WO2004028744A1 - Polishing pad with window for planarization - Google Patents

Polishing pad with window for planarization Download PDF

Info

Publication number
WO2004028744A1
WO2004028744A1 PCT/US2003/030139 US0330139W WO2004028744A1 WO 2004028744 A1 WO2004028744 A1 WO 2004028744A1 US 0330139 W US0330139 W US 0330139W WO 2004028744 A1 WO2004028744 A1 WO 2004028744A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
polishing pad
opening
partially
polishing
Prior art date
Application number
PCT/US2003/030139
Other languages
English (en)
French (fr)
Inventor
Robert Swisher
William C. Allison
Alan E. Wang
Original Assignee
Ppg Industries Ohio, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ppg Industries Ohio, Inc. filed Critical Ppg Industries Ohio, Inc.
Priority to EP03759509A priority Critical patent/EP1542832A1/en
Priority to JP2004539871A priority patent/JP2005538571A/ja
Priority to AU2003275237A priority patent/AU2003275237A1/en
Publication of WO2004028744A1 publication Critical patent/WO2004028744A1/en

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • B24B37/205Lapping pads for working plane surfaces provided with a window for inspecting the surface of the work being lapped
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting

Definitions

  • the CMP process can provide effective polishing at desired polishing rates while reducing or minimizing surface imperfections, defects, corrosion, and erosion.
  • in-situ metrology Planarizing tools having the ability to measure the progress of the planarization process while the wafer is held in the tool and in contact with the pad are known in the art. Measuring the progress of planarizing a microelectronic device during the planarizing process can be referred to in the art as "in-situ metrology".
  • United States Patents 5,964,643 and 6,159,073; and European Patent 1,108,501 describe polishing or planarizing tools and in-situ metrology systems.
  • in-situ metrology can include directing a beam of light through an at least partially transparent window located in the platen of the tool; the beam of light can be reflected off the surface of the wafer, back through the platen window, and into a detector.
  • the coating can be an aqueous acrylic latex, which can be applied following stacking of the pad assembly.
  • the coating can be at least partially applied to the top and bottom surfaces of the window area of the second layer. Application of the coating can be performed following removal of an adhesive from the window area.

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Laminated Bodies (AREA)
PCT/US2003/030139 2002-09-25 2003-09-18 Polishing pad with window for planarization WO2004028744A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP03759509A EP1542832A1 (en) 2002-09-25 2003-09-18 Polishing pad with window for planarization
JP2004539871A JP2005538571A (ja) 2002-09-25 2003-09-18 平坦化するための窓を有する研磨パッド
AU2003275237A AU2003275237A1 (en) 2002-09-25 2003-09-18 Polishing pad with window for planarization

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US41336702P 2002-09-25 2002-09-25
US60/413,367 2002-09-25

Publications (1)

Publication Number Publication Date
WO2004028744A1 true WO2004028744A1 (en) 2004-04-08

Family

ID=32043244

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/030139 WO2004028744A1 (en) 2002-09-25 2003-09-18 Polishing pad with window for planarization

Country Status (8)

Country Link
US (1) US20040102141A1 (zh)
EP (1) EP1542832A1 (zh)
JP (2) JP2005538571A (zh)
KR (1) KR20050052513A (zh)
CN (1) CN100417493C (zh)
AU (1) AU2003275237A1 (zh)
TW (1) TWI287836B (zh)
WO (1) WO2004028744A1 (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006049655A1 (en) * 2004-10-27 2006-05-11 Ppg Industries Ohio, Inc. Polyurethane urea polishing pad
US9156124B2 (en) 2010-07-08 2015-10-13 Nexplanar Corporation Soft polishing pad for polishing a semiconductor substrate
CN111069994A (zh) * 2019-12-11 2020-04-28 陈强 一种桥梁加固钢板精确加工设备

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070010169A1 (en) * 2002-09-25 2007-01-11 Ppg Industries Ohio, Inc. Polishing pad with window for planarization
US6676483B1 (en) * 2003-02-03 2004-01-13 Rodel Holdings, Inc. Anti-scattering layer for polishing pad windows
US20040209066A1 (en) * 2003-04-17 2004-10-21 Swisher Robert G. Polishing pad with window for planarization
US6984163B2 (en) * 2003-11-25 2006-01-10 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing pad with high optical transmission window
US20060019417A1 (en) * 2004-07-26 2006-01-26 Atsushi Shigeta Substrate processing method and substrate processing apparatus
US20060089094A1 (en) * 2004-10-27 2006-04-27 Swisher Robert G Polyurethane urea polishing pad
US20060089093A1 (en) * 2004-10-27 2006-04-27 Swisher Robert G Polyurethane urea polishing pad
CN101966697B (zh) 2006-04-19 2015-04-22 东洋橡胶工业株式会社 抛光垫的制造方法
JP4943233B2 (ja) * 2007-05-31 2012-05-30 東洋ゴム工業株式会社 研磨パッドの製造方法
US7635290B2 (en) * 2007-08-15 2009-12-22 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Interpenetrating network for chemical mechanical polishing
TWI411495B (zh) * 2007-08-16 2013-10-11 Cabot Microelectronics Corp 拋光墊
US7985121B2 (en) * 2007-11-30 2011-07-26 Innopad, Inc. Chemical-mechanical planarization pad having end point detection window
JP5233621B2 (ja) * 2008-12-02 2013-07-10 旭硝子株式会社 磁気ディスク用ガラス基板及びその製造方法。
US20130012108A1 (en) * 2009-12-22 2013-01-10 Naichao Li Polishing pad and method of making the same
US9017140B2 (en) 2010-01-13 2015-04-28 Nexplanar Corporation CMP pad with local area transparency
US8758659B2 (en) 2010-09-29 2014-06-24 Fns Tech Co., Ltd. Method of grooving a chemical-mechanical planarization pad
JP5858576B2 (ja) * 2011-04-21 2016-02-10 東洋ゴム工業株式会社 積層研磨パッド用ホットメルト接着剤シート、及び積層研磨パッド用接着剤層付き支持層
JP5893479B2 (ja) * 2011-04-21 2016-03-23 東洋ゴム工業株式会社 積層研磨パッド
JP2014094424A (ja) * 2012-11-08 2014-05-22 Toyo Tire & Rubber Co Ltd 積層研磨パッド
JP7105334B2 (ja) * 2020-03-17 2022-07-22 エスケーシー ソルミックス カンパニー,リミテッド 研磨パッドおよびこれを用いた半導体素子の製造方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0844265A1 (en) * 1995-08-11 1998-05-27 Daikin Industries, Limited Silicon-containing organic fluoropolymers and use of the same
EP0845328A2 (en) * 1996-11-29 1998-06-03 Sumitomo Metal Industries, Ltd. Polishing pad and apparatus for polishing a semiconductor wafer
EP0941806A2 (en) * 1998-03-10 1999-09-15 LAM Research Corporation Wafer polishing device with moveable window
US6017265A (en) * 1995-06-07 2000-01-25 Rodel, Inc. Methods for using polishing pads
US20010044261A1 (en) * 1999-04-26 2001-11-22 Elledge Jason B. Apparatus for in-situ optical endpointing on web-format planarizing machines in mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies and methods for making and using same
WO2002022309A1 (en) * 2000-09-15 2002-03-21 Ppg Industries Ohio, Inc. Polishing pad comprising particulate polymer and crosslinked polymer binder
US6402591B1 (en) * 2000-03-31 2002-06-11 Lam Research Corporation Planarization system for chemical-mechanical polishing

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US3572232A (en) * 1968-04-01 1971-03-23 Itek Corp Photographic film processing material
US5257478A (en) * 1990-03-22 1993-11-02 Rodel, Inc. Apparatus for interlayer planarization of semiconductor material
US6120860A (en) * 1990-08-23 2000-09-19 American National Can Company Multilayer film structure and packages therefrom for organics
US5212910A (en) * 1991-07-09 1993-05-25 Intel Corporation Composite polishing pad for semiconductor process
US5893796A (en) * 1995-03-28 1999-04-13 Applied Materials, Inc. Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus
US6126532A (en) * 1997-04-18 2000-10-03 Cabot Corporation Polishing pads for a semiconductor substrate
TW377467B (en) * 1997-04-22 1999-12-21 Sony Corp Polishing system, polishing method, polishing pad, and method of forming polishing pad
JPH11277408A (ja) * 1998-01-29 1999-10-12 Shin Etsu Handotai Co Ltd 半導体ウエーハの鏡面研磨用研磨布、鏡面研磨方法ならびに鏡面研磨装置
US6585574B1 (en) * 1998-06-02 2003-07-01 Brian Lombardo Polishing pad with reduced moisture absorption
US6159073A (en) * 1998-11-02 2000-12-12 Applied Materials, Inc. Method and apparatus for measuring substrate layer thickness during chemical mechanical polishing
US6231428B1 (en) * 1999-03-03 2001-05-15 Mitsubishi Materials Corporation Chemical mechanical polishing head assembly having floating wafer carrier and retaining ring
US6261168B1 (en) * 1999-05-21 2001-07-17 Lam Research Corporation Chemical mechanical planarization or polishing pad with sections having varied groove patterns
US6439968B1 (en) * 1999-06-30 2002-08-27 Agere Systems Guardian Corp. Polishing pad having a water-repellant film theron and a method of manufacture therefor
ATE339154T1 (de) * 1999-09-21 2006-10-15 Honeywell Hommed Llc System zur häuslichen patientenüberwachung
US6561891B2 (en) * 2000-05-23 2003-05-13 Rodel Holdings, Inc. Eliminating air pockets under a polished pad
US6685537B1 (en) * 2000-06-05 2004-02-03 Speedfam-Ipec Corporation Polishing pad window for a chemical mechanical polishing tool
US20030094593A1 (en) * 2001-06-14 2003-05-22 Hellring Stuart D. Silica and a silica-based slurry
JP4131632B2 (ja) * 2001-06-15 2008-08-13 株式会社荏原製作所 ポリッシング装置及び研磨パッド
US6722249B2 (en) * 2001-11-06 2004-04-20 Rodel Holdings, Inc Method of fabricating a polishing pad having an optical window
US7097549B2 (en) * 2001-12-20 2006-08-29 Ppg Industries Ohio, Inc. Polishing pad
CN1684799A (zh) * 2002-09-25 2005-10-19 Ppg工业俄亥俄公司 平面化用的抛光垫片

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6017265A (en) * 1995-06-07 2000-01-25 Rodel, Inc. Methods for using polishing pads
EP0844265A1 (en) * 1995-08-11 1998-05-27 Daikin Industries, Limited Silicon-containing organic fluoropolymers and use of the same
EP0845328A2 (en) * 1996-11-29 1998-06-03 Sumitomo Metal Industries, Ltd. Polishing pad and apparatus for polishing a semiconductor wafer
EP0941806A2 (en) * 1998-03-10 1999-09-15 LAM Research Corporation Wafer polishing device with moveable window
US20010044261A1 (en) * 1999-04-26 2001-11-22 Elledge Jason B. Apparatus for in-situ optical endpointing on web-format planarizing machines in mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies and methods for making and using same
US6402591B1 (en) * 2000-03-31 2002-06-11 Lam Research Corporation Planarization system for chemical-mechanical polishing
WO2002022309A1 (en) * 2000-09-15 2002-03-21 Ppg Industries Ohio, Inc. Polishing pad comprising particulate polymer and crosslinked polymer binder

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006049655A1 (en) * 2004-10-27 2006-05-11 Ppg Industries Ohio, Inc. Polyurethane urea polishing pad
US9156124B2 (en) 2010-07-08 2015-10-13 Nexplanar Corporation Soft polishing pad for polishing a semiconductor substrate
CN111069994A (zh) * 2019-12-11 2020-04-28 陈强 一种桥梁加固钢板精确加工设备

Also Published As

Publication number Publication date
TWI287836B (en) 2007-10-01
JP2008229843A (ja) 2008-10-02
AU2003275237A1 (en) 2004-04-19
TW200522185A (en) 2005-07-01
CN100417493C (zh) 2008-09-10
KR20050052513A (ko) 2005-06-02
US20040102141A1 (en) 2004-05-27
JP2005538571A (ja) 2005-12-15
EP1542832A1 (en) 2005-06-22
CN1684798A (zh) 2005-10-19

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