WO2004027110A2 - Additives to prevent degradation of alkyl-hydrogen siloxanes - Google Patents
Additives to prevent degradation of alkyl-hydrogen siloxanes Download PDFInfo
- Publication number
- WO2004027110A2 WO2004027110A2 PCT/US2003/029183 US0329183W WO2004027110A2 WO 2004027110 A2 WO2004027110 A2 WO 2004027110A2 US 0329183 W US0329183 W US 0329183W WO 2004027110 A2 WO2004027110 A2 WO 2004027110A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- linear
- methylphenyl
- branched
- formula
- methyl
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/04—Oxygen-containing compounds
- C08K5/05—Alcohols; Metal alcoholates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4402—Reduction of impurities in the source gas
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/04—Oxygen-containing compounds
- C08K5/13—Phenols; Phenolates
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/04—Polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/12—Polysiloxanes containing silicon bound to hydrogen
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31652—Of asbestos
- Y10T428/31663—As siloxane, silicone or silane
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004537889A JP2006516302A (ja) | 2002-09-18 | 2003-09-18 | アルキル−水素シロキサンの分解を防止する添加剤 |
EP03752426A EP1573086A4 (en) | 2002-09-18 | 2003-09-18 | ADDITIVES FOR PREVENTING DETERIORATION OF ALKYL-HYDROGEN SILOXANES |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US41165102P | 2002-09-18 | 2002-09-18 | |
US60/411,651 | 2002-09-18 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2004027110A2 true WO2004027110A2 (en) | 2004-04-01 |
WO2004027110A3 WO2004027110A3 (en) | 2006-04-06 |
Family
ID=32030703
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2003/029183 WO2004027110A2 (en) | 2002-09-18 | 2003-09-18 | Additives to prevent degradation of alkyl-hydrogen siloxanes |
Country Status (6)
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1491655A2 (en) | 2003-06-23 | 2004-12-29 | Air Products And Chemicals, Inc. | Stabilizers to inhibit the polymerization of substituted cyclotetrasiloxane |
WO2005004221A2 (en) * | 2003-07-08 | 2005-01-13 | Silecs Oy | Low-k-dielectric material |
GB2405404A (en) * | 2003-08-28 | 2005-03-02 | Advanced Tech Materials | Stabilised cyclosiloxanes for use as precursors for low-dielectric constant thin films |
WO2005087781A1 (ja) * | 2004-03-16 | 2005-09-22 | Sumitomo Chemical Company, Limited | 有機ケイ素系化合物及びその製造方法 |
JP2007149954A (ja) * | 2005-11-28 | 2007-06-14 | Asm Japan Kk | 薄膜形成方法 |
US7342295B2 (en) | 2002-11-21 | 2008-03-11 | Advanced Technology Materials, Inc. | Porogen material |
WO2008074710A1 (de) * | 2006-12-20 | 2008-06-26 | Wacker Chemie Ag | Verfahren zur herstellung von tetramethylcyclotetrasiloxan |
EP2050753A1 (en) * | 2007-10-15 | 2009-04-22 | Air Products and Chemicals, Inc. | Stabilizers to inhibit the polymerization of substituted cyclotetrasiloxane |
US7737291B2 (en) | 2005-01-18 | 2010-06-15 | Adeka Corporation | Composition containing siloxane compound and phenol compound |
EP2256123A3 (en) * | 2005-01-31 | 2011-06-08 | Tosoh Corporation | Cyclic siloxane compound, a material for forming Si-containing film, and its use |
US8053375B1 (en) | 2006-11-03 | 2011-11-08 | Advanced Technology Materials, Inc. | Super-dry reagent compositions for formation of ultra low k films |
US8513448B2 (en) | 2005-01-31 | 2013-08-20 | Tosoh Corporation | Cyclic siloxane compound, a material for forming Si-containing film, and its use |
CN116355007A (zh) * | 2023-03-31 | 2023-06-30 | 京东方科技集团股份有限公司 | 六元杂环结构的有机化合物、电致发光器件及显示装置 |
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RU2319786C2 (ru) * | 2002-06-28 | 2008-03-20 | Смс Демаг Акциенгезелльшафт | Применение разделяющего газа при непрерывном нанесении покрытия погружением в расплав |
JP2005294333A (ja) * | 2004-03-31 | 2005-10-20 | Semiconductor Process Laboratory Co Ltd | 成膜方法及び半導体装置 |
US7871536B2 (en) | 2005-09-12 | 2011-01-18 | Fujifilm Electronic Materials U.S.A., Inc. | Additives to prevent degradation of cyclic alkene derivatives |
WO2007033123A2 (en) * | 2005-09-12 | 2007-03-22 | Fujifilm Electronic Materials U.S.A., Inc. | Additives to prevent degradation of cyclic alkene derivatives |
US7883639B2 (en) * | 2005-09-12 | 2011-02-08 | Fujifilm Electronic Materials, U.S.A., Inc. | Additives to prevent degradation of cyclic alkene derivatives |
JP2007157870A (ja) * | 2005-12-02 | 2007-06-21 | Renesas Technology Corp | 半導体装置及びその製造方法 |
US20080141901A1 (en) * | 2006-12-18 | 2008-06-19 | American Air Liquide, Inc. | Additives to stabilize cyclotetrasiloxane and its derivatives |
ES2426666T3 (es) * | 2007-01-12 | 2013-10-24 | Utilx Corporation | Composición y procedimiento para restaurar un cable eléctrico e inhibir la corrosión en el núcleo conductor de aluminio |
US8173213B2 (en) | 2008-05-28 | 2012-05-08 | Air Products And Chemicals, Inc. | Process stability of NBDE using substituted phenol stabilizers |
TWI490363B (zh) * | 2009-02-06 | 2015-07-01 | Nat Inst For Materials Science | 絕緣膜材料、使用該絕緣膜材料的成膜方法及絕緣膜 |
WO2015157202A1 (en) | 2014-04-09 | 2015-10-15 | Corning Incorporated | Device modified substrate article and methods for making |
US10543662B2 (en) | 2012-02-08 | 2020-01-28 | Corning Incorporated | Device modified substrate article and methods for making |
US9340443B2 (en) | 2012-12-13 | 2016-05-17 | Corning Incorporated | Bulk annealing of glass sheets |
US11091370B2 (en) | 2013-05-02 | 2021-08-17 | Pallidus, Inc. | Polysilocarb based silicon carbide materials, applications and devices |
US9657409B2 (en) | 2013-05-02 | 2017-05-23 | Melior Innovations, Inc. | High purity SiOC and SiC, methods compositions and applications |
US9919972B2 (en) | 2013-05-02 | 2018-03-20 | Melior Innovations, Inc. | Pressed and self sintered polymer derived SiC materials, applications and devices |
US10322936B2 (en) | 2013-05-02 | 2019-06-18 | Pallidus, Inc. | High purity polysilocarb materials, applications and processes |
US11014819B2 (en) | 2013-05-02 | 2021-05-25 | Pallidus, Inc. | Methods of providing high purity SiOC and SiC materials |
US10510576B2 (en) | 2013-10-14 | 2019-12-17 | Corning Incorporated | Carrier-bonding methods and articles for semiconductor and interposer processing |
US10046542B2 (en) | 2014-01-27 | 2018-08-14 | Corning Incorporated | Articles and methods for controlled bonding of thin sheets with carriers |
KR102573207B1 (ko) | 2015-05-19 | 2023-08-31 | 코닝 인코포레이티드 | 시트와 캐리어의 결합을 위한 물품 및 방법 |
CN107810168A (zh) | 2015-06-26 | 2018-03-16 | 康宁股份有限公司 | 包含板材和载体的方法和制品 |
JP6621226B2 (ja) * | 2016-02-15 | 2019-12-18 | 国立研究開発法人産業技術総合研究所 | シロキサン及びその製造方法 |
TW201825623A (zh) | 2016-08-30 | 2018-07-16 | 美商康寧公司 | 用於片材接合的矽氧烷電漿聚合物 |
TWI810161B (zh) | 2016-08-31 | 2023-08-01 | 美商康寧公司 | 具以可控制式黏結的薄片之製品及製作其之方法 |
WO2019118660A1 (en) | 2017-12-15 | 2019-06-20 | Corning Incorporated | Method for treating a substrate and method for making articles comprising bonded sheets |
JP6875336B2 (ja) * | 2018-08-27 | 2021-05-26 | 信越化学工業株式会社 | 成膜方法 |
CN113801155B (zh) * | 2020-06-15 | 2023-10-31 | 中国石油化工股份有限公司 | 适用于制备石英砂防吸附亲水涂层的化学剂及其制备和应用 |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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US4234441A (en) * | 1979-04-27 | 1980-11-18 | Olin Corporation | Silicone oil compositions containing silicate cluster compounds |
US5118735A (en) * | 1990-10-05 | 1992-06-02 | Hercules Incorporated | Organosilicon composition comprising stabilizers |
JPH07145179A (ja) * | 1993-11-26 | 1995-06-06 | Shin Etsu Chem Co Ltd | 低分子量ポリメチルシクロポリシロキサンの安定化方法 |
EP1321469A1 (en) * | 2001-12-21 | 2003-06-25 | Air Products And Chemicals, Inc. | Stabilizers to inhibit the polymerization of substituted cyclotetrasiloxane |
Family Cites Families (15)
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US3998865A (en) * | 1975-03-12 | 1976-12-21 | General Electric Company | Process for the stabilization of hexamethyl-cyclotrisiloxane and the stabilized compositions resulting therefrom |
US5028566A (en) * | 1987-04-10 | 1991-07-02 | Air Products And Chemicals, Inc. | Method of forming silicon dioxide glass films |
DE4123423A1 (de) * | 1991-07-15 | 1993-01-21 | Wacker Chemie Gmbh | Alkenylgruppen aufweisende siloxancopolymere, deren herstellung und verwendung |
US5177142A (en) * | 1991-08-22 | 1993-01-05 | General Electric Company | Silicone release coating compositions |
FR2686091B1 (fr) * | 1992-01-15 | 1994-06-10 | Flamel Tech Sa | Composition a base de polysilane (s). |
US5470800A (en) * | 1992-04-03 | 1995-11-28 | Sony Corporation | Method for forming an interlayer film |
ES2210506T3 (es) * | 1996-11-08 | 2004-07-01 | Rhodia Chimie | Composiciones reticulables que contienen aceites de siliconas funcionalizados y utilizacion de estas composiciones para preparar peliculas de poliuretanos. |
EP0978539A4 (en) * | 1997-04-24 | 2000-04-12 | Kaneka Corp | IMPACT RESISTANT THERMOPLASTIC RESIN COMPOSITION |
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US7108771B2 (en) * | 2001-12-13 | 2006-09-19 | Advanced Technology Materials, Inc. | Method for removal of impurities in cyclic siloxanes useful as precursors for low dielectric constant thin films |
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US7101948B2 (en) * | 2001-12-21 | 2006-09-05 | Air Products And Chemicals, Inc. | Stabilizers to inhibit the polymerization of substituted cyclotetrasiloxane |
TWI317749B (en) * | 2002-02-15 | 2009-12-01 | Kaneka Corp | Graft copolymers and impact-resistant flame-retardant resin compositions containing the same |
AU2003228495A1 (en) * | 2002-04-11 | 2003-10-27 | Honeywell International Inc. | Thermally conductive coating compositions, methods of production and uses thereof |
KR20040106396A (ko) * | 2002-04-30 | 2004-12-17 | 카네카 코포레이션 | 폴리오르가노실록산 함유 그래프트 공중합체 조성물 |
-
2003
- 2003-09-18 JP JP2004537889A patent/JP2006516302A/ja active Pending
- 2003-09-18 TW TW92125785A patent/TWI302908B/zh not_active IP Right Cessation
- 2003-09-18 KR KR1020057004778A patent/KR20050089147A/ko not_active Application Discontinuation
- 2003-09-18 EP EP03752426A patent/EP1573086A4/en not_active Withdrawn
- 2003-09-18 US US10/665,739 patent/US7129311B2/en active Active
- 2003-09-18 WO PCT/US2003/029183 patent/WO2004027110A2/en active Application Filing
-
2006
- 2006-02-24 US US11/361,723 patent/US20060159861A1/en not_active Abandoned
- 2006-07-31 US US11/496,135 patent/US7531590B2/en not_active Expired - Lifetime
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4234441A (en) * | 1979-04-27 | 1980-11-18 | Olin Corporation | Silicone oil compositions containing silicate cluster compounds |
US5118735A (en) * | 1990-10-05 | 1992-06-02 | Hercules Incorporated | Organosilicon composition comprising stabilizers |
JPH07145179A (ja) * | 1993-11-26 | 1995-06-06 | Shin Etsu Chem Co Ltd | 低分子量ポリメチルシクロポリシロキサンの安定化方法 |
EP1321469A1 (en) * | 2001-12-21 | 2003-06-25 | Air Products And Chemicals, Inc. | Stabilizers to inhibit the polymerization of substituted cyclotetrasiloxane |
Non-Patent Citations (1)
Title |
---|
See also references of EP1573086A2 * |
Cited By (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7423166B2 (en) | 2001-12-13 | 2008-09-09 | Advanced Technology Materials, Inc. | Stabilized cyclosiloxanes for use as CVD precursors for low-dielectric constant thin films |
US7300995B2 (en) | 2001-12-21 | 2007-11-27 | Air Products And Chemicals, Inc. | Stabilizers to inhibit the polymerization of substituted cyclotetrasiloxane |
US7342295B2 (en) | 2002-11-21 | 2008-03-11 | Advanced Technology Materials, Inc. | Porogen material |
EP1491655A2 (en) | 2003-06-23 | 2004-12-29 | Air Products And Chemicals, Inc. | Stabilizers to inhibit the polymerization of substituted cyclotetrasiloxane |
EP1491655A3 (en) * | 2003-06-23 | 2007-06-20 | Air Products And Chemicals, Inc. | Stabilizers to inhibit the polymerization of substituted cyclotetrasiloxane |
WO2005004221A3 (en) * | 2003-07-08 | 2005-06-02 | Silecs Oy | Low-k-dielectric material |
US7646081B2 (en) | 2003-07-08 | 2010-01-12 | Silecs Oy | Low-K dielectric material |
WO2005004221A2 (en) * | 2003-07-08 | 2005-01-13 | Silecs Oy | Low-k-dielectric material |
GB2405404A (en) * | 2003-08-28 | 2005-03-02 | Advanced Tech Materials | Stabilised cyclosiloxanes for use as precursors for low-dielectric constant thin films |
GB2405404B (en) * | 2003-08-28 | 2008-07-16 | Advanced Tech Materials | Stabilized cyclosiloxanes for use as CVD precursors for low-dielectric constant thin films |
WO2005087781A1 (ja) * | 2004-03-16 | 2005-09-22 | Sumitomo Chemical Company, Limited | 有機ケイ素系化合物及びその製造方法 |
DE112005003322B4 (de) * | 2005-01-18 | 2016-05-12 | Adeka Corp. | Zusammensetzung, die eine Siloxanverbindung und eine Phenolverbindung enthält und deren Verwendung |
US7737291B2 (en) | 2005-01-18 | 2010-06-15 | Adeka Corporation | Composition containing siloxane compound and phenol compound |
EP2256123A3 (en) * | 2005-01-31 | 2011-06-08 | Tosoh Corporation | Cyclic siloxane compound, a material for forming Si-containing film, and its use |
US8513448B2 (en) | 2005-01-31 | 2013-08-20 | Tosoh Corporation | Cyclic siloxane compound, a material for forming Si-containing film, and its use |
JP2007149954A (ja) * | 2005-11-28 | 2007-06-14 | Asm Japan Kk | 薄膜形成方法 |
US8053375B1 (en) | 2006-11-03 | 2011-11-08 | Advanced Technology Materials, Inc. | Super-dry reagent compositions for formation of ultra low k films |
WO2008074710A1 (de) * | 2006-12-20 | 2008-06-26 | Wacker Chemie Ag | Verfahren zur herstellung von tetramethylcyclotetrasiloxan |
EP2050753A1 (en) * | 2007-10-15 | 2009-04-22 | Air Products and Chemicals, Inc. | Stabilizers to inhibit the polymerization of substituted cyclotetrasiloxane |
CN116355007A (zh) * | 2023-03-31 | 2023-06-30 | 京东方科技集团股份有限公司 | 六元杂环结构的有机化合物、电致发光器件及显示装置 |
Also Published As
Publication number | Publication date |
---|---|
EP1573086A4 (en) | 2012-10-03 |
US7531590B2 (en) | 2009-05-12 |
TWI302908B (en) | 2008-11-11 |
EP1573086A2 (en) | 2005-09-14 |
TW200404769A (en) | 2004-04-01 |
KR20050089147A (ko) | 2005-09-07 |
WO2004027110A3 (en) | 2006-04-06 |
US20040127070A1 (en) | 2004-07-01 |
JP2006516302A (ja) | 2006-06-29 |
US20060270787A1 (en) | 2006-11-30 |
US20060159861A1 (en) | 2006-07-20 |
US7129311B2 (en) | 2006-10-31 |
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