Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
  • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
  • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
  • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
  • H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
  • B65G—TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
  • B65G49/00—Conveying systems characterised by their application for specified purposes not otherwise provided for
  • B65G49/05—Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles
  • B65G49/07—Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles for semiconductor wafers Not used, see H01L21/677
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
  • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y10S414/00—Material or article handling
  • Y10S414/135—Associated with semiconductor wafer handling
  • Y10S414/141—Associated with semiconductor wafer handling includes means for gripping wafer

Definitions

• the present invention relates to bonded structures for use in semiconductor processing environments and, more particularly, to increased strength bonded structures for use in such environments.
• the structures exposed to the high temperatures involved in semiconductor processing must be constructed from materials that can withstand the high temperatures.
• robotic end-effectors which are commonly used to transport wafers between high temperature process chambers, are often fabricated from quartz or ceramic materials.
• Such materials although able to withstand the high temperatures involved in semiconductor processing, are typically brittle, and the structures of which they are made are often relatively fragile.
• End-effectors are often broken during packaging, transportation and use. Many such end-effectors are formed of several plate-like layers which overlap one another and are bonded together. When the end-effectors are subjected to bending loads during packaging, transportation, or use, the end-effectors tend to fail at the edges or ends of the layers, where the cross-sectional area of the end-effector changes abruptly. Stress concentrations develop at these abrupt changes in cross-sectional area, causing the end-effectors to break at the stress concentrations when bending loads are applied.
• a structure for use in a semiconductor processing environment comprising a first quartz or ceraminc plate and a second quartz or ceramic plate bonded to the first plate.
• a distal end of the second plate extends beyond a distal end of the first plate.
• the distal end of the first plate is tapered along a length at least one-half of a width of the first plate adjacent the tapered distal end of the first plate.
• a structure for use in a semiconductor processing environment comprising a first elongated plate and a second elongated plate bonded to the first plate.
• a distal end of the second plate extends beyond a distal end of the first plate.
• a cross- sectional area of the first plate gradually decreases towards the distal end of the first plate along a length at least one-half of a width of the first plate adjacent the distal end of the first plate.
• a structure for transporting a semiconductor wafer comprising an arm portion having a distal end, and a head portion having a curved proximal edge.
• a structure for transporting a semiconductor wafer comprising an elongated arm portion and a head portion.
• the arm portion includes a lower plate and an upper plate bonded to the lower plate.
• a distal end of the lower plate extends beyond a distal end of the upper plate.
• the head portion is bonded to the lower plate and has a proximal edge that extends across a surface of the lower plate. At least one of the distal end of the upper plate and the proximal edge of the head portion are tapered.
• FIGURE 1 is a schematic top plan view of an exemplary bonded structure having certain features and advantages in accordance with the present invention
• FIGURE 2 is a schematic side elevational view of the structure of FIGURE 1;
• FIGURE 3 is a cross-sectional view of the structure of FIGURE 1 taken along the plane 3-3 of FIGURE 2;
• FIGURE 4 is a cross-sectional view of the structure of FIGURE 1 taken along the plane 4-4 of
• FIGURE 2
• FIGURE 5 is a cross-sectional view of the structure of FIGURE 1 taken along the plane 5-5 of FIGURE 2;
• FIGURE 6 is a perspective view of one embodiment of an end-effector having certain features and advantages in accordance with the present invention.
• FIGURE 7 is a side elevational view of the end-effector of FIGURE 3;
• FIGURE 8 is an exploded perspective view of the arm portion of the end-effector of FIGURE 3;
• FIGURE 9 is a top plan view of the end-effector of FIGURE 3;
• FIGURE 10 is top plan view of the lower plate of the arm portion of FIGURE 5 illustrating a preferred pattern for the bonding material applied between the upper plate and the lower plate of the arm portion of the end-effector;
• FIGURE 11 is a top plan view of the end-effector of FIGURE 3 illustrating a preferred bonding line pattern for the bonding material between the arm portion and the head portion of the end-effector.
• a structure 20 is provided for use in a semiconductor processing environment, including a first plate 24 and a second plate 26 bonded to the first plate 24.
• the first and second plates 24, 26 may comprise quartz or a ceramic material suitable for use in the processing environment.
• the proximal end 30 of the first plate 24 may be adapted to be connected to an object within the processing environment, such as a robot arm (not shown).
• the distal end 32 of the second plate 26 extends beyond the distal end 34 of the first plate 24.
• the distal end 34 of the first plate 24 is tapered towards the distal end 32 of the second plate 26.
• the distal end 34 of the first plate 24 is tapered along a length L1 at least one-half of the width W1 of the first plate 24 adjacent the tapered distal end 34 of the first plate 24.
• the distal end 34 of the first plate 24 is curved towards the distal end 32 of the second plate 26 along a generally circular arc A1 having a diameter approximately equal to the width W1 of the first plate 24 adjacent the tapered distal end 34.
• the distal end 34 of the first plate 24 may have a parabolic or other tapered shape.
• the tapering of the distal end 34 of the first plate 24 minimizes stress concentrations along the structure 20 when a bending load is applied to the structure 20, Although the total thickness of the structure 20 decreases abruptly at the distal end 34 of the first plate 24, the cross-sectional area of the structure 20 taken in a transverse plane perpendicular to the plane of the structure 20 decreases only gradually as the width of the first plate 24 decreases towards the distal end 34.
• the area of a cross-section of the structure 20 taken in the plane 3-3 is somewhat greater than the area of a cross-section taken in the plane 4-4 which, in turn, is somewhat greater than the area of a cross-section taken in the plane 5-5.
• bonded structure 20 illustrated in FIGURES 1-5 is merely exemplary.
• a number of structures used in semiconductor processing may be constructed or modified in accordance with the present invention, particularly quartz or ceramic structures.
• Such structures include, but are not limited to, robot end-effectors (e.g., Bernoulli wands, paddles, spatulas, vacuum wands, etc.) and other structures used in semiconductor processing that are commonly subjected to bending loads.
• FIGURES 6-11 One embodiment of an end-effector 100 having features in accordance with the present invention is illustrated in FIGURES 6-11.
• the end-effector 100 is a Bernoulli-type end-effector.
• the end-effector 100 of the illustrated embodiment comprises an elongated arm portion 104 including an upper plate 130 and a lower plate 132, and a generally disc-shaped head portion 108.
• the arm portion 104 has a proximal end 110, a distal end 112, a first side 114 and a second side 116.
• the proximal end 110 of the arm portion 104 is adapted to be connected to a robot (not shown).
• the robot may be programmed to move the end-effector 100 in a predetermined manner to transport semiconductor wafers within a wafer processing environment.
• the end-effector 100 preferably is fabricated from a material suitable for the high temperature processing environment in which the end-effector 100 is to be employed, such as quartz or a ceramic material.
• the end-effector 100 comprises quartz.
• the end-effector 100 is regularly subjected to temperatures in excess of 600°C, and often greater than 800°C.
• the upper plate 132 of the arm portion 104 overlaps the lower plate 130.
• the lower plate 130 is longer than the upper plate 132, so that a distal end 136 of the lower plate 130 extends beyond a distal end 140 of the upper plate 132.
• a recessed area 148 is provided beneath the distal end 136 of the lower plate 130. The thickness of the lower plate 130 is thus reduced at the distal end 136.
• a pair of fingers 144 are provided at the distal end 136 of the lower plate 130 (see also FIGURE 6).
• a longitudinal groove 160 preferably is formed in at least one of the facing surfaces of the upper and lower plates 132, 130.
• the groove 160 is formed in the lower plate 130,
• a first opening 164 is provided through the lower plate 130 at a distal end of the groove 160.
• a second opening 166 is provided through the upper plate 132 at a proximal end 170 of the upper plate 132.
• the head portion 108 of the end- effector 100 comprises a bottom plate 180 and a top plate 182 overlapping the bottom plate 180.
• the bottom plate 180 is larger than the top plate 182 and extends laterally and distally beyond the top plate 182,
• a plurality of grooves 190 preferably are formed in at least one of the facing surfaces of the top and bottom plates 182, 180.
• the grooves 190 are formed in the bottom plate 180.
• a main groove 192 extends longitudinally along the center of the bottom plate 180, and a plurality of branch grooves 194 extend laterally from the main groove 192.
• An opening 200 is provided through the top plate 182 at a proximal end of the main groove 192.
• Openings 204 are further provided through the bottom plate 180 at various locations along the branch grooves 194.
• the main groove 192 forms a main gas passage 210 and the branch grooves 194 form branch passages 212 extending along the head portion 108 between the top and bottom plates 182, 180.
• the upper and lower plates 132, 130 of the arm portion 108 are preferably bonded together with a suitable bonding material, such as an adhesive glass frit material.
• a suitable bonding material such as an adhesive glass frit material.
• One preferred glass frit material is available from Corning, Inc. as product number 691045-7070-000.
• the bonding material has a melting temperature less than the melting temperature of the material or materials from which the upper and lower plates 132, 130 are made.
• the bonding material may be applied to one or both of the upper and lower plates 132, 130, and is preferably applied through a silkscreen (not shown) in a predetermined pattern.
• the bonding material is applied to the lower plate 130 in a broken line pattern 220, as illustrated in FIGURE 10, to prevent air from being trapped and creating air pockets between the upper and lower plates 132, 130 during bonding.
• the upper plate 132 is then positioned on top of the lower plate 130, and the arm portion 104 is heated to a temperature sufficient to melt the bonding material (but below the melting temperature of the upper and lower plates 132, 130) and subsequently cooled to bond the plates 132, 130 together.
• top and bottom plates 182, 180 of the head portion 108 may be bonded together in a similar manner. Bonding material may be applied through a silkscreen (not shown) to one or both of the upper and lower plates 182, 180 of the head portion 108. The top plate 182 is then positioned on the bottom plate 180, and the head portion 108 is heated to a temperature sufficient to melt the bonding material and then cooled to bond the plates 182, 180 together.
• the distal end 112 of the arm portion 104 is similarly bonded to the head portion 108.
• the lower plate 130 of the arm portion 104 is bonded to the top plate 182 of the head portion 108.
• Bonding material may be applied through a silkscreen (not shown) to one or both of the arm portion 104 and the head portion 108 in a predetermined pattern.
• One preferred bonding material pattern 230 is illustrated in FIGURE 11.
• the distal end 112 of the arm portion 104 is then positioned over a proximal edge 250 of the head portion 108 so that the fingers 144 at the distal end 112 of the arm portion 104 extend along the peripheral surface of the head portion 108.
• the opening 164 at the distal end of the groove 160 in the arm portion 104 is aligned with the opening 200 at the proximal end of the main groove 192 in the head portion 108, thereby connecting the gas passage 176 of the arm portion 104 with the main gas passage 210 of the head portion 108.
• the end effector 100 is heated to a temperature sufficient to melt the bonding material and subsequently cooled to bond the arm portion 104 and the head portion 108 together.
• the proximal edge 250 of the head portion 108 extends across the arm portion 104 from the first side 114 of the arm portion 104 to the second side 116.
• the proximal edge 250 of the head portion 108 is tapered towards the proximal end 110 of the arm portion 104, Preferably, as illustrated in FIGURE 11, the proximal edge 250 of the head portion 108 extends along a generally circular arc A2. Alternatively, however, the proximal edge 250 of the head portion 108 may have a parabolic or other tapered shape. As illustrated in FIGURE 11, some of the bonding material preferably is applied adjacent the tapered proximal edge 250 of the head portion 108 to ensure that the arm portion 104 and the head portion 108 are properly joined at the proximal edge 250.
• the distal end 140 of the upper plate 132 of the arm portion 104 is tapered towards the distal end 136 of the lower plate 130 of the arm portion 104,
• the distal end 140 of the upper plate 132 is tapered along a length L3 at least one-half of the width W3 of the upper plate 132 adjacent the tapered distal end 140.
• the distal end 140 of the upper plate 132 is curved along a generally circular arc A3 having a diameter approximately equal to the width W3 of the upper plate 132 adjacent the distal end 140.
• the distal end 140 of the upper plate 132 may have a parabolic or other tapered shape.
• Some of the bonding material preferably is applied adjacent the tapered distal end 140 of the upper plate 132 (see the bonding material pattern 220 illustrated in FIGURE 10) to ensure that the upper plate 132 and lower plate 130 are properly joined at the distal end 140.
• the proximal edge 250 of the head portion 108 and the distal end 140 of the upper plate 132 overlap one another.
• a gas such as nitrogen
• a gas source not shown
• the gas enters the end-effector 100 through the opening 166 at the proximal end 110 of the arm portion 104, and flows through the gas passage 176 of the arm portion 104 to the gas passages 210, 212 of the head portion.
• the gas exits the end-effector 100 through the openings 204 from the branch passages 212.
• the robot to which the proximal end 110 of the arm portion 104 is connected moves the head portion 108 of the end-effector into position over the surface of a wafer (not shown).
• the jets of gas exiting from the openings 204 in the branch passages 212 create a gas flow pattern above the wafer that causes the pressure immediately above the wafer to be less than the pressure immediately below the wafer, This pressure imbalance causes the wafer to experience an upward "lift” force.
• the same jets that produce the lift force produce an increasingly larger repulsive force that substantially prevents the wafer from contacting the end-effector 100. As a result, it is possible to suspend the wafer below the end-effector 100 in a non- contacting manner.
• a bending load is generated by the weight of the end-effector 100.
• the end-effector 100 may also be subjected to bending loads during packing and transportation. When a bending load is applied to the end-effector 100, stress concentrations develop along the length of the end-effector 100 at any abrupt changes in cross-sectional area.
• the tapering of the proximal edge 250 of the head portion 108 and of the distal end 140 of the upper plate 132 of the arm portion 104 serve to minimize stress concentrations along the end-effector 100 when bending loads are applied to the end-effector 100.
• the thickness of the end-effector 100 changes abruptly at the proximal edge 250 of the head portion 108 and at the distal end 140 of the upper plate 132 of the arm portion 104
• the cross-sectional area of the end-effector 100 taken in a transverse plane perpendicular to the plane of the end-effector 100 changes only gradually with the width of the proximal edge 250 of the head portion 108 and the distal end 140 of the upper plate 132.

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• Engineering & Computer Science (AREA)
• Physics & Mathematics (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• General Physics & Mathematics (AREA)
• Manufacturing & Machinery (AREA)
• Computer Hardware Design (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Power Engineering (AREA)
• Robotics (AREA)
• Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Priority Applications (1)

Applications Claiming Priority (2)

Publications (2)

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ID=31946304

Family Applications (1)

Country Status (4)

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Family Cites Families (14)

• 2002
  • 2002-08-20 US US10/225,545 patent/US6929299B2/en not_active Expired - Lifetime
• 2003
  • 2003-07-24 KR KR1020057002722A patent/KR101009327B1/ko not_active Expired - Lifetime
  • 2003-07-24 JP JP2004530845A patent/JP4575773B2/ja not_active Expired - Lifetime
  • 2003-07-24 WO PCT/US2003/023186 patent/WO2004019375A2/en not_active Ceased

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