WO2004059753A1 - Film mince supraconducteur d'oxyde - Google Patents

Film mince supraconducteur d'oxyde Download PDF

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Publication number
WO2004059753A1
WO2004059753A1 PCT/JP2003/016578 JP0316578W WO2004059753A1 WO 2004059753 A1 WO2004059753 A1 WO 2004059753A1 JP 0316578 W JP0316578 W JP 0316578W WO 2004059753 A1 WO2004059753 A1 WO 2004059753A1
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WO
WIPO (PCT)
Prior art keywords
substrate
thin film
film
superconducting thin
sapphire
Prior art date
Application number
PCT/JP2003/016578
Other languages
English (en)
Japanese (ja)
Inventor
Keitaro Harada
Masayoshi Yokoo
Yoshinobu Takano
Original Assignee
Tohoku Seiki Industries, Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tohoku Seiki Industries, Ltd. filed Critical Tohoku Seiki Industries, Ltd.
Publication of WO2004059753A1 publication Critical patent/WO2004059753A1/fr

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0576—Processes for depositing or forming copper oxide superconductor layers characterised by the substrate
    • H10N60/0604—Monocrystalline substrates, e.g. epitaxial growth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0576—Processes for depositing or forming copper oxide superconductor layers characterised by the substrate
    • H10N60/0632—Intermediate layers, e.g. for growth control

Definitions

  • the present invention relates to a technique effective when applied to an oxide superconducting thin film and a method for producing the same.
  • oxide single crystal materials have been widely used as substrates for epitaxial films.
  • As one of the applications of superconducting films research and development of high-frequency microwave passive elements using low surface resistance are being actively conducted in Japan and overseas.
  • Oxide single crystal substrates used for the production of high-precision microwave devices are required to have various substrate characteristics such as an appropriate dielectric constant and low dielectric loss. For this reason, many substrate crystals have been tried, new substrate crystals have been developed, and many substrate crystals have become commercially available.
  • Factors that enhance the performance of microwave passive devices include dielectric loss of the substrate in addition to conductor loss.
  • a substrate having a small dielectric loss tangent (ta ⁇ ) is required.
  • Substrate most a small dielectric loss current in the substrate of microwave applications Safuaia substrate - is (R A 1 2 0 3 substrate).
  • a material / crystal growth method that can obtain a large-area substrate at low cost is required.
  • Oxide superconductor thin film for example, YB a 2 C u 3 0 7 _ tf ( hereinafter, referred to as YBC ⁇ )
  • YBC ⁇ Oxide superconductor thin film
  • a buffer layer (intermediate layer) for suppressing interdiffusion of atoms on a sapphire substrate was studied.
  • the buffer one layer of its, hetero E Pita key Interstitial grown ceria (C e 0 2) film was used.
  • C E_ ⁇ 2 film a has fallen apparent efficacy of C E_ ⁇ 2 film.
  • Another advantage of the C e 0 2 buffer layer is that since it has a relatively close lattice constant between YBC ⁇ and C e ⁇ 2, it has the function of relaxing the lattice mismatch between the YB CO film and the sapphire substrate. is there.
  • C E_ ⁇ 2 ceria (C E_ ⁇ 2) which are often used by traditional as buffer one layer on a sapphire substrate and the like. There are very few other reports.
  • a-axis oriented grains can be reduced by raising substrate temperature, reducing oxygen gas pressure atmosphere, increasing oxygen gas flow rate, etc. .
  • the most effective condition is the substrate temperature.
  • the optimal substrate temperature (T s) of YB C0 on Ce 2 thin film in physical vapor deposition is 740 ⁇ 5 ° C, which is higher than other substrates, and the temperature range is Very narrow.
  • T s the optimal substrate temperature
  • the energy of flying to the particles is lower than the chemical vapor deposition method or the like, C e 0 2 on it is poor wettability with, primarily due to the YBCO and crystal structure is different It is considered that This is an application, This can be a negative factor in terms of ease of fabrication.
  • the conventional technique has the following problems.
  • An object of the present invention is to provide a technique capable of facilitating conditions for forming a superconducting thin film on a sapphire substrate.
  • the first aspect is the oxide superconducting thin film deposited through the sapphire (RA 1 2 03) Badzufa layer on a substrate, wherein the buffer is more, made L nA 10 3 of orthorhombic, L n are elements It is characterized by being one of Eu, Sm, and Y.
  • the second invention is the oxide superconducting thin film of the first invention, the oxide superconductor thin films deposited YB a 2 C u 3 0 7 _, characterized by the Dearuko (YB CO).
  • the present inventors conducted a search for a new buffer layer instead of a C e 02 buffer in order to facilitate the conditions for producing an oxide superconducting thin film. This The results of the following examination in the search for a further buffer are shown.
  • the substrate has a lattice constant close to that of the sapphire substrate and YBC0.
  • FIG. 1 is a view showing the ion radius, its lattice constant, and the crystal structure of each L n system according to the present invention.
  • FIG. 2 is a diagram showing a schematic configuration of an oxide superconducting thin film of Example 1 of the present invention.
  • FIG. 3 is a diagram of order to explain the L nA 10 3 buffer further manufacturing method of this embodiment.
  • Figure 4 is a X-ray diffraction pattern of S m A 10 a / RA 1 2 0 3 structural YBC_ ⁇ film of this example.
  • FIG. 5 is a diagram showing an in-plane E direction of the YBC 0 film on SmA L_ ⁇ 3 / RA 1 2 0 3 structure of this embodiment.
  • FIG. 6 is, S m A 10 a / RA 1 2 0 3 structural YBC 0 of this embodiment It is a figure which shows the superconductivity characteristic of a film.
  • FIG. 7 is a view showing the crystal structure of the sapphire (hi-alumina) of this example.
  • FIG. 2 is a cross-sectional view showing a schematic configuration of an oxide superconducting thin film according to an embodiment (example) of the present invention.
  • Oxide superconductor thin film of the present embodiment as shown in FIG. 2, the L n A 1 ⁇ 3 Bruno Uz off ⁇ over layer 2 formed on the sapphire (RA 1 2 0 a) a substrate 1, on the its An oxide superconducting thin film 3 is deposited on the substrate.
  • YBCO was used as the oxide superconducting thin film 3.
  • any one of the elements E11, Sm, and Y was used as Ln (Landy node) of the LnAl03 nosophore layer 2.
  • Table 1 shows the ion radius of Ln (lanthanoid) and the lattice constant of LnA103.
  • L n 2 0 3 perform (L n E u, Sm, Y), the weighing and mixing so that the A l 2 ⁇ 3 composition ratio of interest (L n A 10 3).
  • FIGS. 4 and 5 are Ri X-ray diffraction pattern der of S mA 10 3 / RA 1 2 ⁇ 3 structural YB C 0 film of this example
  • Figure 5 is S of this embodiment is a diagram showing an in-plane orientation of the m A 1 03 / RA 12 0 3 structural YBCO film.
  • the YBC ⁇ manufacturing conditions can be manufactured in substantially the same conditions as L aA 10 3 substrate.
  • substrate temperature compared to C e 0 2
  • it produced in ⁇ 2 0 ° C about a sufficiently low substrate temperature in a very attractive of buffers further material when viewed from easiness of a manufacturing is there.
  • the oxide superconducting thin film of the present embodiment uses a sapphire single-crystal substrate having the R-plane of the sapphire as a substrate surface as a film-forming substrate, and has a uniform c-axis orientation and YB C ⁇ crystal grain orientation in the substrate plane direction.
  • the substrate may be a sapphire single crystal substrate having an R-plane parallel to the substrate surface, which may be polished by a commonly used polishing method.
  • the YBCO film of the YBCO film covering in the YBCO film covering need not be all, but the c-axis of most of the crystal grains must be perpendicular to the sapphire substrate surface. Needless to say, it is desirable that all the crystal grains are c-axis oriented.
  • the superconductor is not limited to YBC 0, substitutional MB a 2 C u 3 0 7 _ d compound of YB C 0 (provided that the M is C e, P r, Pm, T It is clear that similar results can be obtained with lanthanide elements other than b and at least one of Y).
  • a Bi-based, Hg-based, or T1-based superconductor may be used.
  • the crystal structure of sapphire is hexagonal, and the surface to be used differs depending on the intended upper formation layer. They are called C-side, A-side, and: R-side, respectively. Oxide etc. at the top When forming a conductive film, an R-plane is used. For this reason, the notation of a normal substrate, for example, in the case of a silicon substrate used in the semiconductor industry, etc., a notation representing the plane orientation of the substrate equivalent to Si (100) or Si (111) ( RA 1 2 0 3) to become.
  • conditions for producing a superconducting thin film on a sapphire substrate can be facilitated.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Containers, Films, And Cooling For Superconductive Devices (AREA)

Abstract

L'invention concerne un film mince supraconducteur qui est formé sur un substrat saphir dans des conditions simples. Un film mince supraconducteur d'oxyde formé par dépôt sur un substrat saphir (R-Al2O3) via une couche tampon est caractérisé, en ce que la couche tampon est composée d'un cristal orthorhombique exprimé par LnAlO3, Ln étant choisi parmi Eu, Sm et Y.
PCT/JP2003/016578 2002-12-25 2003-12-24 Film mince supraconducteur d'oxyde WO2004059753A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002-374683 2002-12-25
JP2002374683A JP2004207482A (ja) 2002-12-25 2002-12-25 酸化物超電導薄膜

Publications (1)

Publication Number Publication Date
WO2004059753A1 true WO2004059753A1 (fr) 2004-07-15

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JP (1) JP2004207482A (fr)
WO (1) WO2004059753A1 (fr)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5100276B2 (ja) 2007-09-20 2012-12-19 株式会社東芝 超伝導部材
KR100949015B1 (ko) * 2008-04-16 2010-03-23 엘에스전선 주식회사 격자구조가 개선된 초전도 박막선재

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003037304A (ja) * 2001-07-24 2003-02-07 Japan Science & Technology Corp サファイア基板への酸化物超伝導薄膜の製造方法
EP1333505A2 (fr) * 2002-01-25 2003-08-06 The University Of Maryland Squids du type step-edge sur un substrat de saphir et méthode de fabrication
JP2004063562A (ja) * 2002-07-25 2004-02-26 Japan Science & Technology Corp サファイア基板へのバッファ層付き酸化物超伝導薄膜の製造方法及び装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003037304A (ja) * 2001-07-24 2003-02-07 Japan Science & Technology Corp サファイア基板への酸化物超伝導薄膜の製造方法
EP1333505A2 (fr) * 2002-01-25 2003-08-06 The University Of Maryland Squids du type step-edge sur un substrat de saphir et méthode de fabrication
JP2004063562A (ja) * 2002-07-25 2004-02-26 Japan Science & Technology Corp サファイア基板へのバッファ層付き酸化物超伝導薄膜の製造方法及び装置

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
YAMAGUCHI I. ET AL: "Preparation of Y123 films on REAlO3-buffered off-cut substrates of R-plane sapphire", PHYSICA C, vol. 378-381, no. 2, 1 October 2002 (2002-10-01), pages 1227 - 1231, XP004383082 *
YAMAGUCHI I. ET AL: "Preparation of YBa2Cu3O7-x/EuAlO3 multilayer films on alpha-Al2O3 substrates by all-coating-pyrolysis process", PHYSICA C, vol. 382, no. 2-3, 1 November 2002 (2002-11-01), pages 269 - 275, XP004389058 *

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