WO2005035828A1 - Composition de decapage de resine photosensible - Google Patents
Composition de decapage de resine photosensible Download PDFInfo
- Publication number
- WO2005035828A1 WO2005035828A1 PCT/KR2004/002610 KR2004002610W WO2005035828A1 WO 2005035828 A1 WO2005035828 A1 WO 2005035828A1 KR 2004002610 W KR2004002610 W KR 2004002610W WO 2005035828 A1 WO2005035828 A1 WO 2005035828A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- stripping composition
- photoresist stripping
- group
- solvent
- corrosion inhibitor
- Prior art date
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 38
- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 31
- 238000005260 corrosion Methods 0.000 claims abstract description 37
- 230000007797 corrosion Effects 0.000 claims abstract description 37
- MTHSVFCYNBDYFN-UHFFFAOYSA-N anhydrous diethylene glycol Natural products OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 claims abstract description 29
- -1 diethylene glycol monoalkyl ether Chemical class 0.000 claims abstract description 21
- 239000003112 inhibitor Substances 0.000 claims abstract description 21
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 claims abstract description 6
- 150000001412 amines Chemical class 0.000 claims description 19
- 239000003586 protic polar solvent Substances 0.000 claims description 16
- 239000003880 polar aprotic solvent Substances 0.000 claims description 13
- 125000001931 aliphatic group Chemical group 0.000 claims description 12
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 9
- 150000001875 compounds Chemical class 0.000 claims description 8
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 6
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 6
- XGIDEUICZZXBFQ-UHFFFAOYSA-N 1h-benzimidazol-2-ylmethanethiol Chemical compound C1=CC=C2NC(CS)=NC2=C1 XGIDEUICZZXBFQ-UHFFFAOYSA-N 0.000 claims description 4
- OPKOKAMJFNKNAS-UHFFFAOYSA-N N-methylethanolamine Chemical compound CNCCO OPKOKAMJFNKNAS-UHFFFAOYSA-N 0.000 claims description 4
- 150000005619 secondary aliphatic amines Chemical class 0.000 claims description 4
- 150000003510 tertiary aliphatic amines Chemical class 0.000 claims description 4
- HXKKHQJGJAFBHI-UHFFFAOYSA-N 1-aminopropan-2-ol Chemical compound CC(O)CN HXKKHQJGJAFBHI-UHFFFAOYSA-N 0.000 claims description 3
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 claims description 3
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 claims description 3
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 3
- 150000003139 primary aliphatic amines Chemical class 0.000 claims description 3
- GIAFURWZWWWBQT-UHFFFAOYSA-N 2-(2-aminoethoxy)ethanol Chemical compound NCCOCCO GIAFURWZWWWBQT-UHFFFAOYSA-N 0.000 claims description 2
- COBPKKZHLDDMTB-UHFFFAOYSA-N 2-[2-(2-butoxyethoxy)ethoxy]ethanol Chemical compound CCCCOCCOCCOCCO COBPKKZHLDDMTB-UHFFFAOYSA-N 0.000 claims description 2
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 claims description 2
- 125000006539 C12 alkyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 claims description 2
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 claims description 2
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 claims description 2
- LHIJANUOQQMGNT-UHFFFAOYSA-N aminoethylethanolamine Chemical compound NCCNCCO LHIJANUOQQMGNT-UHFFFAOYSA-N 0.000 claims description 2
- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical compound O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 claims description 2
- GZBUMTPCIKCWFW-UHFFFAOYSA-N triethylcholine Chemical group CC[N+](CC)(CC)CCO GZBUMTPCIKCWFW-UHFFFAOYSA-N 0.000 claims description 2
- JLGLQAWTXXGVEM-UHFFFAOYSA-N triethylene glycol monomethyl ether Chemical compound COCCOCCOCCO JLGLQAWTXXGVEM-UHFFFAOYSA-N 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 30
- 229910052751 metal Inorganic materials 0.000 abstract description 20
- 239000002184 metal Substances 0.000 abstract description 20
- 238000004519 manufacturing process Methods 0.000 abstract description 12
- 239000003960 organic solvent Substances 0.000 abstract description 11
- 239000004065 semiconductor Substances 0.000 abstract description 10
- 230000001476 alcoholic effect Effects 0.000 abstract description 8
- 239000003963 antioxidant agent Substances 0.000 abstract description 3
- 230000003078 antioxidant effect Effects 0.000 abstract description 3
- 239000002798 polar solvent Substances 0.000 abstract description 3
- 239000000758 substrate Substances 0.000 description 13
- 239000002904 solvent Substances 0.000 description 11
- 238000005530 etching Methods 0.000 description 8
- 239000010408 film Substances 0.000 description 7
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 150000001896 cresols Chemical class 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 230000007261 regionalization Effects 0.000 description 3
- WTQZSMDDRMKJRI-UHFFFAOYSA-N 4-diazoniophenolate Chemical compound [O-]C1=CC=C([N+]#N)C=C1 WTQZSMDDRMKJRI-UHFFFAOYSA-N 0.000 description 2
- CMGDVUCDZOBDNL-UHFFFAOYSA-N 4-methyl-2h-benzotriazole Chemical compound CC1=CC=CC2=NNN=C12 CMGDVUCDZOBDNL-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- RLSSMJSEOOYNOY-UHFFFAOYSA-N m-cresol Chemical compound CC1=CC=CC(O)=C1 RLSSMJSEOOYNOY-UHFFFAOYSA-N 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- FBSFWRHWHYMIOG-UHFFFAOYSA-N methyl 3,4,5-trihydroxybenzoate Chemical compound COC(=O)C1=CC(O)=C(O)C(O)=C1 FBSFWRHWHYMIOG-UHFFFAOYSA-N 0.000 description 2
- 229920003986 novolac Polymers 0.000 description 2
- IWDCLRJOBJJRNH-UHFFFAOYSA-N p-cresol Chemical compound CC1=CC=C(O)C=C1 IWDCLRJOBJJRNH-UHFFFAOYSA-N 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 230000001235 sensitizing effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- DYSYTOUAGABXJV-UHFFFAOYSA-N 2-(methylamino)ethanol Chemical compound CNCCO.CNCCO DYSYTOUAGABXJV-UHFFFAOYSA-N 0.000 description 1
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 1
- XYUINKARGUCCQJ-UHFFFAOYSA-N 3-imino-n-propylpropan-1-amine Chemical compound CCCNCCC=N XYUINKARGUCCQJ-UHFFFAOYSA-N 0.000 description 1
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 1
- VWRUXXHWUZUAMT-UHFFFAOYSA-N C1=CC(O)(O)C(O)C(O)=C1C(=O)C1=CC=CC=C1 Chemical compound C1=CC(O)(O)C(O)C(O)=C1C(=O)C1=CC=CC=C1 VWRUXXHWUZUAMT-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 150000001346 alkyl aryl ethers Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229920006125 amorphous polymer Polymers 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- IAQRGUVFOMOMEM-UHFFFAOYSA-N but-2-ene Chemical group CC=CC IAQRGUVFOMOMEM-UHFFFAOYSA-N 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000003487 electrochemical reaction Methods 0.000 description 1
- 230000032050 esterification Effects 0.000 description 1
- 238000005886 esterification reaction Methods 0.000 description 1
- LIWAQLJGPBVORC-UHFFFAOYSA-N ethylmethylamine Chemical compound CCNC LIWAQLJGPBVORC-UHFFFAOYSA-N 0.000 description 1
- 238000005755 formation reaction Methods 0.000 description 1
- 238000007710 freezing Methods 0.000 description 1
- 230000008014 freezing Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000002779 inactivation Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- IBKQQKPQRYUGBJ-UHFFFAOYSA-N methyl gallate Natural products CC(=O)C1=CC(O)=C(O)C(O)=C1 IBKQQKPQRYUGBJ-UHFFFAOYSA-N 0.000 description 1
- 238000001393 microlithography Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000007348 radical reaction Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
Definitions
- the present invention relates to a photoresist stripping composition for
- LSI very large scale integration systems
- VLSI very large scale integration systems
- crystal displays are manufactured by photoetching.
- a photoresist film is formed on an inorganic substrate, e.g. a
- This resist pattern is etched and diffused, and then stripped off
- the TFT thin film transistor
- module part is manufactured by photolithography, as in manufacturing a
- a TFT module is manufactured by exposing a
- the etching process involves complicated chemical reactions on the resist surface
- the resist is not removed easily with a common resist stripper.
- plasma gas used in dry etching may cause a reaction of the substrate and the
- the byproduct is known to
- etching treatment substrate a bottom substrate, a sensitizing solution
- the stripper comprises a phenolic
- a water-soluble stripper comprising an organic amine, a polar
- a polar protic solvent refers to a solvent in which the solvent molecules have
- solvent refers to a solvent having relatively low polarity with no hydrogen atoms.
- the stripper may corrode aluminum, copper, etc.
- the galvanic effect refers to the phenomenon of two contacting
- amine is performed between the stripping process and the Dl rinsing process.
- IPA alcoholic organic solvent
- the IPA rinsing process is unavoidable to prevent corrosion of metals.
- the present invention provides a photoresist stripping
- composition comprising (a) an aliphatic organic amine, (b) a diethylene glycol
- corrosion inhibitor More particularly, it comprises 0.1-10 parts by weight of (d) the
- FIG. 1 shows the pattern obtained by treating a substrate with the conventional
- FIG. 2 shows the pattern obtained by performing the same process using the
- photoresist stripping composition of the present invention is photoresist stripping composition of the present invention.
- the present invention is characterized by performing a Dl rinsing process just after a stripping process, without an IPA rinsing process, by adding a corrosion
- present invention is not limited to a particular stripping solution comprising a specific
- the present invention provides a photoresist stripping composition comprising
- protic solvent (c) a polar aprotic solvent, and (d) a corrosion inhibitor.
- photoresist stripping composition comprises (a) 10-40 wt% of an aliphatic organic
- the aliphatic organic amine is at least one selected from the group
- aliphatic amine there are monoethanolamine, ethylene diamine,
- the polar protic solvent maintains initial composition of the stripping solution
- the resist can be removed effectively because of low surface tension at the
- solubility parameter of about 8-15, for example a
- diethylene glycol monoalkyl ether represented by Formula 1 below, is used. HOCH 2 CH 2 -O-CH 2 CH 2 -O-R., (1 ) where R-i is a C C alkyl.
- a diethylene glycol monoalkyl ether having a boiling point of at
- N,N-dimethylformamide, N.N-dimethylimidazole, y-butyrolactone, sulfolane, etc. may
- the polar protic solvent and the polar aprotic solvent may work alone, it is preferable to use them in combination for better results.
- the polar protic solvent and the polar aprotic solvent may work alone, it is preferable to use them in combination for better results.
- the content of the polar protic solvent and the polar aprotic solvent is not
- mercaptomethylbenzimidazole may be used.
- the corrosion inhibitor is preferably comprised at 0.1-10
- the metal pattern may corrode. Otherwise, if it exceeds 10
- the photoresist removal capacity is significantly reduced.
- the photoresist removal capacity is significantly reduced.
- the mercaptomethylbenzimidazole is 1 :1-3:1. Because the photoresist stripping composition of the present invention is
- composition of the present invention is useful for manufacturing semiconductor
- stripping composition of the present invention were tested as follows.
- a substrate was treated with a stripping solution using spray-type equipment.
- the stripping characteristics may worsen if an additive is comprised
- a conventional positive type of resist composition (DTFR-3650B, Dongjin
- the positive type of resist composition used in testing comprised an
- alkali-soluble resin as a film formation component
- a quinone diazide based compound as photosensitive component
- an organic solvent capable of dissolving them.
- cresol isomer mixture formaldehyde and a cresol isomer mixture was used.
- cresol isomer mixture formaldehyde and a cresol isomer mixture was used.
- NMEA N-Methylethanolamine
- compositions of the present invention As seen in Table 1, the compositions of the present invention (Examples 1-10)
- FIG. 1 shows the pattern obtained by treating a substrate with the conventional
- FIG. 2 shows the
- composition of the present invention is a composition of the present invention.
- composition of the present invention has very superior photoresist stripping
Landscapes
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
L'invention concerne une composition de décapage de résine photosensible comprenant au moins deux composants, contenant une amine aliphatique organique, un éther de diéthylèneglycol et de monoalkyle, un solvant polaire, etc. Cette composition de décapage de résine photosensible contient également un inhibiteur de corrosion qui est facilement dissout dans la composition de décapage et qui agit comme un antioxydant et un complexe durant le rinçage DI. Cette composition de décapage de résine photosensible, du fait qu'elle présente des caractéristiques de décapage supérieures et qu'elle empêche la corrosion des conducteurs métalliques, permet, d'une part, d'éliminer l'étape de rinçage à l'aide d'un solvant organique alcoolique (IPA) lors de la fabrication de modules ECL et de dispositifs à semi-conducteurs et, d'autre part, de réduire le temps de traitement et le coût de production.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2003-0070919 | 2003-10-13 | ||
| KR1020030070919A KR20040089429A (ko) | 2003-10-13 | 2003-10-13 | 포토레지스트 박리액 조성물 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2005035828A1 true WO2005035828A1 (fr) | 2005-04-21 |
Family
ID=34431693
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/KR2004/002610 WO2005035828A1 (fr) | 2003-10-13 | 2004-10-13 | Composition de decapage de resine photosensible |
Country Status (3)
| Country | Link |
|---|---|
| KR (1) | KR20040089429A (fr) |
| TW (1) | TW200516357A (fr) |
| WO (1) | WO2005035828A1 (fr) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008065284A (ja) * | 2006-09-11 | 2008-03-21 | Samsung Electronics Co Ltd | フォトレジスト剥離剤組成物、これを用いる配線形成方法及び薄膜トランジスタ基板の製造方法 |
| US8084184B2 (en) * | 2007-12-28 | 2011-12-27 | Samsung Electronics Co., Ltd. | Composition for removing photoresist and method of manufacturing an array substrate using the same |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20050087357A (ko) * | 2004-02-26 | 2005-08-31 | 주식회사 동진쎄미켐 | 포토레지스트 박리액 조성물 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5780406A (en) * | 1996-09-06 | 1998-07-14 | Honda; Kenji | Non-corrosive cleaning composition for removing plasma etching residues |
| US5798323A (en) * | 1997-05-05 | 1998-08-25 | Olin Microelectronic Chemicals, Inc. | Non-corrosive stripping and cleaning composition |
| US5988186A (en) * | 1991-01-25 | 1999-11-23 | Ashland, Inc. | Aqueous stripping and cleaning compositions |
| US20030138737A1 (en) * | 2001-12-27 | 2003-07-24 | Kazumasa Wakiya | Photoresist stripping solution and a method of stripping photoresists using the same |
-
2003
- 2003-10-13 KR KR1020030070919A patent/KR20040089429A/ko not_active Application Discontinuation
-
2004
- 2004-10-13 TW TW093131061A patent/TW200516357A/zh unknown
- 2004-10-13 WO PCT/KR2004/002610 patent/WO2005035828A1/fr active Application Filing
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5988186A (en) * | 1991-01-25 | 1999-11-23 | Ashland, Inc. | Aqueous stripping and cleaning compositions |
| US5780406A (en) * | 1996-09-06 | 1998-07-14 | Honda; Kenji | Non-corrosive cleaning composition for removing plasma etching residues |
| US5798323A (en) * | 1997-05-05 | 1998-08-25 | Olin Microelectronic Chemicals, Inc. | Non-corrosive stripping and cleaning composition |
| US20030138737A1 (en) * | 2001-12-27 | 2003-07-24 | Kazumasa Wakiya | Photoresist stripping solution and a method of stripping photoresists using the same |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008065284A (ja) * | 2006-09-11 | 2008-03-21 | Samsung Electronics Co Ltd | フォトレジスト剥離剤組成物、これを用いる配線形成方法及び薄膜トランジスタ基板の製造方法 |
| US8084184B2 (en) * | 2007-12-28 | 2011-12-27 | Samsung Electronics Co., Ltd. | Composition for removing photoresist and method of manufacturing an array substrate using the same |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20040089429A (ko) | 2004-10-21 |
| TW200516357A (en) | 2005-05-16 |
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