Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
  • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
  • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
  • H01L21/6833—Details of electrostatic chucks
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
  • B65G—TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
  • B65G2201/00—Indexing codes relating to handling devices, e.g. conveyors, characterised by the type of product or load being conveyed or handled
  • B65G2201/02—Articles
  • B65G2201/0294—Vehicle bodies
• • G—PHYSICS
  • G02—OPTICS
  • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
  • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
  • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
  • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
  • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
  • G02F1/1333—Constructional arrangements; Manufacturing methods
  • G02F1/133354—Arrangements for aligning or assembling substrates
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
  • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
  • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices

Definitions

• glass substrates such as CF glass and TFT glass are adsorbed and held in a vacuum during the manufacturing process of flat panel displays such as liquid crystal displays (LCDs) and plasma displays (PDPs).
• LCDs liquid crystal displays
• PDPs plasma displays
• the present invention relates to an electrostatic chuck for a vacuum bonding apparatus used for bonding.
• the present invention relates to an electrostatic chuck for a vacuum bonding apparatus that includes two or more electrodes and a dielectric layer that covers the electrode, and holds the dielectric layer in vacuum in contact with a glass substrate by suction.
• Patent Document 1 Japanese Patent Application Laid-Open No. 2003-273194 (Page 2-3, Figure 1- Figure 2)
• the comb electrode has a narrow width dimension
• the invention described in claim 1 is intended to achieve stable adsorption holding while preventing damage to the electrostatic adsorption function part due to the penetration of foreign matter.
• the invention according to claim 1 of the present invention is characterized in that the thickness dimension of the dielectric layer is 50 to 200 ⁇ m.
• the invention described in claim 2 is characterized in that the electrode has a two-pole comb-like structure, and the width dimension of the comb-teeth electrode is 0.5 to 1.5 mm.
• the invention described in claim 3 is characterized in that the electrode has a two-pole comb-teeth structure, and the interval between the comb-teeth electrodes is set to 0.5 to 1.5 mm.
• the above-described electrostatic chuck for a vacuum bonding apparatus is provided on both or only one of the opposing surfaces of a pair of upper and lower holding plates, and holds and opposes the glass substrates so that the two glass substrates are vacuumed.
• the invention according to claim 1 is characterized in that the smaller the thickness dimension of the dielectric layer, the electrostatic adsorption Although the force increases, the physical strength becomes extremely weak at less than 50 m, and the electrode is exposed due to the penetration of foreign matter between the glass substrate and may cause plasma discharge at a certain timing in the vacuum. On the other hand, if the thickness is greater than 200 m, the electrostatic adsorption force decreases, so even if an adsorption force exceeding the weight of the glass substrate is obtained, the airflow generated around it and the glass substrate The thickness of the dielectric layer is set to 50 to 200 ⁇ m because there is a risk of falling due to variations in adsorption force.
• the dielectric layer is too thin, the electrostatic adsorption function part is likely to be damaged due to the penetration of foreign matters.Damage to the glass substrate due to plasma discharge can prevent the decrease in electrostatic adsorption force compared to the conventional one. Durability is improved and it can be used for a long period of time, improving reliability.
• the width dimension of the comb-shaped electrode is narrower than 0.5 mm, electric field concentration occurs, and there is a high possibility of dielectric breakdown or disconnection. If the width is larger than mm, the total amount of the bipolar electric field that becomes the root of the attractive force will decrease, and the electrostatic attractive force will decrease and may fall. Therefore, the width of the comb-shaped electrode was set to 0.5 to 1.5 mm. .
• the width of the comb-shaped electrode is too narrow, and electric field concentration occurs, resulting in the possibility of dielectric breakdown or wire breakage.
• the yield and reliability can be improved compared to conventional ones.
• the gap between the comb-shaped electrodes is too narrow, resulting in electric field concentration and dielectric breakdown. Yield and reliability can be improved compared to conventional products that have a high possibility of occurrence of breakage or disconnection.
• an electrostatic chuck A force electrode 1 for a vacuum bonding apparatus has an electrostatic adsorption function unit 1 in which a dielectric layer lb is laminated on the surface of a la.
• the electrode la has a two-pole comb-teeth structure, and the width dimension L of the comb-teeth electrode la and the interval S between the comb-teeth electrodes la are set within a predetermined range (experimental force described later). By setting the distance within the range of 0.5 to 1.5 mm, it is preferable to prevent accidents such as dielectric breakdown and disconnection and achieve good adsorption and holding of the glass substrate (insulating substrate) B at the same time.
• a base material layer 2 is provided so as to cover the electrode la with an adhesive layer 2a such as an adhesive material or an adhesive in between.
• an adhesive layer 2a such as an adhesive material or an adhesive in between.
• the surface of the base member 3 formed in a plate shape with a hard insulating material such as engineering plastic or ceramics or a metal such as aluminum is attached with an adhesive layer 4 such as an adhesive or adhesive sandwiched between them. It is done.
• the dielectric layer lb and the base material layer 2 will be described later by using a cushioning organic material such as polyimide, polyetheretherketone (PEEK), polyethylene naphthalate (PEN) or the like as the main constituent material.
• a cushioning organic material such as polyimide, polyetheretherketone (PEEK), polyethylene naphthalate (PEN) or the like.
• PEEK polyetheretherketone
• PEN polyethylene naphthalate
• the electrostatic chuck A is a holding plate C, D which is a force such as a surface plate arranged opposite to the vertical direction in a vacuum bonding apparatus for manufacturing a liquid crystal display or a plasma display, for example. It is incorporated by attaching to almost the entire surface or part of only one or both of the opposite surfaces of the electrostatic chuck A, and the electrostatic chuck A is made of, for example, TFT glass or CF glass.
• the glass substrate B is sucked and held so as to face each other, and the two substrates B and B are adjusted and moved relative to each other in the XY 0 direction, and then they are brought into close contact with each other in a vacuum.
• each electrostatic chuck A as shown in FIGS. 1 (a) and 1 (b) is formed in a rectangle smaller than the size of the glass substrate B, and is formed on the opposing surfaces of the upper and lower holding plates C and D.
• a plurality of electrostatic chucks A are arranged in parallel with each other close to each other, and each surface is arranged in a plane so that pressure unevenness does not occur. Divide and hold the entire surface of a large glass substrate B, B over 1000mm in size!
• each electrostatic chuck A On the back surface of each electrostatic chuck A, an input terminal (not shown) communicating with the electrode la is provided. ) Is exposed, and on the opposite surface side of the upper and lower holding plates C and D, there is an output terminal (not shown) on the device side that leads to the high voltage power supply and the input terminal of each electrostatic chuck A
• the upper and lower holding plates C and D are brought closer to each other or the upper substrate B is forcibly separated from the upper electrostatic chuck A and the annular adhesive on the lower substrate B ( (Seal material)
• the liquid crystal is sealed and overlapped between the two, and then the atmosphere in the closed space E is returned to atmospheric pressure, so that the inside and outside of both substrates B and B
• the bonding process is completed by pressurizing between the substrates B and B to a predetermined gap by the generated pressure difference.
• the thickness of the dielectric layer lb An electrostatic chuck with a dimension T of 40 to 210 / zm, an electrostatic chuck with a width L of the comb-shaped electrode la and an interval S between the comb-shaped electrodes la of 0.4 to 1.6 mm are prepared for the liquid crystal substrate.
• Tables 1 to 3 below show the results of adsorption experiments on CF glass with color filters, TFT glass with TFT elements, and basic glass used for testing.
• test glasses of the same size were made from the CF glass, TFT glass, and raw glass, and these test glasses were brought into contact with the respective electrostatic chucks and pulled up under the same conditions. The electrostatic attraction force was measured sequentially.
• Table 1 shows the electrostatic adsorption force (unit: mN) when the test glass having CF glass force is pulled up by each electrostatic chuck.
• Table 2 shows the electrostatic attraction force (unit: mN) when the test glass with TFT glass force is pulled up by each electrostatic chuck.
• Table 3 shows the electrostatic adsorption force (unit: mN) when the test glass, which has a glass strength, is pulled up by each electrostatic chuck.
• the dielectric layer lb becomes a very thin film having a thickness of less than 50 m
• the surface of the dielectric layer lb is brought into contact with the glass substrate B to be adsorbed and held, even if a minute foreign matter is present between the two. If it enters the surface, for example, by adhering to the surface, the electrostatic adsorption force generated around this foreign material squeezes into the dielectric layer lb, and the surface of the thin dielectric layer lb is damaged. If the electrode la is exposed and the electrode la is energized in this exposed state, it may cause a plasma discharge at a certain timing in the vacuum. For this reason, electrostatic chuck A cannot be used in a pressure region where discharge is easily caused by a Noschen curve.
• the thickness dimension T of the dielectric layer lb T force 3 ⁇ 400 m thicker, the strength increases.
• the electrostatic adsorption force decreases, so the adsorption force more than the weight of the glass substrate B.
• the closed space E force may drop due to variations in airflow and suction force during evacuation.
• the thickness T of the dielectric layer lb is suitably about 50 to 200 / ⁇ ⁇ .
• an adsorption force greater than the weight of the glass substrate B can be obtained in the range of 0.5 to 1.5 mm, but when it becomes narrower than 0.5 mm, electric field concentration occurs. There is a high possibility of dielectric breakdown and disconnection.
• the width of the comb-shaped electrode la is larger than 1.5 mm, and the total amount of the two-pole electric field that is the source of the attractive force decreases, so that the electrostatic attractive force decreases and the glass substrate B Even if an adsorption force greater than its own weight is obtained, there is a risk of falling due to the air current generated around it when vacuuming or variations in the adsorption force to the glass substrate B.
• an adsorption force equal to or greater than the self-weight of the glass substrate B is obtained in the range of 0.5 to 1.5 mm. If it is narrower than 0.5mm, the voltage difference between adjacent ones is large because of the bipolar type, so there is a high possibility of dielectric breakdown or disconnection.
• the width dimension L of the comb-shaped electrode la and the interval S between the comb-shaped electrodes la are appropriately about 0.5 to 1.5 mm, which is equivalent to the electrode pattern formation process. is there.
• the force shown in the case where the electrostatic chuck A for the vacuum bonding apparatus is a bipolar electrostatic chuck having the two-pole comb-teeth electrode la is limited to this.
• the electrode la may be other than the comb-tooth type or two or more electrodes.
• the plate-like laminated structure is not limited, If at least the electrostatic attraction function unit 1 exists, other structures such as integration of the base member 3 and the holding plates C and D of the vacuum bonding apparatus may be used.
• a plurality of electrostatic chucks A are arranged in parallel on the opposing surfaces of the upper and lower holding plates C and D, but are not limited to this.
• One electrostatic chuck A may be disposed over substantially the entire facing surface.
• the method of applying a high voltage to the electrode la of the electrostatic chuck A is not limited to the above-described method, and other energization methods may be used.
• FIG. 1 (a) is a longitudinal sectional view of an electrostatic chuck for a vacuum bonding apparatus showing an embodiment of the present invention, and (b) is a cross-sectional plan view showing an enlarged main part. It is.
• Electrostatic adsorption function part la electrode (comb-shaped electrode)

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• Engineering & Computer Science (AREA)
• Physics & Mathematics (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• General Physics & Mathematics (AREA)
• Manufacturing & Machinery (AREA)
• Computer Hardware Design (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Power Engineering (AREA)
• Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
• Liquid Crystal (AREA)
• Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Applications Claiming Priority (2)

Publications (1)

Family

ID=36406952

Family Applications (1)

Country Status (3)

Cited By (1)

Families Citing this family (2)

Citations (2)

• 2004
  • 2004-10-29 JP JP2004316174A patent/JP2008027927A/ja not_active Withdrawn
• 2005
  • 2005-10-11 WO PCT/JP2005/018678 patent/WO2006054406A1/ja not_active Application Discontinuation
  • 2005-10-28 TW TW094137736A patent/TW200631120A/zh unknown

Patent Citations (2)

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