WO2005061758A1 - Systeme de transfert - Google Patents

Systeme de transfert Download PDF

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Publication number
WO2005061758A1
WO2005061758A1 PCT/GB2004/005346 GB2004005346W WO2005061758A1 WO 2005061758 A1 WO2005061758 A1 WO 2005061758A1 GB 2004005346 W GB2004005346 W GB 2004005346W WO 2005061758 A1 WO2005061758 A1 WO 2005061758A1
Authority
WO
WIPO (PCT)
Prior art keywords
transfer chamber
gas
chamber
transfer
evacuation
Prior art date
Application number
PCT/GB2004/005346
Other languages
English (en)
Inventor
Stuart Charles Coles
David Alan Turrell
Kristian Laskey
Allister Watson
David Paul Manson
Original Assignee
The Boc Group Plc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by The Boc Group Plc filed Critical The Boc Group Plc
Publication of WO2005061758A1 publication Critical patent/WO2005061758A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C23C14/566—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases using a load-lock chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring

Definitions

  • the present invention relates to a transfer system, and to a method of operating the same.
  • Vacuum processing is commonly used in the manufacture of semiconductor devices to deposit thin films on to substrates.
  • a processing chamber is evacuated using a vacuum pump to a very low pressure, which, depending on the type of process, may be as low as 10 "6 mbar, and feed gases are introduced to the evacuated chamber to cause the desired material to be deposited on one or more substrates located in the chamber.
  • feed gases are introduced to the evacuated chamber to cause the desired material to be deposited on one or more substrates located in the chamber.
  • the substrate is removed from the chamber and another substrate is inserted for repetition of the deposition process.
  • the load lock chamber typically has a first window, which can be selectively opened to allow substrates to be transferred between the load lock chamber and the transfer chamber, and a second window, which can be selectively opened to the atmosphere to allow substrates to be inserted into and removed from the load lock chamber.
  • the processing chamber is maintained at the desired vacuum by the processing chamber vacuum pump.
  • the second window is opened to the atmosphere to allow the substrate to be inserted into the load lock chamber.
  • the second window is then closed, and, using a load lock vacuum pump, the load lock chamber is evacuated until the load lock chamber is at substantially the same pressure as the transfer chamber, typically around 0.1 mbar.
  • the first window is then opened to allow the substrate to be transferred to the transfer chamber.
  • the transfer chamber is then evacuated to a pressure at substantially the same pressure as the processing chamber, whereupon the substrate is transferred to the processing chamber.
  • the processed substrate is transferred back to the load lock chamber.
  • the pressure in the load lock chamber is brought up to atmospheric pressure by allowing a non-reactive gas, such as air or nitrogen, to flow into the load lock chamber.
  • a non-reactive gas such as air or nitrogen
  • the second window is opened to allow the processed substrate to be removed.
  • a "soft start" may be implemented whereby a significantly reduced pressure reduction rate is used, as illustrated in Figure 2, such that the temperature (dashed line) does not dip to such low levels during evacuation of the load lock chamber, and hence condensation formation may be avoided.
  • the safety factor involved in this reduced pressure reduction rate leads to increased pump down time and hence cycle time and can, therefore, be undesirable.
  • heating elements may be provided to prevent the temperature from falling to a level below that at which condensation may be formed at the pressures involved.
  • providing such heating elements can lead to an increased level of complexity of the load lock system, which could result in reduced reliability together with an increased power requirement.
  • a further alternative, known technique is to modify the humidity of the environment locally to the substrate to reduce the likelihood of condensation formation thereon.
  • These techniques rely on provision of a curtain of dry gas over the substrate during evacuation of the load lock chamber. Provision of additional equipment within the load lock chamber increases the complexity of the device which, in turn, reduces the reliability of the overall system. Any failing in the curtain causes a corresponding section of the substrate to be exposed to the ambient atmosphere present in the remainder of the load lock chamber and in these circumstances condensation may still form, resulting in an increased risk of at least part of the product being faulty.
  • a method of operating a transfer system comprising a transfer chamber for receiving a substrate to be transferred to a process chamber, the method comprising controlling the humidity of gas within the transfer chamber to inhibit condensation of vapour, for example water vapour, on a substrate located within the transfer chamber during evacuation of the transfer chamber, and subsequently returning to the transfer chamber the gas evacuated from the transfer chamber to raise the pressure therein.
  • vapour for example water vapour
  • a transfer system comprising a transfer chamber for receiving a substrate to be transferred to a process chamber, means for evacuating the transfer chamber, means for controlling the humidity of gas within the transfer chamber to inhibit condensation of vapour, for example water vapour, on a substrate located within the transfer chamber during evacuation of the transfer chamber, and means for returning the gas evacuated from the transfer chamber to the transfer chamber to raise the pressure therein.
  • the transfer system is a load lock system
  • the present invention also provides a method of operating a load lock system, the load lock system comprising a load lock chamber for receiving a substrate to be transferred to a process chamber, the method comprising controlling the humidity of gas within the load lock chamber to inhibit condensation of vapour, for example water vapour, on a substrate located within the load lock chamber during evacuation of the load lock chamber, and subsequently returning to the load lock chamber the gas evacuated from the load lock chamber to raise the pressure therein.
  • vapour for example water vapour
  • the present invention further provides a load lock system comprising a load lock chamber for receiving a substrate to be transferred to a process chamber, means for evacuating the load lock chamber, means for controlling the humidity of gas within the load lock chamber to inhibit condensation of vapour, for example water vapour, on a substrate located within the load lock chamber during evacuation of the load lock chamber, and means for returning the gas evacuated from the load lock chamber to the load lock chamber to raise the pressure therein.
  • a load lock system comprising a load lock chamber for receiving a substrate to be transferred to a process chamber, means for evacuating the load lock chamber, means for controlling the humidity of gas within the load lock chamber to inhibit condensation of vapour, for example water vapour, on a substrate located within the load lock chamber during evacuation of the load lock chamber, and means for returning the gas evacuated from the load lock chamber to the load lock chamber to raise the pressure therein.
  • a method of operating a transfer system comprising a transfer chamber for receiving a substrate to be transferred to a process chamber, the method comprising monitoring at least one parameter of the group of humidity, pressure and temperature of gas within the transfer chamber and using the results of the monitoring to maximise the rate of evacuation of the transfer chamber whilst inhibiting condensation of vapour, for example water vapour, on a substrate located within the transfer chamber during evacuation of the transfer chamber, wherein the evacuation rate is controlled by varying the conductance of a variable flow control device located between the transfer chamber and means for evacuating the transfer chamber.
  • a transfer system comprising a transfer chamber for receiving a substrate to be transferred to a process chamber, means for evacuating the transfer chamber, monitoring means for monitoring at least one parameter of the group of temperature, pressure and humidity of gas within the transfer chamber, and control means for receiving the signal from the monitoring means and using the received signals to maximise the evacuation rate of the transfer chamber whilst inhibiting condensation of vapour, for example water vapour, on a substrate located within the transfer chamber, wherein the control means comprises a variable flow control device positioned between the transfer chamber and the evacuation means, and means for varying the conductance of the variable flow control device to control the rate of evacuation of the transfer chamber.
  • Figure 3 illustrates the condensation temperatures of air with varying relative humidity.
  • the present invention makes use of this relationship by causing the humidity of the venting gas to be reduced below that of the ambient air to allow lower temperatures to be experienced before condensation occurs on the substrate.
  • the reduction of humidity thus permits a faster transfer chamber evacuation time whilst maintaining a reduced risk of forming condensates on the substrate.
  • the evacuation time may be further reduced as the evacuation rate may be maximised for any particular process cycle.
  • Figure 1 shows a typical pressure and corresponding temperature curves over time for fluid within a load lock chamber under evacuation
  • Figure 2 shows similar curves to Figure 1 where a "soft start", using a significantly slower evacuation rate, is used;
  • Figure 3 shows a graph of condensation temperature of air with varying relative humidity
  • Figure 4 shows a first embodiment of a transfer system according to the present invention.
  • Figure 5 shows a second embodiment of a transfer system according to the present invention.
  • Figure 4 illustrates a transfer system 1 according to a first embodiment of the present invention.
  • the technology is equally applicable to various types of transfer system for transferring a substrate from one region of a process tool at a first ambient pressure to another region having a second ambient pressure.
  • a conventional transfer chamber is located between the load lock chamber and the process chamber. Such a chamber may typically be evacuated by turbo-molecular vacuum pumps.
  • the transfer system is a load lock system 1.
  • the load lock system 1 comprises a load lock chamber 10.
  • the load lock chamber 10 is connected to a transfer chamber (not shown) to enable a substrate inserted into the load lock chamber 10 to be transferred to a process chamber (not shown) for processing and to enable the subsequently processed substrate to be returned to the load lock chamber 10 for removal and replacement with a fresh substrate.
  • the load lock chamber 10 is in fluid communication with a buffer chamber 11 via control valve 21 , and with vacuum pumps 12 via control valve 22.
  • the buffer chamber 11 and vacuum pumps 12 are in fluid communication via a control valve 23 to enable the buffer chamber to be pre-evacuated by the pumps 12.
  • a gas filter 13 is provided downstream from the pumps 12 to remove impurities from the gas stream evacuated by the pumps 12.
  • a low-pressure storage vessel 14 is provided downstream from the filter 13.
  • a first outlet from the storage vessel 14 is directly connected to a compressor 16, which is, in turn, connected to a first inlet of a high-pressure storage vessel 17.
  • a second outlet from the storage vessel 14 is connected to a gas dryer 15, so that gas output from the storage vessel 14 may be selectively routed to the dryer 15 before passing to the compressor 16.
  • a source 18 of clean, dry vent gas, such as nitrogen, is connected to a second inlet of the high-pressure storage vessel 17 to provide, as required, additional clean gas.
  • the gas source 18 may also provide a source of purge gas for cooling the pumps 12 during operation.
  • the outlet from the high-pressure storage vessel 17 is connected to the load lock chamber 10 via control valve 26.
  • a pressure relief valve 19 is also typically located in fluid communication with the outlet of the high-pressure storage vessel 17 to prevent over pressurisation of the load lock system 1.
  • valves 25 and 26 are initially opened to enable the load lock chamber 10 to be supplied with a stream of vent gas from the gas source 18.
  • the supply of vent gas may be controlled so as to create a pressure in the load lock chamber 10 which is greater than atmospheric pressure, so that when a substrate is inserted into the load lock chamber 10, the positive pressure gradient prevents ambient air from being drawn into the load lock chamber, thereby retaining the controlled humidity within the load lock chamber 10.
  • valves 25 and 26 are closed, and a substrate is inserted into the chamber 10.
  • the load lock chamber 10 is evacuated by opening control valve 21 to allow gas to flow from the load lock chamber 10 into the pre-evacuated buffer chamber 11.
  • the degree of opening of the valve 21 controls the rate of evacuation of the load lock chamber 10.
  • a diffuser 32 may be provided upstream from the pre-evacuated chamber 11 to minimise the noise generated during the early stages of evacuation of the load lock chamber 10.
  • valve 21 is closed and valve 22 opened to allow the vacuum pumps 12 to continue the evacuation of the load lock chamber 10 until the required operating conditions are reached (typically at or around 0.1 mbar).
  • valve 22 is closed and the substrate is moved into the transfer chamber. During this period the vacuum pumps continue to run and valve 23 is opened to return the buffer volume 11 to its original lower pressure, in anticipation of the next cycle of load lock system operation.
  • the gas is recirculated to avoid the associated high levels of consumption. Downstream from the vacuum pumps 12, the exhausted vent gas is conveyed through the gas filter 13 to remove any impurities therefrom prior to entering low- pressure storage tank 14. From here, the exhausted vent gas may optionally be diverted through dryer 15 to dehumidify the exhausted vent gas, so that formation of condensation can be avoided in the load lock chamber 10 in the subsequent cycle. As it is necessary to raise the pressure of the exhausted vent gas so that elevation of the pressure in the load lock chamber 10 can be achieved rapidly following the return of the processed substrate to the load lock chamber 10, the exhausted vent gas is, consequently, passed through a compressor 16 and then stored at a higher pressure in the high-pressure storage tank 17.
  • the processed substrate is returned to the load lock chamber 10 from the transfer chamber, and the pressure in the load lock chamber 10 is increased in preparation for the removal of the processed substrate from the load lock chamber 10.
  • the return of the vent gas is controlled by the controlled opening of valve 26.
  • An additional diffuser 33 may also be provided downstream from the valve 26 to suppress noise generated during the return of the vent gas to the load lock chamber 10.
  • the pressure in the load lock chamber 10 may be raised slightly above atmospheric levels to achieve a positive pressure gradient to and thereby inhibit entrainment of air into the load lock chamber 10 during the replacement of the processed substrate with a fresh substrate.
  • an active noise control enclosure may be provided with a suitable control device 31.
  • the load lock chamber 10 is evacuated at the highest possible rate, as illustrated in Figure 1 the temperature within the load lock chamber 10 can approach -30°C.
  • the relative humidity of the gas within the load lock chamber 10 should be in the region of 3%.
  • soft starts introduce a significant safety factor and a steady, slow evacuation rate is realised to avoid formation of condensation.
  • temperature and/or pressure of the gas within the load lock chamber 10 are monitored and used to control the rate of evacuation of the load lock chamber 10.
  • FIG. 5 illustrates the second embodiment of the present invention, the features of which can be readily incorporated into the first embodiment of the invention.
  • the load lock chamber 10 is connected to a pre-evacuated buffer chamber 11 and two vacuum pumps 12.
  • a sensor 41 is provided within the load lock chamber 10 to monitor environmental parameters, such as temperature, pressure and relative humidity of the gas within the load lock chamber 10.
  • Sensor 41 is configured to generate a signal 42 indicative of the monitored parameters and to supply signal 42 to a controller 43.
  • Controller 43 utilises this signal 42 to generate control signals, which are supplied to valves 21' and 22' to vary the conductance of the valves to control the rate of evacuation of load lock chamber 10 so as to achieve an optimised pump down that is able to achieve rapid evacuation whilst avoiding the condensation limits of Figure 3.
  • Each of the valves 21', 22' may be any flow control device having a conductance that can be varied depending on, or in proportion to, a received control signal.
  • Such monitoring can lead to sophisticated active control such that the controller 43 is constantly sending signals to the valves 21' or 22' based on real time variations in the monitored parameters of the gas within the load lock chamber 10.
  • the evacuation rate can be determined as a complex function of time elapsed such that predetermined instructions can be sent to the valves 21 ', 22' by the controller 43.
  • These instructions may be derived from the monitored parameters of the previous cycle of the process or alternatively may be standardised for each particular type of process.
  • the instructions may be based on a predetermined complex function varying with elapsed time, but constant monitoring can be undertaken in order to act as a verification check to ensure that condensation formation is avoided in the event of some deviation from the standard repeated process.
  • the control system may be used to effect real-time, fine tuning of the evacuation cycle rather than needing to achieve real-time full control of the evacuation.
  • control valve 21 may need to be particularly sensitive and to implement such a valve may be prohibitively expensive.
  • the pump down may be initiated by conventional "soft start” techniques using the vacuum pumps 12 to enable an increased level of control.
  • the valve 21 between the load lock chamber 10 and the buffer chamber 11 may then be opened part way through the evacuation procedure to gain the benefit of the rapid reduction in pressure.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

On décrit deux techniques utiles pour inhiber l'effet de Wilson qui se produit lors d'une diminution rapide de la pression dans une chambre de blocage de charge, pouvant provoquer la formation de dépôts particulaires sur un substrat situé dans la chambre. Dans la première technique, l'humidité relative du gaz présent dans la chambre de blocage de charge est réduite du fait du remplacement de l'air atmosphérique par un gaz inerte sec. Ce gaz est retenu dans le système et remis en circulation entre les cycles de pompage pour réduire les coûts. Dans la deuxième technique, pendant la vidange la température et la pression du gaz de ventilation dans la chambre de blocage de charge sont surveillées pour maximiser la vitesse d'évacuation tout en empêchant l'effet de Wilson.
PCT/GB2004/005346 2003-12-24 2004-12-21 Systeme de transfert WO2005061758A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB0329933A GB0329933D0 (en) 2003-12-24 2003-12-24 Load lock
GB0329933.6 2003-12-24

Publications (1)

Publication Number Publication Date
WO2005061758A1 true WO2005061758A1 (fr) 2005-07-07

Family

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Family Applications (1)

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PCT/GB2004/005346 WO2005061758A1 (fr) 2003-12-24 2004-12-21 Systeme de transfert

Country Status (3)

Country Link
GB (1) GB0329933D0 (fr)
TW (1) TW200528374A (fr)
WO (1) WO2005061758A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102018102693A1 (de) 2018-02-07 2019-08-08 VON ARDENNE Asset GmbH & Co. KG Dehydratationsnetzwerk, Vakuumanordnung und Verfahren
EP4152368A1 (fr) * 2021-09-21 2023-03-22 Kokusai Electric Corp. Appareil de traitement de substrat, procédé de fabrication de dispositif à semi-conducteur et programme

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117305801B (zh) * 2023-11-29 2024-03-08 龙焱能源科技（杭州）有限公司 用于基板镀膜的传动装置及镀膜传动系统

Citations (11)

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Publication number Priority date Publication date Assignee Title
JPS57194001A (en) * 1981-05-21 1982-11-29 Sankyo Sekkei Jimusho:Kk Circulating method for waste gas of indirect type dryer
JPS60253723A (ja) * 1985-03-20 1985-12-14 Matsushita Electric Ind Co Ltd 燃焼用酸素富化気体供給装置
US5242539A (en) * 1991-04-04 1993-09-07 Hitachi, Ltd. Plasma treatment method and apparatus
US5378283A (en) * 1992-12-04 1995-01-03 Tokyo Electron Kabushiki Kaisha Treating device
US5981399A (en) * 1995-02-15 1999-11-09 Hitachi, Ltd. Method and apparatus for fabricating semiconductor devices
US6080679A (en) * 1997-05-23 2000-06-27 Canon Kabushiki Kaisha High-speed soft evacuation process and system
EP1126508A2 (fr) * 2000-02-16 2001-08-22 Applied Materials, Inc. Appareil de traitement ayant un système de pompage intégré
US6402479B1 (en) * 2000-04-20 2002-06-11 Alcatel Apparatus for pumping out transfer chambers for transferring semiconductor equipment
US20030131902A1 (en) * 2002-01-11 2003-07-17 Dickinson Colin John Vacuum load lock, system including vacuum load lock, and associated methods
US20030172508A1 (en) * 2001-08-08 2003-09-18 Lam Research Corporation Rapid cycle chamber having a top vent with nitrogen purge
US6634845B1 (en) * 1999-06-18 2003-10-21 Tokyo Electron Limited Transfer module and cluster system for semiconductor manufacturing process

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57194001A (en) * 1981-05-21 1982-11-29 Sankyo Sekkei Jimusho:Kk Circulating method for waste gas of indirect type dryer
JPS60253723A (ja) * 1985-03-20 1985-12-14 Matsushita Electric Ind Co Ltd 燃焼用酸素富化気体供給装置
US5242539A (en) * 1991-04-04 1993-09-07 Hitachi, Ltd. Plasma treatment method and apparatus
US5378283A (en) * 1992-12-04 1995-01-03 Tokyo Electron Kabushiki Kaisha Treating device
US5981399A (en) * 1995-02-15 1999-11-09 Hitachi, Ltd. Method and apparatus for fabricating semiconductor devices
US6080679A (en) * 1997-05-23 2000-06-27 Canon Kabushiki Kaisha High-speed soft evacuation process and system
US6634845B1 (en) * 1999-06-18 2003-10-21 Tokyo Electron Limited Transfer module and cluster system for semiconductor manufacturing process
EP1126508A2 (fr) * 2000-02-16 2001-08-22 Applied Materials, Inc. Appareil de traitement ayant un système de pompage intégré
US6402479B1 (en) * 2000-04-20 2002-06-11 Alcatel Apparatus for pumping out transfer chambers for transferring semiconductor equipment
US20030172508A1 (en) * 2001-08-08 2003-09-18 Lam Research Corporation Rapid cycle chamber having a top vent with nitrogen purge
US20030131902A1 (en) * 2002-01-11 2003-07-17 Dickinson Colin John Vacuum load lock, system including vacuum load lock, and associated methods

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* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 007, no. 043 (C - 152) 19 February 1983 (1983-02-19) *
PATENT ABSTRACTS OF JAPAN vol. 010, no. 126 (M - 477) 10 May 1986 (1986-05-10) *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102018102693A1 (de) 2018-02-07 2019-08-08 VON ARDENNE Asset GmbH & Co. KG Dehydratationsnetzwerk, Vakuumanordnung und Verfahren
DE102018102693B4 (de) 2018-02-07 2024-06-27 VON ARDENNE Asset GmbH & Co. KG Dehydratationsnetzwerk, Vakuumanordnung und Verfahren
EP4152368A1 (fr) * 2021-09-21 2023-03-22 Kokusai Electric Corp. Appareil de traitement de substrat, procédé de fabrication de dispositif à semi-conducteur et programme

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GB0329933D0 (en) 2004-01-28
TW200528374A (en) 2005-09-01

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