WO2004079753A3 - Reflektives optisches element und euv-lithographiegerät - Google Patents

Reflektives optisches element und euv-lithographiegerät Download PDF

Info

Publication number
WO2004079753A3
WO2004079753A3 PCT/EP2004/002014 EP2004002014W WO2004079753A3 WO 2004079753 A3 WO2004079753 A3 WO 2004079753A3 EP 2004002014 W EP2004002014 W EP 2004002014W WO 2004079753 A3 WO2004079753 A3 WO 2004079753A3
Authority
WO
WIPO (PCT)
Prior art keywords
optical element
protective layer
reflective optical
layer system
euv lithography
Prior art date
Application number
PCT/EP2004/002014
Other languages
English (en)
French (fr)
Other versions
WO2004079753A2 (de
Inventor
Johann Trenkler
Hans-Juergen Mann
Udo Nothelfer
Original Assignee
Zeiss Carl Smt Ag
Johann Trenkler
Hans-Juergen Mann
Udo Nothelfer
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zeiss Carl Smt Ag, Johann Trenkler, Hans-Juergen Mann, Udo Nothelfer filed Critical Zeiss Carl Smt Ag
Priority to DE112004000320.2T priority Critical patent/DE112004000320B4/de
Priority to JP2006504489A priority patent/JP4927529B2/ja
Publication of WO2004079753A2 publication Critical patent/WO2004079753A2/de
Publication of WO2004079753A3 publication Critical patent/WO2004079753A3/de
Priority to US11/216,560 priority patent/US20060066940A1/en
Priority to US12/399,775 priority patent/US7952797B2/en
Priority to US13/118,028 priority patent/US8243364B2/en
Priority to US13/530,192 priority patent/US8537460B2/en
Priority to US13/939,346 priority patent/US8891163B2/en
Priority to US14/529,515 priority patent/US9910193B2/en
Priority to US15/893,902 priority patent/US20180224585A1/en

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/08—Mirrors
    • G02B5/0891—Ultraviolet [UV] mirrors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/08—Mirrors
    • G02B5/0816—Multilayer mirrors, i.e. having two or more reflecting layers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/08—Mirrors
    • G02B5/0816—Multilayer mirrors, i.e. having two or more reflecting layers
    • G02B5/085—Multilayer mirrors, i.e. having two or more reflecting layers at least one of the reflecting layers comprising metal
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • G21K1/062—Devices having a multilayer structure

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Public Health (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Nanotechnology (AREA)
  • Optics & Photonics (AREA)
  • Theoretical Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Optical Elements Other Than Lenses (AREA)

Abstract

Es wird ein reflektives optisches Element sowie ein ein solches enthaltendes EUV-Lithographiegerät vorgeschlagen, das eine geringe Neigung zu Kontaminationen zeigt. Erfindungsgemäss weist das reflektive optische Element ein Deckschichtsystem aus einer oder mehreren Schichten auf. Die optischen Eigenschaften des Deckschichtsystems liegen zwischen denen eines Spacers und eines Absorbers bzw. entsprechen denen eines Spacers. Die Wahl eines Materials mit einem möglichst kleinen Imaginärteil und einem Realteil möglichst nahe 1 beim Brechungsindex führt in Abhängigkeit von der Deckschichtsystemdicke zwischen zwei Dicken di und d2 zu einem plateauförmigen Reflektivitätsverlauf. Die Dicke des Deckschichtsystems wird kleiner d2 gewählt.
PCT/EP2004/002014 2003-03-03 2004-03-01 Reflektives optisches element und euv-lithographiegerät WO2004079753A2 (de)

Priority Applications (9)

Application Number Priority Date Filing Date Title
DE112004000320.2T DE112004000320B4 (de) 2003-03-03 2004-03-01 Reflektives optisches Element und EUV-Lithographiegerät
JP2006504489A JP4927529B2 (ja) 2003-03-03 2004-03-01 反射性光学要素およびｅｕｖリソグラフィー装置
US11/216,560 US20060066940A1 (en) 2003-03-03 2005-08-31 Reflective optical element and EUV lithography appliance
US12/399,775 US7952797B2 (en) 2003-03-03 2009-03-06 Reflective optical element and EUV lithography appliance
US13/118,028 US8243364B2 (en) 2003-03-03 2011-05-27 Reflective optical element and EUV lithography appliance
US13/530,192 US8537460B2 (en) 2003-03-03 2012-06-22 Reflective optical element and EUV lithography appliance
US13/939,346 US8891163B2 (en) 2003-03-03 2013-07-11 Reflective optical element and EUV lithography appliance
US14/529,515 US9910193B2 (en) 2003-03-03 2014-10-31 Reflective optical element and EUV lithography appliance
US15/893,902 US20180224585A1 (en) 2003-03-03 2018-02-12 Reflective optical element and euv lithography appliance

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10309084.3 2003-03-03
DE10309084A DE10309084A1 (de) 2003-03-03 2003-03-03 Reflektives optisches Element und EUV-Lithographiegerät

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US11/216,560 Continuation-In-Part US20060066940A1 (en) 2003-03-03 2005-08-31 Reflective optical element and EUV lithography appliance

Publications (2)

Publication Number Publication Date
WO2004079753A2 WO2004079753A2 (de) 2004-09-16
WO2004079753A3 true WO2004079753A3 (de) 2005-04-14

Family

ID=32864042

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2004/002014 WO2004079753A2 (de) 2003-03-03 2004-03-01 Reflektives optisches element und euv-lithographiegerät

Country Status (4)

Country Link
US (7) US20060066940A1 (de)
JP (1) JP4927529B2 (de)
DE (2) DE10309084A1 (de)
WO (1) WO2004079753A2 (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10309084A1 (de) 2003-03-03 2004-09-16 Carl Zeiss Smt Ag Reflektives optisches Element und EUV-Lithographiegerät
DE10319005A1 (de) 2003-04-25 2004-11-25 Carl Zeiss Smt Ag Reflektives optisches Element, optisches System und EUV-Lithographievorrichtung
JP4613499B2 (ja) * 2004-03-04 2011-01-19 凸版印刷株式会社 極限紫外線露光用マスク、ブランク、およびマスクの製造方法、並びにパターン転写方法
US7701554B2 (en) * 2004-12-29 2010-04-20 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method, and optical component
JPWO2008090988A1 (ja) * 2007-01-25 2010-05-20 株式会社ニコン 光学素子、これを用いた露光装置、及びデバイス製造方法
EP1965229A3 (de) * 2007-02-28 2008-12-10 Corning Incorporated Manipulierte fluoridbeschichtete Elemente für Lasersysteme
US20080266651A1 (en) * 2007-04-24 2008-10-30 Katsuhiko Murakami Optical apparatus, multilayer-film reflective mirror, exposure apparatus, and device
WO2009043374A1 (en) * 2007-10-02 2009-04-09 Consiglio Nazionale Delle Ricerche - Infm Istituto Nazionale Per La Fisica Della Materia Aperiodic multilayer structures
ATE512389T1 (de) 2007-10-23 2011-06-15 Imec Erkennung von kontaminationen in euv-systemen
DE102008002403A1 (de) 2008-06-12 2009-12-17 Carl Zeiss Smt Ag Verfahren zum Herstellen einer Mehrlagen-Beschichtung, optisches Element und optische Anordnung
DE102011083462A1 (de) 2011-09-27 2013-03-28 Carl Zeiss Smt Gmbh EUV-Spiegel mit einer Oxynitrid-Deckschicht mit stabiler Zusammensetzung
DE102011083461A1 (de) 2011-09-27 2013-03-28 Carl Zeiss Smt Gmbh Verfahren zum Erzeugen einer Deckschicht aus Siliziumoxid an einem EUV-Spiegel
DE102012202850A1 (de) 2012-02-24 2013-08-29 Asml Netherlands B.V. Verfahren zum Optimieren eines Schutzlagensystems für ein optisches Element, optisches Element und optisches System für die EUV-Lithographie
DE102012207125A1 (de) 2012-04-27 2013-03-28 Carl Zeiss Smt Gmbh Optisches Element und optisches System für die EUV-Lithographie sowie Verfahren zum Optimieren eines Schutzlagensystems für ein optisches Element
US10185234B2 (en) * 2012-10-04 2019-01-22 Asml Netherlands B.V. Harsh environment optical element protection
DE102012222466A1 (de) * 2012-12-06 2014-06-12 Carl Zeiss Smt Gmbh Reflektives optisches Element für die EUV-Lithographie
DE102013102670A1 (de) * 2013-03-15 2014-10-02 Asml Netherlands B.V. Optisches Element und optisches System für die EUV-Lithographie sowie Verfahren zur Behandlung eines solchen optischen Elements
JP2017535821A (ja) 2014-11-27 2017-11-30 カール・ツァイス・エスエムティー・ゲーエムベーハー 複数の個々に制御可能な書込ヘッドを含むリソグラフィ装置
US9791771B2 (en) 2016-02-11 2017-10-17 Globalfoundries Inc. Photomask structure with an etch stop layer that enables repairs of detected defects therein and extreme ultraviolet(EUV) photolithograpy methods using the photomask structure
DE102016103339A1 (de) * 2016-02-25 2017-08-31 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Optische Beschichtung und Verfahren zur Herstellung einer optischen Beschichtung mit verminderter Lichtstreuung
CN114127633A (zh) * 2019-07-16 2022-03-01 Asml荷兰有限公司 用于光学元件的耐氧损失顶部涂层
DE102019212910A1 (de) * 2019-08-28 2021-03-04 Carl Zeiss Smt Gmbh Optisches Element und EUV-Lithographiesystem
JP2021071543A (ja) * 2019-10-29 2021-05-06 ギガフォトン株式会社 極端紫外光集光ミラー、極端紫外光生成装置、及び電子デバイスの製造方法
WO2024027999A1 (en) * 2022-07-30 2024-02-08 Asml Netherlands B.V. Reflective member for euv lithography

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1186957A2 (de) * 2000-09-04 2002-03-13 Asm Lithography B.V. Lithographischer Projektionsapparat

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4958363A (en) * 1986-08-15 1990-09-18 Nelson Robert S Apparatus for narrow bandwidth and multiple energy x-ray imaging
JPH0219850A (ja) 1988-07-07 1990-01-23 Nippon Telegr & Teleph Corp <Ntt> パタン形成法
US5521031A (en) 1994-10-20 1996-05-28 At&T Corp. Pattern delineating apparatus for use in the EUV spectrum
WO1997033203A1 (en) 1996-03-07 1997-09-12 Philips Electronics N.V. Imaging system and apparatus for ultraviolet lithography
US5958605A (en) 1997-11-10 1999-09-28 Regents Of The University Of California Passivating overcoat bilayer for multilayer reflective coatings for extreme ultraviolet lithography
US6042995A (en) 1997-12-09 2000-03-28 Lucent Technologies Inc. Lithographic process for device fabrication using a multilayer mask which has been previously inspected
US6157486A (en) * 1998-01-13 2000-12-05 3M Innovative Properties Company Retroreflective dichroic reflector
JP4489895B2 (ja) * 2000-02-24 2010-06-23 本田技研工業株式会社 オープンエンドレンチの使用方法
US6228512B1 (en) * 1999-05-26 2001-05-08 The Regents Of The University Of California MoRu/Be multilayers for extreme ultraviolet applications
TW561279B (en) * 1999-07-02 2003-11-11 Asml Netherlands Bv Reflector for reflecting radiation in a desired wavelength range, lithographic projection apparatus containing the same and method for their preparation
JP3609962B2 (ja) * 1999-08-27 2005-01-12 株式会社日本製鋼所 射出成形機のホッパ下冷却方法
JP2001277810A (ja) * 2000-04-03 2001-10-10 Taiyo Seiki Kogyo Kk トレーラー用台車
JP3998396B2 (ja) * 2000-04-04 2007-10-24 カヤバ工業株式会社 キャスター
TW556296B (en) * 2000-12-27 2003-10-01 Koninkl Philips Electronics Nv Method of measuring alignment of a substrate with respect to a reference alignment mark
EP1260861A1 (de) 2001-05-21 2002-11-27 ASML Netherlands B.V. Methode zur Herstellung eines Reflektors, Reflektor und Phasenverschiebungsmaske sowie Lithographiegerät
US20030064161A1 (en) * 2001-06-06 2003-04-03 Malinowski Michael E. Method for reducing carbon contamination of multilayer mirrors
DE10150874A1 (de) 2001-10-04 2003-04-30 Zeiss Carl Optisches Element und Verfahren zu dessen Herstellung sowie ein Lithographiegerät und ein Verfahren zur Herstellung eines Halbleiterbauelements
US6643353B2 (en) * 2002-01-10 2003-11-04 Osmic, Inc. Protective layer for multilayers exposed to x-rays
DE10209493B4 (de) * 2002-03-07 2007-03-22 Carl Zeiss Smt Ag Verfahren zur Vermeidung von Kontamination auf optischen Elementen, Vorrichtung zur Regelung von Kontamination auf optischen Elementen und EUV-Lithographievorrichtung
EP1348984A1 (de) 2002-03-27 2003-10-01 Carl Zeiss Semiconductor Manufacturing Technologies Ag Optisches Breitbandelement und Verfahren zur dessen Herstellung
US6759141B2 (en) * 2002-04-30 2004-07-06 The Regents Of The University Of California Oxidation preventative capping layer for deep-ultra-violet and soft x-ray multilayers
US20040011381A1 (en) 2002-07-17 2004-01-22 Klebanoff Leonard E. Method for removing carbon contamination from optic surfaces
DE10258709A1 (de) 2002-12-12 2004-07-01 Carl Zeiss Smt Ag Schutzsystem für reflektive optische Elemente, reflektives optisches Element und Verfahren zu deren Herstellung
DE10309084A1 (de) * 2003-03-03 2004-09-16 Carl Zeiss Smt Ag Reflektives optisches Element und EUV-Lithographiegerät
DE10319005A1 (de) * 2003-04-25 2004-11-25 Carl Zeiss Smt Ag Reflektives optisches Element, optisches System und EUV-Lithographievorrichtung
DE10321103A1 (de) 2003-05-09 2004-12-02 Carl Zeiss Smt Ag Verfahren zur Vermeidung von Kontamination und EUV-Lithographievorrichtung
JP4095566B2 (ja) * 2003-09-05 2008-06-04 キヤノン株式会社 光学素子を評価する方法
US7336416B2 (en) 2005-04-27 2008-02-26 Asml Netherlands B.V. Spectral purity filter for multi-layer mirror, lithographic apparatus including such multi-layer mirror, method for enlarging the ratio of desired radiation and undesired radiation, and device manufacturing method
US7948675B2 (en) * 2005-10-11 2011-05-24 Nikon Corporation Surface-corrected multilayer-film mirrors with protected reflective surfaces, exposure systems comprising same, and associated methods
JPWO2008090988A1 (ja) 2007-01-25 2010-05-20 株式会社ニコン 光学素子、これを用いた露光装置、及びデバイス製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1186957A2 (de) * 2000-09-04 2002-03-13 Asm Lithography B.V. Lithographischer Projektionsapparat

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
MALINOWSKI M E ET AL: "Controlling contamination in Mo/Si multilayer mirrors by Si surface-capping modifications", PROCEEDINGS OF THE SPIE - THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING SPIE-INT. SOC. OPT. ENG USA, vol. 4688, 2002, pages 442 - 453, XP008042287, ISSN: 0277-786X *
SINGH M ET AL: "Capping layers for extreme-ultraviolet multilayer interference coatings", OPTICS LETTERS, OPTICAL SOCIETY OF AMERICA, WASHINGTON, US, vol. 26, no. 5, 1 March 2001 (2001-03-01), pages 259 - 261, XP002219427, ISSN: 0146-9592 *

Also Published As

Publication number Publication date
DE112004000320A5 (de) 2007-12-06
US20110228237A1 (en) 2011-09-22
US20150055111A1 (en) 2015-02-26
US8891163B2 (en) 2014-11-18
US20180224585A1 (en) 2018-08-09
US8537460B2 (en) 2013-09-17
WO2004079753A2 (de) 2004-09-16
US7952797B2 (en) 2011-05-31
JP2006519386A (ja) 2006-08-24
US8243364B2 (en) 2012-08-14
DE10309084A1 (de) 2004-09-16
DE112004000320B4 (de) 2016-11-03
US20060066940A1 (en) 2006-03-30
US20130301023A1 (en) 2013-11-14
US9910193B2 (en) 2018-03-06
JP4927529B2 (ja) 2012-05-09
US20120293779A1 (en) 2012-11-22
US20090251772A1 (en) 2009-10-08

Similar Documents

Publication Publication Date Title
WO2004079753A3 (de) Reflektives optisches element und euv-lithographiegerät
WO2006065737A3 (en) Holographic optical elements, devices and methods
WO1995022083A3 (en) Photomask blanks
PT2267491E (pt) Substrato transparente comportando um revestimento anti-reflexo
PL1893416T5 (pl) Dokument zabezpieczony
EP1452309A4 (de) Polyesterklebefolie zur optischen verwendung
DE60041563D1 (de) Gegen Anlaufen beständiges durchsichtiges Beschichtungssystem
TW200621840A (en) Modified copolyesters and optical films including modified copolyesters
TW200602711A (en) Birefringent optical system
AU2003301830A1 (en) An infra-red reflecting layered structure
AU2002323913A1 (en) Radiation sensitive refractive index changing composition and refractive index changing method
DE69634441D1 (de) Optische zwischenstelle mit sicherheitsabschaltung
SA112330915B1 (ar) مادة مغلفة بتغليف منخفض الإنبعاثية – e له طبقة ماصة فوق طبقة وظيفية مصممة لزيادة الانعكاس الخارجي
NL1017631A1 (nl) Bescherming tegen kopiÙren van optische schijven.
WO2008020450A3 (en) Diffractive optical relay and method for manufacturing the same
WO2003034408A3 (en) System and method for controlled copying and moving of contents
EP0962807A3 (de) Mehrschichtiger optischer Film
ATE350676T1 (de) Infrarot reflektierendes material
WO2007138504A3 (en) Mirror feedback upon physical object selection
GB2405202A (en) Fiber optic sensor package
AU2002301541A1 (en) Optical element having antireflection film
EP1300374A4 (de) Photokatalytisches element
ATE458207T1 (de) Linse mit veränderbarer brennweite
EP2657768A3 (de) Optisch semitransmissiver Film, Photomaskenrohling und Photomaske, und Verfahren zum Entwurf eines optisch semitransmissiven Films
WO2004094326A3 (en) Optical elements and methods of making optical elements

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): BW GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 11216560

Country of ref document: US

WWE Wipo information: entry into national phase

Ref document number: 2006504489

Country of ref document: JP

WWP Wipo information: published in national office

Ref document number: 11216560

Country of ref document: US

122 Ep: pct application non-entry in european phase
REF Corresponds to

Ref document number: 112004000320

Country of ref document: DE

Date of ref document: 20071206

Kind code of ref document: P