WO2006009278A3 - シリコンウエハ基板係止ステージ、シリコンウエハ基板温度測定法 - Google Patents

シリコンウエハ基板係止ステージ、シリコンウエハ基板温度測定法 Download PDF

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Publication number
WO2006009278A3
WO2006009278A3 PCT/JP2005/013559 JP2005013559W WO2006009278A3 WO 2006009278 A3 WO2006009278 A3 WO 2006009278A3 JP 2005013559 W JP2005013559 W JP 2005013559W WO 2006009278 A3 WO2006009278 A3 WO 2006009278A3
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WO
WIPO (PCT)
Prior art keywords
silicon wafer
wafer substrate
measured
temperature
piece
Prior art date
Application number
PCT/JP2005/013559
Other languages
English (en)
French (fr)
Other versions
WO2006009278A1 (ja
WO2006009278A2 (ja
Inventor
Yukihiro Murakami
Kazuo Asano
Ryuji Okamoto
Original Assignee
Intellectual Property Bank
T P S System Co Ltd
Icf Inc
Yukihiro Murakami
Kazuo Asano
Ryuji Okamoto
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intellectual Property Bank, T P S System Co Ltd, Icf Inc, Yukihiro Murakami, Kazuo Asano, Ryuji Okamoto filed Critical Intellectual Property Bank
Priority to JP2006529313A priority Critical patent/JP4099511B2/ja
Priority to AU2005264615A priority patent/AU2005264615A1/en
Priority to US11/631,648 priority patent/US20080043806A1/en
Priority to EP05766467A priority patent/EP1775758A2/en
Priority to CA002574116A priority patent/CA2574116A1/en
Publication of WO2006009278A1 publication Critical patent/WO2006009278A1/ja
Publication of WO2006009278A2 publication Critical patent/WO2006009278A2/ja
Publication of WO2006009278A3 publication Critical patent/WO2006009278A3/ja

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/02—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using thermoelectric elements, e.g. thermocouples
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/0003—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Sampling And Sample Adjustment (AREA)

Abstract

ランプヒータを備えたチャンバーに侵食性のあるガスを充満させ、当該侵食性のあるガス中で、赤外線透過率の高い処理物の温度を計測するために次の手段を執る。 ランプヒータの上部に取り付けたシリコンウエハ基板１枚を係止するためのステージ若しくはランプヒータの発光開放部側の石英等のエンクロージャー、に溝を掘り、埋め込もうとする熱電対が侵食性のあるガスに触れないような構造をとる。その際、上述の課題に対処するため、対処物と同等のものを、つまりシリコンウエハ基板片を熱電対に貼り付けるものとする。温度計測の時、ステージ表面上に置いた計測すべきシリコンウエハ基板とシリコンウエハ基板片との間の計測温度値の差異を事前に測定し、シリコンウエハ基板とシリコンウエハ基板片との間の熱容量の差を補正する。該装置と方法によって該シリコンウエハ基板の温度を計測することができる。
PCT/JP2005/013559 2004-07-23 2005-07-25 シリコンウエハ基板係止ステージ、シリコンウエハ基板温度測定法 WO2006009278A2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2006529313A JP4099511B2 (ja) 2004-07-23 2005-07-25 ステージおよびシリコンウエハ基板の温度計測法
AU2005264615A AU2005264615A1 (en) 2004-07-23 2005-07-25 Silicon wafer substrate locking stage and silicon wafer substrate temperature measuring method
US11/631,648 US20080043806A1 (en) 2004-07-23 2005-07-25 Stage for Holding Silicon Wafer Substrate and Method for Measuring Temperature of Silicon Wafer Substrate
EP05766467A EP1775758A2 (en) 2004-07-23 2005-07-25 Silicon wafer substrate locking stage and silicon wafer substrate temperature measuring method
CA002574116A CA2574116A1 (en) 2004-07-23 2005-07-25 Stage for holding silicon wafer substrate and method for measuring temperature of silicon wafer substrate

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004215957 2004-07-23
JP2004-215957 2004-07-23

Publications (3)

Publication Number Publication Date
WO2006009278A1 WO2006009278A1 (ja) 2006-01-26
WO2006009278A2 WO2006009278A2 (ja) 2006-01-26
WO2006009278A3 true WO2006009278A3 (ja) 2006-03-09

Family

ID=35785618

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2005/013559 WO2006009278A2 (ja) 2004-07-23 2005-07-25 シリコンウエハ基板係止ステージ、シリコンウエハ基板温度測定法

Country Status (9)

Country Link
US (1) US20080043806A1 (ja)
EP (1) EP1775758A2 (ja)
JP (1) JP4099511B2 (ja)
KR (1) KR20070083462A (ja)
CN (1) CN1989596A (ja)
AU (1) AU2005264615A1 (ja)
CA (1) CA2574116A1 (ja)
RU (1) RU2007106843A (ja)
WO (1) WO2006009278A2 (ja)

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US8345272B2 (en) * 2006-09-28 2013-01-01 Sharp Laboratories Of America, Inc. Methods and systems for third-party control of remote imaging jobs
JP5010370B2 (ja) * 2007-07-03 2012-08-29 助川電気工業株式会社 加熱プレート温度測定装置
CN101853774B (zh) * 2009-03-31 2012-06-06 北京北方微电子基地设备工艺研究中心有限责任公司 加热腔室及半导体加工设备
JP5585000B2 (ja) * 2009-05-22 2014-09-10 富士通セミコンダクター株式会社 半導体装置
US8492736B2 (en) 2010-06-09 2013-07-23 Lam Research Corporation Ozone plenum as UV shutter or tunable UV filter for cleaning semiconductor substrates
US20120211484A1 (en) * 2011-02-23 2012-08-23 Applied Materials, Inc. Methods and apparatus for a multi-zone pedestal heater
CN102288313B (zh) * 2011-08-15 2013-01-16 西北核技术研究所 一种热电偶与石墨件的粘接方法
US9157730B2 (en) * 2012-10-26 2015-10-13 Applied Materials, Inc. PECVD process
KR101605079B1 (ko) * 2015-05-20 2016-03-22 (주)울텍 급속 열처리 장치
US11476167B2 (en) 2017-03-03 2022-10-18 SCREEN Holdings Co., Ltd. Heat treatment method and heat treatment apparatus of light irradiation type
JP6432915B2 (ja) * 2017-03-15 2018-12-05 三菱電機株式会社 温度測定装置
KR20220003151A (ko) * 2019-06-03 2022-01-07 어플라이드 머티어리얼스, 인코포레이티드 비-접촉식 낮은 기판 온도 측정을 위한 방법
KR102311717B1 (ko) * 2019-12-13 2021-10-13 (주)울텍 급속 열처리장치
US11774298B2 (en) * 2020-02-12 2023-10-03 Tokyo Electron Limited Multi-point thermocouples and assemblies for ceramic heating structures
CN112212994A (zh) * 2020-09-25 2021-01-12 电子科技大学 一种等离子体刻蚀晶圆的温度分布检测装置
CN113899477B (zh) * 2021-12-07 2022-02-18 深圳市诺泰芯装备有限公司 一种测试温度校验治具及方法
CN115111929B (zh) * 2021-12-30 2023-01-10 拉普拉斯(无锡)半导体科技有限公司 一种高温硅片间接控温方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63226919A (ja) * 1987-03-16 1988-09-21 Nec Corp 気相成長装置
JPH04183862A (ja) * 1990-11-17 1992-06-30 Miyagi Oki Denki Kk 基板加熱装置
JPH06260687A (ja) * 1993-01-11 1994-09-16 Tokyo Electron Ltd ガス処理装置
JPH08191097A (ja) * 1995-01-11 1996-07-23 Touyoko Kagaku Kk 高速熱処理装置
JP2000306855A (ja) * 1999-04-26 2000-11-02 Hitachi Ltd 加熱装置

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Patent Citations (5)

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Publication number Priority date Publication date Assignee Title
JPS63226919A (ja) * 1987-03-16 1988-09-21 Nec Corp 気相成長装置
JPH04183862A (ja) * 1990-11-17 1992-06-30 Miyagi Oki Denki Kk 基板加熱装置
JPH06260687A (ja) * 1993-01-11 1994-09-16 Tokyo Electron Ltd ガス処理装置
JPH08191097A (ja) * 1995-01-11 1996-07-23 Touyoko Kagaku Kk 高速熱処理装置
JP2000306855A (ja) * 1999-04-26 2000-11-02 Hitachi Ltd 加熱装置

Also Published As

Publication number Publication date
JPWO2006009278A1 (ja) 2008-05-01
RU2007106843A (ru) 2008-09-10
WO2006009278A2 (ja) 2006-01-26
US20080043806A1 (en) 2008-02-21
EP1775758A2 (en) 2007-04-18
KR20070083462A (ko) 2007-08-24
AU2005264615A1 (en) 2006-01-26
CA2574116A1 (en) 2006-01-26
CN1989596A (zh) 2007-06-27
JP4099511B2 (ja) 2008-06-11

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