WO2005057647A1 - シリコーン接着剤 - Google Patents
シリコーン接着剤 Download PDFInfo
- Publication number
- WO2005057647A1 WO2005057647A1 PCT/JP2004/018766 JP2004018766W WO2005057647A1 WO 2005057647 A1 WO2005057647 A1 WO 2005057647A1 JP 2004018766 W JP2004018766 W JP 2004018766W WO 2005057647 A1 WO2005057647 A1 WO 2005057647A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- silicon
- weight
- group
- component
- bonded
- Prior art date
Links
- 239000013464 silicone adhesive Substances 0.000 title claims abstract description 17
- 239000003795 chemical substances by application Substances 0.000 title claims abstract description 14
- 239000000203 mixture Substances 0.000 claims abstract description 34
- 239000004065 semiconductor Substances 0.000 claims abstract description 26
- 239000008188 pellet Substances 0.000 claims abstract description 24
- 229920002379 silicone rubber Polymers 0.000 claims abstract description 19
- 239000004945 silicone rubber Substances 0.000 claims abstract description 19
- 239000011521 glass Substances 0.000 claims abstract description 17
- 238000010438 heat treatment Methods 0.000 claims abstract description 13
- 238000005304 joining Methods 0.000 claims abstract description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 21
- 125000003342 alkenyl group Chemical group 0.000 claims description 18
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 15
- 229920001296 polysiloxane Polymers 0.000 claims description 15
- 239000003054 catalyst Substances 0.000 claims description 14
- 150000001875 compounds Chemical class 0.000 claims description 10
- 229910052697 platinum Inorganic materials 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 8
- 125000003545 alkoxy group Chemical group 0.000 claims description 7
- 230000004580 weight loss Effects 0.000 claims description 7
- 238000001723 curing Methods 0.000 claims description 6
- 238000013007 heat curing Methods 0.000 claims description 5
- 230000003197 catalytic effect Effects 0.000 claims description 2
- 238000004026 adhesive bonding Methods 0.000 claims 1
- 239000011347 resin Substances 0.000 abstract description 5
- 229920005989 resin Polymers 0.000 abstract description 5
- 238000007259 addition reaction Methods 0.000 abstract description 3
- 238000007789 sealing Methods 0.000 abstract description 3
- 230000001747 exhibiting effect Effects 0.000 abstract 1
- -1 hexeninole group Chemical group 0.000 description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 16
- 229910052710 silicon Inorganic materials 0.000 description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 13
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 10
- 229910052782 aluminium Inorganic materials 0.000 description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 229920001577 copolymer Polymers 0.000 description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 7
- 239000010936 titanium Substances 0.000 description 7
- 230000001070 adhesive effect Effects 0.000 description 6
- 229910000077 silane Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- 239000002253 acid Substances 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 5
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 5
- 238000011156 evaluation Methods 0.000 description 5
- 239000000945 filler Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 150000002430 hydrocarbons Chemical group 0.000 description 4
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 4
- 125000005375 organosiloxane group Chemical group 0.000 description 4
- 229920001843 polymethylhydrosiloxane Polymers 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- UMHKOAYRTRADAT-UHFFFAOYSA-N [hydroxy(octoxy)phosphoryl] octyl hydrogen phosphate Chemical compound CCCCCCCCOP(O)(=O)OP(O)(=O)OCCCCCCCC UMHKOAYRTRADAT-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 125000004432 carbon atom Chemical group C* 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 239000006059 cover glass Substances 0.000 description 3
- 125000004122 cyclic group Chemical group 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 150000003961 organosilicon compounds Chemical class 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 241000908596 Centistes Species 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 150000001336 alkenes Chemical class 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 2
- YHWCPXVTRSHPNY-UHFFFAOYSA-N butan-1-olate;titanium(4+) Chemical compound [Ti+4].CCCC[O-].CCCC[O-].CCCC[O-].CCCC[O-] YHWCPXVTRSHPNY-UHFFFAOYSA-N 0.000 description 2
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 239000013522 chelant Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 125000005388 dimethylhydrogensiloxy group Chemical group 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 2
- POILWHVDKZOXJZ-ARJAWSKDSA-M (z)-4-oxopent-2-en-2-olate Chemical compound C\C([O-])=C\C(C)=O POILWHVDKZOXJZ-ARJAWSKDSA-M 0.000 description 1
- KTXWGMUMDPYXNN-UHFFFAOYSA-N 2-ethylhexan-1-olate;titanium(4+) Chemical compound [Ti+4].CCCCC(CC)C[O-].CCCCC(CC)C[O-].CCCCC(CC)C[O-].CCCCC(CC)C[O-] KTXWGMUMDPYXNN-UHFFFAOYSA-N 0.000 description 1
- BWLBGMIXKSTLSX-UHFFFAOYSA-N 2-hydroxyisobutyric acid Chemical compound CC(C)(O)C(O)=O BWLBGMIXKSTLSX-UHFFFAOYSA-N 0.000 description 1
- SRLPPRVVQNACSW-UHFFFAOYSA-L 2-hydroxypropanoate;titanium(2+) Chemical compound [Ti+2].CC(O)C([O-])=O.CC(O)C([O-])=O SRLPPRVVQNACSW-UHFFFAOYSA-L 0.000 description 1
- HNNQYHFROJDYHQ-UHFFFAOYSA-N 3-(4-ethylcyclohexyl)propanoic acid 3-(3-ethylcyclopentyl)propanoic acid Chemical compound CCC1CCC(CCC(O)=O)C1.CCC1CCC(CCC(O)=O)CC1 HNNQYHFROJDYHQ-UHFFFAOYSA-N 0.000 description 1
- XDLMVUHYZWKMMD-UHFFFAOYSA-N 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C(C)=C XDLMVUHYZWKMMD-UHFFFAOYSA-N 0.000 description 1
- KBQVDAIIQCXKPI-UHFFFAOYSA-N 3-trimethoxysilylpropyl prop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C=C KBQVDAIIQCXKPI-UHFFFAOYSA-N 0.000 description 1
- DEVXQDKRGJCZMV-UHFFFAOYSA-K Aluminum acetoacetate Chemical compound [Al+3].CC(=O)CC([O-])=O.CC(=O)CC([O-])=O.CC(=O)CC([O-])=O DEVXQDKRGJCZMV-UHFFFAOYSA-K 0.000 description 1
- 239000005711 Benzoic acid Substances 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 101150065749 Churc1 gene Proteins 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- OFOBLEOULBTSOW-UHFFFAOYSA-L Malonate Chemical compound [O-]C(=O)CC([O-])=O OFOBLEOULBTSOW-UHFFFAOYSA-L 0.000 description 1
- 102100038239 Protein Churchill Human genes 0.000 description 1
- 235000021355 Stearic acid Nutrition 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- QFJPQEKQIKSNBU-UHFFFAOYSA-M [Ti]O Chemical compound [Ti]O QFJPQEKQIKSNBU-UHFFFAOYSA-M 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000002318 adhesion promoter Substances 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical class [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 125000003710 aryl alkyl group Chemical group 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 229920005601 base polymer Polymers 0.000 description 1
- 235000010233 benzoic acid Nutrition 0.000 description 1
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 125000004369 butenyl group Chemical group C(=CCC)* 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 239000003431 cross linking reagent Substances 0.000 description 1
- 125000004093 cyano group Chemical group *C#N 0.000 description 1
- 125000000596 cyclohexenyl group Chemical group C1(=CCCCC1)* 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- 125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000004205 dimethyl polysiloxane Substances 0.000 description 1
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 1
- XMQYIPNJVLNWOE-UHFFFAOYSA-N dioctyl hydrogen phosphite Chemical compound CCCCCCCCOP(O)OCCCCCCCC XMQYIPNJVLNWOE-UHFFFAOYSA-N 0.000 description 1
- 229920005645 diorganopolysiloxane polymer Polymers 0.000 description 1
- VTIXMGZYGRZMAW-UHFFFAOYSA-N ditridecyl hydrogen phosphite Chemical compound CCCCCCCCCCCCCOP(O)OCCCCCCCCCCCCC VTIXMGZYGRZMAW-UHFFFAOYSA-N 0.000 description 1
- XHWQYYPUYFYELO-UHFFFAOYSA-N ditridecyl phosphite Chemical compound CCCCCCCCCCCCCOP([O-])OCCCCCCCCCCCCC XHWQYYPUYFYELO-UHFFFAOYSA-N 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 description 1
- XYIBRDXRRQCHLP-UHFFFAOYSA-N ethyl acetoacetate Chemical compound CCOC(=O)CC(C)=O XYIBRDXRRQCHLP-UHFFFAOYSA-N 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- SBRXLTRZCJVAPH-UHFFFAOYSA-N ethyl(trimethoxy)silane Chemical compound CC[Si](OC)(OC)OC SBRXLTRZCJVAPH-UHFFFAOYSA-N 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910021485 fumed silica Inorganic materials 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 125000005641 methacryl group Chemical group 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- 125000001971 neopentyl group Chemical group [H]C([*])([H])C(C([H])([H])[H])(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 125000001400 nonyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 1
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 1
- WWZKQHOCKIZLMA-UHFFFAOYSA-N octanoic acid Chemical compound CCCCCCCC(O)=O WWZKQHOCKIZLMA-UHFFFAOYSA-N 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000000962 organic group Chemical group 0.000 description 1
- 150000001282 organosilanes Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical class O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- 125000000286 phenylethyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000004344 phenylpropyl group Chemical group 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- HKJYVRJHDIPMQB-UHFFFAOYSA-N propan-1-olate;titanium(4+) Chemical compound CCCO[Ti](OCCC)(OCCC)OCCC HKJYVRJHDIPMQB-UHFFFAOYSA-N 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000011949 solid catalyst Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000008117 stearic acid Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 125000003944 tolyl group Chemical group 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 238000004073 vulcanization Methods 0.000 description 1
- 125000005023 xylyl group Chemical group 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49503—Lead-frames or other flat leads characterised by the die pad
- H01L23/49513—Lead-frames or other flat leads characterised by the die pad having bonding material between chip and die pad
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J183/00—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Adhesives based on derivatives of such polymers
- C09J183/04—Polysiloxanes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/05624—Aluminium [Al] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/485—Material
- H01L2224/48505—Material at the bonding interface
- H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/485—Material
- H01L2224/48505—Material at the bonding interface
- H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
- H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/48617—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
- H01L2224/48624—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/852—Applying energy for connecting
- H01L2224/85201—Compression bonding
- H01L2224/85205—Ultrasonic bonding
- H01L2224/85207—Thermosonic bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01027—Cobalt [Co]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/078—Adhesive characteristics other than chemical
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
- H01L2924/15747—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Definitions
- the present invention relates to a silicone adhesive (die bonding agent) for joining a semiconductor pellet to a semiconductor pellet mounting member such as a tab.
- a silicone adhesive die bonding agent
- a semiconductor pellet made of silicon is bonded to a semiconductor pellet mounting member such as a tab, which is a support member thereof, with an adhesive (a die pond agent) such as an epoxy resin or a polyimide resin.
- an adhesive such as an epoxy resin or a polyimide resin.
- the lead frame is electrically connected and these integral parts are sealed with a sealing resin such as an epoxy resin, the silicone adhesive is used in consideration of cracks and other problems caused by the conventional die pond.
- a semiconductor device in which a semiconductor pellet and a tab are adhered to each other (Japanese Patent Laid-Open No. Sho 61-550300 '). This is an attempt to alleviate internal strain caused by the difference in the coefficient of thermal expansion between the semiconductor belt and the tab by using a silicone rubber elastic body.
- Japanese Patent Application Laid-Open No. 61-550300 discloses an addition reaction curing method in which the content of a low-molecular siloxane having a vapor pressure of 10 mmHg or more at 200 ° C is 500 ppm or less.
- the use of a silicone rubber composition is disclosed in Japanese Patent Application Laid-Open No. 2002-60719, in which a cyclic or linear low-molecular compound having 11 to 50 silicon atoms is used. It has been proposed to use an adhesive silicone rubber with a functional siloxane content of 3% by weight or less. Disclosure of the invention
- the reliability of the joining property can be also improved by the method disclosed in the above-mentioned Japanese Patent Application Laid-Open No. 61-550000 and the method disclosed in Japanese Patent Application Laid-Open No. It was found that there was room for improvement.
- An object of the present invention is to solve the drawbacks of the prior art and to provide a silicone adhesive which does not reduce wire bondability and further does not reduce the adhesion between the semiconductor bellet surface and the lead frame and the sealing resin. It is.
- a silicone adhesive composed of a specific addition reaction-curable silicone rubber composition is used as an adhesive for joining a semiconductor bellet and the pellet mounting member. It was found that it was very effective to complete the present invention.
- the present invention provides a semiconductor pellet and a pellet mounting member characterized in that contamination on a glass plate during heat curing is made of an addition reaction-curable silicone rubber composition having a contact angle of 70 ° or less on the glass plate. It is a silicone adhesive for bonding to.
- the present invention provides a semiconductor bellet and a pellet mounting member using a silicone adhesive made of an addition-reaction-curable silicone rubber composition having a contact angle of 70 ° or less on a glass plate during heat curing. Is a method of joining Furthermore, the present invention provides a method for joining a pellet of an addition-reaction-curable silicone rubber thread having a contact angle of 70 ° or less on a glass plate during heating and curing to the pellet mounting member. Use for silicone adhesives. Detailed description of the invention
- the present invention relates to an addition-curable silicone rubber in which contamination on a glass plate during heat curing is 70 ° or less on a glass plate.
- a silicone adhesive for joining a semiconductor pellet and the pellet mounting member, which is characterized by being composed of a composition, and such an addition-reaction-curable silicone rubber thread is,
- composition 1 (D) a platinum-based catalyst; an addition reaction-curable silicone rubber composition comprising a catalytic amount (hereinafter, referred to as the present composition 1);
- composition 2 of the present invention (Hereinafter, referred to as composition 2 of the present invention).
- composition 1 of the present invention will be described.
- the one shown in (1) is used.
- R 1 is the same or different and is an unsubstituted or substituted monovalent hydrocarbon group having 1 to 10 carbon atoms, and a is a positive number of 1 to 3.
- Examples of the unsubstituted or substituted monovalent hydrocarbon group bonded to the silicon atom represented by R 1 include a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, an isobutyl group, a tert-butyl group, and a pentyl group.
- R 1 is alkenyl groups (particularly, those having 2 to 8 carbon atoms are preferable, and those having 2 to 6 carbon atoms are more preferable).
- the content of the alkenyl group is determined based on the total organic group bonded to the silicon atom (ie, in the unsubstituted or substituted monovalent hydrocarbon group as R 1 in the above average composition formula (1)). 1-2 0 mole 0/0, especially 0. it is preferable that the 1 to 1 0 mol 0/0.
- the alkenyl group may be bonded to a silicon atom at the terminal of the molecular chain, to a silicon atom in the middle of the molecular chain, or to both, but the curing rate of the composition.
- the organopolysiloxane used in the present invention preferably contains at least an alkenyl group bonded to a silicon atom at the terminal of the molecular chain.
- R 1 other than the alkenyl group a methyl group, a phenyl group, and a 3,3,3-trifluoropropyl group are preferable.
- the structure of the above-mentioned organopolysiloxane is usually such that the main chain is composed of repeating diorganosiloxane units, and both ends of the molecular chain are a trimethylcyclooxy group, It is a diorganopolysiloxane having a basically linear structure, which is blocked with a triorganosiloxy group such as a phenylsuccinoxy group, a dimethylhydroxysiloxy group, a dimethylbulsixoxy group, and a trivinylsoxyloxy group. Partially branched or cyclic structures may be used.
- the average degree of polymerization is preferably from 100 to: L000, 000, particularly preferably from 200 to 100, 000, and more preferably 25.
- the viscosity at C is preferably from 100 to 100,000, OOO cSt (centist), especially from 1,000 to: 1,000, cst. Ray.
- the organopolysiloxane of the component (B) is, for example, stripped under heating at 100 to 140 ° C under reduced pressure of 10 mmHg or less, and the weight loss at 100 ° C for 1 hour is 5% by weight or less. It is.
- it acts as a crosslinking agent for component (A), and contains two or more silicon-bonded hydrogen atoms in one molecule, and has a linear, It may have any of a branched or cyclic structure.
- the compounding amount of the organopolysiloxane is sufficient to supply 0.5 to 3 silicon-bonded hydrogen atoms of the component to one alkenyl group of the component (A), and preferably It is enough to supply 1-2 pieces.
- methyl hydrogen cyclopolysiloxane methyl hydrogen siloxane / dimethyl siloxane cyclic copolymer, both ends trimethylsiloxy group blocked methyl hydrogen polysiloxane mouth, both ends trimethylsiloxy group blocked dimethyl Siloxane / methylhydrogensiloxane copolymer, dimethylpolysiloxane with dimethylhydrogensiloxy groups at both ends, dimethylsiloxane with dimethylhydrogenoxy at both ends, dimethylsiloxane with both ends ⁇ methylhydrodisiloxanesiloxane copolymer, at both ends Trimethylsiloxane-blocked methylhydrogensiloxane / diphenylsiloxane copolymer, both ends Trimethylsiloxane-blocked methylhydrogensiloxane / diphenylenosiloxane / dimethylsiloxane copolymer Dimethylhydrogensiloxy groups
- the component (C) of the present invention is an adhesiveness-imparting agent having a silicon atom-bonded alkoxy group and having no silicon atom-bonded hydrogen atom.
- the adhesion-imparting agent of the third component comprises, in the molecule, an alkoxy group bonded to a silicon atom and at least one reactive functional group selected from an alkenyl group, an attaryl group, a metharyl group and an epoxy group.
- An organosilicon compound containing at least two or more organosilanes or organosiloxane oligomers having about 2 to 50, preferably about 4 to 20 silicon atoms is suitably used.
- This organosilicon compound is used to give the silicone rubber composition an adhesive property to a semiconductor chip, a mounting portion, a lead frame, or the like, and a known compound can be used. Anything that does not inhibit sulfuric acid may be used.
- Such organosilicon compounds include, for example, alkoxyfunctional group-containing alkoxysilanes such as -glycidoxypropyltrimethoxysilane, 13- (3,, 4-epoxycyclohexyl) ethyltrimethoxysilane, vinyltrimethoxysilane, Alkoxy groups containing alkenyl groups such as burtriethoxysilane, burtri (methoxetoxy) silane, and alkoxy groups such as acryl- or methacryl-group-containing alkoxysilanes such as ⁇ -methacryloxypropyltrimethoxysilane and ⁇ -acryloxypropyltrimethoxysilane Examples include silane.
- alkoxyfunctional group-containing alkoxysilanes such as -glycidoxypropyltrimethoxysilane, 13- (3,, 4-epoxycyclohexyl) ethyltrimethoxysilane, vinyltrimethoxysi
- the component (C) is used in an amount of 0.1 to 10 parts by weight based on 100 parts by weight of the component (II).
- the platinum-based catalyst of the component (D) is a catalyst for curing the adhesive of the present invention.
- a catalyst known for an addition reaction can be used.
- examples of such a catalyst include a carrier such as platinum black, alumina and silica. Supported on solid platinum, chloroplatinic acid, alcohol-modified chloroplatinic acid, complexes of chloroplatinic acid and olefin, or complexes of platinum and biersiloxane.
- these catalysts if they are solid catalysts, they may be comminuted or dispersed to improve dispersibility. It is preferable that the particles have a small particle size and a large specific surface area.
- chloroplatinic acid or its complex with olefin this is dissolved in a solvent such as alcohol, ketone, ether or hydrocarbon. It is desirable to use it.
- the amount of the catalyst added may be appropriately adjusted so as to obtain a desired curing rate.However, in order to obtain a good cured product, those which are compatible with the siloxane such as Shiridani platinum acid, etc. It is desirable that the amount of platinum be in the range of l to 100 ppm based on the total amount of the above-mentioned components (A) and (B).
- composition 2 of the present invention the components (A), (B) and (D) are the same as in the composition 1 of the present invention.
- composition 2 of the present invention uses (E) an adhesion promoter and (F) an A1 or Ti compound instead of the component (C) of the composition 1 of the present invention.
- the adhesion imparting agent of the component (E) is not limited to having a silicon atom-bonded alkoxy group as in the component (C) and not having a silicon atom-bonded hydrogen atom, and includes the component (C).
- Various known adhesion-imparting agents can be used.
- Examples of the A1 compound of the component (F) include aluminum alcoholates such as (MeO) 3 Al, (EtO) 3 Al, and (a-PrO) 3 Al, naphthenic acid, stearic acid, octylic acid, and benzoic acid. By reacting an aluminum salt, aluminum alcoholate, and acetoacetic ester or dialkyl malonate.
- Examples thereof include aluminum chelates, organic acid salts of aluminum oxide, and aluminum dimethyl acetyl acetonate.
- Aluminum chelates and aluminum alkoxides are preferred from the viewpoint of hydrolysis.
- bisethyl acetoacetate aluminum monoacetyl acetonate or acetoalkoxyaluminum aluminum disopropylate is preferred because it is liquid and convenient to handle.
- Ti compound of component (F) examples include tetraalkoxy titanium such as tetra (n-butoxy) titanium, tetra (i-propoxy) titanium, tetrakis (2-ethylhexoxy) titanium, and tetra (tearoxy) titanium.
- tetraalkoxy titanium such as tetra (n-butoxy) titanium, tetra (i-propoxy) titanium, tetrakis (2-ethylhexoxy) titanium, and tetra (tearoxy) titanium.
- the amount of the component (F) is preferably 0.05 to 10 parts by weight, and more preferably 0.1 to 5 parts by weight, per 100 parts by weight of the component (A).
- the present invention may further include a filler.
- the filler is used not only to reinforce the silicone rubber composition, to provide necessary rubber strength, but also to maintain the viscosity required for the bonding operation.
- the filler is preferably a reinforcing silica-based filler.
- examples of the captive silica-based filler include fumed silica, hydrophobized silica, calcined silica, and precipitated silica.
- FIG. 1 is a schematic sectional view of an evaluation semiconductor device used for evaluation of wire bondability in an embodiment. ' Example
- An organosiloxane having a silicon-bonded hydrogen atom represented by 16 M was obtained.
- This siloxane was subjected to a stripping treatment under a reduced pressure of 2 Hg at a temperature of 120 ° C. for 2 to 4 hours to obtain an organosiloxane having the following heat loss at 100 ° C. for 1 hour.
- Component (C) (also serves as component (E) in this example)
- compositions of Nos. 1 to 8 were obtained by uniformly mixing the reganosiloxane additive in the amounts shown in Table 1.
- Compositions 6 to 8 are comparative compositions.
- the contact angle measurement on the glass plate was performed according to the method described below. (Measurement of contact angle on glass plate)
- the composition is applied on a 50 X 50 X lram glass plate so that the composition becomes 0.0100 to 0.0130 g, and a cover glass of 18 X 18 X 0.16 mm is placed thereon, and the composition spreads over the entire cover glass. We sandwich so that it spreads. It was placed in a glass Petri dish (70 ram inside diameter, 19 burrs deep), covered, and cured by heating at 150 ° C for 1 hour. After returning to room temperature, the contact angles with water were measured at the four corners on the cover glass and at five points at the center, and the average value was calculated.
- 6 is an epoxy resin and 7 is a copper external lead frame.
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Die Bonding (AREA)
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP04807125A EP1693890A1 (en) | 2003-12-10 | 2004-12-09 | Silicone adhesive agent |
US10/577,820 US20070212819A1 (en) | 2003-12-10 | 2004-12-09 | Silicone Adhesive |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003411502A JP4597508B2 (ja) | 2003-12-10 | 2003-12-10 | 半導体ペレットと半導体ペレット取付部材とを接合するためのシリコーン接着剤 |
JP2003-411502 | 2003-12-10 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2005057647A1 true WO2005057647A1 (ja) | 2005-06-23 |
Family
ID=34674993
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2004/018766 WO2005057647A1 (ja) | 2003-12-10 | 2004-12-09 | シリコーン接着剤 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20070212819A1 (ja) |
EP (1) | EP1693890A1 (ja) |
JP (1) | JP4597508B2 (ja) |
KR (1) | KR20060126464A (ja) |
CN (1) | CN100431121C (ja) |
WO (1) | WO2005057647A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1978060A1 (en) * | 2007-04-05 | 2008-10-08 | Shin-Etsu Chemical Co., Ltd. | Addition curing silicone rubber composition and its cured product |
JP2009173789A (ja) * | 2008-01-25 | 2009-08-06 | Momentive Performance Materials Inc | 光半導体封止用シリコーン組成物及びそれを用いた光半導体装置 |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4704987B2 (ja) | 2006-09-11 | 2011-06-22 | 信越化学工業株式会社 | 押出成型用シリコ−ンゴム組成物 |
JP5534640B2 (ja) | 2007-12-27 | 2014-07-02 | 東レ・ダウコーニング株式会社 | シリコーン系感圧接着剤組成物、感圧接着シートおよびシリコーンゴム積層体 |
KR100972565B1 (ko) * | 2008-05-26 | 2010-07-28 | 장암엘에스 주식회사 | 실리콘 코팅제 조성물 |
JP5534837B2 (ja) | 2010-01-28 | 2014-07-02 | 東レ・ダウコーニング株式会社 | 熱伝導性シリコーンゴム組成物 |
US8304991B2 (en) * | 2010-12-17 | 2012-11-06 | Momentive Performance Materials Japan Llc | Organic electroluminescent element sealing composition and organic light-emitting device |
JP5498465B2 (ja) * | 2011-10-19 | 2014-05-21 | 積水化学工業株式会社 | 光半導体装置用ダイボンド材及びそれを用いた光半導体装置 |
KR102268248B1 (ko) | 2014-01-29 | 2021-06-24 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 웨이퍼 가공체, 웨이퍼 가공용 가접착재, 및 박형 웨이퍼의 제조방법 |
CN104479621A (zh) * | 2014-12-08 | 2015-04-01 | 江苏诺飞新材料科技有限公司 | 耐高低温有机硅乳液 |
CN111253887B (zh) * | 2018-12-03 | 2021-10-26 | 丰田纺织株式会社 | 二剂型热熔粘接剂、固化物和交联时间的控制方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03157474A (ja) * | 1989-11-15 | 1991-07-05 | Toray Dow Corning Silicone Co Ltd | 接着剤 |
JP2000073041A (ja) * | 1998-09-01 | 2000-03-07 | Ge Toshiba Silicones Co Ltd | 接着性ポリオルガノシロキサン組成物 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2974700B2 (ja) * | 1989-11-30 | 1999-11-10 | 東レ・ダウコーニング・シリコーン株式会社 | 導電性接着剤 |
WO1994025966A1 (en) * | 1993-04-28 | 1994-11-10 | Mark Mitchnick | Conductive polymers |
JP3779623B2 (ja) * | 2001-08-30 | 2006-05-31 | 帝人化成株式会社 | 難燃性芳香族ポリカーボネート樹脂組成物 |
-
2003
- 2003-12-10 JP JP2003411502A patent/JP4597508B2/ja not_active Expired - Fee Related
-
2004
- 2004-12-09 EP EP04807125A patent/EP1693890A1/en not_active Withdrawn
- 2004-12-09 WO PCT/JP2004/018766 patent/WO2005057647A1/ja not_active Application Discontinuation
- 2004-12-09 KR KR1020067009141A patent/KR20060126464A/ko not_active Application Discontinuation
- 2004-12-09 CN CNB2004800370662A patent/CN100431121C/zh not_active Expired - Fee Related
- 2004-12-09 US US10/577,820 patent/US20070212819A1/en not_active Abandoned
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03157474A (ja) * | 1989-11-15 | 1991-07-05 | Toray Dow Corning Silicone Co Ltd | 接着剤 |
JP2000073041A (ja) * | 1998-09-01 | 2000-03-07 | Ge Toshiba Silicones Co Ltd | 接着性ポリオルガノシロキサン組成物 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1978060A1 (en) * | 2007-04-05 | 2008-10-08 | Shin-Etsu Chemical Co., Ltd. | Addition curing silicone rubber composition and its cured product |
US9045637B2 (en) | 2007-04-05 | 2015-06-02 | Shin-Etsu Chemical Co., Ltd. | Addition curing silicone rubber composition and its cured product |
JP2009173789A (ja) * | 2008-01-25 | 2009-08-06 | Momentive Performance Materials Inc | 光半導体封止用シリコーン組成物及びそれを用いた光半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
KR20060126464A (ko) | 2006-12-07 |
CN100431121C (zh) | 2008-11-05 |
EP1693890A1 (en) | 2006-08-23 |
US20070212819A1 (en) | 2007-09-13 |
CN1894785A (zh) | 2007-01-10 |
JP2005175119A (ja) | 2005-06-30 |
JP4597508B2 (ja) | 2010-12-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR101275046B1 (ko) | 핫 멜트형 실리콘 접착제 | |
EP0757080B1 (en) | Curable organosiloxane compositions and semiconductor devices | |
JP5025917B2 (ja) | 硬化性オルガノポリシロキサン組成物 | |
JP3420473B2 (ja) | シリコーン系接着性シート、その製造方法、および半導体装置 | |
ES2276890T3 (es) | Adhesivo para caucho de silicona. | |
JP6014299B2 (ja) | 熱伝導性シリコーン組成物及び半導体装置 | |
EP0432502B1 (en) | Semiconductor pellet adhesive and article made therewith | |
JP5602385B2 (ja) | 接着性ポリオルガノシロキサン組成物 | |
EP3099746B1 (en) | Silicone gel composition | |
KR100655626B1 (ko) | 실리콘계 접착성 시트 및 이의 제조방법 | |
CN115181426A (zh) | 固化性有机聚硅氧烷组合物以及电气电子元件的保护剂或粘接剂组合物 | |
JP6658428B2 (ja) | シリコーンゲル組成物及びその硬化物並びにパワーモジュール | |
JP2008239719A (ja) | シリコーンエラストマー組成物およびシリコーンエラストマー | |
KR102282547B1 (ko) | 다이 본딩용 경화성 실리콘 조성물 | |
JP4875251B2 (ja) | シリコーンゲル組成物 | |
JP2007002234A (ja) | 硬化性シリコーンゴム組成物及び半導体装置 | |
KR102322935B1 (ko) | 접착 촉진제 및 그것을 함유하여 이루어지는 경화성 오르가노폴리실록산 조성물 | |
JP3950490B2 (ja) | 導電性シリコーンゴム組成物および半導体装置 | |
WO2005057647A1 (ja) | シリコーン接着剤 | |
WO2020026760A1 (ja) | シリコーンゲル組成物及びその硬化物並びにパワーモジュール | |
JP2002060719A (ja) | 接着性シリコーンゴム組成物及び半導体装置 | |
JP4310620B2 (ja) | シリコーンゴム接着剤組成物 | |
JPH10101933A (ja) | 硬化性オルガノポリシロキサン組成物 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 200480037066.2 Country of ref document: CN |
|
AK | Designated states |
Kind code of ref document: A1 Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A1 Designated state(s): GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
WWE | Wipo information: entry into national phase |
Ref document number: 1020067009141 Country of ref document: KR |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2004807125 Country of ref document: EP |
|
WWP | Wipo information: published in national office |
Ref document number: 2004807125 Country of ref document: EP |
|
WWP | Wipo information: published in national office |
Ref document number: 1020067009141 Country of ref document: KR |
|
WWE | Wipo information: entry into national phase |
Ref document number: 10577820 Country of ref document: US Ref document number: 2007212819 Country of ref document: US |
|
WWP | Wipo information: published in national office |
Ref document number: 10577820 Country of ref document: US |
|
WWW | Wipo information: withdrawn in national office |
Ref document number: 2004807125 Country of ref document: EP |