WO2004073052A1 - 露光装置及び露光装置用光学部材 - Google Patents
露光装置及び露光装置用光学部材 Download PDFInfo
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- WO2004073052A1 WO2004073052A1 PCT/JP2004/001630 JP2004001630W WO2004073052A1 WO 2004073052 A1 WO2004073052 A1 WO 2004073052A1 JP 2004001630 W JP2004001630 W JP 2004001630W WO 2004073052 A1 WO2004073052 A1 WO 2004073052A1
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- quartz glass
- pulse
- synthetic quartz
- light
- exposure apparatus
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70041—Production of exposure light, i.e. light sources by pulsed sources, e.g. multiplexing, pulse duration, interval control or intensity control
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70591—Testing optical components
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70941—Stray fields and charges, e.g. stray light, scattered light, flare, transmission loss
Definitions
- Exposure equipment and optical members for exposure equipment are exposed equipment and optical members for exposure equipment
- the present invention relates to an optical member such as a lens and a mirror used in a specific wavelength band of 300 nm or less in an excimer laser lithography technique, and an exposure apparatus using the same.
- the projection optical system used in this device is required to have a large exposure area and a high resolution over the entire exposure area with the increase in integration of integrated circuits.
- NA numerical aperture
- a KrF (248 nm) excimer laser is mainly used as the light source of the exposure apparatus, and the wavelength of the ArF excimer laser, which is a deep ultraviolet ray, is being shortened with the aim of achieving higher resolution. ing.
- the first is a decrease in internal transmittance due to the generation of internal defects (see Japanese Patent Application Laid-Open No. 8-259925), and the second is a change in refractive index due to a change in volume such as compaction and etaspansion.
- the third is a change in the surface state such as rupture or contamination of the optical thin film (see Japanese Patent Application Laid-Open No. 2000-142022). Kaihei 1 1—5 2 102 2).
- This micro-channel phenomenon occurs due to continuous irradiation for a very long time even under a low energy density in the practical range under the normal use conditions of the exposure apparatus, so measures must be taken to prevent mechanical damage due to this phenomenon.
- an object of the present invention is to provide an optical member and an exposure apparatus that can suppress the generation of microchannels.
- an object of the present invention is to provide an optical member and an exposure apparatus that can suppress the generation of microchannels.
- the present inventors irradiate pulsed KrF and ArF excimer laser light to various optical members made of synthetic quartz glass, quartz single crystal, calcium fluoride single crystal, etc., to actually generate microchannels. Therefore, the conditions of occurrence were examined.
- the cause of the microchannel was self-condensation due to the change in the refractive index, which is a characteristic phenomenon of synthetic quartz. That is, when the synthetic quartz glass is irradiated with the laser light, a change in the refractive index accompanied by compaction occurs. As this irradiation is repeated, a small amount of change in the refractive index is accumulated, and remains in the optical member as a large refractive index distribution. As a result, the light is bent to a higher refractive index, and the irradiated light is gradually self-collected near the back surface of the optical member. Finally, near the back surface, the energy density of the irradiated light becomes strong enough to exceed the breakdown threshold of the optical member.
- Fig. 1 is a graph showing the relationship between the energy density I per pulse and the number N of microchannel pulses generated when a synthetic quartz glass sample is irradiated with excimer laser light.
- Samples used for the irradiation experiment 1100P a 0H group P m, 2 X 10 18 cells ZCM 3 synthetic quartz glass containing hydrogen molecules, cut to the size of the diameter 30Mtn, thickness LOram, surface diameter 30 ⁇ Was prepared by optical polishing on both sides.
- a 5 mm diameter KrF excimer laser beam or ArF excimer laser beam regulated by an aperture was directly irradiated onto the sample from a light source without passing through optical components such as a lens and a homogenizer.
- the energy density per pulse of the laser beam was adjusted by changing the discharge voltage, and the value was measured by arranging a gauge at the sample position.
- the sample was placed inside an aluminum box and the atmosphere in the box was replaced with dry nitrogen gas.
- the laser beam was irradiated with a predetermined pulse of laser light while fixing the energy density of the laser beam.
- the pulse width ⁇ of the laser beam is 20 ns for both KrF and ArF excimer lasers.
- the presence or absence of the microchannel was confirmed visually by illuminating the sample with light from a condensing lamp.
- FIG. 1 a straight line. Is a KrF excimer laser beam, straight line A. Shows the correlation for ArF excimer laser light. These lines are the microchannel generation threshold Represents a straight line K 1 C) ,. Microchannels did not occur in the region on the left.
- the microchannel is related to the refractive index change ⁇ n of the synthetic quartz glass.
- ⁇ is 20 ppm for KrF excimer laser light and 2 ppm for ArF excimer laser light, the microchannel becomes Occurred.
- the microchannel generation threshold was considered to be correlated with the sample thickness, so the following experiment was performed to investigate the dependence.
- Synthetic quartz glass containing 1100 ppm of 0H groups and 2 x 10 18 hydrogen molecules (Zcm 3 ) was changed to 15 x 15 square and thickness within the range of 30 mm to 100 mm, and multiple rectangular parallelepipeds were cut out and 15 x 15 m
- the m-side surface was optically polished on both sides to obtain a sample.
- the sample was irradiated with ArF excimer laser light at an energy density of 20 mJ ⁇ cm- 2 pulse- 1 to determine the microchannel generation threshold. The result is shown in figure 2.
- microchannels are more likely to be generated as the optical members are thicker, and that the number of pulses N generated by the microchannels is inversely proportional to the thickness L of the 1.7th power. .
- ⁇ due to compaction is inversely proportional to the pulse width (see Applied Optics, 1999, Vol. 38, ⁇ ⁇ 5785-5788). (cm), energy density per pulse of the irradiated pulse light I (mj ⁇ cm " 2 ⁇ pulse” 1 ), pulse width of the pulse light (ns), and number of generated pulses in the microphone opening channel N (pulse) Succeeded in deriving an expression that expresses the correlation with. You That is, about KrF laser light,
- N 4 X 10 8 X and I -2 L -L 7
- optical members used for pulsed light with a wavelength of 300 nm or less including KrF laser light for optical members used for pulsed light with a wavelength of 300 nm or less including KrF laser light,
- optical members used for pulsed light having a wavelength of 200 nm or less including ArF laser light having a wavelength of 200 nm or less including ArF laser light
- the present invention provides the following exposure apparatus as means for suppressing the generation of micro channels.
- An exposure apparatus having a light source that emits pulsed light having a wavelength of 300 nm or less, and exposing an object to be exposed by transmitting the pulsed light through a plurality of optical members to irradiate the object. At least one of them is a synthetic quartz glass member, and the thickness of the synthetic quartz glass member and the pulsed light intensity applied to the synthetic quartz glass member.
- An exposure apparatus characterized in that the energy density per pulse and the pulse width of the pulse light satisfy the following expression (1).
- L is the thickness (unit: cm) of the synthetic quartz glass member
- I is the energy density per pulse of the pulse light applied to the synthetic quartz glass member (unit: tnjjcm— 2.
- pulse— and ⁇ indicate the pulse width (unit: ns) of the pulse light.
- the wavelength of the pulse light is 200 nm or less, the thickness of the synthetic quartz glass member, and the laser beam irradiated on the synthetic quartz glass member.
- L is the thickness (unit: cm) of the synthetic quartz glass member
- I is the energy density per pulse of the pulse light applied to the synthetic quartz glass member (unit: mj • cm— 2 ⁇ pul se— and ⁇ indicate the pulse width (unit: ns) of the pulsed light.
- the present inventors have continued to study the correlation between the composition and various physical properties of the optical member and the microchannel phenomenon, and have made the following invention as a means for suppressing the generation of microchannels.
- An exposure apparatus comprising: a light source that emits pulsed light having a wavelength of 300 mn or less, and exposing an object to be exposed by transmitting the pulsed light through a plurality of optical members and irradiating the plurality of optical members.
- the energy density per pulse is lmj ⁇ cm ” 2 -pu lse—The member irradiated with one or more pulsed lights is at least selected from the group consisting of quartz single crystal, aluminum oxide single crystal, calcium fluoride single crystal, magnesium fluoride single crystal, and anhydrous fluorine doped quartz glass.
- An exposure apparatus comprising one type.
- the energy density per pulse is 30mJ ⁇ cm- 2 ⁇ pulse- 1 of the ArF excimer laser beam 1 X 1 0 7 pulse irradiation refractive index variation to be measured at a wavelength of 633nm when the exposure apparatus, characterized in that at most 3 P pm.
- An exposure apparatus that has a light source that emits ultraviolet light having a wavelength of 300 nm or less, and that exposes an object to be exposed by irradiating the ultraviolet light through a plurality of optical members. At least one is a synthetic quartz glass member, and the striae of the optical member arranged on the light source side of the synthetic glass member is determined by the evaluation based on the Japan Optical Glass Industry Association Standard (J0GIS) 11-1975.
- An exposure apparatus characterized by being a class 3 or class 3.
- the light source emits ultraviolet pulsed light having a wavelength of 300 nm or less
- at least one of the plurality of optical members is a synthetic quartz glass member, and is disposed closer to the light source than the synthetic quartz glass member.
- the exposure apparatus according to ⁇ 1>, wherein the striae of the optical member is a first to third grade in an evaluation based on the Japan Optical Glass Industry Standard (J0GIS) 11-1975.
- An exposure apparatus having a light source that emits ultraviolet light having a wavelength of 300 M1 or less, and exposing an object to be exposed by transmitting the ultraviolet light through a plurality of optical members to irradiate the object. At least one of which is a synthetic quartz glass member, and has a size force S1 ⁇ m or less of foreign matter and bubbles contained in an optical member disposed closer to the light source than the synthetic quartz glass member; .
- the light source emits ultraviolet pulsed light having a wavelength of 300 nm or less, and at least one of the plurality of optical members is a synthetic quartz glass member.
- the present inventors also studied the relationship between the pulse light beam quality and the microchannel, and obtained the following findings.
- Figure 3 shows a schematic diagram of a differential interference microscope image of the microchannel on the back surface of the sample.
- the symbol * in the figure indicates a microchannel, and the symbol m indicates three linearly extending grooves. Each groove m was formed substantially parallel, and the interval between them was about 0.1 lrnm.
- the microchannel was generated near the boundary between the irradiated part and the non-irradiated part, and was generated along the groove m with an interval of about 0.1 mm.
- the energy density of the layered structure of about 0.1 mm was uneven, and there was a locally high energy density part.
- the unevenness of the energy density was measured, the difference between the top and the bottom of the unevenness was about 5% of the average energy density.
- the grooves m at intervals of 0.1 mm on the back surface of the sample are based on the uneven energy density of the excimer laser light, and microchannels are generated along the grooves m. This can be presumed to be due to the fact that, as shown in Fig. 3, there is a very fine and sharp energy density uneven structure, which may have enhanced the generation of microchannels.
- the location where the microchannel is generated is a location where the energy density is high.
- the laser beam with a non-uniform energy density was generated even inside the member.
- An exposure apparatus comprising: a light source that emits ultraviolet light having a wavelength of 300 nm or less, and exposing an object to be exposed by irradiating the ultraviolet light through a plurality of optical members. At least one is a synthetic quartz glass member, and the ultraviolet light applied to the synthetic quartz glass member has a width between adjacent peaks of uneven energy density in a plane perpendicular to the optical axis larger than 0.Iran, and An exposure apparatus, wherein a difference between a top and a bottom of the energy density is 5% or less of an average energy density.
- the light source emits ultraviolet pulsed light having a wavelength of 300 nm or less
- at least one of the plurality of optical members is a synthetic quartz glass member
- the ultraviolet light applied to the synthetic quartz glass member is Is that the width between adjacent tops of the energy density unevenness in a plane perpendicular to the optical axis is wider than 0.1 nm, and the difference between the energy density top and bottom is 5% or less of the average energy density.
- a light source that emits ultraviolet light having a wavelength of 300 nm or less, and a homogenizer that reduces uneven energy density in a plane perpendicular to the optical axis of the ultraviolet light, and irradiates the ultraviolet light by transmitting the light through a plurality of optical members.
- An exposure apparatus for exposing an object to be exposed wherein at least one of the plurality of optical members is a synthetic quartz glass member, and the synthetic quartz glass member and all of the members are arranged closest to a light source.
- An exposure apparatus wherein the exposure apparatus is disposed closer to an object to be exposed than a homogenizer.
- the light source emits ultraviolet pulsed light having a wavelength of 300 nm or less, and further includes a homogenizer that reduces uneven energy density in a plane perpendicular to the optical axis of the ultraviolet light.
- At least one of the optical members is a synthetic quartz glass member, and all of the synthetic quartz glass members are arranged closer to the object to be exposed than the homogenizer arranged closest to the light source.
- Optical system of an exposure system that exposes an object to be exposed with pulsed light with a wavelength of 300 nm or less.
- the thickness of the synthetic quartz glass member, the energy density per pulse of the pulse light applied to the synthetic quartz glass member, and the pulse width of the pulse light are:
- a synthetic quartz glass member for an exposure apparatus characterized by satisfying the following expression (3).
- L is the thickness of the synthetic quartz glass member (unit: cm)
- I is the energy density per pulse of the pulse light applied to the synthetic quartz glass member (unit: mj • cm ”) 2 ⁇ pulse -1 )
- ⁇ indicates the pulse width (unit: ns) of the pulse light.
- the wavelength of the pulse light is 200 nm or less, the thickness of the synthetic quartz glass member, and the pulse of the pulse light applied to the synthetic quartz glass member.
- L is the thickness (unit: cm) of the synthetic quartz glass member
- I is the energy density per pulse of the pulse light applied to the synthetic quartz glass member (unit: rajjcm— 2.
- pulse -1 ⁇ indicates the pulse width (unit: ns) of the pulse light.
- ⁇ 13> An exposure method for projecting and exposing an image of a pattern provided on an original onto a substrate having a photosensitive material, wherein ⁇ 1> to ⁇ 10>, ⁇ 7-1>, and ⁇ 8-1. >, ⁇ 9_1>, and ⁇ 10-1>.
- the thickness of the synthetic quartz glass member, the pulse width of the pulse light applied to the synthetic quartz glass member, and the energy density per pulse Is defined as a specific function, it is possible to suppress the occurrence of microchannels on the surface of the synthetic quartz glass member on the side of the object to be exposed at the time of ultraviolet irradiation. Therefore, when exposing the object to be exposed, mechanical damage to the synthetic quartz glass member Can be prevented and the life of the exposure apparatus can be improved.
- the synthetic quartz glass member described in ⁇ 1> or ⁇ 2> is more than half of all synthetic quartz glass members, The life of the exposure apparatus can be improved.
- a plurality of optical members irradiated with ultraviolet light having an energy density of a predetermined amount or more can be converted into a single crystal or anhydrous fluorine-doped quartz glass capable of suppressing generation of microchannels.
- the formation of microchannels can suppress the generation of microchannels and extend the life of the exposure apparatus.
- a plurality of optical members irradiated with ultraviolet rays having an energy density equal to or more than a predetermined amount are irradiated with an energy density per pulse of 30 mJ ⁇ cm- 2 and pulse- 1 .
- the refractive index variation to be measured at a wavelength of 633 nm when the ArF excimer laser beam was IX 10 7 pulse irradiation is formed in the anhydrous fluorine-doped quartz glass is 3ppm or less, it is possible to suppress the generation of micro-channels, an exposure device The life of the battery can be improved.
- the stria of the optical member disposed closer to the light source than the synthetic quartz glass member can be inspected according to the Japan Optical Glass Industry Association standard (J0GIS).
- J0GIS Japan Optical Glass Industry Association standard
- the range of 1st to 3rd grade was set, so when pulsed light passes through the synthetic quartz glass member, the striae of the member causes the energy of light that causes the generation of microchannels. It does not generate uneven density. Therefore, the optical member on the side of the object to be exposed from the synthetic quartz glass member is not irradiated with pulsed light containing uneven energy density, the generation of microchannels is suppressed, and the life of the exposure apparatus is further improved. be able to.
- the size of foreign matter or bubbles contained in the optical member disposed closer to the light source than the synthetic quartz glass member is 1 ⁇ m. Since it is ⁇ or less, when the panoramic light passes through, it does not generate unevenness in the energy density of the light, which causes the generation of microchannels. And the life of the exposure apparatus can be further improved.
- the exposure apparatus of the present invention described in ⁇ 9> and ⁇ 9-1> since the energy density unevenness of the pulsed light is reduced to a predetermined range, a minute and large change which is likely to cause a microchannel is generated. There is no uneven energy density, and the generation of a microphone opening channel can be suppressed to extend the life of the exposure apparatus.
- all of the synthetic quartz glass members are arranged closer to the object to be exposed than the homogenizer arranged closest to the light source. Therefore, it is possible to irradiate the synthetic quartz member with ultraviolet rays having reduced energy density unevenness, which causes the generation of a microphone channel, thereby suppressing the generation of microchannels and extending the life of the exposure apparatus. it can.
- FIG. 1 is a graph showing the correlation between the irradiation energy density and the number of generated microchannel pulses.
- FIG. 2 is a graph showing the correlation between the thickness of the optical member and the number of microchannel generated pulses.
- FIG. 3 is a schematic diagram of a differential interference microscope image of the microchannel.
- FIG. 4 is a diagram schematically showing a configuration of an exposure apparatus according to a preferred embodiment of the present invention.
- FIG. 5 is a diagram schematically showing a configuration of an exposure apparatus according to another preferred embodiment of the present invention.
- FIG. 4 shows an exposure apparatus according to a preferred embodiment of the present invention.
- ultraviolet light having a wavelength of 300 nm or less emitted from a light source 1 is converted into a parallel light beam by a light beam shaping optical system 3 in which a plurality of lenses 2 are arranged, and is provided with a diffraction grating 4a, a lens 4b, and the like.
- the homogenizer 5 corrects the deviation of the luminous flux and reduces the unevenness of the energy density, and irradiates the mask 11 via the integrator 7 such as a fly-eye lens and the condenser lens 9, and then includes a number of lenses 12.
- the exposure shape such as the circuit pattern of the mask 11 is transferred to the object 15 such as a wafer through the projection optical system 13.
- the light source 1 emits pulsed light having a wavelength of 300 nm or less, such as KrF excimer laser light, or pulsed light having a wavelength of 200 nm or less, such as ArF excimer laser light.
- the integrator 7 such as a fly-eye lens acts alone as a homogenizer.
- synthetic quartz glass members made of synthetic quartz glass are used for some or all of a large number of optical members such as lenses 2, 4b, 7, 9, 12 and diffraction grating 4a. ing. In this embodiment, the generation of the microphone opening channel of such a synthetic quartz glass member is suppressed.
- the thickness of the synthetic quartz glass member, the energy density per pulse of the pulse light applied to the synthetic quartz glass member, and the pulse width of the pulse light are formed so as to satisfy the following expression (1).
- the exposure apparatus be formed so as to satisfy the following expression (2).
- L is the thickness of the synthetic quartz glass member (unit: C m)
- the energy density per pulse of the pulsed light I is irradiated to the synthetic quartz glass member (Unit: mj ⁇ cm— 2 'pulse)
- ⁇ indicates the pulse width (unit: ns) of the pulsed light.
- the thickness of the synthetic quartz glass member is a thickness measured along the optical axis of the synthetic quartz glass member, the center thickness when the thickness of the convex lens is uneven, and the thickness when the lens is concave. It is between the outer edges. In the case of a meniscus lens, the value is measured along the optical axis between the center of the convex surface and the outer edge of the concave surface.
- the present invention does not require that all the synthetic quartz glass members constituting the exposure apparatus satisfy the above relational expressions.
- a member such as a lens 2 immediately after the light source, on which a beam of extremely high energy density is incident
- the thickness L of the member becomes extremely small even if the above formula is applied to prevent microchannels. It is difficult in practice. Therefore, when such a member is composed of a synthetic quartz glass member, it is expected that microchannels will be generated relatively early and that measures such as replacement of components will be required.
- the ratio of the member to the entire optical system is very small. Therefore, if the other members satisfy the above relational expression, the effect of suppressing the microchannel on the entire exposure apparatus is not significantly impaired.
- the number of the synthetic quartz glass members satisfying the relationship of the above-mentioned formula (1) is at least one half or more of the total number of the synthetic quartz glass members constituting the exposure apparatus, and in particular, the wavelength of 20 Omn or less.
- the number of synthetic quartz glass members satisfying the relationship of the above-mentioned formula (2) is one half or more. Further, as described below, such a problem does not occur if the member on which the light beam having a high energy density is incident is made of anhydrous fluorine-doped quartz glass or a crystalline material.
- Microchannels are thought to be generated by the accumulation of compaction, but when synthetic quartz glass is used as the material for optical components, compaction cannot be avoided. Therefore, the energy density of ultraviolet light is high in regions where the energy density per pulse of the pulsed light applied to the optical member is lmj ⁇ cm— 2 ⁇ pulse In one or more regions, it is also preferable to use a material that does not easily cause compaction as the optical member. This is because the generation of the microphone opening channel can be suppressed by selecting the material of the optical member.
- Examples of the material of the optical member disposed in the region irradiated with the pulsed light having such energy density include anhydrous fluorine-doped quartz glass and a crystal material made of a single crystal.
- anhydrous fluorine-doped quartz glass As the anhydrous fluorine-doped quartz glass, an ArF excimer laser energy density 30 mj ⁇ cm "2 ⁇ pulse -1 per pulse was irradiated IX 10 7 Panoresu, refractive index variation to be measured at a wavelength of 633nm at the front and back It is preferable to use one having a concentration of 3 ppm or less, and such an anhydrous fluorine-doped quartz glass can easily suppress the microchannel phenomenon.
- the crystal material is selected from the group consisting of quartz single crystal, aluminum oxide single crystal, calcium fluoride single crystal, magnesium fluoride single crystal and the like, used alone or in combination of two or more. can do.
- the use of such a crystalline material can more reliably suppress the microchannel phenomenon.
- very high area energy density per pulse for example, in a region where 10 ⁇ 100mJ ⁇ c m- 2 ⁇ pulse- 1 order of pulse light is irradiated using a crystalline material, l ⁇ 10mj - cm one 2 -It is possible to use a glass material such as anhydrous fluorine-doped quartz glass with a small amount of compaction in the region of aboutinstall e- 1 .
- the irradiated light has a minute energy density distribution, and when there is uneven energy density, a microchannel is likely to be generated. Therefore, in an exposure apparatus in which a plurality of optical members are arranged, it is preferable to reduce uneven energy density in a direction orthogonal to the optical axis of light applied to the optical members.
- the width between the tops of the energy density unevenness is wider than 0.1 lmm in the ultraviolet light applied to the optical member to prevent the generation of the microchannel,
- the homogenizer 5 it is preferable to arrange the homogenizer 5 to reduce the uneven energy density. It is preferable not to dispose a synthetic quartz glass member between the light source 1 and the homogenizer 5 disposed closest to the light source 1, for example, in the light flux rectifying optical system 3.
- the ultraviolet light emitted from the light source 1 or the ultraviolet light emitted through the homogenizer 5 or the like has a small energy density
- striae exist when passing through each optical member.
- light having transmitted through the optical member has uneven energy density.
- an optical member having a first to third-grade stria in Japanese Optical Glass Industry Standard (J0GIS) 11-1975. It is also preferable that the size of foreign matter and bubbles contained in the powder be 1 ⁇ or less.
- J0GIS Optical Glass Industrial Standard
- layered Inhomogeneity is a pinhole light projection image that is slightly visible.
- the present invention exposes the reticle pattern by synchronously moving the reticle and the wafer.
- Step of illuminating Scanning projection exposure apparatus of 'and' scan method (US Pat. No. 5,473,410), not only so-called scanning stepper, but also exposing the reticle pattern while the reticle and wafer are stationary
- the present invention can also be applied to a step-and-repeat type exposure apparatus (stepper) that sequentially moves a wafer.
- the present invention is also applicable to a twin-stage type exposure apparatus.
- the structure and exposure operation of a twin-stage type exposure apparatus are described, for example, in Japanese Patent Application Laid-Open Nos. 10-163099 and 10-214783 (corresponding to US Pat. Nos. 6,341,007, 6,400,441, 6,549). , No. 269 and 6,590,634), Table 2000-505958 (corresponding US Patent 5,969,441) or US Patent 6,20
- the present invention provides a liquid immersion exposure apparatus that locally fills a liquid between a projection optical system and an object to be exposed, and a liquid immersion exposure apparatus that moves a stage holding a substrate to be exposed in a liquid tank.
- the present invention can be applied to a liquid immersion exposure apparatus in which a liquid tank having a predetermined depth is formed on a stage and a substrate is held therein.
- the structure and exposure operation of an immersion exposure apparatus for moving a stage holding a substrate to be exposed in a liquid tank are described in, for example, Japanese Patent Application Laid-Open No. 6-124873.
- An immersion exposure apparatus for forming and holding a substrate therein is disclosed in, for example, Japanese Patent Application Laid-Open No. 10-303114 and US Pat. No. 5,825,043.
- the exposure apparatus of the present invention has the following features: 1> to ⁇ 10>, ⁇ 7-1>
- the fluorine-de-loop quartz glass anhydride has a refractive index variation to be measured at a wavelength of 633mn when the ArF excimer laser beam energy density 3030mJ ⁇ cm- 2 ⁇ pulse- 1 1 X 10 7 and pulse irradiation is 3ppm or less It was.
- the sample was directly irradiated with a KrF excimer laser beam or ArF excimer laser beam having a diameter of 5 regulated by an aperture from a light source without passing through an optical component such as a lens or a homogenizer.
- the energy density per pulse of laser light was adjusted by changing the discharge voltage, and the value was measured by placing a Joule meter at the sample position.
- the sample was placed inside an aluminum box, and the atmosphere inside the box was replaced with dry nitrogen gas. We fixed the energy density of the laser beam and continued to irradiate the laser beam until a microchannel was generated.
- the pulse width ⁇ of the excimer laser is 2 Ons for both KrF and ArF excimer lasers. The presence or absence of the microphone opening channel was checked visually by illuminating the sample with light from a condensing lamp.
- Example 1 A sample with a thickness of 10 mm was cut out, and a surface with a diameter of 30 mm was optically polished on both sides to prepare a sample.
- This sample was irradiated with a KrF or ArF excimer laser beam having passed through a homogenizer while controlling the diameter to 5 mm with an aperture. Microchannel generation was observed in the same procedure as in Example 1 below.
- a synthetic quartz glass containing 1100 ppm of 0H groups and 2 ⁇ 10 12 hydrogen molecules Zcm 2 was cut into a size of 30 mm in diameter and 10 mm in thickness, and a surface with a diameter of 30 mm was optically polished on both sides to prepare a sample.
- a quartz glass member of class 1 to class 4 according to J0GIS-11-1975 was placed between this sample and the light source, and irradiation was performed in the same manner as in Example 1 to compare the number of pulses generated by the microchannel. .
- Example 4 A sample prepared in the same manner as in Example 3 was used, and synthetic quartz glass free of bubbles and foreign matter was placed between the sample and the aperture, and a mixture of foreign matter or bubbles of about 1 ⁇ was mixed. The case where quartz glass was arranged was compared. Irradiation conditions were the same as in Example 1.
- the number of microchannel-generated pulses is reduced to 1/20 when synthetic quartz glass containing foreign substances or bubbles is placed, compared to when synthetic quartz glass containing no bubbles and foreign substances is placed. did.
- FIG. 5 is a schematic configuration diagram of the exposure apparatus 101 manufactured in this example.
- the exposure apparatus main body 102 is housed in the chamber 106, and is controlled so that the temperature is kept constant.
- the laser beam that has passed through the light transmission window 105 is shaped into a laser beam having a predetermined cross-sectional shape by the beam shaping optical system 107, and a plurality of laser beams having different transmittances (light reduction rates) provided on the turret plate TP are provided.
- the ND filters ND 1 in FIG. 5
- the light is reflected by a reflecting mirror 108 and guided to a fly-eye lens 109 as a homogenizer (integrator).
- the fly-eye lens 109 is formed by bundling a large number of lens elements, and a plurality of light source images (secondary light sources) corresponding to the number of lens elements constituting the lens element are provided on the emission surface side of the lens element. ) Is formed.
- a turret plate 112 having a plurality of aperture stops having different shapes and sizes from each other is provided.
- the turret plate 1 1 2 is driven to rotate by a motor 1 13, and one of the aperture stops is selected according to the pattern of the reticle R to be transferred onto the wafer W, and the illumination optical system is selected.
- the turret plate 112 and the motor 113 constitute a variable aperture stop for an illumination system.
- the light beam from the secondary light source formed by the fly-eye lens 109 passes through the variable aperture stop of the turret plate 112 and is split by the beam splitter 114 into two optical paths.
- the light transmitted through the beam splitter 1 14 passes through a relay lens 17, a variable field stop 1 10 that defines a rectangular aperture, and a relay lens 18, and is reflected by a reflection mirror 19, and then reflected by a plurality of light sources.
- the light is condensed by a condenser optical system 20 composed of a refractive optical element such as a lens. Thereby, the illumination area on the reticle R defined by the aperture of the variable field stop 110 is superimposed and substantially uniformly illuminated.
- an image of the circuit pattern on the reticle R is formed on the wafer W, which is the object to be exposed, by the projection optical system 111, and the resist applied on the wafer W is exposed to light, and the circuit pattern is formed on the wafer W.
- the pattern image is transferred.
- a plurality of optical members are arranged in the illumination optical system and the projection optical system, and at least one of them is made of synthetic quartz glass.
- the relay lens 18 is made of synthetic quartz glass, the center thickness L of which is 5 cm, and the incident energy density I is 6 mj ⁇ cm ⁇ 2.
- the incident energy density I to the relay lens 18 is a value when an ND filter having the highest transmittance among the ND filters on the target plate TP is selected. If you select an ND filter with a lower transmittance than this, a relay lens Since the incident energy density I on 18 also decreases, the above condition is still satisfied regardless of which ND filter is selected.
- the beam shaping optical system 107 and the turret plate TP which are arranged between the KrF excimer laser light source 103 and the fly-eye lens 109,
- Each of the ND filter and the reflection mirror 108 is made of a member (such as a single crystal of calcium fluoride) other than synthetic quartz glass. Therefore, in the exposure apparatus 101 of the present embodiment, all of the synthetic quartz glass members have a larger wafer W (W) than the fly-eye lens 109 which is the homogenizer closest to the KrF excimer laser beam ⁇ 1103. The light irradiated to the synthetic quartz glass member had been homogenized sufficiently by a homogenizer.
- all of the optical members constituting the exposure apparatus 101 of the present embodiment are made of a material having a first-class striae in the evaluation based on J0GISU-1475 and containing no foreign matter and bubbles exceeding 1 m. Thus, the occurrence of uneven energy density in light passing through the optical member was sufficiently suppressed.
- the light incident on the synthetic quartz glass member has a width between adjacent peaks of uneven energy density in a plane perpendicular to the optical axis wider than 0.1 mm. And the difference between the top and bottom of the energy density was limited to less than 5% of the average energy density. Therefore, in the synthetic quartz glass member constituting the exposure apparatus 101 of the present embodiment, generation of microchannels due to uneven energy density was sufficiently suppressed, and the exposure apparatus 101 of the present embodiment was stable for a long time. It was confirmed that the exposure performance was maintained.
- a glass plate for a liquid crystal display device instead of the wafer W in this embodiment, a glass plate for a liquid crystal display device, a ceramic wafer for a thin-film magnetic head, or an original mask or reticle used in an exposure apparatus (synthetic quartz, silicon wafer), etc. It is also possible to apply.
- the application of the exposure apparatus 101 is limited to the exposure apparatus for semiconductor manufacturing. For example, it is widely used in exposure equipment for liquid crystal, which exposes a liquid crystal display element pattern to a square glass plate, and in exposure equipment for manufacturing thin-film magnetic heads, imaging devices (CCD), reticle R, etc. Applicable.
- the generation of microchannels in the optical member during the irradiation of ultraviolet light (pulse light) is sufficiently suppressed, and the mechanical operation of the optical member when exposing the object to be exposed is performed.
- the life of the exposure apparatus can be improved by preventing damage to the target.
- the generation of microchannels at the time of irradiation with ultraviolet rays (pulse light) is sufficiently suppressed, and the life of an exposure apparatus using the member can be improved.
- the exposure method of the present invention it is possible to sufficiently suppress the generation of microchannels in the optical member and maintain stable exposure characteristics for a long time.
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- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Epidemiology (AREA)
- Engineering & Computer Science (AREA)
- Public Health (AREA)
- Environmental & Geological Engineering (AREA)
- Atmospheric Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Toxicology (AREA)
- Plasma & Fusion (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Lenses (AREA)
Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005505018A JP4370581B2 (ja) | 2003-02-17 | 2004-02-16 | 露光装置及び露光装置用光学部材 |
EP04711441.8A EP1596424B1 (en) | 2003-02-17 | 2004-02-16 | Exposure apparatus and method of exposing a pattern |
US11/202,086 US7072026B2 (en) | 2003-02-17 | 2005-08-12 | Exposure apparatus and optical component for the same |
US11/384,448 US20060158636A1 (en) | 2003-02-17 | 2006-03-21 | Exposure apparatus and optical component for the same |
US11/385,669 US20060164620A1 (en) | 2003-02-17 | 2006-03-22 | Exposure apparatus and optical component for the same |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003038345 | 2003-02-17 | ||
JP2003-038345 | 2003-02-17 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/202,086 Continuation US7072026B2 (en) | 2003-02-17 | 2005-08-12 | Exposure apparatus and optical component for the same |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2004073052A1 true WO2004073052A1 (ja) | 2004-08-26 |
Family
ID=32866389
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2004/001630 WO2004073052A1 (ja) | 2003-02-17 | 2004-02-16 | 露光装置及び露光装置用光学部材 |
Country Status (4)
Country | Link |
---|---|
US (3) | US7072026B2 (ja) |
EP (1) | EP1596424B1 (ja) |
JP (1) | JP4370581B2 (ja) |
WO (1) | WO2004073052A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2015029141A1 (ja) * | 2013-08-27 | 2015-03-05 | 三菱電機株式会社 | レーザ発振器 |
US9435750B2 (en) | 2012-09-12 | 2016-09-06 | Honda Motor Co., Ltd. | Borescope |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9435750B2 (en) | 2012-09-12 | 2016-09-06 | Honda Motor Co., Ltd. | Borescope |
WO2015029141A1 (ja) * | 2013-08-27 | 2015-03-05 | 三菱電機株式会社 | レーザ発振器 |
JPWO2015029141A1 (ja) * | 2013-08-27 | 2017-03-02 | 三菱電機株式会社 | レーザ発振器 |
Also Published As
Publication number | Publication date |
---|---|
JPWO2004073052A1 (ja) | 2006-06-01 |
US20060164620A1 (en) | 2006-07-27 |
EP1596424A9 (en) | 2006-10-25 |
US7072026B2 (en) | 2006-07-04 |
JP4370581B2 (ja) | 2009-11-25 |
EP1596424B1 (en) | 2016-11-02 |
EP1596424A4 (en) | 2008-05-14 |
EP1596424A1 (en) | 2005-11-16 |
US20060012768A1 (en) | 2006-01-19 |
US20060158636A1 (en) | 2006-07-20 |
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