WO2005101972A2 - Integral separator for electrolytic capacitors - Google Patents
Integral separator for electrolytic capacitors Download PDFInfo
- Publication number
- WO2005101972A2 WO2005101972A2 PCT/IL2005/000412 IL2005000412W WO2005101972A2 WO 2005101972 A2 WO2005101972 A2 WO 2005101972A2 IL 2005000412 W IL2005000412 W IL 2005000412W WO 2005101972 A2 WO2005101972 A2 WO 2005101972A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- valve metal
- cathode
- metal oxide
- anode
- layer
- Prior art date
Links
- 239000003990 capacitor Substances 0.000 title claims abstract description 42
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 41
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 41
- 238000000034 method Methods 0.000 claims abstract description 30
- 229910052751 metal Inorganic materials 0.000 claims abstract description 29
- 239000002184 metal Substances 0.000 claims abstract description 29
- 239000003792 electrolyte Substances 0.000 claims abstract description 20
- 238000007740 vapor deposition Methods 0.000 claims abstract description 18
- 230000008569 process Effects 0.000 claims abstract description 14
- 238000004519 manufacturing process Methods 0.000 claims abstract description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000001301 oxygen Substances 0.000 claims abstract description 5
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 38
- 229910052782 aluminium Inorganic materials 0.000 claims description 20
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 19
- 239000000203 mixture Substances 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 12
- 230000008021 deposition Effects 0.000 claims description 7
- 238000013022 venting Methods 0.000 claims description 4
- 239000011888 foil Substances 0.000 description 32
- 238000000576 coating method Methods 0.000 description 27
- 239000011248 coating agent Substances 0.000 description 23
- 238000000151 deposition Methods 0.000 description 8
- 230000008901 benefit Effects 0.000 description 6
- 238000001771 vacuum deposition Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 230000035699 permeability Effects 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 239000000523 sample Substances 0.000 description 3
- FLDCSPABIQBYKP-UHFFFAOYSA-N 5-chloro-1,2-dimethylbenzimidazole Chemical compound ClC1=CC=C2N(C)C(C)=NC2=C1 FLDCSPABIQBYKP-UHFFFAOYSA-N 0.000 description 2
- 239000001741 Ammonium adipate Substances 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- -1 aluminum salts Chemical class 0.000 description 2
- 235000019293 ammonium adipate Nutrition 0.000 description 2
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 2
- 239000004327 boric acid Substances 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 150000001768 cations Chemical class 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 230000003292 diminished effect Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- BNGXYYYYKUGPPF-UHFFFAOYSA-M (3-methylphenyl)methyl-triphenylphosphanium;chloride Chemical group [Cl-].CC1=CC=CC(C[P+](C=2C=CC=CC=2)(C=2C=CC=CC=2)C=2C=CC=CC=2)=C1 BNGXYYYYKUGPPF-UHFFFAOYSA-M 0.000 description 1
- ZSLUVFAKFWKJRC-IGMARMGPSA-N 232Th Chemical compound [232Th] ZSLUVFAKFWKJRC-IGMARMGPSA-N 0.000 description 1
- 239000004254 Ammonium phosphate Substances 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- RGHNJXZEOKUKBD-SQOUGZDYSA-N D-gluconic acid Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C(O)=O RGHNJXZEOKUKBD-SQOUGZDYSA-N 0.000 description 1
- RGHNJXZEOKUKBD-UHFFFAOYSA-N D-gluconic acid Natural products OCC(O)C(O)C(O)C(O)C(O)=O RGHNJXZEOKUKBD-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 229910052776 Thorium Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000001464 adherent effect Effects 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical class [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- 229910000148 ammonium phosphate Inorganic materials 0.000 description 1
- 235000019289 ammonium phosphates Nutrition 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 239000013068 control sample Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002939 deleterious effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- MNNHAPBLZZVQHP-UHFFFAOYSA-N diammonium hydrogen phosphate Chemical compound [NH4+].[NH4+].OP([O-])([O-])=O MNNHAPBLZZVQHP-UHFFFAOYSA-N 0.000 description 1
- 230000003467 diminishing effect Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- 229940093476 ethylene glycol Drugs 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 229950006191 gluconic acid Drugs 0.000 description 1
- 235000012208 gluconic acid Nutrition 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000012956 testing procedure Methods 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/0029—Processes of manufacture
- H01G9/0032—Processes of manufacture formation of the dielectric layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/02—Diaphragms; Separators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/042—Electrodes or formation of dielectric layers thereon characterised by the material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/07—Dielectric layers
Definitions
- the present invention relates to electrolytic capacitors and their manufacture.
- their structure contains as a rule a porous element, which, while separating the plates, simultaneously allows movement of current carriers therethrough.
- This element is consequently manufactured from an insulating substance, and it must be adequately stable, mechanically, thermally and chemically, when disposed within the electrolyte medium. Also, it must not pollute this medium and must not significantly increase the equivalent series (electrical) resistance (ESR) of the capacitor.
- ESR equivalent series resistance
- Conventionally, special kinds of papers or coatings are used in a form of thin and very thin layers, in order to provide reliable electrical properties within a wide range of temperatures.
- Typical thickness of paper separators lies within the range of 25-200 microns, depending on nominal working voltages, while a cloth separator is characterized by a thickness of 110-120 microns and minimum thickness of 40 ⁇ m.
- Typical thicknesses of paper separators are about 50-60 microns for low-voltage capacitors and 160-200 microns for high voltage capacitors.
- the dimensionless coefficient of paper separators' permeability ⁇ is about 25-30, and near 10 for cloth-type separators.
- Extremely thin types of paper separators are about 12-13 microns in thickness. The contribution of conventional separator thickness may be large, e.g. up to 40% of a capacitor's volume.
- chromium oxide, boric acid and titanium oxide was proposed, to obtain a continuous film of desirable thickness on the electrode surface.
- another way of manufacturing a separator layer was proposed on the basis of insulating powder (alumina or silica), attachment to the electrode surface being by application of a fusible body, e.g. of ammonium perborate.
- a fusible body e.g. of ammonium perborate.
- vacuum deposition of silicon dioxide (or silicates) has been proposed for obtaining a separator coating of desirable properties.
- An alternative method of pyrolysis of metal salts with a porous refractory oxide to form a separator layer was disclosed in GB Patent No. 1092741.
- the central idea of this method was thermal decomposition of aluminum nitrate with subsequent deposition of alumina on colloidal silica dust, sintered in turn in order to create a strong bond to the electrode surface during annealing of an electrode foil.
- the thickness of the separator film is recommended to be more than 10 ⁇ m in order to avoid short circuits between electrodes. It was noted, however, that this coating gave rise to considerable losses of specific capacitance up to 40-50% of the initial value. It may be assumed also, that high losses of specific capacitance are accompanied by corresponding growth of ESR values.
- the prior methods such as those enumerated above, suffer from similar disadvantages of capacitance decrease, poor adhesion and low porosity and permeability of these coatings.
- an electrolytic capacitor which includes an anode with an insulating film on its surface, a cathode, an electrolyte in contact with anode and cathode surfaces, and as an integral anode- cathode separator, at least one valve metal oxide layer integral with at least one surface of at least one electrode selected from the anode and the cathode, the average thickness of the integral valve metal oxide separator layer on either or each of the anode or cathode being less than 10 microns.
- the capacitor may be characterized by absence of any non-integral anode-cathode separator.
- the anode and the cathode may each (independently) consist essentially of valve metal and the insulating film may consist essentially of valve metal oxide.
- the presently preferred valve metal and valve metal oxide are aluminum and alumina, respectively.
- the integral valve metal oxide separator layer is present on the cathode only.
- the cathode comprises at least one layer of a mixture of valve metal and valve metal oxide deposited thereon prior to deposition of the integral valve metal oxide separator layer.
- the invention provides a process for the manufacture of the electrolytic capacitor of the invention, which includes the step of subjecting at least one electrode, selected from the anode and the cathode, to vapor deposition of valve metal in presence of oxygen, under conditions such that valve metal oxide is deposited on at least one surface of the at least one electrode, until a predetermined thickness of less than 10 microns valve oxide layer, is obtained.
- the cathode is subjected to vapor deposition of at least one layer of a mixture of valve metal and valve metal oxide thereon, prior to vapor deposition of valve metal oxide having the above- defined predetermined thickness.
- the invention provides a cathode for use in the electrolytic capacitor of the invention, which comprises a substantially planar substrate (e.g. a valve metal foil such as Al foil), a first layer consisting essentially of a mixture of valve metal and valve metal oxide deposited on at least one side of the planar substrate, and a further layer consisting of valve metal oxide less than 10 microns thick, deposited on the first layer.
- a substantially planar substrate e.g. a valve metal foil such as Al foil
- a first layer consisting essentially of a mixture of valve metal and valve metal oxide deposited on at least one side of the planar substrate
- a further layer consisting of valve metal oxide less than 10 microns thick
- the inventive cathode may be made by subjecting the substrate to vapor deposition of least one layer of a mixture of valve metal and valve metal oxide thereon, and then to vapor deposition of valve metal oxide having the above-defined predetermined thickness. Preferably the two vapor deposition steps are carried out consecutively in the same apparatus, without intermediate venting.
- the electrolytes used in the inventive capacitors may be solid or liquid, and may be organic or inorganic. Reference may be made to our prior US Patent No. 6,287,673 entitled "Method for producing high surface area foil electrodes", for exemplary details relating to the deposition of a mixture of valve metal and valve metal oxide on a substrate. The entire contents of US Patent No. 6,287,673 are incorporated herein by reference.
- Figure 1 is a sectional view of an electrode with integral separator in accordance with an embodiment of the present invention.
- the present invention provides in one aspect, an improved design for valve metal electrolytic capacitors.
- Such capacitors include an anode plate with an insulating film on its surface, a cathode plate, and an electrolyte in contact with the anode and cathode surfaces.
- the capacitor of the present invention is characterized additionally, by the presence of a porous valve metal oxide coating on at least one external surface of an electrode, preferably on the cathode plate.
- an improvement in a method for manufacturing capacitors including an electrolyte in contact with an anode foil having an insulating valve metal oxide coating, preferably an aluminum oxide layer on at least one surface thereof and a cathode foil, which comprises the step of vacuum deposition of a porous valve metal (e.g. aluminum) oxide coating on at least one surface of the cathode.
- a porous valve metal e.g. aluminum
- the method may be carried out by a deposition rate in the range of about 120-620 A per second, preferably 400-500 A/sec and a pure oxygen atmosphere with the pressure in the range of about 1-2 mTorr, preferably 1.0-1.4 mTorr, or 0 2 /Ar gas mixture with oxygen partial pressure near 1 mTorr and argon pressure 1.3-2.3 mTorr, preferably 1.7-2 mTorr and with substrate temperature in the range of about 200-350°C, preferably 250-300°C.
- One advantage of the invention is reduced total thickness (diameter) and weight of the product capacitors, which include an anode foil with a dielectric layer, a separator body and a cathode foil, in comparison with conventional capacitors.
- Another advantage of the invention is a reduced value of ESR, achieved due to a thinner separator body.
- Still another advantage of the invention is improved purity of electrolyte composition, in particular a diminished quantity of chlorine ions in comparison with standard capacitors.
- Yet another advantage of the invention is excellent mechanical strength, flexibility and hardness of the produced separator layer.
- Another advantage is improved thermo-conductivity of a wound capacitor's _ _
- valve metal is a metal which, when oxidized, allows current to pass if used as a cathode but opposes the flow of current when used as an anode.
- valve metals include magnesium, thorium, cadmium, tungsten, tin, iron, silver, silicon, tantalum, titanium, aluminum, zirconium and niobium.
- the integral separator may be applied for coating capacitor cathode (and anode) foils of different origin and for coating both foils simultaneously.
- This unavoidable treatment of anode foils could in principle change the structure of an alumina separator (if deposited on the anode) and therefore cause undesirable changes in its properties.
- alumina separator deposition subsequent to such treatment it would unfortunately complicate the technology of manufacturing anode foils.
- Both above versions of the alumina coating were obtained by vacuum evaporation of pure aluminum in a reactive atmosphere of pure oxygen, or a gas mixture containing oxygen, with the purpose of totally oxidizing deposited aluminum in the course of the deposition process.
- the foil substrate band of 32/64 microns thickness was either fixed, or moving with uniform velocity, in a source of vaporized aluminum.
- the rate of aluminum condensation (evaporation), total gas pressure in the vacuum chamber and the foil velocity (when a moving foil was used), were applied to provide a thickness of alumina coating in the range of 0.3-7 ⁇ m, as well as deposited alumina as a porous layer structure.
- An embodiment of the invention is illustrated in Fig. 1.
- the electrode with integral separator comprises an aluminum foil 1 , on both sides of which are consequently applied a layer 2 consisting of aluminum and alumina, and a layer 3 consisting of alumina.
- the thickness of each of layers 2 and 3 is preferably less than 10 microns. It has been found in accordance with an embodiment of the present invention, that the primary (preliminary) vapor deposited sub-layer structure exerts a strong influence on the properties of the subsequently deposited alumina separator layer. In particular, the porosity of this outer alumina separator layer has been found to depend on irregularities of the inner sub-layer.
- the volume specific capacitance for samples is near 178 ⁇ F/ ⁇ m/cm 2 , compared with 225 ⁇ F/ ⁇ m/cm 2 in absence of the alumina layer (control sample); moreover this proportion is approximately maintained after electrochemical treatment (so-called passivating) of both samples (see Exs.1- 4).
- De-ionized water 51%, Ethylene-glycol 34%, Ammonium adipate 13%, Ammonium phosphate 1 %, D-gluconic acid 1 %.
- the electrolyte composition E-ll used for post-deposition samples' treatment has the following components: De-ionized water 1000 ml, Boric acid 30 g/l, Ammonium adipate 30 g/l, Ammonium 2-hydrophosphate 1.5 g/l, Ammonium 5-borate 0.5 g/l.
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Electric Double-Layer Capacitors Or The Like (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007509057A JP4739326B2 (ja) | 2004-04-25 | 2005-04-20 | 電解コンデンサ用の一体型セパレータ |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IL16160604A IL161606A0 (en) | 2004-04-25 | 2004-04-25 | Integral separator for electrolytic capacitors |
IL161606 | 2004-04-25 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2005101972A2 true WO2005101972A2 (en) | 2005-11-03 |
WO2005101972A3 WO2005101972A3 (en) | 2006-02-02 |
Family
ID=34074032
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/IL2005/000412 WO2005101972A2 (en) | 2004-04-25 | 2005-04-20 | Integral separator for electrolytic capacitors |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP4739326B2 (ja) |
IL (1) | IL161606A0 (ja) |
WO (1) | WO2005101972A2 (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007208254A (ja) * | 2006-01-12 | 2007-08-16 | Acktar Ltd | 電極、膜、印刷版原版及び多層多孔質皮膜を含む他の物品、及びそれらの製造方法 |
EP1857573A1 (en) * | 2005-01-07 | 2007-11-21 | Daiso Co., Ltd. | Insoluble electrode |
JP2008270525A (ja) * | 2007-04-20 | 2008-11-06 | Fujitsu Ltd | 電解コンデンサ |
JP2008270524A (ja) * | 2007-04-20 | 2008-11-06 | Fujitsu Ltd | 電極箔及びその製造方法 |
WO2008132829A1 (ja) * | 2007-04-20 | 2008-11-06 | Fujitsu Limited | 電極箔及びその製造方法,並びに電解コンデンサ |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5181401B1 (ja) * | 2012-07-12 | 2013-04-10 | 日本蓄電器工業株式会社 | アルミニウム電解コンデンサ用陰極箔 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6287673B1 (en) * | 1998-03-03 | 2001-09-11 | Acktar Ltd. | Method for producing high surface area foil electrodes |
DE10104573C1 (de) * | 2001-02-01 | 2002-07-18 | Epcos Ag | Betriebselektrolyt für einen Aluminium-Elektrolyt-Kondensator, Kondensator mit dem Betriebselektrolyten und Verwendung des Kondensators |
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JPH01298713A (ja) * | 1988-05-27 | 1989-12-01 | Elna Co Ltd | 電解コンデンサ用陰極箔の製造方法 |
FR2688092B1 (fr) * | 1992-02-14 | 1994-04-15 | Traitement Metaux Alliages Sa | Feuille pour electrode de condensateur electrolytique et procede de fabrication. |
JP2000277386A (ja) * | 1999-03-23 | 2000-10-06 | Toyota Motor Corp | 電気二重層キャパシタセパレータおよびその製造方法 |
JP2003297692A (ja) * | 2002-03-29 | 2003-10-17 | Nippon Chemicon Corp | 固体電解コンデンサ |
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2004
- 2004-04-25 IL IL16160604A patent/IL161606A0/xx unknown
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2005
- 2005-04-20 JP JP2007509057A patent/JP4739326B2/ja not_active Expired - Fee Related
- 2005-04-20 WO PCT/IL2005/000412 patent/WO2005101972A2/en active Application Filing
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US6287673B1 (en) * | 1998-03-03 | 2001-09-11 | Acktar Ltd. | Method for producing high surface area foil electrodes |
DE10104573C1 (de) * | 2001-02-01 | 2002-07-18 | Epcos Ag | Betriebselektrolyt für einen Aluminium-Elektrolyt-Kondensator, Kondensator mit dem Betriebselektrolyten und Verwendung des Kondensators |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
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EP1857573A1 (en) * | 2005-01-07 | 2007-11-21 | Daiso Co., Ltd. | Insoluble electrode |
EP1857573A4 (en) * | 2005-01-07 | 2010-07-07 | Daiso Co Ltd | NON-SOLUBLE ELECTRODE |
JP2007208254A (ja) * | 2006-01-12 | 2007-08-16 | Acktar Ltd | 電極、膜、印刷版原版及び多層多孔質皮膜を含む他の物品、及びそれらの製造方法 |
JP2008270525A (ja) * | 2007-04-20 | 2008-11-06 | Fujitsu Ltd | 電解コンデンサ |
JP2008270524A (ja) * | 2007-04-20 | 2008-11-06 | Fujitsu Ltd | 電極箔及びその製造方法 |
WO2008132829A1 (ja) * | 2007-04-20 | 2008-11-06 | Fujitsu Limited | 電極箔及びその製造方法,並びに電解コンデンサ |
US8213159B2 (en) | 2007-04-20 | 2012-07-03 | Fujitsu Limited | Electrode foil, method of manufacturing electrode foil, and electrolytic capacitor |
Also Published As
Publication number | Publication date |
---|---|
IL161606A0 (en) | 2004-09-27 |
JP2007535145A (ja) | 2007-11-29 |
WO2005101972A3 (en) | 2006-02-02 |
JP4739326B2 (ja) | 2011-08-03 |
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