WO2003093905A1 - Photodetecteur et systeme d'exposition - Google Patents

Photodetecteur et systeme d'exposition Download PDF

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Publication number
WO2003093905A1
WO2003093905A1 PCT/JP2003/005507 JP0305507W WO03093905A1 WO 2003093905 A1 WO2003093905 A1 WO 2003093905A1 JP 0305507 W JP0305507 W JP 0305507W WO 03093905 A1 WO03093905 A1 WO 03093905A1
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WO
WIPO (PCT)
Prior art keywords
light
detected
thin film
photodetector
self
Prior art date
Application number
PCT/JP2003/005507
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English (en)
Japanese (ja)
Inventor
Yutaka Hamamura
Kazutoshi Fukui
Original Assignee
Nikon Corporation
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Filing date
Publication date
Application filed by Nikon Corporation filed Critical Nikon Corporation
Priority to AU2003234769A priority Critical patent/AU2003234769A1/en
Publication of WO2003093905A1 publication Critical patent/WO2003093905A1/fr

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/429—Photometry, e.g. photographic exposure meter using electric radiation detectors applied to measurement of ultraviolet light

Definitions

  • the present invention relates to a photodetector for measuring short-wavelength light intensity and the like, and an exposure apparatus using the same.
  • the conventional coaxial light detection method uses a metal mesh, if the opening of the metal mesh is enlarged to secure the amount of transmitted high-energy light, the gain (photocurrent) decreases and the S Can't get / N.
  • An object of the present invention is to provide a photodetector capable of detecting light with high sensitivity without being affected by optical axis fluctuation and maintaining a uniform light amount distribution, and an exposure apparatus using the photodetector.
  • a light receiving section having a self-supporting conductive thin film
  • a photodetector comprising: a current detection unit that detects, as a current, photoelectrons emitted from the light receiving unit when the light to be detected passes through the light receiving unit.
  • a current detection unit that detects, as a current, photoelectrons emitted from the light receiving unit when the light to be detected passes through the light receiving unit.
  • self-supporting thin film refers to a self-supporting thin film having conductivity.
  • the photodetector of the present invention when the light to be detected passes through the light receiving portion, the light receiving portion, that is, the self-supporting conductive thin film emits photoelectrons, and the short-wavelength light, which is the light to be detected, is used as the light.
  • a self-supporting conductive thin film having a dimensionally uniform spread can be received as a whole. That is, the short-wavelength light to be detected can be efficiently detected by the self-supporting conductive thin film while being transmitted by the self-supporting conductive thin film.
  • the photodetector generated by the light receiving unit is detected as a current by the current detecting unit, the intensity of the light to be detected can be detected easily and with high accuracy.
  • the detected light is a self-conducting conductive material having a two-dimensional uniform spread. Since the thin film is used as a whole, fluctuations in the detected photocurrent can be reduced. Furthermore, even when the light receiving section is arranged close to the irradiation target to which the short-wavelength light is incident, shadows and uneven light densities such as those caused by a metal mesh are unlikely to occur. Uniform illumination becomes possible.
  • the light receiving unit further includes a support frame that supports the self-supporting conductive thin film around and insulates the self-supporting conductive thin film from the surroundings.
  • the self-supporting conductive thin film is stably held in a state of being electrically independent from the surroundings, and the current corresponding to the photoelectrons can be accurately detected.
  • the self-supporting conductive thin film is a metal film.
  • the light receiving section has an insulating layer formed on an upper surface.
  • An insulator membrane made of the insulating layer is formed by removing the Si substrate from the back surface in a predetermined area, and after forming a metal layer on the insulator membrane, the insulating membrane is removed in the predetermined area. It is desirable to be formed by this. Thereby, a self-supporting conductive thin film having a desired thickness, shape and size can be obtained by utilizing a so-called micromachine process. Further, a support frame made of a Si substrate material can be left around the self-supporting conductive thin film. Furthermore, simple insulation can be achieved by interposing an insulating layer between the self-supporting conductive thin film and the Si substrate material.
  • the metal film may be a multilayer metal thin film including two or more metals.
  • the metal constituting the multilayer metal thin film it is possible to detect photoelectrons at a desired efficiency while transmitting light of a specific wavelength at a desired transmittance among short wavelength lights incident on the light receiving unit.
  • the multilayer metal thin film may have a configuration of three or more layers including a three-layer structure of Ti / Zr / Ti.
  • the Zr film which is a relatively soft material, between the Ti films, it is possible to prevent wrinkles from being formed in the self-supporting conductive thin film and to increase the rigidity of the self-supporting conductive thin film. Further, it is possible to prevent the Zr film from being deteriorated or changed in characteristics due to oxidation or the like.
  • the multilayer metal thin film may have a configuration of three or more layers including a three-layer structure of T i / A 1 / T i. Similar to Zr, by sandwiching the film of A1, which is a comparatively soft material, with the Ti film, it is possible to prevent wrinkles from being formed in the self-supporting conductive thin film, and to increase the rigidity of the self-supporting conductive thin film. it can. Further, it is possible to prevent deterioration and characteristic changes due to oxidation of A1 and the like.
  • the predetermined region may include a plurality of partial regions, and a plurality of the light receiving units may be provided for each of the plurality of partial regions. That is, an array-type optical detector is provided.
  • An array-type photodetector can efficiently detect light to be detected having a wide cross-sectional area, that is, short-wavelength light. Further, for example, when the current detection unit is provided for each of the plurality of partial regions, the light intensity distribution and beam intensity of the beam cross section are determined from the relative current intensity ratio of each partial region. Room position and the like can be detected.
  • an exposure apparatus including the photodetector of the first aspect. It is. The photodetector provided in the exposure device can accurately monitor the intensity of the short-wavelength light used as the exposure light, for example. Can be further enhanced.
  • the light to be detected is high-energy light that is emitted by irradiating a medium with an excitation laser, and includes an airtight housing to which the medium is supplied. It is preferable that, when the high-energy light is transmitted through the light receiving unit, photoelectrons emitted from the light receiving unit are detected by the current detecting unit when the high energy light is transmitted through the light receiving unit.
  • the excitation medium or a substance generated from the medium is exposed to an exposure chamber (in a vacuum chamber) in which various optical systems are arranged.
  • the light receiving portion of the photodetector of the present invention has light transmissivity, the light receiving portion can form a part of the housing. In this case, part of the housing not only functions as a transmission window for high-energy light, but also functions as a photodetector.
  • an optical sensor for measuring the light intensity of the high-energy light, a current value detected by a current detecting unit of the photodetector, and a current value detected by the optical sensor
  • a control unit for controlling the light intensity of the high-energy light by obtaining a relationship with the light intensity, and changing at least one of the output of the excitation laser, the number of laser pulses, and the laser frequency based on the relationship. It is desirable to have. This makes it possible to adjust the exposure amount in real time so that the light reaching the object to be exposed is maintained at a predetermined light intensity.
  • a memory may be provided for storing a relationship between a current value detected by a current detection unit of the photodetector and a light intensity detected by the photosensor.
  • the exposure amount during actual exposure can be calculated from the current value detected by the current detection unit.
  • the high-energy light may be EUV light such as X-rays in order to obtain a fine line width pattern image.
  • FIG. 2 is a diagram showing a cross-sectional structure of the detector main body shown in FIG.
  • FIG. 3 (a) to 3 (f) are diagrams showing a manufacturing process of the detector main body shown in FIG. Fig. 4 (a) is a graph showing the relationship between the energy of the light to be detected incident on the self-supporting conductive thin film of Fig. 2 and the current detected by the ammeter, and Fig. 4 (b) is the graph of Fig. 4 (a). 5 is a graph showing the relationship between the energy of the light to be detected incident on the conductive thin film and the intensity of the light to be detected.
  • FIG. 5 is a diagram showing a cross-sectional structure of a detector main body of the photodetector in the second embodiment.
  • C FIG. 6 is a diagram showing a photodetector in the third embodiment.
  • FIG. 7 is a configuration diagram showing an example of an X-ray exposure apparatus incorporating the photodetector and the like shown in FIG. BEST MODE FOR CARRYING OUT THE INVENTION First Embodiment
  • FIG. 1 is a diagram illustrating a configuration of the photodetector 10 according to the first embodiment of the present invention.
  • the photodetector 10 is mainly composed of a detector main body 20 which is a light receiving section having a photodetector, and a current detector which detects a current generated when the detected light DL passes through the detector main body 20.
  • a certain ammeter 30 is provided.
  • the detector body 20 supports the self-supporting conductive thin film 21, which is a photodetector on which the light to be detected DL enters, and the self-supporting conductive thin film 21 around and insulates the self-supporting conductive thin film 21 from the surroundings (outside). And a support frame 23.
  • the conductive thin film 21 is a metal thin film having a uniform thickness, and uniformly transmits the detection light DL which is short-wavelength light such as ultraviolet light or X-ray.
  • the support frame 23 is a rectangular structure having a Si crystal as a main component, and almost blocks the detected light DL depending on the wavelength of the detected light DL.
  • the ammeter 30 has one end electrically connected to the self-supporting conductive thin film 21 via the wiring 31 and the other end grounded.
  • a minute current flows so as to supplement photoelectrons emitted by photoelectric conversion from the self-supporting conductive thin film 21 as the detection light DL enters the self-supporting conductive thin film 21.
  • by monitoring the output of the ammeter 30 It is possible to detect the S degree of the emitted light DL.
  • the detector main body 20 is fixed on a light path of the detected light DL in a vacuum container (not shown) in a state insulated from the surroundings. Further, the ammeter 30 is arranged outside the vacuum vessel, and is connected to the detector main body 20 in the vacuum vessel via the wiring 31.
  • FIG. 2 is a diagram showing a cross-sectional structure of the detector main body 20 shown in FIG.
  • the self-supporting conductive thin film 21 that forms the detector body 20 is composed of a metal film 41 having a two-layer structure in which Ti and Au are laminated, and has a thickness of about several 10 nm. .
  • the metal film 41 extends to the surrounding support frame 23, and passes through an insulating film 43 made of an S nitride film having a thickness of about 100 nm through a frame body 4 made of Si single crystal. Fixed to 5.
  • the insulating film 43 may be formed of a Si oxide film, boron nitride, or the like.
  • the frame body 45 has a thickness of about several hundred meters, and has a rectangular opening 23a having a side of about several cm.
  • the support frame 23 has a structure in which an insulating film 43 made of a Si nitride film and a metal film 41 made of Ti and Au are laminated on a frame body 45 made of a Si single crystal.
  • the self-supporting conductive thin film 21 is formed and arranged so as to cover the rectangular opening 23 a of the support frame 23.
  • the photodetector 10 is arranged on the optical axis of the detected light DL. At this time, the photodetector 10 is arranged so that the optical path of the detection light DL is not obstructed by the support frame 23, and the detection light DL is completely incident on the self-supporting conductive thin film 21.
  • the detected light DL which is short-wavelength light
  • enters the self-supporting conductive thin film 21 a part of the light energy of the short-wavelength light is used for photoelectron emission, and a photocurrent corresponding to the emitted charges is generated by the detector body 20. And between the earth.
  • the photoelectric flow rate With the ammeter 30, the amount of light attenuated by the self-supporting conductive thin film 21 and the amount of transmitted light can be measured.
  • the intensity of the light DL to be detected incident on the self-supporting conductive thin film 21 and the minute current detected by the ammeter 30 are usually in a proportional relationship.
  • a graph for determining the intensity of the detected light DL based on the detection value from 30; that is, a calibration curve can be obtained in advance.
  • the attenuation rate and transmittance of the detected light DL in the self-supporting conductive thin film 21 change depending on the wavelength of the detected light DL, when comparing the incident intensity of a plurality of short-wavelength lights having different wavelengths.
  • FIG. 3 is a diagram showing a method of manufacturing the detector main body 20 shown in FIG.
  • a SiN film 52 having a thickness of about 0.1 m serving as a support was formed on the front and back surfaces of a Si single crystal substrate 51 having a thickness of about 20 Oyum by LP-CVD or the like (FIG. 3).
  • the support is not limited to SiN, but a material such as SiNx ⁇ BN, which has sufficient mechanical strength and is capable of forming a film with a different thickness on the surface, may be used. Can be.
  • a resist is applied to the back side of the Si single crystal substrate 51, and the resist is applied using a photolithography process, leaving a portion (peripheral region) slightly outside a portion where a metal thin film to be described later is formed. Was removed.
  • a rectangular frame-shaped resist pattern layer 53 is formed (see FIG. 3B).
  • a rectangular region at the center of the SiN film 52 formed on the back side of the Si single crystal substrate 51 was removed by dry etching using a fluorine-based active species.
  • the resist pattern layer 53 was removed by assing (see FIG. 3 (c)).
  • the Si single crystal substrate 51 in the central rectangular region was removed from the back surface of the Si single crystal substrate 51 by wet etching using a K 0 H aqueous solution, dry etching using a fluorine-based active species, or the like.
  • a support composed of the SiN film 52, that is, a membrane was obtained (see FIG. 3 (d)).
  • a Ti film 54 of about 1.5 nm and an Au film 55 of about 16.5 nm are formed by evaporation, sputtering, or the like. They were sequentially deposited (see Fig. 3 (e)).
  • the Ti film 54 functions as an adhesive layer when the Au film 55 is formed on the SiN film 52.
  • the SiN film 52 in a predetermined region was removed from the back surface side of the S single crystal substrate 51 by dry etching using a fluorine-based active species using the Si single crystal substrate 51 as a mask.
  • the etching method used to remove the SiN film 52 includes RIE and RIBE, which have the conditions that the material used for the support (membrane) can be etched and the metal-based membrane layer does not damage much. , ICP-E, radical beam etching, etc. can be used.
  • the insulator membrane as the support is SiNx, it is desirable to use a gas composition mainly composed of an F-based gas such as CF 4 or CHF a SF 6 as an etching gas.
  • the Ti film 54 and the Au film 55 correspond to the metal film 41 of FIG.
  • the film 52 corresponds to the insulating film 43 in FIG. 2, and the S ′′ i single crystal substrate 51 corresponds to the frame body 45 in FIG. 2.
  • the metal film constituting the metal membrane composed of the Ti film 54 and the Au film 55 The periphery of 41 is supported by a frame body 45 made of S ′′ i single crystal 51. Thereby, an appropriate tensile stress is applied to the metal film 41, and the metal film 41 becomes flat.
  • a flat metal film is particularly effective for use as a self-supporting conductive thin film for a coaxial photodetector.Fig.
  • FIG. 4 (a) shows that light to be detected DL is incident on three self-supporting conductive thin films 21 having different thicknesses.
  • 7 is a graph showing a current detection result in the case.
  • the horizontal axis indicates the photon energy of the detection light DL incident on the self-supporting conductive thin film 21, and the vertical axis indicates the minute current detected by the ammeter 30.
  • SOR light having a current of 10 OmA was used as the detection light DL, and the photon energy of the detection light DL was gradually changed.
  • the thickness of the Ti film 54 is 1.5 nm for the self-supporting conductive thin film 21, and the total thickness is 18 nm, 31.6 nm and 40 nm by variously changing the thickness of the Au film 55.
  • Three types of self-supporting conductive thin films 21 having a thickness of nm were used. Further, these measurements were performed in a vacuum.
  • FIG. 4B is a graph showing a spectrum distribution of the light source light corresponding to the detected light DL.
  • the horizontal axis indicates the photon energy of the detected light DL, and the vertical axis indicates the intensity of the detected light DL.
  • the intensity distribution was measured using a silicon-based photodetector manufactured by IRD.
  • the intensity distribution of the light DL to be detected shows a distribution similar to the result of the photocurrent detected by the self-supporting conductive thin film 21 through which the light DL to be detected passes (see FIG. 4 (a)). You can see that there is.
  • the detected light DL having a photon energy of 15 eV to 25 eV can be detected with a photocurrent of 5 pA or more and good S / N. it can. That is, by using the self-supporting conductive thin film 21 as described above, the detection target light DL can be detected with a sufficient current amount and with high accuracy. It is understood from FIG. 4 that when the thickness of the self-supporting conductive thin film 21 exceeds 30 nm, the current detected by the ammeter 30 is saturated. Second embodiment
  • FIG. 5 is a diagram illustrating a photodetector according to the second embodiment.
  • the photodetector of this embodiment is a metal film (self-supporting conductive thin film)
  • the film was formed in the same manner as in the first embodiment except that the film was formed to have a three-layer structure. Note that the same parts as those of the photodetector in the first embodiment are denoted by the same reference numerals, and redundant description is omitted.
  • the metal film 141 has a T / T film having a Zr film 141c sandwiched between a pair of Ti films 141a and 141b. It has a three-layer structure of Zr / Ti. Each of these layers was formed by sequentially depositing by vapor deposition, sputtering, etc. in the same manner as in the first embodiment.
  • the film 141c of Zr which is a relatively soft material, between the films 141 & 141b, it is possible to prevent wrinkles from being formed in the self-supporting conductive thin film 21.
  • the rigidity of the self-supporting conductive thin film 21 can be increased.
  • the Zr film 141c is sealed by the Ti films 141a and 141b, it is possible to prevent the Zr film 141c from being deteriorated due to oxidation or the like.
  • the thickness of the Ti film 141a, 141b is about 0.5 nm to 10 nm, and the thickness of the Zr film 141c is about 10 nm to 300 nm. It was found experimentally that a positive detection result was obtained.
  • the metal film 141 of the detector body 120 has a three-layer structure of T "i / Zr / Ti, but by using A1 instead of Zr, T" i / A1ZT It is also possible to have a three-layer structure of i.
  • the thickness of the T i film is about 0.5 nm to 10 nm, It has been experimentally found that an appropriate detection result can be obtained by setting the thickness of the A1 film to about 10 nm to 300 nm.
  • FIG. 6 is a diagram illustrating a photodetector according to the present embodiment. Note that components common to the photodetector in the first embodiment are denoted by the same reference numerals, and redundant description is omitted.
  • the photodetector of this embodiment is different from the photodetector of the first embodiment in that a plurality of light receiving sections are provided in a detector main body 220 for entering and transmitting the detected light DL. That is, the detector main body 220 includes a plurality of self-supporting conductive thin films 21 arranged in a matrix on the optical path of the light DL to be detected.
  • Each self-supporting conductive thin film 21 is formed from a rectangular metal film 41 extending to the periphery thereof. It is formed so as to extend toward. An ammeter similar to the ammeter 30 shown in FIG. 1 is connected to each wiring 31.
  • the self-supporting conductive thin film 21, which has a limit in increasing its size alone due to the relationship with the film thickness, is formed two-dimensionally via the grid-like support portion 123 b.
  • the detected light DL having a cross-sectional area larger than the surface area of each self-supporting conductive thin film 21 can be efficiently detected.
  • the ammeter 30 is individually connected to the self-supporting conductive thin film 21 via the wiring 31, the relative current intensity ratio detected by each ammeter 30 indicates that the light in the beam cross section is different. It is also possible to detect the intensity distribution and to specify the incident position of the detected light DL.
  • the photodetector in the present embodiment can also be manufactured in the same manner as in the first embodiment.
  • a resist pattern layer 53 composed of nine rectangular openings arranged in a matrix is formed.
  • a metal film composed of, for example, a Ti film 54 or an Au film 55 is patterned into a desired shape, so that wiring on the support frame 123 is performed.
  • Form 31 (see Figure 6).
  • all the self-supporting conductive thin films 21 may be connected in parallel, and the light to be detected DL may be detected by a single ammeter 30. As a result, the detection light DL having a large beam diameter can be detected with high sensitivity.
  • FIG. 7 is a configuration diagram showing an example of an X-ray exposure apparatus incorporating the photodetector 10 shown in FIG.
  • the X-ray exposure apparatus 500 mainly includes a soft X-ray light source S, a condenser C, an illumination optical system IF ⁇ to IR 4 , a stage MST supporting a mask M, a projection imaging optical system. It is composed of a stage WST for supporting the PF ⁇ PR ⁇ wafer W, a vacuum chamber VC for accommodating an exposure apparatus, and the like.
  • the soft X-ray light source S includes a laser light source that generates laser light for plasma excitation, and a tube that supplies a gas such as xenon as a target material (soft X-ray generation medium) into the housing SC. And are attached.
  • a gas such as xenon as a target material (soft X-ray generation medium) into the housing SC. And are attached.
  • the target material at the condensed part becomes Generates soft X-rays after being turned into plasma.
  • the condenser C focuses the soft X-rays generated at the tip of the tube T.
  • the housing SC is airtight so that gas and plasma particles do not float in the vacuum chamber VC.
  • the detector main body 20 manufactured in the first embodiment is arranged between the condenser C and the collimator mirror CM.
  • the portion of the casing SC, particularly, the soft X-ray passing window is formed of the self-supporting conductive thin film 21 of the detector.
  • a current corresponding to the intensity of the soft X-ray flows, and the current is measured by the ammeter 30. Detected.
  • a discharge plasma light source instead of the laser plasma light source as described above, a discharge plasma light source, radiation light from a SOR light source, or the like can be used.
  • the detector main body 20 by arranging the detector main body 20 on the optical axis of the light source light, the intensity of the light source light can be accurately detected without greatly attenuating the light source light.
  • the detector main body 120 manufactured in the second embodiment may be arranged instead of the detector main body 20 manufactured in the first embodiment.
  • Illumination optics IR, ⁇ IR 4 is reflective optical integration of evening IR ,, IR 2, is constituted by the capacitor mirror one IR 3, IR 4.
  • a ⁇ reflection-type mask is used for the mask M, which is not a conventional transmission-type mask.
  • Projection imaging optical system PR ⁇ PR 4 is composed of a plurality of multilayer mirrors, First. Circuit Roh turn formed on the mask M, such projection imaging optical system PR, Regis Bok is transferred to the register Bok was imaged onto the wafer W coated with ⁇ PR 4. Although the X-rays are absorbed by the atmosphere and attenuated, the entire apparatus is covered by a vacuum chamber VC and the optical path of the X-rays is maintained at a predetermined degree of vacuum (for example, 1.3 x 1 CI- 3 Pa or less). This reduces the attenuation of X-rays.
  • an optical sensor 101 composed of a silicon die is embedded on the upper surface of the wafer stage WST.
  • the exposure apparatus 500 includes a control system 103 and a memory 105 (the control system 103 includes an ammeter 30, a laser light source, an optical sensor 101, and a memory).
  • the control system 103 includes an ammeter 30, a laser light source, an optical sensor 101, and a memory.
  • the wafer stage WST is moved so that X-rays for exposure enter the optical sensor 101. Then, while variously changing the exposure amount, the light intensity of the X-ray was measured by the optical sensor 101, and at the same time, the photocurrent of the ammeter 30 obtained from the photodetector 20 was measured.
  • the data is stored in the memory 105 via the control system 103 while associating the intensity and the value of the photocurrent.
  • the wafer stage WST is moved so that the wafer W on the wafer stage WS ⁇ is irradiated with the X-rays, and the measured value of the ammeter 30 and the above-mentioned light intensity stored in the memory 105 are read.
  • the exposure amount is determined from the relationship with the photocurrent, and the output of the laser light source L is controlled in real time by the control system 103 so that a predetermined exposure amount can be obtained. Thereby, the light intensity during exposure can be kept uniform.
  • the value of the light intensity detected by the optical sensor 101 and the value of the photocurrent from the ammeter 30 are periodically measured, and the correspondence between those values stored in the memory is corrected.
  • the exposure conditions By controlling the exposure conditions based on the updated latest values, it is possible to prevent the exposure amount from dropping due to a change in the state of the optical system arranged in the exposure apparatus (for example, a cloudy mirror). can do.
  • the exposure apparatus 500 of the present embodiment includes a photodetector 22 of the third embodiment on an optical path from the mask ⁇ to the projection imaging optical system PR. 0 is arranged so that it can be inserted and removed using a rotation mechanism 222.
  • the photodetector 220 is used for adjusting the intensity of the exposure light and the incident position (optical axis position) in the exposure apparatus.
  • the photodetector 222 is rotated and moved so as to be off the optical path by using the rotation mechanism 222 during normal exposure.
  • the location of the photodetector with such a rotation mechanism is not limited to the optical path from the mask ⁇ to the projection / imaging optical system P R, but may be any position on the optical path in the exposure apparatus.
  • the intensity and the incident position of the exposure light at that position are detected, and based on the detection result, the light source output of the exposure apparatus and the positions of various optical systems are adjusted.
  • the self-supporting conductive thin film As the material of the self-supporting conductive thin film, Au, Ti, Zr, A1, and the like are used in the above embodiment, but the self-supporting conductive thin film can be formed using Pt, Pd, and the like. As described above, by selecting the metal material forming the self-supporting conductive thin film, the work function at the time of photoelectric conversion can be appropriately adjusted. Thereby, the transmittance of the self-supporting conductive thin film, the efficiency of photoelectric conversion, and the like can be adjusted according to the application.
  • self-supporting conductive film 2 1 is not limited to metal as described above, Z n O, T i 0 2 such as oxides, may be formed of carbon or the like.
  • the self-supporting conductive thin film is configured to have a two-layer or three-layer structure.
  • a material used for the self-supporting conductive thin film a structure of one or four or more layers can be obtained. May be configured.
  • the short-wavelength light to be detected can be totally received by the self-supporting conductive thin film having a two-dimensional uniform spread. That is, the short-wavelength light, which is the light to be detected, can be efficiently detected while being transmitted through the light receiving unit.
  • the detected as the photoelectron current generated by the light receiving portion by the current detection unit also c can detect the intensity of the detected light easily with high accuracy, the detected light, i.e., the short-wavelength light Even when there is fluctuation in the optical axis, fluctuations in the detected photocurrent can be reduced.
  • the photodetector according to the present invention can be used as various sensors placed on an optical path for research on various physical properties.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Light Receiving Elements (AREA)
  • Measurement Of Radiation (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

L'invention concerne un photodétecteur à sensibilité élevée qui n'est pas concerné par la fluctuation d'un axe optique et qui est capable d'effectuer une photodétection avec une distribution de quantité de lumière uniforme retenue, et un système d'exposition semi-conducteur utilisant ce photodétecteur. Ledit photodétecteur (10) est placé sur l'axe optique de lumière à détecter (DL), la voie de lumière à détecter (DL) étant exempte d'un cadre de support (23) de manière à permettre à la lumière à détecter (DL) d'entrer dans un film mince auto-contenu (21) dans sa globalité. Lorsque la lumière à détecter (DL) comme une lumière de courte longueur d'onde entre dans le film mince (21), une partie de l'énergie optique de la lumière de courte longueur d'onde est utilisée pour libérer des photoélectrons de façon à permettre au photocourant équivalent aux charges libérées de se déplacer entre un corps de détecteur (20) et le sol. La quantité de lumière atténuée au niveau du film mince (21) et l'autre quantité de lumière de transmission peuvent être mesurées par mesure de ce photocourant avec une ampèremètre (30).
PCT/JP2003/005507 2002-04-30 2003-04-30 Photodetecteur et systeme d'exposition WO2003093905A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2003234769A AU2003234769A1 (en) 2002-04-30 2003-04-30 Photodetector and exposure system

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002-128259 2002-04-30
JP2002128259A JP2005345102A (ja) 2002-04-30 2002-04-30 光検出器および半導体露光装置

Publications (1)

Publication Number Publication Date
WO2003093905A1 true WO2003093905A1 (fr) 2003-11-13

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PCT/JP2003/005507 WO2003093905A1 (fr) 2002-04-30 2003-04-30 Photodetecteur et systeme d'exposition

Country Status (3)

Country Link
JP (1) JP2005345102A (fr)
AU (1) AU2003234769A1 (fr)
WO (1) WO2003093905A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7629594B2 (en) * 2006-10-10 2009-12-08 Asml Netherlands B.V. Lithographic apparatus, and device manufacturing method
DE102007047446A1 (de) 2007-10-04 2009-04-09 Carl Zeiss Smt Ag Optisches Element mit wenigstens einem elektrisch leitenden Bereich und Beleuchtungssystem mit einem solchen Element

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11174199A (ja) * 1997-12-15 1999-07-02 Kobe Steel Ltd ビームモニタ及びビームの測定方法
JP2001284243A (ja) * 2000-04-03 2001-10-12 Hitachi Ltd Ｘ線露光装置
EP1182511A1 (fr) * 2000-08-25 2002-02-27 Asm Lithography B.V. Appareil lithographique
JP2002168998A (ja) * 2000-12-04 2002-06-14 Nikon Corp 金属メンブレンの製造方法及び金属フィルター

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11174199A (ja) * 1997-12-15 1999-07-02 Kobe Steel Ltd ビームモニタ及びビームの測定方法
JP2001284243A (ja) * 2000-04-03 2001-10-12 Hitachi Ltd Ｘ線露光装置
EP1182511A1 (fr) * 2000-08-25 2002-02-27 Asm Lithography B.V. Appareil lithographique
JP2002168998A (ja) * 2000-12-04 2002-06-14 Nikon Corp 金属メンブレンの製造方法及び金属フィルター

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JP2005345102A (ja) 2005-12-15
AU2003234769A1 (en) 2003-11-17

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