WO2005122644A1 - 有機半導体素子 - Google Patents
有機半導体素子 Download PDFInfo
- Publication number
- WO2005122644A1 WO2005122644A1 PCT/JP2005/010656 JP2005010656W WO2005122644A1 WO 2005122644 A1 WO2005122644 A1 WO 2005122644A1 JP 2005010656 W JP2005010656 W JP 2005010656W WO 2005122644 A1 WO2005122644 A1 WO 2005122644A1
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- WO
- WIPO (PCT)
- Prior art keywords
- layer
- organic
- organic semiconductor
- adhesive layer
- semiconductor device
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 62
- 239000010410 layer Substances 0.000 claims abstract description 166
- 239000012790 adhesive layer Substances 0.000 claims abstract description 92
- 229920001187 thermosetting polymer Polymers 0.000 claims abstract description 39
- 230000000694 effects Effects 0.000 claims abstract description 20
- 230000002411 adverse Effects 0.000 claims abstract description 15
- 239000012044 organic layer Substances 0.000 claims description 36
- 239000000758 substrate Substances 0.000 claims description 28
- 239000000853 adhesive Substances 0.000 claims description 27
- 230000001070 adhesive effect Effects 0.000 claims description 27
- 230000002093 peripheral effect Effects 0.000 claims description 24
- 150000001875 compounds Chemical class 0.000 claims description 12
- 125000006850 spacer group Chemical group 0.000 claims description 12
- 239000000945 filler Substances 0.000 claims description 11
- 229920000642 polymer Polymers 0.000 claims description 8
- 239000004593 Epoxy Substances 0.000 claims description 3
- 239000011810 insulating material Substances 0.000 claims description 3
- 239000002245 particle Substances 0.000 claims description 3
- 229920002396 Polyurea Polymers 0.000 claims description 2
- 229920000058 polyacrylate Polymers 0.000 claims description 2
- 229920001721 polyimide Polymers 0.000 claims description 2
- 125000006839 xylylene group Chemical group 0.000 claims description 2
- 239000004642 Polyimide Substances 0.000 claims 1
- 238000000926 separation method Methods 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 19
- 239000001301 oxygen Substances 0.000 abstract description 19
- 229910052760 oxygen Inorganic materials 0.000 abstract description 19
- 230000006866 deterioration Effects 0.000 abstract description 18
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 3
- 238000000016 photochemical curing Methods 0.000 abstract 2
- 238000007789 sealing Methods 0.000 description 51
- 239000010408 film Substances 0.000 description 35
- 239000011347 resin Substances 0.000 description 28
- 229920005989 resin Polymers 0.000 description 28
- 239000011521 glass Substances 0.000 description 20
- 230000017525 heat dissipation Effects 0.000 description 18
- 239000007789 gas Substances 0.000 description 17
- 239000000463 material Substances 0.000 description 17
- 238000000034 method Methods 0.000 description 15
- 238000002474 experimental method Methods 0.000 description 14
- 238000010438 heat treatment Methods 0.000 description 14
- 229910052751 metal Inorganic materials 0.000 description 14
- 239000002184 metal Substances 0.000 description 14
- 230000004888 barrier function Effects 0.000 description 13
- 230000005855 radiation Effects 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 239000003822 epoxy resin Substances 0.000 description 6
- 229920000647 polyepoxide Polymers 0.000 description 6
- 230000001965 increasing effect Effects 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- -1 silicon nitrides Chemical class 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000001133 acceleration Effects 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 4
- 229910001873 dinitrogen Inorganic materials 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 230000001678 irradiating effect Effects 0.000 description 4
- 239000011368 organic material Substances 0.000 description 4
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 4
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 4
- 239000004925 Acrylic resin Substances 0.000 description 3
- 229920000178 Acrylic resin Polymers 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 230000020169 heat generation Effects 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- 239000002985 plastic film Substances 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 241000872198 Serjania polyphylla Species 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 229910001507 metal halide Inorganic materials 0.000 description 2
- 150000005309 metal halides Chemical class 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 239000004831 Hot glue Substances 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- XWUPANOEJRYEPL-UHFFFAOYSA-N barium(2+);oxygen(2-);titanium(4+);zirconium(4+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Ba+2] XWUPANOEJRYEPL-UHFFFAOYSA-N 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- KOPBYBDAPCDYFK-UHFFFAOYSA-N caesium oxide Chemical compound [O-2].[Cs+].[Cs+] KOPBYBDAPCDYFK-UHFFFAOYSA-N 0.000 description 1
- 229910001942 caesium oxide Inorganic materials 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 238000005338 heat storage Methods 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000009545 invasion Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910001512 metal fluoride Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000010943 off-gassing Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 239000005871 repellent Substances 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XTQHKBHJIVJGKJ-UHFFFAOYSA-N sulfur monoxide Chemical class S=O XTQHKBHJIVJGKJ-UHFFFAOYSA-N 0.000 description 1
- 229910052815 sulfur oxide Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/02—Details
- H05B33/04—Sealing arrangements, e.g. against humidity
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/841—Self-supporting sealing arrangements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/842—Containers
- H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/842—Containers
- H10K50/8428—Vertical spacers, e.g. arranged between the sealing arrangement and the OLED
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/87—Arrangements for heating or cooling
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/28—Web or sheet containing structurally defined element or component and having an adhesive outermost layer
- Y10T428/2848—Three or more layers
Definitions
- the present invention relates to an organic semiconductor element having a film sealing structure, particularly to an organic electroluminescent element, and more particularly to an organic semiconductor element having a novel structure capable of achieving both film sealing and heat radiation.
- An organic electroluminescent (hereinafter, referred to as an organic EL) element which is a kind of organic semiconductor element, is a self-luminous surface light source, which is thin, light, and has a wide viewing angle. It is expected to be applied to a wide range of fields such as displays.
- a general organic EL element has, for example, an element part in which a transparent electrode, an organic layer including at least a light emitting layer, and a cathode are laminated in this order on a transparent substrate as an anode, and a current is applied to the organic layer. The light generated by the above is taken out from the back side of the substrate.
- an organic layer or the like constituting an organic EL element is generally composed of an extremely unstable organic material, it has a disadvantage that it is easily deteriorated by the influence of oxygen, moisture, and the like. Short life is a problem. Therefore, it is necessary to take measures to prevent oxygen and moisture existing around the organic EL element from entering the element.
- an element portion including an organic layer is sealed with a metal or glass sealing can.
- a structure in which a void inside the sealed can is filled with an inert gas such as nitrogen gas is employed.
- an organic EL device having a structure sealed with a sealing can it is necessary to perform sealing with a sealing can for each element, thereby improving workability, productivity, and manufacturing.
- seal the periphery of the element section including the organic layer with a sealing can There is also a problem that it is difficult to cool the element due to the structure.
- mounting a structure with high thermal conductivity so as to be in contact with the element part including the organic layer in order to enhance the heat dissipation effect requires an organic EL element with a thin mechanical thickness of several hundred nm and poor mechanical strength. Is not easy.
- the sealing can also has the function of radiating the heat generated in the laminate, since an inert gas with low thermal conductivity is interposed between the laminate containing the organic layer and the sealing can, the The heat dissipation effect is very low.
- Japanese Patent No. 3334408 and Japanese Patent No. 3405335 disclose the main focus is on the film sealing structure, and little consideration is given to heat dissipation.
- Japanese Patent No. 3405335 discloses that a plastic plate or a metal plate is stacked on a film sealing structure, but does not assume any function as a heat sink.
- the optimization of the structure for efficient heat dissipation and the structure for achieving both film sealing and heat dissipation is completely unexpected.
- the heat sink When a heat sink is directly provided on the sealing film, the heat sink is usually attached using an adhesive or the like. In this case, however, the environment at the time of curing adversely affects the organic EL element. The effect has been great. For example, when a photo-curable adhesive is used, the ultraviolet light irradiated for curing the adhesive is simultaneously irradiated on the organic EL element, which causes deterioration of organic substances in the organic EL element portion. When a thermosetting adhesive is used, the force that needs to be heated during curing The outgas generated at this time penetrates into the sealing film and reaches the organic EL element, which also degrades the organic EL element become. The conventional technology does not recognize any adverse effect on the organic EL element at the time of bonding, and has not taken any measures against it.
- the present invention has been proposed in view of such a conventional situation, and aims to optimize the structure so as to achieve both sealing and heat dissipation, and to reduce oxygen, moisture, and the like. It is an object of the present invention to provide an organic semiconductor element that can reliably shut off light and that can efficiently release heat. Another object of the present invention is to provide an organic semiconductor device capable of suppressing an adverse effect when a heat sink is bonded and suppressing deterioration of an organic semiconductor device portion (organic EL device). .
- an organic semiconductor element according to the present invention has an organic semiconductor element portion formed on a substrate, which is covered with a flattening layer, and heat is radiated on the flattening layer.
- the board is fixed by an adhesive layer, and a shield layer is formed between the adhesive layer and the flattening layer to block an adverse effect on the organic semiconductor element portion when the adhesive layer is cured.
- a film sealing structure is adopted in which the organic semiconductor element portion is sealed with thin films such as a flat layer and a shield layer.
- thin films such as a flat layer and a shield layer.
- a heat sink is fixed on the sealing film via an adhesive layer. Therefore, heat generated in the organic semiconductor element portion is quickly transmitted to the heat sink through the sealing film, and efficient heat dissipation is performed.
- the bonding of the radiator plate may adversely affect the organic EL element portion.
- the structure of the sealing film covering the organic semiconductor element is optimized.
- the sealing film has a laminated structure in which the function is separated into a flattening layer covering the organic semiconductor element and a shield layer covering the flattening layer. Layer having a function to be selected.
- the shield layer blocks light used for curing the photocurable adhesive layer. Since the shield layer blocks light (mainly ultraviolet light) when the adhesive layer is cured, the light when the adhesive layer is cured does not reach the organic semiconductor layer under the shield layer, so that the deterioration of the organic semiconductor layer due to the light is ensured. Is suppressed.
- the shield layer blocks outgas generated when the thermosetting adhesive layer is cured. Since the shield layer blocks the gas generated when the thermosetting adhesive layer is cured, the deterioration of the organic semiconductor layer under the shield layer due to the gas is reliably suppressed.
- a flattening layer is arranged between the organic semiconductor device portion and the shield layer.
- the organic semiconductor element portion is sealed with a thin film, and a heat sink is adhered on the sealing film, so that penetration of oxygen, moisture, and the like into the organic semiconductor element is ensured. It actually shuts off and efficient heat radiation is realized. Therefore, deterioration of the organic semiconductor element portion due to abnormal heat generation and intrusion of oxygen, moisture, and the like inside the organic semiconductor element is suppressed, and it is possible to provide an organic semiconductor element having a longer life. is there.
- the organic semiconductor element of the present invention by providing the flattening layer and the shield layer as the sealing film provided on the organic semiconductor element portion, the adverse effect when fixing the heat sink is reduced. Thus, it is possible to reliably prevent the organic semiconductor element portion from being interrupted by the shield layer and to prevent the organic semiconductor element portion from deteriorating when the heat sink is fixed.
- FIG. 1 is a schematic cross-sectional view showing one example of an organic EL device to which the present invention is applied.
- FIG. 2 is a schematic sectional view showing another example of the organic EL device to which the present invention is applied.
- FIG. 3 is a characteristic diagram showing current density versus luminance characteristics of an organic EL device using a UV-curable epoxy resin for an adhesive layer.
- FIG. 4 is a photograph showing a light emitting state of an organic EL device in which a thermosetting resin is used for an adhesive layer and a shield layer (A1) is formed.
- FIG. 5 is a photograph showing a light emitting state of an organic EL device in which a thermosetting resin is used for an adhesive layer and a shield layer is not formed.
- FIG. 6 is a photograph showing an initial light emitting state of the organic EL element in which the outer peripheral edge of the heat radiating plate and the outer peripheral edge of the shield layer have a positional relationship such that they match when viewed from a plane. .
- FIG. 7 is a photograph showing a light emitting state of the organic EL device shown in FIG. 6 after an acceleration test.
- FIG. 8 is a characteristic diagram showing current density and surface temperature characteristics of an organic EL element using a glass cap for sealing and an organic EL element using a heat sink for sealing.
- FIG. 9 is a photograph showing the difference in noria between an organic EL element using a UV-curable adhesive and an organic EL element using a sheet-like thermosetting adhesive.
- FIG. 10 is a photograph showing how the characteristics change over time when the heat treatment temperature of the organic EL element is set to 110 ° C. and 120 ° C.
- an organic semiconductor device to which the present invention is applied will be described in detail with reference to the drawings.
- an organic electroluminescent (hereinafter, simply referred to as an organic EL) device will be described as an example of an organic semiconductor device, but the present invention is not limited to this and requires sealing and heat radiation measures. Needless to say, it can be applied to any organic semiconductor device.
- FIG. 1 is a sectional view of an organic EL device 1 of the present invention.
- the organic EL element 1 is composed of an element part 6 in which an anode 3, an organic layer 4 formed of one or more kinds of organic materials and a cathode 5 are laminated in this order on a substrate 2, and a surface of the element part 6. , A shield layer 8 laminated on the flat layer 7, an adhesive layer 9 provided on the shield layer 8, and a bonding layer 9. And a heat sink 10 bonded to the surface.
- light emitted from the light emitting layer in the organic layer 4 is extracted from the back surface of the substrate 2 of the organic EL device 1 as shown by an arrow A.
- the substrate 2 is not particularly limited, but a substrate having optical transparency such as glass or plastic is used.
- the element section 6 formed on the substrate 2 is constituted by, for example, laminating an anode 3, an organic layer 4, and a cathode 5 in this order.
- the anode 3 is formed by depositing a light-transmitting conductive material such as ITO (indium tin oxide) or indium zinc oxide by, for example, sputtering.
- the organic layer 4 stacked on the anode 3 is, for example, a layer in which a hole injection layer, a light emitting layer, an electron injection layer, and the like are sequentially stacked from the anode 3 side.
- the organic layer 4 has a structure in which a hole transport layer exists between the light emitting layer and the hole injection layer, a structure in which an electron transport layer exists between the light emitting layer and the electron injection layer, and the like. May be a single layer. Further, the structure of the organic layer 4 is not limited to the above-described structure, but can be various structures.
- the cathode 5 to be superimposed on the organic layer 4 is formed by depositing a metal such as aluminum or an alloy by sputtering evaporation or the like.
- the anode 3, the organic layer 4, and the cathode 5 are formed on, for example, a solid surface, and the area (light emitting area) of the region where the anode 3, the organic layer 4, and the cathode 5 overlap is, for example, It is 100 mm 2 (for example, 10 mm X 10 mm square) or more.
- the flat layer 7 covering the element section 6 is formed from the viewpoint of improving the film quality of the shield layer 8 formed thereon and enhancing the barrier properties of the shield layer 8, from the step or unevenness of the surface of the element section 6. In addition, smoothness for uniformly covering a pinhole or the like is required.
- the planarizing layer 7 has a gas barrier property for protecting the element section 6 from oxygen, moisture, and the like, and a high and thermal conductivity for quickly transmitting heat generated from the element section 6 to the heat sink 10. It is preferable to have.
- organic insulating materials such as xylylene-based polymer compounds, polyimide-based polymer compounds, acrylic polymer compounds, epoxy-based polymer compounds, and polyurea-based polymer compounds can be prepared by CVD methods such as plasma CVD. It is preferable to form the flat layer 7 by forming a film by a gas phase method (drive opening process) such as a PVD method such as resistance heating evaporation. For example, there is a method of forming the flattening layer by a wet process such as coating.However, a solvent used for dissolving the material for forming the flattening layer 7 and moisture contained in the solvent have an adverse effect on the element section 6. May be affected.
- the shield layer 8 is stacked on the flat layer 7.
- the shield layer 8 is required to have a function of blocking an adverse effect on the element section 6 such as the organic layer 4 when the adhesive layer 9 is hardened.
- the adhesive layer 9 is a photocurable adhesive layer obtained by curing a photocurable resin such as a UV curable resin or a visible light curable resin
- the UV light used for curing the photocurable adhesive layer is used. It is preferable to form the shield layer 8 so as to absorb or reflect light such as light or visible light and block it.
- Materials that block light used for curing the photocurable adhesive layer include metals such as aluminum, gold, and silver; metal oxides such as zinc oxide, titanium oxide and cesium oxide; and metals such as barium sulfate. At least one kind of sulfur oxides, barium titanate, barium titanate zirconate, strontium titanate and the like can be used. Among them, it is preferable to use metals such as aluminum, gold, silver and the like because of their excellent noria property.
- Light hard By blocking the light such as UV light used for curing the adhesive layer with the shield layer 8, the element section 6 is protected from the light used when the adhesive layer 9 is cured, and the heat sink 10 is fixed. In addition, deterioration of the organic layer 4 and the like can be suppressed.
- the adhesive layer 9 is a thermosetting adhesive layer obtained by curing a thermosetting resin
- outgas generated from the thermosetting resin when the thermosetting adhesive layer is cured is shut off. It is preferable to form the shield layer 8.
- the material having a gas barrier property that blocks gas generated from the thermosetting resin include a material that blocks light used when the photocurable adhesive layer is hardened, magnesium fluoride, calcium fluoride, and fluoride.
- Metal fluorides such as lithium, metal nitrides such as aluminum nitride, silicon nitrides such as silicon dioxide, silicon nitrides such as silicon nitride, etc. Can be used.
- metals such as aluminum, gold, and silver, metal nitrides such as aluminum nitride, silicon oxides such as silicon dioxide, It is preferable to use silicon nitrides such as silicon nitride.
- metals such as aluminum, gold, and silver
- metal nitrides such as aluminum nitride, silicon oxides such as silicon dioxide
- silicon nitrides such as silicon nitride.
- the film configuration of the flattening layer 7 and the shield layer 8 described above may basically be formed by laminating one shield layer 8 on one flattening layer 7, but is not limited thereto.
- one or both of the flat layer 7 and the shield layer 8 may be formed as two or more layers.
- a film configuration in which three layers are stacked in the order of the shield layer 8, the flattening layer 7, and the shield layer 8, or three layers are stacked in the order of the flattening layer 7, the shield layer 8, and the flat layer 7 are used. Can be mentioned. Further, it is also possible to form a pair of the flat layer 7 and the shield layer 8 and repeatedly laminate a plurality of these.
- the adhesive layer 9, which is the adhesive layer 9 formed thereon, is provided with a resin material such as a photo-curable resin or a thermosetting resin, specifically, an acrylic resin.
- a resin material such as a photo-curable resin or a thermosetting resin, specifically, an acrylic resin.
- a molecular compound, an epoxy polymer compound, or the like can be used.
- the range of choice of the heat radiating plate 10 described later is widened, and it is possible to use a metal or alloy plate having high thermal conductivity, and as a result, the storage life (barrier property) is also improved.
- the adhesive layer 9 having a uniform thickness can be formed even in an organic EL element having a large light emitting area, for example.
- a sheet-like thermosetting adhesive a so-called hot melt adhesive
- the sheet-like thermosetting adhesive exhibits fluidity when heated, and exhibits adhesiveness.
- the element structure has a multi-layer structure of thin films, and high fluidity is required in order to obtain good coverability. Therefore, the sheet-like thermosetting adhesive needs to have a low flow start temperature and low viscosity.
- the heat resistance temperature of the organic EL element is about 110 ° C, and the heat treatment at a temperature exceeding this temperature causes deterioration of the characteristics of the organic EL element.
- the sheet-like thermosetting adhesive needs to have sufficient fluidity for coating under an environment of 110 ° C. or less. It is preferable to keep the temperature below 110 ° C
- fillers such as a filler having high heat conductivity, a filler having gas adsorption properties, and a filler having a moisture absorbing property are dispersed in the adhesive layer 9.
- the heat dissipation of the organic EL element 1 and the noria to oxygen, moisture, and the like of the organic EL element 1 can be further increased according to the type of the filler.
- the adhesive layer 9 is preferably as thin as possible in order to suppress the invasion of oxygen and moisture from the horizontal direction, but it is not necessary to set the thickness of the adhesive layer 9 to, for example, 20 m or less. Have difficulty. In such a case, the particle size of the filler is limited by the thickness of the adhesive layer 9, and the average particle size of the filler is preferably smaller than the thickness of the adhesive layer 9. Further, when the filler is mixed into the sheet-like thermosetting adhesive, the thickness of the sheet-like thermosetting adhesive (adhesive layer 9) is not more than half, that is, in view of quality control of sheet molding, that is, It is preferable that the thickness be 10 ⁇ m or less.
- the heat radiating plate 10 has a function of quickly radiating the heat generated from the element unit 6 by being fixed to the surface of the film formed in close contact with the element unit 6.
- heat sink 10 Has a function as a sealing material for suppressing intrusion of oxygen, moisture and the like into the inside of the element, and also has a function of reinforcing the gas noria property of the sealing film.
- the area of the heat sink 10 be larger than the area of the element portion 6.
- a glass plate, a metal or alloy plate having high thermal conductivity such as aluminum, copper, stainless steel, aluminum nitride, and copper tungsten is used.
- the heat radiating plate 10 does not have to have a plate shape.
- the heat radiating plate 10 may have a sheet shape such as a plastic sheet having gas barrier properties.
- the heat radiating plate 10 is not limited to a sheet shape, and may have any shape.
- the heat radiating plate 10 When the adhesive layer 9 is a photo-curable adhesive layer, the heat radiating plate 10 is adhered to the surface after applying a photo-curable resin on the shield layer 8 or the like. It is fixed on the adhesive layer 9 by irradiating light. That is, since the light curable adhesive layer is cured by the light transmitted through the heat radiating plate 10, the heat radiating plate 10 transmits the light used when curing a glass substrate, a plastic sheet having gas noria, or the like. It is preferable to use a material having properties.
- the radiator plate 10 When the adhesive layer 9 is a thermosetting adhesive layer, the radiator plate 10 is adhered to the surface after applying a thermosetting resin or the like on the shield layer 8 and heated in this state. Is fixed on the adhesive layer 9. For this reason, when the adhesive layer 9 is a thermosetting adhesive layer, the material of the heat sink 10 can be selected from a wider range than when the adhesive layer 9 is a light-curable adhesive layer. Metals and alloys having high heat conductivity, such as aluminum, copper, stainless steel, aluminum nitride, and copper tungsten, and light-transmitting materials such as plastic sheets having gaseous properties can be used.
- the gas barrier property in the thickness direction of the element portion 6 is a force secured by the heat radiating plate 10.
- the viewpoint force for reliably preventing oxygen and hydrogen from entering the organic EL element 1 is based on the element portion 6. It is also important to increase the gas noria in the direction parallel to the plate surface. Therefore, the element portion 6 is located inside the heat sink 10 when viewed from a plane, and the distance between the outer end of the heat sink 10 and the outer end of the shield layer 8 in the direction parallel to the substrate surface, or the adhesive layer It is preferable that one of the shorter distances in the direction parallel to the substrate surface between the outer peripheral end of the shield layer 9 and the outer peripheral end of the shield layer 8 is at least lmm. For example, in FIG.
- the distance B between the end and the outer peripheral end of the shield layer 8 is 1 mm or more.
- the flat layer 7, the sinored layer 8, the adhesive layer 9, and the like are sufficiently present in the direction parallel to the substrate surface of the element portion 6, so that moisture, oxygen, and the like hardly reach the organic layer 4.
- deterioration of the element section 6 such as the organic layer 4 is more reliably suppressed.
- Such an organic EL element 1 is manufactured, for example, as described below.
- an element section 6 having an anode 3, an organic layer 4, and a cathode 5 is formed on a substrate 2 according to an ordinary method.
- a film of an organic insulating material is formed by, for example, a vapor phase method to cover the surface of the element section 6 and form a planarization layer 7.
- a shield layer 8 is formed so as to cover the flat layer 7.
- a resin material forming the adhesive layer 9 is applied so as to cover the shield layer 8, and the heat sink 10 is brought into close contact with the resin material forming the adhesive layer 9.
- curing is performed by an appropriate method to form the adhesive layer 9, and the heat sink 10 is fixed on the adhesive layer 9.
- the organic EL device 1 shown in FIG. 1 is obtained.
- the organic EL element 1 can be used as a lighting device such as decorative lighting by setting the light emitting area of the element section 6 to a large area of, for example, 100 mm 2 or more. Further, the organic EL element 1 can be formed as an organic EL display by disposing a plurality of element parts 6 between the substrate 2 and the heat sink 10.
- the device portion 6 is sealed with the thin films of the flattening layer 7 and the shield layer 8, and the heat sink 10 is mounted on the sealing film.
- intrusion of oxygen, moisture, and the like into the element inside the element can be reliably blocked, and deterioration of the element section 6 can be suppressed.
- the sealing film of the flat layer 7 and the shield layer 8 is formed on the element section 6 and the heat sink 10 is attached, no inert gas or the like having low thermal conductivity is interposed. Heat dissipation is possible.
- a heat sink 10 is attached to the organic EL element 1 for the purpose of achieving both a gas barrier property for shutting off oxygen, moisture and the like and a heat dissipation property.
- the shield layer 8 for the heat dissipation of the organic EL element 1, While securing the gas barrier property against oxygen and the like, it is possible to suppress the deterioration of the element section 6 such as the organic layer 4 when the heat sink 10 is bonded.
- the flat layer 7 under the shield layer 8 the film quality of the shield layer 8 is improved, and the effect of the shield layer 8 is maximized.
- the film sealing and heat dissipation can be improved by optimizing the configuration of each of the separated layers.
- the element portion 6 is also protected from adverse effects when the heat sink 10 is fixed, and the deterioration of the element portion 6 including the organic layer 4 can be suppressed.
- the organic EL element 1 of the present invention since the plurality of films and the heat radiating plate 10 are sealed in close contact with the element section 6, an effect of reducing the thickness of the organic EL element 1 is also expected. it can. Further, since the flat layer 7 and the shield layer 8 can be formed by a normal thin film process, a large number of element portions 6 can be sealed at a time, and the process of bonding the heat sink 10 is extremely simple. . Therefore, compared to an organic EL element having a structure sealed with a conventional sealing can, the workability and productivity are excellent, and the organic EL element 1 can be manufactured at a low manufacturing cost.
- the organic EL element 1 of the present invention is not limited to the structure shown in Fig. 1 as described above, and as shown in Fig. 2, the substrate 2 and the heat sink 10 A structure in which a spacer layer 11 for regulating the interval may be provided. If a force is applied to the surface of the heat sink 10, the heat sink 10 may come into contact with the element part 6 and damage the element part 6, but by providing the spacer layer 11, the substrate 2 and the heat sink 10 The distance between the device and the device section 6 can be kept constant, and damage to the element section 6 can be reduced.
- the spacer layer 11 preferably has a height of, for example, 50 m or less.
- the spacer layer 11 is made of, for example, the same resin as the resin of the adhesive layer 9. Further, the spacer layer 11 may contain a minute spherical glass spacer or the like.
- the spacer layer 11 is formed, for example, as follows. First, a resin material constituting the adhesive layer 9 is applied so as to cover the shield layer 8, and then a resin layer constituting the spacer layer 11 on the substrate 2 is provided so as to surround the outside of the resin material. The material is applied linearly, and a heat sink 10 is brought into close contact with the resin material forming the adhesive layer 9 and the resin material forming the spacer layer 11, and The adhesive layer 9 and the spacer 11 are cured by an appropriate method in this state.
- a glass plate (thickness: 0.7 mm) was attached as a heat sink, and the resin was cured to produce an organic EL device.
- the UV-curable epoxy resin was cured by using a metal halide lamp and irradiating UV light having a wavelength of 365 nm included in this lamp to 6000 mJ Zcm 2 , and after-curing at a temperature of 80 ° C. It took one hour.
- the device size (light emitting area) was Imm vertical x 1.5 mm horizontal.
- An organic EL device as a comparative example was manufactured in the same manner except that SiO (6000A) was formed as a shield layer by a sputtering method.
- thermosetting acrylic resin was applied, and then a glass plate (thickness 0.7 mm) was attached as a heat sink, and cured at a temperature of 90 ° C. for 1 hour to produce an organic EL device.
- the device size (light emission area) was Imm vertically ⁇ 1.5mm horizontally.
- the outer peripheral edge of the shield layer is located at least 1 mm inside the outer peripheral edge of the heat sink when viewed from above.
- an organic EL device having the same structure except that no shield layer was formed was manufactured.
- FIG. 4 shows a photograph when the shield layer (A1) is formed
- Fig. 5 shows a photograph when the shield layer is not formed.
- UV curable epoxy is Metaruno ⁇ using halide lamp, performed by irradiating UV light having a wavelength of 365nm included in the lamp so that 6000MiZcm 2, also temperature Afutaki Your 80 ° C Performed in 1 hour.
- the device size (light-emitting area) is Imm x 1.5mm x 7mm.
- the organic EL device manufactured in this experiment had a positional relationship such that the outer peripheral edge of the heat sink and the outer peripheral edge of the shield layer matched when viewed in plane force.
- the outer peripheral edge was located at a position of 0.5 mm inside each of the outer peripheral edges of the shield layer and the flat layer.
- the positional relationship of the outer peripheral end of each layer viewed from the plane force is as follows: The order is a shield layer, a planarization layer, and an organic layer.
- an organic EL device in which the outer peripheral end of the shield layer was located at least lmm inside from the outer peripheral end of the heat sink when viewed from a plane was manufactured, and the same examination as described above was performed.
- this organic EL device the enlargement of the dark area as shown in Fig. 7 was not observed even after the acceleration test, and it was confirmed that the state before the acceleration test was almost maintained (not shown).
- UV curable epoxy resin was applied, a glass plate (0.7 mm in thickness) was attached as a heat sink, and the resin was cured to produce an organic EL device.
- the curing of UV hardening epoxy uses a Metaruno ⁇ halide lamp, performed by irradiating such that 6000MjZcm 2 with UV light having a wavelength of 365nm included in the lamp, also the after-curing temperature 80 ° C, performed in 1 hour.
- the device size (luminous area) was 20 mm long by 30 mm wide.
- the rise in the temperature of the radiator plate due to the heat generated in the organic EL element is referred to as the radiation temperature.
- the surface of the radiator plate was painted black with a black body spray for measurement with a meter.
- an organic EL device sealed with a sealing can was produced. First, an organic layer and a cathode were formed on a glass substrate with ITO in the same manner as described above. Next, this element was sealed in a nitrogen gas atmosphere (oxygen and water content: 10 PPM or less) using a sealing can (glass cap).
- the void inside the sealed can is filled with nitrogen gas having low thermal conductivity.
- curing is conducted by irradiation so as to 6000MjZcm 2 wavelengths 365nm UV light, also the after-curing temperature 80 ° C, 1 hour Performed at The surface of the sealing can was painted black with a black body spray to measure the temperature rise of the sealing can due to the heat generated in the organic EL element with a radiation thermometer.
- the temperature was measured with the temperature rise of the heat sink or the sealing can of the organic EL device produced as described above. For the temperature measurement, after changing the current value, the temperature was stabilized for 5 minutes and the force was applied. As shown in Fig. 8, when a heat sink is used to seal the organic EL element, heat generated in the element part is efficiently transmitted to the heat sink and dissipated into the air. It has been proved that the surface temperature of the plate is unlikely to rise. At this time, it is considered that the temperature of the element portion is substantially the same as the temperature of the heat sink, or the temperature of the element portion is slightly higher.
- FIG. 9 (a) shows the noria of the organic EL element using the UV curable adhesive
- FIG. 9 (b) shows the organic EL element using the sheet-like thermosetting adhesive. It shows barrier properties. The barrier properties were evaluated by comparing the initial state and the light emission state after 100 hours and 192 hours. As a result, when the sheet-like thermosetting adhesive was used, it hardly deteriorated even after 192 hours, whereas when the UV-curable adhesive was used, it deteriorated with time. Deterioration of characteristics (decrease in light emitting area) is observed.
- FIG. 10 shows the results.
- FIG. 10 ( a ) shows the case where the organic EL element was heat-treated at 110 ° C.
- FIG. 10 (b) shows the case where the organic EL element was heat-treated at 120 ° C.
- the curing temperature is preferably set to 110 ° C. or lower.
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- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
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Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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JP2006514576A JP4905783B2 (ja) | 2004-06-11 | 2005-06-10 | 有機半導体素子 |
US11/628,863 US8072138B2 (en) | 2004-06-11 | 2005-06-10 | Organic semiconductor element with shield layer |
KR1020067023322A KR101141659B1 (ko) | 2004-06-11 | 2005-06-10 | 유기 반도체 소자 및 그 제조방법 |
Applications Claiming Priority (2)
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JP2004174854 | 2004-06-11 | ||
JP2004-174854 | 2004-06-11 |
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WO2005122644A1 true WO2005122644A1 (ja) | 2005-12-22 |
Family
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PCT/JP2005/010656 WO2005122644A1 (ja) | 2004-06-11 | 2005-06-10 | 有機半導体素子 |
Country Status (6)
Country | Link |
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US (1) | US8072138B2 (ja) |
JP (1) | JP4905783B2 (ja) |
KR (1) | KR101141659B1 (ja) |
CN (1) | CN100559908C (ja) |
TW (1) | TWI383527B (ja) |
WO (1) | WO2005122644A1 (ja) |
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Also Published As
Publication number | Publication date |
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KR101141659B1 (ko) | 2012-05-04 |
KR20070030194A (ko) | 2007-03-15 |
JPWO2005122644A1 (ja) | 2008-04-10 |
TW200605421A (en) | 2006-02-01 |
TWI383527B (zh) | 2013-01-21 |
JP4905783B2 (ja) | 2012-03-28 |
US20080050585A1 (en) | 2008-02-28 |
CN100559908C (zh) | 2009-11-11 |
US8072138B2 (en) | 2011-12-06 |
CN1973579A (zh) | 2007-05-30 |
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