WO2006011339A1 - 光受信装置 - Google Patents
光受信装置 Download PDFInfo
- Publication number
- WO2006011339A1 WO2006011339A1 PCT/JP2005/012480 JP2005012480W WO2006011339A1 WO 2006011339 A1 WO2006011339 A1 WO 2006011339A1 JP 2005012480 W JP2005012480 W JP 2005012480W WO 2006011339 A1 WO2006011339 A1 WO 2006011339A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- light receiving
- frame
- substrate
- receiving element
- receiving device
- Prior art date
Links
- 239000000758 substrate Substances 0.000 claims description 76
- 230000003287 optical effect Effects 0.000 claims description 26
- 230000000694 effects Effects 0.000 abstract description 10
- 238000004891 communication Methods 0.000 description 14
- 239000000463 material Substances 0.000 description 14
- 230000017525 heat dissipation Effects 0.000 description 10
- 230000008646 thermal stress Effects 0.000 description 7
- 238000007789 sealing Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 230000003321 amplification Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000003199 nucleic acid amplification method Methods 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 239000013307 optical fiber Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000011359 shock absorbing material Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000006855 networking Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000000191 radiation effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/024—Arrangements for cooling, heating, ventilating or temperature compensation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Definitions
- the present invention relates to, for example, an optical receiver used for optical communication.
- an optical fiber as a communication medium and a transmitting and receiving device for transmitting and receiving light are required.
- a transmitter is a device that converts a communication signal into an optical signal and sends it to an optical fiber.
- a light emitting diode (LED) or a semiconductor laser (LD) is generally used as a light source for converting into an optical signal.
- An optical signal can be obtained by modulating and driving these light sources according to the communication signal.
- a receiving device is a device that receives an optical signal emitted from a transmitting device via an optical fiber.
- the receiving device incorporates a light receiving element that converts an optical signal into an electrical signal.
- a light receiving element a semiconductor element generally called a photodiode is used. This is an element having a characteristic that when a light having a wavelength within the light receiving sensitivity range enters the light receiving portion, a current called photocurrent flows according to the incident light intensity.
- the photocurrent output from the photodiode is often processed as a voltage signal after current Z voltage conversion processing.
- the output of the light receiving element is a weak signal, it is necessary to amplify and use it later by the amplification unit, and it is necessary to have a high amplification factor of the amplification unit. Therefore, it is a part susceptible to noise.
- i) conventionally place the noise source and the light receiving part apart .
- ii) Cover the light receiving portion with a conductive shield member. Such measures are generally taken.
- the operating temperature it can not be assumed to be used near room temperature like general equipment, and a wide range of operating environmental temperature is required. In particular, operation on the high temperature side is required, and a device with high heat dissipation that can ensure stable operation at high temperatures is required.
- the light transmitting sealing resin excluding the light receiving portion is Ni-plated.
- a light receiving element is mounted on a flexible substrate, and only the surface in the incident direction to this light receiving element is noise-shielded with a grounding pad. There is.
- a light transmitting sealing resin excluding the light receiving portion is plated with Ni, but the manufacturing process therefor is And an intermediate member such as a masking tape. Furthermore, due to the addition of this process, there is a concern that the product yield will decrease, which inevitably increases production costs. With regard to heat dissipation, although a translucent sealing resin is interposed from the heat source (light receiving element) to the Ni paste portion, generally, the translucent sealing resin has poor heat conduction. Therefore, the heat dissipation improvement effect is not good.
- an object of the present invention is to provide an optical receiver having an effective noise shielding effect, high heat dissipation, and capable of achieving miniaturization.
- an optical receiver according to the present invention is
- a light receiving element disposed on the surface of the substrate opposite to the frame so as to have the light receiving unit and the light receiving unit overlap the opening of the frame.
- the surface of the light receiving element on the opposite side to the light receiving portion side, and the frame are characterized in that they are grounded or connected to a power supply potential.
- the light receiving portion refers to a portion of the light receiving element that actually responds to light
- one surface of the light receiving element on the light receiving portion side refers to a light receiving surface
- the other surface opposite to the one surface of the light receiving element on the light receiving portion side and the frame are grounded or connected to the power supply potential.
- a GND potential or power supply potential (of the above frame) on one surface side of the element, and the other surface of the light receiving element is also the GND potential or power supply potential.
- the light receiving portion or the like of the light receiving element is sandwiched between the GND potential or the power supply potential to form a shield structure of the GND potential or the power supply potential with respect to the light receiving element.
- the effect of noise shielding on the light receiving circuit of the light receiving element can be obtained.
- the frame also serves to generate the GND potential or the power source potential on one surface side of the light receiving element, a separate member for producing a noise shielding effect is not necessary.
- the device can be miniaturized.
- the frame can effectively dissipate the heat generated by the light receiving element. Therefore, it is possible to realize an optical receiver that has an effective noise shielding effect, high efficiency, and heat dissipation, and can be miniaturized.
- the substrate has light transmissivity.
- the substrate since the substrate has light transmissivity, the strength of the device can be improved while reliably receiving a light beam by the light receiving element.
- the substrate has an opening at a position overlapping the light receiving portion of the light receiving element.
- the substrate since the substrate has an opening, it is possible to select a material having a thermal conductivity better than a light transmitting material as the material of the substrate. Ready
- the heat dissipation can be improved.
- the opening of the frame, the opening of the substrate, and the light receiving portion of the light receiving element are arranged substantially coaxially.
- the opening of the frame, the opening of the substrate, and the light receiving portion of the light receiving element are disposed substantially coaxially, the amount of incident light can be reduced.
- the light can be efficiently incident on the light receiving unit, and the light receiving efficiency of the light receiving unit can be improved.
- the linear expansion coefficient of the substrate is a value between the linear expansion coefficient of the frame and the linear expansion coefficient of the light receiving element.
- the linear expansion coefficient of the substrate is a value between the linear expansion coefficient of the frame and the linear expansion coefficient of the light receiving element. It has a function as a shock absorbing material against thermal stress due to the frame and the light receiving element due to change, and can extend the use temperature range.
- the linear expansion coefficient of the substrate is a value closer to the linear expansion coefficient of the light receiving element than the linear expansion coefficient of the frame.
- the linear expansion coefficient of the substrate is a value closer to the linear expansion coefficient of the light receiving element than the linear expansion coefficient of the frame. The stress can be reduced to prevent the breakage of the light receiving element.
- the frame has a recess around the opening of the frame on one side of the frame, and the substrate is disposed in the recess of the frame. It is done.
- the frame (the part having the GND potential or the power supply potential) and the other surface of the light receiving element are provided.
- the distance to (a portion having the GND potential or the power supply potential) can be further shortened, and the noise shielding effect can be enhanced.
- the depth dimension of the concave portion of the frame is larger than the thickness dimension of the substrate.
- the depth dimension of the concave portion of the frame is larger than the thickness dimension of the substrate, the influence of the substrate on the hermeticity of the shield can be minimized. be able to.
- FIG. 1A is a side cross-sectional view showing a first embodiment of the light receiving device of the present invention.
- FIG. 1B is a plan view of the light receiving device of the present invention.
- FIG. 1C is a plan view of a substrate.
- FIG. 1D is a bottom view of a light receiving element.
- FIG. 2 is a side sectional view showing a second embodiment of the light receiving device of the present invention.
- FIG. 3 A side sectional view showing a third embodiment of the light receiving device of the present invention.
- FIG. 1A shows a side cross-sectional view which is an embodiment of the light receiving device of the present invention.
- FIG. 1B shows a plan view of the light receiving device of the present invention.
- This optical receiver comprises a conductive frame 1 having an opening 8, an electrically insulating substrate 5 disposed in the vicinity of the opening 8 of the frame 1 of the bracket on one surface of the frame 1, and a light receiving portion And a light receiving element 2 disposed on one surface of the substrate 5 opposite to the frame 1 so that the light receiving portion 3 overlaps the opening 8 of the frame 1.
- the frame 1 is made of a conductive material such as metal, and is connected to a ground frame la, a light reception output frame lb connected to the light reception output, and a power supply voltage. And a power supply frame lc.
- the opening 8 is provided in the GND frame la, and for example, a light beam from a light transmitting apparatus (not shown) can be passed through the opening 8.
- the substrate 5 is made of a material having electrical insulation and is disposed on one surface of the GND frame la opposite to the incident direction of the light beam on the GND frame la (indicated by the arrow). It is done.
- the light receiving element 2 is disposed on one surface of the substrate 5 opposite to the incident direction of the light beam on the substrate 5 (shown by the arrow). Then, at least a part of the light beam having passed through the opening 8 of the frame 1 passes through the substrate 5 and is received by the light receiving element 2. That is, the substrate 5 has optical transparency, and the substrate 5 is, for example, a glass substrate.
- the light receiving element 2 receives at least a part of the incident light having passed through the opening 8.
- a semiconductor such as a photodiode is used.
- the light receiving portion 3 of the light receiving element 2 is a portion that actually responds to light in the light receiving element 2.
- the shape of the opening 8 of the frame 1 is not particularly limited, it may be a shape that allows light to pass through the light receiving portion 3 of the light receiving element 2. Therefore, the light receiving unit 3 is disposed so as to receive at least a part of the light passing through the opening 8.
- the opening 8 of the frame 1 and the light receiving unit 3 of the light receiving element 2 are preferably arranged substantially coaxially.
- the light receiving element 2 one called an optical semiconductor such as a photodiode may be used, but in recent years, peripheral circuits such as a photodiode and an output amplification unit of a photodiode are integrated ( IC) is used for convenience.
- an optical semiconductor such as a photodiode
- peripheral circuits such as a photodiode and an output amplification unit of a photodiode are integrated ( IC) is used for convenience.
- FIG. 1D is a bottom view of the light receiving element 2 as viewed from the light receiving unit 3 (light receiving surface) side.
- the light receiving element 2 has a signal electrode (pad) 7 on the same surface as the light receiving surface.
- the electrode 7 has an electrode 7 a for GND, an electrode 7 b for output signal, and an electrode 7 c for power supply.
- the light receiving portion 3 of the light receiving element 2 is Use the one with the GND potential on the other side (rear side) opposite to the one side.
- the back surface of the light receiving element 2 (IC) may also have a force power supply voltage which is usually a GND potential. in this case
- the frame 1 is also set to the power supply voltage.
- FIG. 1C shows a plan view of the substrate 5 as viewed from one side.
- the light receiving element 2 is used as the substrate
- a conductive pattern 6 is disposed on the surface (one surface) of the substrate 5 on the light receiving element 2 side so that the signal from the electrode 7 of the light receiving element 2 can be taken out when mounted on the 5. Be done.
- the pattern 6 includes a GND pattern 6a, an output signal pattern 6b, and a power supply pattern 6c.
- the wire 4 has a first wire 4a, a second wire 4b, a third wire 4c and a fourth wire 4d.
- the GND electrode 7 a of the light receiving element 2, the GND pattern 6 a of the substrate 5, and the GND frame la are provided via the first wire 4 a. And are electrically connected.
- the output signal electrode 7b of the light receiving element 2, the output signal pattern 6b of the substrate 5, and the light reception output frame lb are electrically connected to each other through the second wire 4b. There is.
- the power supply electrode 7c of the light receiving element 2, the power supply pattern 6c of the substrate 5 and the power supply frame lc are electrically connected via the third wire 4c.
- the other surface (rear surface) of the light receiving element 2 and the frame for GND la are electrically connected via the fourth wire 4d.
- the fourth wire 4d the back surface of the light receiving element 2 can be set to the GND potential at the same time by the first wire 4a. You may omit it.
- the other surface (rear surface) of the light receiving element 2 and the frame la for the GND are grounded, so one surface (front surface) of the light receiving element 2 is provided. Since the frame la for GND having the GND potential is arranged, and the back surface of the light receiving element 2 is also the GND potential, the light receiving portion 3 and the turn of the light receiving element 2 are exactly the same.
- the path section is structured to be sandwiched by the GND potential. This produces the effect of noise shielding.
- the thickness of the substrate 5 is too large, it means that the gap of the shield becomes large, so the thickness of the substrate 5 is preferably thin. If the thickness of the substrate 5 is excessively thin while the force is being applied, the thickness of the substrate 5 is set to an appropriate size because deformation or breakage due to thermal stress at high temperature of the substrate 5 is considered.
- the linear expansion coefficient of the substrate 5 is a value between the linear expansion coefficient of the frame 1 and the linear expansion coefficient of the light receiving element 2 is selected as the material of the substrate 5.
- the substrate 5 can have a function as a shock absorbing material against thermal stress by the frame 1 and the light receiving element 2 due to thermal change, and the use temperature range can be expanded.
- the linear expansion coefficient of the frame 1 is 17 ppm / k.
- the linear expansion coefficient of is 7. 7 ppm Zk
- the linear expansion coefficient of the light receiving element 2 is 2.8 ppm / k, and the above conditions can be satisfied.
- a material of the substrate 5 is selected in which the value of the linear expansion coefficient of the substrate 5 is closer to the linear expansion coefficient of the light receiving element 2 than the linear expansion coefficient of the frame 1.
- the thermal stress applied to the light receiving element 2 can be alleviated. This means that, as to which of the thermal stress applied to the frame 1 and the thermal stress applied to the light receiving element 2 should be reduced, the prevention of the thermal stress causing the breakage of the light receiving element 2 should be given priority. It is.
- the heat generated in the light receiving element 2 mainly flows through the substrate 5 to the frame 1 a for GND. Heat can further flow from the GND frame la to the periphery of the GND frame la and to the master board (not shown) on which the light receiving device is mounted, thereby enabling effective heat dissipation. .
- the substrate 5 is made of a material having a high thermal conductivity, the heat radiation effect is improved.
- glass is used as the substrate 5, and the glass has a good thermal conductivity as an electrically insulating material.
- the thermal conductivity of the frame 1 can be increased, and the heat dissipation can be further improved.
- FIG. 2 shows a second embodiment of the light receiving apparatus of the present invention.
- the substrate 5 has an opening 9 at a position overlapping the light receiving portion 3 of the light receiving element 2.
- the position and shape of the opening 9 of the substrate 5 may be any position and shape capable of transmitting at least a part of light incident through the opening 8 of the frame 1.
- the substrate 5 since the substrate 5 has the opening 9, it is possible to select a material having a thermal conductivity more than a light transmitting material as the material of the substrate 5, and to dissipate heat. Can improve
- the opening 8 of the frame 1, the opening 9 of the substrate 5, and the light receiving portion 3 of the light receiving element 2 be disposed substantially coaxially. Can be efficiently incident on the light receiving unit 3 and the light receiving efficiency of the light receiving unit 3 can be improved.
- FIG. 3 shows a third embodiment of the optical receiver according to the present invention.
- the frame 1 has a recess 10 around the opening 8 of the frame 1 on one side of the frame 1, and the substrate 5 is a recess of the frame 1. It is to be placed within 10. That is, the formation position of the recess 10 is approximately the mounting position of the substrate 5.
- the substrate 5 is disposed in the recess 10 of the frame 1, the substrate 1 (portion having the GND potential) and the other surface of the light receiving element 2 (portion having the GND potential) And the distance between the two) can be further shortened, and the noise shielding effect can be enhanced.
- the depth dimension d of the concave portion 10 of the frame 1 is set to be larger than the thickness dimension t of the substrate 5 to minimize the influence of the substrate 5 on the sealing property of the shield. be able to.
- the substrate 5 having the opening 9 is used, but the substrate 5 having the light transmitting property as shown in the first embodiment is used. Oh.
- the present invention is not limited to the above embodiment.
- the other surface (rear surface) of the light receiving element 2 and the frame la for GND are not If the potential is stable enough to be connected to the power supply voltage potential of the light receiving element 2, a noise shielding effect can be expected.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
Description
Claims
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/658,329 US20080298817A1 (en) | 2004-07-26 | 2005-07-06 | Light Receiving Device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004-217095 | 2004-07-26 | ||
JP2004217095A JP3756169B2 (ja) | 2004-07-26 | 2004-07-26 | 光受信装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2006011339A1 true WO2006011339A1 (ja) | 2006-02-02 |
Family
ID=35786090
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2005/012480 WO2006011339A1 (ja) | 2004-07-26 | 2005-07-06 | 光受信装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20080298817A1 (ja) |
JP (1) | JP3756169B2 (ja) |
CN (1) | CN1989625A (ja) |
WO (1) | WO2006011339A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103050602B (zh) * | 2011-10-11 | 2016-04-06 | 光宝电子(广州)有限公司 | 发光装置 |
CN106062968B (zh) | 2014-02-26 | 2018-08-03 | 日本电气株式会社 | 光学模块和数字相干接收器 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04142779A (ja) * | 1990-10-04 | 1992-05-15 | Fujitsu Ltd | 赤外線検知装置 |
JPH11121770A (ja) * | 1997-10-20 | 1999-04-30 | Sharp Corp | リモコン受光ユニット |
JPH11186570A (ja) * | 1997-12-22 | 1999-07-09 | Seitai Hikarijoho Kenkyusho:Kk | 受光素子パッケージ |
JP2002100785A (ja) * | 2000-07-18 | 2002-04-05 | Infineon Technologies Ag | 表面実装可能なオプトエレクトロニクスモジュールおよび該オプトエレクトロニクスモジュールを有するオプトエレクトロニクス結合ユニット |
JP2002164602A (ja) * | 2000-11-27 | 2002-06-07 | Seiko Epson Corp | 光モジュール及びその製造方法並びに光伝達装置 |
JP2002252357A (ja) * | 2001-02-22 | 2002-09-06 | Sunx Ltd | 光電センサ |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5731633A (en) * | 1992-09-16 | 1998-03-24 | Gary W. Hamilton | Thin multichip module |
US6281572B1 (en) * | 1997-12-05 | 2001-08-28 | The Charles Stark Draper Laboratory, Inc. | Integrated circuit header assembly |
JP2001358997A (ja) * | 2000-06-12 | 2001-12-26 | Mitsubishi Electric Corp | 半導体装置 |
JP2003309271A (ja) * | 2002-04-18 | 2003-10-31 | Matsushita Electric Ind Co Ltd | 集積回路素子の実装構造および実装方法 |
-
2004
- 2004-07-26 JP JP2004217095A patent/JP3756169B2/ja not_active Expired - Fee Related
-
2005
- 2005-07-06 WO PCT/JP2005/012480 patent/WO2006011339A1/ja active Application Filing
- 2005-07-06 US US11/658,329 patent/US20080298817A1/en not_active Abandoned
- 2005-07-06 CN CN200580024726.8A patent/CN1989625A/zh active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04142779A (ja) * | 1990-10-04 | 1992-05-15 | Fujitsu Ltd | 赤外線検知装置 |
JPH11121770A (ja) * | 1997-10-20 | 1999-04-30 | Sharp Corp | リモコン受光ユニット |
JPH11186570A (ja) * | 1997-12-22 | 1999-07-09 | Seitai Hikarijoho Kenkyusho:Kk | 受光素子パッケージ |
JP2002100785A (ja) * | 2000-07-18 | 2002-04-05 | Infineon Technologies Ag | 表面実装可能なオプトエレクトロニクスモジュールおよび該オプトエレクトロニクスモジュールを有するオプトエレクトロニクス結合ユニット |
JP2002164602A (ja) * | 2000-11-27 | 2002-06-07 | Seiko Epson Corp | 光モジュール及びその製造方法並びに光伝達装置 |
JP2002252357A (ja) * | 2001-02-22 | 2002-09-06 | Sunx Ltd | 光電センサ |
Also Published As
Publication number | Publication date |
---|---|
JP2006041083A (ja) | 2006-02-09 |
JP3756169B2 (ja) | 2006-03-15 |
CN1989625A (zh) | 2007-06-27 |
US20080298817A1 (en) | 2008-12-04 |
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