WO2003094222A1 - Procede de collage et dispositif de collage - Google Patents

Procede de collage et dispositif de collage Download PDF

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Publication number
WO2003094222A1
WO2003094222A1 PCT/JP2003/005491 JP0305491W WO03094222A1 WO 2003094222 A1 WO2003094222 A1 WO 2003094222A1 JP 0305491 W JP0305491 W JP 0305491W WO 03094222 A1 WO03094222 A1 WO 03094222A1
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WIPO (PCT)
Prior art keywords
resin
substrate
bonding
mounting member
heating
Prior art date
Application number
PCT/JP2003/005491
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English (en)
Japanese (ja)
Inventor
Akira Yamauchi
Original Assignee
Toray Engineering Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toray Engineering Co., Ltd. filed Critical Toray Engineering Co., Ltd.
Priority to KR1020047016361A priority Critical patent/KR100978697B1/ko
Publication of WO2003094222A1 publication Critical patent/WO2003094222A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/75—Apparatus for connecting with bump connectors or layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29399—Coating material
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    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
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    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
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    • H01L2924/01004—Beryllium [Be]
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    • H01L2924/01079—Gold [Au]
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    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
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    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
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    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
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    • H01L2924/351—Thermal stress
    • H01L2924/3511—Warping

Definitions

  • the present invention relates to a bonding method for mounting a mounting member such as a semiconductor element or a surface mounted component on a substrate such as a resin substrate or a glass substrate and a mounting method thereof, and in particular, to accurately mount the mounting member on a substrate.
  • a mounting member such as a semiconductor element or a surface mounted component on a substrate
  • a mounting method thereof and in particular, to accurately mount the mounting member on a substrate.
  • a mounting member for example, a semiconductor chip or the like
  • a resin such as an anisotropic conductive film (ACF) or a non-conductive resin (ACF) is provided between the substrate and the chip.
  • ACF anisotropic conductive film
  • ACF non-conductive resin
  • Such a bonding method has the following problems. For example, if a chip is mounted on a board by heating and curing while applying pressure to AC F, NCP, etc., when the resin is cured at a high temperature, an art gas is generated from the resin, and the chip mounting shown in FIGS. 15 and 16 is performed. As shown in the cross-sectional view of FIG. 16, a void 32 (see FIG. 15) covering the periphery of the bump 31 and a void 32 extending between the bump 31 and the substrate electrode 33 (see FIG. 16). Shown) occurs. The presence of the pits 32 causes problems such as a decrease in bonding strength and poor conduction, and an explosion of the pits 32 when the temperature rises. In addition, when cracks and gaps occur as well as resistance and the resistance increases, causing poor conduction, There are also problems.
  • both the chip 4 and the substrate 2 are heated by heating during chip mounting.
  • the substrate 2 is cooled to room temperature after this heating, the substrate 2 itself warps upward as indicated by the arrow in FIG. 19 due to the difference in linear expansion coefficient between the two members.
  • the resin is loosened and a gap is formed between the conductive particles 34 and the bumps 31 or the conductive particles 34 interposed between the substrate electrodes 33 and the bumps 31 are removed.
  • the resistance value between the bump 31 and the substrate electrode 33 increases due to a change in the bonding area or the like.
  • the present invention has been made in view of such circumstances, and a main object of the present invention is to provide a bonding method and an apparatus for accurately mounting a mounting member on a substrate.
  • Measures to prevent air entrapment include increasing the viscosity of the resin, making it difficult for air to enter the resin.
  • the resin is still in a softened state. If the pressure is released by the pressurizing means while the resin is not cured but softened, the air in which the pressure was applied to the inside of the resin instantly expands when the pressure is released (tens of tens). Poids 32 (shown in Fig. 15) that cover the periphery of the bumps by swelling by a factor of two) and voids 32 that span between the bumps (see arrows in Figs. 20 and 20). (Shown in Fig. 21). There was a problem when moisture and the like accumulated in the poid 32 and short-circuited.
  • the conductive particles on the bumps are pressed by applying pressure from above the chip (gold-nickel, etc. on the polymer surface).
  • the electrical connection is maintained in a state where it is elastically deformed and bites into the bump.
  • the resin is still in a softened state immediately after the pressurization by the pressurizing means is released, so if the substrate is warped, it has been stretched flat by pressurization.
  • the resin viscosity loses to the elastic stress, and there is a part where the gap increases between the bump and the electrode. With the increase in the gap, the elastic deformation of the conductive particles is restored, as shown in FIGS.
  • a space is formed between the concave portion of the bump portion formed by the biting of the conductive particles and the conductive particles 34, or the resin flows into this space, and the contact area is reduced. As a result, the resistance is increased. Become. In other words, the problem of the formation of voids and the state of particle pressure contact occurs when the resin is in the softened state before the glass transition point (Tg temperature). It was found that this was caused by releasing the pressure.
  • the air contained inside the resin does not expand even if the pressure from the upper part of the chip is released, and in the case of ACF, etc., the conductive particles are released when the pressure is released.
  • the pressure is released after cooling the resin below the T g temperature so that the resin viscosity does not lose to the elastic stress due to restoration.
  • the resin in a bonding method in which a resin is interposed between a mounting member and a substrate and the mounting member is mounted on the substrate, the resin is heated during the process of pressing the mounting member onto the substrate by the pressing means.
  • the bonding method of the present invention in the process of interposing a resin between the mounting member (for example, a chip or the like) and the substrate and pressing the mounting member against the substrate by the pressing means, at least one of the mounting member and the substrate.
  • the resin is heated and hardened while heating by a heating means, and the mounting member is thermocompression bonded to the substrate.
  • the heating means is cooled, and then the pressure by the pressing means from above the chip is released. That is, the resin itself is also cooled with the cooling of the heating means. Therefore, the pressure from above the chip is released when the resin is substantially cured, so that expansion due to removal of the external pressure of the air contained inside the resin in the pressurized state is suppressed.
  • the cooling step is performed by using a gas for the resin to be used. It is preferable to cool to the vicinity of the lath transition point.
  • the cooling means in the cooling process, the cooling means is cooled, and the resin joining the substrate and the mounting member is cooled to the glass transition point. Therefore, the pressure of the pressurizing means is released when the resin is almost completely hardened, so that expansion due to removal of the external pressure of the air contained inside the resin in the pressurized state is suppressed. Can be. As a result, voids generated around the bumps or between the bumps due to the expansion of the air can be prevented, so that the conduction of the bumps to the substrate electrode due to the voids, a short circuit between the bumps, and the like can be prevented. Can be prevented.
  • the temperature of the resin is near the glass transition point, and the amount of thermal expansion of the substrate and the mounting member from room temperature. It is preferable to adjust at least one of the temperature of the substrate and the mounting member so that the values are substantially equal.
  • the temperature of at least one of the substrate and the mounting member is adjusted so that the resin temperature becomes close to the glass transition point, and at this time, the thermal expansion of the substrate and the mounting member from room temperature becomes substantially equal. Therefore, it is possible to avoid a bonding defect and a defective resistance value that occur when the mounting member and the substrate are warped due to a difference in shrinkage between the substrate and the mounting member.
  • the thermal expansion amount of the substrate means, for example, the thermal expansion amount of the substrate portion corresponding to the length of a chip as a mounting member.
  • the temperature of the substrate and the mounting member are preferably adjusted by at least one of cooling the mounting member and heating the substrate.
  • the mounting member when the mounting member is directly heated from the mounting member side and applied to the substrate, the temperature increases in the order of the distance from the heating means, that is, in the order of the mounting member, the resin, and the substrate. Further, since the substrate side is not heated, the substrate itself has a heat radiation effect, and the temperature difference between the mounting member and the substrate increases. In this case, the mounting member side Cool the substrate, or heat the substrate while naturally cooling or actively cooling the substrate side to the atmosphere, so that the resin temperature is close to the glass transition point so that the difference in thermal expansion between the mounting member and the substrate is eliminated. Adjust the temperature. Therefore, the same effects as described above can be obtained.
  • the heating means is cooled such that the glass transition point of the resin used is + 20 ° C. or lower.
  • a resin is interposed between the mounting member and the substrate, and pressure is applied by the pressing means, and the mounting member is heated and pressed on the substrate while being heated by the heating means.
  • the heating means is cooled to a temperature not higher than the glass transition point of the resin to be used by plus or minus 20 ° C. With this cooling, the resin itself is also cooled, reaching a substantially cured state. Therefore, the same effects as described above can be obtained.
  • the bonding method of the present invention is a bonding method in which a resin is interposed between a mounting member and a substrate and the mounting member is mounted on the substrate, wherein the resin is heated at a temperature lower than a temperature at which the resin itself generates gas by heating.
  • the resin is heated at a temperature lower than the temperature at which the resin itself generates gas by heating, and then the resin is heated and cured at a temperature higher than the heating temperature. Therefore, the resin is substantially cured in a state where no gas is generated, and the temperature is increased in a state where the viscosity is high. At this time, even if gas is generated, the viscosity is higher than the gas generation stress, so that generation of voids and the like can be prevented.
  • the set temperature in the first heating step is less than 190 ° C. and the set temperature in the second heating step is 190 ° C. or more.
  • the predetermined time from the first heating process to the second overheating process is within 20 seconds. It is preferred that
  • the temperature of the first heating process is set to be lower than 190 ° C and the temperature of the second heating process is set to be 190 ° C or higher, or from the first heating process to the second heating process.
  • the time is set within 20 seconds, the resin becomes almost cured in a state where no gas is generated, and the temperature is raised in a state where the viscosity is high.
  • the viscosity is higher than the gas generation stress, so that generation of voids and the like can be prevented.
  • the resin is cooled to near the glass transition point.
  • the heated resin is cooled to a glass transition point. Therefore, as a mounting member, for example, the voids generated around the bumps or between the bumps that occurred in the case of the chip do not expand when the pressure is released, and the resin does not crack due to distortion. Can be completely cured.
  • a temporary compression bonding process of temporarily bonding the mounting member to the substrate in a process from mounting the mounting member on the substrate to heating and curing the resin to fix the mounting member to the substrate, a temporary compression bonding process of temporarily bonding the mounting member to the substrate; It is preferable to divide the process into a final pressure bonding process in which the resin is almost completely cured and fix the mounting member to the substrate, the temporary pressure bonding process being a first heating process, and the final pressure bonding process being a second heating process.
  • the productivity can be improved by dividing the process into the temporary compression bonding process and the final compression bonding process.
  • the productivity can be further improved by using multiple heads for the final press bonding.
  • the bonding method of the present invention is a bonding method of mounting a mounting member on a substrate by interposing a resin between the mounting member and the substrate, wherein the mounting member is mounted at a predetermined position where the resin is applied on the substrate.
  • a pre-compression process in which the mounting member is pre-compressed in a state where the resin applied to that location has been preheated and softened, and the pre-pressed resin at the mounting member joint is further heated and cured to form a substrate.
  • a final pressure bonding step for fixing the mounting member The mounting member is mounted on a state in which the resin applied on the substrate is heated in advance.
  • the resin is softened by heating, if the resin is mounted while being pressed against the resin, the air entrained during mounting can easily escape from between the mounting member and the resin. Therefore, it is possible to reduce air entrapped at the time of mounting the mounting member.
  • the heating temperature of the resin in the temporary press-bonding process is set in the range of 60 ° C. to 120 ° C., and the heating of the resin in the temporary press-bonding process is performed on the back side of the substrate. It is preferable to supply the hot air blow to the resin from above the substrate for the heating of the resin in the temporary compression process, or to provide the temporary compression process and the final compression process continuously or separately. .
  • the bonding method of the present invention is a bonding method in which a resin is interposed between a mounting member and a substrate, and the mounting member is mounted on the substrate.
  • the contact speed at the time is set to 3 ⁇ 41 O mm / s or less.
  • the mounting member is mounted at a predetermined position where the resin is applied on the substrate at a grounding speed of the mounting member to the substrate of 10 mmZs or less, and the mounting member is loosely pressed against the resin.
  • the air caught between the mounting member and the resin during the pressing process can easily escape.
  • the resin is preferably a resin mixed with conductive particles.
  • a mounting member for example, a chip
  • the conductive particles present between the bump on the chip and the substrate electrode are elastically deformed.
  • the resin is cooled to a substantially hardened state, so that it is possible to prevent the conductive particles from restoring the natural deformation, and to keep the contact area of the conductive particles with the chip and the substrate constant.
  • the bonding apparatus of the present invention is a bonding apparatus that mounts a mounting member on a substrate by interposing a resin between the mounting member and the substrate.
  • a holding table a pressurizing means for pressing the mounting member to a predetermined portion of the held substrate, a heating means for heating the pressurized mounting member and heating and curing the resin, and a pressing state for the mounting member.
  • a cooling means for cooling the heating means.
  • the mounting member is pressurized by the pressing unit via the resin at a predetermined position on the substrate placed and held on the holding table, and is pressed against the substrate while being heated by the heating unit. Then, after the heating means for heating the mounting member is cooled, the pressurization of the mounting member is released. Therefore, the resin itself is cooled with the cooling of the heating means, and the resin is almost completely cured, so that voids generated around the bumps or between the bumps due to the expansion of the air can be prevented. This can prevent poor conduction between the bumps and the substrate electrode and short-circuits between the bumps.
  • the bonding apparatus of the present invention preferably includes a temperature control means for controlling the cooling temperature of the cooling means so as to be equal to or lower than the glass transition point of each resin used, that is, + 20 ° C or less.
  • the temperature is controlled so that the cooling of the cooling means is equal to or lower than the glass transition point of each resin used, that is, plus or minus 20 ° C., and the above-described effects can be obtained.
  • the cooling means is provided with a through hole serving as an air-flow path in the heating means, and a blowing means for blowing air from the outside, and a first flow path provided inside the heating means.
  • An air supply means for supplying air to the first flow path, a cooling member for heat radiation attached to an outer periphery of the heating means, or a second flow path provided inside the heating means.
  • a cooling water supply means for supplying cooling water to the second flow path, and it is preferable that the second flow path faces a heater member having a built-in heater pattern.
  • a heating means is provided on the holding table side, and the temperature of the substrate held on the holding table varies with the resin used. It is preferable to control the temperature of the heating means so as to be equal to or lower than the glass transition point of 20 ° C.
  • the substrate placed and held on the holding table is heated by the heating means provided on the holding table side.
  • the holding table is set so that the glass transition point of each resin used to mount the mounting member is equal to or lower than + 20 ° C, so that there is no temperature difference between the mounting member and the board during cooling. The warpage of the substrate caused by the difference between the linear expansion coefficients of the two members can be prevented.
  • the bonding apparatus of the present invention when the resin is cooled near the glass transition point, the temperature of the resin is near the glass transition point, and the amounts of thermal expansion of the substrate and the mounting member from room temperature become substantially equal. It is preferable to provide a cooling means and a temperature control means for controlling the heating means on the holding table side based on the temperature of the mounting member and the substrate so as to adjust the temperature of at least one of the substrate plate and the mounting member.
  • the temperature of the resin is adjusted so that the resin temperature becomes close to the glass transition point during the cooling process and the amounts of thermal expansion of the substrate and the mounting member from room temperature become substantially equal. Therefore, as a method of controlling the temperature, for example, each temperature of the mounting member, the substrate, and the resin is controlled based on a temperature deviation obtained by comparing a reference value obtained by a preliminary test with an actually measured value detected during cooling. The conditions are set in advance.
  • the bonding apparatus of the present invention is a bonding apparatus for mounting a mounting member on a substrate by interposing a resin between the mounting member and the substrate, wherein the holding table mounts and holds the substrate; Adjusting the grounding speed of the mounting means to position and mount the mounting member at the predetermined location where the resin is applied on the printed board, and the mounting means when mounting the mounting member to the board to 1 Omm / sec or less Speed control means.
  • the mounting member is positioned and mounted by the mounting means at a predetermined location on the substrate held on the holding table where the resin is applied.
  • This mounting member is When mounted, it is controlled by the speed control means so that the contact speed of the mounting means is 10 mm, second or less. Therefore, the above effects can be obtained.
  • FIG. 1 is a perspective view showing a schematic configuration of the main crimping apparatus according to the first embodiment
  • FIG. 2 is a front view showing a configuration of a main part of the head according to the first embodiment
  • FIG. 3 is a side view showing a configuration of a main part of the head according to the first embodiment
  • FIG. 4 is a perspective view showing a main part configuration of a ceramic heater
  • FIG. 5 is a flowchart showing a bonding method
  • FIG. 6 is a view showing a temperature control profile of a head
  • FIG. 7 is a perspective view showing a schematic configuration of a bonding apparatus according to the second embodiment
  • FIG. 8 is a front view showing a main part configuration around a head according to the second embodiment
  • FIG. 9 is a flow chart showing a bonding method using the device of the second embodiment.
  • FIG. 10 is a diagram showing a temperature control profile of a head.
  • FIG. 11 is a perspective view showing a main part configuration of a head of a first modification
  • FIG. FIG. 13 is a side view showing a configuration of a main part of a head of a modified example
  • FIG. 13 is a front view showing a main part configuration of a head of a second modified example
  • FIG. FIG. 15 is a side view showing a configuration of a main part of a head of a third modified example.
  • FIG. 15 is a cross-sectional view when a chip is bonded to a substrate by a conventional method.
  • FIG. 16 is a cross-sectional view when a chip is bonded to a substrate by a conventional method.
  • FIG. 17 is a cross-sectional view when a chip is bonded to a substrate by a conventional method.
  • FIG. 18 is a sectional view taken along the line A--A of FIG.
  • FIG. 19 is a cross-sectional view when a chip is bonded to a substrate by a conventional method.
  • FIG. 20 is a cross-sectional plan view when a chip is bonded to a substrate by a conventional method.
  • FIG. 21 is a longitudinal sectional view when viewed from the direction of arrow X in FIG. 20 when a chip is bonded to a substrate by a conventional method
  • FIG. 22 is a diagram showing the results of an experiment performed using the example apparatus.
  • thermosetting resin such as ACP, ACF, NCP, NCF (Non-Conductive film)
  • the “mounting member” in the present invention includes, for example, IC chips, semiconductor chips, optical elements, surface mount components, chips, wafers, TCP (Tape Carrier Package), FPC (Flexible Printed Circuit), and the like. Regardless of the type or size, it shows all forms of bonding to the substrate, including chip on glass (COG), chip bonding to flat display panels, and ⁇ LB ( Outer Lead Bonding).
  • COG chip on glass
  • ⁇ LB Outer Lead Bonding
  • the “substrate” in the present invention refers to all forms on the side to be bonded to a mounting member regardless of the type of a resin substrate, a glass substrate, a film substrate, a chip, a wafer, or the like.
  • FIG. 1 is a perspective view showing a schematic configuration of a final bonding apparatus which is a bonding apparatus according to the present invention
  • FIG. 3 is a front view showing a main part configuration of a head part of the apparatus
  • FIG. 3 is a side view showing a main part configuration of a head part of the embodiment apparatus.
  • a main crimping apparatus 1 includes a movable table 3 for horizontally holding a substrate 2 ′ conveyed from a temporary crimping unit (not shown), and a thermocompression bonding device for chips 4 on the substrate.
  • the movable table 3 which is composed of a base 5 and a glass backup 6 that supports the substrate 2 from below when the chip 4 is heated and pressed onto the substrate 2, holds the substrate 2 by suction.
  • the substrate holding stage 7 is configured to be movable in two horizontal axes (X, Y), up and down (Z), and around the Z axis ( ⁇ ).
  • the head 5 is composed of a ceramic holder 19, a ceramic heater 10, and a ceramic indenter 11 in order from the bottom of a main body 8 made of a metal tool.
  • the ceramic holder 9 is mounted on the tool body 8 with a port 12, and the ceramic heater 10 and the ceramic indenter 11 are sintered on the ceramic holder 9.
  • the ceramic indenter 11 is provided with, for example, a thermocouple, a resistance temperature detector, or the like as the temperature detecting means 13. That is, the heat received by the ceramic indenter 11 from the ceramic heater 10 is detected by the temperature detecting means 13, and the detection result is transmitted to the temperature control section 21.
  • the first flow path 15 is connected to an air supply flow path 16 for supplying air from the tool body 8.
  • air is supplied from the air supply means 18 to the other end of the air supply flow path 16 through a pressure-resistant hose 17 having a valve V which is connected and connected as shown in FIG. Is done.
  • the air supplied from the air supply means 18 is discharged from the openings 15a at both ends of the first flow path 15 through the air supply flow path 16 and the air flow path 15 in this order. . Therefore, the heat generated from the heat generating portion 10a of the ceramic heater 10 is taken away by the air circulation, and both the ceramic heater 10 and the ceramic indenter 11 can be rapidly cooled.
  • the ceramic heater 10 is formed in a T-shaped panel body having a predetermined thickness (for example, about 1 mm) in which a heating section 10a and a terminal section 10b are arranged. I have.
  • the ceramic heater 10 has a configuration in which the heating element 19 is covered with a ceramic material, which is an electrical insulator, and the terminals 20 of the heating element 19 protrude from the terminal portions 10b.
  • the ceramic material of the ceramic holder 19, the ceramic material of the ceramic heater 10, and the ceramic indenter 11 are made of a material obtained by adding a predetermined amount of glass or the like to silicon nitride.
  • the coefficient of linear expansion of the ceramic holder 9 is preferably equal to the coefficient of linear expansion of the ceramic heater 10 and the ceramic indenter 11. Further, their thermal conductivities become larger toward the pressing surface side (downward in FIG. 2) of the ceramic indenter 11 with the base point of the ceramic heater 10 as a base, and on the opposite side (upward in FIG. 2). It is preferable that the diameter of the ceramic halter 9 becomes smaller toward the mounting surface side.
  • the temperature control unit 21 receives input from a not-illustrated external input device setting conditions corresponding to each resin used, for example, a heating time, a glass transition point as a cooling temperature of the ceramic heater 10, and the like. Detected from these input conditions and temperature detection means The temperature of the ceramic heater 10 is controlled based on the detected result. For example, the temperature of the ceramic heater 10 is controlled in accordance with a temperature deviation obtained by comparing a glass transition point set in advance and an actually measured value sent from the temperature detecting means 13. Specifically, the valve V is opened and air is supplied, and when the temperature falls below Tg, the valve V is closed and the head is raised.
  • the substrate 2 to which the chip 4 has been temporarily press-bonded via the resin in the preliminary press-bonding step in the preceding stage is transferred to the main press-bonding apparatus 1 by a transfer mechanism (not shown).
  • the substrate 4 is transferred to the substrate holding stage 7 of the movable table 3 and held by suction.
  • the substrate holding stage 7 is moved forward between the head 5 and the glass backup 6 by the drive mechanism (not shown) in the forward direction (Y direction in FIG. 1).
  • the substrate 4 is positioned so that the substrate 4 can be sandwiched from above and below.
  • the head 5 When the alignment of the substrate 2 is completed, the head 5 is lowered by a driving mechanism (not shown), and the chip 4 is sandwiched between the head 5 and the glass backup 6 below the substrate 2.
  • the head 5 starts the thermocompression bonding of the chip 4 to the substrate 2.
  • the temperature of the ceramic heater 10 provided in the head 5 is set to 220 ° C. by the temperature control unit 21 at the start of the heat bonding of the chip 4 (t 0). Have been.
  • the temperature controller 21 controls the ceramic heater for a predetermined time from the start time (tO) to the end time of heating (tl).
  • the chip 4 is heated and pressed against the substrate 2 while maintaining the temperature of the heater 10 at 220 ° C.
  • the resin starts to heat and harden due to the heat transfer from the chip 4.
  • a heating OFF signal is sent from the main control unit M to the temperature control unit 21. Based on this signal, a command signal from the temperature control unit 21 is sent to the valve V, and the valve V is turned on. V is released.
  • the valve V is opened, the supply of air from the air supply means 18 is started. The air flows into the first flow path 15 through the pressure hose 17 and the air supply flow path 16. The flowed-in air flows toward the opening 15a at both ends of the first flow path 15 and is discharged. As a result, the ceramic heater 10 and the ceramic indenter disposed below the first flow path 15 are formed. Cool 1 1 rapidly.
  • the temperature of the head 5 is sequentially detected by the temperature detecting means 13 provided on the ceramic indenter 11, and the measured value is sent to the temperature control section 21.
  • the temperature control unit 21 a comparison process between the glass transition point (T g) preset and input as the cooling temperature of the ceramic heater 10 and the actually measured value is sequentially executed.
  • the detection result does not reach the glass transition point (T g)
  • the cooling is continued while repeating the process of comparing this T g with the actually measured value.
  • the process proceeds to step S5.
  • the chip 4 heated by the head 5 is also cooled, and thus the resin that fixes the chip 4 to the substrate 2 is also cooled.
  • the resin temperature is cooled to the glass transition point (T g) with this cooling, so that the resin is almost completely cured.
  • the cooling temperature of the ceramic heater 10 is set to the glass transition point (T g) of the resin.
  • the cooling temperature is set to the glass transition point (T g) corresponding to the type of the resin used.
  • Plus 2 Ot It can be set within the following range. You.
  • the pressure applied to the chip 4 is released, and the head 5 is returned to the upper standby position.
  • the valve V is closed by a command signal from the temperature control unit 21 and the temperature of the ceramic heater 10 is reduced to 220 ° C (FIG. 6) in order to fix the next chip 4 to the substrate 2.
  • the temperature is controlled so that it rises to the point in time t 3) shown in.
  • the pressure from above the chip 4 is released in a state where the resin is cooled to Tg and is almost completely cured, so that the air in the resin is prevented from expanding.
  • the expansion of air can be suppressed by curing the resin, and the occurrence of voids around the bumps can be prevented.
  • the elastic recovery of the conductive particles interposed between the bump and the substrate electrode can be suppressed by resin curing in a state where the contact area is expanded by the elastic deformation due to the pressurization of the head 5. it can.
  • the resin viscosity exceeds the elastic stress at the time of restoration of the elastic deformation of the conductive particles, and the elastic deformation state of the conductive particles can be maintained. As a result, the gap generated between the bump and the conductive particles can be eliminated.
  • the substrate holding stage 7 moves to the substrate transfer position.
  • the substrate 2 moved to the transfer position is transferred to a substrate storage unit by a substrate transfer mechanism (not shown) and stored in a substrate collection magazine.
  • a substrate transfer mechanism not shown
  • the ceramic heater 10 is used to rapidly cool down to the glass transition point (T g) of each resin by air.
  • T g glass transition point
  • the chip when ACF or ACP was used, the chip was lifted upward due to restoration of elastic deformation of the conductive particles, and a space was created between the bumps and the conductive particles.
  • the pressure from above the chip is released while the resin is cured, so that the resin viscosity exceeds the elastic stress acting by restoring the elastic deformation of the conductive particles, and the connection between the bump and the substrate electrode is made. Defects can be prevented.
  • the final bonding apparatus that heat-compresses the chip 4 to the substrate 2 and fixes it almost completely has been described.
  • the chip 4 is mounted on the substrate 2 to temporarily compress the chip 4.
  • a description will be given of a bonding apparatus capable of final press bonding. Since only the structure of the bonding device around the head is different from that of the device of the first embodiment, the same portions are denoted by the same reference numerals, and different portions will be described.
  • FIG. 7 is a perspective view showing a schematic configuration of a bonding apparatus according to the present invention
  • FIG. 8 is a front view showing a configuration of a main part around a head.
  • the bonding apparatus 100 sucks and holds the chip 4 to position and mount the chip 4 at a predetermined position on the substrate where the resin G is applied, and also heat-presses the chip 4 to the substrate 2.
  • a heat and pressure bonding mechanism 101, a movable table 3 for horizontally holding the substrate 2, a glass backup 6 for supporting the substrate 2 from below when the chip 4 is pressed onto the resin portion on the substrate 2, and a glass backup 6 Addition Heating heater 102, nozzles 103, 104 supplying air from above and below toward the substrate 2, and a control unit 106 for controlling these components as a whole It is composed of
  • the heat and pressure bonding mechanism 101 has a head 107 that holds the chip 4 by suction, as shown in Fig. 7, so that it can be moved vertically (X) and horizontally (Z). It is configured. Further, a ceramic heater (not shown) is provided inside the head, and cooling means for cooling the heater is also provided. Since the configuration of this head is substantially the same as that of the first embodiment, detailed description is omitted. Further, the configuration of the head 107 is not limited to this mode, and for example, may be a configuration in which no cooling means is provided in the head.
  • the movable table 3 is provided with a substrate holding stage 7 for holding the substrate 2 by suction.
  • the substrate holding stage 7 moves in two horizontal (X, Y) directions, a vertical (Z) direction, and a direction around the Z axis ( ⁇ ). However, each is configured to be movable.
  • the heater 102 heats the glass backup 6 and transfers the heat to the substrate 2 and the resin G on the substrate for heating. As shown in FIG. 8, the heater 102 is attached to the side wall of the glass backup 6 at a predetermined distance from the substrate 2, and receives a control signal from the control unit 106. Temperature control.
  • the nozzle 103 disposed below the substrate is used to suppress heat transfer in a region near the portion where the glass backup 6 contacts the substrate 2 when the glass backup 6 is heated.
  • the air is supplied to it.
  • the nozzle 104 provided above the substrate is for cooling the chip 4 after the heat and pressure bonding, and supplies air toward the chip mounting portion.
  • both nozzles 103 and 104 are fired in response to a control signal from the controller 106.
  • Air is supplied from the air supply source 109 by opening and closing the lube V.
  • the control unit 106 controls the grounding speed when the mounting and heating / compression bonding mechanism 101 mounts the chip 4 on the board 2, the temperature control of the heater 102 that heats the glass backup 6, and the board 2 and Adjustment of air supply from the nozzles 103 and 104 for cooling the chip 4 is generally performed. Specific control of each unit will be described later.
  • the chip is mounted on the substrate while adjusting the resin temperature before mounting the chip on the substrate.
  • a method of fixing the chip to the substrate through a temporary pressure bonding step, a main pressure bonding step, and a cooling step will be described.
  • the specific method will be described with reference to the flowchart of FIG. 9 and the temperature profile of FIG.
  • the temperature profile shown in FIG. 10 is shown after the chip is mounted for convenience of explanation.
  • the substrate 2 is transported to the bonding apparatus 100 by a transport mechanism (not shown).
  • the substrate 2 is transferred to the substrate holding stage 7 of the movable table 3 and held by suction.
  • the substrate holding stage 7 is moved forward (in the Y direction in FIG. 7) between the head 107 and the glass backup 6 by a driving mechanism (not shown), and is moved between the head 107 and the glass backup 6.
  • the substrate 2 is aligned so that the chip 4 can be sandwiched from above and below.
  • Step S 1 Resin heating
  • the heater 102 is operated to heat the glass backup 6, and the heat is transmitted to the resin G on the substrate to soften the resin G.
  • the resin temperature is set in the range of 60 to 120 ° C. Preferably, it is 80 to 100. If the resin temperature is lower than 60, resin G does not soften sufficiently, so when chip 4 is mounted, the area between chip 4 and resin G Air entrapped on the surface becomes difficult to escape. As a result, air remaining on the interface becomes a poid. When the resin temperature exceeds 120 ° C., the resin G is cured.
  • a chip 4 at a predetermined location is suction-held by a head 107 and positioned and mounted on a softened resin portion on the substrate.
  • the contact speed is set to 1 OmmZs or less. The preferred range is 1-5 mmZs. If the contact speed exceeds 10 mmZ s, there is no space for air to escape when the chip 4 is pressed against the resin part.
  • the head is heated for a predetermined time at a set temperature at which gas (hereinafter simply referred to as “outgas”) is not generated from resin G when heated according to resin G used.
  • gas hereinafter simply referred to as “outgas”
  • the resin G is heated and cured so as to have a predetermined viscosity or more.
  • predetermined viscosity refers to a viscosity capable of suppressing the generated stress of the art gas generated when the resin G is heated at a high temperature in the next second heating process.
  • the resin temperature is lower than 190 ° C. during the first heating step from t0 to t1, as shown in FIG. (The temperature in the head is adjusted so as to be 170 ° C in Fig. 10). This set temperature is preferably from 120 to 170 ° C.
  • the set temperature When the set temperature is lower than 120, the curing speed of the resin G is reduced, and a sufficient resin viscosity cannot be obtained. On the other hand, if the set temperature exceeds 190 ° C, an auto gas is generated. In other words, the stress generated by the outgas exceeds the viscosity of the resin in an uncured state, and a void or the like is generated at the interface between the chip 4 and the substrate 2.
  • the heating time from t0 to t1 shown in Fig. 10 is set within 20 seconds. Is done. Preferably, it is 1 to 5 seconds. Normally, in the case of AC F, it is necessary to cure in 20 seconds at a set temperature of 180 to 190 ° C, but it can be cured without voids in a shorter time.
  • the set temperature and heating time are appropriately changed according to the curing conditions of the resin used.
  • the resin is heated and cured at a temperature higher than the heating temperature in the previous first heating step for tl to t2 shown in Fig. 10 continuously. I do.
  • the temperature inside the head is adjusted so that the resin temperature becomes 190 ° C or more.
  • This set temperature is preferably in the range of 200 to 220 ° C. This is because if the second heating temperature is lower than 190 ° C., the acceleration of curing of the resin is impaired.
  • the resin viscosity is increased in advance in the previous first heating step, so even if the temperature rises to more than 190 ° C and the resin generates outgas, the resin viscosity will generate outgas.
  • the stress can be suppressed, and as a result, the occurrence of clarity and the like can be prevented.
  • the set temperature exceeds 220 ° C and further exceeds 240 ° C, there is a problem with the heat resistance of the resin.
  • the set time of the second heating step of heating the resin G is set to, for example, 2 seconds.
  • the time from the start of the first heating step (t0) to the end of the second heating step (t2) can be set within 20 seconds. Also in this case, the resin G can be cured without generating a void.
  • this second pressurizing step corresponds to the main press-bonding step.
  • cooling is started from time t2 in FIG. 10 so that the resin temperature becomes the glass transition point (time t3). Specifically, cooling is performed in the following procedure. .
  • a valve (not shown) is opened from the control unit 106 based on the heating OFF signal, and the supply of air into the head is started. With this air supply, the ceramic heater and ceramic indenter in the head are rapidly cooled. At this time, the resin G receives a cooling effect by cooling in the open-to-atmosphere state and heat transfer by actively cooling the head 107.
  • the control unit 106 opens the valve V to supply air from the nozzle 104 above the substrate to the chip 4.
  • adjust the temperature according to the temperature of 102 that is, the temperature of the chip 4 and the substrate 2 are adjusted so that the temperature of the resin G is near the glass transition point and the amounts of thermal expansion from the room temperature when the substrate 2 and the chip 4 are open to the air are substantially equal. Do. Therefore, it is possible to prevent warpage that tends to occur when the chip 4 and the substrate 2 contract due to cooling.
  • the method for setting the time and conditions for these temperature adjustments is to set the conditions while measuring the temperatures of the chip 4, the substrate 2, and the resin G by a preliminary test.
  • the thermal expansion of the substrate 2 in the present embodiment does not mean the thermal expansion of the entire substrate, but rather the thermal expansion of the substrate 2 in a predetermined area surrounding the portion where the chip 4 is mounted and the portion where the chip 4 is mounted. Refers to the amount. This area is arbitrarily set according to the size of the chip 4 or the like.
  • the substrate holding stage 7 moves to the substrate transfer position.
  • the substrate 2 moved to the transfer position is transported to the substrate storage unit by a substrate transport mechanism (not shown) and stored in the substrate collection magazine.
  • a substrate transport mechanism not shown
  • the present inventor examined the occurrence of voids when changing the grounding speed (head speed) when mounting a chip on a substrate using the device of the second embodiment and the resin softening temperature when mounting the chip. An experiment to confirm was performed. The results are described below.
  • High-transparency crown glass is used as the glass substrate, and ACF is used as the resin applied to the electrodes on this substrate.
  • ACF is used as the resin applied to the electrodes on this substrate.
  • an AC F with a particle diameter of 3.5 m and the number of particles per unit area of 100,000 particles / mm 3 was applied to a glass substrate to a thickness of 35 im. did.
  • the recommended joining conditions for ACF namely, the temperature at which the resin to be used does not generate heat gas by heating is lower than 190 ° C., and the temperature at which the resin is almost completely cured is 220 ° C.
  • the head speed when mounting the chip on the board is set to four patterns of 1, 3, 5, and 10 (mmZs), and the resin temperature when mounting the chip on the board at each grounding speed is 150, 1.
  • Experiments were performed at 70, 180, 200, and 220 (° C), respectively. The temperature of each resin was kept constant throughout the heating until the resin was cured. The results obtained from the experiment are shown in FIG.
  • the number of points under each condition is obtained as follows. Visual observation of the as generated around the bump and the area other than the bumps and the occurrence of cracks larger than the matter from the back side of the board, and the number of points was calculated according to the number. ing. More specifically, if a poid cannot be confirmed in each predetermined area, ⁇ 0 '' points will be assigned to each area, if several can be confirmed, ⁇ 1 '' points per area, if several tens of points can be confirmed, "2" points are awarded. In addition, the same point is assigned to the crack, and the points of the poid and the crack are added to obtain the same value.
  • the head speed is at a resin temperature of 170 ° C.
  • the number of points was “0”, confirming that good chip mounting without any voids could be realized. In other words, it means that all the air trapped in the interface between the chip and the resin during chip mounting has been exhausted.
  • the head speed in the range of 1 to 1 OmmZs under the recommended joining conditions of 190 or less, it is possible to reduce the occurrence of voids and the like due to entrainment of air.
  • the reason why the amount of generated voids and the like is high when the softening temperature of the resin is 150 O iG and 200 or more is as follows.
  • the resin softening temperature is 150 ° C, the resin itself is not sufficiently softened because it is too low than the recommended ACF bonding conditions, so air trapped at the interface between the chip and the resin will not be able to escape and be contained. This is because
  • the temperature exceeds the temperature at which no art gas is generated, which is the recommended bonding condition for ACF, and there are voids caused by the generation of art gas.
  • the resin G is previously heated and hardened for a predetermined time at a temperature at which outgas does not occur when heated according to the resin G to be used.
  • the resin viscosity at the time of the first heating step exceeds the stress generated by the outgas generated in the second heating step, so that outgassing occurs. The resulting voids and cracks can be prevented.
  • the present invention is not limited to the above embodiment, but may be modified as follows.
  • the chip in the pre-compression bonding step, was completely pre-compressed to a predetermined position on the substrate in the pre-compression bonding process.
  • the chip may be mounted on the substrate in a batch process including only the final pressure bonding.
  • a suction hole for sucking and holding the chip 4 is provided at the lower end of the head 5, and a recognition means is provided below the substrate 2, and a recognition means is provided below the substrate 2 mounted on the substrate holding stage 7. Then, the mark position of the chip 4 and the mark position of the chip 4 may be recognized to perform the alignment.
  • the head 5 was provided with the ceramic heater 10 to heat the resin only from above the chip 4.
  • the substrate holding stage 7 side, or the resin above the chip 4 and the substrate Heating means such as a ceramic heater may be provided on both sides of the holding stage.
  • the heating means on the substrate holding stage 7 side to Tg, the temperature of the chip 4 and the substrate 2 when the resin is almost completely cured can be made the same. Therefore, the resin is heated by heating only from the conventional head 5 side. The distortion due to the warpage of the substrate 2 that tends to occur due to the difference in the linear expansion coefficient between the chip 4 side and the substrate 2 side during thermosetting can be eliminated.
  • the heating means is not limited to ceramic heaters, but may be any means capable of heating and curing the resin.
  • the first flow path 15 is provided along the upper surface of the ceramic heater 10 as the cooling means.
  • the first embodiment may be modified as follows.
  • FIG. 11 which is a perspective view of the head 5 and FIG. 12 which is a side view thereof, a through hole 22 is formed in a side wall of the ceramic holder 9 so as to penetrate horizontally. Air may be blown into the inside from outside by air blowing means or the like to distribute the air.
  • the through-hole 22 may be combined with the configuration of the head 5 of the above-described embodiment for supplying air into the head 5 as shown in FIG.
  • the cooling of the head 5 may be performed.
  • FIG. 13 which is a front view of the head 5
  • a tapered heat-radiating cooling member 23 (fin) extending horizontally from the base end of the side wall of the ceramic holder 9 and the tool body 8 is provided in multiple stages. May be attached. As described above, by attaching the plurality of fins 23, the heat radiation effect of the head 5 can be improved, and thus the head 5 can be cooled.
  • the fins 23 are preferably made of a member having a high heat radiation effect, and are preferably made of metal, for example.
  • the fins 23 may be combined with the structure of the head 5 of the first embodiment for supplying air to the inside of the head 5, or the head 5 using only the fins 23 may be used. May be cooled.
  • the ceramic heater 10 may be cooled by using cooling water. Specifically, as shown in the side view of FIG. 14, a cooling water supplied from the cooling water supply means 24 is circulated along the upper side of the ceramic heater 10 so as to circulate the cooling water. Two flow paths 25 may be provided.
  • air or cooling water is used to cool the head 5, but other cooling media may be used.
  • liquid nitrogen may be supplied and circulated through the second flow path.
  • the temporary crimping process and the main crimping process were each performed using one bonding apparatus 100, but separate devices are provided for the temporary crimping process and the main crimping process. You may do so.
  • the present pressure bonding apparatus only has to heat-press the chip 4 temporarily pressed on the substrate in the temporary pressure bonding step, and thus does not need to have a function of sucking and holding the chip 4 on the head portion.
  • the heat of the heater 102 was transmitted to the resin G via the glass backup 6 as a means for softening the resin before mounting the chip.
  • a nozzle or the like was provided above the board.
  • hot air may be supplied to the resin to soften it.
  • the arm provided with a heater that can move above the substrate may be moved to the vicinity of the resin, and the resin may be softened in a non-contact state using the radiant heat of the heater.
  • the bonding method and the apparatus according to the present invention provide chip components such as semiconductor chips on substrates such as liquid crystal, EL (Electro Luminescence), and flat display panels such as plasma displays. Bonde Suitable for

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Abstract

L'invention concerne un procédé de collage et un dispositif de collage. Lors du montage de la puce sur le substrat par au moyen d'une résine, le mode de réalisation consiste à introduire de l'air dans un premier passage d'écoulement ménagé dans une tête après application par chauffage d'une puce sur un substrat par la tête; à refroidir un filament chauffant céramique placé sur le côté aval du premier passage d'écoulement jusqu'au point de transition vitreuse de la résine utilisée pour le montage de la puce; puis, à relâcher une pression appliquée à la puce par retour de la tête dans une position d'attente supérieure. La résine étant elle-même refroidie jusqu'au point de transition vitreuse en fonction du refroidissement de la tête, et cette résine étant généralement totalement durcie, on peut empêcher la formation de vides provoquée par l'expansion de l'air contenu dans la résine.
PCT/JP2003/005491 2002-04-30 2003-04-28 Procede de collage et dispositif de collage WO2003094222A1 (fr)

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JP2002-128468 2002-04-30
JP2002128468 2002-04-30
JP2002292580A JP4014481B2 (ja) 2002-04-30 2002-10-04 ボンディング方法およびその装置
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WO2003094222A1 true WO2003094222A1 (fr) 2003-11-13

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