WO2006011517A1 - 半導体基板の製造方法および半導体基板 - Google Patents
半導体基板の製造方法および半導体基板 Download PDFInfo
- Publication number
- WO2006011517A1 WO2006011517A1 PCT/JP2005/013744 JP2005013744W WO2006011517A1 WO 2006011517 A1 WO2006011517 A1 WO 2006011517A1 JP 2005013744 W JP2005013744 W JP 2005013744W WO 2006011517 A1 WO2006011517 A1 WO 2006011517A1
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- WO
- WIPO (PCT)
- Prior art keywords
- layer
- germanium
- sil
- silicon germanium
- composition ratio
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 70
- 238000000034 method Methods 0.000 title claims abstract description 59
- 239000004065 semiconductor Substances 0.000 title claims abstract description 22
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims abstract description 127
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims abstract description 82
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 56
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 56
- 238000004519 manufacturing process Methods 0.000 claims description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 22
- 229910052710 silicon Inorganic materials 0.000 claims description 22
- 239000010703 silicon Substances 0.000 claims description 22
- 238000012545 processing Methods 0.000 claims description 15
- 230000007547 defect Effects 0.000 abstract description 2
- 229910006990 Si1-xGex Inorganic materials 0.000 abstract 2
- 229910007020 Si1−xGex Inorganic materials 0.000 abstract 2
- 230000001105 regulatory effect Effects 0.000 abstract 2
- 239000010410 layer Substances 0.000 description 103
- 239000001301 oxygen Substances 0.000 description 30
- 229910052760 oxygen Inorganic materials 0.000 description 30
- -1 oxygen ions Chemical class 0.000 description 21
- 238000005468 ion implantation Methods 0.000 description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 9
- 238000000137 annealing Methods 0.000 description 8
- 235000012431 wafers Nutrition 0.000 description 6
- 239000012212 insulator Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 235000014121 butter Nutrition 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26533—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically inactive species in silicon to make buried insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76243—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using silicon implanted buried insulating layers, e.g. oxide layers, i.e. SIMOX techniques
Definitions
- the present invention relates to a method of manufacturing a semiconductor substrate to be a strained SOI wafer substrate, and a semiconductor substrate manufactured by the manufacturing method.
- Strained SOI wafers are manufactured by epitaxially growing a silicon Si layer on an SGOI (Silicon Germanium On Insulator) substrate.
- SGOI substrate is manufactured by forming a silicon germanium SiGe layer on the buried oxide film.
- the conventional SGOI substrate manufacturing method includes:
- the bonding method of 1) above uses Balta-strained Si produced by the tilt method as a bonding wafer, and the manufacturing process is complicated and expensive, and the SiGe layer has a high dislocation density. There is a problem of becoming.
- the SIMOX method 2 has a relatively simple manufacturing process and low cost.
- a silicon substrate 11 is prepared (FIG. 1 (a)), and a silicon germanium Sil—xGex layer 12 having a compositional ratio of germanium Ge is formed on the silicon substrate 11 by epitaxial growth. ( Figure l (b)).
- the buried oxide film 14 is exposed on the shim.
- the SGOI substrate 10 on which the recongermanium Sil—yGey layer 15 is formed is manufactured.
- oxygen ions O + having a predetermined dose are implanted into the silicon substrate 11 on which the silicon germanium Sil—xGex layer 12 is grown by an ion implantation apparatus.
- oxygen ions 0 + ion implantation layer 13 of a predetermined dose it is formed between the silicon substrate 11 and the silicon germanium SIL-xGex layer 12 '(FIG. 1 (c)) 0
- the ion-implanted oxygen ions 0+ react with silicon Si to form Si02, and the ion-implanted layer 13 changes to a buried oxide film 14 under the silicon germanium Sil-xGex layer 12 '.
- the silicon germanium Sil—xGex layer 12 ′ before the high-temperature annealing treatment diffuses germanium Ge constituting the layer 12 ′ into the butter due to the high-temperature annealing, and reacts with oxygen in the silicon SS atmosphere constituting the layer 12 ⁇ .
- This silicon germanium Sil—yGey layer 15 is called the SGOI (silicon germanium on insulator) layer (Fig. 1 (d)).
- the SGOI substrate 10 is completed.
- the germanium Ge concentration of the 15 is higher than a certain level in order to satisfy the performance (high speed performance) as a semiconductor device. Must be a concentration.
- germanium Ge diffuses into the butter. For this reason, it has been common technical knowledge to epitaxially grow a silicon germanium Si 1 xGex layer 12 previously mixed with Ge at a high concentration before oxygen ion implantation. It was common knowledge in the art that the composition ratio X of germanium Ge in the silicon germanium Sil—xGex layer 12 should be as high as 0.1 (10%) and 0.2 (20%).
- Patent Document 1 Japanese Patent Laid-Open No. 2001-148473 discloses a technique for forming a silicon germanium layer on a buried oxide film. In order to prevent oxidation and contamination of the surface of the silicon germanium layer, the surface of the silicon germanium layer is hydrogen-terminated. A technique for forming a protective layer by processing is disclosed. The composition ratio of germanium Ge in the silicon germanium layer is described as 0, 10%, 20%, and 30% in relation to the minimum concentration of the hydrofluoric acid solution necessary for the hydrogen termination treatment. Patent Document 1 describes that the composition ratio of germanium Ge in the silicon germanium layer before the formation of the buried oxide film is 20%.
- Patent Document 1 Japanese Patent Laid-Open No. 2001-148473
- a high-quality semiconductor substrate (SGOI substrate 10) in which the dislocation density of the silicon germanium Sil-yGey layer (SGOI layer) 15 on the buried oxide film 14 is reduced can be manufactured by the SIMOX method. This is a problem to be solved.
- a layer of silicon germanium Sil—xGex (where x is the composition ratio of germanium Ge) is formed on the silicon substrate, and after further processing by the SIMOX method, silicon germanium Sil—yGey (y is germanium) is formed on the buried oxide film.
- composition ratio X of the germanium Ge of the silicon germanium layer Sil-xGex before the SIMOX method is less than a predetermined value at which the dislocation density of the silicon germanium layer Sil-yGy after the SIMOX method is a predetermined level or less. Adjust to the composition ratio,
- the second invention is the first invention
- the dislocation density of the silicon germanium layer Sil-yGey after processing by the SIMOX method is adjusted to a yarn ratio X of 106 cm-2 or less. It is characterized by.
- the third invention is the first invention or the second invention
- composition ratio X of germanium Ge in the silicon germanium layer Sil—xGex before processing by the SIMOX method is 0.05 (5%) or less.
- the fourth invention provides
- a layer of silicon germanium Sil—xGex (where x is the composition ratio of germanium Ge) is formed on the silicon substrate, and after processing by the SIMOX method, silicon germanium Sil—yGey (y is germanium Ge) is formed on the buried oxide film.
- composition ratio X of the germanium Ge in the silicon germanium layer Sil—xGex before the treatment by the SIMOX method is defined as the composition ratio x in which the dislocation density of the silicon germanium layer Sil—yGey after the treatment by the SIMOX method is 106 cm-2 or less.
- a semiconductor substrate having a dislocation density of 106 cm-2 or less of the silicon germanium layer Sil-yGey prepared by adjusting to the above is characterized in that it is a semiconductor substrate.
- the present inventor has found that the dislocation density of the silicon germanium layer Sil—yGey 15 after the SIMOX method is affected by the composition ratio X of germanium Ge in the silicon germanium Sil—xGex layer 12 before the SIMOX method. (See FIG. 2), the inventors discovered that the lower the composition ratio X of germanium Ge, the lower the dislocation density (see FIG. 3), and the present invention could be achieved.
- the conventional technique compared with the conventional technique described in Patent Document 1, the conventional technique requires a composition ratio of germanium Ge for hydrogen termination treatment for the purpose of preventing oxidation and contamination of the surface of the silicon germanium layer.
- Patent Document 1 describes conventional technical common knowledge that the composition ratio of germanium Ge in the silicon germanium layer before the formation of the buried oxide film is 20%. This description describes the dislocation density.
- the present invention contrary to the conventional common sense that the composition ratio of germanium Ge in the silicon germanium layer before the formation of the buried oxide film is reduced in order to reduce it. This knowledge is not suggested at all.
- the composition ratio X of germanium Ge in the silicon germanium Sil—xGex layer 12 before the SIMOX method is set, and the dislocation density of the silicon germanium Sil—yGey layer 15 after the SIMOX method is predetermined. Since the SGOI substrate was manufactured by adjusting the composition ratio to a level below the specified value, the dislocation density of the silicon germanium Sil-yGey layer (S GOI layer) 15 was sufficiently reduced, and high-quality SGOI A substrate 10 is obtained.
- the dislocation density of the silicon germanium Sil-yGey layer (SGOI layer) 15 after processing by the SIMOX method is adjusted to a composition ratio X of 106 cm-2 or less (see Fig. 3; second invention). .
- the composition ratio X of germanium Ge in the silicon germanium Sil—xGex layer 12 before processing by the SIMOX method is set to 0.05 (5%) or less so that the dislocation density is reduced in the SOI substrate. Since it is considered that the region falls, it is possible to sufficiently reduce the dislocation density (below the measurement limit) in the dose window region (see Fig. 2), and the dislocation is at least in this dose window region. Can be sufficiently suppressed (third invention).
- the fourth invention is an SGOI substrate manufactured by the manufacturing method of the first invention, and the feature of the substrate is that the silicon germanium Sil-yGey layer (SGOI layer) 15 is manufactured by the manufacturing method.
- the dislocation density force is 106 cm-2 or less.
- FIGS. 1 (a), (b), (c), and (d) show the manufacturing steps of the embodiment, and conceptually show a cross section of the substrate.
- a silicon substrate 11 is prepared (FIG. 1 (a)), and a silicon germanium Sil—xGex layer 12 having a germanium Ge composition ratio X is epitaxially formed on the silicon substrate 11. It is formed by growth (Fig. 1 (b)).
- the SGOI substrate 10 in which the silicon germanium Sil—yGey layer 15 is formed on the buried oxide film 14 is manufactured through the SIMOX method shown in FIGS. 1 (c) and 1 (d).
- oxygen ions O + having a predetermined dose number of ions per unit area
- an ion implantation layer 13 of oxygen ions 0 + having a predetermined dose is formed between the silicon substrate 11 and the silicon germanium Sil—xGex layer 12 ′.
- the silicon germanium Sil—xGex layer 12 changes to a thin layer 12 ′ (FIG. 1 (c)).
- This silicon germanium Sil—yGey layer 15 is called the SGOI (silicon germanium on insulator) layer (Fig. 1 (d)).
- Figure 2 shows that the dislocation density of the silicon germanium Sil—yGey layer 15 after the SIMOX process affects the composition ratio X of germanium Ge in the silicon germanium Sil—xGex layer 12 before the SIMOX process. It is a graph which shows receiving.
- the horizontal axis in FIG. 2 is the dose amount (1017 / cm 2) of oxygen ions 0 + ion-implanted in the oxygen ion implantation step in FIG. 1 (c), and the vertical axis is the value after processing by the SIMOX method.
- characteristics 20 and 21 indicated by solid lines indicate oxygen ions O when manufacturing an SOI substrate.
- the peak value of the dislocation density is low in the region where the oxygen ion O + dose is low.
- the dislocation density becomes 102 (cm ⁇ 2) or less at a certain oxygen ion 0 + dose value of 20a or more.
- the oxygen ion 0 + dose is further increased, as shown in the characteristic 21, the dislocation density rises to 102 (cm ⁇ 2) or more at a certain oxygen ion 0 + dose value 21a, and thereafter, the oxygen ion 0 + Dislocation density increases with increasing dose.
- characteristic 22 indicated by the broken line 22 and the characteristic 23 indicated by the alternate long and short dash line indicate that the amount of oxygen ions 0 + dose at the time of manufacturing the SGOI substrate and the silicon germanium Sil— on the buried oxide film 14
- the relationship with the dislocation density of yGey layer (SGOI layer) 15 is shown.
- Characteristic 22 is when the composition ratio X of germanium Ge is 10%
- characteristic 23 is when the composition ratio X of germanium Ge is 5%.
- the composition ratio X of germanium Ge X Is 10%, oxygen ions 0 + in a specific region (20a-21a) with a dose amount, the dislocation density is as high as 108 (cm-2).
- the composition of germanium Ge When the ratio X is 5%, the dislocation density in a specific region (20a to 21a) of oxygen ion 0 + dose amount turns to a low level of 10 6 (cm ⁇ 2) or less.
- the germanium Ge composition ratio X in the silicon germanium Sil—xGex layer 12 before the SIMOX process is reduced to 0.05 (5%) or less, so that the dislocation density is reduced in the SOI substrate. It is considered that the dislocation density can be sufficiently reduced in the region of the dose window (20a to 21a), and the dislocation is at least sufficient in the dose window region (20a to 21a). Can be suppressed.
- FIG. 3 is a graph showing that the dislocation density is reduced as the composition ratio X of germanium Ge is lowered.
- the horizontal axis in FIG. 3 is the concentration (composition ratio) x (%) of germanium Ge in the silicon germanium Sil—xGex layer 12 before the SIMOX process, and the vertical axis is the silicon after the SIMOX process.
- This is the dislocation density (cm-2) of germanium Sil—yGey layer (SGOI layer) 15.
- the characteristic 30 shown by the broken line shows the correlation between the germanium concentration (composition ratio) X and the dislocation density when the oxygen ion 0 + dose amount is 4 ⁇ 10 17 / cm 2.
- the dislocation density of the silicon germanium Sil—yGey layer (SGOI layer) 15 be 106 cm—2 or less.
- the silicon germanium layer Si 1 -xGex layer 12 before processing by the SIMOX method may be adjusted with the thread ratio x of germanium Ge!
- the composition ratio X of germanium Ge in the silicon germanium Sil—xGex layer 12 before the SIMOX method is calculated as the silicon germanium Sil— after the SIMOX method.
- the SGOI substrate 10 is manufactured by adjusting the composition ratio of the yGey layer 15 so that the dislocation density of the yGey layer 15 is a predetermined value or less. Thereby, the dislocation density of the silicon germanium Sil—yGey layer (SGOI layer) 15 is sufficiently lowered, and a high-quality SGOI substrate 10 can be obtained.
- the dislocation density of the silicon germanium layer Sil-yGey layer (SGOI layer) 15 after processing by the SIMOX method is adjusted to a composition ratio X of 106 cm-2 or less.
- the germanium Ge composition ratio X of the silicon germanium Sil—xGex layer 12 before the SIMOX method is set to 0.05 (5%) or less.
- the dislocation density is lowered in the SOI substrate, and the dislocation density can be sufficiently lowered (below the measurement limit) in the dose window region.
- the concentration (composition ratio) x (%) of germanium Ge in the silicon germanium Sil—xGex layer 12 shown in FIG. 1 (b) was adjusted to 0%, 5%, and 10%, respectively. Accordingly, the SGOI substrate 10 was manufactured under the following processing conditions.
- the epitaxial growth layer 12 has a thickness of 400 nm. It was.
- the acceleration voltage was set to 180 keV, and the substrate temperature was set to 550 ° C.
- Oxygen ions 0+ were implanted to make the dose amount 4 ⁇ 1017 / cm2.
- the SGOI substrate 10 in which the silicon germanium layer Sil-yGey layer (SGOI layer) 15 having a thickness of 320 nm was formed on the buried oxide film 14 having a thickness of 85 nm was obtained.
- Germanium Ge concentration (composition ratio) x (%) before treatment by SIMOX method corresponds to 0%, 5%, and 10%, respectively, after treatment by SIMOX method
- Germanium Ge concentration (composition ratio) y (%) is 0%, 2.7%, 5.4%, and defect densities are 103 or less, 106 or less, and 108 (cm-2), respectively. It was.
- FIGS. 1 (a), (b), (c), and (d) are diagrams showing a process of manufacturing an SGOI substrate by a SIMOX method.
- FIG. 2 is a graph showing the relationship between oxygen ion dose, germanium Ge concentration (composition ratio) and dislocation density.
- FIG. 3 is a graph showing the relationship between germanium Ge concentration (composition ratio) and dislocation density.
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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- Computer Hardware Design (AREA)
- High Energy & Nuclear Physics (AREA)
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Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006527825A JPWO2006011517A1 (ja) | 2004-07-30 | 2005-07-27 | 半導体基板の製造方法および半導体基板 |
DE112005001822T DE112005001822T5 (de) | 2004-07-30 | 2005-07-27 | Verfahren zum Herstellen eines Halbleitersubstrats und Halbleitersubstrat |
EP05767020A EP1806768A4 (en) | 2004-07-30 | 2005-07-27 | PROCESS FOR PRODUCING SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR SUBSTRATE |
US11/658,949 US20090170292A1 (en) | 2004-07-30 | 2005-07-27 | Method for producing semiconductor substrate and semiconductor substrate |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP2004223460 | 2004-07-30 | ||
JP2004-223460 | 2004-07-30 |
Publications (1)
Publication Number | Publication Date |
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WO2006011517A1 true WO2006011517A1 (ja) | 2006-02-02 |
Family
ID=35786267
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/JP2005/013744 WO2006011517A1 (ja) | 2004-07-30 | 2005-07-27 | 半導体基板の製造方法および半導体基板 |
Country Status (6)
Country | Link |
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US (1) | US20090170292A1 (ja) |
EP (1) | EP1806768A4 (ja) |
JP (1) | JPWO2006011517A1 (ja) |
DE (1) | DE112005001822T5 (ja) |
TW (1) | TWI267918B (ja) |
WO (1) | WO2006011517A1 (ja) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09321307A (ja) * | 1996-05-29 | 1997-12-12 | Toshiba Corp | 半導体装置 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000031491A (ja) * | 1998-07-14 | 2000-01-28 | Hitachi Ltd | 半導体装置,半導体装置の製造方法,半導体基板および半導体基板の製造方法 |
JP4212228B2 (ja) * | 1999-09-09 | 2009-01-21 | 株式会社東芝 | 半導体装置の製造方法 |
US6743651B2 (en) * | 2002-04-23 | 2004-06-01 | International Business Machines Corporation | Method of forming a SiGe-on-insulator substrate using separation by implantation of oxygen |
-
2005
- 2005-06-30 TW TW094122111A patent/TWI267918B/zh not_active IP Right Cessation
- 2005-07-27 DE DE112005001822T patent/DE112005001822T5/de not_active Withdrawn
- 2005-07-27 US US11/658,949 patent/US20090170292A1/en not_active Abandoned
- 2005-07-27 WO PCT/JP2005/013744 patent/WO2006011517A1/ja active Application Filing
- 2005-07-27 JP JP2006527825A patent/JPWO2006011517A1/ja active Pending
- 2005-07-27 EP EP05767020A patent/EP1806768A4/en not_active Withdrawn
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09321307A (ja) * | 1996-05-29 | 1997-12-12 | Toshiba Corp | 半導体装置 |
Also Published As
Publication number | Publication date |
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TW200608490A (en) | 2006-03-01 |
JPWO2006011517A1 (ja) | 2008-05-01 |
EP1806768A1 (en) | 2007-07-11 |
TWI267918B (en) | 2006-12-01 |
DE112005001822T5 (de) | 2007-06-14 |
EP1806768A4 (en) | 2007-11-28 |
US20090170292A1 (en) | 2009-07-02 |
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