WO2003088436A1 - Appareil de controle de longueur d'onde - Google Patents

Appareil de controle de longueur d'onde Download PDF

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Publication number
WO2003088436A1
WO2003088436A1 PCT/JP2002/003715 JP0203715W WO03088436A1 WO 2003088436 A1 WO2003088436 A1 WO 2003088436A1 JP 0203715 W JP0203715 W JP 0203715W WO 03088436 A1 WO03088436 A1 WO 03088436A1
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WIPO (PCT)
Prior art keywords
wavelength
optical axis
fabry
light
perot resonator
Prior art date
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PCT/JP2002/003715
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English (en)
Japanese (ja)
Inventor
Yohei Mikami
Masao Imaki
Yoshihito Hirano
Original Assignee
Mitsubishi Denki Kabushiki Kaisha
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Publication date
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Priority to PCT/JP2002/003715 priority Critical patent/WO2003088436A1/fr
Priority to PCT/JP2002/009173 priority patent/WO2003087898A1/fr
Publication of WO2003088436A1 publication Critical patent/WO2003088436A1/fr

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/28—Interference filters
    • G02B5/284—Interference filters of etalon type comprising a resonant cavity other than a thin solid film, e.g. gas, air, solid plates
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J9/00—Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength
    • G01J9/02—Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength by interferometric methods
    • G01J2009/0257—Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength by interferometric methods multiple, e.g. Fabry Perot interferometer
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/001—Optical devices or arrangements for the control of light using movable or deformable optical elements based on interference in an adjustable optical cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H01S5/0687—Stabilising the frequency of the laser

Definitions

  • the present invention relates to a wavelength monitoring device that monitors the wavelength of a laser beam used in a wavelength division multiplexing transmission (WDM) system or the like, and in particular, detects the laser beam that has passed through a Fabry-Perot resonator to reduce the oscillation wavelength of the laser beam. It relates to the wavelength monitoring device to be measured.
  • WDM wavelength division multiplexing transmission
  • FIG. 1 is a configuration diagram showing a conventional wavelength monitor device disclosed in Japanese Patent Application Laid-Open No. H03-160774.
  • a semiconductor laser 101 can control the wavelength of an emitted optical signal.
  • the light emitted from the semiconductor laser 101 is converted into parallel light by the optical lens 105, and the parallel light is further split into two directions by the beam splitter 106.
  • One of the branched lights is focused on a photodetector 108, for example, a photodiode via a lens 107.
  • the other light is incident on the Fabry-Bellows resonator.
  • the Fabry-Perot resonator 111 has reflection films 109 and 110 and is made of two kinds of optical materials.
  • the light transmitted through the Fabry-Perot resonator 111 is focused on the photodetector 113 via the lens 112.
  • FIG. 2 is a configuration diagram of the Fabry-Perot resonator 111 in FIG.
  • the temperature coefficient ⁇ of a Fabry-Perot resonator made of one type of optical material is expressed by equation (1).
  • ⁇ is the refractive index of the optical material
  • ⁇ is the linear expansion coefficient in the light ray direction.
  • the Fabry-Perot resonator length becomes Because the wavelength dependence of the light intensity emitted from the semiconductor laser 101 and transmitted through the Fabry-Perot resonator 111 does not change depending on the temperature, the wavelength is accurately monitored irrespective of the temperature of the resonator 111. Can be.
  • the Fabry-Perot resonator 111 is composed of two kinds of optical materials having different signs of the temperature coefficient ⁇ . In order to make the temperature coefficient of the entire Fabry-Perot resonator 111 zero, it is necessary to satisfy Expression (2).
  • n. 101 is the refractive index and physical length of the first optical material, respectively, and r x is the temperature coefficient of the first optical material according to the equation (1). Also n. 2, 1 02 the refractive index and physical length of the second optical material, respectively it, r 2 is Ru temperature coefficient der of the second optical material.
  • the present invention has been made in view of the above, and comprises a Fabry-Perot resonator whose resonator length does not change in response to a temperature change, using a uniaxial birefringent crystal of one material, thereby simplifying the configuration. It is an object of the present invention to obtain a wavelength monitor using a Fabry-Perot resonator that can realize mass production.
  • a wavelength monitor device for monitoring the wavelength of laser light output from a semiconductor laser
  • one axis of one material cut out so that an optical axis is inclined at a predetermined angle with respect to a plane perpendicular to the optical axis of the laser light.
  • a light reflecting film that reflects light on a surface on which the laser light enters and a surface on which the laser light exits, and outputs transmitted light having different transmission intensities according to the wavelength of the laser light.
  • the present invention it is possible to configure a Fabry-Perot resonator in which the resonator length does not change in response to a temperature change by using a uniaxial birefringent crystal of one material, so that the configuration is simplified, The reliability as a wavelength monitor is improved, and troublesome adjustment work is not required during production, and mass production can be realized.
  • the laser light output from the semiconductor laser is polarized in one direction
  • the uniaxial birefringent crystal constituting the Floupe Perot resonator is The optical axis is in a plane parallel to a plane formed by the optical axis and the polarization direction, and the optical axis is inclined at a predetermined angle with respect to the optical axis of the laser beam.
  • the wavelength of the laser beam is aligned with the extraordinary optical axis, and a wavelength monitor having a Fabry-Perot resonator having a temperature compensation function can be realized using a uniaxial birefringent crystal of one material. .
  • the following invention is the above invention, wherein the laser output from the semiconductor laser is The light is polarized in one direction, and the uniaxial birefringent crystal constituting the Fabry-Perot resonator has an optical axis in a plane perpendicular to a plane formed by the optical axis and the polarization direction of the laser light.
  • the optical axis is inclined at a predetermined angle with respect to the optical axis of the laser beam.
  • the present invention it is possible to realize a wavelength monitor having a Fabry-Perot resonator having a temperature compensation function by using a uniaxial birefringent crystal of one material in which the polarization of laser light is aligned with the ordinary optical axis.
  • the uniaxial birefringent crystal constituting the Fabry-Perot resonator is based on a refractive index of the uniaxial birefringent crystal, a linear expansion coefficient in an optical axis direction, and a thermo-optic coefficient. An angle of the axis with respect to the optical axis is set.
  • a uniaxial birefringent crystal in which the angle of the optical axis with respect to the optical axis is set based on the refractive index, the coefficient of linear expansion in the optical axis direction, and the thermo-optic coefficient is used.
  • a uniaxial birefringent crystal Using a uniaxial birefringent crystal, a highly reliable wavelength monitor with a Fabry-Perot resonator having a temperature compensation function can be realized.
  • the uniaxial birefringent crystal constituting the Fabry-Perot resonator has a line in the optical axis direction such as the refractive index of the uniaxial birefringent crystal.
  • the angle of the optical axis with respect to the optical axis is set so that the sum of the product of the expansion coefficient and the thermo-optic coefficient coincides with zero.
  • the optical axis when aligning the polarization of the laser light with the extraordinary optical axis, the optical axis is adjusted so that the sum of the product of the refractive index and the linear expansion coefficient in the optical axis direction and the thermo-optic coefficient becomes zero. Since a uniaxial birefringent crystal whose angle to the optical axis is set is used, it is possible to realize a wavelength monitor having a Fabry-Earth single resonator having a highly accurate temperature compensation function.
  • the uniaxial birefringent crystal constituting the Fabry-Perot resonator has a refractive index of the uniaxial birefringent crystal and a line extending in the optical axis direction.
  • the sum of the product of the expansion coefficient and the thermo-optic coefficient must be equal to zero.
  • the angle of the optical axis with respect to the optical axis is set.
  • the optical axis of the optical axis is adjusted so that the sum of the product of the refractive index and the linear expansion coefficient in the optical axis direction and the thermo-optic coefficient coincides with zero. Since a uniaxial birefringent crystal having an angle with respect to is used, it is possible to realize a wavelength monitor having a fabricator having a high-precision temperature compensation function.
  • the uniaxial birefringent crystal constituting the Fabry-Perot resonator is formed of ⁇ - ⁇ , ⁇ -BO, and L i I 0 3 .
  • the angle of the optical axis with respect to the optical axis is 4.35 degrees
  • the angle of the optical axis with respect to the optical axis is 6 4.75 degrees
  • the present invention aligns the polarization of the laser beam to the extraordinary optical axis, and as a uniaxial birefringent crystal, ⁇ - BBO, j3 _BBO, when using any of L i I 0 3 Te odor, high A wavelength monitor having a Fabry-Perot resonator with an accurate temperature compensation function can be realized.
  • a uniaxial birefringent crystal constituting the Fuaburipero resonator, ⁇ - ⁇ , ⁇ - ⁇ BO , L i ⁇ 0 3, and C a C0 3 either, alpha-case of BBO, and angle 76.9 5 degrees with respect to the optical axis of the optical axis, J8- for BBO, angle 5 7 against the optical axis of the optical axis .
  • the present invention aligns the polarization of the laser beam on the ordinary axis and as uniaxial birefringent crystal, alpha - used ⁇ , / 3- BBO, one of L i I 0 3, C a CO 3
  • a wavelength monitor having a Fabry-Perot resonator having a high-precision temperature compensation function can be realized.
  • the following invention is the above-mentioned invention, wherein one component constituting the Fabry-Perot resonator is Axial birefringent crystals can satisfy the temperature compensation condition and adjust the wavelength discrimination region by changing the thickness in the direction of the optical axis while maintaining the set angle of the optical axis with respect to the optical axis.
  • the temperature compensation condition does not depend on the thickness of the uniaxial birefringent crystal, it is possible to obtain a Fabry-Perot resonator having an arbitrary wavelength discrimination region satisfying the temperature adjustment condition.
  • the next invention is characterized in that in the above invention, there is provided a lens for adjusting a beam size of a laser beam emitted from the semiconductor laser, and outputting the adjusted optical signal to the Fry-Bri-Perot resonator. I do.
  • the present invention it is possible to adjust the beam size of the laser beam and make it incident on the Fabry-Perot resonator.
  • the wavelength detecting means directly detects a laser beam output from the semiconductor laser, and a first photodetector for detecting light transmitted through the Fabry-Perot resonator. It is characterized by comprising a second photodetector, and a wavelength detection unit that detects the oscillation wavelength of the laser light using the ratio of the detection signals of the first and second photodetectors.
  • the oscillation wavelength of the laser light is detected using the ratio of the detection signals of the first and second photodetectors, it is affected by the change in the output intensity of the semiconductor laser. It is possible to accurately detect the oscillation wavelength without the need.
  • the semiconductor laser and the Fabry-Perot resonator are mounted, and the first and the second light detectors are positioned so that the second photodetector is located above the first photodetector.
  • the laser light transmitted through the Fabry-Bale-One resonator is not received by the second photodetector, and the oscillation wavelength can be accurately detected.
  • the next invention is the above invention, wherein the semiconductor laser and the Fabry-Perot resonator are mounted, and the first photodetector is positioned above the first photodetector. And a base carrier on which a second photodetector is installed, wherein the laser light transmitted through the Fabry-Body resonator mounted on the base carrier is not received by the second photodetector.
  • the second photodetector is characterized in that it is disposed closer to the one side of the fabric port than the first photodetector.
  • the laser light transmitted through the Fabry-Perot resonator is not received by the second photodetector, and the oscillation wavelength can be accurately detected.
  • the next invention is directed to a wavelength monitoring device that monitors the wavelength of laser light output from a semiconductor laser, and is cut out so that the optical axis is inclined at a predetermined angle with respect to a plane perpendicular to the optical axis of the laser light. And a light reflecting film that reflects light on a surface on which the laser light is incident and a surface on which the laser light is emitted, and transmits transmitted light having a different transmission intensity according to the wavelength of the laser light.
  • a uniaxial birefringent crystal has a light reflection film that reflects light on a surface on which the laser light is incident and on a surface on which the laser light is emitted, and outputs transmitted light having different transmission intensity according to the wavelength of the laser light Second broadband And Perot resonator, characterized in that a wavelength detection means for measuring the oscillation wavelength of the first Oyopi laser beam based on transparently light of the second Fuaburipero resonator.
  • a Fabry-Perot resonator whose resonator length does not change in response to a temperature change can be configured by using a uniaxial birefringent crystal of one material, so that the configuration is simplified and a wavelength monitor is provided.
  • the laser wavelength is monitored using two fiber resonators for the narrow band and the wide band, so that the oscillation wavelength can be extremely accurately determined. Inspection Can be issued.
  • the laser beam output from the semiconductor laser is polarized in one direction, and the uniaxial laser constituting the first and second Fabry-Perot resonators is provided.
  • the refractive crystal has an optical axis in a plane parallel to a plane formed by the optical axis of the laser light and the polarization direction, and the optical axis is inclined at a predetermined angle with respect to the optical axis of the laser light. It is characterized by.
  • the polarization of the laser light is aligned with the extraordinary optical axis, and a wavelength having two Fabry-Perot resonators having a temperature compensation function using a uniaxial birefringent crystal is provided. Monies can be realized.
  • the laser light output from the semiconductor laser is polarized in one direction
  • the uniaxial birefringent crystal forming the Fabry-Perot resonator is
  • the optical axis is in a plane perpendicular to a plane formed by the optical axis and the polarization direction, and the optical axis is inclined at a predetermined angle with respect to the optical axis of the laser beam.
  • the present invention it is possible to realize a wavelength monitor having two Fabry-Perot resonators having a temperature compensating function by using a uniaxial biaxially-folded crystal of one material in which the polarization of laser light is aligned with the ordinary optical axis. it can.
  • the following invention is the invention according to the above invention, wherein the wavelength discrimination region of the second Fabry-Perot resonator for a wide band is larger than the wavelength variable region of the semiconductor laser, and the wavelength of the first Fabry-Perot resonator for a narrow band is The thickness in the optical axis direction of the uniaxial birefringent crystal constituting the first and second Fabry-Perot resonators so that the discrimination area is sufficiently smaller than the wavelength variable area of the first Fabry-Perot resonator. Is set.
  • two Fabry-Perot resonators for a narrow band and for a wide band are configured, so that a narrow band for a narrow band is easily provided.
  • Two Fabry-Perot resonators can be realized.
  • the wavelength detecting means is a first fiber.
  • a wavelength detector for detecting an oscillation wavelength of light is a first fiber.
  • the oscillation wavelength of the laser light is detected using the ratio of the detection signals of the first and second photodetectors and the ratio of the detection signals of the third and second photodetectors.
  • the oscillation wavelength can be extremely accurately detected without being affected by a change in the output intensity of the semiconductor laser.
  • the next invention is the above invention, in which the semiconductor laser and the Fabry-Perot resonator are mounted, and the second and third photodetectors are positioned above the first photodetector.
  • the second and third photodetectors are arranged closer to the Fabry-Perot resonator side than the first photodetector so as not to be performed.
  • the laser light transmitted through the Fabry-Bale-One resonator is not received by the second and third photodetectors, and the oscillation wavelength can be accurately detected.
  • FIG. 1 is a configuration diagram of a conventional wavelength monitoring device
  • FIG. 2 is a perspective view showing a conventional Fabry-Perot resonator
  • FIG. 3 is a configuration diagram of a wavelength monitoring device in the first embodiment.
  • FIG. 4 is a graph showing a change in transmittance with respect to wavelength of a Fabry-Perot resonator
  • FIG. 5 is a configuration diagram showing a Fabry-Perot resonator using a uniaxial birefringent crystal
  • FIG. 6 is a diagram showing a 3-BB
  • FIG. 7 is a graph showing the physical property values of the crystal
  • FIG. 1 is a configuration diagram of a conventional wavelength monitoring device
  • FIG. 2 is a perspective view showing a conventional Fabry-Perot resonator
  • FIG. 3 is a configuration diagram of a wavelength monitoring device in the first embodiment.
  • FIG. 4 is a graph showing a change in transmittance with respect to wavelength of a Fabry-
  • FIG. 7 is a graph showing the dependence of d ii / d T + an on the temperature T of the / 3-BBO crystal.
  • Figure 8 is a graph showing the dependence of the linear expansion coefficient a of the
  • Figure 9 shows the C3 of the extraordinary light refractive index ⁇ of the J3-BBO crystal.
  • Fig. 10 shows the dependence of the extraordinary refractive index of the crystal on the temperature dn / d ⁇ between the C-axis and the optical axis.
  • FIG. 13 is a configuration diagram illustrating a wavelength control device according to Embodiment 1
  • FIG. 13 is a configuration diagram illustrating a modification of the wavelength monitor device according to Embodiment 1
  • FIG. 14 is a wavelength diagram according to Embodiment 2 i.
  • FIG. 15 is a configuration diagram of a monitor device
  • FIG. 15 is a configuration diagram of a wavelength control device according to the second embodiment
  • FIG. 16 is a configuration diagram of a narrow-band Fabry-Perot resonator and a broadband filter.
  • Ripero is a graph showing the respective wavelength transmission characteristics one resonator
  • the first FIG. 7 is a block diagram showing a modification of the wavelength monitor device according to the second embodiment.
  • FIG. 3 is a configuration diagram showing a wavelength monitor (or a wavelength stabilized light source) according to Embodiment 1 of the present invention.
  • the semiconductor laser 1 emits laser light (hereinafter referred to as an optical signal) polarized in one direction.
  • Examples of the semiconductor laser 1 include a distributed feedback (DFB) laser having a diffraction grating in an active layer, a tunable laser diode whose wavelength can be changed by injection current or temperature, or an electroabsorption element and a laser diode. And a compound type (EA / LD) module in which the components are arranged in series. Further, the injection current or the temperature of the semiconductor laser 1 is changed by the control signal T1 input from the wavelength control device shown in FIG. 12, and the wavelength is controlled.
  • DFB distributed feedback
  • EA / LD compound type
  • An optical signal emitted from the semiconductor laser 1 is condensed by the lens 2 and output as parallel light.
  • This lens 2 adjusts the beam size of the optical signal
  • the incident light enters the resonator 3.
  • the axis connecting the center of the emission surface of the semiconductor laser 1 and the center of the lens 2 is the optical axis.
  • the traveling direction (optical axis direction) of an optical signal is defined as the Z-axis direction in space coordinates, and the upward direction in space is defined as the Y-axis direction.
  • the direction perpendicular to the axis and the Y axis (in Fig. 3, perpendicular to the plane of the paper and facing forward) is defined as the X axis. It is assumed that the optical signal emitted from the semiconductor laser 1 has a polarization component that vibrates in the X-axis direction.
  • the resonator 3 has reflecting films 7 and 8 for reflecting light on an incident surface on which an optical signal from the semiconductor laser 1 is incident and on an emitting surface on which the optical signal is emitted.
  • uniaxial birefringent crystal only e.g.,] 3 - BBO crystal, alpha -.
  • BBO crystal, L i I 0 3 crystal, C a C_ ⁇ 3 are formed by any force such as crystalline files Buripero resonator 3
  • the cut-out plane of the uniaxial birefringent crystal used as the material for the crystal is arranged so as to be parallel to the XY plane orthogonal to the optical axis, and the optical axis of the uniaxial birefringent crystal (hereinafter referred to as the C axis) is a laser. It is inclined at a predetermined angle with respect to the XY plane perpendicular to the optical axis of light.
  • the first photodiode (main photodetector) 4 receives the optical signal transmitted through the Fabry-Perot resonator 3, detects its intensity (photocurrent value), and outputs a light intensity monitor signal S1.
  • the second—photodiode (sub-photodetector) 5 is disposed above the first photodiode 4, and converts an optical signal emitted from the semiconductor laser 1 without passing through the cavity 3 and the resonator 3. It directly receives light, detects its intensity (photocurrent value), and outputs a light intensity monitor signal S2.
  • These semiconductor laser 1, lens 2, Fabry-Perot resonator 3, first photodiode 4, and second photodiode 5 are mounted on base carrier 6.
  • the height of the Fabry-Perot resonator 3 or the height of the second photodiode 5 is set so that the optical signal transmitted through the Fabry-Perot resonator 3 is not received by the second photodiode 5. Has been adjusted.
  • the transmission characteristics with respect to the wavelength of the optical signal transmitted through the Fabry-Perot resonator 3 are as follows: It is kept constant regardless of temperature changes. In other words, the Flipper Perot resonator 3 has a temperature compensation function. Next, the temperature compensation condition of the Fabry-Perot resonator 3 will be described.
  • an optical signal is vertically incident on the incident surface of a rectangular Fabry-Bore-One resonator 3.
  • the intensity reflectance is R
  • the dependence of the intensity of the optical signal transmitted through the Fabry-Perot resonator 3 on the wavelength with respect to the wavelength is given by: ) And Figure 4.
  • TR ( ⁇ ) is the transmittance.
  • the intensity of the optical signal transmitted through the Fabry-Perot resonator 3 changes periodically with respect to the frequency of the optical signal.
  • the frequency interval corresponding to one cycle is called a free spectral range (hereinafter, referred to as FSR, free spectral interval) with respect to the wavelength of the optical signal transmitted through the Fabry-Perot resonator 3.
  • FSR free spectral range
  • the FSR depends on the length of the resonator in the direction of the optical axis, the length in the case of FIG. 3, and the length L and the refractive index ⁇ of the uniaxial birefringent crystal 3 in the ⁇ -axis direction. 4)
  • c is the speed of light.
  • the temperature compensating condition for a Fabry-Perot single resonator is that the dependence of the intensity of the optical signal transmitted through the 2nL Fabry-Perot resonator 3 on the wavelength does not change with temperature. Therefore, to enable temperature compensation, it is necessary that the FSR expressed by equation (4) does not depend on temperature. In order for FSR to be constant with respect to temperature T, it is necessary in equation (4) that the resonator length n L has a constant value with respect to temperature T. Equation (5) expresses this relationship. W
  • a uniaxial birefringent crystal having one C-axis is used as the material of the Fabry-Perot resonator 3, and the positional relationship between the optical axis of the incident optical signal and the C-axis when the Fabry-Perot resonator 3 is used.
  • the linear expansion coefficient and the refractive index will be described.
  • the temperature compensation condition can be satisfied even when the polarization direction of the laser beam (in this case, the X direction) is aligned with the extraordinary or ordinary optical axis of the uniaxial birefringent crystal.
  • a case where the polarization direction of light is aligned with the extraordinary optical axis of a uniaxial birefringent crystal will be described.
  • the C axis of the uniaxial birefringent crystal which is the material of the Fabry-Perot resonator
  • the optical axis is parallel to the Z axis
  • the C axis is relative to the optical axis.
  • a certain angle ⁇ c is inclined.
  • the polarization of the optical signal incident on the Fabry-Perot resonator 3 is p-polarized with respect to the Fabry-Perot resonator 3 , and corresponds to the X direction in FIG.
  • the extraordinary ray has the same oscillating plane as the plane created by the C axis and the optical axis direction Therefore, in this case, the incident optical signal propagates as an extraordinary ray in the Fabry-Perot resonator 3.
  • the refractive index n for an extraordinary ray depends on the angle between the optical axis and the C axis, and ne and no depend on the temperature T. Therefore, they are expressed as n ( ⁇ c, T). become that way.
  • ne is the refractive index for the polarized light component in the direction parallel to the C axis (the extraordinary light refractive index), and no is the refractive index for the polarized light component in the direction perpendicular to the C axis (the ordinary light refractive index).
  • ⁇ ( ⁇ , ⁇ ) is the refractive index for an optical signal incident on a Fabry-Perot resonator made of a uniaxial birefringent crystal.
  • Equation (9) The linear expansion coefficient ⁇ of the axially birefringent crystal in the direction of the optical axis is expressed by equation (9). ac is the coefficient of linear expansion in the direction parallel to the C axis, and aa is the coefficient of linear expansion in the direction perpendicular to the C axis.
  • Fig. 6 shows the characteristics of] 3-BBO crystal. That is, the extraordinary refractive index ne of / 3—BBO is 1.531, the ordinary refractive index no is 1.6467, and the thermo-optic coefficient d no / dT in one 16. 8 X 10- 6 / K, the thermal-optic coefficient d ne / dT is _ 8. 8 X 10- 6 / a, coefficient of linear expansion ac is 33. 3X 10- 6 / K, the linear expansion The coefficient aa is 0 ⁇ 5 X 10 16 / K.
  • FIG. 7 shows the case where a uniaxial birefringent crystal composed of / 3-BBO is used as the Fabry-Perot resonator 3 and the polarization direction of the force laser beam is aligned with the extraordinary optical axis, and 3 ⁇ shown in equation (7).
  • 3 is a graph showing the relationship between ⁇ + ⁇ and the angle ⁇ c between the optical axis and the C axis.
  • Fig. 8 is a graph showing the dependence of the coefficient of linear expansion on the angle ⁇ c in one BBO crystal.
  • Fig. 9 is the graph showing the dependence of the refractive index n on the angle ⁇ c in a 0-BBO crystal.
  • FIG. 10 is a graph showing the dependence of dn / dT on the angle ⁇ c as stated by j3- BBO. That is, the relationship between the linear expansion coefficient ⁇ and the angle c in FIG. 8, the relationship between the refractive index ⁇ and the angle ⁇ c in FIG. 9, the relationship between dn / dT and the angle ⁇ c in FIG. Is used to obtain the relationship between 311/3 T + na and the angle ⁇ c shown in FIG.
  • the FSR is set to 10: 0 GHz (1.0 ⁇ 10 "Hz) corresponding to a wavelength fluctuation width of 0.8 nm of laser light.
  • the thickness L of the uniaxial birefringent crystal] 3-BBO in the Z-axis direction L 970 ⁇ m is obtained. It is a practical size.
  • an angle ⁇ ⁇ : that satisfies the equation (7) is obtained.
  • the refractive index n is calculated based on the following formula, and the length L of the uniaxial birefringent crystal 3 in the Z-axis direction is adjusted based on the equation (4) using the obtained angle ⁇ c and the refractive index n to obtain a desired value. Try to get FSR.
  • Equation (4) shows that a Fabry-Perot resonator with an arbitrary FSR that satisfies the temperature compensation condition can be made.
  • the optical signal emitted from the semiconductor laser 1 is focused on the lens 2.
  • the upper part of the collected optical signal is directly received by the second photodiode 5.
  • the second photodiode 5 detects and monitors the intensity of the received optical signal.
  • An output control circuit (not shown) controls the optical output of the semiconductor laser 1 to be constant based on the difference between the intensity monitor signal S2 and a preset optical signal intensity.
  • the intensity of the optical signal emitted from the Fabry-Perot resonator 3 has a wavelength discrimination characteristic as shown in Equation (3.), and the characteristic is kept constant irrespective of the temperature change of the crystal. Has temperature compensation function.
  • the first photodiode 4 detects the intensity of the optical signal passing through the Fabry-Perot resonator 3, and outputs an optical intensity monitor signal S1.
  • the second photodiode 5 directly detects the optical signal intensity emitted from the semiconductor laser 1 and outputs the optical intensity monitor signal S2, as described above.
  • These light intensity monitor signals S 1 and S 2 are sent to the wavelength controller 50 shown in FIG.
  • the wavelength controller 50 detects the wavelength of the optical signal, and controls the semiconductor laser 1 such that the detected wavelength matches a preset wavelength (for example, the reference wavelength 0 in FIG. 4).
  • FIG. 12 is a configuration diagram of the wavelength control device 50.
  • the wavelength controller 50 includes a wavelength detector 51 and a laser controller 52.
  • the wavelength detector 51 receives light intensity monitor signals from the first and second photodiodes. Signals S 1 and S 2 and a preset reference wavelength; L 0 are input.
  • the wavelength detector 51 obtains the oscillation wavelength of the optical signal emitted from the semiconductor laser 1 based on the light intensity monitor signals S1 and S2, and obtains the difference between the oscillation wavelength and the reference wavelength I0.
  • the difference between the reference wavelength; L 0 from the wavelength detector 51 and the oscillation wavelength emitted from the semiconductor laser 1 is input to the laser controller 52.
  • the laser control unit 52 obtains a control signal ⁇ 1 for controlling the temperature, injection current, and the like of the semiconductor laser 1 so that the oscillation wavelength coincides with the reference wavelength ⁇ 0 according to the difference. 1 is output to the semiconductor laser 1.
  • Fig. 4 The relationship between the transmittance and the wavelength of the Fabry-Perot resonator 3 is shown in Fig. 4.
  • L0 in Fig. 4 the case where the oscillation wavelength is adjusted to the reference wavelength; L0 in Fig. 4 will be described.
  • the value of the light intensity monitor signal S 1 detected by the first photodiode 4 becomes smaller as the wavelength of the optical signal shifts to the longer wavelength side. It can be seen that the shift to the short wavelength side increases, and the change in the light intensity monitor signal S1 accompanying the change in the wavelength is monitored, and the shift from the reference wavelength;
  • the light intensity monitor signal S2 that directly detects the optical signal emitted from the semiconductor laser 1 and the light intensity monitor signal S1 that detects the optical signal transmitted through the Fabry-Perot resonator 3 are the semiconductor laser It changes in proportion to the intensity of the optical signal emitted from 1.
  • the wavelength of the optical signal emitted from the semiconductor laser 1 includes the wavelength ⁇ 0. If it is within the range, the value of the signal intensity ratio S1 / S2 indicates the wavelength of the optical signal.
  • the half of the FSR is sufficiently larger than the wavelength tunable region of the semiconductor laser 1 and the wavelength tunable region is included in one slope including L0, The Brillouin resonator 3 can be used as an absolute wavelength monitor.
  • the signal intensity ratio S 1 / S 2 at the reference wavelength 0 is obtained in advance, and the signal intensity ratio S 1 / S 2 at the reference wavelength ⁇ 0 is stored in the wavelength detector 51.
  • the wavelength detector 51 In the wavelength detector 51, the stored reference wavelength; the signal intensity ratio S 1 / S 2 at I 0, and the light intensity monitor signals S 1, S S from the first and second photodiodes 4 and 5 The difference (deviation) between the oscillation wavelength and the reference wavelength; L 0 is calculated by calculating the difference between the signal intensity ratio S 1 / S 2 obtained based on Step 2. The calculated deviation signal is input to the laser control unit 52.
  • the laser controller 52 uses the deviation signal input from the wavelength detector 1 to output a control signal ⁇ 1 for changing the value of the temperature, the injection current, or the like to the semiconductor laser 1, thereby controlling the semiconductor laser 1. Control the wavelength.
  • the oscillation wavelength of the semiconductor laser 1 becomes longer.
  • the laser control unit 52 receives the deviation signal from the wavelength detection unit 51 and the oscillation wavelength is shifted to a longer wavelength side than the reference wavelength, the injection current into the semiconductor laser 1 is increased. If the oscillation wavelength is shifted to a shorter wavelength side than the reference wavelength, a control signal ⁇ 1 for increasing the injection current to the semiconductor laser 1 is sent to the semiconductor laser 1. -When controlling the wavelength by changing the temperature of the semiconductor laser 1, generally, the higher the temperature is, the longer the oscillation wavelength of the semiconductor laser 1 is.
  • the laser control section 52 receives the deviation signal from the wavelength detection section 51, if the oscillation wavelength is shifted to a longer wavelength side than the reference wavelength, the temperature of the semiconductor laser 1 is increased, and If the wavelength is shifted to a shorter wavelength side than the reference wavelength, a control signal # 1 for lowering the temperature of the semiconductor laser 1 is sent to the semiconductor laser 1.
  • the polarization direction of the laser light is ⁇ polarization.
  • s-polarized laser light that is, laser light having a polarization direction perpendicular to the plane formed by the C axis and the optical axis.
  • the temperature compensation of equation ( 7) The condition can be satisfied. That is, the above equation (7) is satisfied for both the ordinary optical axis and the extraordinary optical axis. In this way, when the polarization direction of the laser light is aligned with the ordinary optical axis, in other words, the C axis is set in a plane perpendicular to the plane formed by the optical axis and the polarization direction of the laser light.
  • the angle ⁇ c between the optical axis and the C axis is 57.05 degrees.
  • the refractive index n and dn / dt when the ordinary optical axis is used do not depend on the angle ⁇ c and always take a constant value. Then, in this case, only the coefficient of linear expansion in equation (7) changes with the angle ⁇ c.
  • the first embodiment constitute a Fabry base mouth one resonator 3 Lou Jikusei birefringent crystal (e.g. - BBO (B aB 2 0 4 )) , and the laser beam C axis In the plane formed by the optical axis and the direction of polarization of the optical axis, and in the plane perpendicular to the plane, the force is arranged so that the C axis has a constant inclination with respect to the optical axis.
  • Lou Jikusei birefringent crystal e.g. - BBO (B aB 2 0 4 )
  • the resonator 3 can have a temperature compensation function (a function in which the intensity of the signal light emitted from the resonator 3 does not depend on the temperature), and the light intensity monitor signal S depends only on the wavelength of the optical signal. 1 can be detected and monitored. Further, the wavelength of the optical signal emitted from the semiconductor laser 1 can be controlled to a desired reference wavelength ⁇ 0 based on the detected light intensity monitor signal S 1. Furthermore, since only a uniaxial birefringent crystal of one material is used, the configuration of the semiconductor laser device can be simplified, and since the configuration is simplified, the reliability as a wavelength monitor can be improved. Become.
  • the physical constants of ⁇ -BBO are: extraordinary refractive index ne is 1.53003, ordinary refractive index no is 1.6650, and thermo-optic coefficient d no / d T is -9.3 X 1 0 one 6 / K, a thermal optical coefficient d ne / dT is 1 6. 6 X 10- 6 / K , the linear expansion coefficient in 36. 0 X 10_ 6 / K, the linear expansion coefficient 4. 0X 10- 6 / K.
  • the temperature compensation conditional expression (7) can be satisfied even when a crystal of Li IO 3 is used as the material of the Fabry-Perot resonator 3 in FIG.
  • FIG. 11 is abnormal to the optical axis of the laser light when aligned in polarization is a graph showing the dependence on the angle [psi c of dn / dT + ⁇ showing the expression (7) of the L i 10 3 crystals.
  • the first 1 by the FIG lever, L i I 0 3 with crystal, when aligned polarization of the laser beam on the extraordinary optical axis, the angle that satisfies the temperature compensation condition dn / dT + a n 0 ⁇ c Can be determined to be 22.70 degrees.
  • the angle satisfying the temperature compensation condition dn / dT + an-O ⁇ c is 18.65 degrees.
  • a C a C 3 crystal can be used as the uniaxial birefringent crystal.
  • any other uniaxial birefringent crystal may be used as long as the material satisfies the temperature compensation conditional expression (7) for the Fabry-Perot resonator.
  • the wavelength monitoring device shown in FIG. 12 with the wavelength monitoring device shown in FIG. 3, it is possible to configure a wavelength stabilized light source.
  • the thirteenth excavation is a configuration diagram showing a wavelength monitor according to a modification of the first embodiment of the present invention.
  • the second photodiode 5 located above the Fabry-Perot resonator 3 is arranged ahead of the first photodiode 4 so as to reduce the distance from the lens 2. That is, in this case, the location where the second photodiode 5 of the base carrier 6 is installed is protruded toward the semiconductor laser 1, and the location where the first photodiode 4 of the base carrier 6 is installed is A step is formed between the base carrier 6 and the position where the second photodiode 5 is installed.
  • the second photodiode 5 is arranged ahead of the first photodiode 4, even if the optical signal is (4) Even if the light is scattered on the bottom surface of the base carrier 6 after being incident on the single-cavity 3, the scattered light is not received by the second photodiode 5 after passing through the Fabry-Perot resonator 3.
  • each photodiode monitors the wavelength and the intensity of the optical signal.
  • three photodiodes are arranged independently, and two Fabry-Perot resonators are vertically arranged in parallel, so that the three photodiodes arranged in three are arranged.
  • Two photodiodes are used to monitor the wavelength of an optical signal in a wide band or a narrow band, and one photodiode is used to monitor an optical intensity signal.
  • FIG. 14 is a configuration diagram showing a wavelength monitor device according to Embodiment 2 of the present invention.
  • the same components as those of the wavelength monitoring device of the first embodiment are denoted by the same reference numerals, and the description of those portions will be omitted.
  • the temperature and injection current of the semiconductor laser 1 are controlled by the control signal T1 sent from the wavelength control device 60 shown in FIG. 15 to control the wavelength.
  • the Fabry-Bellow resonator 21 is made of a uniaxial birefringent crystal (eg, -B-) cut out to have the temperature compensation function shown in the first embodiment. It has reflection films 23 and 24 on its entrance surface and exit surface.
  • the third photodiode 22 detects the intensity of the optical signal transmitted through the Fabry-Perot resonator 21, and is arranged between the first photodiode 4 and the second photodiode 5.
  • the optical signal emitted from the semiconductor laser ⁇ ⁇ is condensed by the lens 2 and converted into parallel light.
  • First Photo Diode 4 the intensity of the optical signal transmitted through the Fabry-Perot resonator (for narrow band) 3 is detected, and the intensity of the optical signal transmitted through the Fabry-Perot resonator (for wide band) 21 is detected in the third photodiode 22.
  • the light intensity monitor signal detected by the first photodiode 4 is S1
  • the light intensity monitor signal detected by the third photodiode 22 is S3
  • the light intensity monitor signal is detected by the second photodiode 5.
  • the light intensity monitor signal is S2.
  • the light intensity monitor signals S1, S2 and S3 are sent to the wavelength control device 60 shown in FIG.
  • the wavelength control device 60 detects the oscillation wavelength using these signals S1, S.2, and S3, and controls the control signal for controlling the wavelength of the optical signal emitted from the semiconductor laser 1 based on the detected wavelength. T 1 is formed, and this control signal ⁇ 1 is output to the semiconductor laser 1.
  • FIG. 16 shows the wavelength transmission characteristics of the narrow-band Fabry-roll resonator 3 and the wide-band Fabry-low resonator 21.
  • the FSR of the Fabry-Perot resonator 3 for the narrow band is very small compared to the FSR of the Fabry-Perot resonator 21 for the wide band so that Set the length.
  • half of the FSR of the Fabry-Perot resonator 21 for a wide band that is, the wavelength discrimination region is larger than the wavelength tunable range of the semiconductor laser 1, and the wavelength tunable range of the semiconductor laser 1 is one slope in the FSR of the Fabry-Perot resonator 21.
  • the Fabry-Perot resonator 3 for narrow band has an FSR of 20 THz, and the intensity reflectance of the reflective film is 30. /. It is assumed that the FSR of the broadband Fabry-Perot resonator 21 is 100 GHz and the intensity reflectance of the reflection film is 30%.
  • the wavelength control device 60 includes a wavelength detection unit 61 and a laser control unit 52.
  • the wavelength detector 61 receives light intensity monitor signals S 1, S 2, S 3 from the first to third photodiodes 4, 5, and 22 and a reference wavelength ⁇ 0.
  • the wavelength detecting unit 61 obtains the oscillation wavelength of the optical signal emitted from the semiconductor laser 1 based on the light intensity monitor signals S1, S2, and S3, and obtains the difference between this oscillation wavelength and the reference wavelength ⁇ 0.
  • Laser controller The difference between the reference wavelength ⁇ 0 from the wavelength detector 61 and the oscillation wavelength emitted from the semiconductor laser 1 is input to 52, and the laser controller 52 sets the oscillation wavelength as a reference according to the difference.
  • a control signal ⁇ 1 ⁇ for controlling the temperature, injection current, and the like of the semiconductor laser 1 is determined so as to match the wavelength; L 0, and the control signal ⁇ 1 is output to the semiconductor laser 1.
  • the wavelength detector 61 detects a deviation from the reference wavelength; L0 using the light intensity monitor signal S3 transmitted through the Fabry-Perot resonator 21 for a wide band. That is, as described above, the wavelength detection unit 61 is configured to calculate the signal intensity ratio S 1 / S 2 at the reference wavelength previously obtained using the wavelength transmission characteristics of the Fabry-Perot resonator 21 for a wide band. And the signal intensity ratio S 3 / S 2 obtained based on the light intensity monitor signals S 2, S 3 from the second and third photodiodes 5, 22 to obtain the oscillation wavelength and the reference Calculate the deviation (deviation) from the wavelength; L 0.
  • this deviation amount is larger than the slope width of the narrow-band Fabry-Bore-One resonator 3, this value is sent to the laser control unit 52 as it is.
  • the reference wavelength calculated using the light intensity monitor signals S3 and S2; if the deviation from I0 is smaller than the slope width of the narrow-band fiber-optic resonator 3, narrow band
  • the oscillation wavelength is detected with higher accuracy by calculating again the amount of deviation from the reference wavelength; I0 using the slope characteristic of the fiber optic resonator 3 for use.
  • a reference wavelength calculated in advance using the wavelength transmission characteristics of the Fabry-Perot resonator 3 for the narrow band; the signal intensity ratio S 1 / S 2 at L 0, and the first and second photodiodes 4 and 5
  • the difference (deviation) between the oscillation wavelength and the reference wavelength ⁇ 0 is calculated by calculating the difference between the signal intensity ratio S 3 / S 2 obtained based on the light intensity monitor signals S 1 and S 2 from.
  • the deviation amount (deviation signal) thus obtained is sent to the laser control unit 52.
  • Laser control unit 52 operates in the same manner as in the first embodiment. That is, the laser control unit 52 outputs a control signal ⁇ 1 for changing the value of the temperature or the injection current to the semiconductor laser 1 using the deviation signal input from the wavelength detection unit 61.
  • the wavelength of the semiconductor laser 1 is controlled. Since one slope in the FSR of the Fabry-Perot resonator 21 for a wide band is larger than the wavelength tunable region of the semiconductor laser 1, the absolute wavelength can be monitored over a wide band. However, as shown in FIG. 16, the wavelength transmission characteristic of the Fabry-Perot resonator 21 for a wide band is more variable than the wavelength transmission characteristic of the Fabry-Perot resonator 3 for a narrow band. Eich is small. That is, the light intensity monitor signal S3 has a smaller signal intensity change with respect to the wavelength change than the light intensity monitor signal S1.
  • the wavelength of the optical signal emitted from the semiconductor laser 1 can be fixed more accurately by using the optical signal intensity S1 transmitted through the Fabry-Perot resonator 3, which is a wavelength monitor for a narrow band.
  • the resonators of the resonators 3 and 21 are arranged such that the lower Fabry-Perot resonator 3 is used as a wavelength monitor for a wide band and the upper Fabry-Perot resonator 21 is used as a wavelength monitor for a narrow band.
  • the length may be adjusted.
  • the absolute wavelength of the optical signal emitted from the semiconductor laser 1 can be controlled with high accuracy over a wide band.
  • a wavelength stabilized light source can be configured by combining the wavelength monitor shown in FIG. 15 with the wavelength monitor shown in FIG.
  • FIG. 17 is a configuration diagram showing a wavelength monitor according to a modification of the second embodiment of the present invention.
  • the second and third photodiodes 5, 22 located above the Fabry-Perot resonator 3 are connected to the first photodiode so as to reduce the distance from the lens 2. It is arranged before diode 4.
  • the location where the second and third photodiodes 5 and 22 of the base carrier 6 are installed is configured to protrude toward the semiconductor laser 1, and the first photodiode of the base carrier 6 is formed.
  • a step is formed between the place where the diode 4 is installed and the place where the second and third photodiodes 5 and 22 of the base carrier 6 are installed. are doing.
  • This invention is suitable for use as a wavelength monitor device of a semiconductor laser as a light source used in wavelength division multiplexing (WDM) communication using an optical fiber and high-density wavelength division multiplexing (DWDM) communication.
  • WDM wavelength division multiplexing
  • DWDM high-density wavelength division multiplexing

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

L'invention concerne un appareil de contrôle de longueur d'onde, qui comprend un résonateur de Fabry-Perot (3) construit avec un cristal biréfringent uniaxe homogène découpé de telle sorte que son axe optique soit incliné selon un angle précis relativement à un plan perpendiculaire à l'axe lumineux d'un faisceau laser; et des détecteurs de longueur d'onde (4, 5, 51) servant à mesurer la longueur d'onde d'oscillation d'un faisceau laser en fonction d'une lumière d'émission du résonateur (3). On peut ainsi configurer un résonateur de Fabry-Perot (3) exempt de variation dépendante de la température dans la longueur du résonateur et qui, malgré une configuration simple, peut détecter avec grande précision une longueur d'onde d'oscillation.
PCT/JP2002/003715 2002-04-15 2002-04-15 Appareil de controle de longueur d'onde WO2003088436A1 (fr)

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EP1605284B1 (fr) 2003-03-19 2012-12-26 Mitsubishi Denki Kabushiki Kaisha Filtre de longueur d'ondes et dispositif de controle de longueur d'ondes
JP2007095936A (ja) * 2005-09-28 2007-04-12 Mitsubishi Electric Corp 炭酸ガスレーザ加工機及び炭酸ガスレーザ加工方法
JP7036666B2 (ja) 2018-05-23 2022-03-15 三菱重工業株式会社 レーザ装置及び加工装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63248191A (ja) * 1987-04-03 1988-10-14 Mitsubishi Electric Corp 半導体レ−ザアレイ装置
EP1109276A2 (fr) * 1999-12-16 2001-06-20 Lucent Technologies Inc. Procédé et dispositif de stabilisation en longueur d'onde d'un laser
JP2001244557A (ja) * 2000-02-29 2001-09-07 Mitsubishi Electric Corp 波長モニタ装置、およびその調整方法、並びに波長安定化光源

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03160774A (ja) * 1989-11-20 1991-07-10 Toshiba Corp 半導体レーザモジュール
JP3294986B2 (ja) * 1996-03-22 2002-06-24 富士通株式会社 温度依存性のない光素子
JP3385898B2 (ja) * 1997-03-24 2003-03-10 安藤電気株式会社 可変波長半導体レーザ光源
JPH11242115A (ja) * 1998-02-26 1999-09-07 Fujitsu Ltd 温度依存性のない光素子
JPH11251673A (ja) * 1998-02-27 1999-09-17 Nec Corp レーザ信号の波長制御回路
JP2001257419A (ja) * 2000-03-10 2001-09-21 Nec Corp 波長安定化レーザモジュール
US6486999B1 (en) * 2000-03-15 2002-11-26 Agere Systems Inc. Using crystalline materials to control the thermo-optic behavior of an optical path
ATE347743T1 (de) * 2000-04-25 2006-12-15 Avanex Corp Wellenlängenstabilisierungsvorrichtung und dessen arbeitswellenlängenjustierungsverfahren

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63248191A (ja) * 1987-04-03 1988-10-14 Mitsubishi Electric Corp 半導体レ−ザアレイ装置
EP1109276A2 (fr) * 1999-12-16 2001-06-20 Lucent Technologies Inc. Procédé et dispositif de stabilisation en longueur d'onde d'un laser
JP2001244557A (ja) * 2000-02-29 2001-09-07 Mitsubishi Electric Corp 波長モニタ装置、およびその調整方法、並びに波長安定化光源

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
BRAASCH J.C. ET AL.: "Frequency stabilisation of monomode semiconductor lasers to birefringent resonators", ELECTRONICS LETTERS, vol. 28, no. 9, April 1992 (1992-04-01), pages 849 - 851, XP000296674 *

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