Classifications

• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
  • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
• • C—CHEMISTRY; METALLURGY
  • C07—ORGANIC CHEMISTRY
  • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
  • C07F1/00—Compounds containing elements of Groups 1 or 11 of the Periodic Table
• • C—CHEMISTRY; METALLURGY
  • C07—ORGANIC CHEMISTRY
  • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
  • C07F1/00—Compounds containing elements of Groups 1 or 11 of the Periodic Table
  • C07F1/005—Compounds containing elements of Groups 1 or 11 of the Periodic Table without C-Metal linkages
• • C—CHEMISTRY; METALLURGY
  • C07—ORGANIC CHEMISTRY
  • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
  • C07F1/00—Compounds containing elements of Groups 1 or 11 of the Periodic Table
  • C07F1/08—Copper compounds
• • C—CHEMISTRY; METALLURGY
  • C07—ORGANIC CHEMISTRY
  • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
  • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
  • C07F7/02—Silicon compounds
  • C07F7/08—Compounds having one or more C—Si linkages
  • C07F7/0803—Compounds with Si-C or Si-Si linkages

Definitions

• the subject of the invention is new copper (I) or silver (I) complexes and their use for the chemical deposition in the gas phase of copper or metallic silver practically free of impurities.
• R, R ′ and R ′′ which are identical or different, are chosen from a hydrogen atom, a halogen atom such as fluorine, a CC 8 alkyl group optionally substituted by one or more fluorine atoms.
• Preferred complexes are those in which R is a hydrogen atom and R and R "are perfluorinated alkyls and advantageously - CF groups corresponding to the following structural formula:
• the formation of metallic copper is the result of a disproportionation of two molecules of copper (1) on a surface heated to a temperature in the region of 200 ° C according to the following reaction scheme : 2Cu (hfac) L Cu (II) (hfac) 2 + Cu (O) + 2L in which hfac represents the hexafluoro acetylacetonate anion and L represents the Lewis or Ligand base.
• the mechanism is the same for the other copper complexes (I) and for the silver complexes (I).
• the nature of the Lewis L base also referred to below as the ligand, has very little influence on the nature of the copper films obtained by CVD. Copper films are generally very pure, and in particular free of carbon, oxygen and fluorine atoms (less than 1%). A resistivity of the order of 1.8 ⁇ .cm is commonly found in copper films obtained by CVD; this value is very close to that found in solid copper (1.67 ⁇ .cm). On the other hand, the nature of Ligand L determines the volatility of the complex and consequently the speed of the copper deposit.
• the technology provided for the metallization by copper of electronic components implies that the copper is deposited on a barrier film which prevents the copper from diffusing into the dielectric and allows the integrity of the electrical contact.
• This barrier is chosen from materials such as TiN, TaN or WN
• titanium, tantalum or tungsten nitride titanium, tantalum or tungsten nitride
• metal titanium, tantalum or tungsten nitride
• Other materials may possibly be used.
• this precursor must thermally decompose according to the disproportionation reaction given previously to ensure high purity of the metallic film deposited.
• the Applicant has developed new compounds, which are copper (I) or silver (I) complexes, devoid of fluorine, copper or silver precursors in the metal gas deposition process, these compounds remedying the drawbacks of the prior art.
• - M represents a copper atom or a silver atom
• R 'and R " identical or different, represent a group chosen from: a C 1 -C 8 alkyl; a group -OR'", in which R '"represents a C 1 -C 6 alkyl;
• R represents a group chosen from: a group - OR, in which R represents a CC 8 alkyl; a nitro group: NO 2 ; a aldehyde function: -CHO; an ester function -COOR '"" , in which R represents a C 1 -C 8 alkyl group;
• L represents the stabilization ligand of this complex.
• L can be chosen from the ligands used in the prior art as stabilizers for copper (I) complexes, in particular the ligands described in the documents already cited above.
• 1-octene Pisobutylene, 1,5-cyclooctadiene, stilbene, diphenylacetylene, styrene, cyclooctene, 1,5,9-cyclododecatriene, 1,3-hexadiene, isopropylacetylene, 1-decene, 2,5-bicycloheptadiene, 1-octadecene, cyclopentene, octaline, methylene cyclohexane, diphenylfulvene, 1-octadecyne, benzylcinnamate, benzal acetophenone, acrylonitrile, maleic anhydride, acid oleic, linoleic acid, acrylic acid, methyl methacrylate, diethyl maleate, 1,5-methyl-cyclooctadiene, dimethyl-1,5-cyclooctadiene, methylcyclooctene, cyclooc
• R 1 represents the hydrogen atom or an alkyl group Ci-C 8, or a group SiR 4 R 5 R 6.
• R and R identical or different, represent the hydrogen atom or a C 1 -C 8 alkyl group
• R 4 , R 5 and R 6 identical or different, represent a phenyl or C ⁇ -C 8 alkyl group; f- the compounds corresponding to formula (III) below:
• R 7 represents a Cs-alkyl, phenyl or Si (R 8 ) (R 9 ) (R 10 ) group; - R 8 , R 9 , R 10 , identical or different, represent a C 1 -C 8 alkyl or phenyl group; g- the compounds corresponding to one of the formulas (IV), (V) and (VI) below:
• Y 13 Y 2 , Y 3 and Y 4 are chosen from a hydrogen atom, a C Cs alkyl, a group -Si (R 5 ) 3 where R 5 is a CpC 8 alkyl , i and j represent an integer chosen from 0, 1, 2, 3, and] and X 2 , identical or different, represent an electron attracting group such as in particular a C] -C 8 alkenyl; examples of products corresponding to formulas (IV), (V) and (VI) are illustrated in International Application WO 98/40387.
• alkyl designates linear, branched or cyclic hydrocarbon radicals. It is understood in particular that two alkyl radicals of the same molecule can be joined to form a cyclic molecule.
• the preferred molecules of the present invention are those corresponding to formula (I) for which one or more of the conditions below are met:
• M represents the copper atom
• R 'or R represents a group chosen from CH 3 and C 2 H 5
• - R represents a group chosen from NO 2 and OCH 3
• L represents a ligand chosen from 1,5-cyclooctadiene and bis (trimethylsilyl) acetylene.
• the compounds of the present invention can be prepared by a process already described in the prior art: P. Doppelt, T. H. Baum, L. Richard, Inorg. Chem. 35, 1286, 1996.
• the invention also relates to a process for the chemical deposition in the gas phase of a metal chosen from copper and silver on a support.
• the support may consist of a material chosen in particular from Si, AsGa, InP, SiC, SiGe.
• the copper layer may be deposited on said support as a first layer or as n, th metallization layer for electronic devices requiring several metallization levels, n being an integer greater than or equal to 2.
• the support may be constituted by one aforementioned materials taken as is, or by one of these materials carrying one or more intermediate layers.
• intermediate layers mention may be made of the diffusion layers constituted by at least one material chosen, for example, from TiN, TiSiN, Ta, TaN, TaSiN, WN, WSiN.
• the method according to the invention consists in applying a chemical gas deposition method, or CVD, already known from the prior art to the copper and silver precursor compounds described above.
• This method makes it possible in particular to make a selective deposition of the metal chosen on the electrically conductive surface of the support while avoiding depositing it on the insulating portions of this same support, such as for example the silicon dioxide portions of the integrated circuit supports.
• this process is carried out at a temperature ranging from 120 to 300 ° C.
• the compound according to the invention is used pure when this compound is a liquid at room temperature, or in solution if this compound is solid at room temperature.
• the solid compounds are advantageously dissolved in a hydrocarbon solvent, in particular in a cyclic hydrocarbon solvent such as for example cyclohexane or tetrahydrofuran or aromatic solvents such as toluene, xylene or mesitylene.
• a hydrocarbon solvent such as for example cyclohexane or tetrahydrofuran or aromatic solvents such as toluene, xylene or mesitylene.
• the compounds according to the invention can be used in standard CVD equipment as commonly used in the electronic industry. They have the advantage of not releasing harmful compounds liable to damage a substrate for an integrated circuit or to reduce its selectivity.
• the composition containing the metal precursor is sent to a vaporization device through which it is introduced into the reactor which contains the support on which the copper or silver layer must be deposited.
• the composition Before arriving in the spray device, the composition is generally kept in a tank at room temperature.
• the vaporization of the precursor composition can be carried out using various devices known to those skilled in the art. As a preferred example, mention may be made of the device described in the document TY Chen, J. Vaissermann, E. Ruiz, JP Sénateur, P. Doppelt, Chem. Mast. 2001, 13, 3993.
• Said device marketed by the company Jipelec under the name of “TriJet Liquid Precursor Delivery and Evaporation System” comprises three main parts: the reservoir, an injector and an evaporator.
• the copper complex solution (I) which is located in the tank maintained at a pressure of 1 bar, is propelled by the injector by pressure difference in the evaporator which is maintained under vacuum.
• the injection rate is controlled by a micro-valve controlled by a computer.
• the evaporator and the rest of the assembly which mainly consists of a reaction chamber for a single support, are kept at the same temperature.
• the thickness of copper which is deposited on the support depends on the concentration of the precursor composition, the flow rate of this composition during the passage through the vaporization device, the duration of the vaporization, the respective temperatures in the reactor and on the support. In general, less concentrated compositions and / or lower flow rates are used to obtain thin layers, and more concentrated compositions and / or higher flow rates for obtaining thick layers.
• thin layer is generally meant a layer having a thickness less than or equal to 50 nm, called the nucleation layer.
• thick layer is generally meant a layer having a thickness between 50 nm and 1 ⁇ m.
• the method according to the invention makes it possible to produce, from precursors, metals in oxidized form (+1), interconnections and metallization of integrated circuits with a thickness ranging from 0.2 to 500 nm, preferably from 0.2 to 50 nm. .
• the use of the compositions according to the invention for the production of copper layers by CVD makes it possible to obtain good quality copper layers having good adhesion to the support on which they are deposited.
• acac anion of acetylacetone.
• COD 1,5-cyclooctadiene.
• BTMSA bis- (trimethylsilyl) -acetylene.
• EDTA ethylenediaminetetracetic disodium.
• N0 2 -acac The synthesis of N0 2 -acac takes place in two stages as described in the literature by Z. Yoshida, H. Ogoshi and T. Tokumitsu, Tetrahedron, 1970,
• the first step consists in forming the copper (II) complex: bis- (3-nitro-2,4-pentanediono) -copper (II) (Cu (N0 2 -acac) 2 ), the second to isolate ⁇ -diketone by decomplexation using EDTA.
• the procedure is identical to that allowing the preparation of Cu (NO 2 -acac) 2 .
• the reaction mixture consists of:
• the product obtained is a dark green solid.
• the gross yield is 60-65%.
• the compound can be recrystallized from a hexane / methanol mixture (30 ml / 1 Oml).
• the reaction mixture consists of: - 7.72 g (17.7 mmol) of Cu (NO 2 -3.5-heptanedione) 2
• the reaction mixture consists of:
• the product obtained is a yellow solid.
• the yield is 60%.
• the reaction mixture consists of:
• the copper complexes described here being solids, they can be used pure in a bubbler or preferably dissolved in a neutral solvent such as cyclohexane, tetrahydrofuran or aromatic solvents such as toluene, xylene or mesitylene.
• a neutral solvent such as cyclohexane, tetrahydrofuran or aromatic solvents such as toluene, xylene or mesitylene.
• the reaction does not require the action of a reactive gas, the species formed Cu ( ⁇ -diketonate) 2 (II) and L are volatile and evacuated from the system.
• the support was a silicon wafer which has a diameter of 4 inches and which is covered with a TiN film having a thickness of 200 nm, and the flow rate of precursor composition was 0.4 ml / min.
• the support was a silicon wafer which has a diameter of 8 inches and which is covered with a TiN film having a thickness of 200 nm, and the flow rate of precursor composition was 2.4 ml / min.

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• Chemical & Material Sciences (AREA)
• Organic Chemistry (AREA)
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• Chemical Kinetics & Catalysis (AREA)
• Engineering & Computer Science (AREA)
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• Mechanical Engineering (AREA)
• Metallurgy (AREA)
• Chemical Vapour Deposition (AREA)
• Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
• Inorganic Compounds Of Heavy Metals (AREA)
• Solid-Sorbent Or Filter-Aiding Compositions (AREA)

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• 2002
  • 2002-09-30 FR FR0212059A patent/FR2845088B1/fr not_active Expired - Fee Related
• 2003
  • 2003-09-25 CA CA2500386A patent/CA2500386C/fr not_active Expired - Fee Related
  • 2003-09-25 AT AT03798226T patent/ATE334990T1/de active
  • 2003-09-25 WO PCT/FR2003/002820 patent/WO2004029061A1/fr not_active Ceased
  • 2003-09-25 DE DE60307304T patent/DE60307304T2/de not_active Expired - Lifetime
  • 2003-09-25 EP EP03798226A patent/EP1551851B1/fr not_active Expired - Lifetime
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