WO2005004223A1 - 半導体装置の低誘電率絶縁膜形成方法,その方法を用いた半導体装置および低誘電率絶縁膜形成装置 - Google Patents
半導体装置の低誘電率絶縁膜形成方法,その方法を用いた半導体装置および低誘電率絶縁膜形成装置 Download PDFInfo
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- WO2005004223A1 WO2005004223A1 PCT/JP2004/009330 JP2004009330W WO2005004223A1 WO 2005004223 A1 WO2005004223 A1 WO 2005004223A1 JP 2004009330 W JP2004009330 W JP 2004009330W WO 2005004223 A1 WO2005004223 A1 WO 2005004223A1
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- Prior art keywords
- dielectric constant
- insulating film
- low
- semiconductor device
- low dielectric
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 25
- 238000000034 method Methods 0.000 title claims description 40
- 238000009413 insulation Methods 0.000 title abstract description 5
- 238000012545 processing Methods 0.000 claims abstract description 72
- 239000000758 substrate Substances 0.000 claims abstract description 44
- 239000011248 coating agent Substances 0.000 claims abstract description 28
- 238000000576 coating method Methods 0.000 claims abstract description 28
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims abstract description 11
- 230000005284 excitation Effects 0.000 claims abstract description 6
- 238000006482 condensation reaction Methods 0.000 claims abstract description 5
- 238000009832 plasma treatment Methods 0.000 claims description 6
- 230000018044 dehydration Effects 0.000 claims description 3
- 238000006297 dehydration reaction Methods 0.000 claims description 3
- 229910002808 Si–O–Si Inorganic materials 0.000 claims description 2
- 238000001723 curing Methods 0.000 description 34
- 238000010894 electron beam technology Methods 0.000 description 17
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 10
- 235000012431 wafers Nutrition 0.000 description 9
- 239000007789 gas Substances 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000003507 refrigerant Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910002656 O–Si–O Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000004299 exfoliation Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000001029 thermal curing Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/02137—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material comprising alkyl silsesquioxane, e.g. MSQ
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02203—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
- H01L21/0234—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
- H01L21/3121—Layers comprising organo-silicon compounds
- H01L21/3122—Layers comprising organo-silicon compounds layers comprising polysiloxane compounds
- H01L21/3124—Layers comprising organo-silicon compounds layers comprising polysiloxane compounds layers comprising hydrogen silsesquioxane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
Definitions
- the present invention relates to a method for forming a low dielectric constant insulating film of a semiconductor device, a semiconductor device using the method, and an apparatus for forming a low dielectric constant insulating film.
- the present invention relates to a method and an apparatus for curing a low dielectric constant coating film used as an insulating film while maintaining a low dielectric constant.
- an insulating film having a lower dielectric constant than silicon oxide (Si (2) is used.
- Such a low dielectric constant insulating film is formed on a wafer by, for example, an SOD (Spin-on-Dielectric) system. That is, in the SOD system, an insulating film is formed by applying a liquid polymer-forming material on a wafer and performing a curing process (curing) such as a heating process. At the stage when the coating film is formed by the SOD system, the dielectric constant is low and remains constant.
- the insulating film is subjected to thermosetting while maintaining its low dielectric constant. This thermal curing process combines the molecules of the insulating film into a polymer to increase the strength due to the chemical bonding force, and avoids exfoliation of the films during chemical mechanical polishing (CMP). I have.
- Japanese Patent Application Laid-Open No. 8-236520 describes a method for curing an insulating film by generating plasma in a parallel plate plasma reactor.
- Patent Document 1 JP-A-8-236520 (Paragraph No. 0024, FIG. 2)
- the defects that generate leakage current such as -OH and CH3 in the S ⁇ G film are reduced by curing the insulating film at a temperature of 200 to 450 ° C for 60 minutes. ing.
- CH is indispensable to maintain a low dielectric constant.
- a main object of the present invention is to provide a method for forming an insulating film of a semiconductor device which can be cured in a short time while maintaining a low dielectric constant in the insulating film of the semiconductor device, and a method formed by such a method.
- An object of the present invention is to provide a semiconductor device having an insulating film and an apparatus for forming a low dielectric constant insulating film.
- a substrate on which a coating film is formed is placed in a vacuum vessel, and the coating film is formed with a high density at a low electron temperature by microwave excitation.
- the coating film can be cured in a short time while maintaining a low dielectric constant.
- the step of performing the curing treatment preferably includes curing the coating film for a treatment time of preferably 5 minutes or less. As a result, the number of processed sheets per time can be increased, so that the throughput in the semiconductor processing step can be increased.
- the step of curing preferably includes generating a plasma at a low electron temperature of 0.5-1.5 eV and an electron density of 10 11 -10 13 electrons / cm 3 .
- the step of curing preferably includes causing an intermolecular dehydration condensation reaction between a hydroxyl group in a molecule constituting the coating film and a hydroxyl group in another molecule.
- a semiconductor device includes a substrate, and an insulating film having a low dielectric constant applied on the substrate and cured by high-density plasma processing at a low electron temperature.
- the molecular structure of the insulating film cured by high-density plasma treatment includes, for example, those having a Si— ⁇ —Si bond.
- the low dielectric constant insulating film forming apparatus of the present invention is characterized in that a substrate on which a coating film is formed is placed in a vacuum vessel and high-density plasma processing is performed at a low electron temperature by microwave excitation. Curing means for curing the coating film while maintaining a low dielectric constant.
- the curing means for example, a low electron temperature of 0.5 to 1.5 eV and 10 11 to 10 13 / cm
- a substrate on which a low dielectric constant coating film is formed is placed in a vacuum vessel, and high-density plasma processing is performed at a low electron temperature by microwave excitation, so that a low dielectric constant is achieved.
- the coating film can be cured in a short time while maintaining it, and the coating film can be adhered to the underlying substrate.
- the number of processed sheets per hour can be increased, and the throughput in the semiconductor processing step can be increased.
- the low electron temperature of 0. 5-1. 5 eV and 10 "- 10 13 / cm 3 of plastics in the electron density By generating the energy, the energy of the electrons attracted to the coating film can be reduced, so that the damage caused when the electrons collide with the coating film can be reduced.
- FIG. 1 is a sectional view of a plasma substrate processing apparatus used for forming a low dielectric constant insulating film of the present invention.
- FIG. 2 is a partially cutaway perspective view of the slot plate shown in FIG. 1.
- FIG. 3 is a cross-sectional view of an insulating film showing a process of forming a low dielectric constant insulating film according to one embodiment of the present invention.
- FIG. 4 is a diagram showing molecular structures of an insulating film before a curing process and an insulating film cured by a plasma substrate processing apparatus.
- FIG. 5 is a diagram showing the relationship between the embodiment of the present invention and a conventional curing time by electron beam and dielectric constant.
- FIG. 6 is a diagram showing a relationship between an embodiment of the present invention and a conventional curing time by an electron beam and an elastic modulus.
- FIG. 7 is a table showing a comparison between another embodiment according to the present invention and a specific experimental result of a curing process using a conventional furnace and an electron beam. Explanation of symbols
- FIG. 1 is a sectional view of a plasma substrate processing apparatus used for forming an insulating film of the present invention
- FIG. 2 is a partially cutaway perspective view of the slot plate shown in FIG.
- the plasma substrate processing apparatus 10 includes a processing vessel 11 provided with a substrate holder 12 for holding a silicon wafer W as a substrate to be processed.
- the gas in the processing chamber 11 is exhausted from the exhaust ports 11A and 11B via an exhaust pump (not shown).
- the substrate holder 12 has a heater function of heating the silicon wafer W.
- the slot plate 14 includes a circular conductor plate 141 made of, for example, a disk-shaped thin copper plate, and the circular conductor plate 141 has a large number of slits 142 formed therein. These slits 142 form a uniform electric field distribution in the space inside the processing chamber 11.
- a dielectric plate 15 made of quartz, alumina, aluminum nitride, or the like is arranged.
- This dielectric plate 15 is sometimes called a slow wave plate or a wavelength shortening plate. By reducing the microwave propagation speed, the wavelength is shortened to reduce the propagation efficiency of the microwave radiated from the slot plate 14.
- a cooling plate 16 is arranged above (outside) the dielectric plate 15. Inside the cooling plate 16, a refrigerant passage 16a through which the refrigerant flows is provided inside the cooling plate 16, a refrigerant passage 16a through which the refrigerant flows is provided.
- a coaxial waveguide 18 for introducing microwaves is provided at the center of the upper end of the processing vessel 11, and gas is introduced to the inner wall of the processing vessel 11. Gas nozzle 22 is provided.
- a coolant channel 24 is formed outside the inner wall of the processing vessel 11 so as to surround the entire vessel.
- the plasma processing apparatus 10 shown in FIG. 1 is used to perform the plasma processing described below to cure the insulating film in a short time while maintaining a low dielectric constant.
- FIG. 3 is a cross-sectional view of an insulating film showing a process of forming an insulating film according to an embodiment of the present invention
- FIG. 4 shows a plasma process performed by a plasma substrate processing apparatus 10 with the insulating film before curing.
- FIG. 3 is a diagram illustrating a molecular structure of an insulating film.
- the substrate 1 shown in FIG. 3 (a) is prepared and, for example, by a well-known S ⁇ D system,
- a low dielectric constant insulating film material is applied on the substrate 1 to form a coating film 2.
- the applied insulating material is a low dielectric constant insulating film having a dielectric constant of, for example, 2.4 or less, such as porous MSQ (MethylSilsesqueoxane).
- porous MSQ MetalSilsesqueoxane
- one molecule of this porous membrane MSQ was terminated with a hydroxyl group bonded to Si in ⁇ _Si_ ⁇ , and the other molecule was bonded to Si in O—Si—O. It also includes a structure terminated by a hydroxyl group, in which one molecule is separated from the other molecule.
- the substrate 1 on which the coating film 2 is formed is transported into the processing space of the plasma substrate processing apparatus 10 shown in FIG. 1 by a transport device (not shown). Then, argon (Ar), hydrogen (H2), helium (He) alone, or a mixed gas of a combination thereof is introduced into the processing space of the plasma substrate processing apparatus 10, and the coaxial waveguide 18 is also filled with 2. by supplying a microwave of 45 GHz, at a temperature of 250 ° C-400 ° about C into the processing space, 0. 5 1.
- the above low electron temperature was previously measured under the same conditions using a Langmuir probe in the space between the source gas gas nozzle 22 and the silicon wafer W.
- the electron temperature was also confirmed by Langmuir probe measurements.
- FIG. 5 shows the relationship between the embodiment of the present invention and the conventional curing time with an electron beam and the dielectric constant
- FIG. 6 shows the embodiment of the present invention and the conventional curing time with an electron beam.
- the circles indicate the results of the hardening process using the conventional electron beam
- the triangles indicate the plasma processing using the plasma substrate processing apparatus 10. The results of the embodiment will be described.
- the dielectric constant when using an electron beam, is about 2.25 when the processing time is 120 seconds, and the dielectric constant is 2.3 when the processing time is further increased to 360 seconds. It is getting higher to the extent.
- the dielectric constant is approximately 2.2 when the plasma processing time is 60 seconds, and the dielectric constant changes little when the plasma processing time is 300 seconds. Just over 2.2. Even when the plasma processing time is between 60 seconds and 300 seconds, the dielectric constant is maintained at about 2.2.
- the dielectric constant can be reduced by performing the plasma processing using the plasma substrate processing apparatus 10 as compared with the curing processing using the electron beam.
- the permittivity tends to increase as the curing time increases, whereas when the plasma substrate processing apparatus 10 is used, the dielectric constant is almost the same even when the plasma processing time is long. It can be seen that the same dielectric constant can be maintained.
- the elastic modulus when the electron beam is used, when the curing time is set to 120 seconds, the elastic modulus becomes about 6 GPa, When the processing time was set to 300 seconds, the elastic modulus increased to about 8 GPa. In contrast, when the plasma substrate processing apparatus 10 is used, the elastic modulus becomes about 6.5 GPa when the plasma processing time is 60 seconds, and the elastic modulus is about 8.5 when the plasma processing time is 360 seconds. It has risen to 2GPa. When the plasma treatment time is set between 60 seconds and 300 seconds, the elastic modulus is between 6.5 GPa and 8.2 GPa. Thus, the elastic modulus In addition, when the electron beam is used and when the plasma substrate processing apparatus 10 is used, the longer the processing time, the higher the elastic modulus tends to be.
- Fig. 7 is a table showing a comparison between specific experimental results of a curing process according to another embodiment using the plasma substrate processing apparatus 10 and a conventional curing process using a furnace and an electron beam. is there. Note that Fig. 7 (a) uses the MSQ1 film, while Figs. 7 (b) and (c) use the MSQ2 film.
- the film had a dielectric constant of 2.24 and an elastic modulus of 5.
- the hardness was 9 GPa and the hardness was 0.52 GPa.
- the residual ratio of methyl groups could not be confirmed.
- the film quality was 221 dielectric constant, 7.6 GPa elastic modulus, and 0 GPa hardness. 7GPa, methyl residual rate was 0.026. As a result, the dielectric constant can be reduced in the presence of the methyl group.
- the temperature was set to 350 ° C and the processing time was set by the electron beam.
- the film had a dielectric constant of 2.31, an elastic modulus of 8.2 GPa, and a hardness of 0.75 GPa. At this time, the residual ratio of methyl groups could not be confirmed.
- the dielectric constant of the film was 2.21
- the elastic modulus was 8.6GPa
- the hardness was 0.8GPa.
- the dielectric constant shows a substantially similar value regardless of the conventional hardening process using an electron beam or the plasma process using the plasma substrate processing apparatus 10. It can be seen that the treatment with 10 can increase the elastic modulus and hardness while leaving the methyl group.
- the use of the plasma substrate processing apparatus 10 using microwaves can make the atmosphere of a low electron temperature, so that damage to the insulating film can be reduced.
- the electron temperature is high, the sheath bias voltage is high, and the energy when the electrons in the plasma are attracted to the insulating film is large, so that when the electrons collide with the insulating film, the insulating film is damaged.
- the electron temperature is low, the energy when electrons are attracted to the insulating film is small, so that damage to the insulating film when electrons collide with the insulating film can be reduced, and the residual ratio of methyl groups can be reduced.
- the dielectric constant can be reduced without lowering.
- the curing time can be set to 5 minutes or less, and more preferably to 1 to 2 minutes, 20 to 30 wafers can be processed per hour, taking the transfer time of wafer 3 into consideration. Throughput in the process can be improved.
- the present invention is useful for forming an insulating film having a low dielectric constant in a process of manufacturing various semiconductor devices.
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Abstract
Description
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US11/322,318 US20060154492A1 (en) | 2003-07-02 | 2006-01-03 | Forming method of low dielectric constant insulating film of semiconductor device, semiconductor device, and low dielectric constant insulating film forming apparatus |
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JP2003190501A JP4358563B2 (ja) | 2003-07-02 | 2003-07-02 | 半導体装置の低誘電率絶縁膜形成方法 |
JP2003-190501 | 2003-07-02 |
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PCT/JP2004/009330 WO2005004223A1 (ja) | 2003-07-02 | 2004-07-01 | 半導体装置の低誘電率絶縁膜形成方法,その方法を用いた半導体装置および低誘電率絶縁膜形成装置 |
Country Status (3)
Country | Link |
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US (1) | US20060154492A1 (ja) |
JP (1) | JP4358563B2 (ja) |
WO (1) | WO2005004223A1 (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
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US7465677B2 (en) | 2005-04-28 | 2008-12-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US7608490B2 (en) | 2005-06-02 | 2009-10-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US7785947B2 (en) | 2005-04-28 | 2010-08-31 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device comprising the step of forming nitride/oxide by high-density plasma |
US7838347B2 (en) | 2005-08-12 | 2010-11-23 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method of display device |
US8318554B2 (en) | 2005-04-28 | 2012-11-27 | Semiconductor Energy Laboratory Co., Ltd. | Method of forming gate insulating film for thin film transistors using plasma oxidation |
US8343816B2 (en) | 2005-04-25 | 2013-01-01 | Semiconductor Energy Laboratory Co., Ltd. | Organic transistor, manufacturing method of semiconductor device and organic transistor |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2006332614A (ja) * | 2005-04-25 | 2006-12-07 | Semiconductor Energy Lab Co Ltd | 半導体装置、有機トランジスタ及びその作製方法 |
US7410839B2 (en) | 2005-04-28 | 2008-08-12 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor and manufacturing method thereof |
JPWO2007080944A1 (ja) * | 2006-01-13 | 2009-06-11 | 東京エレクトロン株式会社 | 多孔質膜の成膜方法およびコンピュータ可読記録媒体 |
KR20080062744A (ko) * | 2006-12-29 | 2008-07-03 | 주식회사 하이닉스반도체 | 반도체 소자의 소자분리막 형성방법 |
US11508573B2 (en) | 2019-12-31 | 2022-11-22 | Micron Technology, Inc. | Plasma doping of gap fill materials |
KR102508464B1 (ko) * | 2021-04-01 | 2023-03-09 | 주식회사 코비스테크놀로지 | 질량 측정 장치 |
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JP2002280369A (ja) * | 2001-03-19 | 2002-09-27 | Canon Sales Co Inc | シリコン基板の酸化膜形成装置及び酸化膜形成方法 |
JP2002329782A (ja) * | 2001-05-01 | 2002-11-15 | Tokyo Ohka Kogyo Co Ltd | 被膜の処理方法およびこの方法を用いた半導体素子の製造方法 |
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US6861356B2 (en) * | 1997-11-05 | 2005-03-01 | Tokyo Electron Limited | Method of forming a barrier film and method of forming wiring structure and electrodes of semiconductor device having a barrier film |
US6576300B1 (en) * | 2000-03-20 | 2003-06-10 | Dow Corning Corporation | High modulus, low dielectric constant coatings |
US6759098B2 (en) * | 2000-03-20 | 2004-07-06 | Axcelis Technologies, Inc. | Plasma curing of MSQ-based porous low-k film materials |
CN100585814C (zh) * | 2001-01-25 | 2010-01-27 | 东京毅力科创株式会社 | 等离子体处理方法 |
US6838300B2 (en) * | 2003-02-04 | 2005-01-04 | Texas Instruments Incorporated | Chemical treatment of low-k dielectric films |
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- 2003-07-02 JP JP2003190501A patent/JP4358563B2/ja not_active Expired - Fee Related
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2004
- 2004-07-01 WO PCT/JP2004/009330 patent/WO2005004223A1/ja active Application Filing
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2006
- 2006-01-03 US US11/322,318 patent/US20060154492A1/en not_active Abandoned
Patent Citations (3)
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JP2002280369A (ja) * | 2001-03-19 | 2002-09-27 | Canon Sales Co Inc | シリコン基板の酸化膜形成装置及び酸化膜形成方法 |
JP2002329782A (ja) * | 2001-05-01 | 2002-11-15 | Tokyo Ohka Kogyo Co Ltd | 被膜の処理方法およびこの方法を用いた半導体素子の製造方法 |
JP2003068850A (ja) * | 2001-08-29 | 2003-03-07 | Tokyo Electron Ltd | 半導体装置およびその製造方法 |
Cited By (9)
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US8343816B2 (en) | 2005-04-25 | 2013-01-01 | Semiconductor Energy Laboratory Co., Ltd. | Organic transistor, manufacturing method of semiconductor device and organic transistor |
US8785259B2 (en) | 2005-04-25 | 2014-07-22 | Semiconductor Energy Laboratory Co., Ltd. | Organic transistor, manufacturing method of semiconductor device and organic transistor |
US7465677B2 (en) | 2005-04-28 | 2008-12-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US7718547B2 (en) | 2005-04-28 | 2010-05-18 | Semiconductor Energy Laboratory Co., Ltd | Semiconductor device and method for manufacturing the same |
US7785947B2 (en) | 2005-04-28 | 2010-08-31 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device comprising the step of forming nitride/oxide by high-density plasma |
US8318554B2 (en) | 2005-04-28 | 2012-11-27 | Semiconductor Energy Laboratory Co., Ltd. | Method of forming gate insulating film for thin film transistors using plasma oxidation |
US7608490B2 (en) | 2005-06-02 | 2009-10-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US7838347B2 (en) | 2005-08-12 | 2010-11-23 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method of display device |
US8674366B2 (en) | 2005-08-12 | 2014-03-18 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method of display device |
Also Published As
Publication number | Publication date |
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US20060154492A1 (en) | 2006-07-13 |
JP2005026468A (ja) | 2005-01-27 |
JP4358563B2 (ja) | 2009-11-04 |
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