index after curing. Due to the difference in refractive index, there are problems that the condensing effect by the microlens is different and the reflectance varies.
- a color filter formed by a conventional photolithography process has problems that sufficient resolution cannot be obtained, residue is likely to remain, and pixel peeling is likely to occur. There was a problem of deteriorating characteristics. In addition, there is a problem that the distance between the color filter and the photoelectric conversion element and the distance between the microlens and the photoelectric conversion element (distance below the lens) are large.
- An object of the present invention is to provide a color film that is formed without causing residue peeling or the like if the pattern shape is poor, and having no variation in reflectance between pixels with a small distance from the photoelectric conversion element. It is to provide a solid-state imaging device provided with a sensor.
- Another object of the present invention is to provide a method for manufacturing such a solid-state imaging device.
- photoelectric conversion elements that are two-dimensionally arranged on a semiconductor substrate, and a plurality of colors that are arranged on the semiconductor substrate corresponding to the photoelectric conversion elements, respectively.
- a method of manufacturing a solid-state imaging device having a color filter having a filter pattern force, wherein the plurality of color filter patterns are formed by sequentially patterning a plurality of color filter layers Provided is a method for manufacturing a solid-state imaging device, comprising: a step of forming a filter pattern to be formed at least first using dry etching; and a step of forming a remaining filter pattern using photolithography. Is done.
- photoelectric conversion elements that are two-dimensionally arranged on a semiconductor substrate, and a plurality of colors that are arranged on the semiconductor substrate corresponding to each of the photoelectric conversion elements
- a solid-state image sensor manufacturing method comprising a color filter having a filter pattern and a planarization layer formed on a part or all of the semiconductor substrate, wherein the plurality of color filter patterns are a plurality of colors.
- a filter layer is formed by sequentially patterning, and at least one of the plurality of color filter patterns is first formed, and an unnecessary portion of one color filter layer and a flat layer below the dry filter layer are dried. Characterized in that it comprises a step of forming by etching and a step of forming another filter pattern by using photolithographic.
- a photoelectric conversion element arranged two-dimensionally on a semiconductor substrate
- the solid-state imaging device having a color filter having a plurality of filter pattern forces disposed on the semiconductor substrate corresponding to each of the photoelectric conversion elements, the plurality of color filter patterns are thermally cured.
- a solid-state imaging device comprising one filter pattern containing fat and another filter pattern containing photocured rosin.
- photoelectric conversion elements that are two-dimensionally arranged on a semiconductor substrate, and a plurality of colors that are arranged on the semiconductor substrate corresponding to the photoelectric conversion elements, respectively.
- the filter pattern having the largest area among the plurality of color filter patterns includes thermally cured resin, and the other filter patterns are light cured
- a solid-state imaging device characterized by containing fat is provided.
- a solid-state imaging device comprising a color filter having a filter pattern of the above and a planarization layer formed on a part or all of the semiconductor substrate, wherein the planarization layer under the one color filter pattern is
- a solid-state imaging device characterized in that a thickness is different between a lower part of a filter pattern of one color and a lower part of a filter pattern of another color.
- a photoelectric conversion element two-dimensionally arranged on a semiconductor substrate, and a plurality of colors arranged on the semiconductor substrate corresponding to each of the photoelectric conversion elements A solid-state imaging device comprising a color filter having the above filter pattern and a planarization layer formed on a part or all of the semiconductor substrate, wherein the color filter is formed on the semiconductor substrate.
- a solid-state imaging device characterized by including both a filter pattern formed through a layer and a filter pattern formed directly.
- a photoelectric conversion element two-dimensionally arranged on a semiconductor substrate, and a plurality of colors arranged on the semiconductor substrate corresponding to each of the photoelectric conversion elements A solid-state image sensor comprising a color filter having a filter pattern of the above and a planarization layer formed on a part or all of the semiconductor substrate, wherein the filter of one color among the one-color filter pattern
- a solid-state imaging device is provided in which the pattern includes heat-cured resin and the remaining color filter patterns include light-cured resin.
- FIG. 1A is a process cross-sectional view illustrating a forming method for patterning by dry etching used in the present invention.
- FIG. IB is a process cross-sectional view illustrating a forming method for patterning by dry etching used in the present invention.
- FIG. 1C is a process cross-sectional view illustrating a forming method for patterning by dry etching used in the present invention.
- FIG. 1D is a process cross-sectional view illustrating a forming method for patterning by dry etching used in the present invention.
- FIG. 1E is a process cross-sectional view illustrating a forming method for patterning by dry etching used in the present invention.
- FIG. 2A is a process cross-sectional view illustrating a forming method for patterning by photolithography used in the present invention.
- FIG. 2B is a process cross-sectional view illustrating a forming method for patterning by photolithography used in the present invention.
- FIG. 2C is a process cross-sectional view illustrating a forming method in which patterning is performed by photolithography used in the present invention.
- FIG. 3 is a partial cross-sectional view of a solid-state imaging device obtained by a manufacturing method according to an embodiment of the present invention.
- FIG. 4A is a cross-sectional view illustrating the method of manufacturing the solid-state imaging device according to the embodiment of the present invention in the order of steps.
- FIG. 4B is a cross-sectional view illustrating the method of manufacturing the solid-state imaging device according to the embodiment of the present invention in the order of steps.
- FIG. 4C is a cross-sectional view showing the method of manufacturing the solid-state imaging device according to the embodiment of the present invention in the order of steps.
- FIG. 4D is a cross-sectional view showing the method of manufacturing the solid-state imaging device according to the embodiment of the present invention in the order of steps.
- FIG. 4E is a cross-sectional view showing the method of manufacturing the solid-state imaging element according to the embodiment of the present invention in the order of steps.
- FIG. 4F is a cross-sectional view showing the method of manufacturing the solid-state imaging element according to the embodiment of the present invention in the order of steps.
- FIG. 4G is a cross-sectional view showing the method of manufacturing the solid-state imaging device according to the embodiment of the present invention in the order of steps.
- FIG. 5 is a partial plan view of the solid-state imaging device shown in FIG.
- FIG. 6 is a partial cross-sectional view of a solid-state imaging device according to another embodiment of the present invention.
- FIG. 7 is a partial cross-sectional view of a solid-state imaging device according to another embodiment of the present invention.
- FIG. 8A is a cross-sectional view showing a method for manufacturing a solid-state imaging device according to another embodiment of the present invention in the order of steps.
- FIG. 8B is a cross-sectional view showing the method of manufacturing the solid-state imaging device according to another embodiment of the present invention in the order of steps.
- FIG. 8C is a cross-sectional view showing the method of manufacturing the solid-state imaging device according to another embodiment of the present invention in the order of steps.
- FIG. 8D is a cross-sectional view showing the method of manufacturing the solid-state imaging element according to another embodiment of the present invention in the order of steps.
- FIG. 8E is a cross-sectional view showing the method of manufacturing the solid-state imaging device according to another embodiment of the present invention in the order of steps.
- FIG. 8F is a cross-sectional view showing the method of manufacturing the solid-state imaging device according to another embodiment of the present invention in the order of steps.
- FIG. 8G is a cross-sectional view showing the method of manufacturing the solid-state imaging device according to another embodiment of the present invention in the order of steps.
- FIG. 8H is a cross-sectional view showing the method of manufacturing the solid-state imaging device according to another embodiment of the present invention in the order of steps.
- FIG. 81 is a cross-sectional view showing a method of manufacturing a solid-state imaging device according to another embodiment of the present invention in the order of steps.
- FIG. 9A is a cross-sectional view illustrating, in order, the method of manufacturing a solid-state imaging device according to still another embodiment of the present invention.
- FIG. 9B is a cross-sectional view showing the method of manufacturing the solid-state imaging device according to still another embodiment of the present invention in the order of steps.
- FIG. 9C shows a method of manufacturing a solid-state imaging device according to still another embodiment of the present invention. It is sectional drawing shown in order.
- FIG. 9D is a cross-sectional view showing a method for manufacturing a solid-state imaging device according to still another embodiment of the present invention in order of steps.
- FIG. 9E is a cross-sectional view showing a method of manufacturing a solid-state imaging device according to still another embodiment of the present invention in the order of steps.
- FIG. 10 is a photomicrograph showing green patterns of various pixel sizes formed on a test pattern substrate via a planarization layer.
- FIG. 11 is a photomicrograph showing green patterns of various pixel sizes formed on a test pattern substrate via a planarization layer.
- Fig. 12 is a photomicrograph of a Darin pattern with a size of 1.5 m pixels formed on a glass substrate by photolithography.
- Fig. 13 is a photomicrograph of a 2. O / z m pixel size Darien pattern formed on a glass substrate by photolithography.
- FIG. 14 is a micrograph of a 2.0 m pixel size green pattern formed on a glass substrate by etching. BEST MODE FOR CARRYING OUT THE INVENTION
- the filter pattern formed at least first among the filter patterns of a plurality of colors is formed using dry etching, and the remaining filter pattern Is formed using photolithography.
- the first color filter pattern is formed by dry etching, and the remaining color filter patterns are formed by photolithography.
- the first color filter pattern is formed using dry etching, and the second and subsequent color filter patterns are formed using photolithography.
- the pattern of the filter pattern of the first color can be obtained in the patterning process of the color filter after the second color by photolithography.
- the surface will not be rough, and the second and subsequent filter patterns
- the filter pattern formed by dry etching serves as an anchor, it is possible to prevent the filter pattern formed by the photolithography method from dropping off.
- the accuracy of the filter pattern formed first greatly affects the accuracy of the entire color filter
- the accuracy of the entire color filter can be improved by using the dry etching method for at least the filter pattern formed first. Therefore, a solid-state imaging device having a large number of pixels without color unevenness can be obtained.
- the first pattern forming process force color filter layer is patterned using dry etching, high-definition patterning is performed. Since a possible semiconductor resist or the like can be freely selected as a mask, it is possible to form a color filter having a fine pattern with a good shape and no residue without causing pixel peeling. That is, in such a method, a predetermined filter pattern having good adhesion to the substrate can be formed first by dry etching one layer of the heat-cured color filter. Even if another filter pattern is formed by photolithography, the adjacent filter pattern is prevented from being peeled off due to the first formed filter pattern having good adhesion. Ma In addition, since the filter pattern formed first is completely cured, it cannot be peeled off during the subsequent development process of photolithography!
- the filter pattern formed at least first among the filter patterns of a plurality of colors is formed between unnecessary portions of the filter pattern and lower layers thereof.
- a flat layer is formed by dry etching, and another filter pattern is formed by photolithography.
- the filter patterns have different thicknesses because the spectral characteristics required for each color are different and the rosin pigment used is different.
- the filter pattern formed by dry etching does not need to have photosensitivity, the pigment concentration can be increased. Therefore, it can be made thinner than the filter pattern formed by photolithography.
- the difference in thickness differs depending on the filter pattern, particularly the difference in thickness from the filter pattern formed by photolithography. It is possible to provide a solid-state imaging device including a color filter having a small distance from the photoelectric conversion element and the surface step force due to color.
- the distance between the high-definition, the edge force with which the residue does not disappear is smooth, and the surface level difference due to the color is small.
- a method for manufacturing a solid-state imaging device including a color filter is provided.
- the thickness of the flat layer under the color filter layer in the unnecessary portion is different from the thickness of the flat layer under the filter pattern formed by photolithography. Can be made.
- the unnecessary color filter layer and the flat layer below it can be removed by dry etching until reaching the semiconductor substrate.
- the filter pattern having the widest area among the filter patterns of multiple colors can be formed using dry etching. .
- the filter pattern with the widest area is patterned by dry etching, the filter pattern by photolithography can be efficiently retained, and the accuracy of the filter pattern with the widest area is greatly greater than the accuracy of the entire color filter. Because it affects.
- the filter pattern has a multilayer structure, it is also effective if the filter pattern provided in the lower layer (closer to the semiconductor substrate) is provided by dry etching.
- the color filter layer patterned by dry etching contains at least a thermosetting resin, and the color filter layer patterned by photolithography is at least photocurable. It can contain fat.
- the filter pattern containing a thermosetting resin formed into a predetermined pattern by dry etching is firmly attached to the semiconductor substrate or the flat substrate layer, the filter pattern does not peel off. .
- the color filter layer containing the thermosetting resin can increase the concentration of the color material contained therein, the color filter can be thinned, preventing color mixing of incident light, and the solid-state image sensor. Thinning can be achieved.
- the multi-color filter pattern includes one filter pattern containing thermally cured resin and another filter pattern containing photocured resin. It is characterized by including.
- the color filter has a color filter pattern containing a thermally cured resin, so that the adhesion to the semiconductor substrate is eliminated even without a planarizing layer. Therefore, it is possible to obtain a solid-state imaging device with a small lens distance by forming it directly on the semiconductor substrate without forming a flat layer.
- thermosetting resin can be used, the concentration of the colorant in the solid content can be increased, so that the color filter can be made thinner, preventing color mixing of the incident light, and thus the color filter. It is possible to obtain a solid-state imaging device having a small sensitivity with a small distance from the photoelectric conversion device and a small distance under the microlens. In addition, uneven color due to the shape of the pattern edge of the color filter can be eliminated.
- the multi-color filter pattern includes a green filter pattern, and the resin contained in the green filter pattern has a higher refractive index than the resin contained in other filter patterns. I can do it. By doing so, it is possible to approximate the refractive index of one pattern of filters of a plurality of colors, thereby making it possible to equalize the light condensing effect by the microlens, so that a good solid-state imaging device can be obtained.
- a layer having a high refractive index added with a resin can be patterned using dry etching to provide a smooth filter on the surface. A pattern can be obtained.
- a flat layer can be formed on the color filter, and a microlens can be formed on the flat layer.
- a microlens can be formed on the color filter, and the peripheral portion of the microlens, that is, the lower portion of the microlens can be constituted by a part of the color filter, that is, the upper portion of the color filter.
- the solid-state imaging device includes a plurality of color filter patterns,
- the filter area with the largest area includes heat-cured resin, and other filter patterns include light-cured resin.
- the filter area having the largest area contains the thermally cured resin, it is possible to effectively maintain the adhesion to the semiconductor substrate.
- the flat surface layer can be eliminated, a solid-state imaging device with a small lens distance can be obtained.
- the use of heat-cured rosin can increase the concentration of the coloring material in the solid content, so that the color filter can be formed thinly, preventing color mixing of incident light, and thus the color filter. It is possible to obtain a solid-state imaging device having a small sensitivity with a small distance from the photoelectric conversion element and a small distance under the microlens. In addition, uneven color caused by the shape of the pattern edge of the color filter can be eliminated.
- the photoresist does not have sufficient adhesion to the semiconductor substrate, and there arises a problem that it peels off during development.
- the heat-cured filter pattern is adjacent to the heat-cured filter pattern, and the heat-cured filter pattern serves as an anchor. be able to. Therefore, the color filter can be formed directly without providing a planarizing layer on the semiconductor substrate. Accordingly, the distance between the color filter and the photoelectric conversion element and the distance between the microlens and the photoelectric conversion element (lens-under distance) can be reduced.
- the planarization layer under the filter patterns of a plurality of colors has a lower part of the filter pattern of one color and a filter pattern of the other color. It is characterized in that the thickness is different from that of the part.
- the solid-state imaging device configured as described above provides a solid-state imaging device including a color filter having a uniform surface thickness by absorbing different thicknesses between filter patterns by the flattening layer. Can do.
- the filter patterns of a plurality of colors include one pattern of the green filter, and the resin contained in the green filter pattern has a higher refractive index than the resin contained in other filter patterns. Can be. [0061] In this way, by making the refractive index of the resin contained in the green filter pattern higher than that of the resin contained in other filter patterns, the refractive index between the filter patterns can be approximated by the microlens. It is possible to obtain a solid-state imaging device having the same light collecting effect on each color filter.
- a layer with a high refractive index added with a resin can be patterned using dry etching to provide a smooth filter on the surface. A pattern can be obtained.
- a microlens is provided on the color filter, either directly or indirectly, corresponding to each of the photoelectric conversion elements, and the peripheral portion (lower part) of the microlens is a part of the color filter. It is possible to adopt a configuration composed of a part (upper part).
- both the filter pattern in which the color filter is formed on the semiconductor substrate via the planarization layer and the filter pattern formed directly are used. It is characterized by including.
- the flattening layer absorbs different thicknesses between the filter patterns, thereby providing a color filter with a uniform surface thickness and minimizing the flattening layer.
- a solid-state imaging device having a small distance between the color filter and the photoelectric conversion device can be provided.
- the filter pattern of one color among the filter patterns of a plurality of colors includes a thermally cured resin, and the filter patterns of the remaining colors are photocured. It contains rosin.
- the filter pattern containing the thermosetting resin is persistently adhered to the semiconductor substrate or the flat substrate layer, and therefore the filter pattern does not peel off.
- the color filter resist containing thermosetting resin can increase the concentration of the color material contained therein, the color filter can be made thinner, preventing color mixing of incident light, Thinning can be achieved.
- the forming method of patterning by dry etching used in the present invention is to form a resin pattern in the shape of the target object on the target object forming layer and perform dry etching using this as a mask.
- This is a construction method in which the shape is transferred to the object-forming layer to perform patterning.
- a color filter layer 32 is formed as an object forming layer on a base material 31 (FIG. 1A), and a photosensitive resin layer 33 is formed on the color filter layer 32. (FIG. 1B), and then patterning the photosensitive resin layer 33 to form a resin pattern 34 in the shape of the target object (FIG. 1C).
- this resin pattern 34 as a mask, the resin pattern The shape of 34 is transferred to the color filter layer 32 (Fig. 1D), and finally the target filter pattern 35 is formed (Fig. 1E).
- the formation method of patterning by photolithography used in the present invention is to form a photosensitive object formation layer, pattern expose this through a mask, photocure, and develop to remove unnecessary parts.
- This is a method for obtaining a puttered target by removing Specifically, as shown in FIGS. 2A to 2C, a color filter layer 42 as an object forming layer is formed on a base material 41 with a photosensitive resin composition, and a mask (not shown) is formed thereon. After the pattern is exposed to light, it is cured (Fig. 2B), the unnecessary part 42b is removed with a developer to leave the photocured part 42a, and heat curing is performed as necessary to form the filter pattern 43, which is the target product. ( Figure 2C).
- FIG. 3 is a partial cross-sectional view of a solid-state imaging device according to an embodiment of the present invention.
- 4A to 4G are partial cross-sectional views for explaining the manufacturing method of the solid-state imaging device shown in FIG. 3 in the order of steps.
- FIG. 5 is a plan view of FIG.
- a solid-state imaging device includes a semiconductor substrate including a photoelectric conversion element 11 that is two-dimensionally arranged and has a function of converting light into an electrical signal. 10 is provided with a color filter 12 for color-separating incident light, a flat layer 13 for flattening the surface of the color filter 12, and a plurality of microlenses 14 disposed on the flat layer 13. It is configured. The flat layer 13 may not be provided in some cases.
- Such a solid-state imaging device can be manufactured by the method shown in FIGS.
- a first color resist layer 22 is formed on a semiconductor substrate 20 (see FIG. 4A) having photoelectric conversion elements 21 arranged two-dimensionally.
- the first color resist layer 22 is formed by applying a first resin dispersion containing a thermosetting resin as a main component and dispersing a pigment on the semiconductor substrate 20 and thermosetting it.
- a predetermined grease pattern 23 is formed on the first color resist layer 22 by photolithography, for example, as shown in FIG. 4C.
- the resin pattern 23 for example, acrylic resin, epoxy resin, polyimide resin, phenol novolac resin, and other photosensitive resins can be used singly or as a mixture or copolymerized.
- Exposure tools used in the photolithography process for patterning photosensitive resin include steppers, aligners, and mirror processing aligners. Color filters for solid-state image sensors that require high pixels and miniaturization are required. Usually, a stepper is used for the formation.
- the first color resist layer 22 is patterned by dry etching to form a first filter pattern 24a as shown in FIG. 4D.
- a dry etching method for example, ECR, parallel plate magnetron, DRM, ICP, or dual frequency type RIE can be used.
- the gas used for dry etching may be a reactive (oxidative 'reducing) gas, that is, an etching gas.
- a reactive (oxidative 'reducing) gas that is, an etching gas.
- a halogen element such as fluorine, chlorine, or bromine has a molecular structure.
- a gas containing oxygen or an element such as oxygen may be used as well as, but not limited to.
- the second color resist layer was patterned by dry etching or photolithography as in the first filter pattern 24a, and as shown in FIG. 4E. As shown, a second filter pattern 24b is formed.
- FIG. 5 is a plan view showing the arrangement of each filter pattern of the color filter 25.
- a G (green) filter is provided every other pixel, and an R (red) filter and a B (blue) filter are installed every other line between the G filters. It is a wheel array.
- the cross-sectional view along AA 'in Fig. 5 is shown in Fig. 3.
- the planarizing layer 26 is formed on the color filter 25 formed as described above.
- a resin containing one or more resins such as acrylic, epoxy, polyimide, phenol novolac, polyester, urethane, melamine, urea, and styrene. Can do. Note that the planarization layer 26 is not necessarily provided.
- a microlens 27 is formed on the planarizing layer 26 by a thermal reflow method, which is a well-known technique, to complete a solid-state imaging device.
- the first filter pattern 24a is formed by patterning by dry etching after the first color resist layer 22 is completely thermoset.
- the adhesion to the semiconductor substrate 20 is very strong.
- the second and third filter patterns are adjacent to each other. Since it is held by the first filter pattern 24a, the adhesion of the color filter 25 is improved as a whole. Therefore, it can be formed directly on the semiconductor substrate 20 without providing a planarizing layer.
- the first filter pattern 24a has the largest area among the filter patterns of a plurality of colors.
- the area of the filter pattern having the largest area can be, for example, 1 to 2 times the area of the filter pattern having the smallest area.
- the filter pattern that occupies the widest area can be accurately patterned and the entire color filter can be patterned. Accuracy is improved.
- the drain filter pattern is the largest and often the area!
- a color film having a high pigment concentration that is, a low content of rosin involved in curing.
- a patterning method that patterns the pattern layer by dry etching, it is possible to form a color filter that is insufficiently cured by a normal photolithography process, even if it is a single layer of color filter that does not peel off. Can do.
- the edge shape of the filter becomes poor, and the force that causes image unevenness. If the pattern is formed by dry etching, the edge shape becomes good and eliminates image unevenness. it can. Specifically, this effect is obtained in the case of a red filter pattern or a drain filter pattern.
- the edge shape of the filter becomes poor when the size of the color filter becomes minute, and the edge shape becomes good by using force dry etching that causes image unevenness. If the first color filter is formed in a good shape, the shape of the color filter for the second and subsequent colors will be improved and peeling will not easily occur.
- the first filter pattern is formed by a patterning method using dry etching, it adheres to the underlying substrate, the residue does not peel off, and the filter pattern has a high resolution. Then, if the next filter pattern is formed by the patterning method using an efficient photolithographic method with few processes, the filter pattern force that is formed first will be firmly adhered to the substrate with an accurate pattern. Therefore, even with the patterning method using a photolithography method, it is possible to accurately form a filter pattern without peeling.
- a stepper device using exposure light having a light wavelength of 365 nm is used.
- 365nm exposure light is blue photosensitive resin. Since the bottom of the blue photosensitive resin is not sufficiently cured, the blue filter is easier to peel off than other color filters in the development process.
- the adhesion is poor like a blue filter! /
- the pattern is formed by a photolithography method.
- the green pattern retains the blue filter, the blue filter can be peeled off and its shape can be improved.
- the color arrangement of the image sensor is the Bayer arrangement IJ shown in Fig. 5, and one cell is composed of two green pixels, one blue and one green. Therefore, if the green filter is formed by dry etching, the other two colors can be supported by the green filter, and the shape and adhesion of the other two colors can be improved.
- the inventors of the present invention directly formed a green pattern of various pixel sizes on a test pattern substrate and through a flat layer by a photolithography method and an etching method, and their adhesion, The presence or absence of peeling was evaluated. The results are shown in the table below.
- the filter pattern of the first color is formed by the etching method and the filter pattern of the second color or later is formed by the photolithography method, the filter of the second color or later is obtained by the filter pattern of the first color having good adhesion. Since the pattern is retained, it can be seen that a color filter with good overall adhesion can be obtained.
- FIGS. Fig. 10 shows a pattern formed by photolithography
- Fig. 11 shows a pattern formed by etching.
- peeling occurs at a pixel size of 1.5 m as shown by mark B in FIG. 10
- a size of 1.0 m is obtained as shown in FIG. It can be seen that the pixel is completely peeled off.
- Figures 12 and 13 are photomicrographs of micropatterns of a 1.5 m pixel size and a 2.0 m pixel size, respectively, and Fig. 14 is an etching method 2 A micrograph of a green pattern of O / zm pixel size is shown.
- the resin contained in the green filter pattern may have a higher refractive index than the resin contained in the blue and red filter patterns.
- the refractive index of the green filter pattern is lower than the refractive index of other filter patterns, there has been a problem that the reflectance of the color filter is not uniform.
- Green filter putter In order to increase the refractive index of the resin, it is sufficient to use a resin having a high refractive index.
- a resin having a high refractive index that has a narrow selection range is selected. It was difficult.
- the green filter pattern can be formed by dry etching without depending on photolithography, so that the thermosetting resin can be used as a resin for the green filter pattern. It is possible to select from a wide range of materials having a high refractive index.
- the resin contained in the green filter pattern has a higher refractive index than the resin contained in the blue and red filter patterns, so that the refraction of one pattern of the three colors of filters can be achieved. Since the rate can be approximated and the condensing effect by the microlens can be made equivalent, a good solid-state imaging device can be obtained.
- a smooth surface filter can be obtained by patterning a layer to which a resin having a high refractive index is added using dry etching. A pattern can be obtained.
- the same refractive index can be obtained when it becomes a filter pattern, so that the refractive index of the resin contained in the blue and red filter patterns is 0.05-0.
- a resin having a refractive index as high as about 2 is preferably used.
- the resin contained in the blue and red filter patterns is acrylic, epoxy, polyimide, phenol novolac, polyester, urethane, having a refractive index of 1.5 to 1.6.
- phenol resin or polystyrene resin may be used, such as using a polymer or monomer having a benzene ring or an aromatic ring, or a group having a halogen group or a thio atom. It is possible to use acrylic resin introduced into the skeleton.
- the boundary portion between adjacent filter patterns can be removed to a depth of a surface force of 0.03 / zm to 0.5 / zm.
- the peripheral part (lower part) of the microlens is constituted by a part (upper part) of the color filter 25! Therefore, the distance below the microlens can be reduced, and the solid with good sensitivity An image sensor can be obtained.
- the lower limit of the depth at which the boundary portion between adjacent filter patterns is removed is set to 0.03 m, which is the minimum value that can effectively identify the film thickness with SEM, AFM, etc.
- the upper limit is set to 0.5 m because, if a step exceeding 0.5 m is formed, the film surface becomes rough and the sensitivity is reduced due to surface scattering.
- the effective film thickness of the color filter may be increased to, for example, 1 m or more, and the thickness of the step is deviated from one of the problems of the present invention. .
- FIG. 7 is a partial cross-sectional view of a solid-state imaging device according to still another embodiment of the present invention.
- 8A to 8I are partial cross-sectional views for explaining the manufacturing method of the solid-state imaging device shown in FIG. 7 in the order of steps.
- the plan view of FIG. 7 is the same as FIG.
- the solid-state imaging device shown in FIG. 7 has a flat surface having a step on a semiconductor substrate 50 provided with a photoelectric conversion device 51 having a function of converting light into an electric signal, which is two-dimensionally arranged.
- the layer 52 includes a color filter 53 formed on the flattening layer 52 for color-separating incident light, and a plurality of microlenses 54 disposed on the color filter 52.
- Such a solid-state imaging device can be manufactured by the method shown in FIGS.
- a first planarization layer 62 is formed on a semiconductor substrate 60 (see FIG. 8A) having the photoelectric conversion elements 61 arranged two-dimensionally.
- the first flat layer includes one or more resins such as acrylic, epoxy, polyimide, phenol novolac, polyester, urethane, melamine, urea, styrene. It is possible to use fat.
- a green resist layer 63 is formed on the first flat layer 62.
- the green resist layer 63 is formed by applying a resin dispersion containing a thermosetting resin as a main component and having a green pigment dispersed on the planarizing layer 62 and thermally curing the resin.
- a predetermined grease pattern 64 is formed on the green resist layer 62 by photolithography, for example, as shown in FIG. 8D.
- the resin pattern 64 for example, acrylic resin, epoxy resin, polyimide resin, phenol novolak resin, and other photosensitive resins can be used singly or as a mixture or copolymerized.
- the exposure machine used in the photolithography process for patterning the photosensitive resin the one described in the step shown in FIG. 4C of the above-described embodiment can be used.
- the green resist layer 63 is patterned by dry etching using the resin pattern 64 as a mask to form a green filter pattern 65a as shown in FIG. 8E. At that time, the unnecessary portion of the green resist layer is removed, and the upper portion of the planarizing layer under the unnecessary portion of the green resist layer is removed.
- ECR ECR
- parallel plate magnetron DRM
- ICP ICP
- dual frequency type RIE RIE
- the gas used for dry etching is reactive (oxidative and reducing), that is, if it is an etching gas, it has a halogen element such as fluorine, chlorine or bromine in its configuration.
- a gas similarly a gas having oxygen or ion element in its structure can be used, but is not limited thereto.
- a blue filter pattern 65b and a red filter pattern are formed by photolithography, and a color filter 66 having green, blue and red filter pattern forces is formed as shown in FIG. 8F. Form.
- FIG. 5 is a plan view showing the arrangement of the filter patterns of the color filter 66.
- a G (green) filter is provided every other pixel, and an R (red) filter and a B (blue) filter are installed every other line between the G filters. It is a wheel array.
- the cross-sectional view along AA 'in Fig. 5 is shown in Fig. 7.
- a second planarization layer 67 is formed on the color filter 66 formed as described above.
- the second flat layer is made of acrylic, epoxy, polyimide, phenol novolac, polyester, urethane, melamine, urea, styrene, etc. Uses rosin containing one or more It can be done.
- a lens matrix 68 is formed on the second flat layer 67 by a thermal reflow method that is a well-known technique.
- an alkali-soluble and heat-reflowable resin such as acrylic resin, phenol resin, polystyrene resin, etc., for which photosensitive resin is preferred, can be used.
- the green filter pattern 65a is formed by patterning by dry etching after the green resist layer 63 is completely thermoset, so that the subsequent photo There is no pixel defect in the development process in lithography.
- the green filter pattern 65a has the largest area. By doing so, the adhesion to the base can be further strengthened, and pixel defects can be prevented more effectively.
- the area of the largest filter area can be, for example, 1 to 2 times the area of the smallest filter pattern. Also, by forming the filter pattern with the largest area by patterning by dry etching, the filter pattern that occupies the widest area can be accurately patterned, and the accuracy of the entire color filter It becomes an improvement. Specifically, the green filter pattern often has the largest area.
- the color filter layer having a high pigment concentration that is, a low content of the resin involved in curing, is patterned by a forming method in which patterning is performed by dry etching. Even a single color filter that becomes insufficient can form a residue with high accuracy without peeling. Specifically, this effect is obtained in the case of a red filter pattern or a green filter pattern.
- it is a forming method in which a single layer of color filter is patterned by dry etching, because the transmittance of the exposure wavelength used for patterning by photolithography is low, exposure becomes insufficient, and resolution is reduced and peeling occurs. By forming a pattern, it is possible to form a single layer of color filter that is not sufficiently cured by a normal photolithographic process, with a high degree of accuracy and no peeling. This effect is particularly effective in the case of a single blue filter pattern.
- the filter pattern force that was first formed is precisely patterned and firmly adhered to the substrate. Even so, it is possible to accurately form a filter pattern without peeling.
- the color filter layer that also forms the uneven force and back force of the first formed filter pattern cracks, resulting in three colors.
- the first color or in the case of a color filter consisting of four colors, the first color or the first and second colors are patterned by dry etching, and the remaining colors are patterned by photolithography. It is preferable to do.
- the resin contained in the green filter pattern may have a higher refractive index than the resin contained in the blue and red filter patterns.
- the refractive index of the green filter pattern is lower than the refractive index of other filter patterns, there has been a problem that the reflectance of the color filter is not uniform.
- the range of selection of the resin is narrow and the high refractive index resin. It was difficult to select.
- the green filter pattern is formed by dry etching without depending on photolithography, so that the resin of the green filter pattern is selected from among thermosetting resins. A wide range of materials with a high refractive index can be selected. [0131] In this way, the resin contained in the green filter pattern has a higher refractive index than the resin contained in the blue and red filter patterns, so that the refraction of one pattern of three colors of filters can be achieved. Since the rate can be approximated and the condensing effect by the microlens can be made equivalent, a good solid-state imaging device can be obtained.
- a smooth surface filter can be obtained by patterning a layer to which a resin having a high refractive index is added using dry etching. A pattern can be obtained.
- the refractive index of the resin contained in the blue and red filter patterns is 0.05-0.
- a resin having a refractive index as high as about 2 is preferably used.
- the resin contained in the blue and red filter patterns is acrylic, epoxy, polyimide, phenol novolac, polyester, urethane, having a refractive index of 1.5 to 1.6.
- phenol resin or polystyrene resin may be used, such as using a polymer or monomer having a benzene ring or an aromatic ring, or a group having a halogen group or a thio atom. It is possible to use acrylic resin introduced into the skeleton.
- the boundary portion of the adjacent filter pattern is removed from the surface to a depth of 0.03 m to 0.5 / zm, and the periphery of the microlens is Since the portion is constituted by a part of the color filter 26, the distance below the microlens can be reduced, and a solid-state imaging device with good sensitivity can be obtained.
- the lower limit of the depth to be removed at the boundary between adjacent filter patterns is set to 0.03 m, which is the minimum value that can be used to effectively identify the film thickness using SEM, AFM, etc.
- the upper limit is set to 0.5 ⁇ m because when the thickness exceeds 0.5 m, the film surface becomes rough and the sensitivity is reduced due to surface scattering. Furthermore, beyond 0.5 m, This is because the film thickness force of an effective color filter may be increased to, for example, 1 ⁇ m or more, and the film thickness is not one of the problems of the present invention.
- a pigment-dispersed green resist is spin-coated at a rotation speed of lOOO rpm on a semiconductor substrate 20 having photoelectric conversion elements 21 arranged two-dimensionally as shown in FIG. Betaing was performed for a minute, and a green resist layer 22 was formed as shown in FIG. 4B.
- C. I. PG36 is used as the color index for the Darin pigment
- the pigment concentration is 35% by weight
- the film thickness is 0.
- a thermosetting acrylic resin was used as the resin that is the main component of the green resist.
- a coating solution containing acrylic photosensitive resin as a main component was spin coated on the green resist layer 22 at a rotation speed of 3 OOOrpm, and then patterned by photolithography, as shown in Fig. 4C.
- a rosin pattern 23 was formed.
- the green resist layer 22 was etched using a chlorofluorocarbon gas in a dry etching apparatus to form a green filter pattern 24a as shown in FIG. 4D.
- the thickness of the green filter pattern 24a was 0.8 ⁇ m.
- a blue filter pattern 24b was formed using a pigment-dispersed blue resist by a patterning method using dry etching in the same manner as the green filter pattern 24a.
- the pigment used in the blue resist a CI PB156, CI PV23 at the respective power color index pigment concentration is 40 weight 0/0, the film thickness is 0. 8 m.
- the resin that is the main component of the blue resist a thermosetting type attalinole resin was used.
- a red filter pattern (not shown) was formed by photolithography using a pigment-dispersed red resist to obtain a color filter 25.
- the pigments used in the red resist were CI PR117, CI PR48: 1, and CI PY139, respectively, according to the color index, the pigment concentration was 45% by weight, and the film thickness was O. 8 m.
- a coating solution containing acrylic resin is spin-coated on the color filter 25 thus formed at a rotation speed of lOOOrpm, and heat-treated at 200 ° C for 10 minutes on a hot plate. The fat was cured to form a planarization layer 26 as shown in FIG. 4F.
- a microlens 27 was formed on the planarizing layer 26 by a thermal reflow method, which is a well-known technique, to complete a solid-state imaging device.
- the color filter 25 is directly formed on the surface of the semiconductor substrate 20, and since the thermosetting resin is used, the color material in the solid content is removed. Since the density can be increased, the color filter 25 can be formed thin, and therefore, the distance under the lens is small and the sensitivity is good. In addition, the color filter was not able to cause color unevenness due to the shape of the pattern edge.
- thermosetting acrylic resin as the main component of the green resist and blue resist formed by the shape transfer technology by dry etching, especially epoxy resin that does not stick to acrylic resin.
- Resin polyimide resin, phenol novolac resin, polyester resin, urethane resin, melamine resin, urea resin, styrene resin, and one or more of these resins It is also possible to use fat.
- the green filter pattern and the blue filter pattern are formed using a dry etching patterning technique, and the red filter pattern is formed by photolithography. Only the green filter pattern is dry etched. It is possible to form a blue filter pattern and a red filter pattern by photolithography, or alternatively, to form a green filter pattern and a red filter pattern using a patterning technique by dry etching.
- a blue filter pattern may be formed by photolithography. The filter pattern formed at the beginning is formed by dry etching and finally formed. It is only necessary that the filter pattern to be formed is formed by photolithography. However, since the green filter pattern and the blue filter pattern are more likely to be peeled off than the red filter pattern in the photolithography process, the green filter pattern and the blue filter pattern are more preferably formed by a patterning technique using a dry etching technique.
- the microlens is formed by using the dry etching patterning technology that can form a thinner thickness under the power microphone mouth lens formed by the thermal reflow method. Is more preferable. This is accomplished by forming a transparent resin layer that will eventually become a microlens on the color filter, and then forming a microlens matrix (lens matrix) by thermal reflow, and then using the lens matrix as a mask. Transfer the lens matrix shape to the transparent resin layer by the etching method!
- the etching rate by adjusting the etching rate by selecting the height of the lens mold used to transfer the lens shape and the material, etc., within the range of 0.03 / ⁇ ⁇ to 0.5 / zm, It is preferable to remove the boundary portion from the surface and to form the peripheral portion of the microlens with a part of the color filter because the distance below the lens can be further reduced.
- thermosetting acrylic resin was used as a green resist resin, but radiation curing (photocuring) similar to that used for red resists and blue resists. It is also possible to use an acrylic resin. In this case, it is preferable to reduce the amount of monomers and photopolymerization initiators required for thinning, and it is preferable to use a resin material similar to that of thermosetting tabs. In this case, the resin material is not suitable for the exposure / development process.
- a coating solution containing acrylic resin as a main component is spin-coated at a rotational speed of 2000 rpm on a semiconductor substrate 60 including photoelectric conversion elements 61 arranged two-dimensionally.
- beta was performed at 230 ° C. for 6 minutes using a hot plate, and a first planarization layer 62 was formed as shown in FIG. 8B.
- the thickness of the first flat layer 62 was 0.45 m.
- the pigment-dispersed green resist is rotated on the first flat layer 62 by lOOOrpm. After spin coating with a number, beta was applied at 230 ° C. for 6 minutes to form a green resist layer 83 as shown in FIG. 8C. At this time, CI PG3 6 is used for the green pigment in the color index, the pigment concentration is 35% by weight, and the film thickness is 0.5 m. In addition, as the main resin of the green resist, a thermosetting acrylic high refractive index resin was used. Therefore, the refractive index of the green resist layer 63 is 1.65.
- thermosetting acrylic high refractive index resin a thermosetting agent is required, but a photopolymerization initiator and other sensitizers can be eliminated, and an alcohol strength can be reduced. Because photolithographic properties such as development properties and photo-curing properties are not necessary, it is possible to increase the pigment concentration, and even if the green filter is made into a thin film, it is possible to obtain a green filter that has the desired spectral characteristics. done.
- a coating solution mainly composed of an acrylic photosensitive resin is spin-coated on the green resist layer 63 at a rotation speed of 300 Orpm, and then patterned by photolithography, as shown in Fig. 8D.
- a transparent resin pattern 64 was formed.
- the transparent resin used as a mask does not contain a substance that hinders resolution such as a pigment, it can be selected, so that it can be patterned with high precision.
- the green resist layer 23 is etched using a chlorofluorocarbon gas in a dry etching apparatus to form a green filter pattern 65a as shown in FIG. 8E. did.
- the film thickness of the green filter pattern 65a is 0.5 m, and the first flat layer 62 is partially removed. A 4 m step was formed.
- a blue filter pattern 65b and a red filter pattern were sequentially formed by photolithography to obtain a color filter 66.
- the pigments used in the blue resist are CI P B15: 6 and CI PV23, respectively, according to the color index, the pigment concentration is 30% by weight, the film thickness is 0.9 / ⁇ ⁇ , and the refractive index is 1.64.
- a UV absorber is added to the color filter 66 thus formed.
- a lens matrix 68 made of acrylic resin having photosensitivity and thermal reflow properties was formed on the planarizing layer 67 by a thermal reflow method that is a well-known technique.
- the etching process is performed using the lens matrix 68 as a mask using a fluorocarbon gas, and the shape of the lens matrix 68 is changed to the second flat layer 67.
- the microlens 69 was formed by transfer. At this time, a depth of 0.0 was removed from the boundary surface of each pattern of the color filter 66, and a solid-state imaging device was completed as shown in FIG.
- the green filter pattern 65a is formed by using a pattern forming method by dry etching, so that a color filter having a fine pattern and a thin film thickness is formed in a good shape.
- a pattern forming method by dry etching so that a color filter having a fine pattern and a thin film thickness is formed in a good shape.
- the thermosetting resin is used for one layer of the green filter, the concentration of the coloring material in the solid content can be increased, so that the color filter can be formed thin, and a thin solid-state imaging device can be obtained. done.
- epoxy resin that does not stick to acrylic resin especially power using thermosetting acrylic resin as the main component of green resist and blue resist formed by shape transfer technology by dry etching.
- Resin polyimide resin, phenol novolac resin, polyester resin, urethane resin, melamine resin, urea resin, styrene resin, and one or more of these resins It is also possible to use fat.
- the green filter pattern having the lowest refractive index and the large surface reflection is higher than the conventional blue filter pattern and red filter pattern.
- a refractive index can be achieved, and a solid-state imaging device with good sensitivity can be obtained.
- the green filter pattern is formed by patterning using dry etching. Peeling may occur due to the photolithography process. Blue filter pattern, high pigment concentration !, Red filter pattern. May be formed using dry etching. However, since the adhesion and pattern accuracy of the first color green filter pattern are the most important, it is necessary to form the green filter pattern by the shape transfer technology using dry etching technology.
- the red filter pattern may be formed as the second color after the green filter pattern is formed. However, since the red filter pattern has a high pigment concentration, residue tends to remain, so the blue filter pattern is used as the second color. It is desirable to form.
- a force that provides a step of 0.4 m in the first flat layer 62 disposed under the color filter 66 is a transparent base plate for forming a green filter pattern.
- the first flat layer may be etched within a range of 0.03 / ⁇ ⁇ to 0.5 / zm by adjusting the etching rate by selecting the thickness and material of the bright resin pattern 64.
- the lower limit is set to 0.03 m because it is the minimum value that can be effectively identified by SEM or AFM
- the upper limit is set to 0.5 / zm. This is because if the level difference exceeds 0.5 m, the film surface will fall and the sensitivity will decrease due to surface scattering.
- the microlens may be formed by a conventional thermal reflow method in which the microlens is formed by dry etching.
- the microlens is formed by dry etching.
- a coating solution containing acrylic resin as a main component is spin-coated at a rotational speed of 2000 rpm on a semiconductor substrate 60 including photoelectric conversion elements 61 arranged two-dimensionally.
- beta was performed at 230 ° C. for 6 minutes using a hot plate, and a first planarization layer 62 was formed as shown in FIG. 8B.
- the thickness of the first flat layer 62 was 0.4 m.
- a pigment-dispersed green resist was spin-coated on the first flat layer 62 at a rotation speed of lOOOrpm, and beta-treated at 230 ° C for 6 minutes.
- a strike layer 63 was formed.
- CI PG76 is used for the green pigment in the color index
- the pigment concentration is 40% by weight
- the film thickness is 0.5 m.
- a thermosetting acrylic high refractive index resin was used as the main resin of the green resist. Therefore, the refractive index of the green resist layer 63 is 1.65.
- thermosetting acrylic high refractive index resin although a thermosetting agent is required, it is possible to eliminate a photopolymerization initiator and other sensitizers, and to reduce the strength. Since photolithographic properties such as development properties and photocuring properties are not required, a green filter thin film can be achieved by increasing the pigment concentration.
- a coating solution mainly composed of an acrylic photosensitive resin is spin-coated on the green resist layer 63 at a rotation speed of 300 Orpm, and then patterned by photolithography, as shown in Fig. 8D.
- a transparent resin pattern 64 was formed.
- the transparent resin used as a mask does not contain a substance that hinders resolution such as a pigment, it can be selected, so that it can be patterned with high precision.
- the green resist layer 63 is etched using a chlorofluorocarbon gas in a dry etching apparatus to form a green filter pattern 65a as shown in FIG. 9A. did. At this time, the thickness of the green filter pattern 65a was 0.5 m, and the first flat layer 62 not covered with the green filter pattern 65a was completely removed.
- a blue filter pattern 65b and a red filter pattern were sequentially formed by photolithography to obtain a color filter 66.
- the pigments used in the blue resist are CI P B15: 6 and CI PV63, respectively, according to the color index, the pigment concentration is 30% by weight, the film thickness is 0.9 / ⁇ ⁇ , and the refractive index is 1.64.
- a UV absorber is added to the color filter 66 thus formed.
- a lens matrix 68 made of acrylic resin having photosensitivity and thermal reflow properties was formed on the planarizing layer 67 by a thermal reflow method that is a well-known technique.
- the etching is performed using the lens matrix 68 as a mask using a fluorocarbon gas, and the shape of the lens matrix 68 is changed to the second flat layer 67.
- the microlens 69 was formed by transfer.
- a solid-state imaging device having a 0.1 m depth from the boundary surface of each pattern of the color filter 66 and having the upper part of the color filter as a part of the microlens as shown in FIG. 9E. completed.
- the green filter pattern 65a is formed using a pattern forming method by dry etching, so that a color filter with a fine pattern and a thin film thickness is formed in a good shape.
- a pattern forming method by dry etching so that a color filter with a fine pattern and a thin film thickness is formed in a good shape.
- thermosetting resin is used for the green filter layer, it is possible to increase the concentration of the color material in the solid content, so that the color filter can be formed thin, and a thin solid-state imaging device can be obtained. It was.
- the force of removing the first flat layer 62 disposed under the filter pattern formed by the pattern forming method using photolithography is completely removed.
- the first flat layer may be left by adjusting the etching rate by selecting the thickness of the transparent resin pattern 64 serving as a matrix. However, it is preferable to remove completely in order not to leave a residue of the second and subsequent color filter layers.
- the microlens may be formed by a conventional thermal reflow method in which the microlens is formed by dry etching.
- the microlens is formed by dry etching.
- the boundary between adjacent color filters was etched with a surface force of 0.1 ⁇ m deep, and the periphery of the microlens was made up of part of the color filter.
- the material from the height and material selection of the mold, the layer structure of the layer to which the lens shape is transferred, the thickness, the etching rate, etc., it is removed from the surface in the range of 0.03 111 to 0. Depth can be set.
- the lower limit is set to 0.03 i um because it is the minimum value that can identify the film thickness by SEM or AFM, and the upper limit is set to 0.0.
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- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
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Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP06713204.3A EP1855320B1 (en) | 2005-02-10 | 2006-02-07 | Solid-state imaging device and method for manufacturing same |
KR1020077017581A KR100934513B1 (ko) | 2005-02-10 | 2006-02-07 | 고체 촬상 소자 및 그 제조 방법 |
US11/889,070 US8097485B2 (en) | 2005-02-10 | 2007-08-08 | Solid state image pickup device and manufacturing method thereof |
US12/662,368 US7932122B2 (en) | 2005-02-10 | 2010-04-13 | Manufacturing method for solid state image pickup device |
Applications Claiming Priority (4)
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JP2005034620A JP4857569B2 (ja) | 2005-02-10 | 2005-02-10 | 固体撮像素子及びその製造方法 |
JP2005-034620 | 2005-02-10 | ||
JP2005-034621 | 2005-02-10 | ||
JP2005034621A JP4984400B2 (ja) | 2005-02-10 | 2005-02-10 | 固体撮像素子及びその製造方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
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US11/889,070 Continuation US8097485B2 (en) | 2005-02-10 | 2007-08-08 | Solid state image pickup device and manufacturing method thereof |
Publications (1)
Publication Number | Publication Date |
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WO2006085528A1 true WO2006085528A1 (ja) | 2006-08-17 |
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ID=36793100
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PCT/JP2006/302061 WO2006085528A1 (ja) | 2005-02-10 | 2006-02-07 | 固体撮像素子及びその製造方法 |
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Country | Link |
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US (2) | US8097485B2 (ja) |
EP (1) | EP1855320B1 (ja) |
KR (1) | KR100934513B1 (ja) |
TW (1) | TWI316636B (ja) |
WO (1) | WO2006085528A1 (ja) |
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JP2010147143A (ja) * | 2008-12-17 | 2010-07-01 | Nikon Corp | 固体撮像素子及びその製造方法、並びに撮像装置 |
JP2018107324A (ja) * | 2016-12-27 | 2018-07-05 | 凸版印刷株式会社 | 固体撮像素子およびその製造方法 |
CN109996047A (zh) * | 2018-01-03 | 2019-07-09 | 奇景光电股份有限公司 | 影像感测器、微透镜阵列以及用于制造在该影像感测器中具有不同高度的微透镜阵列的方法 |
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US20130100324A1 (en) * | 2011-10-21 | 2013-04-25 | Sony Corporation | Method of manufacturing solid-state image pickup element, solid-state image pickup element, image pickup device, electronic apparatus, solid-state image pickup device, and method of manufacturing solid-state image pickup device |
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WO2017086321A1 (ja) | 2015-11-16 | 2017-05-26 | 凸版印刷株式会社 | 固体撮像素子の製造方法及び固体撮像素子、並びにカラーフィルタの製造方法及びカラーフィルタ |
JP2017139742A (ja) * | 2016-02-02 | 2017-08-10 | パナソニックIpマネジメント株式会社 | 撮像装置、撮像システム、撮像方法及びプログラム |
WO2018123884A1 (ja) * | 2016-12-27 | 2018-07-05 | 凸版印刷株式会社 | 固体撮像素子及びその製造方法 |
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JP2019087545A (ja) * | 2017-11-01 | 2019-06-06 | 凸版印刷株式会社 | 固体撮像素子及びその製造方法 |
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JP2010147143A (ja) * | 2008-12-17 | 2010-07-01 | Nikon Corp | 固体撮像素子及びその製造方法、並びに撮像装置 |
JP2018107324A (ja) * | 2016-12-27 | 2018-07-05 | 凸版印刷株式会社 | 固体撮像素子およびその製造方法 |
CN109996047A (zh) * | 2018-01-03 | 2019-07-09 | 奇景光电股份有限公司 | 影像感测器、微透镜阵列以及用于制造在该影像感测器中具有不同高度的微透镜阵列的方法 |
Also Published As
Publication number | Publication date |
---|---|
US20100261303A1 (en) | 2010-10-14 |
TWI316636B (en) | 2009-11-01 |
TW200643587A (en) | 2006-12-16 |
US7932122B2 (en) | 2011-04-26 |
KR100934513B1 (ko) | 2009-12-29 |
EP1855320A4 (en) | 2012-03-21 |
US8097485B2 (en) | 2012-01-17 |
KR20070098894A (ko) | 2007-10-05 |
EP1855320B1 (en) | 2013-12-11 |
EP1855320A1 (en) | 2007-11-14 |
US20070298164A1 (en) | 2007-12-27 |
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