WO2006058647A1 - Speicherschaltung wie verfahren zum bewerten eines speicherdatums einer cbram-widerstandsspeicherzelle - Google Patents
Speicherschaltung wie verfahren zum bewerten eines speicherdatums einer cbram-widerstandsspeicherzelle Download PDFInfo
- Publication number
- WO2006058647A1 WO2006058647A1 PCT/EP2005/012542 EP2005012542W WO2006058647A1 WO 2006058647 A1 WO2006058647 A1 WO 2006058647A1 EP 2005012542 W EP2005012542 W EP 2005012542W WO 2006058647 A1 WO2006058647 A1 WO 2006058647A1
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- WIPO (PCT)
- Prior art keywords
- bit line
- cycle
- potential
- current
- memory
- Prior art date
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
- G11C13/0011—RRAM elements whose operation depends upon chemical change comprising conductive bridging RAM [CBRAM] or programming metallization cells [PMCs]
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/004—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/004—Reading or sensing circuits or methods
- G11C2013/0054—Read is performed on a reference element, e.g. cell, and the reference sensed value is used to compare the sensed value of the selected cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/77—Array wherein the memory element being directly connected to the bit lines and word lines without any access device being used
Definitions
- Memory circuit as method for evaluating a storage data of a CBRAM resistance memory cell
- the invention relates to a memory circuit (Conductive Bridging RAM) comprising CBRAM resistor elements as memory cells.
- the invention further relates to a method for evaluating a storage datum of a CBRAM resistance memory cell.
- Novel memory circuits store information in a resistor network, wherein resistor elements are arranged in a matrix of word lines and bit lines.
- the resistance elements have a variable resistance, with which information can be stored as a storage date.
- CBRAM resistance elements also called PMC resistance elements
- the electrical resistance in a solid state electrolyte can be adjusted by applying a programming current.
- the programming current can be in the CBRAM resistance element set a relatively high or a relatively low resistance, each defining a particular detectable state.
- the CBRAM resistance elements are arranged at the interfaces between word lines and bit lines of the matrix of the memory elements, so that each CBRAM resistance element of a memory cell at such an interface with a connection to dex "corresponding word ⁇ line and with a further connection the corresponding bit line is connected.
- a resistance value of the memory cherzelle representing electrical magnitude determined by applying a voltage or a current to the addressed memory cell using a readout circuit and this compared with a further electrical variable, which is determined depending on a reference component, and determined depending on the result of the comparison, the memory data to be read.
- a memory circuit which comprises memory cells with CBRAM resistance elements.
- the CBRAM resistor elements are arranged in a memory cell matrix on a bit line and on word lines, wherein the resistance values of the
- CBRAM resistance elements are adjustable by applying an electrical quantity to store a storage date.
- the memory circuit further comprises a reference resistance element connected to the bit line and to a reference word line, the resistance value of the reference resistance element corresponding to a resistance threshold value.
- Voltage sources are provided, which are each connected to the word lines and the reference word line, and are switchable in order to apply to the word line or the reference word line an activation potential or a deactivation potential for activating or deactivating the word line or reference word line ,
- a sense amplifier is provided on the bit line and is suitable for measuring a bit line current from the respective bit line while the bit line potential is kept constant.
- a control unit which applies the activation potential to the bit line for reading one of the memory cells and controls the voltage sources in such a way that the activation potential is applied to the reference word line in a first cycle and the deactivation potential is applied to the word lines second cycle to the reference word line the deactivation potential is applied to the word line at which the memory cell to be read is located, the activation potential is applied and to the other word lines the deactivation potential is applied.
- the sense amplifier is connected to a judging unit in which a magnitude determined by the bit line current detected in the first cycle and the bit line current detected in the second cycle is determined to assign the detected electric quantity to a memory data.
- the memory circuit according to the invention has the advantage that no separate sense amplifier must be provided for the reference resistance elements to be provided, which supplies an electrical comparison variable to the evaluation unit. Instead, the reference resistance elements are connected to the bit line at which the CBRAM
- Resistor elements are connected, so that the reference resistor element with the same sense amplifier off can be read, such as the CBRAM resistor element to be read. As a result, an additional sense amplifier can be saved.
- the evaluation of the contents of a memory cell formed by a CBRAM resistor element is performed in two cycles, wherein in a first cycle the activation potential is applied first to the reference word line and the deactivation potential to all word lines. This causes a current to flow through the reference resistor element and the bit line to the sense amplifier, which is measured by means of the sense amplifier and provided to the subsequent evaluation unit in the form of an electrical variable.
- a second cycle which is assumed after the first state, the deactivation potential is applied to the reference word line as well as to the unselected word lines, and the activation potential is applied to the word line at which the memory cell to be read is located.
- the bit line current is measured by the read amplifier and a corresponding variable dependent thereon is made available in the evaluation unit.
- the corresponding memory date is assigned.
- the evaluation unit has a memory element which stores a value representing the bit line current measured during the first cycle, wherein the evaluation unit has a difference unit to calculate the electrical quantity as a function of the difference of the bit line current received during the first cycle during the second cycle received bit line current.
- the memory element has a capacitor to store an electrical quantity dependent on the bitline current detected during the first cycle.
- the sense amplifier has an operational amplifier with an input which is connected to the bit line, wherein a negative feedback circuit is provided in order to keep the bit line potential on the bit line constant during the detection of the bit line current.
- the voltage sources and the sense amplifier are preferably matched to one another such that the deactivation potential of the voltage sources corresponds to the bit line potential on which the corresponding bit line is held by the corresponding sense amplifier. In this way it is ensured that the deactivated word lines or a deactivated reference word line are in the ideal case without current, since no voltage drops between the deactivation potential and the bit line potential.
- the reference resistive elements may comprise a plurality of interconnected CBRAM resistive elements each set to a resistance value corresponding to a first state of the storage datum, or to another resistance value corresponding to a second state of the storage datum.
- the reference resistance elements can also be detected by means of CBRAM Resistance elements are formed, which are programmed to a fixed value.
- the control unit may assume the first cycle in which the corresponding potentials are applied during a first time duration and assume the second state during a second time duration. In this way, during the first time period, a capacitance can be charged or discharged in dependence on the bit line current in order to achieve a defined charge potential in the first cycle in dependence on the bit line current and thus store a quantity dependent on the bit line current in the first cycle. This quantity is used as a reference for the evaluation of the bit line current flowing in the second cycle.
- a method of evaluating a storage data of a CBRAM resistive memory cell is provided.
- the CBRAM resistive memory cell is disposed in a group of CBRAM resistive memory cells on a bit line and on word lines, wherein the resistance values of the CBRAM resistive memory cells are adjustable by applying an electrical quantity to store a respective memory data.
- a reference resistance element is connected to the bit line and to a reference word line, the resistance value of the reference resistance element corresponding to a resistance threshold value.
- the method comprises the steps of: applying a deactivation potential to the word lines and applying an activation potential to the reference word line; Detecting a resulting bit line current in a first cycle; Applying a deactivation potential to the reference word line and applying the activation potential to the word line at which the memory cell to be read is located; Detecting a bit line current resulting in the second mode; and generating an electrical quantity corresponding to the bitline current detected in the first cycle and that in the second Cycle detected bit line current and assigning a storage date.
- the method according to the invention has the advantage that the CBRAM resistance memory cell and the reference resistance element can be connected to a single bit line, whereby a resistance value of the CBRAM resistance memory cell and a resistance value of the reference resistance element are successively read out by detecting a corresponding bit line current and the storage date is determined as a function of the bit line currents resulting during the readout of the reference resistance element and during the readout of the CBRAM resistance memory cell.
- a quantity representing the bit line current resulting in the first cycle is stored in order to determine the storage data in dependence on the bit line current detected in the first cycle during or after the second cycle.
- the step of applying the deactivation potential to the word lines and applying an activation potential to the reference word line in the first cycle may be performed during a first period of time to store a bit line current dependent charge in a capacitor. Furthermore, it can be provided that the step of applying a deactivation potential to the reference word line and applying the activation potential to the word line, at which the memory cell to be read out, be carried out during a second period of time.
- a charge storage having a size dependent on the bit line current is charged and discharged, and during the second cycle the charge storage is discharged with a size dependent on the bit line current.
- FIG. 1 shows schematically a section of a memory cell matrix with reference resistance elements and memory cells with CBRAM resistance elements according to an embodiment of the invention
- Figure 2 shows a more detailed illustration of the sense amplifier and the evaluation unit for reading the reference resistance value in a first cycle
- Figure 3 shows a more detailed illustration of the sense amplifier and the evaluation unit of Figure 2 in a second cycle in receiving the bitline current in response to the resistance of the CBRAM resistive element;
- FIG. 4 shows an illustration of a sense amplifier and a weighting unit according to a further embodiment
- FIGS 5a to 5c show possible configurations of the reference resistance element constructed by means of CBRAM resistor elements.
- FIG. 1 schematically shows a memory circuit according to the invention which has a memory cell matrix 1 which comprises word lines WL and bit lines BL which intersect one another and "a respective memory cell is arranged at their intersection points.”
- the memory cells comprise CBRAM resistance elements 2, each with A first terminal is connected to the respective word line WL and a second terminal is connected to the respective bit line BL, and selection switches and the like are not provided in this embodiment.
- the word lines WL are driven by voltage sources 3 which are connected to an address decoder 4, which activates the voltage sources 3, so that they apply to the respective word line WL an activation potential V akt or a deactivation potential Vdeact.
- the bit lines BL are each connected to a sense amplifier 5, which detects a bit line current, while the respective sense amplifier 5 holds the bit line BL at a predefined bit line potential V BL .
- the sense amplifiers 5 are essentially always active and apply the bit line potential V BL to the bit lines BL , a deactivation potential V dea k t a n being applied to deactivate the CBRAM resistance memory cells 2 by the corresponding voltage sources 3 corresponds to the bit line potential VBL.
- a word line WL is selected by driving the respective voltage source 3 through the address decoder 4 so as to apply an activation potential to the word line WL, so that a voltage drop between the activated word line WL and the bit lines BL is maintained at the bit line potential across which CBRAM resistance element 2 is caused, whereby a current flows from word line WL to bit line BL, which can be detected by sense amplifier 5.
- Each bit line BL is further connected to a reference resistance element 6 arranged along a reference word line.
- the reference word line RWL essentially crosses the bit lines BL, and the reference resistance element 6 is connected at the crossing points to a first terminal on the reference word line and to a second terminal on the respective bit line BL.
- the reference word line is supplied with a voltage via a reference voltage source 7 in order to activate and deactivate the reference word line RWL, preferably with the same activation sign or deactivation potential. tial Vdeakt how the word lines WL are supplied by the voltage sources 3.
- the CBRAM resistance elements 2 can be programmed by a write current by means of a write circuit (not shown) and thereby obtain a relatively high or a relatively low resistance value depending on the storage data to be stored.
- the reference resistance elements 6 are set at a resistance value or set to a resistance value that is between the relatively high and the relatively low resistance values that the CBRAM resistance elements 2 can assume.
- the sense amplifiers 5 are each coupled to an evaluation circuit 8, in which an evaluation of the read-out bit line current of the corresponding bit line BL is performed.
- the evaluation of the bit line current is performed by means of a measuring operation which is controlled by means of a control unit 9.
- the control unit 9 is connected to the weighting units 8 with the address decoder 4 and with the
- Reference voltage source 7 in conjunction to control the reading of a storage date.
- a save date is read in two cycles.
- the control unit 9 controls the reference voltage source 7 such that the reference voltage source 7 applies the activation potential V act to the reference word line RWL and thus causes a voltage drop between the reference resistance elements 6 and the respective bit line BL.
- the bit line current received by the associated sense amplifier 5 is converted into a suitable electrical variable, and this is buffered so that it is available after a second cycle following the first cycle.
- the electrical quantity can be stored as a potential in a capacitor.
- the control unit 9 activates the reference voltage source 7 in such a way that a deactivation potential V dea k t is applied to the reference word line RWL and controls the address decoder 4 essentially simultaneously or with a small time interval, so that accordingly one of the voltage sources 3 is activated to the memory cell to be addressed so that it applies the activation potential V act to the addressed word line WL.
- the remaining voltage sources 3 on the remaining word lines WL provide a deactivation potential V deact which essentially corresponds to the bit line potential BL, so that essentially no appreciable current flows via the non-addressed CBRAM resistance elements 2.
- the control unit 9 now controls the selected evaluation unit 8 in such a way that an output signal is output on the respective output line A as a function of the bit line current detected during the first cycle and depending on the bit line current detected in the second cycle and corresponds to the memory datum to be read.
- FIG. 2 shows a more detailed circuit diagram of a sense amplifier 5 and a rating unit 8 on a bit line BL, wherein the reference resistance element 6 on the corresponding bit line BL and the selected and unselected CBRAM resistance elements 2 are represented as resistance symbols in a corresponding connection ,
- the resistance value of the selected CBRAM resistance element 2 is indicated by Rc the resistance value of the non-selected CBRAM resistance elements 2 connected in parallel to the selected bit line with Rp and the resistance value of the reference resistance element 6 with R ref .
- the first terminal of the reference resistance element 6 is connected to the activation potential V akt and connected to the second terminal to the bit line BL.
- Both the addressed CBRAM resistance element 2 Rc and the remaining CBRAM resistance elements 2 connected to the bit line BL Rp are connected with their second terminals to the bit line and their first terminals to a deactivation potential Vdeakt.
- the sense amplifier 5 essentially has an operational amplifier 10, to whose output a negative feedback circuit 11 is connected, which is coupled to an inverting input of the operational amplifier 10.
- the bit line potential VBL is applied, which substantially corresponds to the deactivation potential V dea i ct .
- the voltage which is established on the bit line BL does not correspond exactly to the bit line potential V BL but is assigned an offset which is not known and which usually results in a connection between the voltage sources 3, which apply the deactivation potential V dea k t to the word lines WL and the bit line BL flows a quiescent current, which depends on the offset potential Vos.
- the negative feedback circuit 11 has, for example, an n-channel field-effect transistor 12 whose control terminal is coupled to the output of the operational amplifier 10.
- a source terminal of the n-channel field effect transistor 12 is connected to a first terminal of a current source 13 whose second terminal is connected to a ground potential GND.
- a drain terminal of the field effect transistor 12 is connected via a current mirror circuit 14 to a high supply voltage potential V DD .
- the source terminal of the field effect transistor 12 and the first terminal of the current source 13 are connected to the bit line BL.
- the current Il flowing through the reference resistance element 6 to the bit line due to the activation potential Vakt is thus impressed into the field effect transistor 12 and mirrored via the current mirror circuit 14 into a further current path.
- the current source 13 may alternatively be omitted if the Activation potential V a kt is smaller than the bit line potential V B L, SO that always a positive current between the drain terminal and the source terminal of the n-channel field effect transistor 12 flows.
- a switch 15 which is controlled by the control unit 9 and is designed, for example, as a transistor.
- the switch 15 is closed in the first cycle.
- a capacitor 16 is connected in the current path, which is charged or discharged by the current reflected in the further current path, whereby the voltage at the capacitor 16 rises or falls.
- the first terminal of the capacitor 16 is further connected to a control terminal of another field-effect transistor 17, which becomes conductive with increasing capacitor voltage in a certain dimensions determined by the capacitor voltage. It turns in the further field effect transistor 17, a current value which flows through the further current path.
- the switch 15 When the control unit 9 switches to the second cycle, the switch 15 is opened, so that the now existing setting, i. the current flowing through the further field effect transistor 17 is maintained.
- the further field effect transistor 17 operates in the illustrated circuit as a current source set by the charge potential of the capacitor 16.
- the storage of the appropriate size is done by charge storage on the capacitance 16, which is preferably formed as a gate capacitance of the other field effect transistor (memory transistor 17).
- the gate voltage is maintained even after opening the switch 15 and causes I spei che r also flows in the second cycle.
- the output of the current mirror 14, which provides the current on the further current path, is connected to a first input of a comparator 18.
- the first input of the comparator 18 is connected via a balancing transistor 19 to a second input of the comparator 18.
- the equalizing transistor 19 has a control input, which is driven by a compensation signal EQ.
- the first and second inputs of the comparator 18 have capacitances designated as evaluator capacitances Cl and C2.
- the signal EQ is high and causes the equalizing transistor 19 to connect the evaluator capacitances Cl and C2 to the drain of the memory transistor 17.
- EQ is set to low, thus disconnecting the evaluator capacitors Cl and C2 .
- the previously applied potential is stored as the charge potential on the first evaluator capacitance C1, which serves as a reference potential for evaluating the signal present at the first input of the comparator 18.
- Resistor element 2 connected to the activation potential V a kt.
- the bit line current I 2 now flows from the activation potential V a k t via the addressed CBRAM resistance element 2 to the bit line BL and thus effects a further bit line current 2 as a function of the bit line potential V BL and the offset potential of the operational amplifier 10 caused by the component parameters.
- the switch 15 is open (as controlled by the control unit 9) so that the charge potential stored in the capacitor 16 is substantially constant, so that to a certain constant current value I sp verifiable e r through the further field effect transistor 17 results. If now the bit line current 12 read out in the further current path in the second cycle is mirrored, a resulting voltage is produced at the drain terminal of the further field effect transistor 17 which is interpreted by a subsequent comparator 18 and provides a corresponding output signal A.
- the circuit formed by the capacitor 16, the switch 15 and the further field effect transistor 17 is essentially a subtractor with which a first current value, which is stored by the closed switch 15, is subtracted from a current value applied when the switch 15 is open and a corresponding voltage value corresponding to the subtraction result 15 is output at the drain terminal of the further field effect transistor 17.
- the two-stage readout process of a memory cell with a CBRAM resistor element has the further advantage that the bit line current Ii read in the first cycle and the bit line current I 2 read out in the second cycle are influenced by the same offset potentials V O s which are subtracted in the evaluation unit 8 eliminate the two current values. This follows:
- the memory circuit according to the invention has the advantage that the circuit area can be saved since instead of a separate sense amplifier for the reference resistance element 6 only a single sense amplifier is used for both the reference resistance element 6 and the CBRAM resistance elements 2 Both the reference resistor element 6, and the CBRAM resistor elements 2 are located on the same bit line.
- the parasitic currents resulting from the offset voltage are eliminated by the parallel resistors R P by the method.
- FIG. 4 shows a further embodiment of a sense amplifier and a rating unit.
- the evaluation unit 8 differs in that, instead of the comparator 18 and the compensation transistor 19, an output inverter circuit is provided in order to be connected to the drain terminal of the further field effect transistor 17 Signal (potential) to the output as output signal A to drive.
- the output inverter circuit is formed in this embodiment by means of a p-channel transistor 20 and an n-channel transistor 21, which are connected in series with each other.
- a control terminal of the p-channel transistor 20 is connected to a fixed bias voltage V bias to set the pull-up current path of the inverter.
- a control terminal of the n-channel field effect transistor 21 of the output inverter circuit is connected to the drain terminal of the further field effect transistor 17, so that an output signal applied to the drain terminal of the further field effect transistor 17 is amplified inversely by the inverter circuit.
- the use of such a Ausgagns- inverter circuit is sufficient in the present circuit, since due to the large resistance ratio between the different states of the CBRAM resistance elements associated resistance values, a relatively low gain of the signal at the drain terminal of the other field effect sistor 17 is sufficient to provide the output signal A.
- FIGS. 5a to 5c show possible embodiments of the reference resistance element 6.
- the reference resistance element 6 is formed by two CBRAM resistance elements which are set to a resistance value R c0 which corresponds to the relatively low resistance value of the CBRAM resistance elements.
- the CBRAM resistive elements are connected in series so that a resistance is formed which is twice the relatively low resistance value and thus lies between the low resistance value and the relatively high resistance value.
- FIG. 5b shows a further possibility for a construction of a reference resistance element. It has four CBRAM resistance elements, wherein two series-connected CBRAM resistance elements with the relatively high resistance value R cl and two series-connected CBRAM resistance elements with the relatively low resistance value R c0 are connected in parallel to each other.
- the reference resistance element 6 it is possible to form the reference resistance element 6 with two CBRAM resistance elements connected in parallel with each other, one of the CBRAM resistance elements having a relatively high resistance R c i and the other CBRAM resistance element having a relatively low resistance R c o is provided. Since the resultant resistance value is smaller than the relatively low resistance value of a CBRAM resistance element, a potential different from the activation potential of the voltage sources 3 can be used as the activation potential V akt generated by the reference voltage source 7.
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Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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JP2007500195A JP2007525781A (ja) | 2004-12-02 | 2005-11-23 | メモリ回路、およびcbram抵抗メモリセルのメモリデータを評価するための評価方法 |
US11/582,347 US20070091667A1 (en) | 2004-12-02 | 2006-10-18 | Memory circuit as well as method for evaluating a memory datum of a CBRAM resistance memory cell |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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DE102004058132.0 | 2004-12-02 | ||
DE102004058132A DE102004058132B3 (de) | 2004-12-02 | 2004-12-02 | Speicherschaltung sowie Verfahren zum Bewerten eines Speicherdatums einer CBRAM-Widerstandsspeicherzelle |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
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US11/582,347 Continuation US20070091667A1 (en) | 2004-12-02 | 2006-10-18 | Memory circuit as well as method for evaluating a memory datum of a CBRAM resistance memory cell |
Publications (1)
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WO2006058647A1 true WO2006058647A1 (de) | 2006-06-08 |
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PCT/EP2005/012542 WO2006058647A1 (de) | 2004-12-02 | 2005-11-23 | Speicherschaltung wie verfahren zum bewerten eines speicherdatums einer cbram-widerstandsspeicherzelle |
Country Status (6)
Country | Link |
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US (1) | US20070091667A1 (de) |
JP (1) | JP2007525781A (de) |
KR (1) | KR20070070152A (de) |
DE (1) | DE102004058132B3 (de) |
TW (1) | TWI299495B (de) |
WO (1) | WO2006058647A1 (de) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008059742A (ja) * | 2006-09-01 | 2008-03-13 | Qimonda Ag | メモリ回路 |
JP2020173879A (ja) * | 2019-04-10 | 2020-10-22 | ルネサスエレクトロニクス株式会社 | 半導体装置およびメモリの読み出し方法 |
JP2021509519A (ja) * | 2017-12-28 | 2021-03-25 | マイクロン テクノロジー,インク. | メモリセルをプリチャージするための技術 |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102006033915B3 (de) * | 2006-07-21 | 2007-12-13 | Infineon Technologies Ag | Verfahren und Speicherschaltung zum Betreiben einer Widerstandsspeicherzelle |
US8737151B2 (en) | 2007-07-26 | 2014-05-27 | Unity Semiconductor Corporation | Low read current architecture for memory |
US8064243B2 (en) * | 2007-11-13 | 2011-11-22 | Qimonda Ag | Method and apparatus for an integrated circuit with programmable memory cells, data system |
US20090213643A1 (en) * | 2008-02-26 | 2009-08-27 | Michael Angerbauer | Integrated Circuit and Method of Improved Determining a Memory State of a Memory Cell |
DE102008011069B4 (de) * | 2008-02-26 | 2012-01-26 | Qimonda Ag | Integrierte Schaltung sowie Verfahren zum verbesserten Bestimmen eines Speicherzustands einer Speicherzelle |
WO2010019440A1 (en) * | 2008-08-14 | 2010-02-18 | Nantero, Inc. | Nonvolatile nanotube programmable logic devices and nonvolatile nanoture field programmable gate arrays using same |
US9263126B1 (en) * | 2010-09-01 | 2016-02-16 | Nantero Inc. | Method for dynamically accessing and programming resistive change element arrays |
KR101068573B1 (ko) * | 2009-04-30 | 2011-09-30 | 주식회사 하이닉스반도체 | 반도체 메모리 장치 |
US20110084248A1 (en) * | 2009-10-13 | 2011-04-14 | Nanya Technology Corporation | Cross point memory array devices |
FR3025647B1 (fr) * | 2014-09-09 | 2018-01-05 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Dispositif et procede d'ecriture de donnees dans une memoire resistive |
FR3025648B1 (fr) * | 2014-09-09 | 2018-01-05 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Dispositif et procede d'ecriture de donnees dans une memoire resistive |
WO2016046980A1 (ja) * | 2014-09-26 | 2016-03-31 | 株式会社日立製作所 | 半導体記憶装置 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6317376B1 (en) * | 2000-06-20 | 2001-11-13 | Hewlett-Packard Company | Reference signal generation for magnetic random access memory devices |
US6445612B1 (en) * | 2001-08-27 | 2002-09-03 | Motorola, Inc. | MRAM with midpoint generator reference and method for readout |
US20030209971A1 (en) * | 2000-02-11 | 2003-11-13 | Kozicki Michael N. | Programmable structure, an array including the structure, and methods of forming the same |
US20040001383A1 (en) * | 2002-06-28 | 2004-01-01 | Garni Bradley J | Sense amplifier and method for performing a read operation in a MRAM |
US20040004856A1 (en) * | 2002-07-04 | 2004-01-08 | Nec Corporation | Magnetic random access memory |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5872739A (en) * | 1997-04-17 | 1999-02-16 | Radiant Technologies | Sense amplifier for low read-voltage memory cells |
JP4434527B2 (ja) * | 2001-08-08 | 2010-03-17 | 株式会社東芝 | 半導体記憶装置 |
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2004
- 2004-12-02 DE DE102004058132A patent/DE102004058132B3/de not_active Expired - Fee Related
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2005
- 2005-10-20 TW TW094136787A patent/TWI299495B/zh active
- 2005-11-23 WO PCT/EP2005/012542 patent/WO2006058647A1/de active Application Filing
- 2005-11-23 JP JP2007500195A patent/JP2007525781A/ja not_active Abandoned
- 2005-11-23 KR KR1020077001442A patent/KR20070070152A/ko active IP Right Grant
-
2006
- 2006-10-18 US US11/582,347 patent/US20070091667A1/en not_active Abandoned
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030209971A1 (en) * | 2000-02-11 | 2003-11-13 | Kozicki Michael N. | Programmable structure, an array including the structure, and methods of forming the same |
US6317376B1 (en) * | 2000-06-20 | 2001-11-13 | Hewlett-Packard Company | Reference signal generation for magnetic random access memory devices |
US6445612B1 (en) * | 2001-08-27 | 2002-09-03 | Motorola, Inc. | MRAM with midpoint generator reference and method for readout |
US20040001383A1 (en) * | 2002-06-28 | 2004-01-01 | Garni Bradley J | Sense amplifier and method for performing a read operation in a MRAM |
US20040004856A1 (en) * | 2002-07-04 | 2004-01-08 | Nec Corporation | Magnetic random access memory |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008059742A (ja) * | 2006-09-01 | 2008-03-13 | Qimonda Ag | メモリ回路 |
JP2021509519A (ja) * | 2017-12-28 | 2021-03-25 | マイクロン テクノロジー,インク. | メモリセルをプリチャージするための技術 |
US11238907B2 (en) | 2017-12-28 | 2022-02-01 | Micron Technology, Inc. | Techniques for precharging a memory cell |
US11887689B2 (en) | 2017-12-28 | 2024-01-30 | Micron Technology, Inc. | Techniques for precharging a memory cell |
JP2020173879A (ja) * | 2019-04-10 | 2020-10-22 | ルネサスエレクトロニクス株式会社 | 半導体装置およびメモリの読み出し方法 |
Also Published As
Publication number | Publication date |
---|---|
KR20070070152A (ko) | 2007-07-03 |
US20070091667A1 (en) | 2007-04-26 |
TWI299495B (en) | 2008-08-01 |
DE102004058132B3 (de) | 2006-03-02 |
JP2007525781A (ja) | 2007-09-06 |
TW200620294A (en) | 2006-06-16 |
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