WO2005069346A1 - 写像型電子顕微鏡、電子顕微鏡、試料面観察方法及びマイクロデバイスの製造方法 - Google Patents
写像型電子顕微鏡、電子顕微鏡、試料面観察方法及びマイクロデバイスの製造方法 Download PDFInfo
- Publication number
- WO2005069346A1 WO2005069346A1 PCT/JP2005/000625 JP2005000625W WO2005069346A1 WO 2005069346 A1 WO2005069346 A1 WO 2005069346A1 JP 2005000625 W JP2005000625 W JP 2005000625W WO 2005069346 A1 WO2005069346 A1 WO 2005069346A1
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- WIPO (PCT)
- Prior art keywords
- electron
- optical system
- electron beam
- sample surface
- illumination
- Prior art date
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/045—Beam blanking or chopping, i.e. arrangements for momentarily interrupting exposure to the discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/153—Electron-optical or ion-optical arrangements for the correction of image defects, e.g. stigmators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/29—Reflection microscopes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/153—Correcting image defects, e.g. stigmators
- H01J2237/1538—Space charge (Boersch) effect compensation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/245—Detection characterised by the variable being measured
- H01J2237/24592—Inspection and quality control of devices
Definitions
- the present invention provides a mapping electron microscope, an electron microscope, a method for observing a sample surface, an electron microscope, a method for observing a sample surface, and a method for observing the sample surface using reflected electrons generated by irradiating the sample surface with a bright electron beam. Eating a microphone-mouth device using a microscope
- It relates to a manufacturing method.
- the mapping electron microscope uses an electron optical system to irradiate the sample surface with an electron beam, and the resulting secondary electrons and reflected electrons are connected to the detection surface of the detector using the electron optical system.
- the image is observed and the sample surface is observed two-dimensionally. Unlike SEM, the number of scans can be reduced, so that the sample observation time can be shortened, and is attracting attention as an inspection device for a microphone opening device such as a semiconductor.
- Figure 5 shows an example of such a mapping electron microscope.
- the irradiation beam 24 emitted from the force source 21 passes through the penetrating electrode 34, the first anode 35, the second anode 36, the electron optics system 22 for illumination, and the electromagnetic prism 23 Incident on.
- the irradiation beam 24 passes through the force source lens 27 after its optical path is changed by the electromagnetic prism 23, and illuminates the sample 26 with the surface.
- the imaging electron optics system consists of an imaging optics system 29, an electromagnetic prism 23, and a power sword lens 27.
- the illumination electron optics system includes an illumination-only electron optics system 22, a power sword lens. 27, Electromagnetic prism 23
- the optical path of the electron beam incident on the sample 26 and the optical path of the electron beam emitted from the sample 26 are controlled by the electromagnetic prism 23 (EXB). Is carved. Therefore, in the optical path between the sample 26 and the electromagnetic prism 23, a Coulomb effect occurs between the electrons in the illumination electron beam and the electrons generated from the sample and used for observation. There is a problem that an image to be formed is blurred.
- the electromagnetic prism 23 generates a large astigmatism. It is very difficult to adjust both the illumination electron optical system and the imaging electron optical system to correct this aberration. Therefore, in the past, design and adjustment were performed from the viewpoint of the imaging electron optical system, and adjustment of the illumination electron optical system was often insufficient.
- the illumination electron optical system and the imaging electron optical system were designed completely separately, and required as many electron beam optical members. Disclosure of the invention
- the present invention has been made in view of such circumstances, and is a mapping electron microscope using a reflected electron as an observation electron beam.
- the object of the present invention is to provide a mapping electron microscope and an electron microscope that are less affected by fruits, and to provide an electron microscope that uses a smaller number of electron optical members.
- Such a mapping electron microscope and an electron microscope An object of the present invention is to provide a method for observing a sample surface using the method and a method for manufacturing a micro device.
- an irradiation electron beam emitted from an electron source is incident on a sample surface via an illumination electron optical system, and electrons emitted from the sample surface are observed with an observation electron beam.
- a mapping electron microscope that forms an image on a detection unit via an imaging electron optical system, comprising: an optical path switching unit that switches a direction of the irradiation electron beam or the observation electron beam;
- the optical path switching means is configured so that, at a predetermined timing, the irradiation electron beam is incident on the sample surface, and the observation electron beam reaches the detection means at another predetermined timing.
- This is a mapping type electron microscope having a function of switching the direction of a line.
- an electron beam for irradiation irradiated on a sample surface via an electron optical system by an optical path switching means without using an electromagnetic prism is used without using an electromagnetic prism.
- the timing at which reflected electrons emitted from the sample surface and reaching the detection device via the electron optical system pass through the optical path switching means are different from the timing at which the reflected electrons pass through the optical path switching means.
- the optical path switching means a simple electron optical element such as a deflector can be used.
- a second invention for achieving the above object is the first invention, wherein the observation electron beam comprises a reflected electron having the same energy as the illumination electron beam, and the illumination electron optical system comprises: An illumination-only electron optical system provided between the electron source and the optical path switching means; and an electron optical system provided between the optical path switching means and the sample surface.
- An imaging-dedicated electron optical system provided between the detection means and the optical path switching means; and the electron optical system, wherein the electron optical system is a combination of the illumination electron optical system and the imaging electron optical system.
- the feature is that some of the functions are shared.
- the reflected electron having the same energy as the irradiation electron beam is used as the observation electron beam
- a part of the imaging electron optical system and the illumination electron optical system is used as a common optical system. If this is used, if the imaging electron optical system, which is the magnifying system, is designed to have a small margin, the illumination electron optical system, which is the shrinking system, will also be designed with high accuracy.
- the observation electron beam emitted in the direction in which the illumination electron beam is incident follows the path on which the illumination electron beam is incident, and reaches the optical path switching means.
- the illumination electron optics and imaging electron optics which were conventionally designed separately, can be replaced by common elements. As such, it can be provided between the optical path switching means and the sample surface.
- the above-mentioned electron optical system (common electron optical system) is provided with a function of changing the magnification of the imaging electron optical system, so that the magnification can be changed by changing the magnification of the imaging electron optical system or the field of view (aspect)
- the illumination electron optical system can be linked at the same time to enlarge and reduce the illumination field and change the illumination field shape (aspect ratio).
- the common use of the optical system makes it possible to keep the entire optical system smaller than before.
- a third invention for achieving the above object is the first invention, wherein the observation electron beam comprises a reflected electron having the same energy as the illumination electron beam, and the illumination electron optical system and the imaging electron optics, in that it consists of only the electron optical system provided between said optical path switching means and the sample surface in which the feature ⁇
- the illumination electron optical system and the imaging electron optical system are completely shared as an electron optical system provided between the optical path switching means and the sample surface. It can be further simplified.
- a fourth invention for achieving the above object is any one of the first invention to the third invention, wherein the optical path switching means comprises: an electron in the irradiation electron beam; And a function of guiding the irradiation electron beam to the sample surface for a time equal to or less than the time required to reach the sample surface.
- the light path switching means has a function of guiding the irradiation electron beam to the sample surface for a time shorter than the time required for electrons in the irradiation electron beam to reach the sample surface from the light path switching means. . Therefore, for example, if the time required for electrons in the irradiation electron beam to reach the sample surface from the optical path switching means is T, the irradiation electron beam is guided to the sample surface only during T, and the next T During this time, the reflected electrons emitted from the sample are guided to the detection means, and this is repeated alternately. The shorter the time for guiding the irradiation electron beam to the electron optical system is shorter than T, the smaller the effect of the quantum effect can be.
- a fifth invention for achieving the above object is any one of the first invention to the third invention, wherein the optical path switching means comprises: an electron in the irradiation electron beam; A function of guiding the irradiation electron beam to the sample surface for a time equal to or less than a time required for the electron beam to reciprocate between the point where the electron beam is most narrowed and the sample.
- the present invention also aims at the same operation and effect as the fourth invention, but further shortens the irradiation time of the electron beam, so that the point between the point where the electron beam is most narrowed down in the electron optical system and the sample is obtained.
- the electron beam is irradiated only for the time shorter than the round trip time.
- the Coulomb effect occurs most remarkably at the electron beam force in the electron optical system; By irradiating the sample with an electron beam for a time equal to or less than the time required to make a round trip to the sample, the effect of the quark effect can be reduced more effectively.
- an illumination electron beam emitted from an electron source is made incident on a sample surface via an illumination electron optical system, and electrons emitted from the sample surface are observed as an observation electron beam.
- An imaging electron microscope that forms an image on a detection unit via an imaging electron optical system, wherein the observation electron beam is composed of reflected electrons having the same energy as the illumination electron beam, and
- the optical system comprises: an illumination-dedicated electro-optical system provided between the electron source and the optical path switching unit; and an electron optical system provided between the optical path switching unit and the sample surface.
- the imaging electron optical system comprises: an imaging-dedicated electron optical system provided between the detection unit and the optical path switching unit; and the electron optical system.
- a seventh invention for achieving the above object has a step of inspecting a surface of a microdevice or an intermediate product thereof using the mapping electron microscope according to any one of the first invention to the sixth invention. This is a method for manufacturing a microdevice.
- the manufacturing cost can be reduced.
- An eighth invention for achieving the above object is an electron microscope, comprising: an electron source that causes an irradiation electron beam to enter a sample surface; and an electron emitted from the sample surface as an observation electron beam. And a light path switching means for causing the irradiation electron beam to enter the sample surface at a predetermined timing and causing the observation electron beam to reach the detector at another predetermined timing. It is an electron microscope characterized by having.
- the optical path switching means has a function of switching between the predetermined timing and the another predetermined timing depending on whether a voltage is applied to the optical path switching means.
- a tenth invention for achieving the above object is a method for observing a sample surface, which comprises irradiating an electron beam for illumination and causing the electron beam for irradiation to enter the sample surface at a predetermined timing.
- the observation electrons emitted from the sample surface are caused to reach a detector at a timing different from the predetermined timing, and the observation electrons are detected by the detector to form an image of the sample surface.
- FIG. 1 is a diagram showing an outline of an optical system of a mapping microscope according to a first embodiment of the present invention.
- FIG. 2 is a diagram showing an outline of an optical system of a mapping microscope according to a second embodiment of the present invention.
- FIG. 3 is a diagram showing an outline of an optical system of a mapping microscope according to a third embodiment of the present invention.
- FIG. 4 is a flowchart showing an example of the semiconductor device manufacturing method according to the embodiment of the present invention.
- FIG. 5 is a diagram showing an outline of an optical system of a mapping microscope that has been conventionally considered.
- FIG. 1 is a diagram showing an outline of an optical system of a mapping microscope according to a first embodiment of the present invention.
- the irradiation beam 4 emitted from the force source 1 is applied to the antenna electrodes 14, The light passes through the first anode 15, the second anode 16, and the illumination-dedicated electron optical system 2 and enters the deflector 3.
- the irradiation beam 4 passes through the common electron optical system 7 mainly composed of a force source lens after the optical path is changed by the deflector 3, and the sample 6 To illuminate the area.
- the irradiation beam 4 travels straight through the deflector 3 and is absorbed by the electron absorbing plate 17.
- the Coulomb effect generated between the electrons in the irradiation beam 4 and the generated electrons 8 can be reduced, and blurring of the imaging electron optical system can be reduced.
- the potential difference applied between the force source 1 and the sample stage 5 is ov or a value closer to 0 V (however, the potential V 1 of the force source 1 is the potential V 1 of the sample stage 5). Less than or almost equal to 2. That is, V 1 ⁇ V 2).
- the illumination beam 4 emitted from the force source 1 passes through the ⁇ ⁇ enert electrode 14, the first anode 15, the second anode 16, and the illumination-dedicated electron optical system 2 and enters the deflector 3.
- the irradiation beam 4 deflects its optical path by the deflector 3 and then passes through the common electron optical system 7 to illuminate the sample 6 on the surface.
- no voltage is applied to the deflector 3
- the irradiation beam 4 passes straight through the deflector 3 and is absorbed by the electron absorbing plate 17.
- the force source 1 and the sample stage 5 have the same potential, or a potential difference of several volts or less, when the irradiation beam 4 reaches the surface of the sample 6, the energy is 0 [eV]. Or (V2-VI) [eV].
- the sample 6 When the irradiation beam 4 is incident on the sample 6, the sample 6 generates reflected electrons 8 having a distribution according to the surface shape, material distribution, change in potential, and the like. Since the energy of the irradiation beam is low, almost no secondary electrons are generated.
- the reflected electrons 8 pass through the common electron optical system 7, and a voltage is applied to the deflector 3. If not, the image is projected onto the MCP (Micro Channel Plate) detector 10 through the imaging electron optical system 9, passes through the light mapping optical system 12, and is projected on the CCD camera 13. 5 is a sample stage.
- MCP Micro Channel Plate
- the energy of the irradiation beam 4 is almost 0 [eV] on the surface of the sample 6, the initial energy of the reflected electrons is also almost 0 [eV]. Therefore, the reflected electrons are accelerated by the common electron optical system 7. At this time, since the energy is almost the same as the irradiation beam 4, the reflected electrons emitted in the direction in which the irradiation beam 4 is incident 8 reverses the optical path on which the irradiation beam 4 is incident.
- the common electron optical system 7 is a zoom optical system, if the magnification of the common electron optical system 7 is increased to increase the magnification of the observation system, the illumination area of the illumination beam 4 will be narrowed at the same time. There is no need to adjust the illumination beam with a separate electron lens system.
- the-part of the optical system conventionally provided separately for the illumination-dedicated electron optical system 22 and the imaging-dedicated electron optical system 29 is now a function of the common electron optical system 7. Therefore, the number of electron optical members can be reduced, and even in such a case, since the deflector 3 is used for switching the optical path, the optical characteristics are not significantly affected.
- Electron optical members that cannot be shared are arranged in the illumination-dedicated electron optical system 2 and the imaging-dedicated electron optical system 9. For example, if there is a difference between the size of the field stop of the force source 1 or the illumination electron optical system and the size of the MCP detector: 1.0, a simple optical system that adjusts the magnification ratio is dedicated to illumination. It may be provided in the electron optical system 2. Since the ratio between the size of the field stop of the force source 1 or the illumination electron optical system and the size of the MCP detector 10 is fixed, an optical system for adjusting the magnification ratio is not required.
- the time for applying the voltage to the deflector 3 and deflecting the irradiation beam 4 toward the common electron optical system 7 should be equal to or less than the time T during which the electrons in the irradiation beam 4 reach the sample 6 from the deflector 3. Is desirable. In this way, the Coulomb effect generated between the electrons in the irradiation beam 4 and the reflected electrons 8 can be reduced, and the blur of the imaging electron optical system can be reduced. Furthermore, the time for applying the voltage to the deflector 3 is set to be equal to or less than the time for the electron beam to reciprocate between the position where the electron beam is most narrowed by the common electron optical system 7 (crossover position) and the sample 6. This makes it possible to more effectively suppress the occurrence of the Coulomb effect and reduce blurring of the imaging electron optical system.
- the deflection is performed by this method.
- the reflected electrons 8 can be prevented from passing through the deflector 3 when the deflector 3 is excited, and the generation of stray light as described above can be prevented.
- FIG. 2 is a diagram showing an outline of an optical system of a mapping microscope according to a second embodiment of the present invention.
- the same components as those in the figures already shown in this section are denoted by the same reference numerals, and the description thereof will be omitted.
- FIG. 2 differs from the embodiment shown in FIG. 1 in that the illumination-dedicated electron optical system 2 and the imaging-dedicated electron optical system 9 are completely omitted, and the rest is the same. Therefore, only the different parts will be described.
- the illumination-dedicated electron optical system 2 and the imaging-dedicated electron optical system 9 in FIG. 1 are completely shared, and are housed in a portion shown as a common electron optical system 11.
- the electron beam source (Caso 1), the first anode 15 and the second anode 16) crossover position and the sample 6 surface, and the detection surface of the MCP detector 10 and the sample 6 surface are common.
- the electron optical system 11 is conjugated. Therefore, the irradiation beam 4 from the electron beam source illuminates the surface of the sample 6 critically or with a Keller by the action of the common electron optical system 11, and the image of the sample 6 is By the action of 1, an image is formed on the detection surface of the MCP detector 10.
- FIG. 3 is a diagram showing an outline of an optical system of a mapping microscope according to a third embodiment of the present invention. This embodiment is different from the embodiment shown in FIG. 1 only in that a second deflector 3 ′ is provided and an electron absorbing plate 17 is provided after the second deflector. Only the differences will be described.
- the electron absorption by the electron absorbing plate 17 is insufficient, and the reflected electrons and the secondary electrons on the electron absorbing plate 17 are used exclusively for imaging. It is used when it enters the electron optical system 9 and becomes noise.
- the deflector 3 and the deflector 3 ' operate synchronously, and when a voltage is applied to the deflector 3, no voltage is applied to the deflector 3' and the deflector 3 ' A voltage is applied to the deflector 3 ′ when no voltage is applied. Therefore, when a voltage is applied to the deflector 3, the irradiation beam 4 travels straight through the deflector 3 ', is deflected by the deflector 3, and reaches the sample 6 surface. When a voltage is applied to the deflector 3, the irradiation beam 4 is deflected by the deflector 3 ′ and absorbed by the electron absorbing plate 17.
- the electron absorption plate 17 can be installed at a location remote from the imaging optical system 9, even if secondary electrons or reflected electrons are generated, the electron absorbing plate 17 is The possibility of noise is reduced.
- FIG. 4 is a flowchart illustrating an example of a method for manufacturing a semiconductor device according to an embodiment of the present invention.
- the manufacturing process of this example includes the following main processes.
- Wafer manufacturing process for manufacturing wafers or wafer preparation process for preparing wafers
- Chip assembling process to cut out chips formed on the wafer one by one and make them operable
- Chip inspection process for inspecting the resulting chips
- each step is further composed of several sub-steps.
- the main process that has a decisive effect on the performance of semiconductor devices is the wafer processing process.
- This wafer processing step includes the following steps.
- a thin film forming process for forming a dielectric thin film serving as an insulating layer, a metal thin film for forming a wiring portion, or an electrode portion using CVD sputtering or the like. -Oxidation process to oxidize substrate
- a lithography process that forms a resist pattern using a mask (reticle) to selectively process thin film layers and wafer substrates.
- the wafer processing process is repeated as many times as necessary to produce semiconductor devices that operate as designed.
- the inspection by the mapping electron microscope of the present invention is performed in the chip inspection step of inspecting the formed chip and the inspection step of inspecting the added wafer.
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- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/585,995 US7456401B2 (en) | 2004-01-14 | 2005-01-13 | Projection electron microscope, electron microscope, specimen surface observing method and micro device producing method |
EP05703855A EP1720194A1 (en) | 2004-01-14 | 2005-01-13 | Projection electron microscope, electron microscope, specimen surface observing method, and micro device producing method |
JP2005517117A JPWO2005069346A1 (ja) | 2004-01-14 | 2005-01-13 | 写像型電子顕微鏡、電子顕微鏡、試料面観察方法及びマイクロデバイスの製造方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004006422 | 2004-01-14 | ||
JP2004-006422 | 2004-01-14 |
Publications (1)
Publication Number | Publication Date |
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WO2005069346A1 true WO2005069346A1 (ja) | 2005-07-28 |
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ID=34792142
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/JP2005/000625 WO2005069346A1 (ja) | 2004-01-14 | 2005-01-13 | 写像型電子顕微鏡、電子顕微鏡、試料面観察方法及びマイクロデバイスの製造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7456401B2 (ja) |
EP (1) | EP1720194A1 (ja) |
JP (1) | JPWO2005069346A1 (ja) |
KR (1) | KR20060120144A (ja) |
CN (1) | CN1910725A (ja) |
WO (1) | WO2005069346A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100749903B1 (ko) | 2006-09-21 | 2007-08-21 | 김경수 | 편광기 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP7201523B2 (ja) | 2018-06-07 | 2023-01-10 | 株式会社ニューフレアテクノロジー | マルチ電子ビーム偏向器及びマルチビーム画像取得装置 |
CN113964006B (zh) * | 2020-07-21 | 2023-09-12 | 聚束科技(北京)有限公司 | 一种粒子束装置束斑追踪方法及系统 |
Citations (4)
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JPH11238484A (ja) * | 1998-02-23 | 1999-08-31 | Hitachi Ltd | 投射方式の荷電粒子顕微鏡および基板検査システム |
JP2001332593A (ja) * | 2000-05-19 | 2001-11-30 | Advantest Corp | 荷電粒子線試験装置 |
JP2002141010A (ja) * | 2000-11-02 | 2002-05-17 | Nikon Corp | 電子線装置及びその電子線装置を用いたデバイスの製造方法 |
JP2002216692A (ja) * | 2001-01-17 | 2002-08-02 | Nikon Corp | 荷電粒子線装置及びそのような装置を用いたデバイス製造方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP3346172B2 (ja) | 1996-06-07 | 2002-11-18 | 株式会社日立製作所 | 走査形顕微鏡 |
PL338538A1 (en) * | 2000-02-20 | 2001-08-27 | Krzysztof Grzelakowski | Emission-type electron microscope |
US7138629B2 (en) * | 2003-04-22 | 2006-11-21 | Ebara Corporation | Testing apparatus using charged particles and device manufacturing method using the testing apparatus |
-
2005
- 2005-01-13 EP EP05703855A patent/EP1720194A1/en not_active Withdrawn
- 2005-01-13 KR KR1020067010183A patent/KR20060120144A/ko not_active Application Discontinuation
- 2005-01-13 US US10/585,995 patent/US7456401B2/en active Active
- 2005-01-13 WO PCT/JP2005/000625 patent/WO2005069346A1/ja not_active Application Discontinuation
- 2005-01-13 JP JP2005517117A patent/JPWO2005069346A1/ja not_active Withdrawn
- 2005-01-13 CN CNA200580002507XA patent/CN1910725A/zh active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11238484A (ja) * | 1998-02-23 | 1999-08-31 | Hitachi Ltd | 投射方式の荷電粒子顕微鏡および基板検査システム |
JP2001332593A (ja) * | 2000-05-19 | 2001-11-30 | Advantest Corp | 荷電粒子線試験装置 |
JP2002141010A (ja) * | 2000-11-02 | 2002-05-17 | Nikon Corp | 電子線装置及びその電子線装置を用いたデバイスの製造方法 |
JP2002216692A (ja) * | 2001-01-17 | 2002-08-02 | Nikon Corp | 荷電粒子線装置及びそのような装置を用いたデバイス製造方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100749903B1 (ko) | 2006-09-21 | 2007-08-21 | 김경수 | 편광기 |
Also Published As
Publication number | Publication date |
---|---|
CN1910725A (zh) | 2007-02-07 |
US20070164217A1 (en) | 2007-07-19 |
EP1720194A1 (en) | 2006-11-08 |
JPWO2005069346A1 (ja) | 2007-09-06 |
KR20060120144A (ko) | 2006-11-24 |
US7456401B2 (en) | 2008-11-25 |
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