WO2006054915A1 - Procede de fabrication de micro- et nano-instruments sur des substrats locaux - Google Patents

Procede de fabrication de micro- et nano-instruments sur des substrats locaux Download PDF

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Publication number
WO2006054915A1
WO2006054915A1 PCT/RU2005/000270 RU2005000270W WO2006054915A1 WO 2006054915 A1 WO2006054915 A1 WO 2006054915A1 RU 2005000270 W RU2005000270 W RU 2005000270W WO 2006054915 A1 WO2006054915 A1 WO 2006054915A1
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WO
WIPO (PCT)
Prior art keywords
substrate
layer
structures
sacrificial layer
active layers
Prior art date
Application number
PCT/RU2005/000270
Other languages
English (en)
Russian (ru)
Inventor
Alexandr Viktorovich Prints
Viktor Yakovlevich Prints
Original Assignee
Alexandr Viktorovich Prints
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alexandr Viktorovich Prints filed Critical Alexandr Viktorovich Prints
Publication of WO2006054915A1 publication Critical patent/WO2006054915A1/fr

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C99/00—Subject matter not provided for in other groups of this subclass
    • B81C99/0075—Manufacture of substrate-free structures
    • B81C99/0095—Aspects relating to the manufacture of substrate-free structures, not covered by groups B81C99/008 - B81C99/009

Definitions

  • the trend of modern solid-state technology is the development of nanoscale, an increase in the accuracy of manufacturing devices and an increase in packing density.
  • a decrease in size leads to an increase in the fields and, accordingly, to an increase in the influence of the substrate on the operation of the device.
  • the substrate material should be significantly different from the material of the device and conventional semiconductor or semi-insulating semiconductor substrates do not meet the requirements.
  • different substrates will be optimal for different devices. For example, for the manufacture of nanodevices, insulating substrates, such as silicon on an insulator, are required.
  • SUBSTITUTE SHEET (RULE 26) which leads to the movement of the film from the active layers of the group to a local substrate intended for this group.
  • SUBSTITUTE SHEET (RULE 26) 7. If necessary, you can remove the layer with internal elastic stress directly on the instrument structure using selective and / or metered etching.
  • An epitaxial structure was grown on an InAs substrate: a sacrificial AlAs layer of 5 nm, an InAs layer of 2 nm, an InGaAs layer of 3 nm.
  • a local substrate was made: In the places where it was planned to have local substrates, all the upper layers of the epitaxial structure were removed to a depth of 200 nm (or more).
  • An insulator, for example, 200 nm Si 3 N 4 was sprayed through the resist in the formed recess, (Fig. 2a, 5), so that the level of the local insulating substrate approximately coincided with the level of the main structure. A structure with a local insulating substrate was obtained. Or if not

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Micromachines (AREA)

Abstract

L'invention concerne la fabrication de micro- et nano-instruments qui regroupent dans un seul circuit des structures d'instruments, disposées sur des substrats locaux différents (isolants, réfléchissant la lumière, conducteurs, magnétiques, etc.); il s'agit de réunir sur une seule puce (un substrat) des structures d'instruments différents dont les particularités demandent un regroupement sur des substrats ayant des propriétés différentes. L'invention permet de regrouper spatialement des structures d'instruments qu'il est difficile ou impossible de fabriquer sous une forme déjà regroupée. Grâce au regroupement dans les limites d'un seul substrat, avec l'utilisation de processus d'auto-organisation, on atteint une plus grande précision qu'en cas de regroupement de deux substrats différents. La solution proposée offre des possibilités de fabrication d'instruments différents sur une puce unique, le regroupement des instruments et des substrats se faisant de façon autonome. L'invention permet ainsi de fabriquer des micro- et nano-instruments par la formation d'une structure multicouches qui contient au moins une couche sacrificielle et des couches actives qui servent à fabriquer les structures d'instruments; on élimine la couche sacrificielle et l'on transfère le film qui s'est libéré du lien avec le substrat, constitué de couches actives, y compris de celles contenant des structures d'instruments, sur un nouveau substrat. Ce dernier diffère par ses propriétés du substrat initial. Le nouveau substrat est fabriqué localement, sur un seul substrat avec des couches actives et des structures d'instruments. La structure multicouches est formée de manière à contenir également au moins une couche avec une contrainte interne souple, qui est disposée directement sous ou sur les couches actives. Une fois la couche sacrificielle éliminée par un procédé dirigé dans une région déterminée, le film constitué de couches actives, y compris de celles contenant les structures d'instruments fabriqués, est libéré de sa liaison avec le substrat. Sous l'effet des contraintes internes souples, il change de forme et se déplace vers un nouveau substrat local.
PCT/RU2005/000270 2004-11-17 2005-05-16 Procede de fabrication de micro- et nano-instruments sur des substrats locaux WO2006054915A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
RU2004133486/28A RU2267832C1 (ru) 2004-11-17 2004-11-17 Способ изготовления микро- и наноприборов на локальных подложках
RU2004133486 2004-11-17

Publications (1)

Publication Number Publication Date
WO2006054915A1 true WO2006054915A1 (fr) 2006-05-26

Family

ID=35872628

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/RU2005/000270 WO2006054915A1 (fr) 2004-11-17 2005-05-16 Procede de fabrication de micro- et nano-instruments sur des substrats locaux

Country Status (2)

Country Link
RU (1) RU2267832C1 (fr)
WO (1) WO2006054915A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2553828C1 (ru) * 2014-03-05 2015-06-20 Федеральное государственное бюджетное учреждение науки Институт физики полупроводников им. А.В. Ржанова Сибирского отделения Российской академии наук (ИФП СО РАН) Светодиод и способ его изготовления

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6274007B1 (en) * 1999-11-25 2001-08-14 Sceptre Electronics Limited Methods of formation of a silicon nanostructure, a silicon quantum wire array and devices based thereon
RU2179458C2 (ru) * 1999-06-01 2002-02-20 Институт физики полупроводников СО РАН Микроигла в интегральном исполнении и способ ее изготовления
WO2003099707A2 (fr) * 2002-05-07 2003-12-04 Universite Claude Bernard Lyon I Procede pour modifier les proprietes d'une couche mince et substrat faisant application du procede

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2179458C2 (ru) * 1999-06-01 2002-02-20 Институт физики полупроводников СО РАН Микроигла в интегральном исполнении и способ ее изготовления
US6274007B1 (en) * 1999-11-25 2001-08-14 Sceptre Electronics Limited Methods of formation of a silicon nanostructure, a silicon quantum wire array and devices based thereon
WO2003099707A2 (fr) * 2002-05-07 2003-12-04 Universite Claude Bernard Lyon I Procede pour modifier les proprietes d'une couche mince et substrat faisant application du procede

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
SASAKI Y ET AL: "High-speed CaAs epitaxial lift-off bonding with high aligment accuracy using a saphire plate.", JOURNAL OF ELECTROCHEMICAL SOCIETY., vol. 146, no. 2, 1999 *

Also Published As

Publication number Publication date
RU2267832C1 (ru) 2006-01-10

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